CN109935642A - The solar battery and its manufacturing method of a kind of MWT in conjunction with TopCon - Google Patents
The solar battery and its manufacturing method of a kind of MWT in conjunction with TopCon Download PDFInfo
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- CN109935642A CN109935642A CN201910247239.1A CN201910247239A CN109935642A CN 109935642 A CN109935642 A CN 109935642A CN 201910247239 A CN201910247239 A CN 201910247239A CN 109935642 A CN109935642 A CN 109935642A
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- Prior art keywords
- mwt
- solar battery
- topcon
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- conjunction
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 35
- 239000010703 silicon Substances 0.000 claims abstract description 35
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052709 silver Inorganic materials 0.000 claims abstract description 15
- 239000004332 silver Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 6
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 6
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 6
- 238000000137 annealing Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
- 238000007639 printing Methods 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 claims description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 10
- 238000000034 method Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
The present invention discloses the solar battery and its manufacturing method of a kind of MWT in conjunction with TopCon, and solar battery includes the N-type substrate silicon wafer for being equipped with multiple cathode holes；The front of the N-type substrate silicon wafer is successively arranged P+ diffused emitter layer, Al2O3Passivating film, SiNxAntireflective coating, positive silver grating line layer and positive silver electrode point layer；The back side of the N-type substrate silicon wafer is successively arranged super thin oxide layer, P doping n-type silicon thin layer, back metal electrode layer and plug-hole ag paste electrode point layer.The present invention can effectively promote minority carrier life time, promote conversion efficiency of solar cell.
Description
Technical field
The present invention relates to a kind of metal piercing winding techniques (MWT) mutually to tie with tunnel oxide passivation contact structures (TopCon)
The novel solar battery and its manufacturing method of conjunction, the manufacture suitable for N-type list, the solar battery of more silicon wafers.
Background technique
P-type crystal silicon solar batteries occupy the absolute share in silion cell market at present.However p-type crystal silicon has minority carrier life time
Low, the disadvantages of photo attenuation is big, for promoting solar battery efficiency, there are limitations.
The PERC battery being mass produced currently on the market is that overleaf introducing aluminium oxide/silicon nitride medium layer progress is blunt
Change, using partial metallic contact, it is compound to be effectively reduced back surface electronics, promotes cell conversion efficiency.But since PERC battery will
The contact range at the back side is limited in opening area, and the high recombination rate of tapping still remains, and limits crystal silicon solar batteries
Improved efficiency.
Traditional H-type battery is compared compared with MWT battery, and the main gate line of front electrode increases the shading-area of cell piece,
Reduce transfer efficiency, while the consumption of silver paste, compared to larger, it is big that metal electrode-emitter interface lacks sub- recombination losses.
Summary of the invention
Goal of the invention: aiming at the problems existing in the prior art with deficiency, the present invention provides a kind of MWT in conjunction with TopCon
Solar battery and its manufacturing method, can effectively promote minority carrier life time, promote conversion efficiency of solar cell.
Technical solution: a kind of solar battery of MWT in conjunction with TopCon, the N-type substrate including being equipped with multiple cathode holes
Silicon wafer；The front of the N-type substrate silicon wafer is successively arranged P+ diffused emitter layer, Al2O3Passivating film, SiNxAntireflective coating, positive silver
Grid line layer and positive silver electrode point layer；The back side of the N-type substrate silicon wafer is successively arranged super thin oxide layer, P adulterates n-type silicon thin layer,
Back metal electrode layer and plug-hole ag paste electrode point layer.
It is equipped with silver paste in the cathode hole and is used for plug-hole, back side shape of the silver paste at the aperture of cathode hole in N-type substrate silicon wafer
At plug-hole ag paste electrode point.
The cathode hole is conical cathode hole.
The super thin oxide layer is ultra-thin tunnelling SiO2。
The super thin oxide layer with a thickness of 1.4 ± 0.1nm.
The N-type base silicon on piece is equipped with 36 cathode holes.
A kind of manufacturing method of the solar battery of MWT in conjunction with TopCon, includes the following steps:
Step 1, using N-type base silicon；
Step 2, laser boring is carried out in N-type base silicon, is made a call to 36 cathode holes, is done MWT technology；
Step 3, making herbs into wool；
Step 4, P+ emitter is formed in N-type base silicon front；
Step 5, it etches；
Step 6, oxidizing annealing does back side super thin oxide layer；Oxidizing annealing uses 600s, 900sccm oxygen annealing；
Step 7, phosphorus-doped amorphous silicon is deposited using the preparation of LPCVD equipment, after a n 2 annealing 1000s after doped amorphous silicon,
15000sccm flow, to improve minority carrier life time；
Step 8, positive depositing Al2O3And SiNxAntireflective coating；
Step 9, silk-screen printing: back electrode printing, plug-hole electrode print, the printing of back electric field, positive electrode printing.
Front and back sides metal is using vapor deposition Ti/Pd/Ag lamination.
It in the step 4, is spread using boron diffusion way boron, forms P+ diffused emitter.
The utility model has the advantages that compared with the existing technology, solar battery and its system of the MWT provided by the invention in conjunction with TopCon
Method is made, minority carrier life time can be effectively promoted, improves conversion efficiency of solar cell.And it, can be with due to manufacture craft simplicity
Reduce cost.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the embodiment of the present invention.
Specific embodiment
Combined with specific embodiments below, the present invention is furture elucidated, it should be understood that these embodiments are merely to illustrate the present invention
Rather than limit the scope of the invention, after the present invention has been read, those skilled in the art are to various equivalences of the invention
The modification of form falls within the application range as defined in the appended claims.
As shown in Figure 1, solar battery of the MWT in conjunction with TopCon, the N-type base including being equipped with 36 conical cathode holes
Bottom silicon wafer 1；The front of N-type substrate silicon wafer 1 is successively arranged P+ diffused emitter layer 2, Al2O3Passivating film 3, SiNxAntireflective coating 4,
6 layers of positive silver grating line layer 5 and positive silver electrode point；It is thin that the back side of N-type substrate silicon wafer is successively arranged super thin oxide layer 7, P doping n-type silicon
Layer 8, back metal electrode layer 9 and 10 layers of point of plug-hole ag paste electrode.
It is equipped with silver paste in cathode hole and is used for plug-hole, the silver paste at the aperture of cathode hole forms stifled at the back side of N-type substrate silicon wafer 1
Hole ag paste electrode point 10.
Super thin oxide layer 7 is ultra-thin tunnelling SiO2。
By taking the wafer of 158.75*158.75mm size as an example, the manufacturer of solar battery of the MWT in conjunction with TopCon
Method includes the following steps:
(1) N-type base silicon is selected；
(2) 36 holes are made a call in N-type base silicon using laser drilling；
(3) making herbs into wool；
(4) P+ emitter is formed in N-type base silicon front, specifically uses boron diffusion way；
(5) it etches；
(6) mode of back side oxidizing annealing deposits one layer of ultra-thin silicon dioxide layer, and thickness is about 1.4nm；Oxidizing annealing uses
600s, 900sccm oxygen annealing；
(7) one layer is deposited in silicon dioxide layer and mix P amorphous silicon, deposit phosphorus-doped amorphous silicon using the preparation of LPCVD equipment, adulterate non-
After n 2 annealing 1000s, 15000sccm a flow after crystal silicon, to improve minority carrier life time；
(8) using ALD deposition di-aluminium trioxide film on positive P+ emitter；
(9) one layer of silicon nitride film is plated on aluminum oxide using PECVD；
(10) 25 positive electrode points, 36 negative electrode points (plug-hole), back metal electric field and just are printed using screen printing technique
Face metal grid lines.
Front and back sides metal is using vapor deposition Ti/Pd/Ag lamination.
Claims (10)
1. a kind of solar battery of MWT in conjunction with TopCon, it is characterised in that: the N-type substrate including being equipped with multiple cathode holes
Silicon wafer；The front of the N-type substrate silicon wafer is successively arranged P+ diffused emitter layer, Al2O3Passivating film, SiNxAntireflective coating, positive silver
Grid line layer and positive silver electrode point layer；The back side of the N-type substrate silicon wafer is successively arranged super thin oxide layer, P adulterates n-type silicon thin layer,
Back metal electrode layer and plug-hole ag paste electrode point layer.
2. solar battery of the MWT as described in claim 1 in conjunction with TopCon, it is characterised in that: set in the cathode hole
There is silver paste to be used for plug-hole, the silver paste at the aperture of cathode hole forms plug-hole ag paste electrode point at the back side of N-type substrate silicon wafer.
3. solar battery of the MWT as described in claim 1 in conjunction with TopCon, it is characterised in that: the cathode Kong Weiyuan
Taper cathode hole.
4. solar battery of the MWT as described in claim 1 in conjunction with TopCon, it is characterised in that: the super thin oxide layer
For ultra-thin tunnelling SiO2。
5. solar battery of the MWT as described in claim 1 in conjunction with TopCon, it is characterised in that: the super thin oxide layer
With a thickness of 1.4 ± 0.1nm.
6. solar battery of the MWT as described in claim 1 in conjunction with TopCon, it is characterised in that: the N-type substrate silicon wafer
On be equipped with 36 cathode holes.
7. a kind of manufacturing method of solar battery of MWT as claimed in any one of claims 1 to 6 in conjunction with TopCon, special
Sign is, includes the following steps:
Step 1, using N-type base silicon；
Step 2, laser boring is carried out in N-type base silicon, is made a call to 36 cathode holes, is done MWT technology；
Step 3, making herbs into wool；
Step 4, P+ emitter is formed in N-type base silicon front；
Step 5, it etches；
Step 6, oxidizing annealing does back side super thin oxide layer；
Step 7, phosphorus-doped amorphous silicon is deposited；
Step 8, positive depositing Al2O3And SiNxAntireflective coating；
Step 9, silk-screen printing: back electrode printing, plug-hole electrode print, the printing of back electric field, positive electrode printing.
8. the manufacturing method of solar battery of the MWT as claimed in claim 7 in conjunction with TopCon, which is characterized in that described
It in step 4, is spread using boron diffusion way boron, forms P+ diffused emitter.
9. the manufacturing method of solar battery of the MWT as claimed in claim 7 in conjunction with TopCon, which is characterized in that utilize
Prepared by LPCVD equipment deposits phosphorus-doped amorphous silicon, after n 2 annealing 1000s, 15000sccm a flow after doped amorphous silicon.
10. the manufacturing method of solar battery of the MWT as claimed in claim 7 in conjunction with TopCon, which is characterized in that oxidation
Annealing uses 600s, 900sccm oxygen annealing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910247239.1A CN109935642A (en) | 2019-03-29 | 2019-03-29 | The solar battery and its manufacturing method of a kind of MWT in conjunction with TopCon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910247239.1A CN109935642A (en) | 2019-03-29 | 2019-03-29 | The solar battery and its manufacturing method of a kind of MWT in conjunction with TopCon |
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| Publication Number | Publication Date |
|---|---|
| CN109935642A true CN109935642A (en) | 2019-06-25 |
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ID=66988678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910247239.1A Pending CN109935642A (en) | 2019-03-29 | 2019-03-29 | The solar battery and its manufacturing method of a kind of MWT in conjunction with TopCon |
Country Status (1)
| Country | Link |
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| CN (1) | CN109935642A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111477696A (en) * | 2020-04-07 | 2020-07-31 | 苏州腾晖光伏技术有限公司 | Solar cell based on passivation contact and preparation method thereof |
| CN114709275A (en) * | 2022-03-24 | 2022-07-05 | 江苏日托光伏科技股份有限公司 | Preparation method of MWT-TOPCon battery |
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| CN203423193U (en) * | 2013-07-08 | 2014-02-05 | 南京日托光伏科技有限公司 | MWT solar cell |
| CN103594529A (en) * | 2013-11-27 | 2014-02-19 | 奥特斯维能源（太仓）有限公司 | MWT and passivation combined crystal silicon solar cell and manufacturing method thereof |
| US20150280022A1 (en) * | 2014-03-28 | 2015-10-01 | International Business Machines Corporation | Surface preparation and uniform plating on through wafer vias and interconnects for photovoltaics |
| CN105304730A (en) * | 2015-09-23 | 2016-02-03 | 浙江正泰太阳能科技有限公司 | MWT cell with back passive film and preparation method thereof |
| CN107968127A (en) * | 2017-12-19 | 2018-04-27 | 泰州中来光电科技有限公司 | One kind passivation contact N-type solar cell and preparation method, component and system |
| CN108922936A (en) * | 2018-07-31 | 2018-11-30 | 晶澳（扬州）太阳能科技有限公司 | A kind of MWT solar battery and preparation method thereof |
-
2019
- 2019-03-29 CN CN201910247239.1A patent/CN109935642A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203423193U (en) * | 2013-07-08 | 2014-02-05 | 南京日托光伏科技有限公司 | MWT solar cell |
| CN103594529A (en) * | 2013-11-27 | 2014-02-19 | 奥特斯维能源（太仓）有限公司 | MWT and passivation combined crystal silicon solar cell and manufacturing method thereof |
| US20150280022A1 (en) * | 2014-03-28 | 2015-10-01 | International Business Machines Corporation | Surface preparation and uniform plating on through wafer vias and interconnects for photovoltaics |
| CN105304730A (en) * | 2015-09-23 | 2016-02-03 | 浙江正泰太阳能科技有限公司 | MWT cell with back passive film and preparation method thereof |
| CN107968127A (en) * | 2017-12-19 | 2018-04-27 | 泰州中来光电科技有限公司 | One kind passivation contact N-type solar cell and preparation method, component and system |
| CN108922936A (en) * | 2018-07-31 | 2018-11-30 | 晶澳（扬州）太阳能科技有限公司 | A kind of MWT solar battery and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111477696A (en) * | 2020-04-07 | 2020-07-31 | 苏州腾晖光伏技术有限公司 | Solar cell based on passivation contact and preparation method thereof |
| CN114709275A (en) * | 2022-03-24 | 2022-07-05 | 江苏日托光伏科技股份有限公司 | Preparation method of MWT-TOPCon battery |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190625 |
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| RJ01 | Rejection of invention patent application after publication |