CN109801911A - A kind of integrated IGBT device of mixing cellular type - Google Patents
A kind of integrated IGBT device of mixing cellular type Download PDFInfo
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- CN109801911A CN109801911A CN201910085987.4A CN201910085987A CN109801911A CN 109801911 A CN109801911 A CN 109801911A CN 201910085987 A CN201910085987 A CN 201910085987A CN 109801911 A CN109801911 A CN 109801911A
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- 230000001413 cellular effect Effects 0.000 title claims abstract description 113
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
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- 230000008021 deposition Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- -1 phosphonium ion Chemical class 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005516 deep trap Effects 0.000 description 2
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- 230000005611 electricity Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
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- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- 101150097440 PADI6 gene Proteins 0.000 description 1
- 102100035732 Protein-arginine deiminase type-6 Human genes 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 230000003834 intracellular effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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Abstract
The present invention relates to a kind of mixing cellular types to integrate IGBT device, and active area includes groove cellular region (2) and flat element born of the same parents area (3), and groove cellular region is made of groove-shaped IGBT cellular, and plane cellular region is made of plane IGBT cellular.The advantages of integrated IGBT device of mixing cellular type of the invention, one chip is interior while having groove-shaped and plane IGBT structure cell, and independent control grid there are two tools, combines the two, with more preferably device performance.
Description
Technical field
The present invention relates to a kind of IGBT devices more particularly to a kind of mixing cellular type to integrate IGBT device.
Background technique
Traditional planar gate IGBT is situated between by gate oxide, planar polysilicon gate electrode, the area JFET, emitter electrode, insulation
Matter layer, N+ emitter region, p-well region, the deep-well region P+, the drift region N-, p-type collector area and collector composition.Traditional plane is exhausted
Conductance modulation effect near edge grid bipolar transistor device structure upper is poor, and self-characteristic determines its front carrier
Concentration is smaller.Electric current is flowed through from p-well region top can generate JFET impedance, therefore its on state voltage with higher and on-state damage
Consumption.Traditional planear insulated gate bipolar transistor device due in its active area cell density it is larger, when causing break-over of device
Effective channel width is smaller, and current density is also smaller.In order to increase the current density of planar gate IGBT, increase plane is usually taken
Grid IGBT conducting channel area, the method for reducing the area PIN area, but do so and will also result on state voltage increase.And it is traditional
Trench gate IGBT, since grid and source electrode overlapping area are very big, so that input capacitance is also very big, when causing devices switch,
The grid charge and discharge time is longer, and dynamic loss is also bigger.In addition, the cell density of traditional trench gate IGBT is smaller, device
Effective channel width is larger when conducting, larger so as to cause saturation current density, and shorted devices tolerance is small.Trench-gate and substrate
Between capacitor it is reversed to pass so that trench IGBT device Crss(Reverse transfer capacitance with higher
Transmission of electricity is held).The high Crss of IGBT device reduces the switching speed of device, also keeps switching energy loss higher.
Summary of the invention
In order to solve the above technical problems, intracellular the object of the present invention is to provide a kind of single member while there is groove-shaped peace
The mixing cellular type of face type IGBT structure cell integrates IGBT device.Moreover, it relates to which the mixing cellular type is integrated
The preparation method of IGBT device.
Mixing cellular type of the invention integrates IGBT device, and active area includes groove cellular region and flat element born of the same parents area, institute
It states groove cellular region to be made of groove-shaped IGBT cellular, the plane cellular region is made of plane IGBT cellular.
Further, mixing cellular type of the invention integrates IGBT device, and the groove cellular region is equipped with first grid, institute
It states plane cellular region and is equipped with the second grid to insulate with the first grid.
Further, mixing cellular type of the invention integrates IGBT device, further includes chip body, the edge of chip body
Equipped with the terminal protection area around groove cellular region and the setting of flat element born of the same parents area, the surface of the groove cellular region is equipped with first grid
PAD, the surface of the plane cellular region are equipped with second grid PAD, and chip hair is additionally provided on groove cellular region and flat element born of the same parents area
The back side of emitter-base bandgap grading, chip body is equipped with collector.
Further, mixing cellular type of the invention integrates IGBT device, and the groove-shaped IGBT cellular includes the first lining
Bottom, the surface of the first substrate are equipped with groove, and the medial surface of groove is equipped with the first gate oxide, and the first grid is located at groove
Interior, the two sides of groove are the first p-type base area, and the centre of the first p-type base area is the first N+ emitter region, the centre of the first N+ emitter region
For the first deep-well region P+, the first insulating medium layer is deposited on the first p-type base area, deposits one layer of emitter on the first insulating medium layer
Emitter of the metal as groove-shaped IGBT cellular, the emitter metal of each groove-shaped IGBT cellular mutually interconnects in groove cellular region
Connect and connect with the emitter on chip body surface, after the first grid mutual connection of each groove-shaped IGBT cellular with first grid PAD
Connection, the back side of the first substrate are the first p-type collector area, and one layer of metal of deposition is as first below the first p-type collector area
Collector electrode metal.
Further, mixing cellular type of the invention integrates IGBT device, and the plane IGBT cellular includes the second lining
Bottom, the second grid above the second substrate are equipped with the second gate oxide, the second substrate between the second substrate and second grid
Surface be equipped be located at second grid immediately below the area JFET, the area JFET two sides be equipped with the second p-type base area, the second p-type base area
Centre is the 2nd N+ emitter region, and the centre of the 2nd N+ emitter region is the 2nd deep-well region P+, the second insulation of deposition on the second p-type base area
Dielectric layer, emitter of the one layer of emitter metal of deposition as plane IGBT cellular, plane cellular on the second insulating medium layer
It is connect after the emitter interconnection of each plane IGBT cellular with the emitter of chip body in area, the of each plane IGBT cellular
It is connect after two gate interconnections with second grid PAD, the back side of the second substrate is the second p-type collector area, the second p-type collector area
One layer of metal of bottom surface deposition as the second collector electrode metal.
According to the above aspect of the present invention, the present invention has at least the following advantages: mixing cellular type of the invention integrates IGBT device, this
The mixing cellular type of invention integrates IGBT device, and the IGBT structure that two kinds have the characteristics that different application is integrated in single IGBT core
In piece, the advantages of combining two kinds of IGBT, keep its existing groove-shaped IGBT conduction voltage drop low, the big advantage of current density, and have
The advantages of plane IGBT saturation current is small, and short-circuit tolerance is high, high reliablity.
The above description is only an overview of the technical scheme of the present invention, in order to better understand the technical means of the present invention,
And can be implemented in accordance with the contents of the specification, the following is a detailed description of the preferred embodiments of the present invention and the accompanying drawings.
Detailed description of the invention
Fig. 1 is the chip front side structural schematic diagram that mixing cellular type of the invention integrates IGBT device；
Fig. 2 is the chip front side structural schematic diagram that there is the mixing cellular type of another domain structure to integrate IGBT device；
Fig. 3 is the cellular region longitudinal direction schematic cross-sectional view for mixing cellular type and integrating IGBT device；
Fig. 4 is that mixing cellular type integrates groove-shaped IGBT cellular longitudinal direction schematic cross-sectional view in IGBT device；
Fig. 5 is that mixing cellular type integrates IGBT device planar-type IGBT cellular longitudinal direction schematic cross-sectional view；
Fig. 6 is the cellular region longitudinal direction schematic cross-sectional view that the improved mixing cellular type in bottom integrates IGBT device；
Fig. 7 is the cellular region longitudinal direction schematic cross-sectional view that the further improved mixing cellular type in bottom integrates IGBT device.
Specific embodiment
With reference to the accompanying drawings and examples, specific embodiments of the present invention will be described in further detail.Implement below
Example is not intended to limit the scope of the invention for illustrating the present invention.
Referring to Fig. 1 to Fig. 7, a kind of mixing cellular type of a preferred embodiment of the present invention integrates IGBT device, active area packet
Groove cellular region 2 and flat element born of the same parents area 3 are included, groove cellular region is made of groove-shaped IGBT cellular, and plane cellular region is by plane
IGBT cellular is constituted.
Mixing cellular type of the invention integrates IGBT device, the IGBT structure that two kinds have the characteristics that different application is integrated in single
In igbt chip, the advantages of combining two kinds of IGBT, keep its existing groove-shaped IGBT conduction voltage drop low, big excellent of current density
The advantages of point, and have plane IGBT saturation current small, short-circuit tolerance is high, high reliablity.
Preferably, mixing cellular type of the invention integrates IGBT device, groove cellular region is equipped with first grid 12-A, puts down
Face cellular region is equipped with the second grid 12-B to insulate with first grid.
Two kinds of IGBT structures are respectively controlled using individual grid, make its gate voltage stable and consistent, and be uniformly distributed, and are punctured
Voltage also stable and consistent.Specifically, two independent grids are separated by insulating medium layer, the grid of two kinds of cellular regions is all
It is to be interconnected by polysilicon, and be connected with respective grid PAD, wherein first grid is connect with first grid PAD, second gate
Pole is connect with second grid PAD.
Preferably, mixing cellular type of the invention integrates IGBT device, it further include chip body 1, the side of chip body
Edge is equipped with the terminal protection area 4 being arranged around groove cellular region and flat element born of the same parents area, and the surface of groove cellular region is equipped with first grid
PAD5, the surface of plane cellular region are equipped with second grid PAD6, are additionally provided with chip emission in groove cellular region and flat element born of the same parents area
The back side of pole, chip body is equipped with collector.
It is spaced apart and to chip surface metallization etch between above-mentioned each electrode.
Preferably, mixing cellular type of the invention integrates IGBT device, groove-shaped IGBT cellular includes the first substrate
201, the surface of the first substrate is equipped with groove 202, and the medial surface of groove is equipped with the first gate oxide 203, and first grid 204
In in groove, the two sides of groove are the first p-type base area 205, and the centre of the first p-type base area is the first N+ emitter region 206, the first N+
The centre of emitter region is the first deep-well region P+ 207, deposits the first insulating medium layer 208, the first dielectric on the first p-type base area
Emitter 209 of the one layer of emitter metal as groove-shaped IGBT cellular, each groove-shaped IGBT in groove cellular region are deposited on layer
The emitter metal of cellular is connected with each other and connect with the emitter on chip body surface 11, the first of each groove-shaped IGBT cellular
It is connect after grid mutual connection with first grid PAD, the back side of the first substrate is the first p-type collector area 210, the first p-type collector
One floor metal of deposition is as the first collector electrode metal 211 below area.
Preferably, mixing cellular type of the invention integrates IGBT device, plane IGBT cellular includes the second substrate
301, the second grid 304 above the second substrate is equipped with the second gate oxide 303 between the second substrate and second grid,
The surface of second substrate is equipped with the area JFET 302 being located at immediately below second grid, and the area JFET two sides are equipped with the second p-type base area 305,
The centre of second p-type base area is the 2nd N+ emitter region 306, and the centre of the 2nd N+ emitter region is the 2nd deep-well region P+ 307, the 2nd P
The second insulating medium layer 308 is deposited on type base area, one layer of emitter metal of deposition is as plane on the second insulating medium layer
The emitter 309 of IGBT cellular, the hair in plane cellular region after the emitter interconnection of each plane IGBT cellular with chip body
Emitter-base bandgap grading 11 connects, and connect after the second grid interconnection of each plane IGBT cellular with second grid PAD, the back side of the second substrate is
Second p-type collector area 310, one layer of metal of bottom surface deposition of the second p-type collector area is as the second collector electrode metal 311.
Mixing cellular type of the invention integrates IGBT device, is deposited with insulating medium layer between adjacent cellular, passes through insulation
The grid and emitter of each cellular is isolated in dielectric layer；Redeposited one layer of metal electrode on insulating medium layer, metal electrode interconnection
Igbt chip emitter is formed afterwards；Insulating medium layer with a thickness of 1-1.5um；Metal electrode with a thickness of 1-5um, metal electricity
Pole material can use AlSi, AlSiCu or other materials, and insulating medium layer can be earth silicon material.As further changing
Structure cell into, groove-shaped IGBT cellular can use PT-IGBT, NPT-IGBT, CSTBT or other structures, this all should be
In protection scope of the present invention；As a further improvement, the method for preparing IGBT has diffusion method, ion implantation and epitaxy etc.
Method, the IGBT structure prepared with various methods, this all should be within the scope of the present invention, specifically, mixing of the invention
Cellular type integrate IGBT device the production method is as follows descriptions:
1) drift region of IGBT device is served as substrate material using n type single crystal silicon material or N-type epitaxial silicon material.
2) forming process for ignoring terminal area forms trench IGBT and plane IGBT structure cell in active area.
3) JFET being formed using lithography layout and injecting window, to JFET injection window injection high energy phosphonium ion and high temperature pushes away
Trap forms the area JFET in the cellular of plane IGBT region, while can also form the area CS in the cellular in trench IGBT region.
4) etching groove window is formed using lithography layout, etching groove barrier layer is served as with thick oxide layer and is etched downwards
Silicon slot, etching forms deep trench in trench IGBT region.
5) oxide layer of substrate surface is removed.
6) gate oxide is formed by high-temperature oxydation in active area.
7) deposit polycrystalline silicon, with polysilicon covering groove and substrate surface.
8) lithography layout etches polycrystalline silicon and gate oxide are utilized.Only retain the polysilicon and gate oxide in groove, with
And in plane IGBT region polysilicon mask layer region polysilicon and gate oxide.
9) the injection window of p-type base area is formed using polysilicon layer autoregistration.
10) high energy boron ion is injected into the injection window of p-type base area and high temperature pushes away trap, form p-type base area.
11) the injection window of N+ emitter region is formed using polysilicon layer autoregistration.
12) high energy arsenic ion is injected into the injection window of N+ emitter region and high temperature pushes away trap, form N+ emitter region.
13) insulating medium layer is deposited in device surface.
14) etching insulating medium layer forms emitter metal contact hole window.
15) boron ion is injected into emitter contact hole window, forms P+ deep trap.Highly doped N+ emitter region and P+ deep trap
The overlapping setting in area, the contact zone for collectively forming IGBT emitter ensures that contact resistance is sufficiently small.
16) emitter metal is deposited, etching forms emitter metal layer.So that shape between emitter region highly doped silicon and metal
At Ohmic contact, reduce contact resistance.
17) after the front-side metallization of power device to be done, turning-over of chip is carried out back thinning.
18) boron ion injection is carried out in substrate back and high temperature pushes away trap, form back side p-type collector area；P-type collector area
Play the role of controlling hole emission efficiency.
19) back metal of power device forms collector electrode metal.
The above is only the preferred embodiment of the present invention, are not intended to restrict the invention, it is noted that this technology is led
For the those of ordinary skill in domain, without departing from the technical principles of the invention, several improvements and modifications can also be made,
These improvements and modifications also should be regarded as protection scope of the present invention.
Claims (5)
1. a kind of mixing cellular type integrates IGBT device, it is characterised in that: its active area includes groove cellular region and flat element born of the same parents
Area, the groove cellular region are made of groove-shaped IGBT cellular, and the plane cellular region is made of plane IGBT cellular.
2. mixing cellular type according to claim 1 integrates IGBT device, it is characterised in that: the groove cellular region is equipped with
First grid, the plane cellular region are equipped with the second grid to insulate with the first grid.
3. mixing cellular type according to claim 2 integrates IGBT device, it is characterised in that: further include chip body, core
The edge of piece ontology is equipped with the terminal protection area being arranged around groove cellular region and flat element born of the same parents area, the surface of the groove cellular region
Equipped with first grid PAD, the surface of the plane cellular region is equipped with second grid PAD, on groove cellular region and flat element born of the same parents area
It is additionally provided with chip emission pole, the back side of chip body is equipped with collector.
4. mixing cellular type according to claim 3 integrates IGBT device, it is characterised in that: the groove-shaped IGBT cellular
Including the first substrate, the surface of the first substrate is equipped with groove, and the medial surface of groove is equipped with the first gate oxide, the first grid
Pole is located in the groove, and the two sides of groove are the first p-type base area, and the centre of the first p-type base area is the first N+ emitter region, the first N+ hair
The centre for penetrating area is the first deep-well region P+, deposits the first insulating medium layer on the first p-type base area, deposits on the first insulating medium layer
Emitter of the one layer of emitter metal as groove-shaped IGBT cellular, the emitter of each groove-shaped IGBT cellular in groove cellular region
Metal, which is connected with each other, simultaneously to be connect with the emitter on chip body surface, with the after the first grid mutual connection of each groove-shaped IGBT cellular
One grid PAD connection, the back side of the first substrate are the first p-type collector area, deposit one layer of metal below the first p-type collector area
As the first collector electrode metal.
5. mixing cellular type according to claim 4 integrates IGBT device, it is characterised in that: the plane IGBT cellular
Second, which is equipped with, including the second substrate, the second grid above the second substrate, between the second substrate and second grid deletes oxidation
Layer, the surface of the second substrate are equipped with the area JFET being located at immediately below second grid, and the area JFET two sides are equipped with the second p-type base area, the
The centre of two p-type base areas is the 2nd N+ emitter region, and the centre of the 2nd N+ emitter region is the 2nd deep-well region P+, on the second p-type base area
The second insulating medium layer is deposited, transmitting of the one layer of emitter metal of deposition as plane IGBT cellular on the second insulating medium layer
Pole is connect after the emitter interconnection of each plane IGBT cellular with the emitter of chip body in plane cellular region, each plane
It being connect after the second grid interconnection of IGBT cellular with second grid PAD, the back side of the second substrate is the second p-type collector area, the
One layer of metal of bottom surface deposition of two p-type collector areas is as the second collector electrode metal.
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| CN201910085987.4A CN109801911A (en) | 2019-01-29 | 2019-01-29 | A kind of integrated IGBT device of mixing cellular type |
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| CN201910085987.4A CN109801911A (en) | 2019-01-29 | 2019-01-29 | A kind of integrated IGBT device of mixing cellular type |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110349907A (en) * | 2019-07-23 | 2019-10-18 | 上海擎茂微电子科技有限公司 | A kind of semiconductor power device and preparation method thereof |
| CN112117327A (en) * | 2020-08-17 | 2020-12-22 | 江苏东海半导体科技有限公司 | An IGBT device and its manufacturing process |
| CN112687654A (en) * | 2020-12-14 | 2021-04-20 | 株洲中车时代半导体有限公司 | Trench gate IGBT device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120007139A1 (en) * | 2009-03-24 | 2012-01-12 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
| CN102738238A (en) * | 2011-04-15 | 2012-10-17 | 快捷韩国半导体有限公司 | Power semiconductor device and methods for fabricating the same |
| US20160268404A1 (en) * | 2013-07-31 | 2016-09-15 | Alpha And Omega Semiconductor Incorporated | Dual trench-gate igbt structure |
| CN107706237A (en) * | 2017-10-31 | 2018-02-16 | 珠海格力电器股份有限公司 | Insulated gate bipolar transistor device and manufacturing method thereof, power electronic device |
| CN108428740A (en) * | 2018-02-13 | 2018-08-21 | 株洲中车时代电气股份有限公司 | A kind of igbt chip with the compound grid structure containing empty grid |
| CN109244129A (en) * | 2018-11-09 | 2019-01-18 | 上海擎茂微电子科技有限公司 | A kind of trench-type insulated gate bipolar transistor device and preparation method |
-
2019
- 2019-01-29 CN CN201910085987.4A patent/CN109801911A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120007139A1 (en) * | 2009-03-24 | 2012-01-12 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
| CN102738238A (en) * | 2011-04-15 | 2012-10-17 | 快捷韩国半导体有限公司 | Power semiconductor device and methods for fabricating the same |
| US20160268404A1 (en) * | 2013-07-31 | 2016-09-15 | Alpha And Omega Semiconductor Incorporated | Dual trench-gate igbt structure |
| CN107706237A (en) * | 2017-10-31 | 2018-02-16 | 珠海格力电器股份有限公司 | Insulated gate bipolar transistor device and manufacturing method thereof, power electronic device |
| CN108428740A (en) * | 2018-02-13 | 2018-08-21 | 株洲中车时代电气股份有限公司 | A kind of igbt chip with the compound grid structure containing empty grid |
| CN109244129A (en) * | 2018-11-09 | 2019-01-18 | 上海擎茂微电子科技有限公司 | A kind of trench-type insulated gate bipolar transistor device and preparation method |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110349907A (en) * | 2019-07-23 | 2019-10-18 | 上海擎茂微电子科技有限公司 | A kind of semiconductor power device and preparation method thereof |
| CN112117327A (en) * | 2020-08-17 | 2020-12-22 | 江苏东海半导体科技有限公司 | An IGBT device and its manufacturing process |
| CN112117327B (en) * | 2020-08-17 | 2022-06-28 | 江苏东海半导体科技有限公司 | IGBT device and manufacturing process thereof |
| CN112687654A (en) * | 2020-12-14 | 2021-04-20 | 株洲中车时代半导体有限公司 | Trench gate IGBT device |
| CN112687654B (en) * | 2020-12-14 | 2024-02-23 | 株洲中车时代半导体有限公司 | Trench gate IGBT device |
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Application publication date: 20190524 |