CN109713553A - A kind of terahertz emission source and its manufacturing method - Google Patents
A kind of terahertz emission source and its manufacturing method Download PDFInfo
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- CN109713553A CN109713553A CN201811621931.8A CN201811621931A CN109713553A CN 109713553 A CN109713553 A CN 109713553A CN 201811621931 A CN201811621931 A CN 201811621931A CN 109713553 A CN109713553 A CN 109713553A
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Abstract
The embodiment of the present invention discloses a kind of terahertz emission source and its manufacturing method.Wherein, the terahertz emission source includes antenna, vacuum passage layer and photocathode, the antenna includes substrate, feed strip and antenna arm, the feed strip is connected with the antenna arm, the feed strip and antenna arm setting are over the substrate, in the vacuum passage layer, vacuum passage is set, the vacuum passage runs through the vacuum passage layer, the both ends of the vacuum passage are arranged in the feed strip and the photocathode, the photocathode, seal chamber is formed between the vacuum passage layer and the feed strip, in the photocathode side opposite with the vacuum passage, photocathode substrate is set.Terahertz emission source provided in an embodiment of the present invention and its manufacturing method, improve the power in terahertz emission source.
Description
Technical field
The present embodiments relate to photoelectron technical fields, and in particular to a kind of terahertz emission source and its manufacturing method.
Background technique
The frequency range of Terahertz (THz) electromagnetic wave is 0.1~10THz, and wave-length coverage is 0.03~3mm, it is a kind of
Electromagnetic wave between microwave, millimeter wave and infrared ray.Terahertz emission is in physics, chemistry, astronomy, molecular spectrum, life
Life science and the basic fields such as medical science and medical imaging, environmental monitoring, material tests, food inspection, radio astronomy,
Before the Applied research fields such as mobile communication, satellite communication and military radar have great scientific research value and wide application
Scape.
Being integrated with the Continuous Wave Tunable THz source of antenna, there are two main classes at present, is that the light based on photoconducting antenna is mixed respectively
Frequency device and be based on high speed uniline carrier optical detector (UTC-PD).Two kinds of technical solutions used optical beat technology as
Tuning source, main difference is that the sensor devices between two antenna arms.Photoconducting antenna optical mixer unit is in semiconductor light
It leads and makes antenna on material, common light-guide material has the GaAs of low-temperature epitaxy, indium phosphide etc., and common antenna type has butterfly
Shape antenna (Bowtie) and log spiral antenna.And it is mainly based on high speed uniline carrier optical detector continuous wave THz source
Loaded antenna arm is distinguished in two poles of UTC-PD, and main antenna type is Bowtie.Due to the terahertz of both above-mentioned devices
Hereby signal is to generate in solid-state semiconductor device, and Terahertz carrier is to two antenna electrodes when moving, because
Keep Terahertz charge carrier energy loss larger for the presence of the factors such as lattice scattering；In addition, the total amount of Terahertz carrier by
Limitation.Therefore, the power of both above-mentioned continuous wave THz sources is all lower, in nanowatt to microwatt rank.
Therefore, a kind of terahertz emission source how is proposed, the power that can be improved terahertz emission source becomes industry urgently
The important topic of solution.
Summary of the invention
For the defects in the prior art, the embodiment of the present invention provides a kind of terahertz emission source and its manufacturing method.
On the one hand, the embodiment of the present invention proposes a kind of terahertz emission source, including antenna, vacuum passage layer and photocathode,
Wherein:
The antenna includes substrate, feed strip and antenna arm, and the feed strip is connected with the antenna arm, the feed strip
Over the substrate with antenna arm setting, vacuum passage is set in the vacuum passage layer, the vacuum passage runs through institute
State vacuum passage layer, the feed strip and the photocathode are arranged in the both ends of the vacuum passage, the photocathode, described true
Seal chamber is formed between empty channel layer and the feed strip, light is set in the photocathode side opposite with the vacuum passage
Cathode substrate.
Wherein, there are two the antenna arms, the two sides of the feed strip are symmetricly set on, the antenna arm is trapezoidal.
Wherein, the antenna arm is butterfly, and the side of the feed strip is arranged in.
Wherein, the antenna is plane log spiral antenna.
Wherein, the photocathode and the feed strip are arranged in parallel.
Wherein, the terahertz emission source further includes optical waveguide, and the optical waveguide fits with the photocathode substrate, institute
State the optical waveguide side setting light blocking layer opposite with the photocathode substrate.
Wherein, the vacuum passage is in cuboid.
On the other hand, the embodiment of the present invention provides a kind of manufacturer in terahertz emission source described in any of the above-described embodiment
Method, comprising:
The feed strip and antenna arm of antenna are made on non-photo-sensing substrate；Wherein, the substrate is non-photo-sensing substrate；
The deposition of insulative material layer in the feed strip；
Vacuum passage is etched in the insulation material layer, obtains vacuum passage layer；
Photocathode is formed in light-transparent substrate material layer；
The vacuum passage layer is spliced with the photocathode.
Wherein, the method also includes:
Optical waveguide is formed in the light-transparent substrate material layer；
Light blocking layer is formed in the optical waveguide.
Wherein, the substrate uses sapphire or quartz glass.
Terahertz emission source provided in an embodiment of the present invention and its manufacturing method, including antenna, vacuum passage and photocathode,
Antenna includes substrate, feed strip and antenna arm, and feed strip is connected with antenna arm, and feed strip and antenna arm setting on substrate, are presented
The both ends of vacuum passage are arranged in electric band and photocathode, seal chamber are formed between photocathode, vacuum passage and feed strip, in time
Photocathode substrate is arranged in the pole side opposite with vacuum passage, since the generation and movement of Terahertz carrier are in vacuum passage
It realizes, can be avoided the limitation of Terahertz carrier total amount and reduces the energy loss in transmission process, improve Terahertz spoke
Penetrate the power in source.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it is clear that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 a is the structural schematic diagram in the terahertz emission source that one embodiment of the invention provides；
Fig. 1 b is the antenna structure view in the terahertz emission source that one embodiment of the invention provides；
Fig. 2 be another embodiment of the present invention provides terahertz emission source antenna structure view；
Fig. 3 is the antenna structure view in the terahertz emission source that further embodiment of this invention provides；
Fig. 4 be another embodiment of the present invention provides terahertz emission source structural schematic diagram；
Fig. 5 is the flow diagram of the manufacturing method in the terahertz emission source that one embodiment of the invention provides；
Fig. 6 be another embodiment of the present invention provides terahertz emission source manufacturing method flow diagram；
Fig. 7 a is the antenna manufacture schematic diagram that one embodiment of the invention provides；
Fig. 7 b is the insulation material layer manufacture schematic diagram that one embodiment of the invention provides；
Fig. 7 c is the vacuum passage layer manufacture schematic diagram that one embodiment of the invention provides；
Fig. 7 d is the photocathode manufacture schematic diagram that one embodiment of the invention provides；
Fig. 7 e is the splicing schematic diagram of the vacuum passage layer that one embodiment of the invention provides and photocathode；
Description of symbols:
1- substrate；2- feed strip；
3- antenna arm；4- vacuum passage layer；
5- vacuum passage；6- photocathode；
7- photocathode substrate；8- optical waveguide；
9- light blocking layer；71- substrate；
72- feed strip；73- antenna arm；
74- insulation material layer；75- vacuum passage；
76- vacuum passage layer；77- photocathode；
78- light-transparent substrate material layer.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached in the embodiment of the present invention
Figure, technical solution in the embodiment of the present invention are explicitly described, it is clear that described embodiment is a part of the invention
Embodiment, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making wound
Every other embodiment obtained under the premise of the property made labour, shall fall within the protection scope of the present invention.
Fig. 1 a is the structural schematic diagram in the terahertz emission source that one embodiment of the invention provides, and Fig. 1 b is that the present invention one is implemented
The antenna structure view in the terahertz emission source that example provides, as seen in figure la and lb, Terahertz provided in an embodiment of the present invention
Radiation source, including antenna, vacuum passage layer 4 and photocathode 6, in which:
The antenna includes substrate 1, feed strip 2 and antenna arm 3, and feed strip 2 is connected with antenna arm 3, feed strip 2 and antenna
Arm 3 is arranged on substrate 1, vacuum passage 5 is arranged in vacuum passage layer 4, vacuum passage 5 runs through vacuum passage layer 4, feed strip 2
The both ends of vacuum passage 5 are set with photocathode 6, form seal chamber between photocathode 6, vacuum passage layer 4 and feed strip 2,
Photocathode substrate 7 is arranged in the side opposite with vacuum passage 4 of photocathode 6.
Specifically, substrate 1 using can terahertz electromagnetic wave thoroughly non-photoactive material, such as sapphire and glass etc..Feedback
Electric band 2 uses in conductive metal or electrical conductivity alloy seal chamber as vacuum, and vacuum passage 5 can use truncated cone-shaped, cylinder, length
Cube shape, the square bodily form, prismatic table shape etc..Photocathode 6 can use metal photocathode, negative electron affinity photocathode or positive electricity
Sub- affinity photocathode.Antenna arm 3 can be symmetricly set on the two sides of feed strip 2, trapezoidal, and antenna arm 3 also can be set
The side of feed strip 2 is in butterfly.The antenna can also use plane log spiral antenna.Photocathode substrate 7 can use glass
The translucent materials such as glass, sapphire, photocathode substrate 7 are used to support photocathode 6.Wherein, the thickness of feed strip 2 according to it is practical with into
Row setting, the embodiment of the present invention is without limitation.
Terahertz emission source provided in an embodiment of the present invention excites the terahertz emission source under the irradiation of laser
Photocathode 6 emit Terahertz electron beam roll into a ball to feed strip 2, so that feed strip 2 is received corresponding Terahertz carrier.It can lead to
Two central wavelengths are crossed in distributed Feedback (Distributed Feedback, abbreviation DFB) laser of 400nm~800nm
Two light beams are generated, two-beam is combined into an optical fiber using combiner and is transmitted, then make light beam through light by optical waveguide
Cathode substrate 7 is irradiated on photocathode 6, generation terahertz light electric current, on above-mentioned terahertz light current feed to feed strip 2
Generate the terahertz emission of continuous wave.Wherein, two Distributed Feedback Lasers are configured according to beat principle.
Two light beams can also be generated in the pulse laser of 400nm~800nm by two central wavelengths, utilize combining
Two-beam is combined into an optical fiber and transmits by device, then so that light beam is irradiated to photocathode 6 through photocathode substrate 7 by optical waveguide
On, terahertz light electric current is generated, can produce the Terahertz spoke of continuous wave on above-mentioned terahertz light current feed to feed strip 2
It penetrates.Wherein, two pulse lasers are configured according to beat principle.
Terahertz emission source provided in an embodiment of the present invention, including antenna, vacuum passage and photocathode, antenna include lining
Bottom, feed strip and antenna arm, feed strip are connected with antenna arm, and feed strip and antenna arm are arranged on substrate, in vacuum passage layer
Vacuum passage is set, and vacuum passage runs through vacuum passage layer, and the both ends of vacuum passage, time is arranged in feed strip and photocathode
Seal chamber is formed between pole, vacuum passage layer and feed strip, photocathode base is set in the photocathode side opposite with vacuum passage
Bottom can be avoided the limit of Terahertz carrier total amount since generation and the movement of Terahertz carrier are realized in vacuum passage
Energy loss in system and reduction transmission process, improves the power in terahertz emission source, can make the Terahertz of Continuous Wave Tunable
The power ascension of radiation source is to milliwatt to watt magnitude.
As shown in Figure 1 b, there are two antenna arms 3, the two sides of feed strip 2 are symmetricly set on, antenna arm 3 is trapezoidal.
Fig. 2 be another embodiment of the present invention provides terahertz emission source antenna structure view, as shown in Fig. 2,
On the basis of the various embodiments described above, further, antenna arm 3 is butterfly, and the side of feed strip 2 is arranged in.
Fig. 3 is the antenna structure view in the terahertz emission source that further embodiment of this invention provides, as shown in figure 3, institute
Stating antenna is plane log spiral antenna, and each antenna arm 3 has two edge lines, and the edge line is equiangular helical spiral,
Antenna arm 3 is in one plane unfolded by specific Curvature varying around rotation.
On the basis of the various embodiments described above, further, photocathode 6 and feed strip 2 are arranged in parallel.
Fig. 4 be another embodiment of the present invention provides terahertz emission source structural schematic diagram, as shown in figure 4, above-mentioned
On the basis of each embodiment, further, the present invention is that the terahertz emission source that embodiment provides further includes optical waveguide 8, light wave
It leads 8 to fit with photocathode substrate 7, optical waveguide is used for transmission light beam, and the light beam is irradiated to time through photocathode substrate 7
On pole 6, excitation photocathode 6 generates terahertz light electric current, and light blocking layer 9 is arranged in the side opposite with photocathode substrate 7 of optical waveguide 8,
Light blocking layer 9 is for avoiding the other light sources such as visible light from generating interference to the terahertz emission source.
On the basis of the various embodiments described above, further, which is characterized in that vacuum passage 5 is in cuboid.
Fig. 5 is the flow diagram of the manufacturing method in the terahertz emission source that one embodiment of the invention provides, such as Fig. 5 institute
Show, the manufacturing method in terahertz emission source described in a kind of any of the above-described embodiment provided in an embodiment of the present invention, comprising:
S501, the feed strip and antenna arm for making antenna on substrate；Wherein, the substrate is non-photo-sensing substrate；
Specifically, when manufacturing terahertz emission source, chemical vapor deposition method or physical vapor deposition be can use
Technique produces the feed strip and antenna arm of antenna on non-photo-sensing substrate, the feed strip can using metal, alloy or
The material of other conductive energy, such as metallic aluminium or silicon copper；The antenna arm can using metal, alloy or
The material of other conductive energy.Wherein, the substrate can be using the materials such as sapphire or glass, the thickness of the substrate
Degree is 0.5~5 millimeter, and the thickness of the feed strip and the antenna arm is configured based on practical experience, the embodiment of the present invention
Without limitation.Wherein, the shape of the antenna arm can use trapezoidal, butterfly or equiangular spiral wire shaped.
S502, the deposition of insulative material layer in the feed strip；
Specifically, it after producing the antenna on substrate, is formed sediment using chemical vapor deposition method or physical vapor
Product technique deposition of insulative material layer in the feed strip, the insulation material layer with a thickness of 1~10 micron.
S503, vacuum passage is etched in the insulation material layer, obtains vacuum passage layer；
Specifically, after obtaining insulation material layer, can by the way of dry etching, to the insulation material layer into
Row etching, obtains vacuum passage, and the insulation material layer for etching the vacuum passage is vacuum passage layer.The vacuum passage
Shape can be cylinder, truncated cone-shaped, cuboid or prismatic table shape, the length of the vacuum passage and the insulation material layer
Thickness it is equal, i.e., the described vacuum passage run through the insulation material layer.Wherein, the shape of the vacuum passage layer can be in circle
The shapes such as cylindricality, rectangular.
S504, photocathode is formed in light-transparent substrate material layer；
Specifically, the photocathode with a thickness of 100 rans, it is very thin, need the support photocathode
Substrate, photocathode production platform vacuum chamber in, using light-transparent substrate material layer as photocathode substrate, in the photocathode
Deposition forms the photocathode in substrate.Wherein, the photocathode substrate can be using translucent materials such as sapphires；The time
The thickness of pole substrate is configured according to actual needs, and the embodiment of the present invention is without limitation.
S505, the vacuum passage layer is spliced with the photocathode.
Specifically, after having made the photocathode, photocathode production platform another vacuum chamber by institute
It states vacuum passage layer to be spliced with the photocathode, makes shape between the photocathode, the vacuum passage layer and the anode
At the seal chamber of vacuum, the terahertz emission source is produced.
Terahertz emission source provided in an embodiment of the present invention makes the feed strip and antenna of antenna on non-photo-sensing substrate
Arm, the deposition of insulative material layer in feed strip etch vacuum passage in insulation material layer, vacuum passage layer are obtained, in light transmission
Photocathode is formed in substrate material layer, vacuum passage layer is spliced with photocathode, completes the manufacture in terahertz emission source, by
It is realized in vacuum passage in the generation of Terahertz carrier with movement, can be avoided the limitation and drop of Terahertz carrier total amount
Energy loss during low transmission improves the power in terahertz emission source.
Fig. 6 be another embodiment of the present invention provides terahertz emission source manufacturing method flow diagram, such as Fig. 6 institute
Show, on the basis of the various embodiments described above, further, terahertz emission source provided in an embodiment of the present invention further include:
S506, optical waveguide is formed in the light-transparent substrate material layer；
Specifically, light beam is penetrated on photocathode substrate transport to photocathode for convenience, can use chemical gaseous phase shallow lake
Product technique or physical vapor deposition process produce optical waveguide in the light-transparent substrate material layer, and the optical waveguide can adopt
Use quartz glass.Wherein, the thickness of the optical waveguide is configured according to actual needs, and the embodiment of the present invention is without limitation.
S507, light blocking layer is formed in the optical waveguide.
Specifically, in order to avoid the light sources such as visible light generate interference to the terahertz emission source, it can use chemistry
Vapor deposition process or physical vapor deposition process make light blocking layer in the optical waveguide, and the light blocking layer can use two
Silica.Wherein, the thickness of the light blocking layer is configured according to actual needs, and the embodiment of the present invention is without limitation.
On the basis of the various embodiments described above, further, the substrate uses sapphire or quartz glass.
Below to manufacture a terahertz emission using the manufacturing method in terahertz emission source provided in an embodiment of the present invention
For the process in source, the realization process of the manufacturing method in the terahertz emission source that embodiment that the present invention will be described in detail provides:
Fig. 7 a is that the antenna manufacture schematic diagram that one embodiment of the invention provides utilizes chemical vapor deposition as shown in Figure 7a
Technique produces the feed strip 72 with a thickness of 500 nanometers and the antenna arm with a thickness of 400 nanometers on the substrate 71 of 1 millimeters thick
73, substrate 71 uses sapphire, and feed strip 72 and antenna arm 73 use metallic aluminium.Wherein, it there are two antenna arms 73, is symmetrical arranged
In the two sides of feed strip 72, antenna arm 73 is trapezoidal, as shown in Figure 1 b.
Fig. 7 b is that the insulation material layer manufacture schematic diagram that one embodiment of the invention provides utilizes chemical gas as shown in Figure 7b
Phase depositing technics deposition of insulative material layer 74 in feed strip 72, insulation material layer 74 with a thickness of 5 microns.
Fig. 7 c is the vacuum passage manufacture schematic diagram that one embodiment of the invention provides, as shown in Figure 7 c, using dry etching
Mode insulation material layer 74 is performed etching, obtain vacuum passage 75, etch the insulation material layer 74 of vacuum passage 75 at
For vacuum passage layer 76, vacuum passage 75 is cylindrical, and the shape of vacuum passage layer 76 is in cuboid, vacuum passage 75
Length on the thickness direction of insulation material layer 74 is 5 microns.
Fig. 7 d is that the photocathode manufacture schematic diagram that one embodiment of the invention provides makes platform in photocathode as shown in figure 7d
Vacuum chamber in, in the light-transparent substrate material layer 78 of 1 millimeters thick deposition formed 100 nanometer thickness photocathode 77, photocathode
77 be metal photocathode, and light-transparent substrate material layer 78 uses sapphire.Wherein, light-transparent substrate material layer 78 is used as photocathode base
Bottom.
Fig. 7 e is the splicing schematic diagram of the vacuum passage that one embodiment of the invention provides and photocathode, as shown in figure 7e,
Another vacuum chamber of photocathode production platform splices vacuum passage layer 76 and photocathode 77, make photocathode 77,
The seal chamber that vacuum is formed between vacuum passage layer 76 and feed strip 72, to complete the manufacture in the terahertz emission source.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: it still may be used
To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features；
And these are modified or replaceed, technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (10)
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| CN114709594A (en) * | 2022-03-18 | 2022-07-05 | 北京邮电大学 | A circularly polarized terahertz radiation source and excitation method |
| CN118825754A (en) * | 2024-06-19 | 2024-10-22 | 深圳大学 | A miniaturized terahertz radiation source based on photocathode vacuum diode array |
| CN119009629A (en) * | 2024-08-07 | 2024-11-22 | 深圳大学 | Power-adjustable miniaturized vacuum triode terahertz radiation source |
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