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CN109659396A - A kind of preparation method of middle infrared transparent P-type semiconductor film - Google Patents

A kind of preparation method of middle infrared transparent P-type semiconductor film Download PDF

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CN109659396A
CN109659396A CN201811573167.1A CN201811573167A CN109659396A CN 109659396 A CN109659396 A CN 109659396A CN 201811573167 A CN201811573167 A CN 201811573167A CN 109659396 A CN109659396 A CN 109659396A
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film
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mid
type semiconductor
infrared transparent
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CN109659396B (en
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朱嘉琦
高岗
杨磊
杨振怀
郭帅
王鹏
徐梁格
夏菲
耿方娟
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Harbin Institute of Technology Shenzhen
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Abstract

一种中红外透明P型半导体薄膜的制备方法，它涉及一种P型半导体薄膜的制备方法。本发明的目的是开发一种新型的P型中红外透明导电材料种类，解决现有LaSe2薄膜中红外透明导电薄膜制备困难，在中红外应用受到了极大地限制的技术问题。本发明：一、靶材和衬底的清洗；二、La2O3薄膜的制备；三、LaSe2薄膜的制备。本发明以单质Se粉末为Se源，利用真空封管处理，在硒化退火的条件下，Se蒸气可以将La2O3薄膜中的O置换出来的原理制备LaSe2薄膜，弥补了La与Se较高温度下不易反应的材料制备局限性。本发明制备的LaSe2薄膜具有较好的导电性能，中波红外光区的总透过率约为70％，透过性能较为良好。

A preparation method of a mid-infrared transparent P-type semiconductor thin film relates to a preparation method of a P-type semiconductor thin film. The purpose of the present invention is to develop a new type of P-type mid-infrared transparent conductive material to solve the technical problems that the existing LaSe 2 thin film mid-infrared transparent conductive film is difficult to prepare and its application in mid-infrared is greatly limited. The present invention: 1. cleaning of target material and substrate; 2. preparation of La 2 O 3 thin film; 3. preparation of LaSe 2 thin film. In the present invention, elemental Se powder is used as the Se source, and under the condition of selenization annealing, the Se vapor can replace the O in the La2O3 film by using the vacuum sealing tube treatment to prepare the LaSe2 film , which makes up the difference between La and Se. Preparation limitations of materials that are less reactive at higher temperatures. The LaSe 2 film prepared by the invention has good electrical conductivity, the total transmittance in the mid-wave infrared light region is about 70%, and the transmittance is relatively good.

Description

A kind of preparation method of middle infrared transparent P-type semiconductor film
Technical field
The present invention relates to a kind of preparation methods of P-type semiconductor film.
Background technique
Light sensation detector plays the neck such as indispensable role, such as military equipment, artificial intelligence in daily life The realization of the functions such as signal tracing, the light sensation imaging in domain is required to the participation of light sensation detector.However external electromagnetic wave, light source are believed Number intensity can seriously affect the working effect of detector so that detector detectable signal weakens, image quality and practical object There are relatively large deviations for body, or even can not effectively be imaged and feedback information.In order to reduce the interference of the outer signals such as electromagnetic wave, one As need to be coated with transparent conductive film (Transparent Conductive Films, TCFs) in detector window so that visit It surveys device window and is provided simultaneously with excellent optical transmission and forceful electric power magnetic shield performance.However, being representative with tin indium oxide (ITO) Although traditional N-type TCFs has preferable visible light-transmissive performance (> 85%) and more excellent electric property, (carrier is dense Degree: 1018~1021cm-3；Mobility: 5~100cm2·V-1·s-1), but cannot achieve N-type TCFs in infrared band (1~12 μm) transmission.Traditional N-type TCFs plasma wavelength is adjusted by regulating and controlling the electrical parameters such as carrier concentration of film, most Far also can only realize its through performance near infrared band, can not extend in infrared (3~5 μm) even long infrared Domain (8~12 μm), the TCFs of such N-type limits the use scope of the devices such as light sensation detector.Now, light sensation detector is positive Round-the-clock highly sensitive direction is developed, it usually needs has dual-purpose round the clock, the complicated electromagnetic interference signal environment of adaptation and detection is micro- The ability of weak signal etc., therefore TCFs is realized in excellent, long infrared band electrically conducting transparent characteristic just seems of crucial importance.In routine Infrared band transparent conductive material is with the intrinsic p-type CuAlO with delafossite structure2And with Cu+Based on serial copper and iron Oxide (the CuMO of mine structure2, wherein M=Al, In, Ga, Sc, Y, Cr etc.) p-type IR transparent films material based on.It is such P-type TCFs has middle infrared transmission performance preferably (~75%), but its hole concentration low (~1.3 × 1017cm-3), it cannot achieve Excellent conductance property makes light sensation detector receive extreme influence in terms of electromagnetic interference.LaSe2Film be it is a kind of it is potential in Infrared transparent conductive film, but traditional La and Se reacts to each other and prepares LaSe2Film is very difficult, thus but also LaSe2It is thin The preparation of film and middle infrared application are received and are greatly limited.
Summary of the invention
The present invention is to solve existing LaSe2Film preparation is very difficult, and middle infrared application, which receives, greatly to be limited The technical issues of, and a kind of preparation method of middle infrared transparent P-type semiconductor film is provided.
The preparation method of middle infrared transparent P-type semiconductor film of the invention carries out according to the following steps:
One, the cleaning of target and substrate:
Under conditions of ultrasonic power is 100W~300W, metal La target is sequentially placed into acetone, alcohol and deionization It is respectively washed 20min~30min in water, obtains clean La target；
Under conditions of ultrasonic power is 50W~200W, will successively it be set having a size of 10mm × 10mm × 1mm sapphire sheet It is respectively washed 10min~20min in acetone, alcohol and deionized water, obtains clean saphire substrate material；
Two, La2O3The preparation of film:
1., prepare before plated film: clean La target and clean saphire substrate material are installed, equipment is opened and is evacuated to Air pressure is 6 × 10-5Pa~4 × 10-5Pa；
2., plated film: be passed through Ar and O2It is 0.5Pa~0.6Pa to pressure, plated film power supply is radio-frequency power supply, plated film power is 50W~55W, pre-sputtering 5min~10min under conditions of pressure is 0.5Pa~0.6Pa open target baffle, are in pressure Sputter coating 60min~65min under conditions of 0.5Pa~0.6Pa；The flow of the Ar is 20sccm, O2Flow be 3sccm；
3., shutdown: close all power supplys, open vent valve, deflation opens a position, and taking out sample is La2O3Film, at this time institute Plate La2O3Film thickness is 190nm~210nm；
Three, LaSe2The preparation of film:
1., weigh the Se powder that quality is 0.01g~0.05g, be put into that diameter is 10mm and length is that the single-ended of 10cm opens In No. 1 quartz ampoule of mouth, single-ended opening is sealed with silica wool；
2., be successively coated with La for what is prepared in step 2 respectively2O3The sapphire sheet and step 3 of film 1. in be equipped with Se powder No. 1 quartz ampoule at end is put into No. 2 quartz ampoules of the single-ended opening that diameter is 18mm and length is 20cm, then to No. 2 quartz It is to 5 × 10 that pipe, which vacuumizes pressure,-3Pa~2 × 10-3After Pa, by the single-ended opening tube sealing of No. 2 quartz ampoules, so that La2O3Film It is co-located under closed vacuum environment with No. 1 quartz ampoule equipped with Se powder；
3., by No. 2 quartz ampoules of vacuum sealing as being made annealing treatment in tube furnace, annealing temperature is 600 DEG C~ 1000 DEG C, annealing time is 0.5h~4h, and the heating rate of tube furnace is 3 DEG C/min~5 DEG C/min；
4., tube furnace be naturally cooling to room temperature, opening tube furnace and taking out sample is LaSe2Film.
The present invention, for the source Se, is handled, under conditions of selenized annealing, Se steam can with simple substance Se powder using vacuum sealing tube With by La2O3The principle that O in film is cemented out prepares LaSe2Film compensates for and is not easy to react under La and Se higher temperature Material prepares limitation.
Beneficial effects of the present invention:
Present invention employs a kind of methods of simplicity to be prepared for LaSe2This p-type TCFs film, combines magnetron sputtering Membranous system and selenized annealing two ways prepare LaSe2Cost is relatively low for film, and technological operation is simple；
LaSe prepared by the present invention2Film has preferable electric conductivity, and carrier concentration maximum is up to 1019cm-3This The order of magnitude, conductivity is up to 3.69S/m；This p-type TCFs thin-film-coating on a sapphire substrate, total transmission in medium-wave infrared light area Rate is about 70%, and through performance is better.P-type LaSe2The selection of current p-type TCFs material has been widened in the discovery of thin-film material Range may advantageously facilitate the research of infrared transparent device etc. in correlation.
Detailed description of the invention
Fig. 1 is XRD diagram；
Fig. 2 is LaSe2The medium-wave infrared transmission measurement curve graph of film；
Fig. 3 is LaSe2The electrical performance testing curve graph of film.
Specific embodiment
Specific embodiment 1: present embodiment is a kind of preparation method of middle infrared transparent P-type semiconductor film, specifically It carries out according to the following steps:
One, the cleaning of target and substrate:
Under conditions of ultrasonic power is 100W~300W, metal La target is sequentially placed into acetone, alcohol and deionization It is respectively washed 20min~30min in water, obtains clean La target；
Under conditions of ultrasonic power is 50W~200W, will successively it be set having a size of 10mm × 10mm × 1mm sapphire sheet It is respectively washed 10min~20min in acetone, alcohol and deionized water, obtains clean saphire substrate material；
Two, La2O3The preparation of film:
1., prepare before plated film: clean La target and clean saphire substrate material are installed, equipment is opened and is evacuated to Air pressure is 6 × 10-5Pa~4 × 10-5Pa；
2., plated film: be passed through Ar and O2It is 0.5Pa~0.6Pa to pressure, plated film power supply is radio-frequency power supply, plated film power is 50W~55W, pre-sputtering 5min~10min under conditions of pressure is 0.5Pa~0.6Pa open target baffle, are in pressure Sputter coating 60min~65min under conditions of 0.5Pa~0.6Pa；The flow of the Ar is 20sccm, O2Flow be 3sccm；
3., shutdown: close all power supplys, open vent valve, deflation opens a position, and taking out sample is La2O3Film, at this time institute Plate La2O3Film thickness is 190nm~210nm；
Three, LaSe2The preparation of film:
1., weigh the Se powder that quality is 0.01g~0.05g, be put into that diameter is 10mm and length is that the single-ended of 10cm opens In No. 1 quartz ampoule of mouth, single-ended opening is sealed with silica wool；
2., be successively coated with La for what is prepared in step 2 respectively2O3The sapphire sheet and step 3 of film 1. in be equipped with Se powder No. 1 quartz ampoule at end is put into No. 2 quartz ampoules of the single-ended opening that diameter is 18mm and length is 20cm, then to No. 2 quartz It is to 5 × 10 that pipe, which vacuumizes pressure,-3Pa~2 × 10-3After Pa, by the single-ended opening tube sealing of No. 2 quartz ampoules, so that La2O3Film It is co-located under closed vacuum environment with No. 1 quartz ampoule equipped with Se powder；
3., by No. 2 quartz ampoules of vacuum sealing as being made annealing treatment in tube furnace, annealing temperature is 600 DEG C~ 1000 DEG C, annealing time is 0.5h~4h, and the heating rate of tube furnace is 3 DEG C/min~5 DEG C/min；
4., tube furnace be naturally cooling to room temperature, opening tube furnace and taking out sample is LaSe2Film.
Specific embodiment 2: the present embodiment is different from the first embodiment in that: 1. middle installation is clean for step 2 La target and clean saphire substrate material, opening equipment and being evacuated to air pressure is 6 × 10-5Pa.Other and specific implementation Mode one is identical.
Specific embodiment 3: the present embodiment is different from the first and the second embodiment in that: step 2 2. in be passed through Ar and O2It is 0.5Pa to pressure.Other are the same as one or two specific embodiments.
Specific embodiment 4: unlike one of present embodiment and specific embodiment one to three: step 2 2. in Sputter coating 60min under conditions of pressure is 0.5Pa.Other are identical as one of specific embodiment one to three.
Specific embodiment 5: present embodiment is unlike specific embodiment four: step 3 3. in tube furnace Heating rate is 5 DEG C/min.Other are identical as specific embodiment four.
The present invention is verified with following tests:
Test one: this test is a kind of preparation method of middle infrared transparent P-type semiconductor film, specifically according to the following steps It carries out:
One, the cleaning of target and substrate:
Under conditions of ultrasonic power is 100W, metal La target is sequentially placed into acetone, alcohol and deionized water and is divided Not Qing Xi 20min, obtain clean La target；
Under conditions of ultrasonic power is 100W, third will be sequentially placed into having a size of 10mm × 10mm × 1mm sapphire sheet It is respectively washed 10min in ketone, alcohol and deionized water, obtains clean saphire substrate material；
Two, La2O3The preparation of film:
1., prepare before plated film: clean La target and clean saphire substrate material are installed, equipment is opened and is evacuated to Air pressure is 6 × 10-5Pa；
2., plated film: be passed through Ar and O2It is 0.5Pa to pressure, plated film power supply is radio-frequency power supply, plated film power is 50W, is being pressed It is by force pre-sputtering 5min under conditions of 0.5Pa, opens target baffle, sputter coating 60min under conditions of pressure is 0.5Pa； The flow of the Ar is 20sccm, O2Flow be 3sccm；
3., shutdown: close all power supplys, open vent valve, deflation opens a position, and taking out sample is La2O3Film, at this time institute Plate La2O3Film thickness is 200nm；
Three, LaSe2The preparation of film:
1., weigh quality be 0.03g Se powder, be put into No. 1 of the single-ended opening that diameter is 10mm and length is 10cm In quartz ampoule, single-ended opening is sealed with silica wool；
2., be successively coated with La for what is prepared in step 2 respectively2O3The sapphire sheet and step 3 of film 1. in be equipped with Se powder No. 1 quartz ampoule at end is put into No. 2 quartz ampoules of the single-ended opening that diameter is 18mm and length is 20cm, then to No. 2 quartz It is to 3 × 10 that pipe, which vacuumizes pressure,-3After Pa, by the single-ended opening tube sealing of No. 2 quartz ampoules, so that La2O3Film and be equipped with Se powder No. 1 quartz ampoule at end is co-located under closed vacuum environment；
3., by No. 2 quartz ampoules of vacuum sealing as being made annealing treatment in tube furnace, annealing temperature is 800 DEG C, annealing Time is 1h, and the heating rate of tube furnace is 5 DEG C/min；
4., tube furnace be naturally cooling to room temperature, opening tube furnace and taking out sample is LaSe2Film.
Fig. 1 is XRD diagram, and top is the LaSe for testing a preparation2Film, lower section are the LaSe of monoclinic phase2PDF#75- 2270 curves, as seen in Figure 1, the film of one preparation of test is the LaSe of monoclinic phase2。
Test two: this test with test one unlike: step 3 3. in annealing temperature be 600 DEG C, it is other and test One is identical.
Test three: this test with test one unlike: step 3 3. in annealing temperature be 700 DEG C, it is other and test One is identical.
Test four: this test with test one unlike: step 3 3. in annealing temperature be 900 DEG C, it is other and test One is identical.
Test five: this test with test one unlike: step 3 3. in annealing temperature be 1000 DEG C, it is other and test One is identical.
Fig. 2 is LaSe2The medium-wave infrared transmission measurement curve graph of film, curve a are the LaSe for testing two preparations2Film, The LaSe of three preparation of curve b test2Film, curve c are the LaSe for testing a preparation2Film, it can be seen from the figure that with selenium The increase of annealing temperature, LaSe2Downward trend after first increase is presented in the medium-wave infrared transmitance of film, has at 700 DEG C Having highest transmitance is about 78%.
Fig. 3 is LaSe2The electrical performance testing curve graph of film, curve 1 are carrier concentration curve, and curve 2 is conductance Rate curve, the electric property of film presents with the raising of selenized annealing temperature and first improves becoming of declining afterwards as seen in Figure 3 Gesture, in 800 DEG C of annealing, film has optimal electric property, and film carrier concentration reaches 1.179 × 10 at this time19cm-3, Conductivity is 3.69S/cm.

Claims (5)

1.一种中红外透明P型半导体薄膜的制备方法，其特征在于中红外透明P型半导体薄膜的制备方法是按以下步骤进行的：1. a preparation method of mid-infrared transparent P-type semiconductor film, is characterized in that the preparation method of mid-infrared transparent P-type semiconductor film is carried out according to the following steps: 一、靶材和衬底的清洗：1. Cleaning of target and substrate: 在超声功率为100W～300W的条件下，将金属La靶材依次置于丙酮、酒精和去离子水中分别清洗20min～30min，得到干净的La靶材；Under the condition of ultrasonic power of 100W-300W, the metal La target was placed in acetone, alcohol and deionized water for cleaning for 20min-30min respectively, to obtain a clean La target; 在超声功率为50W～200W的条件下，将尺寸为10mm×10mm×1mm的蓝宝石片依次置于丙酮、酒精和去离子水中分别清洗10min～20min，得到洁净的蓝宝石衬底材料；Under the condition of ultrasonic power of 50W～200W, the sapphire sheet with the size of 10mm×10mm×1mm is placed in acetone, alcohol and deionized water for cleaning for 10min～20min respectively to obtain a clean sapphire substrate material; 二、La2O3薄膜的制备：2. Preparation of La 2 O 3 film: ①、镀膜前准备：安装干净的La靶材和洁净的蓝宝石衬底材料，开启设备抽真空至气压为6×10-5Pa～4×10-5Pa；①, Preparation before coating: install clean La target and clean sapphire substrate material, turn on the equipment and vacuumize until the air pressure is 6×10 -5 Pa～4×10 -5 Pa; ②、镀膜：通入Ar和O2至压强为0.5Pa～0.6Pa，镀膜电源为射频电源、镀膜功率为50W～55W，在压强为0.5Pa～0.6Pa的条件下预溅射5min～10min，打开靶材挡板，在压强为0.5Pa～0.6Pa的条件下溅射镀膜60min～65min；所述的Ar的流量为20sccm，O2的流量为3sccm；②, Coating: pass Ar and O 2 until the pressure is 0.5Pa ~ 0.6Pa, the coating power supply is radio frequency power supply, the coating power is 50W ~ 55W, and the pressure is 0.5Pa ~ 0.6Pa under the condition of pre-sputtering for 5min ~ 10min, Open the target baffle, sputter coating for 60min-65min under the pressure of 0.5Pa～0.6Pa; the flow rate of Ar is 20sccm, and the flow rate of O 2 is 3sccm; ③、关机：关闭所有电源，打开放气阀，放气开仓，取出样品即为La2O3薄膜，此时所镀La2O3薄膜厚度为190nm～210nm；③. Shutdown: Turn off all power supplies, open the vent valve, open the warehouse with air release, and take out the sample, which is the La 2 O 3 film, and the thickness of the La 2 O 3 film plated at this time is 190nm ~ 210nm; 三、LaSe2薄膜的制备：3. Preparation of LaSe 2 thin films: ①、称取质量为0.01g～0.05g的Se粉末，放入直径为10mm和长度为10cm的单端开口的1号石英管内，用石英棉封住单端开口；①. Weigh Se powder with a mass of 0.01g to 0.05g, put it into a No. 1 quartz tube with a diameter of 10mm and a single-end opening of 10cm, and seal the single-end opening with quartz wool; ②、先后分别将步骤二中制备的镀有La2O3薄膜的蓝宝石片和步骤三①中装有Se粉末的1号石英管放入直径为18mm和长度为20cm的单端开口的2号石英管内，然后对2号石英管抽真空压强为至5×10-3Pa～2×10-3Pa后，将2号石英管的单端开口封管，使得La2O3薄膜和装有Se粉末的1号石英管共同处于密闭的真空环境下；②, successively put the sapphire sheet plated with the La 2 O 3 film prepared in step 2 and the No. 1 quartz tube containing Se powder in step 3 ① into the No. 2 single-ended opening with a diameter of 18 mm and a length of 20 cm. Inside the quartz tube, vacuum the No. 2 quartz tube to a pressure of 5 × 10 -3 Pa to 2 × 10 -3 Pa, and seal the single-end opening of the No. 2 quartz tube, so that the La 2 O 3 film and the Se The No. 1 quartz tube of the powder is in a closed vacuum environment together; ③、将真空封闭的2号石英管至于管式炉中进行退火处理，退火温度为600℃～1000℃，退火时间为0.5h～4h，管式炉的升温速率为3℃/min～5℃/min；③. The vacuum-sealed No. 2 quartz tube is annealed in a tube furnace. The annealing temperature is 600℃～1000℃, the annealing time is 0.5h～4h, and the heating rate of the tube furnace is 3℃/min～5℃ /min; ④、管式炉自然降温至室温，打开管式炉取出样品即为LaSe2薄膜。④. The tube furnace is naturally cooled to room temperature, and the sample is taken out by opening the tube furnace, which is the LaSe 2 film. 2.根据权利要求1所述的一种中红外透明P型半导体薄膜的制备方法，其特征在于步骤二①中安装干净的La靶材和洁净的蓝宝石衬底材料，开启设备抽真空至气压为6×10-5Pa。2. the preparation method of a kind of mid-infrared transparent P-type semiconductor film according to claim 1, it is characterized in that in step 2 1., install clean La target material and clean sapphire substrate material, open equipment vacuumize to air pressure for 6×10 -5Pa . 3.根据权利要求1所述的一种中红外透明P型半导体薄膜的制备方法，其特征在于步骤二②中通入Ar和O2至压强为0.5Pa。3. The preparation method of a mid-infrared transparent P-type semiconductor thin film according to claim 1, characterized in that in step 2 ( 2 ), Ar and O are introduced to a pressure of 0.5Pa. 4.根据权利要求1所述的一种中红外透明P型半导体薄膜的制备方法，其特征在于步骤二②中在压强为0.5Pa的条件下溅射镀膜60min。4. the preparation method of a kind of mid-infrared transparent P-type semiconductor thin film according to claim 1, is characterized in that in step 2 ②, under the condition that pressure is 0.5Pa, sputter coating 60min. 5.根据权利要求1所述的一种中红外透明P型半导体薄膜的制备方法，其特征在于步骤三③中管式炉的升温速率为5℃/min。5. the preparation method of a kind of mid-infrared transparent P-type semiconductor thin film according to claim 1, is characterized in that the heating rate of the tube furnace in step 3 ③ is 5 ℃/min.
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US20020041968A1 (en) * 2000-10-05 2002-04-11 Nissan Motor Co., Ltd. Infrared transmitting film and infrared-sensor cover using same
CN105063565A (en) * 2015-08-31 2015-11-18 哈尔滨工业大学 Method for preparing P-type infrared transparent conductive oxide film
CN108149210A (en) * 2017-12-26 2018-06-12 哈尔滨工业大学 A kind of preparation method of LONG WAVE INFRARED anti-reflection protective film
CN108470782A (en) * 2018-03-09 2018-08-31 哈尔滨工业大学 A kind of middle infrared transparent conductive p-type oxide film material and preparation method thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020041968A1 (en) * 2000-10-05 2002-04-11 Nissan Motor Co., Ltd. Infrared transmitting film and infrared-sensor cover using same
CN105063565A (en) * 2015-08-31 2015-11-18 哈尔滨工业大学 Method for preparing P-type infrared transparent conductive oxide film
CN108149210A (en) * 2017-12-26 2018-06-12 哈尔滨工业大学 A kind of preparation method of LONG WAVE INFRARED anti-reflection protective film
CN108470782A (en) * 2018-03-09 2018-08-31 哈尔滨工业大学 A kind of middle infrared transparent conductive p-type oxide film material and preparation method thereof

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