CN109659362A - A kind of structure and preparation method thereof based on the low ohm contact resistance of gallium nitride power HEMT structure - Google Patents
A kind of structure and preparation method thereof based on the low ohm contact resistance of gallium nitride power HEMT structure Download PDFInfo
- Publication number
- CN109659362A CN109659362A CN201811384305.1A CN201811384305A CN109659362A CN 109659362 A CN109659362 A CN 109659362A CN 201811384305 A CN201811384305 A CN 201811384305A CN 109659362 A CN109659362 A CN 109659362A
- Authority
- CN
- China
- Prior art keywords
- gallium nitride
- layer
- contact resistance
- ohm contact
- power hemt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 79
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 238000002360 preparation method Methods 0.000 title description 3
- 230000004888 barrier function Effects 0.000 claims abstract description 18
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 4
- 239000010936 titanium Substances 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 239000010931 gold Substances 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 19
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- 239000010408 film Substances 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 13
- 150000004767 nitrides Chemical class 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 238000005566 electron beam evaporation Methods 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 238000007740 vapor deposition Methods 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000004377 microelectronic Methods 0.000 abstract description 3
- 230000006911 nucleation Effects 0.000 abstract description 2
- 238000010899 nucleation Methods 0.000 abstract description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract 1
- 238000003780 insertion Methods 0.000 abstract 1
- 230000037431 insertion Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 69
- 229910002704 AlGaN Inorganic materials 0.000 description 22
- 238000005516 engineering process Methods 0.000 description 19
- 238000004140 cleaning Methods 0.000 description 15
- 238000005406 washing Methods 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 238000009413 insulation Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000003763 carbonization Methods 0.000 description 3
- 238000005234 chemical deposition Methods 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
- H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
一种基于氮化镓功率HEMT结构低欧姆接触电阻的结构及其制作方法，属于微电子技术领域，包括衬底、低温氮化镓成核层、氮化镓缓冲层、氮化镓沟道层、氮化铝插入层、铝镓氮势垒层、漏电极、源电极、栅电极和介质层，其中漏电极和源电极分居栅电极的两端，栅电极与铝镓氮势垒层之间还设有介质层，在氮化镓沟道层与铝镓氮势垒层之间形成二维电子气沟道，本发明制造工艺简单，重复性好，适用于GaN基功率HEMT器件应用。
A low-ohmic contact resistance structure based on a gallium nitride power HEMT structure and a manufacturing method thereof belong to the technical field of microelectronics, and include a substrate, a low-temperature gallium nitride nucleation layer, a gallium nitride buffer layer, and a gallium nitride channel layer , an aluminum nitride insertion layer, an aluminum gallium nitride barrier layer, a drain electrode, a source electrode, a gate electrode and a dielectric layer, wherein the drain electrode and the source electrode are separated at both ends of the gate electrode, and between the gate electrode and the aluminum gallium nitride barrier layer A dielectric layer is also provided to form a two-dimensional electron gas channel between the gallium nitride channel layer and the aluminum gallium nitrogen barrier layer.
Description
Technical field
The invention belongs to microelectronics technology, specifically a kind of nitrogen based on Sn/Ti/Al/Ti/Au composite construction
Change the production method of gallium HEMT low resistance Ohmic contact, the device of preparation can be used for high-power application.
Background technique
Third generation semiconductor material, that is, broad stopband (Wide Band Gap Semiconductor, abbreviation WBGS) semiconductor
Material is grown up after first generation silicon, germanium and second generation GaAs, indium phosphide etc..In third generation semiconductor material,
Gallium nitride (GaN) have broad-band gap, direct band gap, high breakdown electric field, lower dielectric constant, high electronics saturation drift velocity,
Capability of resistance to radiation by force and the superior property such as good chemical stability, becomes and manufactures the micro- electricity of a new generation after germanium, silicon, GaAs
The key semiconductor material of sub- device and circuit.Especially high temperature, high-power, high frequency and Flouride-resistani acid phesphatase electronic device and all-wave
There is advantageous advantage in terms of long and short wavelength photoelectric device, be to realize high temperature and high-power, high frequency and anti-radiation, all-wave
The ideal material of long photoelectric device, be the new and high technologies such as microelectronics, power electronics, photoelectron and national defense industry, information industry,
The pillar industries such as mechanical and electrical industry and energy industry, which enter after 21 century to rely, continues the key basic material of development.
GaN base HEMT device is on the hetero-junctions that can form two-dimensional electron gas (2DEG) with metalloid semiconductcor field effect
The technique of transistor (MESFET) is answered to be fabricated to, the main conductance between source and drain is provided by 2DEG conducting channel, then by
Schottky gate in AlGaN potential barrier is biased to change the thickness of depletion region, to control the concentration and device of channel 2DEG
The working condition of part." the power GaN: extension, device, application and technology issued according to YoleD é veloppement company's last year
Trend -2017 editions " report, 2016, Global Power GaN market scale had reached 14,000,000 dollars.Power GaN technology with
It is estimated in a short time to show huge market potential by means of its high-performance and high frequency solution applicability.
Summary of the invention
It is an object of the invention to be directed to the difficult point of the high ohmic contact resistance of gallium nitride HEMT power device, from device technology
The optimization angle of preparation process proposes the gallium nitride HEMT low resistance Ohmic contact based on Sn/Ti/Al/Ti/Au composite construction
Production method improves the performance of HEMT device to reduce ohmic contact resistance.
To achieve the above object, each layer of device architecture of the invention is successively arranged from bottom to up, including substrate, low temperature nitride
Gallium nucleating layer, nitride buffer layer, gallium nitride channel layer, aln inserting layer, aluminum gallium nitride barrier layer, drain electrode, source electrode, grid
Electrode and dielectric layer, wherein the both ends of drain electrode and source electrode separation gate electrode, also set between gate electrode and aluminum gallium nitride barrier layer
There is dielectric layer, forms Two-dimensional electron gas channel between aln inserting layer and aluminum gallium nitride barrier layer.
Preferably, the substrate is all material that can be used to epitaxial nitride gallium film, including insulation or semi-insulated
The materials such as sapphire, silicon, silicon carbide, gallium nitride and diamond.
Preferably, low temperature nitride gallium nucleating layer, 400-700 DEG C of growth temperature, film thickness 10-50nm, for being subsequent
Nitride buffer layer growth provide nucleation node, improve gallium nitride film crystalline quality.
Preferably, the nitride buffer layer, to use metal organic source chemical vapor deposition (MOCVD) or other methods
The gallium nitride film layer that unintentional doped growing is formed, film thickness range are 100nm-10um.Its quality directly affects then
The quality of the hetero-junctions of growth, the various lattice defects in the region can also trapped electron, to influence the density of 2DEG.
Preferably, what is formed at the gallium nitride channel layer, aluminum gallium nitride insert layer and AlGaN barrier functions bed boundary is highly concentrated
Spend the channel of 2DEG.
Preferably, the drain electrode and source electrode are closed using tin/titanium/aluminium/titanium/gold (Sn/Ti/Al/Ti/Au) multilayer
Gold.Tin metal layer forms N-type heavy doping with a thickness of 1-20nm, reduces ohmic contact resistance.
Preferably, the gate electrode is conventional Schottky contacts or metal-dielertric-semiconductor structure.
Preferably, the insulating medium layer is SiNxOr SiO2Thin-film material is straight with gate electrode for completely cutting off AlGaN
Contact reduces grid leak electricity, improves device electric breakdown strength.
Preferably, Ohmic contact refers to contact of the Sn/Ti/Al/Ti/Au alloy with AlGaN/GaN, the resistance of contact surface
Value is much smaller than the resistance of semiconductor itself, will not generate apparent additional impedance, will not make inside AlGaN/GaN hetero-junctions
Significant change occurs for equilibrium carrier concentration.When device works, most voltage drop is at behaviour area (Active region)
Without the C-V characteristic in contact surface, during will not influence.In high frequency and high power device, Ohmic contact is to design and manufacture
One of critical issue.
The Ohmic contact is prepared on the principle AlGaN/GaN hetero-junctions using tunnel-effect.Metal and
When semiconductor contact, if doping content of semiconductor is very high, potential barrier sector width can be thinning, and ohmic contact resistance becomes smaller, and electronics is very
It is easy to generate tunnel current by tunnel-effect.Its contact resistance size is defined by formula 1:
Wherein, mn *Indicate that electron effective mass, ε indicate dielectric constant, NDIndicate doping concentration.It can be seen from formula 1
Doping concentration is higher, contact resistance RcSmaller, present invention introduces Sn metal, the first purpose is to improve AlGaN/GaN hetero-junctions
The electron adulterated concentration of the N-type on surface.
The ohmic contact resistance generally uses transmission line model (Transmission Line Model:TLM) to carry out
Measurement.Table top is formed by etachable material surface, is fabricated to a series of a length of W linearly arranged, the rectangular metal electricity that width is d
Pole.A different spacing is all corresponding between every two adjacent electrode, all-in resistance R consists of two parts:
Wherein, Rc is contact resistance size, RSHFor the square resistance of material, L is the spacing of adjacent two electrode.
Preferably, the Schottky contacts refer to contact of the alloys such as Ni/Au with AlGaN/GaN, since the two combines
Contact berrier is higher afterwards, forms Schottky contacts.
Preferably, the Sn/Ti/Al/Ti/Au alloy is prepared using electron beam evaporation method, successively sputter Sn,
Five kinds of materials of Ti, Al, Ti, Au form multiple layer metal, finally form alloy by high annealing.
Preferably, the Ti/Al/Ti/Au is as traditional alloying metal, and wherein Al is natural Ohmic contact material
Material, basic work function is low, using affected for main material；First layer Ti can form TiN, while shape with bottom AlGaN/GaN
At a large amount of vacancy N for playing n-type doping, contact resistance is reduced；Protective layer of the Au as top layer, protects alloy not by air oxygen
Change；Second layer Ti prevents Au from permeating downwards as barrier layer.
Preferably, the Sn is formed with bottom AlGaN/GaN phase separation as the film layer deposited at first and is largely played n
The vacancy N of type doping, reduces contact berrier.
Preferably, the high-temperature annealing process, temperature range are 300 DEG C -1000 DEG C, annealing time 5-300s.
Preferably, the ohmic contact resistance is capable of mutual conductance and the saturation current of effective influence HEMT device.Ohm
Contact resistance is lower, and the mutual conductance of device is higher, and saturation current is bigger, and the electrical characteristics of device are better.
Preferably, the Sn metal layer with a thickness of 3nm, 5nm or 8nm.
Compared with prior art, the invention has the advantages that and technical effect:
The device is a kind of HEMT devices of GaN base, the Ohmic contact formed using this method,
For contact resistance lower than the state of the art (reducing by 0.2 Ω .cm or so), the conducting resistance of device can decline 10%-20%, mutual conductance
Increase 5%-15%, and manufacturing process is simple, reproducible feature.In combination with the original high threshold electricity of device HEMT
Pressure, high-breakdown-voltage, high current density and excellent pinch-off behavior are suitable for high-power electronic device applications.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention.
Wherein: 101- substrate, 102- nucleating layer, 103- buffer layer, 104- channel layer, 105- insert layer, 106- aluminum gallium nitride
Barrier layer, 107- drain electrode, 108- source electrode, 109- gate electrode, 110- Two-dimensional electron gas channel, 111- dielectric layer.
Specific embodiment
To be easy to understand the technical means, the creative features, the aims and the efficiencies achieved by the present invention, below with reference to
Specific embodiment, the present invention is further explained.
Each layer of device architecture of the invention is successively arranged from bottom to up, comprising: substrate 101, low temperature nitride gallium nucleating layer
102, nitride buffer layer 103, gallium nitride channel layer 104, aln inserting layer 105, aluminum gallium nitride barrier layer 106, drain electrode
107, source electrode 108, gate electrode 109 and dielectric layer 111, wherein drain electrode 107 and source electrode 108 are lived apart the two of gate electrode 109
End, is additionally provided with dielectric layer 111, in aln inserting layer 105 and aluminum gallium nitride gesture between gate electrode 109 and aluminum gallium nitride barrier layer 106
Two-dimensional electron gas channel 110 is formed between barrier layer 106.Device architecture of the invention is prepared by the following method:
Embodiment 1
(1) use MOCVD technology and equipment in the substrate insulation or semi-insulated sapphire, silicon, carbonization of 6inch size
The materials such as silicon, gallium nitride, zinc oxide and diamond carry out AlGaN/GaN heterogenous junction epitaxy.The technology is general traditional technology,
AlGaN/GaN heterojunction structure successively includes GaN buffer layer 102, low temperature GaN nucleating layer 103, GaN channel layer 104, AlGaN gesture
Build the Two-dimensional electron gas channel 110 of the high concentration 2DEG of functional layer 105 and interface formation.
(2) it is deposited using plasma-reinforced chemical deposition method (PECVD) on above-mentioned AlGaN/GaN heterojunction material surface
Layer of sin x film layer is as dielectric layer, with a thickness of 100nm.
(3) above-mentioned material for obtaining step (2) carries out organic washing, will using lithography and etching technology after cleaning
The thin film dielectric layer at hetero-junctions both ends is dispelled, remaining place retains photoresist coating, forms source-drain electrode groove.
(4) by step (3) obtain above-mentioned material carry out organic washing, after cleaning using electron beam evaporation technique into
Row metal deposition.Tin (Sn), titanium (Ti), aluminium (Al), titanium (Ti) and golden (Au) five kinds of metals are sequentially depositing, wherein x value is
10%, the thickness of five layers of metal layer is respectively 3nm, 20nm, 1500nm, 30nm and 100nm.Metal-stripping is used after vapor deposition
Equipment dispels the multiple layer metal above photoresist, forms the figure for only having above-mentioned hetero-junctions both ends just to there is the multiple layer metal
Case.
(5) above-mentioned material for obtaining step (4) carries out organic washing, carries out at annealing after cleaning to above-mentioned material
Reason, annealing temperature are 830 DEG C, annealing time 30s.
(6) above-mentioned material for obtaining step (5) carries out organic washing, will using lithography and etching technology after cleaning
Thin film dielectric layer among hetero-junctions is dispelled, remaining place retains photoresist coating, forms gate electrode groove.
(7) by step (6) obtain above-mentioned material carry out organic washing, after cleaning using electron beam evaporation technique into
Row metal deposition.It is sequentially depositing nickel (Ni), platinum (Pt), golden (Au) and four kinds of metals of titanium (Ti), thickness difference 15nm, 20nm,
5000nm and 5nm.The multiple layer metal above photoresist is dispelled using metal-stripping equipment after vapor deposition, formation only has
Among above-mentioned hetero-junctions just there is the pattern of the multiple layer metal in gate electrode position.
Embodiment 2
(1) use MOCVD technology and equipment in the substrate insulation or semi-insulated sapphire, silicon, carbonization of 6inch size
The materials such as silicon, gallium nitride, zinc oxide and diamond carry out AlGaN/GaN heterogenous junction epitaxy.The technology is general traditional technology,
AlGaN/GaN heterojunction structure successively includes GaN buffer layer 102, low temperature GaN nucleating layer 103, GaN channel layer 104, AlGaN gesture
Build the channel 110 of the high concentration 2DEG of functional layer 105 and interface formation.
(2) it is deposited using plasma-reinforced chemical deposition method (PECVD) on above-mentioned AlGaN/GaN heterojunction material surface
Layer of sin x film layer is as dielectric layer, with a thickness of 150nm.
(3) above-mentioned material for obtaining step (2) carries out organic washing, will using lithography and etching technology after cleaning
The thin film dielectric layer at hetero-junctions both ends is dispelled, remaining place retains photoresist coating, forms source-drain electrode groove.
(4) by step (3) obtain above-mentioned material carry out organic washing, after cleaning using electron beam evaporation technique into
Row metal deposition.Tin (Sn), titanium (Ti), aluminium (Al), titanium (Ti) and golden (Au) five kinds of metals are sequentially depositing, wherein x value is
10%, the thickness of five layers of metal layer is respectively 5nm, 20nm, 1500nm, 30nm and 100nm.Metal-stripping is used after vapor deposition
Equipment dispels the multiple layer metal above photoresist, forms the figure for only having above-mentioned hetero-junctions both ends just to there is the multiple layer metal
Case.
(5) above-mentioned material for obtaining step (4) carries out organic washing, carries out at annealing after cleaning to above-mentioned material
Reason, annealing temperature are 830 DEG C, annealing time 30s.
(6) above-mentioned material for obtaining step (5) carries out organic washing, will using lithography and etching technology after cleaning
Thin film dielectric layer among hetero-junctions is removed, remaining place retains photoresist coating, forms gate electrode groove.
(7) by step (6) obtain above-mentioned material carry out organic washing, after cleaning using electron beam evaporation technique into
Row metal deposition.It is sequentially depositing nickel (Ni), platinum (Pt), golden (Au) and four kinds of metals of titanium (Ti), thickness difference 15nm, 20nm,
5000nm and 5nm.The multiple layer metal above photoresist is dispelled using metal-stripping equipment after vapor deposition, formation only has
Among above-mentioned hetero-junctions just there is the pattern of the multiple layer metal in gate electrode position.
Embodiment 3
(1) use MOCVD technology and equipment in the substrate insulation or semi-insulated sapphire, silicon, carbonization of 6inch size
The materials such as silicon, gallium nitride, zinc oxide and diamond carry out AlGaN/GaN heterogenous junction epitaxy.The technology is general traditional technology,
AlGaN/GaN heterojunction structure successively includes GaN buffer layer 102, low temperature GaN nucleating layer 103, GaN channel layer 104, AlGaN gesture
Build the Two-dimensional electron gas channel 110 of the high concentration 2DEG of functional layer 105 and interface formation.
(2) it is deposited using plasma-reinforced chemical deposition method (PECVD) on above-mentioned AlGaN/GaN heterojunction material surface
Layer of sin x film layer is as dielectric layer, with a thickness of 150nm.
(3) above-mentioned material for obtaining step (2) carries out organic washing, will using lithography and etching technology after cleaning
The thin film dielectric layer at hetero-junctions both ends is dispelled, remaining place retains photoresist coating, forms source-drain electrode groove.
(4) by step (3) obtain above-mentioned material carry out organic washing, after cleaning using electron beam evaporation technique into
Row metal deposition.Tin (Sn), titanium (Ti), aluminium (Al), titanium (Ti) and golden (Au) five kinds of metals are sequentially depositing, wherein x value is
10%, the thickness of five layers of metal layer is respectively 8nm, 20nm, 1500nm, 30nm and 100nm.Metal-stripping is used after vapor deposition
Equipment dispels the multiple layer metal above photoresist, forms the figure for only having above-mentioned hetero-junctions both ends just to there is the multiple layer metal
Case.
(5) above-mentioned material for obtaining step (4) carries out organic washing, carries out at annealing after cleaning to above-mentioned material
Reason, annealing temperature are 830 DEG C, annealing time 30s.
(6) above-mentioned material for obtaining step (5) carries out organic washing, will using lithography and etching technology after cleaning
Thin film dielectric layer among hetero-junctions is dispelled, remaining place retains photoresist coating, forms gate electrode groove.
(7) by step (6) obtain above-mentioned material carry out organic washing, after cleaning using electron beam evaporation technique into
Row metal deposition.It is sequentially depositing nickel (Ni), platinum (Pt), golden (Au) and four kinds of metals of titanium (Ti), thickness difference 15nm, 20nm,
5000nm and 5nm.The multiple layer metal above photoresist is dispelled using metal-stripping equipment after vapor deposition, formation only has
Among above-mentioned hetero-junctions just there is the pattern of the multiple layer metal in gate electrode position.
As known by the technical knowledge, the present invention can pass through the embodiment party of other essence without departing from its spirit or essential feature
Case is realized.Therefore, embodiment disclosed above, in all respects are merely illustrative, not the only.Institute
Have within the scope of the present invention or is included in the invention in the change being equal in the scope of the present invention.
Claims (10)
1. a kind of structure based on the low ohm contact resistance of gallium nitride power HEMT structure, which is characterized in that including substrate
(101), low temperature nitride gallium nucleating layer (102), nitride buffer layer (103), gallium nitride channel layer (104), aln inserting layer
(105), aluminum gallium nitride barrier layer (106), the drain electrode (107) at both ends of living apart and the grid electricity among source electrode (108) and the two
Pole (109), above layers are successively arranged from bottom to up, are additionally provided with medium between gate electrode (109) and aluminum gallium nitride barrier layer (106)
Layer (111).
2. a kind of structure based on the low ohm contact resistance of gallium nitride power HEMT structure according to claim 1, special
Sign is that the material of substrate is any one in silicon, silicon carbide, gallium nitride and diamond.
3. a kind of structure based on the low ohm contact resistance of gallium nitride power HEMT structure according to claim 1, special
Sign is, 400-700 DEG C of growth temperature of the low temperature nitride gallium nucleating layer (102), film thickness 10-50nm.
4. a kind of structure based on the low ohm contact resistance of gallium nitride power HEMT structure according to claim 1, special
Sign is that the nitride buffer layer (103) deposits the partly exhausted of unintentional doped growing formation using metal organic vapor
The gallium nitride film layer of edge high quality, film thickness range are 100nm-10um.
5. a kind of structure based on the low ohm contact resistance of gallium nitride power HEMT structure according to claim 1, special
Sign is that the gallium nitride channel layer (104) deposits the partly exhausted of unintentional doped growing formation using metal organic vapor
The gallium nitride channel thin-film layer of edge high quality, film thickness range are 50-200nm.
6. a kind of structure based on the low ohm contact resistance of gallium nitride power HEMT structure according to claim 1, special
Sign is that the aln inserting layer (105) uses the semi-insulating high quality nitrogen of metal organic vapor deposition growing formation
Change aluminium film insert layer, film thickness range is 1-5nm.
7. a kind of structure based on the low ohm contact resistance of gallium nitride power HEMT structure according to claim 1, special
Sign is that the structural formula of the aluminum gallium nitride barrier layer (106) is AlxGa1-xN, wherein 0 < x < 1, with a thickness of 5-35nm.
8. a kind of structure based on the low ohm contact resistance of gallium nitride power HEMT structure according to claim 1, special
Sign is that the drain electrode (107) and source electrode (108) of top two sides are all made of tin/titanium/aluminium/titanium/gold multilayer alloy, wherein tin
Metal layer and aluminum gallium nitride barrier layer form N-type heavy doping, and tin metal layer is with a thickness of 2-10nm, drain electrode (107) and source electrode
It (108) is prepared using the method for electron beam evaporation.
9. a kind of structure based on the low ohm contact resistance of gallium nitride power HEMT structure according to claim 8, special
Sign is that tin/titanium/aluminium/titanium/gold multilayer alloy and the Ohmic contact method of aluminum gallium nitride barrier layer (106) are as follows:
In a nitrogen environment, by 600 DEG C -1000 DEG C of the thermal annealing process of 15-180s time, make tin/titanium/aluminium/titanium/gold
Multilayer alloy and aluminum gallium nitride barrier layer (106) form Ohmic contact.
10. a kind of structure based on the low ohm contact resistance of gallium nitride power HEMT structure according to claim 1, special
Sign is that the gate electrode (109) is Schottky junction structure or metal-dielertric-semiconductor structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811384305.1A CN109659362A (en) | 2018-11-20 | 2018-11-20 | A kind of structure and preparation method thereof based on the low ohm contact resistance of gallium nitride power HEMT structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811384305.1A CN109659362A (en) | 2018-11-20 | 2018-11-20 | A kind of structure and preparation method thereof based on the low ohm contact resistance of gallium nitride power HEMT structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109659362A true CN109659362A (en) | 2019-04-19 |
Family
ID=66111417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811384305.1A Pending CN109659362A (en) | 2018-11-20 | 2018-11-20 | A kind of structure and preparation method thereof based on the low ohm contact resistance of gallium nitride power HEMT structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109659362A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110867488A (en) * | 2019-11-28 | 2020-03-06 | 西安电子科技大学芜湖研究院 | Gallium nitride HEMT device structure and preparation method thereof |
| CN112466770A (en) * | 2020-11-20 | 2021-03-09 | 西安电子科技大学 | Heterojunction device-based hot electron effect test structure and characterization method |
| CN114038750A (en) * | 2021-11-05 | 2022-02-11 | 西安电子科技大学芜湖研究院 | A kind of preparation method of gallium nitride power device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1728349A (en) * | 2004-07-28 | 2006-02-01 | 中国科学院半导体研究所 | The manufacture method of aluminum-gallium-nitrogen/gallium nitride transistor with high electron mobility |
| US20070158683A1 (en) * | 2005-12-13 | 2007-07-12 | Sheppard Scott T | Semiconductor devices including implanted regions and protective layers and methods of forming the same |
| CN101107713A (en) * | 2004-11-23 | 2008-01-16 | 克里公司 | Capping layer and/or passivation layer of nitride-based transistor, transistor structure and manufacturing method |
| CN103928511A (en) * | 2014-04-16 | 2014-07-16 | 中国电子科技集团公司第十三研究所 | An Ohmic Contact System for GaN Devices |
| CN105789047A (en) * | 2016-05-13 | 2016-07-20 | 中国科学院半导体研究所 | Preparation method of enhanced AlGaN/GaN high-electron mobility transistor |
-
2018
- 2018-11-20 CN CN201811384305.1A patent/CN109659362A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1728349A (en) * | 2004-07-28 | 2006-02-01 | 中国科学院半导体研究所 | The manufacture method of aluminum-gallium-nitrogen/gallium nitride transistor with high electron mobility |
| CN101107713A (en) * | 2004-11-23 | 2008-01-16 | 克里公司 | Capping layer and/or passivation layer of nitride-based transistor, transistor structure and manufacturing method |
| US20070158683A1 (en) * | 2005-12-13 | 2007-07-12 | Sheppard Scott T | Semiconductor devices including implanted regions and protective layers and methods of forming the same |
| CN103928511A (en) * | 2014-04-16 | 2014-07-16 | 中国电子科技集团公司第十三研究所 | An Ohmic Contact System for GaN Devices |
| CN105789047A (en) * | 2016-05-13 | 2016-07-20 | 中国科学院半导体研究所 | Preparation method of enhanced AlGaN/GaN high-electron mobility transistor |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110867488A (en) * | 2019-11-28 | 2020-03-06 | 西安电子科技大学芜湖研究院 | Gallium nitride HEMT device structure and preparation method thereof |
| CN112466770A (en) * | 2020-11-20 | 2021-03-09 | 西安电子科技大学 | Heterojunction device-based hot electron effect test structure and characterization method |
| CN112466770B (en) * | 2020-11-20 | 2024-05-07 | 西安电子科技大学 | Test structure and characterization method based on hot electron effect of heterojunction device |
| CN114038750A (en) * | 2021-11-05 | 2022-02-11 | 西安电子科技大学芜湖研究院 | A kind of preparation method of gallium nitride power device |
| CN114038750B (en) * | 2021-11-05 | 2022-12-02 | 西安电子科技大学芜湖研究院 | Preparation method of gallium nitride power device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN208861993U (en) | Normally-off High Electron Mobility Transistor | |
| Higashiwaki et al. | AlGaN/GaN heterostructure field-effect transistors on 4H-SiC substrates with current-gain cutoff frequency of 190 GHz | |
| CN101916773B (en) | Double-channel MOS-HEMT (Metal Oxide Semiconductor-High Electron Mobility Transistor) device and manufacturing method | |
| CN107946358A (en) | An AlGaN/GaN heterojunction HEMT device compatible with Si-CMOS process and its manufacturing method | |
| CN104465748B (en) | A kind of enhanced HEMT device of GaN base and preparation method thereof | |
| CN107680998A (en) | A kind of GaN base p-type grid HFET devices and preparation method thereof | |
| CN109638071A (en) | A kind of structure and preparation method thereof based on Si underlayer nitriding gallium HEMT low resistance Ohmic contact | |
| CN109873034B (en) | Normally-off HEMT power device for depositing polycrystalline AlN and preparation method thereof | |
| CN109742142A (en) | A kind of GaN-based HEMT device and preparation method thereof | |
| CN108878509B (en) | Gallium nitride transistor and method for manufacturing same | |
| CN109585544A (en) | A kind of structure and preparation method thereof based on the enhanced HEMT device low resistance Ohmic contact of gallium nitride | |
| CN106711212A (en) | Enhanced HEMT device based on Si substrate AlGaN/GaN heterojunction base and its manufacturing method | |
| CN108376707A (en) | A kind of enhanced HEMT device of GaN base and preparation method thereof | |
| CN112216739A (en) | Low thermal resistance silicon-based gallium nitride microwave and millimeter wave device material structure and preparation method | |
| CN111969046A (en) | High-linearity enhanced gallium nitride high-electron-mobility transistor and preparation method thereof | |
| CN109659362A (en) | A kind of structure and preparation method thereof based on the low ohm contact resistance of gallium nitride power HEMT structure | |
| CN109659358A (en) | A kind of low ohm contact resistance structure of gallium nitride HEMT and preparation method thereof | |
| JP2023554559A (en) | Group III nitride transistor structure capable of reducing leakage current and method for manufacturing the same | |
| CN114725022A (en) | A kind of preparation method of CMOS inverter based on GaOx-GaN | |
| CN109659363A (en) | A kind of preparation method of the low ohm contact structures of gallium nitride HEMT structure | |
| CN113066863A (en) | A kind of enhancement mode HEMT device based on ferroelectric gate dielectric and its fabrication method | |
| CN104393045A (en) | Novel GaN-base reinforced HEMT device and manufacturing method thereof | |
| CN207925477U (en) | A AlGaN/GaN Heterojunction HEMT Device Compatible with Si-CMOS Process | |
| CN206697485U (en) | Enhancement Mode HEMT Device Based on Si Substrate AlGaN/GaN Heterojunction | |
| CN113871480A (en) | Normally-off channel modulation device and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190419 |