CN109545825B - A top-emitting display panel - Google Patents
A top-emitting display panel Download PDFInfo
- Publication number
- CN109545825B CN109545825B CN201811369176.9A CN201811369176A CN109545825B CN 109545825 B CN109545825 B CN 109545825B CN 201811369176 A CN201811369176 A CN 201811369176A CN 109545825 B CN109545825 B CN 109545825B
- Authority
- CN
- China
- Prior art keywords
- thickness
- color filter
- layer
- orthographic projection
- filter portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Engineering & Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Development (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Optical Filters (AREA)
Abstract
本发明实施例提供一种顶发光显示面板，涉及显示技术领域，可提高纹路识别的准确性。一种顶发光显示面板，包括TFT背板，依次设置于所述TFT背板上的金属遮光层、反射阳极层、发光功能层、阴极层以及彩色滤光层；所述彩色滤光层包括第一颜色滤光部、第二颜色滤光部和第三颜色滤光部；第一颜色、第二颜色和第三颜色互为三基色；所述金属遮光层和所述反射阳极层至少设置有指纹识别区域，且所述金属遮光层和所述反射阳极层在所述指纹识别区域具有若干成像孔；第一颜色滤光部的与至少部分所述成像孔在所述TFT背板上的正投影重叠部分的厚度为第一厚度，所述第一厚度小于第一颜色滤光部的其他部分的厚度。
Embodiments of the present invention provide a top-emitting display panel, which relates to the field of display technology and can improve the accuracy of pattern recognition. A top-emitting display panel includes a TFT backplane, a metal light-shielding layer, a reflective anode layer, a light-emitting functional layer, a cathode layer, and a color filter layer sequentially arranged on the TFT backplane; the color filter layer includes a first a color filter part, a second color filter part and a third color filter part; the first color, the second color and the third color are three primary colors of each other; the metal light-shielding layer and the reflective anode layer are at least provided with fingerprint identification area, and the metal light-shielding layer and the reflective anode layer have several imaging holes in the fingerprint identification area; the first color filter part and at least part of the imaging holes are on the TFT backplane The thickness of the projected overlapping portion is a first thickness, and the first thickness is smaller than the thickness of other portions of the first color filter portion.
Description
Technical Field
The invention relates to the technical field of display, in particular to a top-emitting display panel.
Background
Organic electroluminescent diodes (OLEDs for short) are becoming the mainstream of the Display field due to their excellent properties such as low power consumption, high color saturation, wide viewing angle, thin thickness, and flexibility, and can be widely applied to terminal products such as smart phones, tablet computers, and televisions.
In the prior art, a fingerprint recognition function is integrated in an OLED display panel, and how to improve the accuracy of fingerprint recognition of the OLED display panel is a problem to be solved urgently by those skilled in the art.
Disclosure of Invention
The embodiment of the invention provides a top-emitting display panel, which can improve the accuracy of grain identification.
In order to achieve the above purpose, the embodiment of the invention adopts the following technical scheme:
on one hand, the top light-emitting display panel is characterized by comprising a TFT backboard, a metal shading layer, a reflection anode layer, a light-emitting functional layer, a cathode layer and a color filter layer, wherein the metal shading layer, the reflection anode layer, the light-emitting functional layer, the cathode layer and the color filter layer are sequentially arranged on the TFT backboard; the color filter layer comprises a first color filter part, a second color filter part and a third color filter part; the first color, the second color and the third color are three primary colors; the metal shading layer and the reflection anode layer are at least provided with fingerprint identification areas, and the metal shading layer and the reflection anode layer are provided with a plurality of imaging holes in the fingerprint identification areas; the thickness of the part, overlapped with the orthographic projection of at least part of the imaging hole, of the first color filter part on the TFT back plate is a first thickness, and the first thickness is smaller than the thickness of other parts of the first color filter part.
Optionally, a thickness of a portion of the second color filter portion, which overlaps with an orthographic projection of at least part of the imaging hole on the TFT backplane, is a second thickness, and the second thickness is smaller than thicknesses of other portions of the second color filter portion.
Optionally, the thickness of the part, overlapping with the orthographic projection of at least part of the imaging hole, of the third color filter part on the TFT backplane is a third thickness, and the third thickness is smaller than the thickness of the other part of the third color filter part.
Optionally, the thicknesses of the overlapping portions of the orthographic projections of the first color filter portion, the second color filter portion, and the third color filter portion on the TFT backplane and the orthographic projections of all the imaging holes on the TFT backplane are the first thickness, the second thickness, and the third thickness, respectively.
Optionally, a shape of a portion of the first color filter portion with the first thickness is the same as the shape of the imaging hole and has the same center, and a difference between a size of a portion of the first color filter portion, which is orthographic projected on the TFT backplane and completely overlapped with the imaging hole, and a size of a portion of the first color filter portion with the first thickness is 2 to 6 μm; and/or the shape of the part with the second thickness in the second color filter part is the same as the shape of the imaging hole, and the difference between the diameter of the part of the second color filter part, which is orthographic projection on the TFT back plate and completely overlapped with the imaging hole, and the diameter of the part with the second thickness in the second color filter part is 2-6 μm; and/or the shape of the part with the third thickness in the third color filter part is the same as the shape of the imaging hole, and the difference between the diameter of the part of the third color filter part, which is orthographic projection on the TFT back plate and completely overlapped with the imaging hole, and the diameter of the part with the third thickness in the third color filter part is 2-6 μm.
Optionally, the first thickness is 0, and an area ratio of a first thickness portion in the first color filter portion is less than or equal to 50%; and/or, the second thickness is 0, and the area ratio of the second thickness part in the second color filter part is less than or equal to 50%; and/or the third thickness is 0, and the area ratio of the third thickness part in the third color filter part is less than or equal to 50%.
Optionally, the first thickness is 1% to 50% of the thickness of the other portion of the first color filter, and the area ratio of the first thickness portion of the first color filter in the first color filter is less than or equal to 60%; and/or the second thickness is 1% -50% of the thickness of the other part in the second color filter part, and the area ratio of the second thickness part in the second color filter part is less than or equal to 60%; and/or the third thickness is 1% to 50% of the thickness of the other portion of the third color filter, and the area ratio of the third thickness portion of the third color filter in the third color filter is 60% or less.
Optionally, in a case that the thickness of the overlapping portion of the first color filter portion and the orthographic projection of part of the imaging holes on the TFT backplane is a first thickness, the imaging holes overlapping the first thickness of the first color filter portion are uniformly arranged; and/or, in the case that the thickness of the part of the second color filter part which overlaps with the orthographic projection of part of the imaging hole on the TFT back plate is a second thickness, the imaging holes which partially overlap with the second thickness of the second color filter part are uniformly arranged; and/or, in the case that the thickness of the part of the third color filter part which overlaps with the orthographic projection of part of the imaging hole on the TFT back plate is the third thickness, the imaging holes which partially overlap with the third thickness of the third color filter part are uniformly arranged.
Optionally, the optical sensing layer further comprises a plurality of optical sensing units, and an orthographic projection of one optical sensing unit on the TFT backplane has an overlapping region with an orthographic projection of one imaging hole on the TFT backplane.
Optionally, the packaging film further comprises an encapsulation layer; the color filter layer is arranged on one side, away from the metal shading layer, of the packaging layer.
The embodiment of the invention provides a top light-emitting display panel, which can solve the problem that the display effect is influenced because ambient light enters the top light-emitting display panel and is reflected by a reflecting anode layer by arranging a color filter layer on the light emergent side of the top light-emitting display panel; meanwhile, the thickness of the orthographic projection overlapping part of the first color filter part and at least part of the imaging hole on the TFT backboard is made to be the first thickness, and the first thickness is smaller than the thickness of other parts of the first color filter part, so that light reflected by the grains to be detected can pass through the first thickness part and the imaging hole in the first color filter part as much as possible and is used for grain identification.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a top emission display panel according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a top emission display panel according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a top emission display panel according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a top emission display panel according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a top emission display panel according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a top emission display panel according to an embodiment of the present invention.
Reference numerals:
10-a substrate; 111-gate; 112-a gate insulating layer; 113-an active layer; 114-source; 115-drain electrode; 12-a metallic light-shielding layer; 121-an imaging aperture; 131-a reflective anode layer; 132-a light emitting functional layer; 133-a cathode layer; 14-an encapsulation layer; 15-black matrix; 161-a first colour filter portion; 162-a second color filter portion; 163-third color filter portion.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention provides a top-emission display panel, which comprises a Thin Film Transistor (TFT) backboard, a metal shading layer 12, a reflection anode layer 131, a light-emitting functional layer 132, a cathode layer 133 and a color filter layer, wherein the metal shading layer 12, the reflection anode layer 131, the light-emitting functional layer 132, the cathode layer 133 and the color filter layer are sequentially arranged on the TFT backboard; the color filter layer includes a first color filter portion 161, a second color filter portion 162, and a third color filter portion 163; the first color, the second color and the third color are three primary colors; the metal shading layer 12 and the reflective anode layer 131 are at least provided with fingerprint identification areas, and the metal shading layer 12 and the reflective anode layer 131 are provided with a plurality of imaging holes 121 in the fingerprint identification areas; the thickness of the portion of the first color filter portion 161 overlapping with the orthographic projection of at least part of the imaging hole 121 on the TFT back plate is a first thickness, which is smaller than the thickness of the other portion of the first color filter portion 161.
Here, the TFT backplane includes a substrate 10, and a TFT disposed on the substrate 10, and the TFT includes a gate electrode 111, a gate insulating layer 112, an active layer 113, a source electrode 114, and a drain electrode 115. The black matrix 15 is further included between the second color filter 162, between the second color filter 162 and the third color filter 163, and between the first color filter 161 and the third color filter 163.
In this case, the first color filter 161, the second color filter 162, and the third color filter 163 may be formed first, and then the black matrix 15 may be formed; the black matrix 15 may be formed first, and then the first color filter portion 161, the second color filter portion 162, and the third color filter portion 163 may be formed.
First, the structure of the TFT is not limited, and as shown in fig. 1 to 4, the TFT may be a bottom gate type; as shown in fig. 5, the TFT may also be of a top gate type; as shown in fig. 6, the TFT may be a double gate type.
Second, the material of the active layer 113 is not limited, and it may be made of amorphous silicon, oxide, organic, or the like.
In addition, the type of the TFT is not limited, and may be a back channel type or an etch stop type, which may be determined according to the material of the active layer 113 and the process for forming the source electrode 114 and the drain electrode 115.
Third, the top emission display panel includes a light emission function layer 132 that can self-emit light, i.e., the top emission display panel is a self-emission display panel, for example, an OLED display panel or a quantum dot display panel.
Fourth, the reflective anode layer 131 includes a material that can reflect light, for example, the material of the reflective anode layer 131 is metal.
Fifth, the first color, the second color, and the third color may be red, green, and blue with respect to each other; alternatively, the first color, the second color, and the third color may be magenta, cyan, and yellow, respectively.
Sixthly, a specific thickness value of the first thickness is not limited, and a specific thickness value of a portion other than the first thickness portion of the first color filter 161 is not limited; the first thickness and the thickness of the first color filter 161 excluding the first thickness are based on actual requirements.
The difference between the first thickness and the thickness of the first color filter portion 161 excluding the first thickness portion is not limited as long as the first thickness is smaller than the thickness of the first color filter portion 161 excluding the first thickness portion.
Specifically, the first thickness is 0, and the area ratio of the first thickness portion in the first color filter portion 161 is 50% or less.
For example, assuming that the first thickness is 0, the total area of the first color filter portions 161 in the top emission display panel is 0.1m2The area of the portion of the first color filter 161 having a thickness of 0 is 0.05m or less2。
Here, when the first thickness is 0, the area ratio of the first thickness portion in the first color filter portion 161 is preferably 20% or less.
Alternatively, the first thickness is 1% to 50% of the thickness of the other portions of the first color filter portion 161, and the area ratio of the first thickness portion of the first color filter portion 161 in the first color filter portion 161 is 60% or less.
For example, the total area of the first color filter portions 161 in the top emission display panel is 0.1m2Wherein, the thickness of the other part except the first thickness part in the first color filter part 161 is 1 μm, the first thickness is 0.01-0.5 μm, the area of the part with the first thickness in the first color filter part 161 is less than or equal to 0.06m2。
Seventh, the imaging holes 121 include a first imaging hole whose orthographic projection on the TFT back plate overlaps with the orthographic projection of the first color filter portion 161 on the TFT back plate, a second imaging hole whose orthographic projection on the TFT back plate overlaps with the orthographic projection of the second color filter portion 162 on the TFT back plate, and a third imaging hole whose orthographic projection on the TFT back plate overlaps with the orthographic projection of the third color filter portion 163 on the TFT back plate.
The thickness of the overlapping part of the first color filter part 161 and the orthographic projection of at least part of the imaging hole 121 on the TFT back plate is a first thickness, and means that: the thickness of the orthographic projection overlapping part of the first color filter part 161 and part of the first imaging hole on the TFT back plate is a first thickness; alternatively, the thickness of the orthographic projection overlapping part of the first color filter portion 161 and all the first imaging holes on the TFT backplane is the first thickness.
Here, when the thickness of the overlapping portion of the first color filter portion 161 and the orthographic projection of a part of the first imaging hole on the TFT backplane is a first thickness, the first imaging hole overlapping the first thickness of the first color filter portion 161 is preferably uniformly provided, and thus, it is possible to avoid a problem that the display effect is affected by the difference in thickness of the first color filter portion 161 at each position.
As shown in fig. 1, an orthographic projection of the portion of the first color filter portion 161 with the first thickness on the TFT backplane may exactly and completely overlap an orthographic projection of the first imaging hole on the TFT backplane; alternatively, the orthographic projection of the portion of the first color filter portion 161 having the first thickness on the TFT back plate may overlap with the orthographic projection of the first imaging hole on the TFT back plate.
In the case where the orthographic projection of the portion of the first color filter portion 161 having the first thickness on the TFT backplane overlaps with the orthographic projection of the first imaging hole on the TFT backplane, the area of the portion of the first color filter portion 161 having the first thickness may be larger than the area of the first imaging hole or smaller than the area of the first imaging hole.
Here, it is preferable that the shape of the portion of the first color filter portion 161 having the first thickness is the same as the shape of the imaging hole 121 and has the same center, and the difference between the size of the portion of the first color filter portion 161 where the orthographic projection on the TFT back plate completely overlaps the imaging hole 121 and the size of the portion of the first color filter portion 161 having the first thickness is 2 to 6 μm, so as to prevent the external ambient light from passing through the first thickness portion of the first color filter portion 161 and affecting the grain recognition accuracy.
Illustratively, the shape of the imaging hole 121 is circular, the shape of the portion of the first color filter portion 161 with the first thickness is also circular, the orthographic projection of the imaging hole 121 on the TFT back plate and the orthographic projection of the portion of the first color filter portion 161 with the first thickness on the TFT back plate are concentric circles, and the orthographic projection of the portion of the first color filter portion 161 with the first thickness on the TFT back plate exceeds the edge of the orthographic projection of the imaging hole 121 on the TFT back plate by 1-3 μm; or, the orthographic projection of the imaging hole 121 on the TFT back plate exceeds the edge of the orthographic projection of the part with the first thickness in the first color filter part 161 on the TFT back plate by 1-3 μm.
Eighth, the shape of the imaging hole 121 is not limited, and may be, for example, a rectangle, a polygon, a circle, an ellipse, or the like.
Ninthly, the structure of the metal light shielding layer 12 is not limited, and as shown in fig. 2 to 4, the metal light shielding layer 12 may be a flat plate structure including an imaging hole 121 and being tiled on the display area of the top emission display panel; alternatively, as shown in fig. 1, 5 and 6, the TFT backplane includes a plurality of TFTs insulated from each other, the metal light shielding layer 12 includes a plurality of block structures, and the plurality of block structures can be electrically connected to the source electrode 114, and at this time, the metal light shielding layer 12 can be used as a conductive lead (e.g., a data line); the plurality of block structures may also be electrically connected to the drain electrode 115, and in this case, the reflective anode layer 131 may be electrically connected to the drain electrode 115 through the metal light-shielding layer 12. That is, the metal light shielding layer 12 may be used for texture recognition, and may be reused as another source and/or drain, so as to simplify the manufacturing process of the top emission display panel and save the manufacturing cost.
Tenth, as shown in fig. 1 and 2, the metal light shielding layer 12 and the reflective anode layer 131 are at least provided with a fingerprint identification area, and the metal light shielding layer 12 and the reflective anode layer 131 have a plurality of imaging holes 121 in the fingerprint identification area: the metal light shielding layer 12 and the reflective anode layer 131 both include light-passing holes, and an orthographic projection of the light-passing holes in the metal light shielding layer 12 on the TFT backplane completely overlaps with an orthographic projection of the light-passing holes in the reflective anode layer 131 on the TFT backplane, and the imaging holes 121 are formed by the light-passing holes in the metal light shielding layer 12 in the reflective anode layer 131.
The embodiment of the invention provides a top light-emitting display panel, which can solve the problem that the display effect is influenced because ambient light enters the top light-emitting display panel and is reflected by a reflecting anode layer 131 by arranging a color filter layer on the light emergent side of the top light-emitting display panel; meanwhile, the thickness of the overlapping part of the first color filter part 161 and the orthographic projection of at least part of the imaging hole 121 on the TFT back plate is made to be a first thickness, and the first thickness is smaller than the thickness of the other parts of the first color filter part 161, so that the light reflected by the grain to be detected can pass through the first thickness part in the first color filter part 161 and the imaging hole 121 as much as possible and is used for grain identification.
Here, the texture to be detected may be a fingerprint, a palm print, or other object to be detected having a texture. Since the light-shielding property of the reflective anode layer 131 is insufficient, when the metal light-shielding layer 12 includes a plurality of block structures, the ambient light can more easily pass through the gap between adjacent block structures than a flat plate structure, and the embodiment of the invention uses the top emission display panel to shield part of the ambient light through the part of the first color filter portion 161 except the first thickness part, so as to better improve the accuracy of the grain identification of the top emission display panel including the metal light-shielding layer 12 formed by the plurality of block structures.
Optionally, the thickness of the portion of the second color filter portion 162 overlapping with the orthographic projection of at least part of the imaging hole 121 on the TFT back plate is a second thickness, and the second thickness is smaller than the thickness of the other portion of the second color filter portion 162.
First, the specific thickness value of the second thickness is not limited, and the specific thickness value of the portion other than the second thickness portion in the second color filter 162 is not limited; the second thickness and the thickness of the second color filter portion 162 except for the second thickness portion are based on actual requirements.
The difference between the second thickness and the thickness of the second color filter portion 162 excluding the second thickness portion is not limited as long as the second thickness is smaller than the thickness of the second color filter portion 162 excluding the second thickness portion.
Specifically, the second thickness is 0, and the area ratio of the second thickness portion in the second color filter portion 162 is 50% or less.
For example, assuming that the second thickness is 0, the total area of the second color filter portions 162 in the top emission display panel is 0.1m2The area of the portion of the second color filter portion 162 having a thickness of 0 is 0.05m or less2。
Here, when the second thickness is 0, the area ratio of the second thickness portion in the second color filter portion 162 is preferably 20% or less.
Alternatively, the second thickness is 1% to 50% of the thickness of the other portions of the second color filter portion 162, and the area ratio of the second thickness portion of the second color filter portion 162 in the second color filter portion 162 is 60% or less.
For example, the total area of the second color filter portions 162 in the top emission display panel is 0.1m2Wherein, the thickness of the second color filter part 162 except the second thickness part is 1 μm, the second thickness is 0.01-0.5 μm, and the area of the second thickness part in the second color filter part 162 is not more than 0.06m2。
Second, the thickness of the portion of the second color filter 162 overlapping with the orthographic projection of at least part of the imaging hole 121 on the TFT back plate is a second thickness, which means: the thickness of the overlapping part of the second color filter part 162 and the orthographic projection of part of the second imaging hole on the TFT back plate is a second thickness; alternatively, the thickness of the overlapping portion of the second color filter portion 162 and the orthographic projection of all the second imaging holes on the TFT backplane is the second thickness.
Here, when the thickness of the overlapping portion of the second color filter portion 162 and the orthographic projection of part of the second imaging hole on the TFT backplane is the second thickness, the second imaging holes overlapping the second thickness of the second color filter portion 162 are preferably uniformly provided, so that the problem that the display effect is affected by the difference in thickness of the second color filter portion 162 at each position can be avoided.
As shown in fig. 2, an orthographic projection of the portion of the second color filter portion 162 with the second thickness on the TFT backplane may exactly and completely overlap with an orthographic projection of the second imaging hole on the TFT backplane; alternatively, the orthographic projection of the portion of the second color filter portion 162 having the second thickness on the TFT backplane may overlap with the orthographic projection of the second imaging hole on the TFT backplane.
In the case where the orthographic projection of the portion of the second color filter portion 162 having the second thickness on the TFT backplane overlaps with the orthographic projection of the second imaging hole on the TFT backplane, the area of the portion of the second color filter portion 162 having the second thickness may be larger than the area of the second imaging hole or smaller than the area of the second imaging hole.
Here, it is preferable that the shape of the portion of the second color filter portion 162 having the second thickness is the same as the shape of the imaging hole 121 and has the same center, and the difference between the size of the portion of the second color filter portion 162 that is completely overlapped with the imaging hole 121 in the orthographic projection on the TFT back plate and the size of the portion of the second color filter portion 162 having the second thickness is 2 to 6 μm, so as to prevent the external ambient light from passing through the second thickness portion of the second color filter portion 162 and affecting the grain recognition accuracy.
Illustratively, the shape of the imaging hole 121 is circular, the shape of the portion of the second color filter portion 162 having the second thickness is also circular, and the orthographic projection of the imaging hole 121 on the TFT back plate and the orthographic projection of the portion of the second color filter portion 162 having the second thickness on the TFT back plate are concentric circles, and the orthographic projection of the portion of the second color filter portion 162 having the second thickness on the TFT back plate exceeds the edge of the orthographic projection of the imaging hole 121 on the TFT back plate by 1 to 3 μm; or, the orthographic projection of the imaging hole 121 on the TFT back plate exceeds the edge of the orthographic projection of the part with the second thickness in the second color filter part 162 on the TFT back plate by 1-3 μm.
Third, the thickness of the second color filter portion 162 other than the second thickness portion may be equal to or different from the thickness of the first color filter portion 161 other than the first thickness portion.
Preferably, the thickness of the second color filter portion 162 excluding the second thickness portion is equal to the thickness of the first color filter portion 161 excluding the first thickness portion, so that the second color filter portion 162 excluding the second thickness portion and the first color filter portion 161 excluding the first thickness portion can be formed at the same time.
Fourth, the first thickness may or may not be equal to the second thickness.
The first thickness is preferably equal to the second thickness, so that the first thickness portion of the first color filter portion 161 and the second thickness portion of the second color filter portion 162 can be formed at the same time when the thickness of the second color filter portion 162 excluding the second thickness portion is equal to the thickness of the first color filter portion 161 excluding the first thickness portion.
In the embodiment of the present invention, the thickness of the portion of the second color filter portion 162 overlapping with the orthographic projection of at least part of the imaging hole 121 on the TFT back plate is the second thickness, and the second thickness is smaller than the thickness of the other portion of the second color filter portion 162, so that the light reflected by the grain to be detected can pass through the second thickness portion of the second color filter portion 162 and the imaging hole 121 as much as possible and be used for grain identification, and meanwhile, since the thickness of the portion of the second color filter portion 162 except the second thickness portion is larger than the second thickness, more ambient light can be shielded compared with the second thickness portion, so as to improve the accuracy of the grain identification.
Alternatively, as shown in fig. 3, the thickness of the portion of the third color filter portion 163 overlapping with the orthographic projection of at least part of the imaging hole 121 on the TFT back plate is a third thickness, and the third thickness is smaller than the thickness of the other portion of the third color filter portion 163.
First, the specific thickness value of the third thickness is not limited, and the specific thickness value of the portion other than the third thickness portion in the third color filter 163 is not limited; the third thickness and the thickness of the third color filter 163 excluding the third thickness are based on actual requirements.
The difference between the third thickness and the thickness of the third color filter portion 163 other than the third thickness portion is not limited as long as the third thickness is smaller than the thickness of the third color filter portion 163 other than the third thickness portion.
Specifically, the third thickness is 0, and the area ratio of the third thickness portion in the third color filter portion 163 is 50% or less.
For example, assuming that the third thickness is 0, the total area of the third color filter portions 163 in the top emission display panel is 0.1m2The area of the portion of the third color filter portion 163 having a thickness of 0 is 0.05m or less2。
Here, when the third thickness is 0, the area ratio of the third thickness portion in the third color filter portion 163 is preferably 20% or less.
Alternatively, the third thickness is 1% to 50% of the thickness of the other portions of the third color filter portion 163, and the area ratio of the third thickness portion in the third color filter portion 163 is 60% or less.
For example, the total area of the third color filter portions 163 in the top emission display panel is 0.1m2Wherein, when the thickness of the other part except the third thickness part in the third color filter part 163 is 1 μm, the third thickness is 0.01 to 0.5 μm, and the area of the part with the third thickness in the third color filter part 163 is 0.06m or less2。
Second, the thickness of the portion of the third color filter 163 overlapping with the orthographic projection of at least part of the imaging hole 121 on the TFT back plate is a third thickness, which means: the thickness of the overlapping part of the third color filter part 163 and the orthographic projection of part of the third imaging hole on the TFT back plate is a third thickness; alternatively, the thickness of the overlapping portion of the third color filter portion 163 and the orthographic projection of all the third imaging holes on the TFT backplane is the third thickness.
Here, it is preferable that, when the thickness of the portion where the third color filter portion 163 overlaps with the orthographic projection of part of the third imaging hole on the TFT back plate is the third thickness, the third imaging holes overlapping with the third thickness of the third color filter portion 163 are uniformly provided, so that it is possible to avoid a problem that the display effect is affected by the difference in thickness of the third color filter portion 163 at each position.
As shown in fig. 3, an orthographic projection of the portion of the third color filter portion 163 with the third thickness on the TFT backplane may exactly and completely overlap with an orthographic projection of the third imaging hole on the TFT backplane; alternatively, the orthographic projection of the portion of the third color filter portion 163 having the third thickness on the TFT backplane may partially overlap the orthographic projection of the third imaging hole on the TFT backplane.
In the case where the orthographic projection of the portion of the third color filter portion 163 having the third thickness on the TFT backplane overlaps with the orthographic projection of the third imaging hole on the TFT backplane, the area of the portion of the third color filter portion 163 having the third thickness may be larger than the area of the third imaging hole or smaller than the area of the third imaging hole.
Here, it is preferable that the shape of the portion of the third color filter portion 163 having the third thickness is the same as the shape of the imaging hole 121 and has the same center, and the difference between the size of the portion of the third color filter portion 163 having the third thickness and the size of the portion of the third color filter portion 163 having the third thickness in the TFT back plate, which is an orthographic projection of the third color filter portion 163 onto the TFT back plate, and the size of the portion of the third color filter portion 163 having the third thickness is 2 to 6 μm, so as to prevent the texture recognition accuracy from being affected by the excessive ambient light passing through the third thickness portion of the third color filter portion 163.
Illustratively, the shape of the imaging hole 121 is circular, the shape of the portion of the third color filter portion 163 with the third thickness is also circular, and the orthographic projection of the imaging hole 121 on the TFT back plate and the orthographic projection of the portion of the third color filter portion 163 with the third thickness on the TFT back plate are concentric circles, and the orthographic projection of the portion of the third color filter portion 163 with the third thickness on the TFT back plate exceeds the edge of the orthographic projection of the imaging hole 121 on the TFT back plate by 1-3 μm; or, the orthographic projection of the imaging hole 121 on the TFT back plate exceeds the edge of the orthographic projection of the part with the third thickness in the third color filter part 163 on the TFT back plate by 1-3 μm.
Third, the thickness of the portion of the third color filter portion 163 other than the third thickness portion may be equal to only the thickness of the portion of the first color filter portion 161 other than the first thickness portion, alternatively, the thickness of the portion of the third color filter portion 163 other than the third thickness portion may be equal to only the thickness of the portion of the second color filter portion 162 other than the second thickness portion, alternatively, the thickness of the portion of the third color filter portion 163 other than the third thickness portion may be equal to the thickness of the portion of the second color filter portion 162 other than the second thickness portion and the thickness of the portion of the first color filter portion 161 other than the first thickness portion, alternatively, the thickness of the portion other than the third thickness portion in the third color filter portion 163 may be different from the thickness of the portion other than the second thickness portion in the second color filter portion 162 and the thickness of the portion other than the first thickness portion in the first color filter portion 161.
Preferably, the thickness of the third color filter portion 163 excluding the third thickness portion is equal to the thickness of the second color filter portion 162 excluding the second thickness portion and the thickness of the first color filter portion 161 excluding the first thickness portion, so that the third color filter portion 163 excluding the third thickness portion, the second color filter portion 162 excluding the second thickness portion, and the first color filter portion 161 excluding the first thickness portion can be formed at the same time.
Fourth, the third thickness may be equal to only the first thickness, or the third thickness may be equal to only the second thickness, or the third thickness may be equal to both the second thickness and the first thickness, or both the third thickness and the first thickness may be different.
Preferably, the third thickness is equal to the first thickness and the second thickness, so that, in the case where the thickness of the portion other than the third thickness portion in the third color filter portion 163 is equal to the thickness of the portion other than the second thickness portion in the second color filter portion 162 and the thickness of the portion other than the first thickness portion in the first color filter portion 161, the portion of the first thickness in the first color filter portion 161, the portion of the second thickness in the second color filter portion 162, and the portion of the third thickness in the third color filter portion 163 can be formed at the same time.
In the embodiment of the present invention, the thickness of the portion of the third color filter portion 163 overlapping with the orthographic projection of at least part of the imaging hole 121 on the TFT back plate is the third thickness, and the third thickness is smaller than the thickness of the other portion of the third color filter portion 163, so that the light reflected by the grain to be detected can pass through the third thickness portion of the third color filter portion 163 and the imaging hole 121 as much as possible and be used for grain identification, and meanwhile, since the thickness of the portion of the third color filter portion 163 except the third thickness portion is larger than the third thickness, more ambient light can be shielded compared with the third thickness portion, so as to improve the accuracy of the grain identification.
Optionally, as shown in fig. 3 and 4, the top emission display panel further includes an optical sensing layer, the optical sensing layer includes a plurality of optical sensing units 20, and an orthogonal projection of one optical sensing unit 20 on the TFT backplane has an overlapping region with an orthogonal projection of one imaging hole 121 on the TFT backplane.
First, as shown in fig. 3, the optical sensing unit 20 may be disposed on a side of the TFT backplane away from the metal light shielding layer 12; as shown in fig. 4, the optical sensing unit 20 may be disposed on the side of the TFT backplane close to the metal light shielding layer 12.
Secondly, each optical sensing unit 20 is used for converting an optical signal into an electrical signal, wherein the optical sensing unit 20 may be a photosensor, or the like.
In the embodiment of the invention, the light reflected by the to-be-detected texture passes through the first thickness part, the second thickness part and the third thickness part and then is irradiated onto the optical sensing unit 20 through the imaging hole 121, and the optical sensing unit 20 converts the optical signal into the electrical signal to realize texture identification.
Optionally, as shown in fig. 1, an encapsulation layer 14 is further included; the color filter layer is disposed on a side of the encapsulation layer 14 away from the metal light shielding layer 12.
In the embodiment of the present invention, by disposing the color filter layer on the side of the encapsulation layer 14 away from the metal light shielding layer 12, the reflective anode layer 131, the light emitting functional layer 132, and the cathode layer 133 can be immediately encapsulated after being formed, so as to prevent air, water vapor, and the like from entering the light emitting functional layer 132 to affect the performance and the service life of the light emitting functional layer 132.
On this basis, as shown in fig. 2, the color filter layer may also be disposed between the encapsulation layer 14 and the cathode layer 133.
A color filter layer may be formed on the encapsulation layer 14, and then the encapsulation layer 14 with the color filter layer may be bonded to the side of the cathode layer 133 away from the metal light shielding layer 12 by an optically transparent adhesive.
The embodiment of the present invention further provides a method for manufacturing a top emission display panel, as shown in fig. 1, the top emission display panel includes a TFT backplane, and a metal light shielding layer 12, a reflective anode layer 131, a light emitting functional layer 132, and a cathode layer 133 sequentially disposed on the TFT backplane; the metal light shielding layer 12 and the reflective anode layer 131 are at least provided with a fingerprint identification area, and the metal light shielding layer 12 and the reflective anode layer 131 are provided with a plurality of imaging holes 121 in the fingerprint identification area.
The method comprises the following steps: forming a color filter layer on the side of the cathode layer 133 facing away from the TFT backplane; the color filter layer includes a first color filter portion 161, a second color filter portion 162, and a third color filter portion 163; the first color, the second color and the third color are three primary colors; the thickness of the portion of the first color filter portion 161 overlapping with the orthographic projection of at least part of the imaging hole 121 on the TFT back plate is a first thickness, which is smaller than the thickness of the other portion of the first color filter portion 161.
Specifically, a photolithography process is used to form a color filter layer on the side of the cathode layer 133 away from the TFT backplane, including: a color filter film is formed on the substrate 10, and the first color filter portion 161, the second color filter portion 162, and the third color filter portion 163 are formed by exposing and developing the color filter film using a mask plate.
When the first thickness is 0, the mask plate comprises an exposure area and a shielding area, if the material of the color filter film is positive glue, the exposure area corresponds to the first thickness part in the first color filter part 161, and the shielding area corresponds to the first color filter part 161 except the first thickness part; if the material of the color filter film is negative, the exposed area corresponds to the first color filter portion 161 except the first thickness portion, and the blocked area corresponds to the first thickness portion of the first color filter portion 161.
When the first thickness is not 0, the mask plate includes a semi-exposure region and a shielding region, and if the material of the color filter film is positive glue, the shielding region corresponds to a portion of the first color filter portion 161 other than the first thickness portion, and the semi-exposure region corresponds to a portion of the first thickness of the first color filter portion 161.
The embodiments of the present invention provide a method for manufacturing a display panel, which has the same technical effect as the display panel, and will not be described herein again.
Alternatively, as shown in fig. 2, the thickness of the portion of the second color filter portion 162 overlapping with the orthographic projection of at least part of the imaging hole 121 on the TFT back plate is a second thickness, and the second thickness is smaller than the thickness of the other portion of the second color filter portion 162.
Specifically, a photolithography process is used to form a color filter layer on the side of the cathode layer 133 away from the TFT backplane, including: a color filter film is formed on the substrate 10, and the first color filter portion 161, the second color filter portion 162, and the third color filter portion 163 are formed by exposing and developing the color filter film using a mask plate.
When the second thickness is 0, the mask plate includes an exposure area and a shielding area, if the material of the color filter film is positive glue, the exposure area corresponds to the second thickness portion of the second color filter portion 162, and the shielding area corresponds to the second color filter portion 162 except the first thickness portion; if the material of the color filter film is negative, the exposed area corresponds to the second color filter portion 162 except the second thickness portion, and the blocked area corresponds to the second thickness portion of the second color filter portion 162.
When the second thickness is not 0, the mask plate includes a semi-exposure region and a shielding region, and if the material of the color filter film is positive glue, the shielding region corresponds to a portion of the second color filter portion 162 except for the portion of the second thickness, and the semi-exposure region corresponds to the portion of the second thickness of the second color filter portion 162.
In the embodiment of the present invention, the thickness of the portion of the second color filter portion 162 overlapping with the orthographic projection of at least part of the imaging hole 121 on the TFT back plate is the second thickness, and the second thickness is smaller than the thickness of the other portion of the second color filter portion 162, so that the light reflected by the grain to be detected can pass through the second thickness portion of the second color filter portion 162 and the imaging hole 121 as much as possible and be used for grain identification, and meanwhile, since the thickness of the portion of the second color filter portion 162 except the second thickness portion is larger than the second thickness, more ambient light can be shielded compared with the second thickness portion, so as to improve the accuracy of the grain identification.
Alternatively, as shown in fig. 3, the thickness of the portion of the third color filter portion 163 overlapping with the orthographic projection of at least part of the imaging hole 121 on the TFT back plate is a third thickness, and the third thickness is smaller than the thickness of the other portion of the third color filter portion 163.
Specifically, a photolithography process is used to form a color filter layer on the side of the cathode layer 133 away from the TFT backplane, including: a color filter film is formed on the substrate 10, and the first color filter portion 161, the second color filter portion 162, and the third color filter portion 163 are formed by exposing and developing the color filter film using a mask plate.
When the third thickness is 0, the mask plate includes an exposure area and a blocking area, if the material of the color filter film is positive glue, the exposure area corresponds to a portion of the third thickness in the third color filter portion 163, and the blocking area corresponds to a portion of the third color filter portion 163 other than the portion of the third thickness; if the material of the color filter film is a negative resist, the exposed area corresponds to the third color filter portion 163 except for the third thickness portion, and the blocked area corresponds to the third thickness portion of the third color filter portion 163.
When the third thickness is not 0, the mask plate includes a semi-exposure region and a shielding region, and if the material of the color filter film is positive glue, the shielding region corresponds to a portion of the third color filter portion 163 other than the portion of the third thickness, and the semi-exposure region corresponds to a portion of the third thickness of the third color filter portion 163.
In the embodiment of the present invention, the thickness of the portion of the third color filter portion 163 overlapping with the orthographic projection of at least part of the imaging hole 121 on the TFT back plate is the third thickness, and the third thickness is smaller than the thickness of the other portion of the third color filter portion 163, so that the light reflected by the grain to be detected can pass through the third thickness portion of the third color filter portion 163 and the imaging hole 121 as much as possible and be used for grain identification, and meanwhile, since the thickness of the portion of the third color filter portion 163 except the third thickness portion is larger than the third thickness, more ambient light can be shielded compared with the third thickness portion, so as to improve the accuracy of the grain identification.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811369176.9A CN109545825B (en) | 2018-11-16 | 2018-11-16 | A top-emitting display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811369176.9A CN109545825B (en) | 2018-11-16 | 2018-11-16 | A top-emitting display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109545825A CN109545825A (en) | 2019-03-29 |
| CN109545825B true CN109545825B (en) | 2021-02-02 |
Family
ID=65848106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811369176.9A Active CN109545825B (en) | 2018-11-16 | 2018-11-16 | A top-emitting display panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109545825B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110112193B (en) * | 2019-04-29 | 2021-10-15 | 上海天马微电子有限公司 | Organic light-emitting display panel and organic light-emitting display device |
| CN110326107B (en) | 2019-05-23 | 2023-10-27 | 京东方科技集团股份有限公司 | OLED display substrate, panel, device, manufacturing method, fingerprint recognition module |
| CN113471263B (en) | 2021-06-30 | 2024-05-28 | 上海天马微电子有限公司 | Display panel and display device |
| CN114565950B (en) | 2021-07-23 | 2025-01-24 | 友达光电股份有限公司 | Optical sensing device |
| CN114420876B (en) * | 2022-01-28 | 2024-02-09 | 武汉天马微电子有限公司 | Display panel and display device |
| CN118942339A (en) * | 2024-09-27 | 2024-11-12 | 合肥维信诺科技有限公司 | Display panel and display device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106298859A (en) * | 2016-09-30 | 2017-01-04 | 京东方科技集团股份有限公司 | Contact panel and display device |
| CN106873063A (en) * | 2017-02-23 | 2017-06-20 | 京东方科技集团股份有限公司 | A kind of display device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10181070B2 (en) * | 2015-02-02 | 2019-01-15 | Synaptics Incorporated | Low profile illumination in an optical fingerprint sensor |
| US9864400B2 (en) * | 2015-10-30 | 2018-01-09 | Essential Products, Inc. | Camera integrated into a display |
-
2018
- 2018-11-16 CN CN201811369176.9A patent/CN109545825B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106298859A (en) * | 2016-09-30 | 2017-01-04 | 京东方科技集团股份有限公司 | Contact panel and display device |
| CN106873063A (en) * | 2017-02-23 | 2017-06-20 | 京东方科技集团股份有限公司 | A kind of display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109545825A (en) | 2019-03-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109545825B (en) | A top-emitting display panel | |
| JP7029525B2 (en) | Array substrate and its manufacturing method | |
| CN106981503B (en) | A display panel and electronic device | |
| US10205121B2 (en) | Organic electroluminescent display panel and display apparatus | |
| CN110416434A (en) | Display substrate, manufacturing method thereof, and display device | |
| US11340745B2 (en) | Touch structure and method for manufacturing the same, touch substrate and touch display device | |
| CN110808272B (en) | Display panel, preparation method thereof and display device | |
| CN107977632A (en) | A kind of array base palte, display device and its lines recognition methods | |
| CN113314684B (en) | Display substrate and display device | |
| CN114267701A (en) | Display panel, manufacturing method thereof and display device | |
| CN108388056B (en) | Display panel and method of making the same | |
| CN113314680B (en) | Display panels and display devices | |
| US8951700B2 (en) | Methods of manufacturing optical filters and methods of manufacturing organic light emitting display devices having optical filters | |
| CN114078944B (en) | Display panel and manufacturing method thereof, and display device | |
| WO2022022068A1 (en) | Display panel and display apparatus | |
| KR102880938B1 (en) | Electro-luminescence display apparatus | |
| CN111048691A (en) | Display panel | |
| CN110703941A (en) | Touch structure, manufacturing method thereof, touch substrate and touch display device | |
| CN109786473B (en) | Packaging cover plate, manufacturing method thereof and display device | |
| US11744123B2 (en) | Array substrate and display device with light blocking layer including scattering particles | |
| CN114122091A (en) | Display panel, manufacturing method thereof and display device | |
| CN108899356B (en) | OLED display substrate, method for making the same, and display device | |
| TWI489625B (en) | Organic light-emitting display panel and method for manufacturing the same | |
| CN114122237A (en) | Display panel and preparation method thereof | |
| CN112310328A (en) | A light-emitting panel and light-emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |