CN109411603A - 显示面板、发光材料蒸镀方法以及装置 - Google Patents
显示面板、发光材料蒸镀方法以及装置 Download PDFInfo
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
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- 239000012044 organic layer Substances 0.000 description 3
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- 239000002184 metal Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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Abstract
本发明提供一种显示面板、发光材料蒸镀方法以及装置,该方法包括对齐掩膜板与阵列基板,生成覆盖阵列基板的电场,对发光材料进行处理,生成发光材料带电粒子;发光材料带电粒子穿过掩膜板后,在电场的作用下沉积在阵列基板的像素区域;这样通过提供覆盖阵列基板的电场,并生成发光材料带电粒子,这些发光材料带电粒子在穿过掩膜板后,在电场的作用下将改变运动方向,沿着电场方向垂直的向阵列基板的像素区域移动,然后均匀的沉积在阵列基板的像素区域,而不会沿原始运动方向沉积在像素临界位置,也不会沉积在其他位置,保证了发光材料的成膜均一性,解决了现有显示面板存在的子像素临界位置的发光材料成膜均一性不佳的技术问题。
Description
技术领域
本发明涉及显示领域,尤其涉及一种显示面板、发光材料蒸镀方法以及装置。
背景技术
在制造OLED显示面板时,目前大多先制作Array基板,然后通过蒸镀工艺将发光材料蒸镀到Array基板的像素区域。
现在蒸镀工艺如图1所示,将掩膜板Mask与Array基板对齐,然后蒸镀源对内部的发光材料进行蒸镀,但是在R/G/B子像素的临界位置,受制于Mask阴影影响,会出发光材料,如Electroluminescent(EL)材料成膜均一性不佳的现象,导致子像素的临界位置存在色偏或混色问题。
即,现有显示面板存在子像素临界位置的发光材料成膜均一性不佳的技术问题。
发明内容
本发明提供一种显示面板、发光材料蒸镀方法以及装置,以解决现有显示面板存在的子像素临界位置的发光材料成膜均一性不佳的技术问题。
为解决上述问题,本发明提供的技术方案如下:
本发明实施例提供了一种发光材料蒸镀方法,其包括:
对齐掩膜板与阵列基板;
生成覆盖所述阵列基板的电场;
对发光材料进行处理,生成发光材料带电粒子;所述发光材料带电粒子穿过所述掩膜板后,在所述电场的作用下沉积在所述阵列基板的像素区域。
在本发明的发光材料蒸镀方法中,所述生成覆盖所述阵列基板的电场的步骤包括:
将所述掩膜板接地;
将电场电极通电,所述电场电极与所述掩膜板平行,所述阵列基板位于所述电场电极与所述掩膜板之间。
在本发明的发光材料蒸镀方法中,所述生成发光材料带电粒子的步骤包括:
发光材料蒸发源输出发光材料粒子;
控制所述发光材料粒子带特定极性的电荷。
在本发明的发光材料蒸镀方法中,还包括:向所述阵列基板的电路供电,以中和沉积在像素位置的所述发光材料带电粒子的电荷。
在本发明的发光材料蒸镀方法中,还包括:向设置在所述阵列基板像素定义层表面上的导电柱供电,以避免所述发光材料带电粒子沉积在所述导电柱上。
本发明实施例提供了一种显示面板,其包括:阵列基板、位于所述阵列基板上的像素定义层、位于所述像素定义层所定义像素区域内的发光材料层,所述发光材料层通过本发明提供的发光材料蒸镀方法形成。
在本发明的显示面板中,还包括设置在所述阵列基板像素定义层表面上的导电柱。
本发明实施例提供了一种发光材料蒸镀装置,其包括:
对齐模块,用于对齐掩膜板与阵列基板;
电场模块,用于生成覆盖所述阵列基板的电场;
带电离子模块,用于对发光材料进行处理,生成发光材料带电粒子;所述发光材料带电粒子穿过所述掩膜板后,在所述电场的作用下沉积在所述阵列基板的像素区域。
在本发明的发光材料蒸镀装置中,还包括电场电极,所述电场电极与所述掩膜板平行。
在本发明的发光材料蒸镀装置中,还包括供电模块,用于向所述阵列基板的电路供电,或者用于向设置在所述阵列基板像素定义层表面上的导电柱供电。
本发明的有益效果为:本发明提供一种新的发光材料蒸镀技术,其包括对齐掩膜板与阵列基板,生成覆盖阵列基板的电场,对发光材料进行处理,生成发光材料带电粒子;发光材料带电粒子穿过掩膜板后,在电场的作用下沉积在阵列基板的像素区域;这样通过提供覆盖阵列基板的电场,并生成发光材料带电粒子,这些发光材料带电粒子在穿过掩膜板后,在电场的作用下将改变运动方向,沿着电场方向垂直的向阵列基板的像素区域移动,然后均匀的沉积在阵列基板的像素区域,而不会沿原始运动方向沉积在像素临界位置,也不会沉积在其他位置,保证了发光材料的成膜均一性,解决了现有显示面板存在的子像素临界位置的发光材料成膜均一性不佳的技术问题,也解决了子像素临界位置存在色偏或混色问题。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单介绍,显而易见地,下面描述中的附图仅仅是发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为现有蒸镀工艺的示意图;
图2为本发明实施例提供的蒸镀方法的第一种流程图;
图3为本发明实施例提供的蒸镀装置的示意图;
图4为本发明实施例提供的蒸镀方法的第二种流程图;
图5为本发明实施例提供的显示面板的第一种示意图;
图6为本发明实施例提供的显示面板的第二种示意图;
图7为本发明实施例提供的显示面板的第三种示意图;
图8为本发明实施例提供的显示面板的第四种示意图。
具体实施方式
以下各实施例的说明是参考附加的图示,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。在图中,结构相似的单元是用以相同标号表示。
针对现有显示面板存在的子像素临界位置的发光材料成膜均一性不佳的技术问题,本发明能够解决该缺陷。
在一种实施例中,如图2所示,本发明实施例提供的发光材料蒸镀方法包括以下步骤:
S201:对齐掩膜板与阵列基板;
S202:生成覆盖所述阵列基板的电场;
S203:对发光材料进行处理,生成发光材料带电粒子;所述发光材料带电粒子穿过所述掩膜板后,在所述电场的作用下沉积在所述阵列基板的像素区域。
在一种实施例中,步骤S202包括:将所述掩膜板接地;将电场电极通电,所述电场电极与所述掩膜板平行,所述阵列基板位于所述电场电极与所述掩膜板之间。例如Mask接地,作为作用电场的电极,TFT基板下设置外加电场电极,在Mask跟TFT基板中间形成垂直电场,使EL材料带电粒子以垂直方式蒸镀到TFT基板表面。
在一种实施例中,步骤S203包括:发光材料蒸发源输出发光材料粒子;控制所述发光材料粒子带特定极性的电荷。例如蒸镀设备内对EL材料进行加热等处理时,蒸镀源以Electron Flux(电子通量)形式发生。
由于大量带电粒子累积到基板表面时,同性相斥,累积电荷过多,容易造成静电击伤,所以蒸镀过程中给TFT电路灌入电流,在带电粒子到达基板表面后呈电中性。因此,在一种实施例中,图2所示的方法在步骤S203之前,还包括:向所述阵列基板的电路供电,以中和沉积在像素位置的所述发光材料带电粒子的电荷。
在一种实施例中,通过阵列基板的TFT电路,向所述阵列基板的电路供电。
在一种实施例中,为了更好的增强子像素区域之间的抗干扰性,本发明还包括在所述阵列基板像素定义层表面上设置导电柱的步骤。本发明在蒸镀前,在基板表面制作柱形结构,起阻绝及支撑作用,蒸镀用的磷光材料(发光材料的一种)结构中,由于三重激态子具有较长的生命周期,容易在元件中扩散距离较长使色不纯,且发光效率低,影响寿命,增加此柱形结构在保证高的光穿透率前提下,不影响显示效果,在蒸镀过程中起阻绝蒸镀混色作用,做组装后,起阻断激态子扩散影响寿命的作用
在一种实施例中,图2所示的方法在步骤S203之前,还包括:向设置在所述阵列基板像素定义层表面上的导电柱供电,以避免所述发光材料带电粒子沉积在所述导电柱上。
在一种实施例中,将导电柱与蒸镀装置内的导电端子电连接,通过蒸镀装置内的导电端子,向导电柱供电。
在一种实施例中,如图3所示,本发明实施例提供的发光材料蒸镀装置包括:
对齐模块(图3未示出),用于采用精准对齐等方式,对齐掩膜板4与阵列基板5;一般为机械手等;
电场模块31,用于生成覆盖所述阵列基板5的电场;
带电离子模块32,用于对发光材料进行处理,生成发光材料带电粒子;所述发光材料带电粒子穿过所述掩膜板后,在所述电场的作用下沉积在所述阵列基板的像素区域。
在一种实施例中,如图3所示,带电离子模块32包括蒸镀源321以及电荷源322,蒸镀源321用于控制发光材料蒸发源输出发光材料粒子,电荷源322用于控制所述发光材料粒子带特定极性的电荷。
在一种实施例中,电荷源322为网状带电结构,发光材料粒子穿过该结构后将带电,形成发光材料带电粒子。
在一种实施例中,发光材料蒸镀装置还包括电场电极6,所述电场电极6与所述掩膜板4平行。
在一种实施例中,如图3所示,电场模块31包括接地端311以及电场电源端312,电场电源端312用于输出电场电压,在工作时,掩膜板4通过接地端311接地,电场电极6通过电场电源端312获得电场电压,在此基础上形成电场。
在一种实施例中,蒸镀装置还包括供电模块,用于向所述阵列基板的电路供电,或者用于向设置在所述阵列基板像素定义层表面上的导电柱供电。
在一种实施例中,如图4所示,本发明实施例提供的发光材料蒸镀方法包括以下步骤:
S401:提供设置有像素定义层的阵列基板。
提供如图5所示的阵列基板,像素定义层形成的区域为像素区域。
S402:如图6所示,在像素定义层上设置导电柱8。
在一种实施例中,导电柱可以是连续设置的,形成一个支撑墙。
S403:在像素区域形成阳极层。
S404:对齐掩膜板与阵列基板;
S404:生成覆盖所述阵列基板的电场,向阵列基板电路以及导电柱供电;
掩膜板4通过接地端321接地,电场电极6通过电场电源端322获得电场电压,形成电场。
S405:对发光材料进行处理,生成发光材料带电粒子;所述发光材料带电粒子穿过所述掩膜板后,在所述电场的作用下沉积在所述阵列基板的像素区域。
S406:在像素区域形成阴极层,并进行封装,得到如图7所示的显示面板。
在一种实施例中,如图7所示,本发明实施例提供的显示面板包括:
阵列基板71;在一种实施例中,阵列基板包括衬底以及设置在所述衬底上的薄膜晶体管阵列、金属走线等。
设置于所述阵列基板71上的平坦化层72;通常的,所述平坦化层72为有机层,用于平坦化所述阵列基板71。
设置于所述平坦化层上72的像素定义层73;同样的,所述像素定义层73也采用有机材料制备,可以理解的是,所述平坦化层72和所述像素定义层73可以在一道光罩工艺中进行图案化。
设置于所述像素定义层73定义区域内并贯穿所述平坦化层72与所述阵列基板71接触的OLED器件74,其中,所述定义区域指的是在制备所述像素定义层73时,所述像素定义层73之间空出的区域,用于在后续的工艺制程中在定义区域内形成有机发光材料(发光层);OLED器件74由阳极741、有机层742和阴极743组成;其中,如图8所示,有机物层742包含空穴注入层7421、空穴传输层7422、发光层7423、电子传输层7424和电子注入层7425。其中,发光层7423为采用本发明提供的蒸镀方法形成。
覆盖所述OLED器件74、所述像素定义层73以及所述阵列基板71的封装层75。
在一种实施例中,如图7所示,所述封装层75包括第一无机层751、第二无机层752以及设置在所述第一无机层751和所述第二无机层752之间的有机层753。
在一种实施例中,如图7所示,还包括设置在所述阵列基板像素定义层73表面上的导电柱8。
根据上述实施例可知:
本发明提供一种新的发光材料蒸镀技术,其包括对齐掩膜板与阵列基板,生成覆盖阵列基板的电场,对发光材料进行处理,生成发光材料带电粒子;发光材料带电粒子穿过掩膜板后,在电场的作用下沉积在阵列基板的像素区域;这样通过提供覆盖阵列基板的电场,并生成发光材料带电粒子,这些发光材料带电粒子在穿过掩膜板后,在电场的作用下将改变运动方向,沿着电场方向垂直的向阵列基板的像素区域移动,然后均匀的沉积在阵列基板的像素区域,而不会沿原始运动方向沉积在像素临界位置,也不会沉积在其他位置,保证了发光材料的成膜均一性,解决了现有显示面板存在的子像素临界位置的发光材料成膜均一性不佳的技术问题,也解决了子像素临界位置存在色偏或混色问题。
综上所述,虽然本发明已以优选实施例揭露如上,但上述优选实施例并非用以限制本发明,本领域的普通技术人员,在不脱离本发明的精神和范围内,均可作各种更动与润饰,因此本发明的保护范围以权利要求界定的范围为准。
Claims (10)
1.一种发光材料蒸镀方法,其特征在于,包括:
对齐掩膜板与阵列基板;
生成覆盖所述阵列基板的电场;
对发光材料进行处理,生成发光材料带电粒子;所述发光材料带电粒子穿过所述掩膜板后,在所述电场的作用下沉积在所述阵列基板的像素区域。
2.根据权利要求1所述的发光材料蒸镀方法,其特征在于,所述生成覆盖所述阵列基板的电场的步骤包括:
将所述掩膜板接地;
将电场电极通电,所述电场电极与所述掩膜板平行,所述阵列基板位于所述电场电极与所述掩膜板之间。
3.根据权利要求1所述的发光材料蒸镀方法,其特征在于,所述生成发光材料带电粒子的步骤包括:
发光材料蒸发源输出发光材料粒子;
控制所述发光材料粒子带特定极性的电荷。
4.根据权利要求1至3任一项所述的发光材料蒸镀方法,其特征在于,还包括:向所述阵列基板的电路供电,以中和沉积在像素位置的所述发光材料带电粒子的电荷。
5.根据权利要求4所述的发光材料蒸镀方法,其特征在于,还包括:向设置在所述阵列基板像素定义层表面上的导电柱供电,以避免所述发光材料带电粒子沉积在所述导电柱上。
6.一种显示面板,其特征在于,包括:阵列基板、位于所述阵列基板上的像素定义层、位于所述像素定义层所定义像素区域内的发光材料层,所述发光材料层通过如权利要求1至5任一项所述的发光材料蒸镀方法形成。
7.根据权利要求6所述的显示面板,其特征在于,还包括设置在所述阵列基板像素定义层表面上的导电柱。
8.一种发光材料蒸镀装置,其特征在于,包括:
对齐模块,用于对齐掩膜板与阵列基板;
电场模块,用于生成覆盖所述阵列基板的电场;
带电离子模块,用于对发光材料进行处理,生成发光材料带电粒子;所述发光材料带电粒子穿过所述掩膜板后,在所述电场的作用下沉积在所述阵列基板的像素区域。
9.根据权利要求8所述的发光材料蒸镀装置,其特征在于,还包括电场电极,所述电场电极与所述掩膜板平行。
10.根据权利要求8或9所述的发光材料蒸镀装置,其特征在于,还包括供电模块,用于向所述阵列基板的电路供电,或者用于向设置在所述阵列基板像素定义层表面上的导电柱供电。
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| CN113394262A (zh) * | 2021-08-18 | 2021-09-14 | 深圳市华星光电半导体显示技术有限公司 | 显示面板 |
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| CN108300962A (zh) * | 2018-01-30 | 2018-07-20 | 武汉华星光电半导体显示技术有限公司 | 蒸镀设备及蒸镀方法 |
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| WO2020077935A1 (zh) * | 2018-10-17 | 2020-04-23 | 武汉华星光电技术有限公司 | 显示面板、发光材料蒸镀方法以及装置 |
| US11349076B2 (en) | 2018-10-17 | 2022-05-31 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Display panel, evaporation method of luminous material and equipment |
| CN113394262A (zh) * | 2021-08-18 | 2021-09-14 | 深圳市华星光电半导体显示技术有限公司 | 显示面板 |
| CN113394262B (zh) * | 2021-08-18 | 2022-04-12 | 深圳市华星光电半导体显示技术有限公司 | 显示面板 |
| WO2023019634A1 (zh) * | 2021-08-18 | 2023-02-23 | 深圳市华星光电半导体显示技术有限公司 | 显示面板 |
| US12484430B2 (en) | 2021-08-18 | 2025-11-25 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel with electrode surrounding pixel electrode |
Also Published As
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| WO2020077935A1 (zh) | 2020-04-23 |
| US11349076B2 (en) | 2022-05-31 |
| US20200287139A1 (en) | 2020-09-10 |
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