CN109326505B - Method and device for improving final metal cleaning degree of silicon wafer - Google Patents
Method and device for improving final metal cleaning degree of silicon wafer Download PDFInfo
- Publication number
- CN109326505B CN109326505B CN201810981196.5A CN201810981196A CN109326505B CN 109326505 B CN109326505 B CN 109326505B CN 201810981196 A CN201810981196 A CN 201810981196A CN 109326505 B CN109326505 B CN 109326505B
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- Prior art keywords
- liquid medicine
- metal
- hydrofluoric acid
- filter
- cleaning
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 72
- 239000002184 metal Substances 0.000 title claims abstract description 72
- 238000004140 cleaning Methods 0.000 title claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 17
- 239000010703 silicon Substances 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims abstract description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 76
- 239000007788 liquid Substances 0.000 claims abstract description 54
- 239000003814 drug Substances 0.000 claims abstract description 47
- 239000002245 particle Substances 0.000 claims abstract description 30
- 238000004088 simulation Methods 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 4
- 238000002791 soaking Methods 0.000 claims abstract description 4
- 238000005349 anion exchange Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 4
- 239000004698 Polyethylene Substances 0.000 claims description 3
- 229920000690 Tyvek Polymers 0.000 claims description 3
- 239000000835 fiber Substances 0.000 claims description 3
- -1 polyethylene Polymers 0.000 claims description 3
- 229920000573 polyethylene Polymers 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000009434 installation Methods 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
Abstract
The invention provides a method for improving the final metal cleaning degree of a silicon wafer, which comprises the following steps: step one, adding pure water into a hydrofluoric acid liquid medicine tank for sufficient circulation for 20 minutes; step two, fully soaking the particle filter core of the particle filter and the metal filter core of the metal filter in isopropanol; step three, firstly installing a particle filter element, then filling pure water in a hydrofluoric acid liquid medicine tank, and circulating for at least three times, wherein each time is 20 minutes; step four, mounting a metal filter element, filling pure water in a hydrofluoric acid liquid medicine tank, and circulating for at least three times, wherein each time is 20 minutes; and step five, after the liquid medicine is normally added into the cleaning machine, cleaning the simulation piece for 3 hours, replacing the liquid medicine again, cleaning the simulation piece again, and testing the metal pollution condition of the simulation piece by using an inductively coupled plasma mass spectrometer.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a method and a device for improving the final metal cleaning degree of a silicon wafer.
Background
MCL (metal contamination level) of the finally delivered silicon wafer is controlled by a hydrofluoric acid liquid medicine tank for final cleaning;
the basic principle of removing metal by hydrofluoric acid is that the natural oxide film on the surface is removed by hydrofluoric acid cleaning, so that the metal adhered to the natural oxide film is dissolved in the cleaning liquid again, and the hydrofluoric acid cleaning can inhibit the formation of the natural oxide film, so that the metal on the surface can be easily removed.
The hydrofluoric acid liquid medicine groove original technology is that liquid in the liquid medicine groove enters the particle filter through the circulating pump to remove particles in the liquid and then enters the liquid medicine groove again for use, wherein the installed particle filter core only has an interception effect on the particles, and has no filtering effect on metal, especially the content of metallic aluminum on the surface of the existing silicon wafer is a key monitoring object.
At present, a hydrofluoric acid liquid medicine tank is only provided with a filter specially aiming at removing particles, and is not provided with a filter specially aiming at removing metals in cleaning liquid, so that a part of metals can be attached to the surface of a silicon wafer, and the cleaned silicon wafer is polluted again.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a device for improving the final metal cleaning degree of a silicon wafer, which aims to solve the problem that the metal cannot be removed in the conventional hydrofluoric acid liquid medicine tank.
Aiming at the problems in the prior art, the invention provides a method for improving the final metal cleaning degree of a silicon wafer, which aims to solve the problem that the metal cannot be removed in the conventional hydrofluoric acid liquid medicine tank.
The technical scheme of the invention is as follows: a method for improving the final metal cleaning degree of a silicon wafer comprises the following steps:
step one, adding pure water into a hydrofluoric acid liquid medicine tank for sufficient circulation for 20 minutes;
step two, fully soaking the particle filter core of the particle filter and the metal filter core of the metal filter in isopropanol;
step three, firstly installing a particle filter element, then filling pure water in a hydrofluoric acid liquid medicine tank, and circulating for at least three times, wherein each time is 20 minutes;
step four, mounting a metal filter element, filling pure water in a hydrofluoric acid liquid medicine tank, and circulating for at least three times, wherein each time is 20 minutes;
and step five, after the liquid medicine is normally added into the cleaning machine, cleaning the simulation piece for 3 hours, replacing the liquid medicine again, cleaning the simulation piece again, and testing the metal pollution condition of the simulation piece by using an inductively coupled plasma mass spectrometer.
According to the invention, particles in a system related to the hydrofluoric acid liquid medicine tank are intercepted by the particle filter in the step two, and metal in the system related to the hydrofluoric acid liquid medicine tank is intercepted by the metal filter in the step three.
The metal filter is made of high-density polyethylene fibers. Different from common spherical resin materials, the specific surface area is effectively increased and the method is suitable for hydrofluoric acid solution.
The metal filter core adopts an anion exchange type filter core. The anion exchange type filter element has good effect of removing the metal aluminum.
The flow sequence of the liquid medicine in the step five is a circulating pump, a metal filter, a particle filter and a liquid medicine groove in sequence.
The utility model provides an improve silicon chip and finally wash device of metal degree which characterized in that, is including the hydrofluoric acid liquid medicine groove of placing the liquid medicine, a circulating pump is connected to the hydrofluoric acid liquid medicine groove, metal filter is connected to the circulating pump, particle filter is connected to metal filter, particle filter connects the hydrofluoric acid liquid medicine groove, metal filter's shell is made by the polyethylene fiber, metal filter's filter core is anion exchange type filter core.
Drawings
FIG. 1 is a graph of the present invention showing the collection of aluminum metal data before and after installation of a metal filter;
FIG. 2 is a control chart of I-MR analysis of aluminum metal according to the present invention;
FIG. 3 is a schematic view of the structure of the device of the present invention.
In the figure: 1. hydrofluoric acid liquid medicine groove, 2 circulating pump, 3 metal filter, 4 particulate filter.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
A method for improving the final metal cleaning degree of a silicon wafer comprises the following steps:
step one, adding pure water into a hydrofluoric acid liquid medicine tank for sufficient circulation for 20 minutes; step two, fully soaking the particle filter core of the particle filter and the metal filter core of the metal filter in isopropanol; step three, firstly installing a particle filter element, then filling pure water in a hydrofluoric acid liquid medicine tank, and circulating for at least three times, wherein each time is 20 minutes; step four, mounting a metal filter element, filling pure water in a hydrofluoric acid liquid medicine tank, and circulating for at least three times, wherein each time is 20 minutes; and step five, after the liquid medicine is normally added into the cleaning machine, cleaning the simulation piece for 3 hours, replacing the liquid medicine again, cleaning the simulation piece again, and testing the metal pollution condition of the simulation piece by using an inductively coupled plasma mass spectrometer. According to the invention, particles in a system related to the hydrofluoric acid liquid medicine tank are intercepted by the particle filter in the step two, and metal in the system related to the hydrofluoric acid liquid medicine tank is intercepted by the metal filter in the step three. The flow sequence of the liquid medicine in the step five is a circulating pump, a metal filter, a particle filter and a liquid medicine groove in sequence.
The material of the metal filter is high-density polyethylene fiber. Different from common spherical resin materials, the specific surface area is effectively increased and the method is suitable for hydrofluoric acid solution. The metal filter core adopts an anion exchange type filter core. The anion exchange type filter element has good effect of removing the metal aluminum.
The anion exchange type filter element can effectively remove metal aluminum, and when the metal filter element is soaked in hydrofluoric acid with the concentration of 5 wt% for 24 hours at room temperature, the metal content in the hydrofluoric acid solution is as follows:
it can be seen that the removal effect of the metal aluminum is very good, and the detection value is zero;
referring to fig. 1, the conclusion is reached:
1. the average value after installation is 0.66E10atom/cm2 < 0.94E10atom/cm2 before installation;
2. the number of abnormal high values after installation is obviously less than that before installation, and the data concentration ratio is high;
referring to fig. 2, it is concluded that:
after the metal filter is installed, the control upper limit value of aluminum has a descending trend, the overall data is stable compared with the previous data, and the frequency of abnormal values is relatively reduced.
Referring to fig. 3, the device for improving the final metal cleaning degree of the silicon wafer comprises a hydrofluoric acid liquid tank 1 for containing a liquid medicine, wherein the hydrofluoric acid liquid tank is connected with a circulating pump 2, the circulating pump is connected with a metal filter 3, the metal filter is connected with a particle filter 4, the particle filter is connected with the hydrofluoric acid liquid tank, a shell of the metal filter is made of polyethylene fibers, and a filter core of the metal filter is an anion exchange type filter core.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that it is obvious to those skilled in the art that various modifications and improvements can be made without departing from the principle of the present invention, and these modifications and improvements should also be considered as the protection scope of the present invention.
Claims (3)
1. A method for improving the final metal cleaning degree of a silicon wafer is characterized by comprising the following steps:
step one, adding pure water into a hydrofluoric acid liquid medicine tank for sufficient circulation for 20 minutes;
step two, fully soaking the particle filter core of the particle filter and the metal filter core of the metal filter in isopropanol;
step three, firstly installing a particle filter element, then filling pure water in a hydrofluoric acid liquid medicine tank, and circulating for at least three times, wherein each time is 20 minutes;
step four, mounting a metal filter element, filling pure water in a hydrofluoric acid liquid medicine tank, and circulating for at least three times, wherein each time is 20 minutes;
step five, after the cleaning machine normally adds the liquid medicine, cleaning the simulation piece for 3 hours, then replacing the liquid medicine again, cleaning the simulation piece again, and testing the metal pollution condition of the simulation piece by using an inductively coupled plasma mass spectrometer;
the metal filter core adopts an anion exchange type filter core;
the flow sequence of the liquid medicine in the step five is a circulating pump, a metal filter, a particle filter and a liquid medicine groove in sequence.
2. The method for improving the final metal cleaning degree of the silicon wafer as claimed in claim 1, wherein the material of the metal filter is high-density polyethylene fiber.
3. The utility model provides an improve silicon chip and finally wash device of metal degree which characterized in that, is including the hydrofluoric acid liquid medicine groove of placing the liquid medicine, a circulating pump is connected to the hydrofluoric acid liquid medicine groove, metal filter is connected to the circulating pump, particle filter is connected to metal filter, particle filter connects the hydrofluoric acid liquid medicine groove, metal filter's shell is made by the polyethylene fiber, metal filter's filter core is anion exchange type filter core.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810981196.5A CN109326505B (en) | 2018-08-27 | 2018-08-27 | Method and device for improving final metal cleaning degree of silicon wafer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810981196.5A CN109326505B (en) | 2018-08-27 | 2018-08-27 | Method and device for improving final metal cleaning degree of silicon wafer |
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| CN109326505A CN109326505A (en) | 2019-02-12 |
| CN109326505B true CN109326505B (en) | 2021-12-03 |
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| CN201810981196.5A Active CN109326505B (en) | 2018-08-27 | 2018-08-27 | Method and device for improving final metal cleaning degree of silicon wafer |
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| CN110323164B (en) * | 2019-07-05 | 2022-03-18 | 西安奕斯伟材料科技有限公司 | Silicon wafer cleaning device and silicon wafer cleaning method |
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Inventor after: Zhao Jianfeng Inventor after: He Xianhan Inventor after: Hong Yi Inventor after: Kazuo Sugihara Inventor before: Zhao Jianfeng Inventor before: He Xianhan Inventor before: Hong Yi Inventor before: Kazuo Sugihara |
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Effective date of registration: 20191223 Address after: 200444 Building 1, No. 181, Shanlian Road, Baoshan District, Shanghai Applicant after: Shanghai xinxinjingyuan Semiconductor Technology Co., Ltd Applicant after: Hangzhou Zhongxin Wafer Semiconductor Co., Ltd. Address before: 200444 Baoshan District, Baoshan City Industrial Park Road, No., Hill Road, No. 181 Applicant before: Shanghai Shenhe Thermo-magenetic Electronic Co., Ltd. Applicant before: Hangzhou Zhongxin Wafer Semiconductor Co., Ltd. |
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Address after: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Applicant after: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. Applicant after: HANGZHOU ZHONGXIN WAFER SEMICONDUCTOR Co.,Ltd. Address before: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Applicant before: Shanghai xinxinjingyuan Semiconductor Technology Co.,Ltd. Applicant before: HANGZHOU ZHONGXIN WAFER SEMICONDUCTOR Co.,Ltd. |
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Address after: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Applicant after: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. Applicant after: Hangzhou Zhongxin wafer semiconductor Co.,Ltd. Address before: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Applicant before: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. Applicant before: HANGZHOU ZHONGXIN WAFER SEMICONDUCTOR Co.,Ltd. |
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