CN109273568A - Gallium nitride based light emitting diode epitaxial wafer and manufacturing method thereof - Google Patents
Gallium nitride based light emitting diode epitaxial wafer and manufacturing method thereof Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 121
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 230000012010 growth Effects 0.000 claims abstract description 289
- 238000006243 chemical reaction Methods 0.000 claims abstract description 195
- 239000004065 semiconductor Substances 0.000 claims abstract description 185
- 230000003698 anagen phase Effects 0.000 claims abstract description 120
- 238000012545 processing Methods 0.000 claims abstract description 110
- 239000000758 substrate Substances 0.000 claims abstract description 76
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 71
- 239000001257 hydrogen Substances 0.000 claims abstract description 71
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 71
- 239000000376 reactant Substances 0.000 claims abstract description 43
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 209
- 239000002019 doping agent Substances 0.000 claims description 123
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 107
- 229910052733 gallium Inorganic materials 0.000 claims description 107
- 229910021529 ammonia Inorganic materials 0.000 claims description 103
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 51
- 229910052782 aluminium Inorganic materials 0.000 claims description 44
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 44
- 230000000903 blocking effect Effects 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 abstract description 151
- 239000013078 crystal Substances 0.000 abstract description 19
- 238000002360 preparation method Methods 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 83
- 229910052710 silicon Inorganic materials 0.000 description 83
- 239000010703 silicon Substances 0.000 description 83
- 239000004411 aluminium Substances 0.000 description 36
- 239000000463 material Substances 0.000 description 22
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 230000005611 electricity Effects 0.000 description 7
- 238000000465 moulding Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
- 238000005215 recombination Methods 0.000 description 6
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- -1 indium aluminum nitrogen Chemical compound 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
- H10H20/8162—Current-blocking structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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Abstract
The invention discloses a kind of gallium nitride based LED epitaxial slices and preparation method thereof, belong to technical field of semiconductors.Production method includes: to provide a substrate and place substrate in the reactor chamber；N type semiconductor layer and active layer are successively grown on substrate；Discontinuity grows electronic barrier layer on active layer；Wherein, discontinuity growth includes the multiple growth cycles successively occurred, and each growth cycle includes growth phase and the processing stage occurred after growth phase；Continue the whole for being passed through growth electronic barrier layer into reaction chamber when growth phase, grows electronic barrier layer；Stop some or all of reactant for being passed through growth electronic barrier layer into reaction chamber when processing stage, and continue to be passed through hydrogen into reaction chamber, removes the reactant remained on surface of electronic barrier layer；The growing P-type semiconductor layer on electronic barrier layer.The present invention keeps the interface of electronic barrier layer and p type semiconductor layer clear, promotes the crystal quality of epitaxial wafer entirety.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of gallium nitride based LED epitaxial slice and its production
Method.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is a kind of semi-conductor electricity that can be luminous
Subcomponent.LED is widely paid close attention to because having many advantages, such as energy conservation and environmental protection, high reliablity, long service life, is being carried on the back in recent years
Scape light source and field of display screen yield unusually brilliant results, and start to march to domestic lighting market.Since domestic lighting lays particular emphasis on product
Power and energy saving and service life, therefore reduce LED series resistance and improve LED antistatic effect seem particularly critical.
Epitaxial wafer is the primary finished product in LED preparation process.Existing LED epitaxial wafer include substrate, n type semiconductor layer,
Active layer and p type semiconductor layer, n type semiconductor layer, active layer and p type semiconductor layer stack gradually on substrate.P-type semiconductor
Layer carries out the hole of recombination luminescence for providing, and n type semiconductor layer is used to provide the electronics for carrying out recombination luminescence, and active layer is used for
The radiation recombination for carrying out electrons and holes shines, and substrate is used to provide growing surface for epitaxial material.
The electron amount that N-type semiconductor provides is much larger than the number of cavities of p type semiconductor layer, in addition the volume of electronics is far small
Volume in hole causes the electron amount injected in active layer much larger than number of cavities.In order to avoid n type semiconductor layer offer
Electron transfer into p type semiconductor layer with hole carry out non-radiative recombination, it will usually between active layer and p type semiconductor layer
Electronic barrier layer is set, electronics can be stopped to transit to p type semiconductor layer from active layer.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
The material of n type semiconductor layer uses the gallium nitride of n-type doping (such as silicon), and the material of p type semiconductor layer is mixed using p-type
The gallium nitride of miscellaneous (such as magnesium)；Active layer includes that alternately stacked multiple Quantum Well and multiple quantum are built, and the material of Quantum Well uses
Mixed with the gallium nitride of phosphide element, the material that quantum is built uses undoped gallium nitride；The material of electronic barrier layer is adulterated using p-type
Aluminium gallium nitride alloy；I.e. n type semiconductor layer, active layer, p type semiconductor layer are the gallium nitride layer for adulterating different elements.It is two neighboring
There is interface between each other due to the difference of doped chemical in gallium nitride layer.There are the diffusion of doped chemical, diffusions at interface
Direction is usually as epitaxial growth direction, i.e., gallium nitride that the doped chemical in gallium nitride layer first grown is grown after being diffused into
In layer.It is unintelligible that the diffusion of doped chemical will cause interface, is easy to produce defect, causes to the growth quality of epitaxial wafer bad
It influences.
By taking the interface of electronic barrier layer and p type semiconductor layer as an example, p type semiconductor layer is grown on electronic barrier layer,
Therefore the aluminium element adulterated in electronic barrier layer can be diffused into active layer, cause the friendship of electronic barrier layer and p type semiconductor layer
Interface is unintelligible, and the interface of electronic barrier layer and p type semiconductor layer is easy to produce defect, influences p type semiconductor layer offer
Recombination luminescence is carried out in hole injection active layer, the final luminous efficiency for reducing LED.
Summary of the invention
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice and preparation method thereof, it is able to solve existing
There is the problem of luminous efficiency of the unintelligible influence LED of the interface of technology electronic barrier layer and p type semiconductor layer.The technical side
Case is as follows:
On the one hand, described the embodiment of the invention provides a kind of production method of gallium nitride based LED epitaxial slice
Production method includes:
One substrate is provided and places the substrate in the reactor chamber；
N type semiconductor layer and active layer are successively grown over the substrate；
Discontinuity grows electronic barrier layer on the active layer；Wherein, the discontinuity growth includes successively occurring
Multiple growth cycles, each growth cycle include growth phase and processing stage for occurring after the growth phase；
Continue to be passed through the whole for growing the electronic barrier layer into the reaction chamber when growth phase, grows the electricity
Sub- barrier layer；Stop being passed through some or all of of the growth electronic barrier layer into the reaction chamber when processing stage
Reactant, and continue to be passed through hydrogen into the reaction chamber, remove the reactant remained on surface of the electronic barrier layer；
The growing P-type semiconductor layer on the electronic barrier layer.
Optionally, continue to be passed through all anti-of the growth electronic barrier layer into the reaction chamber when growth phase
Object is answered, the electronic barrier layer is grown, comprising:
Continue to be passed through silicon source, gallium source, ammonia and P-type dopant into the reaction chamber, forms the aluminium gallium nitride alloy of p-type doping
Layer.
In a kind of possible implementation of the embodiment of the present invention, when processing stage, stops leading into the reaction chamber
Enter to grow some or all of reactant of the electronic barrier layer, and continue to be passed through hydrogen into the reaction chamber, removes institute
State the reactant remained on surface of electronic barrier layer, comprising:
Stop being passed through silicon source, gallium source and P-type dopant into the reaction chamber, continues to be passed through ammonia into the reaction chamber
Gas, while continuing to be passed through hydrogen into the reaction chamber, remove the aluminium remained on surface of the aluminum gallium nitride of the p-type doping
Source.
In the alternatively possible implementation of the embodiment of the present invention, when processing stage, stops into the reaction chamber
It is passed through some or all of reactant for growing the electronic barrier layer, and continues to be passed through hydrogen into the reaction chamber, is removed
The reactant remained on surface of the electronic barrier layer, comprising:
Stop being passed through silicon source, ammonia and P-type dopant into the reaction chamber, continues to be passed through gallium into the reaction chamber
Source, while continuing to be passed through hydrogen into the reaction chamber, remove the aluminium remained on surface of the aluminum gallium nitride of the p-type doping
Source.
In the embodiment of the present invention in another possible implementation, when processing stage, stops into the reaction chamber
It is passed through some or all of reactant for growing the electronic barrier layer, and continues to be passed through hydrogen into the reaction chamber, is removed
The reactant remained on surface of the electronic barrier layer, comprising:
Stop being passed through silicon source, gallium source, ammonia and P-type dopant into the reaction chamber, while continuing to the reaction chamber
It is inside passed through hydrogen, removes the silicon source remained on surface of the aluminum gallium nitride of the p-type doping.
Preferably, the flow that is passed through of source of aluminium is 20sccm~500sccm, and the flow that is passed through in the gallium source is
The flow that is passed through of 200sccm~900sccm, the ammonia are 5L/min~50L/min, and the P-type dopant is passed through flow
For 50sccm~800sccm.
It is highly preferred that the flow that is passed through of the hydrogen is 5L/min~100L/min.
Further, the duration of the processing stage is 5s~15s.
Optionally, the growing P-type semiconductor layer on the electronic barrier layer, comprising:
The discontinuity growing P-type semiconductor layer on the electronic barrier layer.
On the other hand, the embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, the gallium nitride bases
LED epitaxial slice includes substrate, n type semiconductor layer, active layer, electronic barrier layer and p type semiconductor layer, the N-type half
Conductor layer, the active layer, the electronic barrier layer and the p type semiconductor layer stack gradually over the substrate, the electricity
Sub- barrier layer includes the multiple sublayers stacked gradually, and the surface of each sublayer is the surface using hydrogen treat.
Technical solution provided in an embodiment of the present invention has the benefit that
Electronic barrier layer is grown by using the multiple growth cycle discontinuity successively occurred, each growth cycle includes life
Long stage and processing stage continue the whole that growth electronic barrier layer is passed through into reaction chamber when growth phase, can be with
Carry out the growth of electronic barrier layer；Stop being passed through growth electronics resistance into reaction chamber when the processing stage occurred after growth phase
Some or all of barrier reactant, and continue to be passed through hydrogen into reaction chamber, the growth of electronic barrier layer can be stopped, simultaneously
Being conducive to the longer free path of atom acquisition makes electronic blocking to remove the reactant remained on surface of electronic barrier layer as early as possible
The surface of layer leaves behind molding crystal, avoids unreacted reactant from being diffused into the crystal of subsequent growth, makes electronics
The interface of barrier layer and p type semiconductor layer is clear, reduces the defect that interface generates, and promotes the crystal matter of epitaxial wafer entirety
Amount improves the mobility in hole, increases the combined efficiency in hole and electronics in active layer, the final luminous efficiency for improving LED.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of process of the production method of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention
Figure；
Fig. 2 is that each gas flow one kind in reaction chamber is passed through in electronic barrier layer growth course provided in an embodiment of the present invention
The schematic diagram of variation pattern；
Fig. 3 is that each gas flow in reaction chamber is passed through in electronic barrier layer growth course provided in an embodiment of the present invention is another
The schematic diagram of kind variation pattern；
Fig. 4 is that each gas flow in reaction chamber is passed through in electronic barrier layer growth course provided in an embodiment of the present invention is another
The schematic diagram of kind variation pattern；
Fig. 5 is a kind of structural schematic diagram of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slices.Fig. 1 provides for the embodiment of the present invention
A kind of gallium nitride based LED epitaxial slice production method flow chart.Referring to Fig. 1, which includes:
Step 101: a substrate being provided and places substrate in the reactor chamber.
Specifically, the material of substrate can use sapphire (main material is aluminum oxide), if crystal orientation is [0001]
Sapphire.
Optionally, after step 101, which can also include:
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), in hydrogen atmosphere to substrate carry out 1 minute~
It makes annealing treatment within 10 minutes (preferably 5 minutes)；
Nitrogen treatment is carried out to substrate.
The surface for cleaning substrate through the above steps avoids being conducive to the life for improving epitaxial wafer in impurity incorporation epitaxial wafer
Long quality.
Step 102: successively growing n type semiconductor layer and active layer on substrate.
Specifically, the material of n type semiconductor layer can use the gallium nitride of n-type doping (such as silicon).Active layer may include
Multiple Quantum Well and multiple quantum are built, and multiple Quantum Well and multiple quantum build alternately laminated setting；The material of Quantum Well can be adopted
With InGaN (InGaN), such as InxGa1-xN, 0 < x < 1, the material that quantum is built can use gallium nitride.
Further, the thickness of n type semiconductor layer can be 1 μm~3 μm, preferably 2 μm；N-type is mixed in n type semiconductor layer
Miscellaneous dose of doping concentration can be 1018/cm3~3*1019/cm3, preferably 6*1018/cm3.The thickness of Quantum Well can be 3nm
~4nm, preferably 3.5nm；The thickness that quantum is built can be 9nm~20nm, preferably 15nm；The quantity and quantum of Quantum Well are built
Quantity it is identical, quantum build quantity can be 5~11, preferably 8.
Specifically, which may include:
Controlled at 1000 DEG C~1100 DEG C (preferably 1050 DEG C), pressure be 100torr~500torr (preferably
300torr), n type semiconductor layer is grown on substrate.
Active layer is grown on n type semiconductor layer；Wherein, the growth temperature of Quantum Well be 720 DEG C~829 DEG C (preferably
760 DEG C), pressure is 100torr~500torr (preferably 300torr)；The growth temperature that quantum is built is 850 DEG C~959 DEG C
(preferably 900 DEG C), pressure are 100torr~500torr (preferably 300torr).
Optionally, before step 102, which can also include:
Grown buffer layer on substrate.
Alleviate the stress and defect that lattice mismatch generates between substrate material and gallium nitride by buffer layer, and is gallium nitride
Material epitaxy growth provides nuclearing centre
Correspondingly, n type semiconductor layer is grown on the buffer layer.
Specifically, the material of buffer layer can use gallium nitride.
Further, the thickness of buffer layer can be 15nm~40nm, preferably 25nm.
Specifically, grown buffer layer on substrate may include:
Controlled at 400 DEG C~600 DEG C (preferably 500 DEG C), pressure be 400torr~600torr (preferably
500torr), grown buffer layer on substrate；
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure be 400torr~600torr (preferably
500torr), the in-situ annealing carried out 5 minutes~10 minutes (preferably 8 minutes) to buffer layer is handled.
Preferably, on substrate after grown buffer layer, which can also include:
Undoped gallium nitride layer is grown on the buffer layer.
Further alleviated by undoped gallium nitride layer stress that lattice mismatch between substrate material and gallium nitride generates and
Defect provides crystal quality preferable growing surface for epitaxial wafer main structure.
Correspondingly, n type semiconductor layer is grown on undoped gallium nitride layer.
In specific implementation, buffer layer is the gallium nitride of the layer of low-temperature epitaxy first in patterned substrate, because
This is also referred to as low temperature buffer layer.The longitudinal growth for carrying out gallium nitride in low temperature buffer layer again, will form multiple mutually independent three
Island structure is tieed up, referred to as three-dimensional nucleating layer；Then it is carried out between each three-dimensional island structure on all three-dimensional island structures
The cross growth of gallium nitride forms two-dimension plane structure, referred to as two-dimentional retrieving layer；The finally high growth temperature one on two-dimensional growth layer
The thicker gallium nitride of layer, referred to as intrinsic gallium nitride layer.By three-dimensional nucleating layer, two-dimentional retrieving layer and intrinsic gallium nitride in the present embodiment
Layer is referred to as undoped gallium nitride layer.
Further, the thickness of three-dimensional nucleating layer can be 100nm~600nm, preferably 350nm；Two-dimentional retrieving layer
Thickness can be 500nm~800nm, preferably 650nm；The thickness of intrinsic gallium nitride layer can be 800nm~2 μm, preferably
1.4μm。
Specifically, undoped gallium nitride layer is grown on the buffer layer, may include:
Controlled at 1000 DEG C~1100 DEG C (preferably 1050 DEG C), pressure be 100torr~600torr (preferably
300torr), growing three-dimensional nucleating layer, growth time are 10min~20min on the buffer layer；
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure be 100torr~500torr (preferably
300torr), two-dimentional retrieving layer is grown on three-dimensional nucleating layer, growth time is 10min~20min, growth time 20min
~40min；
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure be 100torr~500torr (preferably
300torr), intrinsic gallium nitride layer is grown in two-dimentional retrieving layer.
Optionally, before growing active layer on n type semiconductor layer, which can also include:
The growth stress releasing layer on n type semiconductor layer.
It is discharged, is improved active by the stress that stress release layer generates lattice mismatch between sapphire and gallium nitride
The crystal quality of layer is conducive to electrons and holes and shines in active layer progress radiation recombination, improves the internal quantum efficiency of LED, into
And improve the luminous efficiency of LED.
Correspondingly, active layer is grown on stress release layer.
Specifically, the material of stress release layer can use gallium indium aluminum nitrogen (AlInGaN), can be released effectively sapphire and
The stress that gallium nitride crystal lattice mismatch generates, improves the crystal quality of epitaxial wafer, improves the luminous efficiency of LED.
Preferably, the molar content of aluminium component can be less than or equal to 0.2 in stress release layer, indium group in stress release layer
The molar content divided can be less than or equal to 0.05, to avoid adverse effect is caused.
Further, the thickness of stress release layer can be 50nm~500nm, preferably 300nm.
Specifically, the growth stress releasing layer on n type semiconductor layer may include:
Controlled at 800 DEG C~1100 DEG C (preferably 950 DEG C), pressure be 100torr~500torr (preferably
300torr), the growth stress releasing layer on n type semiconductor layer.
Step 103: discontinuity grows electronic barrier layer on active layer.
In the present embodiment, discontinuity growth includes the multiple growth cycles successively occurred, and each growth cycle includes life
Long stage and the processing stage occurred after growth phase.Continue to be passed through growth electronic blocking into reaction chamber when growth phase
The whole of layer grows electronic barrier layer.Stop the portion that growth electronic barrier layer is passed through into reaction chamber when processing stage
Point or the whole, and continue hydrogen is passed through into reaction chamber, remove the reactant remained on surface of electronic barrier layer.
The embodiment of the present invention grows electronic barrier layer, Mei Gesheng by using the multiple growth cycle discontinuity successively occurred
Long period includes growth phase and processing stage, and when growth phase continues the whole that growth electronic barrier layer is passed through into reaction chamber
Reactant can carry out the growth of electronic barrier layer；Stop leading into reaction chamber when the processing stage occurred after growth phase
Enter to grow some or all of electronic barrier layer reactant, and continue to be passed through hydrogen into reaction chamber, electronic blocking can be stopped
The growth of layer, while being conducive to atom and obtaining longer free path, to remove the reaction remained on surface of electronic barrier layer as early as possible
Object makes the surface of electronic barrier layer leave behind molding crystal, unreacted reactant is avoided to be diffused into subsequent growth
In crystal, keep the interface of electronic barrier layer and p type semiconductor layer clear, reduce the defect that interface generates, promotes epitaxial wafer
Whole crystal quality improves the mobility in hole, increases the combined efficiency in hole and electronics in active layer, finally improves LED
Luminous efficiency.And processing stage and growth phase are alternately present, and are conducive to aluminium element and are evenly distributed in electronic barrier layer,
It avoids the too high levels of local aluminium element and influences to reduce the luminous efficiency of LE in hole injection active layer.
Specifically, the material of electronic barrier layer can be using the aluminium gallium nitride alloy (AlGaN) of p-type doping, such as AlyGa1-yN,
0.1 < y < 0.5.
Optionally, continue the whole that growth electronic barrier layer is passed through into reaction chamber, growth electricity when growth phase
Sub- barrier layer may include:
Continue to be passed through silicon source, gallium source, ammonia and P-type dopant into reaction chamber, forms the aluminum gallium nitride of p-type doping.
In a kind of implementation of the present embodiment, when processing stage, stops being passed through growth electronic barrier layer into reaction chamber
Some or all of reactant, and continue hydrogen is passed through into reaction chamber, remove the reaction remained on surface of electronic barrier layer
Object may include:
Stop being passed through silicon source, gallium source and P-type dopant into reaction chamber, continues to be passed through ammonia into reaction chamber, hold simultaneously
Continue and is passed through hydrogen into reaction chamber, the silicon source remained on surface of the aluminum gallium nitride of removal p-type doping.
When processing stage while being passed through hydrogen into reaction chamber, it is also passed through ammonia into reaction chamber, ammonia can be to prevent
The only surface of the aluminum gallium nitride of hydrogen etching p-type doping avoids molding crystal decomposition, the aluminium gallium nitride alloy of p-type doping
The profile pattern of layer is good.And ammonia is cheap, and the influence to production cost can be ignored.
Fig. 2 is to be passed through each a kind of schematic diagram of variation pattern of gas flow in reaction chamber in electronic barrier layer growth course.
Referring to fig. 2, growth phase and processing stage are alternately present in the growth course of electronic barrier layer.Silicon source, gallium when growth phase
The flow of source and P-type dopant is greater than 0, and the flow of silicon source, gallium source and P-type dopant is 0, i.e. silicon source, gallium source when processing stage
It is only passed through in reaction chamber in growth phase with P-type dopant.The flow of ammonia is all larger than 0 when growth phase and processing stage, i.e.,
Ammonia is passed through in reaction chamber in growth phase and processing stage.The flow of growth phase hydrogen is 0, the stream of processing stage hydrogen
Amount is greater than 0, i.e. hydrogen is only passed through in reaction chamber in processing stage.
In another implementation of the present embodiment, when processing stage, stops being passed through growth electronic blocking into reaction chamber
The some or all of reactant of layer, and continue to be passed through hydrogen into reaction chamber, remove the remained on surface anti-of electronic barrier layer
Object is answered, may include:
Stop being passed through silicon source, ammonia and P-type dopant into reaction chamber, continues to be passed through gallium source into reaction chamber, hold simultaneously
Continue and is passed through hydrogen into reaction chamber, the silicon source remained on surface of the aluminum gallium nitride of removal p-type doping.
When processing stage while being passed through hydrogen into reaction chamber, it is also passed through gallium source into reaction chamber, gallium source can be to prevent
The only surface of the aluminum gallium nitride of hydrogen etching p-type doping avoids molding crystal decomposition, the aluminium gallium nitride alloy of p-type doping
The profile pattern of layer is good.
Fig. 3 is the signal that each gas flow another kind variation pattern in reaction chamber is passed through in electronic barrier layer growth course
Figure.Referring to Fig. 3, growth phase and processing stage are alternately present in the growth course of electronic barrier layer.Silicon source when growth phase,
Ammonia and the flow of P-type dopant are greater than 0, and the flow of silicon source, ammonia and P-type dopant is 0, i.e. silicon source, ammonia when processing stage
Gas and P-type dopant are only passed through in reaction chamber in growth phase.The flow in gallium source is all larger than 0 when growth phase and processing stage,
I.e. gallium source is passed through in reaction chamber in growth phase and processing stage.The flow of growth phase hydrogen is 0, processing stage hydrogen
Flow is greater than 0, i.e. hydrogen is only passed through in reaction chamber in processing stage.
In another implementation of the present embodiment, when processing stage, stops being passed through growth electronic blocking into reaction chamber
The some or all of reactant of layer, and continue to be passed through hydrogen into reaction chamber, remove the remained on surface anti-of electronic barrier layer
Object is answered, may include:
Stop being passed through silicon source, gallium source, ammonia and P-type dopant into reaction chamber, while continuing to be passed through hydrogen into reaction chamber
Gas, the silicon source remained on surface of the aluminum gallium nitride of removal p-type doping.
Hydrogen is only passed through into reaction chamber when processing stage, cost of implementation is minimum.
Fig. 4 is the signal that each another variation pattern of gas flow in reaction chamber is passed through in electronic barrier layer growth course
Figure.Referring to fig. 4, growth phase and processing stage are alternately present in the growth course of electronic barrier layer.Silicon source when growth phase,
The flow in gallium source, ammonia and P-type dopant is greater than 0, silicon source when processing stage, gallium source, ammonia and P-type dopant flow be 0,
I.e. silicon source, gallium source, ammonia and P-type dopant are only passed through in reaction chamber in growth phase.The flow of growth phase hydrogen is 0, place
The flow of reason stage hydrogen is greater than 0, i.e. hydrogen is only passed through in reaction chamber in processing stage.
Optionally, the flow that is passed through of silicon source can be 20sccm~500sccm, preferably 260sccm；Gallium source is passed through stream
Amount can be 200sccm~900sccm, preferably 550sccm；The flow that is passed through of ammonia can be 5L/min~50L/min, excellent
It is selected as 30L/min；The flow that is passed through of P-type dopant can be 50sccm~800sccm, preferably 400sccm.
It is passed through flow by matching silicon source, gallium source, ammonia and P-type dopant, makes aluminium element and p-type in electronic barrier layer
The doping concentration of dopant is in OK range.
Further, the content of aluminium component can be 0.1~0.5, preferably 0.3 in electronic barrier layer.
If the content of aluminium component is less than 0.1 in electronic barrier layer, may due in electronic barrier layer aluminium component contain
It measures lower and can not effectively stop electron transition into p type semiconductor layer, LED chip is caused to leak electricity；If in electronic barrier layer
The content of aluminium component is greater than 0.5, then hole injection may be stopped active since the content of aluminium component in electronic barrier layer is higher
In layer, the luminous efficiency of LED is reduced.
Further, the doping concentration of P-type dopant can be 10 in electronic barrier layer18/cm3~1020/cm3, preferably
1019/cm3。
It, may be due to p-type doping in electronic barrier layer if the doping concentration of P-type dopant is lower than in electronic barrier layer
The doping concentration of agent is lower and influences in hole injection active layer, reduces the combined efficiency in hole and electronics in active layer, finally
Reduce the luminous efficiency of LED；It, may be due to electronic blocking if the doping concentration of P-type dopant is higher than in electronic barrier layer
The doping concentration of P-type dopant is higher and cause the crystal quality of electronic barrier layer poor in layer, influence in active layer electronics and
The combined efficiency in hole, the final luminous efficiency for reducing LED.
Preferably, the flow that is passed through of hydrogen can be 5L/min~100L/min, preferably 50L/min.
If hydrogen is passed through flow less than 5L/min, may due to hydrogen to be passed through flow less and can not quickly go
Except the reactant remained on surface of the aluminum gallium nitride of p-type doping；If the flow that is passed through of hydrogen is greater than 100L/min, may
Due to hydrogen to be passed through flow more and etch the surface of the aluminum gallium nitride of p-type doping, it is brilliant to decompose molding gallium nitride
The rough surface of body, the aluminum gallium nitride for causing p-type to adulterate is uneven, influences the growth of subsequent semiconductor layer.
Further, the duration of processing stage can be 5s~15s, preferably 10s or 12s.
If the duration of processing stage is less than 5s, may can not have since the duration of processing stage is shorter
The reactant remained on surface of the aluminum gallium nitride of effect removal p-type doping；If the duration of processing stage is greater than 15s,
It may be decomposed due to the surface for the aluminum gallium nitride that the duration of processing stage is longer and hydrogen etching p-type is caused to adulterate
Through molding gallium nitride, the rough surface for the aluminum gallium nitride for causing p-type to adulterate is uneven, influences the life of subsequent semiconductor layer
It is long.
Optionally, the duration of growth phase can be 10s~50s, preferably 30s.
If the duration of growth phase is less than 10s, may be caused since the duration of growth phase is shorter
The quantity of growth cycle is too many, influences production efficiency；It, may be due to growth if the duration of growth phase is greater than 50s
Stage continues longer and part reactant is not removed in time, and remaining reactant can be spread in electronic barrier layer,
Aluminium element is unevenly distributed in electronic barrier layer, is influenced in hole injection active layer, the final luminous efficiency for reducing LED.
Further, the thickness of the aluminum gallium nitride for the p-type doping that growth phase is formed can be 2nm~9nm, preferably
6nm。
If the thickness of the aluminum gallium nitride for the p-type doping that growth phase is formed is less than 2nm, may be due to growth phase
The aluminum gallium nitride of the p-type doping of formation is too thin and causes the quantity of growth cycle too many, influences production efficiency；If growth step
The thickness of the aluminum gallium nitride for the p-type doping that section is formed is greater than 9nm, then may be due to the nitrogen for the p-type doping that growth phase is formed
Change gallium aluminium layer is too thick and part reactant is not removed in time, and remaining reactant can be spread in electronic barrier layer, aluminium
Element is unevenly distributed in electronic barrier layer, is influenced in hole injection active layer, the final luminous efficiency for reducing LED.
Preferably, the quantity of growth cycle can be 10~50, preferably 30.
If the quantity of growth cycle less than 10, may due to growth cycle negligible amounts and part is reacted
Object does not remove in time, and remaining reactant can be spread in electronic barrier layer, and aluminium element is unevenly distributed in electronic barrier layer
It is even, it influences in hole injection active layer, the final luminous efficiency for reducing LED；If the quantity of growth cycle is greater than 50, can
Production efficiency can be reduced since the quantity of growth cycle is more.
Further, the thickness of electronic barrier layer can be 20nm~150nm, preferably 90nm.
If the thickness of electronic barrier layer is less than 20nm, it can not may effectively stop electricity since electronic barrier layer is too thin
Son transits in p type semiconductor layer, and LED chip is caused to leak electricity；It, may be by if the thickness of electronic barrier layer is greater than 150nm
It is too thick in electronic barrier layer and influence hole injection active layer in, reduce the luminous efficiency of LED.
Optionally, temperature when processing stage in reaction chamber can be identical as the temperature in reaction chamber when growth phase, place
Pressure when the reason stage in reaction chamber can be identical as the pressure in reaction chamber when growth phase.
Processing stage and growth phase use identical temperature and pressure, realize relatively simple convenience.
Preferably, the temperature of reaction chamber can be 850 DEG C~1000 DEG C when discontinuity growth electronic barrier layer, preferably
900℃；The pressure of reaction chamber can be 100torr~500torr, preferably 300torr when discontinuity grows electronic barrier layer.
The temperature and pressure in reaction chamber is matched, the preferable electronic barrier layer of crystal quality is obtained.
Optionally, before step 103, which can also include:
The growing low temperature P-type layer on active layer.
Avoid the higher growth temperature of electronic barrier layer that the phosphide atom in active layer is caused to be precipitated by low temperature P-type layer, shadow
Ring the luminous efficiency of light emitting diode.
Correspondingly, electronic barrier layer is grown in low temperature P-type layer.
Specifically, the material of low temperature P-type layer can be identical as the material of p type semiconductor layer.In the present embodiment, low temperature
The material of P-type layer can be the gallium nitride of p-type doping.
Further, the thickness of low temperature P-type layer can be 10nm~50nm, preferably 30nm；P-type is mixed in low temperature P-type layer
Miscellaneous dose of doping concentration can be 1018/cm3~1020/cm3, preferably 1019/cm3。
Specifically, the growing low temperature P-type layer on active layer may include:
Controlled at 600 DEG C~850 DEG C (preferably 750 DEG C), pressure be 100torr~600torr (preferably
300torr), the growing low temperature P-type layer on active layer.
Step 104: the growing P-type semiconductor layer on electronic barrier layer.
Specifically, the material of p type semiconductor layer can be using the gallium nitride of p-type doping (such as magnesium).
Further, the thickness of p type semiconductor layer can be 100nm~500nm, preferably 300nm；P type semiconductor layer
The doping concentration of middle P-type dopant can be 1018/cm3~1020/cm3, preferably 1019/cm3。
In a kind of implementation of the present embodiment, which may include:
Controlled at 850 DEG C~1000 DEG C (preferably 900 DEG C), pressure be 100torr~300torr (preferably
200torr), the growing P-type semiconductor layer on active layer.
In another implementation of the present embodiment, which may include:
The discontinuity growing P-type semiconductor layer on electronic barrier layer.
Specifically, the basic phase of process of process with discontinuity the growth electronic barrier layer of discontinuity growing P-type semiconductor layer
Together, difference essentially consists in reactant difference.Specifically, the whole of discontinuity growing P-type semiconductor layer includes gallium
Source, ammonia and P-type dopant, the whole that discontinuity grows electronic barrier layer includes that silicon source, gallium source, ammonia and p-type are mixed
Miscellaneous dose.That is discontinuity growth includes the multiple growth cycles successively occurred, and each growth cycle includes growth phase and growing
The processing stage occurred after stage.Continue the total overall reaction that growing P-type semiconductor layer is passed through into reaction chamber when growth phase
Object, growing P-type semiconductor layer.Stop being passed through some or all of of growing P-type semiconductor layer into reaction chamber when processing stage
Reactant, and continue to be passed through hydrogen into reaction chamber, remove the reactant remained on surface of p type semiconductor layer.
By using the multiple growth cycle discontinuity growing P-type semiconductor layers successively occurred, each growth cycle includes
Growth phase and processing stage continue the whole that growing P-type semiconductor layer is passed through into reaction chamber when growth phase, can
To carry out the growth of p type semiconductor layer；Stop being passed through growing P-type into reaction chamber when the processing stage occurred after growth phase
Some or all of semiconductor layer reactant, and continue to be passed through hydrogen into reaction chamber, the life of p type semiconductor layer can be stopped
It grows, while being conducive to the longer free path of atom acquisition to make P to remove the reactant remained on surface of p type semiconductor layer as early as possible
The surface of type semiconductor layer leaves behind molding crystal, and unreacted reactant is avoided to be diffused into the crystal of subsequent growth
In, keep the interface of the semiconductor layer (such as p-type contact layer) on p type semiconductor layer and p type semiconductor layer clear, reduces interface
The defect of generation promotes the crystal quality of epitaxial wafer entirety, improves the mobility in hole, hole and electronics in increase active layer
Combined efficiency, the final luminous efficiency for improving LED.
Optionally, after step 104, which can also include:
Controlled at 850 DEG C~1050 DEG C (preferably 950 DEG C), pressure be 100torr~300torr (preferably
200torr), the growing P-type contact layer on p type semiconductor layer.
It is connect by forming ohm between the electrode or transparent conductive film that are formed in p-type contact layer and chip fabrication technique
Touching.
Specifically, the material of p-type contact layer can be using the InGaN of p-type doping.
Further, the thickness of p-type contact layer can be 5nm~100nm, preferably 50nm；P-type is mixed in p-type contact layer
Miscellaneous dose of doping concentration can be 1021/cm3~1022/cm3, preferably 5*1021/cm3。
Specifically, the growing P-type contact layer on p type semiconductor layer may include:
Controlled at 850 DEG C~1050 DEG C (preferably 950 DEG C), pressure be 100torr~300torr (preferably
200torr), the growing P-type contact layer on p type semiconductor layer.
It should be noted that after above-mentioned epitaxial growth terminates, can first by temperature be reduced to 650 DEG C~850 DEG C (preferably
It is 750 DEG C), the annealing of 5 minutes~15 minutes (preferably 10 minutes) is carried out to epitaxial wafer in nitrogen atmosphere, then again
The temperature of epitaxial wafer is reduced to room temperature.
Control temperature, pressure each mean temperature, pressure in the reaction chamber of control growth epitaxial wafer, and specially metal is organic
Compound chemical gaseous phase deposition (English: Metal-organic Chemical Vapor Deposition, referred to as: MOCVD) set
Standby reaction chamber.Using trimethyl gallium or triethyl-gallium as gallium source when realization, high-purity ammonia is as nitrogen source, and trimethyl indium is as indium
Source, for trimethyl aluminium as silicon source, N type dopant selects silane, and P-type dopant selects two luxuriant magnesium.
A kind of specific implementation of production method shown in FIG. 1 may include:
Step 201: a substrate being provided and places substrate in the reactor chamber.
Step 202: controlled at 1050 DEG C, pressure 300torr grows n type semiconductor layer on substrate.
Step 203: grow active layer on n type semiconductor layer, active layer include alternating growth 8 Quantum Well and 8
Quantum is built；Quantum Well with a thickness of 3.5nm, the growth temperature of Quantum Well is 760 DEG C, and the growth pressure of Quantum Well is 300torr；
Quantum build with a thickness of 15nm, the growth temperature that quantum is built is 900 DEG C, and the growth pressure that quantum is built is 300torr.
Step 204: 900 DEG C of temperature, pressure 300torr of control, discontinuity grows electronic barrier layer on active layer；Between
Disconnected property growth includes 10 growth cycles successively occurred, and each growth cycle includes growth phase and goes out after growth phase
Existing processing stage；Continue to be passed through silicon source, flow that flow is 260sccm into reaction chamber when growth phase to be 550sccm's
The P-type dopant that the ammonia and flow that gallium source, flow are 30L/min are 400sccm forms the aluminum gallium nitride of p-type doping, raw
The duration in long stage is 50s；Stop being passed through silicon source, ammonia and P-type dopant into reaction chamber when processing stage, continue to
It is passed through the gallium source that flow is 550sccm in reaction chamber, while continuing to be passed through the hydrogen that flow is 50L/min into reaction chamber, goes
Except the aluminium element remained on surface of the aluminum gallium nitride of p-type doping, the duration of processing stage is 15s.
Step 205: controlled at 900 DEG C, pressure 200torr, growth thickness is the p-type of 300nm on active layer
Semiconductor layer, the doping concentration of P-type dopant is 10 in p type semiconductor layer19cm-3。
Chip is made in obtained epitaxial wafer, with continue to be passed through into reaction chamber in electronic barrier layer growth course silicon source,
Gallium source, ammonia compare that (silicon source in two kinds of chips, gallium source, ammonia and P-type dopant are passed through with chip made of P-type dopant
Flow is identical, and the growth temperature of electronic barrier layer is identical with growth pressure, n type semiconductor layer, active layer and p type semiconductor layer
Growth conditions is identical), the light efficiency of chip improves.1%~2%.
Another specific implementation of production method shown in FIG. 1 may include:
Step 301: a substrate being provided and places substrate in the reactor chamber.
Step 302: controlled at 1050 DEG C, pressure 300torr grows n type semiconductor layer on substrate.
Step 303: grow active layer on n type semiconductor layer, active layer include alternating growth 8 Quantum Well and 8
Quantum is built；Quantum Well with a thickness of 3.5nm, the growth temperature of Quantum Well is 760 DEG C, and the growth pressure of Quantum Well is 300torr；
Quantum build with a thickness of 15nm, the growth temperature that quantum is built is 900 DEG C, and the growth pressure that quantum is built is 300torr.
Step 304: 900 DEG C of temperature, pressure 300torr of control, discontinuity grows electronic barrier layer on active layer；Between
Disconnected property growth includes 30 growth cycles successively occurred, and each growth cycle includes growth phase and goes out after growth phase
Existing processing stage；Continue to be passed through silicon source, flow that flow is 260sccm into reaction chamber when growth phase to be 550sccm's
The P-type dopant that the ammonia and flow that gallium source, flow are 30L/min are 400sccm forms the aluminum gallium nitride of p-type doping, raw
The duration in long stage is 30s；Stop being passed through silicon source, ammonia and P-type dopant into reaction chamber when processing stage, continue to
It is passed through the gallium source that flow is 550sccm in reaction chamber, while continuing to be passed through the hydrogen that flow is 50L/min into reaction chamber, goes
Except the aluminium element remained on surface of the aluminum gallium nitride of p-type doping, the duration of processing stage is 10s.
Step 305: controlled at 900 DEG C, pressure 200torr, growth thickness is the p-type of 300nm on active layer
Semiconductor layer, the doping concentration of P-type dopant is 10 in p type semiconductor layer19cm-3。
Chip is made in obtained epitaxial wafer, with continue to be passed through into reaction chamber in electronic barrier layer growth course silicon source,
Gallium source, ammonia compare that (silicon source in two kinds of chips, gallium source, ammonia and P-type dopant are passed through with chip made of P-type dopant
Flow is identical, and the growth temperature of electronic barrier layer is identical with growth pressure, n type semiconductor layer, active layer and p type semiconductor layer
Growth conditions is identical), the light efficiency of chip improves 3%~5%.
Another specific implementation of production method shown in FIG. 1 may include:
Step 401: a substrate being provided and places substrate in the reactor chamber.
Step 402: controlled at 1050 DEG C, pressure 300torr grows n type semiconductor layer on substrate.
Step 403: grow active layer on n type semiconductor layer, active layer include alternating growth 8 Quantum Well and 8
Quantum is built；Quantum Well with a thickness of 3.5nm, the growth temperature of Quantum Well is 760 DEG C, and the growth pressure of Quantum Well is 300torr；
Quantum build with a thickness of 15nm, the growth temperature that quantum is built is 900 DEG C, and the growth pressure that quantum is built is 300torr.
Step 404: 900 DEG C of temperature, pressure 300torr of control, discontinuity grows electronic barrier layer on active layer；Between
Disconnected property growth includes 50 growth cycles successively occurred, and each growth cycle includes growth phase and goes out after growth phase
Existing processing stage；Continue to be passed through silicon source, flow that flow is 260sccm into reaction chamber when growth phase to be 550sccm's
The P-type dopant that the ammonia and flow that gallium source, flow are 30L/min are 400sccm forms the aluminum gallium nitride of p-type doping, raw
The duration in long stage is 10s；Stop being passed through silicon source, ammonia and P-type dopant into reaction chamber when processing stage, continue to
It is passed through the gallium source that flow is 550sccm in reaction chamber, while continuing to be passed through the hydrogen that flow is 50L/min into reaction chamber, goes
Except the aluminium element remained on surface of the aluminum gallium nitride of p-type doping, the duration of processing stage is 5s.
Step 405: controlled at 900 DEG C, pressure 200torr, growth thickness is the p-type of 300nm on active layer
Semiconductor layer, the doping concentration of P-type dopant is 10 in p type semiconductor layer19cm-3。
Chip is made in obtained epitaxial wafer, with continue to be passed through into reaction chamber in electronic barrier layer growth course silicon source,
Gallium source, ammonia compare that (silicon source in two kinds of chips, gallium source, ammonia and P-type dopant are passed through with chip made of P-type dopant
Flow is identical, and the growth temperature of electronic barrier layer is identical with growth pressure, n type semiconductor layer, active layer and p type semiconductor layer
Growth conditions is identical), the light efficiency of chip improves 4%~6%.
Another specific implementation of production method shown in FIG. 1 may include:
Step 501: a substrate being provided and places substrate in the reactor chamber.
Step 502: controlled at 1050 DEG C, pressure 300torr grows n type semiconductor layer on substrate.
Step 503: grow active layer on n type semiconductor layer, active layer include alternating growth 8 Quantum Well and 8
Quantum is built；Quantum Well with a thickness of 3.5nm, the growth temperature of Quantum Well is 760 DEG C, and the growth pressure of Quantum Well is 300torr；
Quantum build with a thickness of 15nm, the growth temperature that quantum is built is 900 DEG C, and the growth pressure that quantum is built is 300torr.
Step 504: 900 DEG C of temperature, pressure 300torr of control, discontinuity grows electronic barrier layer on active layer；Between
Disconnected property growth includes 10 growth cycles successively occurred, and each growth cycle includes growth phase and goes out after growth phase
Existing processing stage；Continue to be passed through silicon source, flow that flow is 260sccm into reaction chamber when growth phase to be 550sccm's
The P-type dopant that the ammonia and flow that gallium source, flow are 30L/min are 400sccm forms the aluminum gallium nitride of p-type doping, raw
The duration in long stage is 50s；Stop being passed through silicon source, gallium source and P-type dopant into reaction chamber when processing stage, continue to
It is passed through the ammonia that flow is 30L/min in reaction chamber, while continuing to be passed through the hydrogen that flow is 50L/min into reaction chamber, goes
Except the aluminium element remained on surface of the aluminum gallium nitride of p-type doping, the duration of processing stage is 15s.
Step 505: controlled at 900 DEG C, pressure 200torr, growth thickness is the p-type of 300nm on active layer
Semiconductor layer, the doping concentration of P-type dopant is 10 in p type semiconductor layer19cm-3。
Chip is made in obtained epitaxial wafer, with continue to be passed through into reaction chamber in electronic barrier layer growth course silicon source,
Gallium source, ammonia compare that (silicon source in two kinds of chips, gallium source, ammonia and P-type dopant are passed through with chip made of P-type dopant
Flow is identical, and the growth temperature of electronic barrier layer is identical with growth pressure, n type semiconductor layer, active layer and p type semiconductor layer
Growth conditions is identical), the light efficiency of chip improves 2%~3%.
Another specific implementation of production method shown in FIG. 1 may include:
Step 601: a substrate being provided and places substrate in the reactor chamber.
Step 602: controlled at 1050 DEG C, pressure 300torr grows n type semiconductor layer on substrate.
Step 603: grow active layer on n type semiconductor layer, active layer include alternating growth 8 Quantum Well and 8
Quantum is built；Quantum Well with a thickness of 3.5nm, the growth temperature of Quantum Well is 760 DEG C, and the growth pressure of Quantum Well is 300torr；
Quantum build with a thickness of 15nm, the growth temperature that quantum is built is 900 DEG C, and the growth pressure that quantum is built is 300torr.
Step 604: 900 DEG C of temperature, pressure 300torr of control, discontinuity grows electronic barrier layer on active layer；Between
Disconnected property growth includes 30 growth cycles successively occurred, and each growth cycle includes growth phase and goes out after growth phase
Existing processing stage；Continue to be passed through silicon source, flow that flow is 260sccm into reaction chamber when growth phase to be 550sccm's
The P-type dopant that the ammonia and flow that gallium source, flow are 30L/min are 400sccm forms the aluminum gallium nitride of p-type doping, raw
The duration in long stage is 30s；Stop being passed through silicon source, gallium source and P-type dopant into reaction chamber when processing stage, continue to
It is passed through the ammonia that flow is 30L/min in reaction chamber, while continuing to be passed through the hydrogen that flow is 50L/min into reaction chamber, goes
Except the aluminium element remained on surface of the aluminum gallium nitride of p-type doping, the duration of processing stage is 10s.
Step 605: controlled at 900 DEG C, pressure 200torr, growth thickness is the p-type of 300nm on active layer
Semiconductor layer, the doping concentration of P-type dopant is 10 in p type semiconductor layer19cm-3。
Chip is made in obtained epitaxial wafer, with continue to be passed through into reaction chamber in electronic barrier layer growth course silicon source,
Gallium source, ammonia compare that (silicon source in two kinds of chips, gallium source, ammonia and P-type dopant are passed through with chip made of P-type dopant
Flow is identical, and the growth temperature of electronic barrier layer is identical with growth pressure, n type semiconductor layer, active layer and p type semiconductor layer
Growth conditions is identical), the light efficiency of chip improves 2%~3%.
Another specific implementation of production method shown in FIG. 1 may include:
Step 701: a substrate being provided and places substrate in the reactor chamber.
Step 702: controlled at 1050 DEG C, pressure 300torr grows n type semiconductor layer on substrate.
Step 703: grow active layer on n type semiconductor layer, active layer include alternating growth 8 Quantum Well and 8
Quantum is built；Quantum Well with a thickness of 3.5nm, the growth temperature of Quantum Well is 760 DEG C, and the growth pressure of Quantum Well is 300torr；
Quantum build with a thickness of 15nm, the growth temperature that quantum is built is 900 DEG C, and the growth pressure that quantum is built is 300torr.
Step 704: 900 DEG C of temperature, pressure 300torr of control, discontinuity grows electronic barrier layer on active layer；Between
Disconnected property growth includes 50 growth cycles successively occurred, and each growth cycle includes growth phase and goes out after growth phase
Existing processing stage；Continue to be passed through silicon source, flow that flow is 260sccm into reaction chamber when growth phase to be 550sccm's
The P-type dopant that the ammonia and flow that gallium source, flow are 30L/min are 400sccm forms the aluminum gallium nitride of p-type doping, raw
The duration in long stage is 10s；Stop being passed through silicon source, gallium source and P-type dopant into reaction chamber when processing stage, continue to
It is passed through the ammonia that flow is 30L/min in reaction chamber, while continuing to be passed through the hydrogen that flow is 50L/min into reaction chamber, goes
Except the aluminium element remained on surface of the aluminum gallium nitride of p-type doping, the duration of processing stage is 5s.
Step 705: controlled at 900 DEG C, pressure 200torr, growth thickness is the p-type of 300nm on active layer
Semiconductor layer, the doping concentration of P-type dopant is 10 in p type semiconductor layer19cm-3。
Chip is made in obtained epitaxial wafer, with continue to be passed through into reaction chamber in electronic barrier layer growth course silicon source,
Gallium source, ammonia compare that (silicon source in two kinds of chips, gallium source, ammonia and P-type dopant are passed through with chip made of P-type dopant
Flow is identical, and the growth temperature of electronic barrier layer is identical with growth pressure, n type semiconductor layer, active layer and p type semiconductor layer
Growth conditions is identical), the light efficiency of chip improves 4%~6%.
Another specific implementation of production method shown in FIG. 1 may include:
Step 801: a substrate being provided and places substrate in the reactor chamber.
Step 802: controlled at 1050 DEG C, pressure 300torr grows n type semiconductor layer on substrate.
Step 803: grow active layer on n type semiconductor layer, active layer include alternating growth 8 Quantum Well and 8
Quantum is built；Quantum Well with a thickness of 3.5nm, the growth temperature of Quantum Well is 760 DEG C, and the growth pressure of Quantum Well is 300torr；
Quantum build with a thickness of 15nm, the growth temperature that quantum is built is 900 DEG C, and the growth pressure that quantum is built is 300torr.
Step 804: 900 DEG C of temperature, pressure 300torr of control, discontinuity grows electronic barrier layer on active layer；Between
Disconnected property growth includes 10 growth cycles successively occurred, and each growth cycle includes growth phase and goes out after growth phase
Existing processing stage；Continue to be passed through silicon source, flow that flow is 260sccm into reaction chamber when growth phase to be 550sccm's
The P-type dopant that the ammonia and flow that gallium source, flow are 30L/min are 400sccm forms the aluminum gallium nitride of p-type doping, raw
The duration in long stage is 50s；Stop being passed through silicon source, gallium source, ammonia and P-type dopant into reaction chamber when processing stage,
Continue to be passed through the hydrogen that flow is 50L/min into reaction chamber simultaneously, removes the remained on surface of the aluminum gallium nitride of p-type doping
Aluminium element, the duration of processing stage are 15s.
Step 805: controlled at 900 DEG C, pressure 200torr, growth thickness is the p-type of 300nm on active layer
Semiconductor layer, the doping concentration of P-type dopant is 10 in p type semiconductor layer19cm-3。
Chip is made in obtained epitaxial wafer, with continue to be passed through into reaction chamber in electronic barrier layer growth course silicon source,
Gallium source, ammonia compare that (silicon source in two kinds of chips, gallium source, ammonia and P-type dopant are passed through with chip made of P-type dopant
Flow is identical, and the growth temperature of electronic barrier layer is identical with growth pressure, n type semiconductor layer, active layer and p type semiconductor layer
Growth conditions is identical), the light efficiency of chip improves 1%~2%.
Another specific implementation of production method shown in FIG. 1 may include:
Step 901: a substrate being provided and places substrate in the reactor chamber.
Step 902: controlled at 1050 DEG C, pressure 300torr grows n type semiconductor layer on substrate.
Step 903: grow active layer on n type semiconductor layer, active layer include alternating growth 8 Quantum Well and 8
Quantum is built；Quantum Well with a thickness of 3.5nm, the growth temperature of Quantum Well is 760 DEG C, and the growth pressure of Quantum Well is 300torr；
Quantum build with a thickness of 15nm, the growth temperature that quantum is built is 900 DEG C, and the growth pressure that quantum is built is 300torr.
Step 904: 900 DEG C of temperature, pressure 300torr of control, discontinuity grows electronic barrier layer on active layer；Between
Disconnected property growth includes 30 growth cycles successively occurred, and each growth cycle includes growth phase and goes out after growth phase
Existing processing stage；Continue to be passed through silicon source, flow that flow is 260sccm into reaction chamber when growth phase to be 550sccm's
The P-type dopant that the ammonia and flow that gallium source, flow are 30L/min are 400sccm forms the aluminum gallium nitride of p-type doping, raw
The duration in long stage is 30s；Stop being passed through silicon source, gallium source, ammonia and P-type dopant into reaction chamber when processing stage,
Continue to be passed through the hydrogen that flow is 50L/min into reaction chamber simultaneously, removes the remained on surface of the aluminum gallium nitride of p-type doping
Aluminium element, the duration of processing stage are 10s.
Step 905: controlled at 900 DEG C, pressure 200torr, growth thickness is the p-type of 300nm on active layer
Semiconductor layer, the doping concentration of P-type dopant is 10 in p type semiconductor layer19cm-3。
Chip is made in obtained epitaxial wafer, with continue to be passed through into reaction chamber in electronic barrier layer growth course silicon source,
Gallium source, ammonia compare that (silicon source in two kinds of chips, gallium source, ammonia and P-type dopant are passed through with chip made of P-type dopant
Flow is identical, and the growth temperature of electronic barrier layer is identical with growth pressure, n type semiconductor layer, active layer and p type semiconductor layer
Growth conditions is identical), the light efficiency of chip improves 4%~6%.
Another specific implementation of production method shown in FIG. 1 may include:
Step 1001: a substrate being provided and places substrate in the reactor chamber.
Step 1002: controlled at 1050 DEG C, pressure 300torr grows n type semiconductor layer on substrate.
Step 1003: grow active layer on n type semiconductor layer, active layer include alternating growth 8 Quantum Well and 8
Quantum is built；Quantum Well with a thickness of 3.5nm, the growth temperature of Quantum Well is 760 DEG C, and the growth pressure of Quantum Well is 300torr；
Quantum build with a thickness of 15nm, the growth temperature that quantum is built is 900 DEG C, and the growth pressure that quantum is built is 300torr.
Step 1004: 900 DEG C of temperature, pressure 300torr of control, discontinuity grows electronic barrier layer on active layer；
Discontinuity growth includes 50 growth cycles successively occurring, and each growth cycle includes growth phase and after growth phase
The processing stage of appearance；Continue to be passed through the silicon source that flow is 260sccm, flow 550sccm into reaction chamber when growth phase
Gallium source, flow be 30L/min ammonia and flow be 400sccm P-type dopant, formed p-type doping aluminum gallium nitride,
The duration of growth phase is 10s；Stop being passed through silicon source, gallium source, ammonia and p-type doping into reaction chamber when processing stage
Agent, while continuing to be passed through the hydrogen that flow is 50L/min into reaction chamber, the surface of the aluminum gallium nitride of removal p-type doping is residual
The aluminium element stayed, the duration of processing stage are 5s.
Step 1005: controlled at 900 DEG C, pressure 200torr, growth thickness is the p-type of 300nm on active layer
Semiconductor layer, the doping concentration of P-type dopant is 10 in p type semiconductor layer19cm-3。
Chip is made in obtained epitaxial wafer, with continue to be passed through into reaction chamber in electronic barrier layer growth course silicon source,
Gallium source, ammonia compare that (silicon source in two kinds of chips, gallium source, ammonia and P-type dopant are passed through with chip made of P-type dopant
Flow is identical, and the growth temperature of electronic barrier layer is identical with growth pressure, n type semiconductor layer, active layer and p type semiconductor layer
Growth conditions is identical), the light efficiency of chip improves 5%~6%.
Another specific implementation of production method shown in FIG. 1 may include:
Step 1101: a substrate being provided and places substrate in the reactor chamber.
Step 1102: controlled at 1050 DEG C, pressure 300torr grows n type semiconductor layer on substrate.
Step 1103: grow active layer on n type semiconductor layer, active layer include alternating growth 8 Quantum Well and 8
Quantum is built；Quantum Well with a thickness of 3.5nm, the growth temperature of Quantum Well is 760 DEG C, and the growth pressure of Quantum Well is 300torr；
Quantum build with a thickness of 15nm, the growth temperature that quantum is built is 900 DEG C, and the growth pressure that quantum is built is 300torr.
Step 1104: 900 DEG C of temperature, pressure 300torr of control, discontinuity grows electronic barrier layer on active layer；
Discontinuity growth includes 30 growth cycles successively occurring, and each growth cycle includes growth phase and after growth phase
The processing stage of appearance；Continue to be passed through the silicon source that flow is 260sccm, flow 550sccm into reaction chamber when growth phase
Gallium source, flow be 30L/min ammonia and flow be 400sccm P-type dopant, formed p-type doping aluminum gallium nitride,
The duration of growth phase is 30s；Stop being passed through silicon source, gallium source and P-type dopant into reaction chamber when processing stage, continue
It is passed through the ammonia that flow is 30L/min into reaction chamber, while continuing to be passed through the hydrogen that flow is 50L/min into reaction chamber,
The aluminium element remained on surface of the aluminum gallium nitride of p-type doping is removed, the duration of processing stage is 10s.
Step 1105: controlled at 900 DEG C, pressure 200torr, the discontinuity growing P-type semiconductor on active layer
Layer；Discontinuity growth includes 30 growth cycles successively occurring, and each growth cycle includes growth phase and in growth phase
The processing stage occurred later；Continue to be passed through the gallium source that flow is 550sccm, flow 30L/ into reaction chamber when growth phase
The ammonia and flow of min is the P-type dopant of 400sccm, forms the gallium nitride layer of p-type doping, the duration of growth phase
For 30s；Stop being passed through gallium source and P-type dopant into reaction chamber when processing stage, continue to be passed through flow into reaction chamber be
The ammonia of 30L/min, while continuing to be passed through the hydrogen that flow is 50L/min into reaction chamber, the gallium nitride layer of removal p-type doping
P-type dopant remained on surface, the duration of processing stage is 10s.
Chip is made in obtained epitaxial wafer, with continue to be passed through into reaction chamber in electronic barrier layer growth course silicon source,
Continue to be passed through gallium source, ammonia and p-type into reaction chamber in gallium source, ammonia and P-type dopant and p type semiconductor layer growth course
Chip made of dopant compared to (silicon source when electronic barrier layer is grown in two kinds of chips, gallium source, ammonia and P-type dopant it is logical
Inbound traffics are identical, and the growth temperature of electronic barrier layer is identical with growth pressure, gallium source, ammonia and p-type when p type semiconductor layer is grown
Dopant is passed through that flow is identical, and the growth temperature of p type semiconductor layer is identical with growth pressure, n type semiconductor layer and active layer
Growth conditions it is identical), the light efficiency of chip improves 6%~8%.
Another specific implementation of production method shown in FIG. 1 may include:
Step 1201: a substrate being provided and places substrate in the reactor chamber.
Step 1202: controlled at 1050 DEG C, pressure 300torr grows n type semiconductor layer on substrate.
Step 1203: grow active layer on n type semiconductor layer, active layer include alternating growth 8 Quantum Well and 8
Quantum is built；Quantum Well with a thickness of 3.5nm, the growth temperature of Quantum Well is 760 DEG C, and the growth pressure of Quantum Well is 300torr；
Quantum build with a thickness of 15nm, the growth temperature that quantum is built is 900 DEG C, and the growth pressure that quantum is built is 300torr.
Step 1204: 900 DEG C of temperature, pressure 300torr of control, discontinuity grows electronic barrier layer on active layer；
Discontinuity growth includes 30 growth cycles successively occurring, and each growth cycle includes growth phase and after growth phase
The processing stage of appearance；Continue to be passed through the silicon source that flow is 260sccm, flow 550sccm into reaction chamber when growth phase
Gallium source, flow be 30L/min ammonia and flow be 400sccm P-type dopant, formed p-type doping aluminum gallium nitride,
The duration of growth phase is 30s；Stop being passed through silicon source, gallium source and P-type dopant into reaction chamber when processing stage, continue
It is passed through the ammonia that flow is 30L/min into reaction chamber, while continuing to be passed through the hydrogen that flow is 50L/min into reaction chamber,
The aluminium element remained on surface of the aluminum gallium nitride of p-type doping is removed, the duration of processing stage is 10s.
Step 1205: controlled at 900 DEG C, pressure 200torr, the discontinuity growing P-type semiconductor on active layer
Layer；Discontinuity growth includes 10 growth cycles successively occurring, and each growth cycle includes growth phase and in growth phase
The processing stage occurred later；Continue to be passed through the gallium source that flow is 550sccm, flow 30L/ into reaction chamber when growth phase
The ammonia and flow of min is the P-type dopant of 400sccm, forms the gallium nitride layer of p-type doping, the duration of growth phase
For 50s；Stop being passed through gallium source and P-type dopant into reaction chamber when processing stage, continue to be passed through flow into reaction chamber be
The ammonia of 30L/min, while continuing to be passed through the hydrogen that flow is 50L/min into reaction chamber, the gallium nitride layer of removal p-type doping
P-type dopant remained on surface, the duration of processing stage is 15s.
Chip is made in obtained epitaxial wafer, with continue to be passed through into reaction chamber in electronic barrier layer growth course silicon source,
Continue to be passed through gallium source, ammonia and p-type into reaction chamber in gallium source, ammonia and P-type dopant and p type semiconductor layer growth course
Chip made of dopant compared to (silicon source when electronic barrier layer is grown in two kinds of chips, gallium source, ammonia and P-type dopant it is logical
Inbound traffics are identical, and the growth temperature of electronic barrier layer is identical with growth pressure, gallium source, ammonia and p-type when p type semiconductor layer is grown
Dopant is passed through that flow is identical, and the growth temperature of p type semiconductor layer is identical with growth pressure, n type semiconductor layer and active layer
Growth conditions it is identical), the light efficiency of chip improves 7%~9%.
Another specific implementation of production method shown in FIG. 1 may include:
Step 1301: a substrate being provided and places substrate in the reactor chamber.
Step 1302: controlled at 1050 DEG C, pressure 300torr grows n type semiconductor layer on substrate.
Step 1303: grow active layer on n type semiconductor layer, active layer include alternating growth 8 Quantum Well and 8
Quantum is built；Quantum Well with a thickness of 3.5nm, the growth temperature of Quantum Well is 760 DEG C, and the growth pressure of Quantum Well is 300torr；
Quantum build with a thickness of 15nm, the growth temperature that quantum is built is 900 DEG C, and the growth pressure that quantum is built is 300torr.
Step 1304: 900 DEG C of temperature, pressure 300torr of control, discontinuity grows electronic barrier layer on active layer；
Discontinuity growth includes 30 growth cycles successively occurring, and each growth cycle includes growth phase and after growth phase
The processing stage of appearance；Continue to be passed through the silicon source that flow is 260sccm, flow 550sccm into reaction chamber when growth phase
Gallium source, flow be 30L/min ammonia and flow be 400sccm P-type dopant, formed p-type doping aluminum gallium nitride,
The duration of growth phase is 30s；Stop being passed through silicon source, gallium source and P-type dopant into reaction chamber when processing stage, continue
It is passed through the ammonia that flow is 30L/min into reaction chamber, while continuing to be passed through the hydrogen that flow is 50L/min into reaction chamber,
The aluminium element remained on surface of the aluminum gallium nitride of p-type doping is removed, the duration of processing stage is 10s.
Step 1305: controlled at 900 DEG C, pressure 200torr, the discontinuity growing P-type semiconductor on active layer
Layer；Discontinuity growth includes 50 growth cycles successively occurring, and each growth cycle includes growth phase and in growth phase
The processing stage occurred later；Continue to be passed through the gallium source that flow is 550sccm, flow 30L/ into reaction chamber when growth phase
The ammonia and flow of min is the P-type dopant of 400sccm, forms the gallium nitride layer of p-type doping, the duration of growth phase
For 10s；Stop being passed through gallium source and P-type dopant into reaction chamber when processing stage, continue to be passed through flow into reaction chamber be
The ammonia of 30L/min, while continuing to be passed through the hydrogen that flow is 50L/min into reaction chamber, the gallium nitride layer of removal p-type doping
P-type dopant remained on surface, the duration of processing stage is 5s.
Chip is made in obtained epitaxial wafer, with continue to be passed through into reaction chamber in electronic barrier layer growth course silicon source,
Continue to be passed through gallium source, ammonia and p-type into reaction chamber in gallium source, ammonia and P-type dopant and p type semiconductor layer growth course
Chip made of dopant compared to (silicon source when electronic barrier layer is grown in two kinds of chips, gallium source, ammonia and P-type dopant it is logical
Inbound traffics are identical, and the growth temperature of electronic barrier layer is identical with growth pressure, gallium source, ammonia and p-type when p type semiconductor layer is grown
Dopant is passed through that flow is identical, and the growth temperature of p type semiconductor layer is identical with growth pressure, n type semiconductor layer and active layer
Growth conditions it is identical), the light efficiency of chip improves 3%~5%.
Another specific implementation of production method shown in FIG. 1 may include:
Step 1401: a substrate being provided and places substrate in the reactor chamber.
Step 1402: controlled at 1050 DEG C, pressure 300torr grows n type semiconductor layer on substrate.
Step 1403: grow active layer on n type semiconductor layer, active layer include alternating growth 8 Quantum Well and 8
Quantum is built；Quantum Well with a thickness of 3.5nm, the growth temperature of Quantum Well is 760 DEG C, and the growth pressure of Quantum Well is 300torr；
Quantum build with a thickness of 15nm, the growth temperature that quantum is built is 900 DEG C, and the growth pressure that quantum is built is 300torr.
Step 1404: 900 DEG C of temperature, pressure 300torr of control, discontinuity grows electronic barrier layer on active layer；
Discontinuity growth includes 30 growth cycles successively occurring, and each growth cycle includes growth phase and after growth phase
The processing stage of appearance；Continue to be passed through the silicon source that flow is 260sccm, flow 550sccm into reaction chamber when growth phase
Gallium source, flow be 30L/min ammonia and flow be 400sccm P-type dopant, formed p-type doping aluminum gallium nitride,
The duration of growth phase is 30s；Stop being passed through silicon source, gallium source and P-type dopant into reaction chamber when processing stage, continue
It is passed through the ammonia that flow is 30L/min into reaction chamber, while continuing to be passed through the hydrogen that flow is 50L/min into reaction chamber,
The aluminium element remained on surface of the aluminum gallium nitride of p-type doping is removed, the duration of processing stage is 10s.
Step 1405: controlled at 900 DEG C, pressure 200torr, the discontinuity growing P-type semiconductor on active layer
Layer；Discontinuity growth includes 30 growth cycles successively occurring, and each growth cycle includes growth phase and in growth phase
The processing stage occurred later；Continue to be passed through the gallium source that flow is 550sccm, flow 30L/ into reaction chamber when growth phase
The ammonia and flow of min is the P-type dopant of 400sccm, forms the gallium nitride layer of p-type doping, the duration of growth phase
For 30s；Stop being passed through ammonia and P-type dopant into reaction chamber when processing stage, continue to be passed through flow into reaction chamber be
The gallium source of 550sccm, while continuing to be passed through the hydrogen that flow is 50L/min into reaction chamber, the gallium nitride layer of removal p-type doping
P-type dopant remained on surface, the duration of processing stage is 10s.
Chip is made in obtained epitaxial wafer, with continue to be passed through into reaction chamber in electronic barrier layer growth course silicon source,
Continue to be passed through gallium source, ammonia and p-type into reaction chamber in gallium source, ammonia and P-type dopant and p type semiconductor layer growth course
Chip made of dopant compared to (silicon source when electronic barrier layer is grown in two kinds of chips, gallium source, ammonia and P-type dopant it is logical
Inbound traffics are identical, and the growth temperature of electronic barrier layer is identical with growth pressure, gallium source, ammonia and p-type when p type semiconductor layer is grown
Dopant is passed through that flow is identical, and the growth temperature of p type semiconductor layer is identical with growth pressure, n type semiconductor layer and active layer
Growth conditions it is identical), the light efficiency of chip improves 1%~2%.
Another specific implementation of production method shown in FIG. 1 may include:
Step 1501: a substrate being provided and places substrate in the reactor chamber.
Step 1502: controlled at 1050 DEG C, pressure 300torr grows n type semiconductor layer on substrate.
Step 1503: grow active layer on n type semiconductor layer, active layer include alternating growth 8 Quantum Well and 8
Quantum is built；Quantum Well with a thickness of 3.5nm, the growth temperature of Quantum Well is 760 DEG C, and the growth pressure of Quantum Well is 300torr；
Quantum build with a thickness of 15nm, the growth temperature that quantum is built is 900 DEG C, and the growth pressure that quantum is built is 300torr.
Step 1504: 900 DEG C of temperature, pressure 300torr of control, discontinuity grows electronic barrier layer on active layer；
Discontinuity growth includes 30 growth cycles successively occurring, and each growth cycle includes growth phase and after growth phase
The processing stage of appearance；Continue to be passed through the silicon source that flow is 260sccm, flow 550sccm into reaction chamber when growth phase
Gallium source, flow be 30L/min ammonia and flow be 400sccm P-type dopant, formed p-type doping aluminum gallium nitride,
The duration of growth phase is 30s；Stop being passed through silicon source, gallium source and P-type dopant into reaction chamber when processing stage, continue
It is passed through the ammonia that flow is 30L/min into reaction chamber, while continuing to be passed through the hydrogen that flow is 50L/min into reaction chamber,
The aluminium element remained on surface of the aluminum gallium nitride of p-type doping is removed, the duration of processing stage is 10s.
Step 1505: controlled at 900 DEG C, pressure 200torr, the discontinuity growing P-type semiconductor on active layer
Layer；Discontinuity growth includes 30 growth cycles successively occurring, and each growth cycle includes growth phase and in growth phase
The processing stage occurred later；Continue to be passed through the gallium source that flow is 550sccm, flow 30L/ into reaction chamber when growth phase
The ammonia and flow of min is the P-type dopant of 400sccm, forms the gallium nitride layer of p-type doping, the duration of growth phase
For 30s；Stop being passed through gallium source, ammonia and P-type dopant into reaction chamber when processing stage, while continuing to be passed through into reaction chamber
Flow is the hydrogen of 50L/min, removes the P-type dopant remained on surface of the gallium nitride layer of p-type doping, and processing stage continues
Shi Changwei 10s.
Chip is made in obtained epitaxial wafer, with continue to be passed through into reaction chamber in electronic barrier layer growth course silicon source,
Continue to be passed through gallium source, ammonia and p-type into reaction chamber in gallium source, ammonia and P-type dopant and p type semiconductor layer growth course
Chip made of dopant compared to (silicon source when electronic barrier layer is grown in two kinds of chips, gallium source, ammonia and P-type dopant it is logical
Inbound traffics are identical, and the growth temperature of electronic barrier layer is identical with growth pressure, gallium source, ammonia and p-type when p type semiconductor layer is grown
Dopant is passed through that flow is identical, and the growth temperature of p type semiconductor layer is identical with growth pressure, n type semiconductor layer and active layer
Growth conditions it is identical), the light efficiency of chip improves 1%~2%.
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, it is suitable for using system shown in FIG. 1
It is made as method.Fig. 5 is a kind of structural representation of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention
Figure.Referring to Fig. 5, which includes substrate 10, n type semiconductor layer 20, active layer 30, electronics resistance
Barrier 40 and p type semiconductor layer 50, n type semiconductor layer 20, active layer 30, electronic barrier layer 40 and p type semiconductor layer 50 are successively
It is layered on substrate 10.
In the present embodiment, electronic barrier layer 40 includes the multiple sublayers stacked gradually, and the surface of each sublayer is to use
The surface of hydrogen treat.
Optionally, p type semiconductor layer 50 may include the multiple sublayers stacked gradually, and the surface of each sublayer is using hydrogen
The surface of gas disposal.
Optionally, as shown in figure 5, the gallium nitride based LED epitaxial slice can also include buffer layer 61, buffer layer
61 are arranged between substrate 10 and n type semiconductor layer 20.
Preferably, as shown in figure 5, the gallium nitride based LED epitaxial slice can also include undoped gallium nitride layer
62, undoped gallium nitride layer 62 is arranged between buffer layer 61 and n type semiconductor layer 20.
Optionally, it as shown in figure 5, the gallium nitride based LED epitaxial slice can also include stress release layer 70, answers
Power releasing layer 70 is arranged between n type semiconductor layer 20 and active layer 30.
Optionally, as shown in figure 5, the gallium nitride based LED epitaxial slice can also include low temperature P-type layer 80, low temperature
P-type layer 80 is arranged between active layer 30 and electronic barrier layer 40.
Optionally, as shown in figure 5, the gallium nitride based LED epitaxial slice can also include p-type contact layer 90, p-type
Contact layer 90 is arranged on p type semiconductor layer 50.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
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| CN110085708A (en) * | 2019-03-08 | 2019-08-02 | 华灿光电股份有限公司 | Light emitting diode, epitaxial wafer and preparation method thereof |
| CN117845326A (en) * | 2024-03-07 | 2024-04-09 | 北京大学 | A fine control method for growing AlGaN thin films |
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