CN109216508A - A method of inhibit crystal silicon solar batteries laser to cut the reduction of half behind efficiency - Google Patents
A method of inhibit crystal silicon solar batteries laser to cut the reduction of half behind efficiency Download PDFInfo
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- CN109216508A CN109216508A CN201811363985.9A CN201811363985A CN109216508A CN 109216508 A CN109216508 A CN 109216508A CN 201811363985 A CN201811363985 A CN 201811363985A CN 109216508 A CN109216508 A CN 109216508A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/128—Annealing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/129—Passivating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
本发明属于太阳能电池技术领域，涉及一种抑制晶硅太阳能电池激光切半后效率降低的方法。包含以下步骤：太阳能电池激光切半后，将半片电池放置在链式、箱式或管式加热炉中；然后加热炉升温至150‑500℃，同时通入氧气和惰性气体(氮气或氩气等)，氧气流量比例为5％‑30％，处理10min‑2h后在空气中自然冷却至室温。晶硅太阳能电池激光切割后导致切割处电子‑空穴复合加大，造成了FF和Isc的损失，从而导致了晶硅太阳能电池光电转换效率的下降。本方法的目的是为了有效抑制晶硅太阳能电池切半后效率的损失。经过本方法处理过的半片电池效率比没有经过处理的半片电池光电转换效率提升0.1％以上。The invention belongs to the technical field of solar cells, and relates to a method for suppressing the reduction of the efficiency of a crystalline silicon solar cell after laser cutting in half. It includes the following steps: after the solar cell is laser cut in half, the half cell is placed in a chain, box or tube heating furnace; then the heating furnace is heated to 150-500 ° C, and oxygen and an inert gas (nitrogen or argon) are introduced at the same time. etc.), the oxygen flow ratio is 5%-30%, and after treatment for 10min-2h, it is naturally cooled to room temperature in the air. After laser cutting of crystalline silicon solar cells, the recombination of electrons and holes at the cutting site increases, resulting in the loss of FF and Isc, which leads to the decline of photoelectric conversion efficiency of crystalline silicon solar cells. The purpose of this method is to effectively suppress the loss of efficiency after the crystalline silicon solar cell is cut in half. The photoelectric conversion efficiency of the half-cell cell treated by the method is more than 0.1% higher than that of the untreated half-cell cell.
Description
Technical field
The invention belongs to technical field of solar batteries, it is related to a kind of inhibition crystal silicon solar batteries laser and cuts half behind efficiency
Reduced method.
Background technique
Solar energy generation technology is the key areas of green energy resource development.The output power of solar components is improved in addition to mentioning
The photoelectric conversion efficiency of high solar battery, while also to reduce the loss in encapsulation process to the greatest extent.Solar cell module
Encapsulation can choose full wafer cell package and half cell package.Half battery component is advantageous in that compared to full wafer battery pack
Part, internal short circuit current halve, therefore the inside of half component is consumed and effectively dropped in same internal resistance
It is low.To increase the external output power of solar cell module.But in industrialized production, half battery is directly produced
Dramatically increasing in cost can be brought, the general mode for producing half battery is first to produce full wafer battery, uses and swashs after the completion of battery
Full wafer battery is uniformly cut into two panels along line of symmetry by light, then is packaged to be made into half battery and is cut half component.
During full wafer battery is cut into half using laser, laser locally melts cell piece along symmetry axis
Change, to achieve the purpose that for cell piece to be split into two halves.Therefore, laser very serious is caused in the section part of two panels battery
Damage, the damage from laser of section part become the complex centre of photo-generated carrier, therefore relative to before not being sliced, half battery
Photoelectric conversion efficiency reduces.
High energy laser can melt silicon wafer during laser cutting, and the silicon of thawing splashes out to be detached by pumping dirt device,
Form pit in situ, then with mechanical force along cut direction by cell piece dimidiation.Therefore the edge of half battery has two
The different damage of kind.Type of impairment I: the silicon that damage from laser area melts is recrystallized as solid.During this silicon atom without
The original perfect ordered arrangement state of method reduction, forms mechanical damage.Type of impairment II: breaking portion caused by mechanical force breaks
Face is concordant, forms dangling bonds on surface, becomes the compound center of electron-hole.
In the prior art in order to avoid laser cutting there are the problem of can directly produce half battery, but entire factory
Automation needs to be transformed again, and production capacity reduces half.The cutting-in of laser can also be reduced, that is, reduces the silicon wafer of laser fusing
Ratio, loss in efficiency slightly reduce, but effect is unobvious, in addition, cutting-in reduce after cell piece be difficult to break it is disconnected, it is easy to form edge
The fracture of other crystal orientation, and asymmetric dimidiation.
Summary of the invention
It is cut partly to solve solar battery laser in the prior art, the present invention provides a kind of suppressions
Cell piece is put by the method that combinations silicon solar cell laser cuts the reduction of half behind efficiency after solar battery laser cuts half
High temperature, which leads in oxygen atmosphere, to be handled, and the dislocation density on I surface of type of impairment, lattice defect can be due to again passing by high temperature mistake
Journey has significant alleviation；The dangling bonds on II surface of type of impairment first generate fine and close oxide layer, passivation in high-temperature oxygen condition
The defect center of interface.The defect entire lowering of section part after being handled with the method, band after effectively inhibiting cell piece to cut
The loss in efficiency come.Specific step is as follows:
(1), furnace temp under inert gas protection, is risen to 150-500 DEG C, maintains furnace temperature to stablize and is used as standby temperature
Degree.
When temperature is lower than 150 DEG C, section is difficult to form thermal oxide layer is passivated type of impairment I again, in addition swashs in lattice
The defects of atom caused by light misplaces also rearranges without enough heat powers, can not effectively be passivated type of impairment II.But it is warm
Degree can not be excessively high, higher than 500 DEG C after will cause battery surface passivation layer passivation effect be deteriorated, electrode also easily aoxidizes, right
In HIT battery, treatment temperature is even not above 250 degree.Therefore, the method for the present invention is heat-treated using 150-500 DEG C.
Wherein, the inert gas is nitrogen, argon gas.
(2), the half cell piece after cutting is gathered and is placed on bracket, is sent into heating furnace, guarantee that cutting section can
With with atmosphere in furnace, shut fire door.
The half cell piece are as follows: N-PERT half cell piece, N-TOPCon half cell piece or HIT half cell piece；
The bracket is quartz holder, SiC bracket or stainless steel stent.
(3), it is passed through oxygen to be handled, oxygen flow ratio 5%-30%；Handle time 10min-2h.
Oxygen flow is lower than 5%, and the time can not form fine and close and sufficiently thick thermal oxide layer lower than 10min, can not also make
Annealed zone lattice defect effectively restores.But flow be higher than 30% after, oxygen be it is excessive, will cause gas waste increase
Economic cost.As long as lattice defect is effectively restored, oxide layer is fine and close enough, for more time to process results just without apparent
It influences, by experiment we have found that 2h is the upper limit for handling the time.
(4), quartz holder is taken out together with cell piece after the completion of handling, is cooled to room temperature.
The type of cooling is that natural cooling or process control are cooling.
The utility model has the advantages that
The method of the present invention simple process, effect are obvious；Requirement to equipment is low, and common annealing furnace, band oven, batch-type furnace are all
It can complete heat treatment of the invention.
After solar battery laser is cut half by the method for the present invention, cell piece is put into high temperature and is led in oxygen atmosphere
Reason, the dislocation density on I surface of type of impairment, lattice defect can have significant alleviation due to again passing by pyroprocess；Type of impairment
The dangling bonds on II surface first generate fine and close oxide layer in high-temperature oxygen condition, have been passivated the defect center of interface.Use this
The defect entire lowering of section part, bring loss in efficiency after effectively inhibiting cell piece to cut after method processing.
Detailed description of the invention
Fig. 1 is the cutting process that battery laser cuts half, cell piece fracture process and section type of impairment figure.
Fig. 2 is the photoelectric conversion efficiency figure of battery after embodiment 1-3 processing.
Specific embodiment
Embodiment 1
(1), in N2Under gas shield, furnace temp rises to 300 DEG C, maintains furnace temperature to stablize and is used as standby temperature.
(2), N-PERT half battery after cutting is gathered and is placed on quartz holder, is sent into heating furnace, guarantee cutting
Section can shut fire door with atmosphere in furnace.
(3), it is passed through oxygen, oxygen flow is than 10%；Handle time 10min.
(4), quartz holder is taken out together with cell piece after the completion of handling, cooled to room temperature.
The photoelectric conversion efficiency of N-PERT battery is than improving 0.1% before processing after processing, as shown in Figure 2.
Embodiment 2
(1), in N2Under gas shield, furnace temp maintains furnace temperature to stablize and is used as standby temperature to 400 DEG C.
(2), the N-TOPCon half cell piece after cutting is gathered and is placed on quartz holder, is sent into heating furnace, protected
Card cutting section can shut fire door with atmosphere in furnace.
(3), it is passed through oxygen, oxygen flow is than 10%；Handle time 30min.
(4), quartz holder is taken out together with cell piece after the completion of handling, cooled to room temperature.
The photoelectric conversion efficiency of N-TOPCon battery is than improving 0.15% before processing after processing, as shown in Figure 2.
Embodiment 3
(1), in N2Under gas shield, furnace temp rises to 150 DEG C, maintains furnace temperature to stablize and is used as standby temperature.
(2), the HIT half cell piece after cutting is gathered and is placed on quartz holder, is sent into heating furnace, guarantee cutting
Section can shut fire door with atmosphere in furnace.
(3), it is passed through oxygen, oxygen flow is than 10%；Handle time 20min.
(4), quartz holder is taken out together with cell piece after the completion of handling, cooled to room temperature.
The photoelectric conversion efficiency of HIT battery is than improving 0.06% before processing after processing, as shown in Figure 2.
Claims (4)
1. a kind of method for inhibiting crystal silicon solar batteries laser to cut the reduction of half behind efficiency, it is characterised in that: the method step
It is as follows:
(1), furnace temp under inert gas protection, is risen to 150-500 DEG C, maintains furnace temperature to stablize and is used as standby temperature；
(2), the half cell piece after laser being cut half, which gathers, to be placed on bracket, is sent into heating furnace, guarantees that cutting section can
With with atmosphere in furnace, shut fire door；
(3), it is passed through oxygen to be handled, oxygen flow ratio 5%-30%；Handle time 10min-2h；
(4), bracket is taken out together with cell piece after the completion of handling, is cooled to room temperature.
2. the method for inhibiting crystal silicon solar batteries laser to cut the reduction of half behind efficiency as described in claim 1, it is characterised in that:
Inert gas described in step (1) is nitrogen, argon gas.
3. the method for inhibiting crystal silicon solar batteries laser to cut the reduction of half behind efficiency as described in claim 1, it is characterised in that:
Half cell piece described in step (2) are as follows: N-PERT half cell piece, N-TOPCon half cell piece or HIT half cell piece；
The bracket is quartz holder, SiC bracket or stainless steel stent.
4. the method for inhibiting crystal silicon solar batteries laser to cut the reduction of half behind efficiency as described in claim 1, it is characterised in that:
The type of cooling described in step (4) is that natural cooling or process control are cooling.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811363985.9A CN109216508A (en) | 2018-11-16 | 2018-11-16 | A method of inhibit crystal silicon solar batteries laser to cut the reduction of half behind efficiency |
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| CN201811363985.9A CN109216508A (en) | 2018-11-16 | 2018-11-16 | A method of inhibit crystal silicon solar batteries laser to cut the reduction of half behind efficiency |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110034205A (en) * | 2019-04-19 | 2019-07-19 | 协鑫集成科技股份有限公司 | A kind of photovoltaic cell and the method that photovoltaic cell is isolated from multi-layer crystal chip |
| CN110071178A (en) * | 2019-04-12 | 2019-07-30 | 泰州隆基乐叶光伏科技有限公司 | A kind of preparation method being sliced battery and slice battery and photovoltaic module |
| CN110137271A (en) * | 2019-04-25 | 2019-08-16 | 泰州隆基乐叶光伏科技有限公司 | The passivating method and device and slice battery and photovoltaic module of slice battery |
| CN110767773A (en) * | 2019-09-29 | 2020-02-07 | 南通苏民新能源科技有限公司 | Method for improving photoelectric conversion efficiency of half solar cell module |
| CN110854042A (en) * | 2019-11-12 | 2020-02-28 | 苏州迈为科技股份有限公司 | Solar cell splitting method and system |
| CN111081819A (en) * | 2019-12-31 | 2020-04-28 | 通威太阳能（合肥）有限公司 | A kind of anti-damage cutting method and device for solar cell |
| CN111326606A (en) * | 2020-03-11 | 2020-06-23 | 苏州光汇新能源科技有限公司 | N-type split solar cell structure and fabrication method thereof |
| CN113013266A (en) * | 2020-08-19 | 2021-06-22 | 友达光电股份有限公司 | Solar cell and method for manufacturing same |
| CN113421950A (en) * | 2021-06-21 | 2021-09-21 | 安徽华晟新能源科技有限公司 | Method for manufacturing solar cell |
| JP7058312B2 (en) | 2020-08-21 | 2022-04-21 | 晶科▲緑▼能（上海）管理有限公司 | Cutting and passivation methods for silicon-based semiconductor devices, and silicon-based semiconductor devices |
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| CN105226124A (en) * | 2015-11-03 | 2016-01-06 | 张家港其辰光伏科技有限公司 | Solar module and preparation method thereof |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110071178A (en) * | 2019-04-12 | 2019-07-30 | 泰州隆基乐叶光伏科技有限公司 | A kind of preparation method being sliced battery and slice battery and photovoltaic module |
| CN110034205A (en) * | 2019-04-19 | 2019-07-19 | 协鑫集成科技股份有限公司 | A kind of photovoltaic cell and the method that photovoltaic cell is isolated from multi-layer crystal chip |
| CN110137271A (en) * | 2019-04-25 | 2019-08-16 | 泰州隆基乐叶光伏科技有限公司 | The passivating method and device and slice battery and photovoltaic module of slice battery |
| CN110767773A (en) * | 2019-09-29 | 2020-02-07 | 南通苏民新能源科技有限公司 | Method for improving photoelectric conversion efficiency of half solar cell module |
| CN110854042A (en) * | 2019-11-12 | 2020-02-28 | 苏州迈为科技股份有限公司 | Solar cell splitting method and system |
| CN111081819A (en) * | 2019-12-31 | 2020-04-28 | 通威太阳能（合肥）有限公司 | A kind of anti-damage cutting method and device for solar cell |
| CN111081819B (en) * | 2019-12-31 | 2021-06-08 | 通威太阳能（合肥）有限公司 | Damage-preventing cutting method and device for solar cell |
| CN111326606A (en) * | 2020-03-11 | 2020-06-23 | 苏州光汇新能源科技有限公司 | N-type split solar cell structure and fabrication method thereof |
| CN113013266A (en) * | 2020-08-19 | 2021-06-22 | 友达光电股份有限公司 | Solar cell and method for manufacturing same |
| JP7058312B2 (en) | 2020-08-21 | 2022-04-21 | 晶科▲緑▼能（上海）管理有限公司 | Cutting and passivation methods for silicon-based semiconductor devices, and silicon-based semiconductor devices |
| US12125936B2 (en) | 2020-08-21 | 2024-10-22 | Jinko Green Energy (Shanghai) Management Co., LTD | Method for passivating silicon-based semiconductor device, and silicon-based semiconductor device |
| CN113421950A (en) * | 2021-06-21 | 2021-09-21 | 安徽华晟新能源科技有限公司 | Method for manufacturing solar cell |
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Application publication date: 20190115 |