CN109167576A - Low-noise amplifier and electronic equipment - Google Patents
Low-noise amplifier and electronic equipment Download PDFInfo
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- CN109167576A CN109167576A CN201810619606.1A CN201810619606A CN109167576A CN 109167576 A CN109167576 A CN 109167576A CN 201810619606 A CN201810619606 A CN 201810619606A CN 109167576 A CN109167576 A CN 109167576A
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- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 32
- 230000003139 buffering effect Effects 0.000 claims abstract description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
- H03F3/165—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices with junction-FET's
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
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Abstract
The embodiment of the present application provides a kind of low-noise amplifier and electronic equipment, comprising: at least two low noise amplification modules, each low noise amplification module includes: common source pole unit, common gate unit, input resistant matching unit, output impedance matching unit, the common source pole unit is for converting input voltage into input current, the common gate unit is for buffering the input current, and output voltage to the output end and the input voltage are isolated, the input impedance unit is the equivalent impedance of the input terminal, the output impedance matching is the equivalent impedance of the output end, to improve the current efficiency of low-noise amplifier, and there is preferable input/output impedance matching.
Description
Technical field
The invention relates to field of circuit technology more particularly to a kind of low-noise amplifiers and electronic equipment.
Background technique
Low noise amplifier (low-noise amplifier, abbreviation LNA) is mainly used in communication system will be received from day
The signal of line amplifies, in order to which the electronic equipment of rear class is handled.Since the signal from antenna is usually quite faint, low noise
Amplifier is respectively positioned on the position very close to antenna under normal circumstances, to reduce loss of the signal by transmission line.
It is located at entire receiver close to the level-one at first of antenna just because of low noise amplifier, its characteristic directly affects
Entire receiver receive the quality of signal.In order to ensure antenna received signal can receiver afterbody it is correct
Recovery, a good low noise amplifier needs generate alap noise and distortion while amplified signal.
But there is urgently improved technological deficiency in existing low-noise amplifier, for example, current efficiency is lower.
Summary of the invention
In view of this, one of the technical issues of the embodiment of the present application is solved is to provide a kind of low-noise amplifier and electricity
Sub- equipment, to overcome or alleviate above-mentioned technological deficiency in the prior art.
The embodiment of the present application provides a kind of low-noise amplifier comprising: at least two low noise amplification modules, each
Low noise amplification module includes: common source pole unit, common gate unit, input resistant matching unit, output impedance matching unit, institute
It states common source pole unit and is used to carry out the input current for converting input voltage into input current, the common gate unit
Buffering, and output voltage to the output end and the input voltage are isolated, the input impedance unit is described defeated
Enter the equivalent impedance at end, the output impedance matching is the equivalent impedance of the output end.
Optionally, in the embodiment of the application, at least two low noise amplifications module includes:
First low noise amplification module comprising the first common source pole unit, the first common gate unit, the first input impedance
With unit, the first output impedance matching unit, the first common source pole unit is used to the first input voltage being converted to first defeated
Enter electric current, the first common gate unit is used to buffer first input current, and to first output end
Output voltage and first input voltage are isolated, and the first input impedance unit is the equivalent impedance of its input terminal,
The output impedance matching is the equivalent impedance of first output end.
Optionally, in the embodiment of the application, at least two low noise amplifications module further include:
Second low noise amplification module comprising the second common source pole unit, the second common gate unit, the second input impedance
With unit, the second output impedance matching unit, the second common source pole unit is used to the second input voltage being converted to second defeated
Enter electric current, the second common gate unit is used to buffer second input current, and to the second output terminal
Output voltage and second input voltage are isolated, and the second input impedance unit is the equivalent of second input terminal
Impedance, the output impedance matching are the equivalent impedance of the second output terminal, the output voltage conduct of the second output terminal
First input voltage.
Optionally, in the embodiment of the application, the first end of the first common source pole unit and the described second total grid
The second end of pole unit connects, and the second end of the first common source pole unit is connect with the third common gate unit.
Optionally, in the embodiment of the application, the first end of the first common gate unit and second output
Impedance matching unit connection, the third end of the first common gate unit is connect with first voltage.
Optionally, in the embodiment of the application, the first end of the second common source pole unit and the described second total grid
The first end of pole unit connects, the second end ground connection of the second common source pole unit, the third end of the second common source pole unit
It is connect with second input voltage.
Optionally, in the embodiment of the application, the first end of the second common source pole unit and the span at third end
It is connected to a feedback resistance.
Optionally, in the embodiment of the application, the second output impedance matching unit includes third equivalent inductance
With third equivalent capacitive reactance, one end of the third equivalent inductance is connect with the first end of the first common gate unit, and in addition one
End is connect with first voltage, and one end of the third capacitive reactance is connect with the first end of the first common gate unit, other end
As output end.
Optionally, in the embodiment of the application, the second input resistant matching unit includes the first equivalent reactance
With the second equivalent capacitive reactance, first equivalent inductance is connect with the third end of the second common source pole unit.
The embodiment of the present application also provides a kind of electronic equipment comprising the low-noise amplifier.Such as eventually for intelligence
End or server.
The embodiment of the present application, low-noise amplifier include at least two low noise amplification modules, each low noise amplification mould
Block includes: common source pole unit, common gate unit, input resistant matching unit, output impedance matching unit, the common source pole unit
For converting input voltage into input current, the common gate unit is used to buffer the input current, and to institute
The output voltage and the input voltage for stating output end are isolated, and the input impedance unit is the equivalent resistance of the input terminal
Anti-, the output impedance matching is the equivalent impedance of the output end, so that the current efficiency of low-noise amplifier is improved, with
And there is preferable input/output impedance matching.
Detailed description of the invention
The some specific of the embodiment of the present application is described in detail by way of example and not limitation with reference to the accompanying drawings hereinafter
Embodiment.Identical appended drawing reference denotes same or similar part or part in attached drawing.Those skilled in the art should manage
Solution, the drawings are not necessarily drawn to scale.In attached drawing:
Fig. 1 is the structural schematic diagram of one low noise amplification module of the embodiment of the present application；
Fig. 2 is the structural schematic diagram of two low noise amplification module of the embodiment of the present application；
Fig. 3 is the structural schematic diagram of three low-noise amplifier of the embodiment of the present application.
Specific embodiment
Any technical solution for implementing the embodiment of the present application must be not necessarily required to reach simultaneously above all advantages.
Below in conjunction with attached drawing in the embodiment of the present invention, technical solution in the embodiment of the present invention carries out clear, complete
Ground description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Usually exist
The component of the embodiment of the present invention described and illustrated in attached drawing can be arranged and be designed with a variety of different configurations herein.Cause
This, is not intended to limit claimed invention to the detailed description of the embodiment of the present invention provided in the accompanying drawings below
Range, but it is merely representative of selected embodiment of the invention.Based on the embodiment of the present invention, those skilled in the art are not doing
Every other embodiment obtained under the premise of creative work out, shall fall within the protection scope of the present invention.
In order to make those skilled in the art more fully understand the technical solution in the embodiment of the present application, below in conjunction with the application
Attached drawing in embodiment, the technical scheme in the embodiment of the application is clearly and completely described, it is clear that described reality
Applying example only is the embodiment of the present application a part of the embodiment, instead of all the embodiments.Based on the implementation in the embodiment of the present application
The range of the embodiment of the present application protection all should belong in example, those of ordinary skill in the art's every other embodiment obtained.
Further illustrate that the embodiment of the present application implements below with reference to the embodiment of the present application attached drawing.
The core concept of the following embodiments of the application is the provision of a kind of low-noise amplifier comprising: at least two
Low noise amplification module, each low noise amplification module include: common source pole unit, common gate unit, input resistant matching unit,
Output impedance matching unit, the common source pole unit are used for converting input voltage into input current, the common gate unit
It is buffered in the input current, and output voltage to the output end and the input voltage are isolated, it is described
Input impedance unit is the equivalent impedance of the input terminal, and the output impedance matching is the equivalent impedance of the output end, because
This is with preferable input/output impedance matching and higher current efficiency.
Specifically, it in order to make clear explanation to above-mentioned core concept, in the following embodiments of the application, is put with low noise
Big implement body for two low noise amplification modules including being illustrated.
However, it is desirable to explanation, on the basis of the application following embodiments, those of ordinary skill in the art can also be with
Low-noise amplifier is realized using three or three or more low noise amplification modules.And it is there are two or more than two
Low noise amplification module when, specifically can according to actual needs, these low noise blocks can be isomorphism and be also possible to isomery.
In the following embodiments of the application, it is illustrated with two low noise amplification modules of isomery.
Fig. 1 is the structural schematic diagram of one low-noise amplifier of the embodiment of the present application；In the present embodiment, with the low noise amplification
Device is illustrated for the function of being equal to low-noise amplifier can be implemented separately.
Shown in Figure 1, low-noise amplifier includes: the first common source pole unit, the first common gate unit, the first input resistance
Anti- matching unit, the first output impedance matching unit, the first common source pole unit are used to input voltage Vi being converted to input
Electric current, the first common gate unit are used to buffer the input current, and to the output of first output end electricity
Pressure Vo and first input voltage are isolated, and the first input impedance unit is the equivalent resistance of the first input end
Anti-, the output impedance matching is the equivalent impedance of the output end.
Optionally, in any embodiment of the application, the first end of the first common source pole unit is total with described first
The second end of grid unit connects, and the second end of the first common gate unit and the first output impedance matching unit connect
It connects, the third end of the first common source pole unit is connect with the first voltage Vdd.
Optionally, in any embodiment of the application, the third end of the first common gate unit and first voltage connect
It connects.
In a concrete application scene, the first common source pole unit is the second NMOS tube M0, the first common gate list
Member is the first NMOS tube M1.Refer again to Fig. 1, the first end of the first NMOS and the second NMOS tube is respectively drain terminal, the first NMOS tube
It is source with the second end of the second NMOS tube, the third end of the first NMOS tube and the second NMOS tube is grid end.
At the same time, in the concrete application scene, the first input resistant matching unit include: the first equivalent inductance L1 and
Second equivalent inductance L2；Second output impedance matching unit includes: the 0th equivalent inductance L0 and the 0th equivalent capacity C0.
Based on the specific type selecting of device in above-mentioned concrete application scene, the connection relationship of each device is specific as follows:
The source of first NMOS tube is connect with the drain terminal of the 2nd NMOS unit, the drain terminal of first NMOS tube
It is connect with the first output impedance matching unit, the grid end of first NMOS tube is connect with the first voltage Vdd.Specifically
Ground, the drain terminal of first NMOS tube is connect with the 0th equivalent inductance L0 in the first output impedance matching unit, into one
Step is connect by the 0th equivalent inductance L0 in the first output impedance matching unit with first voltage Vdd, and described first
The grid end of NMOS tube is connect with the first voltage Vdd.Specifically, one end of the 0th equivalent inductance L0 and first voltage Vdd connect
It connects, other end is connect with the drain terminal of first NMOS tube.The drain terminal of 0th one end equivalent capacity C0 and the first NMOS tube connects
It connects, the other end is used for transmission the first output voltage Vo i.e. output voltage of the first output end as the first output end.
The source of second NMOS tube is connect with the first input resistant matching unit, the grid of second NMOS tube
End is connect by the first input resistant matching unit with input voltage Vi.Specifically, the source of second NMOS tube with
The second equivalent inductance L2 connection in the first input resistant matching unit, the grid end of second NMOS tube pass through described the
The first equivalent inductance L1 in one input resistant matching unit is connect with input voltage Vi.
For the circuit of above-mentioned Fig. 1, there are following relationships:
Av=gmn*ZL
In above-mentioned formula (1), gmn indicates the mutual conductance of the second NMOS tube, and Av indicates that the voltage gain of integrated circuit, ZL indicate
The capacitive reactance of 0th equivalent capacity, un indicate the mobility of the second NMOS tube, and cox indicates the oxidation layer parameter of the second NMOS tube, W/L
Indicate the breadth length ratio of the second NMOS tube, Id indicates the electric current of the second NMOS tube.
Fig. 1 circuit structure as described in the examples, since the first common source pole unit is used to convert input voltage Vi
For input current, the first common gate unit is used to buffer the input current, and to first output end
Output voltage Vo and first input voltage are isolated, the first input impedance unit be the first input end etc.
Impedance is imitated, the output impedance matching is the equivalent impedance of the output end, to preferably realize input/output impedance
Match, while there is lower noise.
Fig. 2 is the structural schematic diagram of two low-noise amplifier of the embodiment of the present application；In the present embodiment, with the low noise amplification
Device is illustrated for the function of being equal to low-noise amplifier can be implemented separately.
Shown in Figure 2, which includes the second common source pole unit, the second common gate unit, the second input
Impedance matching unit, the second output impedance matching unit, the second common source pole unit are defeated for being converted to input voltage Vi
Enter electric current, the second common gate unit is used to buffer the input current, and to the output voltage of the output end
Vo and the input voltage are isolated, and the second input impedance unit is the equivalent impedance of input terminal, the output impedance
Matching is the equivalent impedance of the output end.
Specifically, in the present embodiment, the first end of the second common source pole unit and the second common gate unit
First end connection, the second common source pole unit second end ground connection, the third end of the second common source pole unit with it is described defeated
Enter voltage connection.
Specifically, in the present embodiment, the second end of the second common gate unit is connect with the first voltage Vdd,
The third end of the second common gate unit is connect with the third end of the second common source pole unit.In addition, circuit shown in Fig. 2
On be additionally provided with feedback resistance R1, feedback resistance R1 is across between the grid end and drain terminal of the second PMOS tube and the second NMOS tube.
In a concrete application scene, the second common source pole unit is third NMOS tube M0, and the second common gate unit is
4th PMOS tube M1, the first end of third NMOS tube are drain terminal, and the second end of third NMOS tube is source, the of third NMOS tube
Three ends are grid end, and the first end of the 4th PMOS tube is drain terminal, and the second end of the 3rd NMOS is source, and the third end of the 3rd NMOS is
Grid end.The drain terminal of the third NMOS tube is connect with the drain terminal of the 4th PMOS, the source ground connection of the third NMOS tube, institute
The grid end for stating third NMOS tube is connect with the input voltage Vi.
Second input resistant matching unit includes the first equivalent inductance L1, and the second output impedance matching unit includes 0th etc.
Capacitor C0 is imitated, the grid end of the 3rd NMOS is connect by the first equivalent inductance L1 with input voltage Vi, and the drain terminal of the 4th PMOS passes through
0th equivalent capacity C0 forms the output end and transmits output voltage Vo.It should be noted that the second input impedance here
The 0th equivalent capacity C0 label that the first equivalent inductance L1, the second output impedance matching unit for including with unit include although with
Related device in above-mentioned Fig. 1 is identical, and not representing is that its impedance value is centainly identical or same device.
For the circuit of above-mentioned Fig. 1, there are following relationships:
Av=(gmn+gmp) * ZL
In above-mentioned formula (2), gmp indicates the mutual conductance of the 4th PMOS tube, and gmn indicates the mutual conductance of third NMOS tube, and Av is indicated
The voltage gain of integrated circuit, ZL indicate the impedance of feedback resistance, and up indicates the mobility of the 4th PMOS tube, and cox " indicates the 4th
The oxidation layer parameter of PMOS tube, W/L " indicate the breadth length ratio of the 4th PMOS tube, and Id " indicates the electric current of the 4th PMOS tube.Un is indicated
The mobility of third NMOS tube, cox' indicate that the oxidation layer parameter of third NMOS tube, W/L' indicate the breadth length ratio of third NMOS tube,
The electric current of Id' expression third NMOS tube.
Embodiment shown in Fig. 2 compares above-mentioned formula (2), since the second common source pole unit is used to turn input voltage Vi
It is changed to input current, the second common gate unit is used to buffer the input current, and to the defeated of the output end
Voltage Vo and the input voltage are isolated out, and the second input impedance unit is the equivalent impedance of input terminal, described defeated
Impedance matching is the equivalent impedance of the output end out, so as to realize higher current efficiency.
Fig. 3 is the structural schematic diagram of three low-noise amplifier of the embodiment of the present application.In the present embodiment, low-noise amplifier packet
Above-mentioned Fig. 1 and low noise amplification module shown in Fig. 2 are included, wherein low noise amplification shown in FIG. 1 is as the first low noise amplification
Module, low noise amplification module shown in Fig. 2 is as the second low noise amplification module.
It should be noted that save the input resistant matching unit in above-mentioned Fig. 2, and by the output voltage in above-mentioned Fig. 2
As the input voltage in above-mentioned Fig. 1.
Compared with above-mentioned Fig. 2, the second input resistant matching unit shown in Fig. 2 is equivalent to the input resistant matching in Fig. 1
Unit, the output impedance matching unit in Fig. 1 are equivalent to the first output impedance matching unit.
For Fig. 3, it is equivalent to and the low noise amplification block combiner of Fig. 1 and Fig. 2 is got up to realize that two-stage low noise is put
Big treatment process.
For Fig. 3, the voltage gain of circuit is the sum of the voltage gain of above-mentioned Fig. 1 and Fig. 2 circuit.
When Fig. 1 and Fig. 2 is combined, input voltage is also referred to as the second input voltage in Fig. 2, and output voltage is as Fig. 1
In input voltage, i.e., the input voltage in Fig. 1 at this time is also referred to as the first input voltage, using the output voltage in Fig. 2 as
First input voltage.
PMOS tube M3 on figure is equivalent to the 4th PMOS tube M1 in Fig. 2, and NMOS tube M2 is equivalent to the 3rd NMOS in Fig. 2
Pipe M0.
In Fig. 3 embodiment, due to combining the circuit structure of Fig. 1 and Fig. 2, therefore, there is preferable input/output resistance
Anti- matching and higher current efficiency.
The apparatus embodiments described above are merely exemplary, wherein described, module can as illustrated by the separation member
It is physically separated with being or may not be, the component shown as module may or may not be physics mould
Block, it can it is in one place, or may be distributed on multiple network modules.It can be selected according to the actual needs
In some or all of the modules achieve the purpose of the solution of this embodiment.Those of ordinary skill in the art are not paying creativeness
Labour in the case where, it can understand and implement.
Finally, it should be noted that above embodiments are only to illustrate the technical solution of the embodiment of the present application, rather than it is limited
System；Although the application is described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: its
It is still possible to modify the technical solutions described in the foregoing embodiments, or part of technical characteristic is equal
Replacement；And these are modified or replaceed, each embodiment technical solution of the application that it does not separate the essence of the corresponding technical solution
Spirit and scope.
Claims (10)
1. a kind of low-noise amplifier characterized by comprising at least two low noise amplification modules, each low noise amplification
Module includes: common source pole unit, common gate unit, input resistant matching unit, output impedance matching unit, the common source list
Member is used to buffer the input current for converting input voltage into input current, the common gate unit, and right
The output voltage of the output end and the input voltage are isolated, and the input impedance unit is the equivalent of the input terminal
Impedance, the output impedance matching are the equivalent impedance of the output end.
2. low-noise amplifier according to claim 1, which is characterized in that at least two low noise amplifications module packet
It includes:
First low noise amplification module comprising the first common source pole unit, the first common gate unit, the first input resistant matching list
Member, the first output impedance matching unit, the first common source pole unit are used to being converted to the first input voltage into the first input electricity
Stream, the first common gate unit is for buffering first input current, and the output to first output end
Voltage and first input voltage are isolated, and the first input impedance unit is the equivalent impedance of its input terminal, described
Output impedance matching is the equivalent impedance of first output end.
3. low-noise amplifier according to claim 2, which is characterized in that at least two low noise amplifications module is also
Include:
Second low noise amplification module comprising the second common source pole unit, the second common gate unit, the second input resistant matching list
Member, the second output impedance matching unit, the second common source pole unit are used to being converted to the second input voltage into the second input electricity
Stream, the second common gate unit is for buffering second input current, and the output to the second output terminal
Voltage and second input voltage are isolated, and the second input impedance unit is the equivalent resistance of second input terminal
Anti-, the output impedance matching is the equivalent impedance of the second output terminal, and the output voltage of the second output terminal is as institute
State the first input voltage.
4. low-noise amplifier according to claim 2, which is characterized in that the first end of the first common source pole unit with
The second end of the second common gate unit connects, the second end of the first common source pole unit and the third common gate unit
Connection.
5. low-noise amplifier according to claim 2, which is characterized in that the first end of the first common gate unit with
The second output impedance matching unit connection, the third end of the first common gate unit is connect with first voltage.
6. low-noise amplifier according to claim 3, which is characterized in that the first end of the second common source pole unit with
The first end of the second common gate unit connects, the second end ground connection of the second common source pole unit, second common source
The third end of unit is connect with second input voltage.
7. low-noise amplifier according to claim 3, which is characterized in that the first end of the second common source pole unit and
It is bridged between third end and awards resistance once.
8. low-noise amplifier according to claim 2, which is characterized in that the second output impedance matching unit includes
Third equivalent inductance and third equivalent capacitive reactance, the first end of one end of the third equivalent inductance and the first common gate unit
Connection, other end are connect with first voltage, and the first end of one end of the third capacitive reactance and the first common gate unit connects
It connects, other end is as output end.
9. low-noise amplifier according to claim 3, which is characterized in that the second input resistant matching unit includes
First equivalent reactance and the second equivalent capacitive reactance, first equivalent inductance are connect with the third end of the second common source pole unit.
10. a kind of electronic equipment, which is characterized in that including the described in any item low-noise amplifiers of claim 1-9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810619606.1A CN109167576A (en) | 2018-06-13 | 2018-06-13 | Low-noise amplifier and electronic equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810619606.1A CN109167576A (en) | 2018-06-13 | 2018-06-13 | Low-noise amplifier and electronic equipment |
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| CN109167576A true CN109167576A (en) | 2019-01-08 |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022266A (en) * | 2006-09-28 | 2007-08-22 | 威盛电子股份有限公司 | Power amplifier |
| US20100127776A1 (en) * | 2008-11-26 | 2010-05-27 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Amplifier with bias circuit providing improved linearity |
| CN101888210A (en) * | 2010-07-16 | 2010-11-17 | 上海集成电路研发中心有限公司 | Variable gain low-noise amplifier |
| CN102386855A (en) * | 2010-08-31 | 2012-03-21 | 韩国科学技术院 | Low Noise Amplifier and Wireless Receiver with High Linearity and Low Noise |
| CN103095224A (en) * | 2013-01-29 | 2013-05-08 | 天津大学 | Complementary metal-oxide-semiconductor transistor (CMOS) broadband low-noise amplifier adopting noise cancellation technology |
| CN107294502A (en) * | 2016-04-12 | 2017-10-24 | 香港城市大学 | A circuit and method for facilitating bandwidth enhancement of a low noise amplifier |
| CN107769736A (en) * | 2017-10-13 | 2018-03-06 | 西安电子科技大学 | Automatic biasing wideband low noise amplifier |
| CN107994872A (en) * | 2017-11-07 | 2018-05-04 | 天津大学 | Big Dipper ground receiver high-gain broadband CMOS low-noise amplifiers |
-
2018
- 2018-06-13 CN CN201810619606.1A patent/CN109167576A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022266A (en) * | 2006-09-28 | 2007-08-22 | 威盛电子股份有限公司 | Power amplifier |
| US20100127776A1 (en) * | 2008-11-26 | 2010-05-27 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Amplifier with bias circuit providing improved linearity |
| CN101888210A (en) * | 2010-07-16 | 2010-11-17 | 上海集成电路研发中心有限公司 | Variable gain low-noise amplifier |
| CN102386855A (en) * | 2010-08-31 | 2012-03-21 | 韩国科学技术院 | Low Noise Amplifier and Wireless Receiver with High Linearity and Low Noise |
| CN103095224A (en) * | 2013-01-29 | 2013-05-08 | 天津大学 | Complementary metal-oxide-semiconductor transistor (CMOS) broadband low-noise amplifier adopting noise cancellation technology |
| CN107294502A (en) * | 2016-04-12 | 2017-10-24 | 香港城市大学 | A circuit and method for facilitating bandwidth enhancement of a low noise amplifier |
| CN107769736A (en) * | 2017-10-13 | 2018-03-06 | 西安电子科技大学 | Automatic biasing wideband low noise amplifier |
| CN107994872A (en) * | 2017-11-07 | 2018-05-04 | 天津大学 | Big Dipper ground receiver high-gain broadband CMOS low-noise amplifiers |
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Application publication date: 20190108 |
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| RJ01 | Rejection of invention patent application after publication |