CN109166979A - A kind of el display device and preparation method thereof - Google Patents
A kind of el display device and preparation method thereof Download PDFInfo
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- CN109166979A CN109166979A CN201810908091.7A CN201810908091A CN109166979A CN 109166979 A CN109166979 A CN 109166979A CN 201810908091 A CN201810908091 A CN 201810908091A CN 109166979 A CN109166979 A CN 109166979A
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- lug boss
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- 238000002360 preparation method Methods 0.000 title claims description 11
- 239000010410 layer Substances 0.000 claims abstract description 128
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 239000002346 layers by function Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 3
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052762 osmium Inorganic materials 0.000 claims description 3
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000000395 magnesium oxide Substances 0.000 claims description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 18
- 238000005516 engineering process Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910000421 cerium(III) oxide Inorganic materials 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- ZEWMZYKTKNUFEF-UHFFFAOYSA-N indium;oxozinc Chemical compound [In].[Zn]=O ZEWMZYKTKNUFEF-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/816—Multilayers, e.g. transparent multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of el display devices, including substrate, the tft array layer being set on substrate, and it is set to the top emitting device on tft array layer, substrate is equipped with pixel light emission area and non-pixel light emission area, top emitting device includes the hearth electrode being set in turn on tft array layer, light emitting functional layer and top electrode, top electrode includes the first including transparent conducting oxide layer, metal layer and the second including transparent conducting oxide layer being sequentially arranged in light emitting functional layer, and metal layer includes the first flat part and the first lug boss.The present invention is respectively additionally arranged layer of transparent conductive oxide layer by the opposite sides in metal layer, effectively improves the transmitance of top electrode.Moreover, by metal layer on counterpart substrate non-pixel light emission region part carry out again deposit make its thickness increase, the surface resistance of top electrode is reduced with this, finally solves the problems, such as el display device voltage drop, and improve display effect.
Description
Technical field
The invention belongs to field of display technology, and in particular to a kind of el display device and preparation method thereof.
Background technique
New display technology based on electroluminescent principle just gradually substitutes original display technology.It shows and applies in large scale
In field, pixel aperture ratio can be greatly increased using top emitting device in el display device, so as to realize more
High resolution ratio, higher brightness and lower power consumption.And top emitting device is needed using top electrode, and top electrode needs to have
Standby sufficiently high transmitance and sufficiently low surface resistance, otherwise el display device just will appear asking for serious voltage drop
Topic.Currently, someone covers luminous zone with the first cathode, improved with the edge of the second cathode covering luminous zone and non-light-emitting area
Cross rate.But the above method is since luminous zone is at least partially obscured to influence whether illumination effect, and the above method can not drop
The surface resistance of low top electrode.
Summary of the invention
In consideration of it, the present invention provides a kind of el display devices and preparation method thereof, by top electrode
The opposite sides of metal layer adds layer of transparent conductive oxide layer respectively to improve the transmitance of top electrode, by will be in metal layer
The part in corresponding non-pixel light emission region thickeies to reduce the surface resistance of top electrode.
First aspect present invention provides a kind of el display device, including substrate, is set on the substrate
Tft array layer, and the top emitting device being set on the tft array layer, the substrate are equipped with pixel light emission area and non-
Pixel light emission area, the top emitting device include hearth electrode, light emitting functional layer and the top being set in turn on the tft array layer
Electrode, the top electrode include the first including transparent conducting oxide layer being sequentially arranged in the light emitting functional layer, metal layer and
Two including transparent conducting oxide layers, the metal layer include the first flat part and the first lug boss, and first lug boss is described
The orthographic projection of substrate surface is overlapped with the non-pixel light emission area, and second including transparent conducting oxide layer includes the second flat part
With the second lug boss, second lug boss is in the orthographic projection of the substrate surface and first lug boss in the substrate table
The orthographic projection in face overlaps.
Wherein, the thickness of first lug boss is not less than the thickness of first flat part.
Wherein, the surface of first lug boss is flat to the vertical range on the surface of second lug boss and described second
The thickness in smooth portion is equal.
Wherein, the refractive index of first including transparent conducting oxide layer and second including transparent conducting oxide layer is greater than 2.
Wherein, first flat part with a thickness of 5-20nm, first lug boss with a thickness of 20-100nm.
Wherein, second flat part with a thickness of 10-100nm.
Wherein, the material of first including transparent conducting oxide layer and second including transparent conducting oxide layer is respectively selected from
Indium oxide, tin oxide, indium-zinc oxide, zinc oxide, cerium sesquioxide, gallium oxide, molybdenum trioxide, magnesia, tungstic acid and
One of titanium dioxide is a variety of.
Wherein, the material of the metal layer include one of Au Ag Pt Pd, copper, aluminium, nickel, rhodium, ruthenium, iridium and osmium or
It is a variety of.
Wherein, a cover board is additionally provided on the top emitting device, the cover board and the substrate pass through encapsulating structure
It is connected, the tft array layer and the top emitting device is encapsulated.
A kind of el display device that first aspect present invention provides, passes through the opposite of the metal layer in top electrode
Two sides are respectively additionally arranged layer of transparent conductive oxide layer, therefore effectively improve the transmitance of top electrode.Moreover, by metal layer
The part in non-pixel light emission region deposit again reducing top electrode increase its thickness with this on middle counterpart substrate
Surface resistance.El display device provided by the invention can effectively improve the transmitance of top electrode, reduce the face of top electrode
Resistance, and then efficiently solve the problems, such as el display device voltage drop, and improve display effect.
Second aspect of the present invention provides a kind of preparation method of el display device, comprising the following steps:
Substrate is provided, the substrate includes pixel light emission area and non-pixel light emission area, forms tft array on the substrate
Layer, then forms top emitting device on the tft array layer, then by the substrate, the tft array layer and the top-emitter
Part is packaged, and obtains el display device；
The top emitting device includes the hearth electrode being sequentially formed on the tft array layer, light emitting functional layer and top electricity
Pole, the top electrode include the first including transparent conducting oxide layer being sequentially formed in the light emitting functional layer, metal layer and
Two including transparent conducting oxide layers, the metal layer include the first flat part and the first lug boss, and first lug boss is described
The orthographic projection of substrate surface is overlapped with the non-pixel light emission area, and second including transparent conducting oxide layer includes the second flat part
With the second lug boss, second lug boss is in the orthographic projection of the substrate surface and first lug boss in the substrate table
The orthographic projection in face overlaps.
A kind of preparation method for el display device that second aspect of the present invention provides, simple process and low cost,
The top electrode that high transmittance, low areal resistance can be prepared by simple technique, efficiently solves electroluminance display
The problem of device voltage drop, improves display effect.
Detailed description of the invention
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to required in the embodiment of the present invention
The attached drawing used is illustrated.
Fig. 1 is the structural schematic diagram of top electrode in the embodiment of the present invention；
Fig. 2 is the structural schematic diagram of el display device in the embodiment of the present invention；
Fig. 3 is the structural schematic diagram of el display device in the embodiment of the present invention；
Fig. 4 a- Fig. 4 e is the preparation method flow chart of el display device in the embodiment of the present invention.
Specific embodiment
It is the preferred embodiment of the present invention below, it is noted that for those skilled in the art,
Various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as this hair
Bright protection scope.
Fig. 1-Fig. 3, a kind of el display device provided in an embodiment of the present invention, including substrate 1 are please referred to, is set to
Tft array layer 2 on the substrate 1, and the top emitting device 8 being set on the tft array layer 2 are set on the substrate 1
There are pixel light emission area 12 and non-pixel light emission area 11, the top emitting device 8 includes being set in turn on the tft array layer 2
Hearth electrode 3, light emitting functional layer 4 and top electrode 5, the top electrode 5 include be sequentially arranged in the light emitting functional layer 4 first
Including transparent conducting oxide layer 51, metal layer 52 and the second including transparent conducting oxide layer 53, the metal layer 52 include first flat
Portion 521 and the first lug boss 522, orthographic projection and the non-pixel light emission of first lug boss 522 on 1 surface of substrate
Area 11 be overlapped, second including transparent conducting oxide layer 53 include the second flat part 531 and the second lug boss 532, described second
Orthographic projection orthographic projection phase with first lug boss 522 on substrate 1 surface of the lug boss 532 on 1 surface of substrate
Overlapping.
First lug boss 522 mentioned in the present invention is sent out in the orthographic projection on 1 surface of substrate and the non-pixel
Light area 11 is overlapped the shape for referring to orthographic projection of first lug boss 522 on 1 surface of substrate and size and non-pixel is sent out
Light area 11 is completely the same.And second lug boss 532 mentioned in the present invention 1 surface of substrate orthographic projection with it is described
Orthographic projection of first lug boss 522 on 1 surface of substrate, which overlaps, to be referred to since the second lug boss 532 is based on the first protrusion
Deposition obtains under the premise of portion 522, therefore orthographic projection of second lug boss 532 on 1 surface of substrate includes institute
The first lug boss 522 is stated in the orthographic projection on 1 surface of substrate, i.e., described first lug boss 522 1 surface of substrate just
Projection is completely disposed at second lug boss 532 within the orthographic projection on 1 surface of substrate.
A kind of el display device provided in an embodiment of the present invention, firstly, metal layer of the present invention in top electrode 5
52 opposite sides is respectively additionally arranged layer of transparent conductive oxide layer, due to transparent conductive oxide inherently have it is high saturating
Rate is crossed, therefore effectively improves the transmitance of top electrode 5.Secondly, by 1 Shang Fei pixel light emission area of counterpart substrate in metal layer 52
The part in 11 domains deposit again increase its thickness, the metal layer 52 of non-luminous region part do not need to carry out it is luminous,
Therefore to the of less demanding of transmitance, and the thickness of metal layer 52 is related to the surface resistance of top electrode 5, and the thickness of metal layer 52 increases
Add, the surface resistance of top electrode 5 can reduce.So the surface resistance of top electrode 5 can be reduced by above-mentioned setting.It is provided by the invention
El display device can effectively improve the transmitance of top electrode 5, reduce the surface resistance of top electrode 5, efficiently solve
The problem of el display device voltage drop, and improve display effect.
In embodiment of the present invention, a cover board 7, the cover board 7 and the base are additionally provided on the top emitting device 8
Plate 1 is connected by encapsulating structure, and the tft array layer 2 and the top emitting device 8 are encapsulated.Specifically, it please refers to
Fig. 3, in embodiments of the present invention, el display device have specifically included substrate 1 and have been set in turn on the substrate 1
Tft array layer 2, hearth electrode 3, the first including transparent conducting oxide layer 51, metal layer 52, the second including transparent conducting oxide layer 53,
It is equipped with an encapsulated layer 6 in the edge of substrate 1, a cover board 7, cover board are additionally provided on the second including transparent conducting oxide layer 53
7, substrate 1 and encapsulated layer 6 form a confined space and encapsulate above layers, play the role of protection.
In embodiment of the present invention, the top emitting device 8 includes in organic luminescent device and quantum dot light emitting device
It is one or more.
In embodiment of the present invention, the thickness of first lug boss 522 is greater than 0.The thickness of first lug boss 522 only has
Greater than 0, the surface resistance of top electrode 5 could be reduced.
In embodiment of the present invention, the thickness of first lug boss 522 is not less than the thickness of first flat part 521
Degree.Specifically, the thickness of first lug boss 522 is greater than or equal to the thickness of first flat part 521.First lug boss
If 522 thickness is less than the thickness of the first flat part 521, then the effect that 5 surface resistance of top electrode reduces is unobvious.
In embodiment of the present invention, surface the hanging down to the surface of second lug boss 532 of first lug boss 522
Straight distance is equal with the thickness of second flat part 531.Being equidistant for the two is the difficulty for reducing technique first, makes to prepare
Become simpler, secondly can promote the transmitance in non-pixel light emission area 11 and then promote the transmitance of entire top electrode 5.
In embodiment of the present invention, first including transparent conducting oxide layer 51 and second including transparent conducting oxide layer
53 refractive index is greater than 2.Refractive index is bigger, and the transmitance of oxidic, transparent, conductive layers is higher.
In embodiment of the present invention, first flat part 521 with a thickness of 5-20nm, first lug boss 522
With a thickness of 20-100nm.Preferably, first flat part 521 with a thickness of 10-15nm, the thickness of first lug boss 522
Degree is 30-80nm.
In embodiment of the present invention, second flat part 531 with a thickness of 10-100nm.Preferably, described second is flat
Smooth portion 531 with a thickness of 20-80nm.It is highly preferred that second flat part 531 with a thickness of 30-70nm.
In embodiment of the present invention, first including transparent conducting oxide layer 51 with a thickness of 10-100nm.Preferably, institute
State the first including transparent conducting oxide layer 51 with a thickness of 20-80nm.It is highly preferred that first including transparent conducting oxide layer 51
With a thickness of 30-70nm.
In embodiment of the present invention, the top electrode 5 with a thickness of 45-320nm.Top electrode 5 it is transparent with a thickness of first
The thickness of conductive oxide layer 51, preferably, the top electrode 5 with a thickness of 80-255nm.
In embodiment of the present invention, first including transparent conducting oxide layer 51 and second including transparent conducting oxide layer
53 material is respectively selected from indium oxide, tin oxide, indium-zinc oxide, zinc oxide, cerium sesquioxide, gallium oxide, molybdenum trioxide, oxygen
Change one of magnesium, tungstic acid and titanium dioxide or a variety of.The material of including transparent conducting oxide layer all has good transmission
Rate and the good material of conductive effect, can greatly improve the transmitance and conductivity of el display device.
In embodiment of the present invention, the material of the metal layer 52 includes Au Ag Pt Pd, copper, aluminium, nickel, rhodium, ruthenium, iridium
With one of osmium or a variety of.The material of metal layer 52 is low-resistance material with good conductivity.It can be greatly
Improve the conductivity of el display device.
A kind of preparation method of el display device provided in an embodiment of the present invention, comprising the following steps:
Substrate 1 is provided, the substrate 1 includes pixel light emission area 12 and non-pixel light emission area 11, is formed on the substrate 1
Tft array layer 2, then top emitting device 8 is formed on the tft array layer 2, then by the substrate 1,2 and of tft array layer
The top emitting device 8 is packaged, and obtains el display device；
The top emitting device 8 includes hearth electrode 3,4 and of light emitting functional layer being sequentially formed on the tft array layer 2
Top electrode 5, the top electrode 5 include the first including transparent conducting oxide layer 51 being sequentially formed in the light emitting functional layer 4, gold
Belonging to layer 52 and the second including transparent conducting oxide layer 53, the metal layer 52 includes the first flat part 521 and the first lug boss 522,
Orthographic projection of first lug boss 522 on 1 surface of substrate is overlapped with the non-pixel light emission area 11, and described second is transparent
Conductive oxide layer 53 includes the second flat part 531 and the second lug boss 532, and second lug boss 532 is in 1 table of substrate
Orthographic projection of the orthographic projection in face with first lug boss 522 on 1 surface of substrate overlaps.
A kind of preparation method of el display device provided in an embodiment of the present invention, simple process and low cost can
The top electrode 5 that high transmittance, low areal resistance can be prepared by simple technique, efficiently solves el display device
The problem of voltage drop, improves display effect.
In embodiment of the present invention, the light emitting functional layer 4 is prepared using evaporation process or inkjet printing technology.
In embodiment of the present invention, the first including transparent conducting oxide layer 51 and the second including transparent conducting oxide layer 53 are to utilize
Magnetron sputtering technique is prepared.
In embodiment of the present invention, metal layer 52 is prepared using magnetron sputtering or evaporation process.
Specifically, the embodiment of the invention provides the preparation methods of el display device, comprising the following steps:
Step 1: providing substrate 1, substrate 1 is equipped with pixel light emission area 12 and non-pixel light emission area 11, passes through photoetching process
Tft array layer 2 is formed on substrate 1, then hearth electrode 3 is formed on tft array layer 2 by photoetching process.
Step 2: light emitting functional layer 4 being formed on hearth electrode 3 by inkjet printing technology, then is existed by magnetron sputtering technique
The first including transparent conducting oxide layer 51 is formed in light emitting functional layer 4, the material of the first including transparent conducting oxide layer 51 is indium zinc oxygen
Compound, the first including transparent conducting oxide layer 51 with a thickness of 40nm.
Step 3: the first flat part 521 being formed on the first including transparent conducting oxide layer 51 by evaporation process, first is flat
The material in smooth portion 521 be silver, the first flat part 521 with a thickness of 15nm, then by evaporation process the first flat part 521 table
Face forms the first lug boss 522, non-pixel light emission area 11 of first lug boss 522 in the orthographic projection on 1 surface of substrate and substrate 1
Be overlapped, the material of the first lug boss 522 is silver, the first lug boss 522 with a thickness of 35nm, the first flat part 521 and first is convex
It plays portion 522 and constitutes metal layer 52.
Step 4: forming the second including transparent conducting oxide layer 53 on metal layer 52 by magnetron sputtering technique, second is transparent
Conductive oxide layer 53 includes the second flat part 531 and the second lug boss 532, positive throwing of second lug boss 532 on 1 surface of substrate
Orthographic projection of the shadow with the first lug boss 522 on 1 surface of substrate overlaps, the second flat part 531 it is flat with a thickness of 40nm, second
The material of portion 531 and the second lug boss 532 is indium-zinc oxide, wherein the first including transparent conducting oxide layer 51,52 and of metal layer
Second including transparent conducting oxide layer 53 constitutes top electrode 5, and hearth electrode 3, light emitting functional layer 4 and top electrode 5 constitute top emitting device
8。
Step 5: a cover board 7 being provided, encapsulating structure is formed by encapsulated layer 6 between cover board 7 and substrate 1, by tft array
Layer 2 and top emitting device 8 protect, and finally obtain el display device.
Content provided by embodiment of the present invention is described in detail above, herein to the principle of the present invention and reality
The mode of applying is expounded and illustrates, described above to be merely used to help understand method and its core concept of the invention；Meanwhile
For those of ordinary skill in the art, according to the thought of the present invention, has change in specific embodiments and applications
Become place, in conclusion the contents of this specification are not to be construed as limiting the invention.
Claims (10)
1. a kind of el display device, which is characterized in that including substrate, the tft array layer being set on the substrate, with
And it is set to the top emitting device on the tft array layer, the substrate is equipped with pixel light emission area and non-pixel light emission area, institute
Stating top emitting device includes hearth electrode, light emitting functional layer and the top electrode being set in turn on the tft array layer, the top electricity
Pole includes the first including transparent conducting oxide layer, metal layer and the second transparent conductive oxide being sequentially arranged in the light emitting functional layer
Nitride layer, the metal layer include the first flat part and the first lug boss, positive throwing of first lug boss in the substrate surface
Shadow is overlapped with the non-pixel light emission area, and second including transparent conducting oxide layer includes the second flat part and the second lug boss,
Second lug boss the substrate surface orthographic projection and first lug boss the substrate surface orthographic projection phase
Overlapping.
2. el display device as described in claim 1, which is characterized in that the thickness of first lug boss is not less than
The thickness of first flat part.
3. el display device as described in claim 1, which is characterized in that the surface of first lug boss is described in
The vertical range on the surface of the second lug boss is equal with the thickness of second flat part.
4. el display device as described in claim 1, which is characterized in that first including transparent conducting oxide layer and
The refractive index of second including transparent conducting oxide layer is greater than 2.
5. el display device as described in claim 1, which is characterized in that first flat part with a thickness of 5-
20nm, first lug boss with a thickness of 20-100nm.
6. el display device as described in claim 1, which is characterized in that second flat part with a thickness of 10-
100nm。
7. el display device as described in claim 1, which is characterized in that first including transparent conducting oxide layer and
The material of second including transparent conducting oxide layer is respectively selected from indium oxide, tin oxide, indium-zinc oxide, zinc oxide, three oxidations
One of two ceriums, gallium oxide, molybdenum trioxide, magnesia, tungstic acid and titanium dioxide are a variety of.
8. el display device as described in claim 1, which is characterized in that the material of the metal layer include gold, silver,
One of platinum, palladium, copper, aluminium, nickel, rhodium, ruthenium, iridium and osmium are a variety of.
9. el display device as described in claim 1, which is characterized in that be additionally provided on the top emitting device
One cover board, the cover board and the substrate are connected by encapsulating structure, and the tft array layer and the top emitting device are sealed
It loads.
10. a kind of preparation method of el display device, which comprises the following steps:
Substrate is provided, the substrate includes pixel light emission area and non-pixel light emission area, tft array layer is formed on the substrate,
Form top emitting device on the tft array layer again, then by the substrate, the tft array layer and the top emitting device
It is packaged, obtains el display device；
The top emitting device includes hearth electrode, light emitting functional layer and the top electrode being sequentially formed on the tft array layer, institute
Stating top electrode includes that the first including transparent conducting oxide layer being sequentially formed in the light emitting functional layer, metal layer and second are transparent
Conductive oxide layer, the metal layer include the first flat part and the first lug boss, and first lug boss is in the substrate table
The orthographic projection in face is overlapped with the non-pixel light emission area, and second including transparent conducting oxide layer includes the second flat part and second
Lug boss, second lug boss the substrate surface orthographic projection and first lug boss the substrate surface just
Projection overlaps.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810908091.7A CN109166979A (en) | 2018-08-09 | 2018-08-09 | A kind of el display device and preparation method thereof |
| PCT/CN2019/072235 WO2020029548A1 (en) | 2018-08-09 | 2019-01-17 | Electroluminescent display device and preparation method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810908091.7A CN109166979A (en) | 2018-08-09 | 2018-08-09 | A kind of el display device and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
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| CN109166979A true CN109166979A (en) | 2019-01-08 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810908091.7A Pending CN109166979A (en) | 2018-08-09 | 2018-08-09 | A kind of el display device and preparation method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109166979A (en) |
| WO (1) | WO2020029548A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2020029548A1 (en) * | 2018-08-09 | 2020-02-13 | 深圳市华星光电半导体显示技术有限公司 | Electroluminescent display device and preparation method therefor |
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| Publication number | Publication date |
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| WO2020029548A1 (en) | 2020-02-13 |
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