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CN109116604B - Method for manufacturing display panel through mixed cutting and display panel - Google Patents

Method for manufacturing display panel through mixed cutting and display panel Download PDF

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CN109116604B
CN109116604B CN201811053931.2A CN201811053931A CN109116604B CN 109116604 B CN109116604 B CN 109116604B CN 201811053931 A CN201811053931 A CN 201811053931A CN 109116604 B CN109116604 B CN 109116604B
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substrate
coa type
forming
color resist
resist layer
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CN109116604A (en
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杨帆
徐向阳
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TCL China Star Optoelectronics Technology Co Ltd
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133351Manufacturing of individual cells out of a plurality of cells, e.g. by dicing

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  • Nonlinear Science (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract

The invention discloses a method for manufacturing a display panel by mixed cutting and the display panel. The method comprises the following steps: providing a first substrate and a second substrate; forming a COA type array part and a non-COA type array part on the first substrate, and forming an achromatic color resist filter part and a chromatic color resist filter part on the second substrate; assembling the first substrate and the second substrate in a pair case such that the COA type array part is aligned with the corresponding achromatic color filter part in a pair case and the non-COA type array part is aligned with the corresponding chromatic color filter part in a pair case; and cutting the first substrate and the second substrate after the pair of boxes are assembled to form a COA type display panel and a non-COA type display panel. The method for manufacturing the display panel by mixed cutting can be compatible with the difference of color resistance process technology in the mixed cutting scheme, and the flexibility of the mixed cutting technology is improved.

Description

Method for manufacturing display panel through mixed cutting and display panel
Technical Field
The invention belongs to the field of display panel manufacturing technologies, and particularly relates to a method for manufacturing a display panel through mixed cutting and the display panel.
Background
With the development of advanced liquid crystal display panel manufacturing technology, a hybrid cutting scheme, i.e., a scheme of manufacturing display panels of two or more dimensions on the same glass substrate, becomes an effective way to improve the panel utilization rate. In the existing mixed cutting scheme, the manufacturing processes of the display panels with different sizes are completely consistent, and the method cannot be applied to integration of the display panels with different manufacturing process requirements. For example, in the manufacturing of the color resist layer, there are only two cases at present, the first case is to form the color resist layer only on the lower substrate, and the second case is to form the color resist layer only on the upper substrate, and the positions of the color resist layers finally forming the display panels with different sizes are completely the same, so that the mixed cutting scheme cannot better take account of the difference of the manufacturing processes, and is not beneficial to improving the mixed cutting technology of the high-generation panels.
Disclosure of Invention
In order to solve the above-mentioned deficiencies of the prior art, the present invention provides a method for manufacturing a display panel by hybrid cutting with consideration of process variability and a display panel.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method of mixedly cutting a display panel, the method comprising:
providing a first substrate and a second substrate;
forming a COA type array part and a non-COA type array part on the first substrate, and forming an achromatic color resist filter part and a chromatic color resist filter part on the second substrate;
assembling the first substrate and the second substrate in a pair case such that the COA type array part is aligned with the corresponding achromatic color filter part in a pair case and the non-COA type array part is aligned with the corresponding chromatic color filter part in a pair case;
and cutting the first substrate and the second substrate after the pair of boxes are assembled to form a COA type display panel and a non-COA type display panel.
Preferably, the size of the COA type display panel and the size of the non-COA type display panel are different.
Preferably, if the number of the COA type display panels is two, the sizes of the two COA type display panels are different; if the number of the COA type display panels is at least three, the sizes of at least two of the at least three COA type display panels are different.
Preferably, if the number of the non-COA type display panels is two, the sizes of the two non-COA type display panels are different; if the number of the non-COA type display panels is at least three, the sizes of at least two of the at least three non-COA type display panels are different.
Preferably, a region occupied by the COA type array portion on the first substrate is a first region, and a region occupied by the non-COA type array portion on the first substrate is a second region;
wherein the method of forming the COA type array portion and the non-COA type array portion on the first substrate includes:
forming a first display device in the first region, and simultaneously forming a second display device in the second region;
a first color resist layer is formed only on the first display device.
Preferably, the method of forming a color resist layer only on the first display device includes:
coating a first color resist layer on the first display device and the second display device;
and carrying out exposure and development treatment on the first color resist layer so as to remove part of the first color resist layer on the second display device and retain part of the first color resist layer on the first display device.
Preferably, the method of forming a first display device in the first region and simultaneously forming a second display device in the second region includes:
forming a data line, a scanning line and a thin film transistor in the first region and the second region, wherein the data line and the scanning line are arranged in a crossed manner, the source electrode of the thin film transistor is connected to the data line, and the grid electrode of the thin film transistor is connected to the scanning line;
forming a pixel electrode in an intersection area of the data line and the scan line, wherein an area occupied by the achromatic color filter portion on the second substrate between the pixel electrode and the thin film transistor is a third area, and an area occupied by the chromatic color filter portion on the second substrate is a fourth area;
wherein the method of forming the achromatic color filter and the chromatic color filter on the second substrate includes:
forming a black matrix in the third region, and simultaneously forming a black matrix in the fourth region;
and forming a second color resist layer only in the fourth region. The drain is connected.
Preferably, the method of forming the second color resist layer only in the fourth area includes:
coating a second color resist layer in the third area and the fourth area;
and carrying out exposure and development treatment on the second color resist layer to remove part of the second color resist layer in the third area and retain part of the second color resist layer in the fourth area.
The invention also discloses a display panel manufactured by the method for manufacturing the display panel by mixed cutting.
Has the advantages that: according to the method for manufacturing the display panel by mixed cutting, the COA type array part and the non-COA type array part are respectively formed on the first substrate, the achromatic color resistance light filtering part and the chromatic color resistance light filtering part are formed on the second substrate, so that the COA type array part and the achromatic color resistance light filtering part are arranged in a box, the non-COA type array part and the chromatic color resistance light filtering part are arranged in a box, and finally the COA type display panel and the non-COA type display panel are obtained by cutting.
Drawings
FIG. 1 is a flowchart illustrating a method for fabricating a display panel by hybrid cutting according to an embodiment of the present invention;
FIG. 2 is a top view of a first substrate according to an embodiment of the invention;
FIG. 3 is a top view of a second substrate according to an embodiment of the invention;
FIG. 4 is a cross-sectional view of a display panel according to an embodiment of the present invention;
FIG. 5 is an enlarged view of a portion of FIG. 4 at A;
fig. 6 is a top view of a first display device of an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
With the development of advanced panel technology, in order to increase the utilization rate of glass substrates, a mixed cutting scheme is generally adopted in the industry at present, i.e., a plurality of sub-display panels with different sizes are manufactured and formed on the same large-size glass substrate, and finally, the sub-display panels are cut to obtain panels with various sizes. The display panels mentioned in the following embodiments are all uncut display panels integrating sub-display panels of various sizes, and the types of the display panels include, but are not limited to, liquid crystal display panels and OLED display panels.
Fig. 1 shows a flowchart of a method for hybrid cutting to fabricate a display panel according to an embodiment of the present invention, the method including steps S1 to S4:
step S1: a first substrate 10 and a second substrate 20 are provided. As a preferred embodiment, the first substrate 10 and the second substrate 20 are both large-sized glass substrates.
Step S2: as shown in fig. 2 and 3, the COA type array portion 30 and the non-COA type array portion 40 are formed on the first substrate 10, and the achromatic color filter portion 50 and the chromatic color filter portion 60 are formed on the second substrate 20.
Specifically, the area occupied by the COA type array portion 30 on the first substrate 10 is a first area 11, and the area occupied by the non-COA type array portion 40 on the first substrate 10 is a second area 12.
The method of forming the COA type array portion 30 and the non-COA type array portion 40 on the first substrate 10 includes the steps S201 to S202 as follows:
step S201: as shown in fig. 4, a first display device 31 is formed in the first region 11, while a second display device is formed in the second region 12.
In the actual manufacturing process, the first display device 31 and the second display device are simultaneously formed on the first substrate 10, and the manufacturing process of the devices is obviously illustrated below by taking the first display device 31 as an example.
The first step is as follows: as shown in fig. 5 and 6, a data line 310, a scan line 311, and a thin film transistor 313 are formed in the first region 11, wherein the data line 310 and the scan line 311 are arranged to intersect, a source 314 of the thin film transistor 313 is connected to the data line 310, and a gate 315 of the thin film transistor 313 is connected to the scan line 311.
Specifically, a Physical Vapor Deposition (PVD) process is used to deposit a first metal material on the first substrate 10, wherein the first metal material includes, but is not limited to, Al, Mo and Cu, and has a thickness of
Figure GDA0002967169590000041
The first metal material is subjected to exposure treatment, development treatment, wet etching treatment and stripping by adopting a first mask process, and finally the gate 315 and the scanning line 311 are formed.
Further, Plasma Enhanced Chemical Vapor deposition (Plasma Enhanced Chemical Vapor deposition) is employedon, PECVD) process deposits silicon nitride (SiN) on the first substrate 10 and the gate 315x) To form a gate insulating layer 320 of silicon nitride thickness
Figure GDA0002967169590000051
Further, an amorphous silicon (a-si) thin film and an N-type doped amorphous silicon (N + a-si) thin film are sequentially deposited on the gate insulating layer 320 by using a PECVD process, wherein the amorphous silicon thin film has a thickness of
Figure GDA0002967169590000055
The thickness of the N-type doped amorphous silicon thin film is that the amorphous silicon thin film and the N-type doped amorphous silicon thin film are subjected to exposure treatment, development treatment, dry etching treatment and stripping by adopting a second mask process to form an active layer 316, a first ohmic contact layer 317 and a second ohmic contact layer 318, wherein the first ohmic contact layer 317 and the second ohmic contact layer 318 are respectively positioned on two opposite sides of the active layer 316.
Further, a second metal material is deposited on the gate insulating layer 320, the first ohmic contact layer 317, the second ohmic contact layer 318 and the active layer 316 using a PVD process, the second metal material including, but not limited to, Al, Mo and Cu, and having a thickness of
Figure GDA0002967169590000052
And performing exposure treatment, development treatment, wet etching treatment, channel dry etching treatment and stripping on the second metal material by adopting a third mask process to finally form a source electrode 314, a drain electrode 312 and a data line 310.
Further, a PECVD process is used to deposit silicon nitride (SiN) on the active layer 316, the source 314, the drain 312 and the gate insulating layer 320x) Film to form a passivation layer 340, thickness of silicon nitride film
Figure GDA0002967169590000053
Figure GDA0002967169590000054
The second step is as follows: a pixel electrode 330 is formed in an intersection region of the data line 310 and the scan line 311, and the pixel electrode 330 is connected to a drain 312 of the thin film transistor 313.
Further, before the pixel electrode 330 is formed, the passivation layer 340 is etched to form a first via hole (not shown) on the passivation layer 340, wherein the first via hole exposes a portion of the drain electrode 312. Next, a transparent conductive material is deposited on the first substrate 10 such that the transparent conductive material is deposited in the crossing region of the data line 310 and the scan line 311, and a portion of the transparent conductive material is deposited in the first via hole, such that the pixel electrode 330 is formed on the first substrate 10, and an extended portion of the pixel electrode 330 is connected to the drain electrode 312 through the first via hole.
Step S202: the first color resist layer 33 is formed only on the first display device 31.
The method specifically comprises the following steps:
coating a first color resist layer 33 on the first display device 31 and the second display device;
the first color resist layer 33 is subjected to exposure and development processes to remove a portion of the first color resist layer 33 on the second display device and leave a portion of the first color resist layer 33 on the first display device 31.
Specifically, the area occupied by the achromatic color filter portion 50 on the second substrate 20 is a third area 21, and the area occupied by the chromatic color filter portion 60 on the second substrate 20 is a fourth area 22.
The method of forming the achromatic color filter portion 50 and the chromatic color filter portion 60 on the second substrate 20 specifically includes steps S211 to S212:
step S211: the black matrix 62 is formed in the third region 21, while the black matrix 62 is formed in the fourth region 22.
Step S212: the color resist layer 61 is formed only in the fourth region 22
Specifically, the steps include:
coating a second color resist layer 61 in the third area 21 and the fourth area 22 of the second substrate 20;
the second color resist layer 61 is subjected to exposure and development processes to remove a portion of the second color resist layer 61 in the third region 21 and leave a portion of the second color resist layer 61 in the fourth region 22.
Step S3: the first substrate 10 and the second substrate 20 are assembled into a case such that the COA type array part 30 is assembled into a case with the corresponding achromatic color filter part 50 and the non-COA type array part 40 is assembled into a case with the corresponding chromatic color filter part 60.
Step S4: the first substrate 10 and the second substrate 20 assembled with the pair of cassettes are cut to form a COA type display panel and a non-COA type display panel.
The sizes of the COA type display panel and the non-COA type display panel manufactured by the method are different. If the number of the COA type display panels is two, the sizes of the two COA type display panels are different; if the number of the COA type display panels is at least three, the sizes of at least two of the at least three COA type display panels are different.
Further, if the number of the non-COA type display panels is two, the sizes of the two non-COA type display panels are different; if the number of the non-COA type display panels is at least three, the sizes of at least two of the at least three non-COA type display panels are different.
The invention also provides a display panel manufactured by the method for manufacturing the display panel by mixed cutting.
According to the method for manufacturing the display panel by mixed cutting, the COA type array part and the non-COA type array part are respectively formed on the first substrate, the achromatic color resistance light filtering part and the chromatic color resistance light filtering part are formed on the second substrate, so that the COA type array part and the achromatic color resistance light filtering part are arranged in a box, the non-COA type array part and the chromatic color resistance light filtering part are arranged in a box, and finally the COA type display panel and the non-COA type display panel are obtained by cutting.
Although a few embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents, and that such changes and modifications are intended to be within the scope of the invention.

Claims (9)

1. A method for manufacturing a display panel by mixed cutting is characterized by comprising the following steps:
providing a first substrate and a second substrate;
forming a COA type array part and a non-COA type array part on the first substrate, and forming an achromatic color resist filter part and a chromatic color resist filter part on the second substrate;
assembling the first substrate and the second substrate in a pair case such that the COA type array part is aligned with the corresponding achromatic color filter part in a pair case and the non-COA type array part is aligned with the corresponding chromatic color filter part in a pair case;
and cutting the first substrate and the second substrate after the pair of boxes are assembled to form a COA type display panel and a non-COA type display panel.
2. The method of claim 1, wherein the size of the COA type display panel and the non-COA type display panel are different.
3. The method according to claim 1 or 2, wherein if the number of the COA type display panels is two, the two COA type display panels are not the same size; if the number of the COA type display panels is at least three, the sizes of at least two of the at least three COA type display panels are different.
4. The method according to claim 1 or 2, wherein if the number of the non-COA type display panels is two, the two non-COA type display panels are not the same size; if the number of the non-COA type display panels is at least three, the sizes of at least two of the at least three non-COA type display panels are different.
5. The method of claim 1, wherein the area of the first substrate occupied by the COA type array portion is a first area and the area of the first substrate occupied by the non-COA type array portion is a second area;
wherein the method of forming the COA type array portion and the non-COA type array portion on the first substrate includes:
forming a first display device in the first region, and simultaneously forming a second display device in the second region;
a first color resist layer is formed only on the first display device.
6. The method of claim 5, wherein the method of forming a color resist layer only on the first display device comprises:
coating a first color resist layer on the first display device and the second display device;
and carrying out exposure and development treatment on the first color resist layer so as to remove part of the first color resist layer on the second display device and retain part of the first color resist layer on the first display device.
7. The method according to claim 5 or 6, wherein the method for forming a first display device in the first region and simultaneously forming a second display device in the second region comprises:
forming a data line, a scanning line and a thin film transistor in the first region and the second region, wherein the data line and the scanning line are arranged in a crossed manner, the source electrode of the thin film transistor is connected to the data line, and the grid electrode of the thin film transistor is connected to the scanning line;
and forming a pixel electrode in an intersection region of the data line and the scan line, the pixel electrode being connected to a drain electrode of the thin film transistor.
8. The method according to claim 1, wherein an area occupied by the achromatic color filter portion on the second substrate is a third area, and an area occupied by the chromatic color filter portion on the second substrate is a fourth area;
wherein the method of forming the achromatic color filter and the chromatic color filter on the second substrate includes:
forming a black matrix in the third region, and simultaneously forming a black matrix in the fourth region;
and forming a second color resist layer only in the fourth region.
9. The method of claim 8, wherein forming the second color resist layer only in the fourth area comprises:
coating a second color resist layer in the third area and the fourth area;
and carrying out exposure and development treatment on the second color resist layer to remove part of the second color resist layer in the third area and retain part of the second color resist layer in the fourth area.
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CN109613762A (en) * 2019-01-28 2019-04-12 深圳市华星光电半导体显示技术有限公司 Mixed for liquid crystal display panel cuts glass substrate and its glue spreading method
CN110316971B (en) * 2019-07-03 2021-09-24 Tcl华星光电技术有限公司 Method for etching mixed cutting glass substrate

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CN102385196A (en) * 2011-10-25 2012-03-21 深圳市华星光电技术有限公司 Liquid crystal display (LCD) panel and formation method thereof
CN102854649A (en) * 2011-06-30 2013-01-02 上海天马微电子有限公司 Liquid crystal display panel, liquid crystal display and manufacturing method of liquid crystal display panel

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Publication number Priority date Publication date Assignee Title
CN1637486A (en) * 2003-12-27 2005-07-13 Lg.菲利浦Lcd株式会社 Method for fabricating a liquid crystal display device
CN101221326A (en) * 2008-02-02 2008-07-16 友达光电股份有限公司 Motherboard of display panel and manufacturing method thereof
CN102854649A (en) * 2011-06-30 2013-01-02 上海天马微电子有限公司 Liquid crystal display panel, liquid crystal display and manufacturing method of liquid crystal display panel
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