CN109037358A - A method of promoting the board-like PECVD plated film production capacity of two-sided PERC battery - Google Patents
A method of promoting the board-like PECVD plated film production capacity of two-sided PERC battery Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 105
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 23
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract 13
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract 13
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract 13
- 230000001737 promoting effect Effects 0.000 title 1
- 238000000576 coating method Methods 0.000 claims abstract description 77
- 239000011248 coating agent Substances 0.000 claims abstract description 40
- 230000000750 progressive effect Effects 0.000 claims abstract description 19
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 40
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 36
- 101100023111 Schizosaccharomyces pombe (strain 972 / ATCC 24843) mfc1 gene Proteins 0.000 claims description 22
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 17
- 229910000077 silane Inorganic materials 0.000 claims description 17
- 229910021529 ammonia Inorganic materials 0.000 claims description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 12
- 239000001272 nitrous oxide Substances 0.000 claims description 12
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 9
- 235000013842 nitrous oxide Nutrition 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 4
- 239000004917 carbon fiber Substances 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 239000007921 spray Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 7
- 241000407429 Maja Species 0.000 description 14
- 238000002161 passivation Methods 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 239000011247 coating layer Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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Abstract
本发明公开了一种提升双面PERC电池板式PECVD镀膜产能的方法，涉及晶硅太阳能电池制造领域，解决了现有PECVD镀膜工艺不能够不降低电池片电性能的同时提高产能的问题。一种提升双面PERC电池板式PECVD镀膜产能的方法，通过背面渐进式镀膜工艺来提高双面PERC电池背面减反射效果，最终提高PERC电池双面率，从改善微波功率限制、特气流量限制、设备参数限制等入手，从而达到提升产能的目的。
The invention discloses a method for improving the production capacity of double-sided PERC battery plate type PECVD coating, relates to the field of crystalline silicon solar battery manufacturing, and solves the problem that the existing PECVD coating process cannot increase the production capacity without reducing the electrical performance of the battery sheet. A method to improve the production capacity of double-sided PERC battery plate PECVD coating, through the back progressive coating process to improve the anti-reflection effect on the back of double-sided PERC battery, and finally improve the double-sided rate of PERC battery, from improving microwave power limit, special gas flow limit, Start with the limitation of equipment parameters, etc., so as to achieve the purpose of increasing production capacity.
Description
技术领域technical field
本发明属于晶硅太阳能电池制造领域，更具体的是涉及一种提升双面PERC电池板式PECVD镀膜产能的方法。The invention belongs to the field of crystalline silicon solar cell manufacturing, and more specifically relates to a method for improving the production capacity of double-sided PERC cell plate type PECVD coating.
背景技术Background technique
目前，高效晶硅电池是太阳能电池的主流发展趋势，性价比占优的PERC(钝化发射极背面接触电池)将大量占据市场，已经成为标准的先进太阳能电池片技术。PERC电池需要背面钝化及背面镀膜工艺，可见镀膜工序是PERC电池片生产环节中最重要的一环，镀膜的质量直接影响到电池片的电性能。目前可以进行背钝化的比较先进的设备包括微导的ALD(原子层沉积)设备和梅耶博格的MAiA设备。梅耶博格的MAiA设备有多个工艺腔联结，可以完成背面氧化铝镀膜和氮化硅镀膜，甚至MAiA的3in 1设备可以一次性完成背面氧化铝、氮化硅和正面氮化硅的镀膜。MAiA的优点是镀膜均匀性好，一次性完成背面氧化铝和氮化硅镀膜的情况下可以减少环境污染，操作简单，缺点是产能比ALD设备略低，所以镀膜工序往往是晶硅太阳能电池片的产能瓶颈，释放镀膜工序的产能一直是晶硅电池企业所关心的问题。目前MAiA设备镀PERC电池背面氧化铝的钝化效果比ALD差，导致MAiA设备镀背面氧化铝膜的膜厚必须在20nm以上，而ALD设备镀氧化铝膜膜厚5～10nm就可以达到相同效果，MAiA采用尖端放电激发的氩气等离子体再激发三甲基铝，激发后的氩气和三甲基铝混合气体再与笑气反应，混合气体在石英管传导微波能量中电离，产生的等离子体在晶硅背表面形成镀膜层。这种镀膜方法中，微波功率的限制及特气总流量的限制就是限制MAiA等板式PECVD设备生产产能的主要原因，而厂商安装并调试MAiA镀膜设备后，起初提供的量产工艺菜单往往比较保守，考虑到设备的“磨合期”，并没有将特气电离度及等离子体沉积速率最佳程度匹配起来。尚德太阳能电力有限公司申请的专利(201711336123.2)，提供了一种提升管式PECVD工艺产能的方法，主要是从镀膜后辅助流程上实现工艺运行时间缩短，而且仅限于管式PECVD设备；苏州阿特斯阳光电力科技有限公司申请的专利(201621098512.7)，通过改变镀膜沉积槽磁场运行方向从而达到提高等离子体利用率，此种方法在MAiA上镀膜(石英管在镀膜电池片上方)设备上并无改进空间，改变磁场方向后的氩等离子体束斑的方向将改变。At present, high-efficiency crystalline silicon cells are the mainstream development trend of solar cells, and PERC (passivated emitter rear contact cells) with superior cost performance will occupy a large number of markets, and has become a standard advanced solar cell technology. PERC cells require backside passivation and backside coating processes. It can be seen that the coating process is the most important part of the PERC cell production process, and the quality of the coating layer directly affects the electrical performance of the cells. At present, more advanced equipment that can perform back passivation includes ALD (atomic layer deposition) equipment for microconductors and MAiA equipment for Meyer Burger. Meyer Burger's MAiA equipment has multiple process chambers connected, which can complete the rear aluminum oxide coating and silicon nitride coating, and even MAiA's 3in 1 equipment can complete the rear aluminum oxide, silicon nitride and front silicon nitride coating at one time. . The advantage of MAiA is that the coating uniformity is good, and the environmental pollution can be reduced when the aluminum oxide and silicon nitride coating on the back is completed at one time, and the operation is simple. The disadvantage is that the production capacity is slightly lower than that of ALD equipment, so the coating process is often crystalline silicon solar cells The bottleneck of production capacity and the release of the production capacity of the coating process have always been the concerns of crystalline silicon battery companies. At present, the passivation effect of MAiA equipment plating aluminum oxide on the back of PERC battery is worse than that of ALD, so the film thickness of MAiA equipment plating aluminum oxide film on the back must be more than 20nm, while ALD equipment plating aluminum oxide film thickness 5-10nm can achieve the same effect , MAiA uses the argon plasma excited by the tip discharge to excite trimethylaluminum again, and the excited mixed gas of argon and trimethylaluminum reacts with laughing gas. The mixed gas is ionized in the quartz tube conducting microwave energy, and the generated plasma The body forms a coating layer on the back surface of the crystalline silicon. In this coating method, the limitation of microwave power and the total flow rate of special gas are the main reasons for limiting the production capacity of MAiA and other plate PECVD equipment. After the manufacturer installs and debugs the MAiA coating equipment, the mass production process menu provided at the beginning is often relatively conservative. , considering the "run-in period" of the equipment, the ionization degree of the special gas and the plasma deposition rate have not been optimally matched. The patent (201711336123.2) applied by Suntech Solar Power Co., Ltd. provides a method to increase the production capacity of the tubular PECVD process, mainly to shorten the process running time from the auxiliary process after coating, and it is limited to the tubular PECVD equipment; Suzhou Art The patent (201621098512.7) applied by Sri Sunshine Power Technology Co., Ltd. improves the utilization rate of plasma by changing the direction of the magnetic field of the coating deposition tank. This method does not improve the coating on MAiA (quartz tube is above the coating cell) equipment. space, the direction of the argon plasma beam spot will change after changing the direction of the magnetic field.
目前为了保证双面PERC电池背面镀膜显示蓝色，大多数厂家采用低光程镀膜，并在低光程镀膜的同时采用低膜厚、高折射率镀膜工艺或者渐进式镀膜工艺。采用低光程镀膜工艺的时候，镀膜层钝化效果将是决定PERC电池电性能的重要一环，提高板式PECVD镀膜产能的同时不降低镀膜层钝化效果，将是目前晶硅PERC电池厂家要解决的技术难题。At present, in order to ensure that the coating on the back of double-sided PERC cells shows blue, most manufacturers use low optical path coating, and use low film thickness, high refractive index coating process or progressive coating process at the same time as low optical path coating. When the low optical path coating process is adopted, the passivation effect of the coating layer will be an important part of determining the electrical performance of the PERC battery. Improving the production capacity of the plate-type PECVD coating without reducing the passivation effect of the coating layer will be the current crystalline silicon PERC battery manufacturers. Solved technical problems.
发明内容Contents of the invention
为了克服上述技术不足，本发明提供一种提升双面PERC电池板式PECVD镀膜产能的方法，解决了现有PECVD镀膜工艺不能够不降低电池片电性能的同时提高产能的问题。In order to overcome the above-mentioned technical deficiencies, the present invention provides a method for improving the production capacity of double-sided PERC battery plate PECVD coating, which solves the problem that the existing PECVD coating process cannot improve the production capacity without reducing the electrical performance of the battery sheet.
本发明为了实现上述目的，具体采用以下技术方案：In order to achieve the above object, the present invention specifically adopts the following technical solutions:
一种提升双面PERC电池板式PECVD镀膜产能的方法，通过采用背面渐进式镀膜工艺结合对原有工艺参数的改进调整，实现提高PERC电池双面率和提升产能的目的，方法步骤均为在原有工艺上进行改进和调整，包括以下步骤：A method for improving the production capacity of double-sided PERC battery plate PECVD coating. By adopting the back progressive coating process combined with the improvement and adjustment of the original process parameters, the purpose of improving the double-sided rate of PERC battery and increasing the production capacity is achieved. The method steps are all in the original Process improvements and adjustments include the following steps:
(1)、增大电子特气总流量：在原有工艺条件下，按比例增大氩气、笑气、三甲基铝、氨气、硅烷的总流量。(1) Increase the total flow of electronic special gas: under the original process conditions, increase the total flow of argon, nitrous oxide, trimethylaluminum, ammonia, and silane in proportion.
(2)、增大微波功率：增大微波功率有两种方法，一是增大微波峰值功率，峰值功率报警上限为4400W，但微波波动较大，在3800W时就有可能波动到4400W产生设备报警，可将现有的微波功率提升到3400～3800W；二是增加微波开启时间或缩短微波关闭时间，将微波开启时间由原来的3～6ms增加到8ms，或者将微波关闭时间有原来的14～18ms减小为8～12ms，以达到增大平均功率的目的。(2) Increase the microwave power: There are two ways to increase the microwave power. One is to increase the microwave peak power. The peak power alarm limit is 4400W, but the microwave fluctuates greatly, and it may fluctuate to 4400W at 3800W to generate equipment Alarm, the existing microwave power can be increased to 3400~3800W; the second is to increase the microwave on time or shorten the microwave off time, increase the microwave on time from the original 3~6ms to 8ms, or increase the microwave off time from the original 14 ~ 18ms is reduced to 8 ~ 12ms, in order to achieve the purpose of increasing the average power.
(3)、减少进料腔预热时间：优化真空度，和预热温度，减少载板在进料腔的预热时间，使载板可以尽早的进入工艺腔进行镀膜。(3) Reduce the preheating time of the feeding chamber: optimize the vacuum degree and preheating temperature, reduce the preheating time of the carrier board in the feeding chamber, so that the carrier board can enter the process chamber for coating as soon as possible.
(4)、提高各腔室传送带带速：此过程可以提高碳纤维载板在各腔室的移动速度，带速可提升10～30cm/min，从而提升镀膜工序产能。(4) Increase the speed of the conveyor belt in each chamber: This process can increase the moving speed of the carbon fiber carrier plate in each chamber, and the belt speed can be increased by 10-30cm/min, thereby increasing the production capacity of the coating process.
进一步地，渐进式镀膜工艺是指，将背面镀膜工艺腔的两组石英管对应的喷淋系统设计成不同的流量或者改变特气管道喷淋孔的数量，且将氧化铝和氮化硅镀膜离进料口近的石英管镀膜采用高折射率工艺。Further, the progressive coating process refers to designing the spray systems corresponding to the two groups of quartz tubes in the back coating process chamber to different flow rates or changing the number of spray holes in the special gas pipeline, and coating aluminum oxide and silicon nitride The coating of the quartz tube near the feed inlet adopts a high refractive index process.
进一步地，渐进式镀膜工艺中的氧化铝膜渐进式镀膜工艺的具体参数为：保证笑气流量计MFC1的流量低于笑气流量计MFC2的流量，MFC1流量计的笑气流量设置为500～700sccm，MFC2流量计的笑气流量设置为700～1000sccm。Further, the specific parameters of the aluminum oxide film progressive coating process in the progressive coating process are: to ensure that the flow rate of the nitrous oxide flowmeter MFC1 is lower than the flow rate of the nitrous oxide flowmeter MFC2, and the nitrous oxide flow rate of the MFC1 flowmeter is set to 500~ 700sccm, the nitrous oxide flow rate of the MFC2 flowmeter is set to 700-1000sccm.
进一步地，渐进式镀膜工艺中的氮化硅膜渐进式镀膜工艺的具体参数为：氨气流量计MFC1到MFC5的流量设置为500～1400sccm；氨气流量计MFC6的流量设置为0～300sccm；氨气流量计MFC7的流量设置为100～800sccm；氨气流量计MFC8的流量设置为50～300sccm；硅烷流量计MFC1到MFC5的流量设置为150～600sccm；硅烷流量计MFC6的流量设置为0～200sccm。Further, the specific parameters of the progressive coating process of the silicon nitride film in the progressive coating process are: the flow rate of the ammonia flowmeters MFC1 to MFC5 is set to 500-1400 sccm; the flow rate of the ammonia flowmeter MFC6 is set to 0-300 sccm; The flow rate of ammonia flowmeter MFC7 is set to 100-800sccm; the flow rate of ammonia flowmeter MFC8 is set to 50-300sccm; the flow rate of silane flowmeter MFC1 to MFC5 is set to 150-600sccm; the flow rate of silane flowmeter MFC6 is set to 0- 200 sccm.
进一步地，步骤(1)增大电子特气总流量的工艺方案已经在渐进式镀膜工艺方案中实现，在后续步骤中可以继续实施和调整。Furthermore, the process scheme of increasing the total flow rate of electronic special gas in step (1) has been implemented in the progressive coating process scheme, and can be continuously implemented and adjusted in subsequent steps.
进一步地，步骤(2)增大微波功率可替换为改变微波源或改善微波导管的质量。Further, increasing the microwave power in step (2) can be replaced by changing the microwave source or improving the quality of the microwave guide.
进一步地，原有工艺参数是指是设备进厂后，供应商厂家所对应设置的原始工艺参数，原始工艺参数为：PM1工艺腔笑气流量计MFC1和MFC2都设置为600～700sccm，三甲基铝流量计设置为450～550sccm，对应的等离子源功率2100～2300W，脉冲开启时间3～5ms，脉冲关闭时间16～18ms；工艺腔压强为5×10-2mbar，工艺腔温度340～370℃，PM1工艺腔带速设置为190～200cm/min。PM2工艺腔氨气流量计MFC1到MFC5设置为600～800sccm，对应的等离子源功率3200～3500W，脉冲开启时间8～9ms，脉冲关闭时间10～11ms；硅烷流量计MFC1到MFC5设置为280～340sccm，对应的等离子源功率3200～3500W，脉冲开启时间8～9ms，脉冲关闭时间10～11ms；工艺腔温度440～470℃，工艺腔压强为5×10-2mbar；PM1工艺腔带速设置为190～200cm/min。Furthermore, the original process parameters refer to the original process parameters set by the supplier after the equipment enters the factory. The original process parameters are: PM1 process chamber laughing gas flowmeters MFC1 and MFC2 are both set to 600-700 sccm, top three The base aluminum flowmeter is set to 450-550sccm, the corresponding plasma source power is 2100-2300W, the pulse opening time is 3-5ms, and the pulse closing time is 16-18ms; the pressure of the process chamber is 5×10-2mbar, and the temperature of the process chamber is 340-370°C , PM1 process chamber belt speed is set to 190 ~ 200cm/min. The ammonia gas flowmeters MFC1 to MFC5 in the PM2 process chamber are set to 600-800sccm, the corresponding plasma source power is 3200-3500W, the pulse on time is 8-9ms, and the pulse off time is 10-11ms; the silane flowmeters MFC1 to MFC5 are set to 280-340sccm , the corresponding plasma source power is 3200~3500W, the pulse on time is 8~9ms, and the pulse off time is 10~11ms; the temperature of the process chamber is 440~470°C, and the pressure of the process chamber is 5×10-2mbar; the belt speed of the PM1 process chamber is set to 190 ~200cm/min.
本发明的工作过程为：Working process of the present invention is:
一种提升双面PERC电池板式PECVD镀膜产能的方法，所述的方法步骤均为在原有工艺上进行改进和调整，包括以下步骤：A method for increasing the production capacity of double-sided PERC battery plate type PECVD coating, the method steps are all improved and adjusted on the original process, including the following steps:
(1)、增大电子特气总流量：在原有工艺条件下，按比例增大氩气、笑气、三甲基铝、氨气、硅烷的总流量。(1) Increase the total flow of electronic special gas: under the original process conditions, increase the total flow of argon, nitrous oxide, trimethylaluminum, ammonia, and silane in proportion.
(2)、增大微波功率：增大微波功率有两种方法，一是增大微波峰值功率，峰值功率报警上限为4400W，但微波波动较大，在3800W时就有可能波动到4400W产生设备报警，可将现有的微波功率提升到3400～3800W；二是增加微波开启时间或缩短微波关闭时间，将微波开启时间由原来的3～6ms增加到8ms，或者将微波关闭时间有原来的14～18ms减小为8～12ms，以达到增大平均功率的目的。(2) Increase the microwave power: There are two ways to increase the microwave power. One is to increase the microwave peak power. The peak power alarm limit is 4400W, but the microwave fluctuates greatly, and it may fluctuate to 4400W at 3800W to generate equipment Alarm, the existing microwave power can be increased to 3400~3800W; the second is to increase the microwave on time or shorten the microwave off time, increase the microwave on time from the original 3~6ms to 8ms, or increase the microwave off time from the original 14 ~ 18ms is reduced to 8 ~ 12ms, in order to achieve the purpose of increasing the average power.
(3)、减少进料腔预热时间：优化真空度，和预热温度，减少载板在进料腔的预热时间，使载板可以尽早的进入工艺腔进行镀膜。(3) Reduce the preheating time of the feeding chamber: optimize the vacuum degree and preheating temperature, reduce the preheating time of the carrier board in the feeding chamber, so that the carrier board can enter the process chamber for coating as soon as possible.
(4)、提高各腔室传送带带速：此过程可以提高碳纤维载板在各腔室的移动速度，带速可提升10～30cm/min，从而提升镀膜工序产能。(4) Increase the speed of the conveyor belt in each chamber: This process can increase the moving speed of the carbon fiber carrier plate in each chamber, and the belt speed can be increased by 10-30cm/min, thereby increasing the production capacity of the coating process.
本发明相比现有技术，本发明具有以下有益效果：Compared with the prior art, the present invention has the following beneficial effects:
1、本发明采用的渐进式背面镀膜工艺，可以使得双面PERC电池背面镀膜采用低光程工艺时，也能够提升电池背面的减反射效果，从而提升双面PERC电池的双面率，提升总体电池转换效率。1. The progressive back coating process adopted in the present invention can improve the anti-reflection effect on the back of the battery when the back coating of the double-sided PERC battery adopts a low optical path process, thereby increasing the double-sided rate of the double-sided PERC battery and improving the overall battery conversion efficiency.
2、本发明采用的渐进式背面镀膜工艺，可以使得氧化铝和氮化硅镀膜离进料口近的石英管镀膜采用高折射率工艺，这样在降低镀膜膜厚的同时不影响底层的钝化效果，从而提升双面PERC电池的双面率，提升总体电池转换效率。2. The progressive backside coating process adopted by the present invention can make the quartz tube coating near the feed port adopt a high refractive index process, so that the passivation of the bottom layer will not be affected while reducing the coating film thickness. Effect, thereby improving the bifacial rate of double-sided PERC cells and improving the overall cell conversion efficiency.
3、本发明采用该产能提升镀膜工艺，在不降低电池转换效率的前提下，可使每台板式PECVD设备每11.5小时镀膜电池片产量提升1700片以上，可以使镀膜工序有更多的节存电池片，从而能够与前段退火工序和后段背面开槽工序达成产能匹配。3. The present invention adopts the production-capacity-increasing coating process, which can increase the output of each plate-type PECVD equipment by more than 1,700 pieces per 11.5 hours without reducing the conversion efficiency of the battery, and can save more energy in the coating process Cells, so as to achieve capacity matching with the front-end annealing process and the back-end grooving process.
4、本发明提升镀膜产能的工艺方法在双面PERC电池和常规PERC电池都可以使用，应用广泛，实用性强。4. The process method of the present invention for improving coating production capacity can be used in both double-sided PERC batteries and conventional PERC batteries, and has wide application and strong practicability.
附图说明Description of drawings
图1是本发明的工艺流程示意图；Fig. 1 is a schematic diagram of a process flow of the present invention;
图2是本发明两种实施例的电性能测试数据对比表。Fig. 2 is a comparison table of electrical performance test data of two embodiments of the present invention.
具体实施方式Detailed ways
为了本技术领域的人员更好的理解本发明，下面结合附图和以下实施例对本发明作进一步详细描述。In order for those skilled in the art to better understand the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings and the following embodiments.
实施例1：如图1和图2所示，提供一种提升双面PERC电池板式PECVD镀膜产能的方法，PM1工艺腔笑气流量计MFC1设置为550～650sccm，三甲基铝流量计设置为450～550sccm，对应的等离子源功率2100～2300W，脉冲开启时间3～5ms，脉冲关闭时间16～18ms；笑气流量计MFC2设置为700～800sccm，MFC2与MFC1的笑气流量差为150～200sccm，对应的等离子源功率2400～2600W，脉冲开启时间5～7ms，脉冲关闭时间16～18ms；工艺腔温度340～370℃，工艺腔压强为5×10-2mbar；PM1工艺腔带速设置为200～210cm/min。PM2工艺腔氨气流量计MFC1到MFC5设置为800～900sccm，硅烷流量计MFC1到MFC5设置为300～400sccm，对应的等离子源功率3700～3900W，脉冲开启时间8～9ms，脉冲关闭时间9～10ms；氨气流量计MFC6和MFC8设置为200～300sccm，氨气流量计MFC7设置为600～700sccm，硅烷流量计MFC6和MFC8设置为40～50sccm，硅烷流量计MFC7设置为100～150sccm，对应的等离子源功率3700～3900W，脉冲开启时间8～9ms，脉冲关闭时间9～10ms；工艺腔温度440～470℃，工艺腔压强为5×10-2mbar；PM2工艺腔带速设置为210～220cm/min。Embodiment 1: As shown in Figure 1 and Figure 2, a method for improving the production capacity of double-sided PERC battery plate PECVD coating is provided. The laughing gas flowmeter MFC1 in the PM1 process chamber is set to 550-650sccm, and the trimethylaluminum flowmeter is set to 450~550sccm, corresponding plasma source power 2100~2300W, pulse on time 3~5ms, pulse off time 16~18ms; laughing gas flow meter MFC2 is set to 700~800sccm, the difference between MFC2 and MFC1 laughing gas flow rate is 150~200sccm , the corresponding plasma source power is 2400~2600W, the pulse on time is 5~7ms, and the pulse off time is 16~18ms; the temperature of the process chamber is 340~370°C, and the pressure of the process chamber is 5×10-2mbar; the belt speed of the PM1 process chamber is set to 200 ~210cm/min. The ammonia flowmeters MFC1 to MFC5 in the PM2 process chamber are set to 800-900sccm, the silane flowmeters MFC1 to MFC5 are set to 300-400sccm, the corresponding plasma source power is 3700-3900W, the pulse opening time is 8-9ms, and the pulse closing time is 9-10ms ;Ammonia flowmeters MFC6 and MFC8 are set to 200-300sccm, ammonia flowmeters MFC7 are set to 600-700sccm, silane flowmeters MFC6 and MFC8 are set to 40-50sccm, silane flowmeters MFC7 are set to 100-150sccm, the corresponding plasma Source power 3700-3900W, pulse on time 8-9ms, pulse off time 9-10ms; process chamber temperature 440-470°C, process chamber pressure 5×10-2mbar; PM2 process chamber belt speed setting 210-220cm/min .
此工艺可使MAiA设备PM1工艺腔带速提升10～20cm/min，可提升PM2工艺腔带速提升10～20cm/min，可使每台MAiA设备提升产能150～300片/小时，按照每班工作11.5小时计算，每班可提升产能1725片至3100片；This process can increase the belt speed of the PM1 process chamber of MAiA equipment by 10-20cm/min, and the belt speed of PM2 process chamber by 10-20cm/min, and can increase the production capacity of each MAiA equipment by 150-300 pieces/hour. Calculated by working 11.5 hours, the production capacity can be increased from 1725 pieces to 3100 pieces per shift;
实施例2：如图1和图2所示，本实施是在实施例1的基础上进一步优化，本实施例重点阐述与实施例1相比的改进之处，相同之处不再赘述，PM1工艺腔笑气流量计MFC1设置为550～650sccm，三甲基铝流量计设置为450～550sccm，对应的等离子源功率2300～2500W，脉冲开启时间4～6ms，脉冲关闭时间16～18ms；笑气流量计MFC2设置为700～800sccm，MFC2与MFC1的笑气流量差为150～200sccm，对应的等离子源功率2400～2600W，脉冲开启时间5～7ms，脉冲关闭时间16～18ms；工艺腔温度340～370℃，工艺腔压强为5×10-2mbar；PM1工艺腔带速设置为205～210cm/min。PM2工艺腔氨气流量计MFC1和MFC2设置为550～650sccm，硅烷流量计MFC1和MFC2设置为350～450sccm，对应的等离子源功率3700～3900W，脉冲开启时间8～9ms，脉冲关闭时间9～10ms；氨气流量计MFC3、MFC4和MFC5设置为600～800sccm，硅烷流量计MFC3、MFC4和MFC5设置为250～350sccm，对应的等离子源功率3700～3900W，脉冲开启时间8～9ms，脉冲关闭时间9～10ms；氨气流量计MFC6和MFC8设置为50～100sccm，氨气流量计MFC7设置为400～500sccm，硅烷流量计MFC6和MFC8设置为40～60sccm，硅烷流量计MFC7设置为120～160sccm，对应的等离子源功率3700～3900W，脉冲开启时间8～9ms，脉冲关闭时间9～10ms；工艺腔温度440～470℃，工艺腔压强为5×10-2mbar；PM2工艺腔带速设置为210～220cm/min。Embodiment 2: As shown in Figure 1 and Figure 2, this implementation is further optimized on the basis of Embodiment 1. This embodiment focuses on the improvements compared with Embodiment 1, and the similarities will not be repeated. PM1 The laughing gas flowmeter MFC1 in the process chamber is set to 550-650sccm, the trimethylaluminum flowmeter is set to 450-550sccm, the corresponding plasma source power is 2300-2500W, the pulse opening time is 4-6ms, and the pulse closing time is 16-18ms; The flow meter MFC2 is set to 700-800sccm, the difference between the nitrous oxide flow rate of MFC2 and MFC1 is 150-200sccm, the corresponding plasma source power is 2400-2600W, the pulse opening time is 5-7ms, and the pulse closing time is 16-18ms; the temperature of the process chamber is 340～ 370°C, the pressure of the process chamber is 5×10-2mbar; the belt speed of the PM1 process chamber is set at 205-210cm/min. The ammonia flowmeters MFC1 and MFC2 in the PM2 process chamber are set to 550-650sccm, the silane flowmeters MFC1 and MFC2 are set to 350-450sccm, the corresponding plasma source power is 3700-3900W, the pulse opening time is 8-9ms, and the pulse closing time is 9-10ms ;Ammonia flowmeters MFC3, MFC4 and MFC5 are set to 600-800sccm, silane flowmeters MFC3, MFC4 and MFC5 are set to 250-350sccm, the corresponding plasma source power is 3700-3900W, the pulse on time is 8-9ms, and the pulse off time is 9 ~10ms; ammonia flowmeters MFC6 and MFC8 are set to 50-100sccm, ammonia flowmeters MFC7 are set to 400-500sccm, silane flowmeters MFC6 and MFC8 are set to 40-60sccm, silane flowmeters MFC7 are set to 120-160sccm, corresponding The plasma source power is 3700~3900W, the pulse opening time is 8~9ms, and the pulse closing time is 9~10ms; the process chamber temperature is 440~470℃, and the process chamber pressure is 5×10-2mbar; the belt speed of PM2 process chamber is set to 210~220cm /min.
此工艺可使MAiA设备PM1工艺腔带速提升10～20cm/min，可提升PM2工艺腔带速提升10～20cm/min，可使每台MAiA设备提升产能150～300片/小时，按照每班工作11.5小时计算，每班可提升产能1725片至3100片；同时由于在双面PERC背面镀氮化硅膜层采用渐进式镀膜工艺，使得双面PERC电池双面率比常规工艺有所提升。This process can increase the belt speed of the PM1 process chamber of MAiA equipment by 10-20cm/min, and the belt speed of PM2 process chamber by 10-20cm/min, and can increase the production capacity of each MAiA equipment by 150-300 pieces/hour. Calculated after 11.5 hours of work, the production capacity can be increased by 1,725 to 3,100 pieces per shift; at the same time, due to the progressive coating process used to coat the silicon nitride film on the back of the double-sided PERC, the double-sided rate of the double-sided PERC battery has improved compared with the conventional process.
实施例3：如图1和图2所示，本实施是在实施例1的基础上进一步优化，本实施例重点阐述与实施例1相比的改进之处，相同之处不再赘述，原有工艺参数是指是设备进厂后，供应商厂家所对应设置的原始工艺参数，具体工艺参数为：PM1工艺腔笑气流量计MFC1和MFC2都设置为600～700sccm，三甲基铝流量计设置为450～550sccm，对应的等离子源功率2100～2300W，脉冲开启时间3～5ms，脉冲关闭时间16～18ms；工艺腔压强为5×10-2mbar，工艺腔温度340～370℃，PM1工艺腔带速设置为190～200cm/min。PM2工艺腔氨气流量计MFC1到MFC5设置为600～800sccm，对应的等离子源功率3200～3500W，脉冲开启时间8～9ms，脉冲关闭时间10～11ms；硅烷流量计MFC1到MFC5设置为280～340sccm，对应的等离子源功率3200～3500W，脉冲开启时间8～9ms，脉冲关闭时间10～11ms；工艺腔温度440～470℃，工艺腔压强为5×10-2mbar；PM1工艺腔带速设置为190～200cm/min。Embodiment 3: As shown in Figure 1 and Figure 2, this implementation is further optimized on the basis of Embodiment 1. This embodiment focuses on the improvements compared with Embodiment 1, and the similarities will not be repeated. Process parameters refer to the original process parameters set by the supplier after the equipment enters the factory. The specific process parameters are: PM1 process chamber laughing gas flowmeter MFC1 and MFC2 are set to 600-700sccm, trimethyl aluminum flowmeter Set to 450-550sccm, corresponding plasma source power 2100-2300W, pulse on time 3-5ms, pulse off time 16-18ms; process chamber pressure 5×10-2mbar, process chamber temperature 340-370°C, PM1 process chamber The belt speed is set at 190-200cm/min. The ammonia gas flowmeters MFC1 to MFC5 in the PM2 process chamber are set to 600-800sccm, the corresponding plasma source power is 3200-3500W, the pulse on time is 8-9ms, and the pulse off time is 10-11ms; the silane flowmeters MFC1 to MFC5 are set to 280-340sccm , the corresponding plasma source power is 3200~3500W, the pulse on time is 8~9ms, and the pulse off time is 10~11ms; the temperature of the process chamber is 440~470°C, and the pressure of the process chamber is 5×10-2mbar; the belt speed of the PM1 process chamber is set to 190 ~200cm/min.
本发明的工作原理为：Working principle of the present invention is:
一种提升双面PERC电池板式PECVD镀膜产能的方法，所述的方法步骤均为在原有工艺上进行改进和调整，包括以下步骤：A method for increasing the production capacity of double-sided PERC battery plate type PECVD coating, the method steps are all improved and adjusted on the original process, including the following steps:
(1)、增大电子特气总流量：在原有工艺条件下，按比例增大氩气、笑气、三甲基铝、氨气、硅烷的总流量。(1) Increase the total flow of electronic special gas: under the original process conditions, increase the total flow of argon, nitrous oxide, trimethylaluminum, ammonia, and silane in proportion.
(2)、增大微波功率：增大微波功率有两种方法，一是增大微波峰值功率，峰值功率报警上限为4400W，但微波波动较大，在3800W时就有可能波动到4400W产生设备报警，可将现有的微波功率提升到3400～3800W；二是增加微波开启时间或缩短微波关闭时间，将微波开启时间由原来的3～6ms增加到8ms，或者将微波关闭时间有原来的14～18ms减小为8～12ms，以达到增大平均功率的目的。(2) Increase the microwave power: There are two ways to increase the microwave power. One is to increase the microwave peak power. The peak power alarm limit is 4400W, but the microwave fluctuates greatly, and it may fluctuate to 4400W at 3800W to generate equipment Alarm, the existing microwave power can be increased to 3400~3800W; the second is to increase the microwave on time or shorten the microwave off time, increase the microwave on time from the original 3~6ms to 8ms, or increase the microwave off time from the original 14 ~ 18ms is reduced to 8 ~ 12ms, in order to achieve the purpose of increasing the average power.
(3)、减少进料腔预热时间：优化真空度，和预热温度，减少载板在进料腔的预热时间，使载板可以尽早的进入工艺腔进行镀膜。(3) Reduce the preheating time of the feeding chamber: optimize the vacuum degree and preheating temperature, reduce the preheating time of the carrier board in the feeding chamber, so that the carrier board can enter the process chamber for coating as soon as possible.
(4)、提高各腔室传送带带速：此过程可以提高碳纤维载板在各腔室的移动速度，带速可提升10～30cm/min，从而提升镀膜工序产能。(4) Increase the speed of the conveyor belt in each chamber: This process can increase the moving speed of the carbon fiber carrier plate in each chamber, and the belt speed can be increased by 10-30cm/min, thereby increasing the production capacity of the coating process.
以上所述，仅为本发明的较佳实施例，并不用以限制本发明，本发明的专利保护范围以权利要求书为准，凡是运用本发明的说明书及附图内容所作的等同结构变化，同理均应包含在本发明的保护范围内。The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention. The scope of patent protection of the present invention is subject to the claims. Any equivalent structural changes made by using the description and accompanying drawings of the present invention, All should be included in the protection scope of the present invention in the same way.
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