CN108666205A - A kind of method for cleaning wafer - Google Patents
A kind of method for cleaning wafer Download PDFInfo
- Publication number
- CN108666205A CN108666205A CN201810464148.9A CN201810464148A CN108666205A CN 108666205 A CN108666205 A CN 108666205A CN 201810464148 A CN201810464148 A CN 201810464148A CN 108666205 A CN108666205 A CN 108666205A
- Authority
- CN
- China
- Prior art keywords
- wafer
- cleaning
- photoresist
- photoresist layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 37
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 11
- 238000001035 drying Methods 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- 150000003863 ammonium salts Chemical class 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 150000007524 organic acids Chemical class 0.000 claims description 3
- 239000006210 lotion Substances 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 8
- 239000012535 impurity Substances 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000007547 defect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003196 chaotropic effect Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention relates to technical field of semiconductors more particularly to a kind of method for cleaning wafer, and a wafer of metal interconnection layer and photoresist layer is formed with applied to surface；Including：Step S1, using the surface of one first cleaning solution cleaning wafer；Step S2, using the photoresist layer on photoresist stripper removal wafer；Step S3, using the surface of one second cleaning solution cleaning wafer；Step S4, using a drying process by the dry tack free of wafer；Wherein, in step S2, photoresist stripper is ST250；It can ensure that the residual that not will produce impurity element while removing the photoresist layer of crystal column surface ensure that the yield of product wafer to ensure that the reliable of back-end process.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of method for cleaning wafer.
Background technology
Flash memory is a kind of non-volatile memory of long-life, data deletion be not as unit of single byte but
As unit of fixed block, block size is generally 256KB to 20MB.Flash memory is the change of Electrical Erasable read-only memory
Kind, most of chip needs block to wipe.
In the back-end process of flash memory products, the photoresist layer for carrying out photoetching is needed to form when forming metal interconnection layer, it is complete
The photoresist layer of crystal column surface is removed at generally requiring later.Light is often removed using specific photoresist stripper in the prior art
Resistance layer, for example, the photoresist stripper that ST250 may be used removes removing photoresistance layer, can be by regular under specific dosage
It replaces photoresist stripper and realizes large batch of wafer-process.
However, going removing photoresistance layer to be easy to form impurity or residual in crystal column surface only with specific photoresist stripper
The defects of staying, being easy to form wafer stripping in subsequent processing procedure, severely impacts the yield of product wafer.
Invention content
In view of the above-mentioned problems, the present invention proposes a kind of method for cleaning wafer, metal interconnection layer is formed with applied to surface
An and wafer of photoresist layer；Wherein, including：
Step S1 cleans the surface of the wafer using one first cleaning solution；
Step S2 removes the photoresist layer on the wafer using a photoresist stripper；
Step S3 cleans the surface of the wafer using one second cleaning solution；
Step S4, using a drying process by the dry tack free of the wafer；
Wherein, in the step S2, the photoresist stripper is ST250.
Above-mentioned method for cleaning wafer, wherein in the step S1, use the time of the first cleaning solution cleaning for 5
~25s.
Above-mentioned method for cleaning wafer, wherein further include between the step S2 and S3：
Intermediate steps are dried the wafer using a single-wafer cleaning machine.
Above-mentioned method for cleaning wafer, wherein in the step S1, first cleaning solution is formed using plasma water.
Above-mentioned method for cleaning wafer, wherein in the step S2, the photoresist is formed using ammonium salt, organic acid and water
Stripper.
Above-mentioned method for cleaning wafer, wherein in the step S3, second cleaning solution is formed using plasma water.
Above-mentioned method for cleaning wafer, wherein in the step S4, the drying process is carried out using inert gas.
Above-mentioned method for cleaning wafer, wherein the inert gas is nitrogen.
Above-mentioned method for cleaning wafer, wherein the photoresist layer is formed in the upper surface of the metal interconnection layer.
Advantageous effect：A kind of method for cleaning wafer proposed by the present invention can ensure the photoresist layer for removing crystal column surface
The residual that not will produce impurity element simultaneously ensure that the yield of product wafer to ensure that the reliable of back-end process.
Description of the drawings
Fig. 1 is the step flow chart of method for cleaning wafer in one embodiment of the invention；
Fig. 2 and Fig. 3 is the distribution map for the defect that method for cleaning wafer generates in the prior art.
Specific implementation mode
Invention is further explained with reference to the accompanying drawings and examples.
In a preferred embodiment, as shown in Figure 1, it is proposed that a kind of method for cleaning wafer is formed applied to surface
There is a wafer of metal interconnection layer and photoresist layer；Wherein it is possible to include：
Step S1, using the surface of one first cleaning solution cleaning wafer；
Step S2, using the photoresist layer on photoresist stripper removal wafer；
Step S3, using the surface of one second cleaning solution cleaning wafer；
Step S4, using a drying process by the dry tack free of wafer；
Wherein, in step S2, photoresist stripper is ST250.
Can also include being used to form other conventional structures of flash memory, for example substrate, dodge in above-mentioned technical proposal, in wafer
Memory cell, isolation structure, contact hole etc.；And the crystal column surface in the present invention is already formed with metal interconnection layer and photoresist layer, this
When need removing photoresistance layer to being exposed the upper surface of metal interconnection layer；Method for cleaning wafer not using the present invention,
It is easy to form defect in wafer, distribution situation of the defect in wafer can be as shown in Figures 2 and 3；Using in the present invention
Method for cleaning wafer can ensure that crystal column surface does not have the residual of the impurity elements such as carbon, to ensure that follow-up process
It is smoothed out, improves product yield；The selection of photoresist layer should keep corresponding with the selection of photoresist stripper.
In a preferred embodiment, in step S1, the time that the first cleaning solution cleans is used to be lifted for 5~25s (second)
Can be 8s or 10s or 12s or 15s or 18s or 20s or 22s etc. for example.
In a preferred embodiment, further include between step S2 and S3：
Intermediate steps are dried wafer using a single-wafer cleaning machine.
In above-mentioned technical proposal, there may be useful for driving the whirler of wafer rotation in single-wafer cleaning machine
Structure allows rotating mechanism idle running that can conveniently realize the drying of wafer at this time.
In a preferred embodiment, in step S1, the first cleaning solution is formed using plasma water.
In a preferred embodiment, in step S2, ammonium salt, organic acid and water may be used and form ST250.
In a preferred embodiment, in step S3, plasma water may be used and form the second cleaning solution.
In a preferred embodiment, in step S4, inert gas may be used, technique is dried, avoid oxidisability
Or the gas of reproducibility generates chemical reaction with crystal column surface and forms new impurity.
In above-described embodiment, it is preferable that inert gas can be nitrogen, in the other cases, can also be according to specific
Situation selects other kinds of medium to complete drying.
In a preferred embodiment, photoresist layer should be formed in the upper surface of the metal interconnection layer.
In conclusion a kind of method for cleaning wafer proposed by the present invention, applied to surface be formed with metal interconnection layer and
One wafer of photoresist layer；Including：Step S1, using the surface of one first cleaning solution cleaning wafer；Step S2 is shelled using a photoresist
Chaotropic removes the photoresist layer on wafer；Step S3, using the surface of one second cleaning solution cleaning wafer；Step S4, it is dry using one
Drying process is by the dry tack free of wafer；It can ensure not will produce the residual of impurity element while removing the photoresist layer of crystal column surface
It stays, to ensure that the reliable of back-end process, ensure that the yield of product wafer.
By description and accompanying drawings, the exemplary embodiments of the specific structure of specific implementation mode are given, based on present invention essence
God can also make other conversions.Although foregoing invention proposes existing preferred embodiment, however, these contents are not intended as
Limitation.
For a person skilled in the art, after reading above description, various changes and modifications undoubtedly will be evident.
Therefore, appended claims should regard the whole variations and modifications for covering the true intention and range of the present invention as.It is weighing
The range and content of any and all equivalences within the scope of sharp claim, are all considered as still belonging to the intent and scope of the invention.
Claims (9)
1. a kind of method for cleaning wafer is formed with a wafer of metal interconnection layer and photoresist layer applied to surface；Its feature exists
In, including：
Step S1 cleans the surface of the wafer using one first cleaning solution；
Step S2 removes the photoresist layer on the wafer using a photoresist stripper；
Step S3 cleans the surface of the wafer using one second cleaning solution；
Step S4, using a drying process by the dry tack free of the wafer；
Wherein, in the step S2, the photoresist stripper is ST250.
2. method for cleaning wafer according to claim 1, which is characterized in that clear using described first in the step S1
The time of washing lotion cleaning is 5~25s.
3. method for cleaning wafer according to claim 1, which is characterized in that further include between the step S2 and S3：
Intermediate steps are dried the wafer using a single-wafer cleaning machine.
4. method for cleaning wafer according to claim 1, which is characterized in that in the step S1, using plasma water shape
At first cleaning solution.
5. method for cleaning wafer according to claim 1, which is characterized in that in the step S2, using ammonium salt, organic acid
The ST250 is formed with water.
6. method for cleaning wafer according to claim 1, which is characterized in that in the step S3, using plasma water shape
At second cleaning solution.
7. method for cleaning wafer according to claim 1, which is characterized in that in the step S4, using inert gas into
The row drying process.
8. method for cleaning wafer according to claim 7, which is characterized in that the inert gas is nitrogen.
9. method for cleaning wafer according to claim 1, which is characterized in that the photoresist layer is formed in the metal interconnection
The upper surface of layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810464148.9A CN108666205A (en) | 2018-05-15 | 2018-05-15 | A kind of method for cleaning wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810464148.9A CN108666205A (en) | 2018-05-15 | 2018-05-15 | A kind of method for cleaning wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108666205A true CN108666205A (en) | 2018-10-16 |
Family
ID=63778572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810464148.9A Pending CN108666205A (en) | 2018-05-15 | 2018-05-15 | A kind of method for cleaning wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108666205A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112320753A (en) * | 2020-10-29 | 2021-02-05 | 武汉高芯科技有限公司 | A kind of MEMS wafer cleaning method |
Citations (4)
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|---|---|---|---|---|
| CN1527364A (en) * | 2003-04-29 | 2004-09-08 | ̨������·����ɷ�����˾ | Method and device for cleaning wafer |
| US20060003593A1 (en) * | 2004-06-30 | 2006-01-05 | Innolux Display Corp. | Method and apparatus for stripping photo-resist |
| US20080053489A1 (en) * | 2006-09-06 | 2008-03-06 | Tokyo Electron Limited | Substrate cleaning method |
| CN104460751A (en) * | 2014-12-31 | 2015-03-25 | 北京七星华创电子股份有限公司 | Chemical liquid temperature control device applied to chemical liquid feeding system |
-
2018
- 2018-05-15 CN CN201810464148.9A patent/CN108666205A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1527364A (en) * | 2003-04-29 | 2004-09-08 | ̨������·����ɷ�����˾ | Method and device for cleaning wafer |
| US20040216770A1 (en) * | 2003-04-29 | 2004-11-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Process for rinsing and drying substrates |
| US20060003593A1 (en) * | 2004-06-30 | 2006-01-05 | Innolux Display Corp. | Method and apparatus for stripping photo-resist |
| US20080053489A1 (en) * | 2006-09-06 | 2008-03-06 | Tokyo Electron Limited | Substrate cleaning method |
| CN104460751A (en) * | 2014-12-31 | 2015-03-25 | 北京七星华创电子股份有限公司 | Chemical liquid temperature control device applied to chemical liquid feeding system |
Non-Patent Citations (1)
| Title |
|---|
| 刘振东，李成波: "《光伏技术理论与应用》", 30 April 2016 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112320753A (en) * | 2020-10-29 | 2021-02-05 | 武汉高芯科技有限公司 | A kind of MEMS wafer cleaning method |
| CN112320753B (en) * | 2020-10-29 | 2024-04-26 | 武汉高芯科技有限公司 | MEMS wafer cleaning method |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181016 |
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| RJ01 | Rejection of invention patent application after publication |