CN108565246A - Thin film transistor base plate and preparation method thereof, dot structure, display device - Google Patents

Abstract

The invention provides a thin film transistor substrate and its manufacturing method, a pixel structure, and a display device. The manufacturing method of the thin film transistor substrate includes: using a material containing a metal target to form a transition layer on the substrate; Oxygen is fed into the transition layer to oxidize the metal target to form a light-absorbing layer; a source-drain metal conductive layer is formed on the light-absorbing layer; The light absorbing layer and the source and drain metal conductive layers are removed together. The present invention makes a light-absorbing layer in the non-transparent area of the base substrate to reduce the light reflection of the base substrate in the non-transparent area, thereby reducing the specular reflection of the TFT substrate surface to ambient light; at the same time, the metal oxide film layer also It can be used as a light-shielding layer to shield positions that do not need light transmission, reduce the generation of photogenerated carriers in the active layer, and improve the characteristics of TFT substrates; it is especially suitable for making display components or display devices with narrow borders and/or curved surfaces.

Description

Thin film transistor substrate and manufacturing method thereof, pixel structure, display device

technical field

The invention relates to display technology, in particular to a thin film transistor substrate, a manufacturing method thereof, a pixel structure, and a display device.

Background technique

The solution of the existing four-sided narrow border or even borderless display panel is to place the thin film transistor substrate (ThinFilm Transistor, TFT substrate for short) on the viewing side, and the color filter substrate (Color Filter, CF substrate for short) on the backlight side, which can greatly The bonding frame of the printed circuit board (PCB for short) is greatly narrowed. However, the metal electrode lines of the array substrate (Array) reflect light, especially when the external light is strong, the specular reflection formed on the outer surface of the TFT substrate is relatively serious, which interferes with the outgoing light of the display panel (Panel), thus affecting the display. The screen display of the panel. For the reflective phenomenon of this metal electrode line, the current solution is generally to add one or even several mask plates (mask) to prepare other layers that block the reflection; The problem of alignment and defect rate between masks will affect the aperture ratio and yield rate of the display panel, and adding a new layer will increase the step difference of the TFT substrate and increase the embedding of the thin film transistor substrate and the color filter substrate. The difficulty of crafting (Cell crafting).

At present, there is a black matrix (Black Matrix, BM for short) that uses organic materials to reduce the specular reflection phenomenon on the outer surface of the TFT substrate, but printing this BM requires a separate mask, because the alignment between the mask and other layers Therefore, it has a certain impact on the aperture ratio of the display panel; especially, if the alignment deviation of the BM is too large, not only the metal electrode lines cannot be completely covered, but also the metal electrode lines will be degraded and the leakage current will increase.

Contents of the invention

The purpose of the present invention is to solve at least one of the above-mentioned technical defects, especially to solve the problem of specular reflection on the outer surface of the TFT substrate.

The present invention proposes a manufacturing method of a thin film transistor substrate, comprising:

forming a transition layer on the base substrate by using a material containing a metal target;

Oxygen is introduced during the process of forming the transition layer, so that the metal target is oxidized to form a light-absorbing layer capable of absorbing light;

forming a source-drain metal conductive layer on the light absorbing layer;

Through an etching process, the light absorbing layer and the source-drain metal conductive layer in the preset light-transmitting region are removed together.

Preferably, the metal target includes one of molybdenum, molybdenum alloy, titanium, titanium alloy or molybdenum-titanium alloy.

Preferably, a transition layer is formed on the base substrate by a sputtering process; during deposition, an inert gas is introduced at a rate of 500 sccm-700 sccm.

Further, the rate of introducing oxygen is 600sccm-800sccm, and the thickness of the light-absorbing layer is The light absorbing layer includes metal oxide.

Preferably, nitrogen gas is also fed into the oxygen gas at the same time, so as to form a light-absorbing layer including metal oxynitride.

Preferably, the step of removing the light-absorbing layer and the source-drain metal conductive layer in the preset light-transmitting region together through an etching process includes:

Coating photoresist on the source-drain metal conductive layer;

Exposing the predetermined light-transmitting area to remove the photoresist in the predetermined light-transmitting area;

The first etching treatment is performed on the exposed substrate structure to remove the light absorbing layer and the source-drain metal conductive layer in the preset light-transmitting region.

Further, it also includes: performing half-exposure processing on the preset source-drain interval region while performing exposure processing on the preset light-transmitting region;

After the first etching process is performed on the exposed substrate structure, ashing treatment is performed on the predetermined source-drain spacer region to remove the photoresist in the predetermined source-drain spacer region;

The ashing-processed substrate structure is subjected to a second etching process to remove the source-drain metal conductive layer in the preset source-drain interval region.

The present invention also provides a thin film transistor substrate, which is manufactured by any one of the manufacturing methods described above.

The present invention also proposes a pixel structure, which includes the thin film transistor substrate.

The present invention also proposes a display device, which includes the thin film transistor substrate.

The beneficial effects of the present invention are as follows:

1. The production method of the thin film transistor substrate of the present invention is based on the process of making the transition layer by introducing oxygen to form a light-absorbing light-absorbing layer; the light-absorbing layer can reduce the adverse effects of specular reflection in the non-light-transmitting area of the thin-film transistor substrate, and also The electrode lines on the inside of the thin film transistor substrate can be blocked, so the electrode lines can be arranged on the inside of the thin film transistor substrate to make a display panel with a narrow frame or a curved display panel; a source-drain metal conductive layer can also be formed on the light-absorbing layer, and Through the same etching process, the light-absorbing layer and the source-drain metal conductive layer in the preset light-transmitting region are removed simultaneously, without increasing the complexity of the existing process.

2. Compared with the existing process of printing black matrix separately, the manufacturing method of the thin film transistor substrate of the present invention reduces the process steps such as making BM mask plate, BM printing and etching; at the same time, it also avoids making BM layer separately Printing errors and alignment offsets.

3. The thin-film transistor substrate of the present invention forms a light-absorbing layer capable of absorbing light by improving the structure of the transition layer, which can not only reduce the adverse effects of the specular reflection and block the inner electrode lines, but also reduce the light generation of the active layer of the top-gate transistor. Carriers are generated, leakage current is reduced, and the characteristics of the TFT substrate are improved; and the present invention does not add a new layer, which has little effect on the overall thickness of the thin film transistor substrate, and has little impact on the subsequent manufacturing process of the thin film transistor substrate and the embedding process with the color filter substrate. The impact is also small.

Additional aspects and advantages of the invention will be set forth in part in the description which follows, and will become apparent from the description, or may be learned by practice of the invention.

Description of drawings

The above and/or additional aspects and advantages of the present invention will become apparent and easy to understand from the following description of the embodiments in conjunction with the accompanying drawings, wherein:

Fig. 1 is the schematic flow chart of the manufacturing method embodiment of light-absorbing layer in the manufacturing method of the present invention;

2 is a schematic flow diagram of an embodiment of removing the light absorbing layer and the source-drain metal conductive layer in the preset light-transmitting region in the manufacturing method of the present invention;

Fig. 3 is the schematic flow chart of the preferred embodiment of the second etching treatment in the manufacturing method of the present invention;

4 is a schematic structural view of a preferred embodiment of a thin film transistor substrate of the present invention;

FIG. 5 is a schematic structural diagram of a preferred embodiment of the pixel structure of the present invention.

Label description:

Base substrate 1, light absorbing layer 21, pixel electrode 22, source and drain metal conductive layer 31, active layer 32, gate layer 33, passivation layer 34, common electrode 35, liquid crystal layer 4, color filter layer 5, backlight Layer 6, backlight plate 61, light guide layer 62.

Detailed ways

Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

Those skilled in the art will understand that unless otherwise stated, the singular forms "a", "an", "said" and "the" used herein may also include plural forms. It should be further understood that the word "comprising" used in the description of the present invention refers to the presence of said features, integers, steps, operations, elements and/or components, but does not exclude the presence or addition of one or more other features, Integers, steps, operations, elements, components, and/or groups thereof. It will be understood that when an element is referred to as being "deposited" on another element, it can be directly deposited on the other element, or intervening elements may also be present. The expression "and/or" used herein includes all or any elements and all combinations of one or more associated listed items.

Those skilled in the art can understand that, unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which this invention belongs. It should also be understood that terms, such as those defined in commonly used dictionaries, should be understood to have meanings consistent with their meaning in the context of the prior art, and unless specifically defined as herein, are not intended to be idealized or overly Formal meaning to explain.

The present invention proposes an embodiment of a manufacturing method of a thin film transistor substrate, as shown in FIG. 1 , comprising the following steps:

Step S10: using a material containing a metal target to form a transition layer on the base substrate;

As shown in FIG. 4 , a transition layer (or buffer layer) is deposited on the base substrate 1 of some existing substrates, and then transistor components are fabricated on the transition layer. The deposition method can be a plasma-enhanced chemical vapor deposition (PECVD) process, a sputtering process, etc., which are used to improve the flatness of the substrate, or to reduce the contact resistance of the source electrode or the drain electrode, or to prevent An increase in transistor cut-off current or a negative shift in threshold voltage, etc. In the present invention, the transition layer may include components such as molybdenum, titanium or alloys thereof, and the transition layer may be formed by evaporation, sputtering or a combination of various deposition processes.

Step S20: introducing oxygen into the process of forming the transition layer, so as to oxidize the metal target to form a light-absorbing layer capable of absorbing light;

When oxygen is introduced during the deposition process, the oxygen will combine with the sputtered metal target particles to form a metal oxide film layer with a mixed and rough structure such as metal monomers, metal oxides, and uncertain defect states, which is the light-absorbing layer in Figure 4. twenty one. When ambient light is incident on the metal oxide film layer, the opaque metal monomers and uncertain defect states will absorb part of the visible light, and the metal oxide is relatively dispersed during the deposition process, so that the unabsorbed visible light is scattered to different direction, avoiding or reducing the reflection of ambient light by the transition layer including the light absorbing layer. By adjusting parameters such as oxygen partial pressure and deposition power, the structure and characteristics of the film obtained by the deposition process can be adjusted to form a light-absorbing, low-reflection metal oxide film layer; the metal oxide film layer can also play the role of a black matrix, which can protect the TFT The electrode wires inside the substrate are effectively shielded so that the wires can be routed inside the TFT substrate to make a display panel with a narrow frame or a curved frame.

Step S30: forming a source-drain metal conductive layer on the light absorbing layer;

As shown in FIG. 4, after the light-absorbing layer 21 is formed, transistor components can be fabricated on the light-absorbing layer 21; the light-absorbing layer 21 in the preset light-transmitting region can also be removed through an etching process to obtain the light-absorbing layer 21 with a preset pattern. A transistor component is then fabricated on the light absorbing layer 21 with a predetermined pattern. The transistor component may include a bottom-gate transistor, or a top-gate transistor, or a combination of both. To simplify the manufacturing process of the TFT substrate, the transistor components are preferably top-gate transistors. Referring to the embodiment structure shown in FIG. 4 , the source-drain metal conductive layer 31 of the top-gate transistor is deposited on the light absorbing layer 21 . This structure can directly deposit the source-drain metal conductive layer 31 on the unetched light-absorbing layer 21, so that the source-drain metal conductive layer 31 and the source-drain metal conductive layer 31 and The light absorbing layer 21 achieves the purpose of simplifying the manufacturing process. Therefore, the embodiment of the present invention also includes the following steps:

Step S40 : remove the light absorbing layer and the source-drain metal conductive layer in the preset light-transmitting region together through an etching process.

As shown in FIG. 5 , the base substrate 1 includes a preset light-transmitting area and an opaque area, the light-transmitting area is the area corresponding to the pixel electrode 22, and the light-impermeable area is the area other than the area corresponding to the pixel electrode 22. . When the backlight emits from the backlight layer 6 , it penetrates the preset light-transmitting area of the pixel electrode 22 and the base substrate 1 and emits outward, and the light emitting direction is shown by arrow A in FIG. 5 . The area between the plurality of pixel electrodes 22 corresponds to the non-transparent area of the base substrate 1 , and the inner side of the non-transparent area is generally provided with transistor components and metal electrode lines to provide the working voltage and current of the pixel electrodes 22 . Since the base substrate 1 is a transparent panel, so that the backlight can be emitted outwards, part of the ambient light can also pass through the base substrate 1 and be reflected on the film layer and the metal electrode line inside the base substrate 1; When the ambient light is strong, this reflection phenomenon will interfere with the display of the pixel electrode 22, so it is necessary to avoid or reduce the reflection effect of the transistor components and metal electrode lines in the non-light-transmitting area on the ambient light.

After passing through step S20, the formed light-absorbing layer 21 will cover the preset light-transmitting area and the light-impermeable area inside the base substrate 1, which will cause the preset light-transmitting area to fail to display normally, so the preset light-transmitting area needs to be The light absorbing layer 21 in the area is removed. In the present invention, through the etching process in step S40, the light-absorbing layer 21 and the source-drain metal conductive layer 31 in the preset light-transmitting region are simultaneously removed, and the light-absorbing layer 21 in the non-light-transmitting region is retained, that is, a light-absorbing layer with a preset pattern is obtained. twenty one. This step avoids the step of separately etching the light-absorbing layer 21 and the source-drain metal conductive layer 31 in the light-transmitting region, which simplifies the etching process; at the same time, the light-absorbing layer 21 can also reduce the leakage current of the top-gate transistor, reducing The generation of photo-generated carriers improves the characteristics of the TFT substrate; compared with the multiple etching process, it also avoids the problem of precise alignment of the patterns of each layer in the etching process, and improves the aperture ratio of the display panel.

The light-absorbing layer 21 produced by the manufacturing method of the present invention can reduce the influence of the reflection of the transistor components and metal electrode lines in the non-light-transmitting area on the ambient light, thereby reducing the specular reflection of the thin-film transistor substrate on the ambient light, so that the thin-film transistor substrate faces outwards. The viewing effect of the display panel or display device is better; at the same time, the present invention can form a light-absorbing layer 21 with good light-absorbing effect and low reflection only by introducing oxygen and adjusting deposition parameters while making the transition layer, and then through the etching process The source-drain metal conductive layer and the light-absorbing layer 21 of the top-gate transistor can be etched at the same time, which simplifies the manufacturing process, and does not need to make a black matrix mask separately, and also avoids the problems caused by the separate printing of the black matrix and the alignment accuracy. error; the process improvement cost of the present invention is low, the product yield rate is high, and the influence on product characteristics is small.

As shown in FIG. 4, the thin film transistor substrate further includes a passivation layer 34, a gate layer 33, an active layer 32, a source-drain metal conductive layer 31, and a common electrode 35 along the light emitting direction; the gate layer 33 is connected to the common electrode 35 through the via hole on the passivation layer 34 ; the source and drain metal conductive layer 31 is deposited on the light absorbing layer 21 . The light-absorbing layer 21 and the source-drain metal conductive layer 31 can be fabricated by the aforementioned etching process, and the rest of the layers can be produced by the process flow, which will not be repeated here.

The light-absorbing layer 21 can be selected from Cr, Mo, Ti and other metals that are firmly bonded to the base substrate 1. Considering the wavelength range of the visible light to be absorbed and the extinction coefficient of the metal in this wavelength range, molybdenum can be used. Or molybdenum alloy, titanium or titanium alloy, or molybdenum-titanium alloy to make the light-absorbing layer 21; and metal Mo, Ti itself is a common material for making a transistor structure, and its manufacturing process is a prior art, which will not make the entire display panel Job costs have risen sharply. Therefore, the manufacturing method of the present invention also proposes another embodiment: the metal target includes one of molybdenum, molybdenum alloy, titanium, titanium alloy or molybdenum-titanium alloy.

The sputtering process can form a thin film with a uniform and dense structure, and the bonding force with the substrate 1 is higher; when oxygen is introduced, the sputtering process is easier to achieve the deposition of the compound film, and the phase composition, gradient, and Film thickness can be precisely controlled. Therefore the present invention also proposes the following embodiment that adopts sputtering process to deposit:

A transition layer is formed on the base substrate 1 by a sputtering process; during deposition, an inert gas is introduced at a rate of 500 sccm-700 sccm.

During the sputtering process, an inert gas, such as Ar, is generally introduced to form high-energy particles to bombard the metal target, so that the metal target sputters target atoms and deposits them on the substrate 1 . The preferred magnetron sputtering process of the present invention can effectively control the bombardment of high-energy particles on the metal target through the magnetic field, improve the gas ionization rate of the metal target, and accelerate the deposition rate; moreover, the inert gas is introduced during the sputtering process, The ions of the inert gas can make the surface of the film deposited by sputtering rough, and increase the uncertain defect state inside the film, so as to further increase the roughness of the metal oxide film layer, and make the light absorption and low reflection effect of the metal oxide film layer better. it is good. Ne, Xe, etc. can also be used as the inert gas.

Controlling the feed rate of the inert gas and the feed rate of oxygen can improve the properties of the metal oxide film layer. Based on the embodiment of introducing an inert gas at a rate of 500sccm-700sccm, the present invention also proposes another embodiment of a thin film transistor substrate manufacturing method: the rate of introducing oxygen is 600sccm-800sccm, and the light-absorbing layer 21 Thickness is The light absorbing layer 21 includes metal oxide.

Below take metal Mo as metal target material, and Ar is an example of inert gas, illustrate the specific preparation method of metal oxide film layer among the present invention:

Using 3N5 (that is, the purity is 99.95%) or other pure metal Mo as the target material, oxygen is introduced into the sputtering chamber, and 500sccm-700sccm (Standard CubicCentimeter per Minute, sccm, standard milliliters per minute) of Ar gas and 600sccm-800sccm of oxygen, the film formation rate can be controlled at Between, forming a thickness of metal oxide film layer. More preferably, the rate of feeding oxygen is 700 sccm, the rate of feeding inert gas is 600 sccm, forming a thickness of The metal Mo and its oxide film are used as the metal oxide film layer; Mo and MoO ₃ are mixed and coexisted, and there are many uncertain defect states in the film. Among them, the opaque Mo phase can absorb most of the visible light, and the dispersed distribution of MoO ₃ particles can scatter the unabsorbed visible light in different directions, so that no mirror reflection will occur on the outward side of the prepared TFT substrate.

For different magnetron sputtering equipment, by controlling the film forming power, oxygen partial pressure and other parameters, the film forming rate and structure can be controlled to form metal Mo and Mo oxide composite films with high visible light absorption rate, or Titanium and titanium oxide composite film, or molybdenum-titanium alloy and its oxide composite film. When manufacturing the metal oxide film layer, a small amount of nitrogen gas can also be introduced to form the light-absorbing layer 21 of metal oxynitride, which can further reduce the reflectivity of the light-absorbing layer 21 . Therefore the present invention proposes another embodiment again:

At the same time as the oxygen gas is introduced, nitrogen gas is also introduced to form the light absorbing layer 21 including metal oxynitride. Taking magnetron sputtering as an example, the inert gas is used as the working gas to bombard the Mo metal target and does not react with oxygen or nitrogen; oxygen and nitrogen are the reactive gases that react with metal Mo to form molybdenum nitride and/or Or a molybdenum oxide mixed film layer to further reduce the reflectivity of the light absorbing layer 21 . When the feeding rate of oxygen is 600 sccm-800 sccm, the rate of feeding ammonia gas may be 10 sccm-300 sccm.

Based on the structure of the above-mentioned thin film transistor substrate including top-gate transistors, the present invention further proposes a specific embodiment of an etching process, as shown in FIG. 2:

The step of removing the light-absorbing layer and the source-drain metal conductive layer in the preset light-transmitting region together through an etching process includes:

Step S41: coating photoresist on the source-drain metal conductive layer;

Step S42: Exposing the preset light-transmitting area to remove the photoresist in the preset light-transmitting area;

Step S43: performing a first etching process on the exposed substrate structure, so as to remove the light absorbing layer and the source-drain metal conductive layer in the preset light-transmitting region.

After the first etching process, the source-drain metal conductive layer 31 and the light-absorbing layer 21 in the non-light-transmitting region are retained, and the source-drain metal conductive layer 31 and the light-absorbing layer 21 in the light-transmitting region are etched away together, so that The backlight is emitted from the light-transmissive area. The light-absorbing layer 21 in the non-light-transmitting area can avoid specular reflection of ambient light in the non-light-transmitting area, and can also shield the internal structure of the non-light-transmitting area, reduce photogenerated carriers of the top-gate transistor, and reduce leakage current.

After forming the pattern of the light-absorbing layer 21 , the pattern of the source-drain metal conductive layer 31 is consistent with the pattern of the light-absorbing layer 21 , and the source-drain metal conductive layer 31 can be further etched to form the final pattern of the source-drain metal conductive layer 31 . In order to simplify the steps of applying photoresist and etching, in step S42, half-expose the region outside the source-drain metal conductive layer 31 region and within the non-transparent region of the preset final pattern, and etch away the half-exposed region. The source-drain metal conductive layer 31 of the final pattern can be obtained by exposing the source-drain metal conductive layer 31 in the region. On the basis of the specific embodiment shown in Figure 2, the present invention also proposes the following embodiments:

Performing half-exposure processing on the preset source-drain interval region while exposing the preset light-transmitting region;

After the first etching process is performed on the exposed substrate structure, ashing treatment is performed on the predetermined source-drain spacer region to remove the photoresist in the predetermined source-drain spacer region;

The ashing-processed substrate structure is subjected to a second etching process to remove the source-drain metal conductive layer in the preset source-drain interval region.

The complete steps are shown in Figure 3:

Step S41: coating photoresist on the source-drain metal conductive layer;

Step S42': Exposing the preset light-transmitting area to remove the photoresist in the preset light-transmitting area; at the same time, performing half-exposure processing on the preset source-drain separation area;

Step S43: performing a first etching process on the exposed substrate structure, so as to remove the light absorbing layer and the source-drain metal conductive layer in the preset light-transmitting region;

Step S44: Perform ashing treatment on the preset source-drain gap region to remove the photoresist in the preset source-drain gap region;

Step S45: performing a second etching process on the ashed substrate structure, so as to remove the source-drain metal conductive layer in the preset source-drain interval region.

During the exposure step, the amount of light transmission in the half-exposed area can be controlled to adjust the thickness of the photoresist film layer in the half-exposed area, so as to subsequently etch the source-drain metal conductive layer 31 with a preset final pattern. When etching away the source-drain metal conductive layer 31 and the light-absorbing layer 21 in the light-transmitting area, since there is still photoresist in the half-exposed area, the preset source-drain interval area is not etched away; The exposed area is ashed to etch the source-drain metal conductive layer 31 in the half-exposed area to obtain the source-drain metal conductive layer 31 with the source and drain separated. In this embodiment, the light-absorbing layer 21 of the preset pattern and the source-drain metal conductive layer 31 of the preset final pattern can be respectively etched through one step of coating photoresist and exposure, which avoids the printing of black matrix strips in the prior art. In order to reduce the complicated process of printing the black matrix separately and reduce the production cost of the thin film transistor substrate; and the light absorbing layer 21 is arranged on the base substrate 1 of the thin film transistor, which can block the The electrode wires on the inner side of the base substrate 1 do not need to place the electrode wires on the frame around the display panel, and the present invention is more conducive to making a display panel with a narrow frame or a curved surface.

According to the above manufacturing method, the present invention also proposes a thin film transistor substrate, the structure of a preferred embodiment shown in FIG. 4 : the thin film transistor substrate is manufactured by any one of the manufacturing methods described above. The active layer 32 , gate layer 33 , passivation layer 34 and other components are sequentially provided on the source-drain metal conductive layer 31 of the thin film transistor substrate, which adopts the existing structure and will not be described in detail here.

Since the light-absorbing layer 21 is etched out of the metal oxide film layer, which includes a mixture of metal monomers and metal oxides, there are still many uncertain defect states, making the surface of the light-absorbing layer 21 relatively rough; when ambient light When passing through the base substrate 1 to the light-absorbing layer 21, the metal monomers and defect states in the light-absorbing layer 21 absorb the visible light in the ambient light. Although the metal oxide particles reflect the ambient light, due to the metal oxidation The particles are scattered and distributed, and the visible light that is not absorbed is reflected to different directions, without the effect of specular reflection, so that the ambient light will not affect the normal viewing of the display panel. In the present invention, by setting a low-reflection light-absorbing layer 21 between the base substrate 1 and the metal oxide film layer 31, the influence of the thin-film transistor substrate on the specular reflection of ambient light is reduced, and the display quality of the display panel is improved; moreover, the present invention The light-absorbing layer 21 can block the electrode lines arranged on the inner side of the base substrate 1, so the electrode lines can be directly printed on the non-light-transmitting area of the thin film transistor without being printed in the frame of the display panel, which can make the frame of the existing display panel Narrower, or to realize the borderless display panel, is also conducive to the production of curved display panels.

The light-absorbing layer 21 can be selected from metals such as Cr, Mo, Ti, etc. that are firmly bonded to the base substrate 1. Considering the wavelength range of the visible light to be absorbed and the extinction coefficient of the metal in this wavelength range, the metal can be used. Mo or Mo alloys, titanium or titanium alloys, or molybdenum-titanium alloys are used as metal targets to make the light-absorbing layer 21; The cost of improving the process of the entire display panel has risen sharply. Therefore, another embodiment of the TFT substrate of the present invention is provided: the light absorbing layer 21 is a metal oxide film or a metal oxynitride film formed of metal Mo or an alloy of Mo. Can preferably adopt magnetron sputtering equipment to prepare the oxide film of molybdenum, to form thickness The mixed coexistence of Mo and MoO ₃ , and the light-absorbing layer 21 formed by undefined defect states.

According to the embodiment of the thin film transistor substrate, the present invention also proposes a pixel structure, which includes the thin film transistor substrate and has the low specular reflection characteristics of the aforementioned thin film transistor substrate.

As shown in the preferred embodiment of the pixel structure in FIG. 5 , the pixel structure further includes a backlight layer 6 and a color filter layer 5 along the light emitting direction, and a liquid crystal layer 4 is arranged between the color filter layer 5 and the transistor substrate. The common electrode 35 is connected to the power supply, and the pixel electrode 22 is electrically connected to the display signal control terminal through the switching device to control the deflection angle of the liquid crystal molecules in the liquid crystal layer 4 and block the backlight emitted from the backlight layer 6 . In the pixel structure shown in this embodiment, there are three sub-pixels with similar structures, and each sub-pixel only has a different color of the corresponding color filter layer 5; the pixel electrode 22 of each sub-pixel is controlled independently, so that the backlight can pass through the color filter. After the film layer 5, different colors are displayed from the light emitting side of the pixel structure. When multiple pixel structures form an array substrate, a color display panel can be formed.

The backlight layer 6 may include a backlight plate 61 for providing backlight and a light guide layer 62 for guiding light. The light guide layer 62 may be made of glass or optical grade PC, PMMA and the like. The backlight source is emitted from the backlight panel 61, passes through the light guide layer 62 and the color filter layer 5, and then reaches the liquid crystal layer 4; the external control chip controls the input voltage of the common electrode 35 and the element electrode 22 to control the liquid crystal layer 4. The deflection direction and deflection angle of the liquid crystal molecules make the backlight emit from the liquid crystal layer 4 to form pixels of a specific color, and emit from the light-transmitting pixel electrodes 22 . The structures and processes of the liquid crystal layer 4 , the color filter layer 5 , the backlight layer 6 , the backlight plate 61 , and the light guide layer 62 are prior art, and will not be repeated here.

According to the above embodiments of the thin film transistor substrate and pixel structure, the present invention also proposes a display device, which includes the above thin film transistor substrate or pixel structure, so that the non-display area of the display device has the aforementioned low reflection and light shielding effects.

The above descriptions are only part of the embodiments of the present invention. It should be pointed out that those skilled in the art can make some improvements and modifications without departing from the principles of the present invention. It should be regarded as the protection scope of the present invention.

Claims (10)

1. A method for manufacturing a thin film transistor substrate, comprising: forming a transition layer on the base substrate by using a material containing a metal target; Oxygen is introduced during the process of forming the transition layer, so that the metal target is oxidized to form a light-absorbing layer capable of absorbing light; forming a source-drain metal conductive layer on the light absorbing layer; Through an etching process, the light absorbing layer and the source-drain metal conductive layer in the preset light-transmitting region are removed together. 2. The manufacturing method according to claim 1, wherein the metal target material comprises one of molybdenum, molybdenum alloy, titanium, titanium alloy or molybdenum-titanium alloy. 3. The manufacturing method according to claim 1, wherein a transition layer is formed on the base substrate by a sputtering process; during deposition, an inert gas is fed at a rate of 500 sccm-700 sccm. 4. manufacture method according to claim 3, is characterized in that, the rate that described feeds oxygen is 600sccm-800sccm, and the thickness of described light-absorbing layer is The light absorbing layer includes metal oxide. 5 . The manufacturing method according to claim 1 , characterized in that nitrogen gas is also fed into the oxygen gas at the same time, so as to form a light-absorbing layer including metal oxynitride. 6 . 6. The manufacturing method according to claim 1, wherein the step of removing the light-absorbing layer and the source-drain metal conductive layer in the preset light-transmitting region together through an etching process includes: Coating photoresist on the source-drain metal conductive layer; Exposing the predetermined light-transmitting area to remove the photoresist in the predetermined light-transmitting area; The first etching treatment is performed on the exposed substrate structure to remove the light absorbing layer and the source-drain metal conductive layer in the preset light-transmitting region. 7. The preparation method according to claim 6, further comprising: Performing half-exposure processing on the preset source-drain interval region while exposing the preset light-transmitting region; After the first etching process is performed on the exposed substrate structure, ashing treatment is performed on the predetermined source-drain spacer region to remove the photoresist in the predetermined source-drain spacer region; The ashing-processed substrate structure is subjected to a second etching process to remove the source-drain metal conductive layer in the preset source-drain interval region. 8. A thin film transistor substrate, characterized in that the thin film transistor substrate is manufactured by the manufacturing method described in any one of claims 1-7. 9. A pixel structure, comprising the thin film transistor substrate according to claim 8. 10. A display device, comprising the thin film transistor substrate according to claim 8.