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CN108511430A - A kind of crystallo-luminescence paster LED lamp bead and preparation method thereof - Google Patents

A kind of crystallo-luminescence paster LED lamp bead and preparation method thereof Download PDF

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Publication number
CN108511430A
CN108511430A CN201810400622.1A CN201810400622A CN108511430A CN 108511430 A CN108511430 A CN 108511430A CN 201810400622 A CN201810400622 A CN 201810400622A CN 108511430 A CN108511430 A CN 108511430A
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led chip
lamp bead
holder
led
crystal
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曹永革
申小飞
文子诚
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Renmin University of China
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Renmin University of China
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)

Abstract

本发明涉及一种晶体发光贴片LED灯珠及其制备方法，其包括LED芯片、金丝、晶体片和支架；所述支架采用杯形结构，所述LED芯片通过固晶胶间隔设置在所述支架的杯形结构内部，各所述LED芯片通过所述金丝依次串联，且位于最外侧的所述LED芯片一端经所述金丝与所述支架连接，该LED芯片另一端经所述金线与相邻的所述LED芯片连接；位于所述支架杯形结构顶部设置有所述晶体片，所述晶体片将所述LED芯片封闭在所述支架内。本发明发光均匀，晶体耐高温长时间工作灯珠不衰减，材质坚硬可靠性高。本发明制作出的LED贴片灯珠光斑均匀，并能有效保护LED内部金线结构。

The present invention relates to a crystal luminescent patch LED lamp bead and a preparation method thereof, which comprises an LED chip, a gold wire, a crystal sheet and a bracket; Inside the cup-shaped structure of the stent, each of the LED chips is connected in series through the gold wire, and one end of the outermost LED chip is connected to the stent through the gold wire, and the other end of the LED chip is connected to the stent through the gold wire. The gold wires are connected to the adjacent LED chips; the crystal plate is arranged on the top of the support cup-shaped structure, and the crystal plate seals the LED chips in the support. The invention emits light evenly, the lamp beads of the crystal can withstand high temperature and work for a long time without attenuation, and the material is hard and reliable. The pearl spot of the LED chip lamp produced by the invention is even, and can effectively protect the gold wire structure inside the LED.

Description

一种晶体发光贴片LED灯珠及其制备方法A kind of crystal light-emitting patch LED lamp bead and preparation method thereof

技术领域technical field

本发明涉及一种贴片LED灯珠技术领域，特别是关于一种晶体发光贴片LED灯珠及其制备方法。The invention relates to the technical field of a patch LED lamp bead, in particular to a crystal light-emitting patch LED lamp bead and a preparation method thereof.

背景技术Background technique

LED贴片灯珠是目前市面上最常见的一种LED灯珠，因方便组装和贴片SMT工艺，应用非常广泛；现有的LED贴片灯珠在制作过程中，是将荧光粉与硅胶混合搅拌均匀，点入支架碗杯中并进行烘烤，但在此过程中，很容易出现荧光粉与硅胶的混合不均匀，荧光粉沉淀的不一致，从而造成成品LED贴片灯珠的颜色一致性及光斑效果都非常不理想。硅胶混荧光粉不能长时间耐高温，导致灯珠光效有较大衰减；硅胶混荧光粉烘烤固化后材质胶软，外力很轻易导致硅胶变形，从而拉断金线，导致死灯或不良。LED patch lamp bead is the most common type of LED lamp bead on the market at present. It is widely used because of its convenient assembly and patch SMT process. Mix and stir evenly, point into the stand bowl and bake, but in the process, it is easy to have uneven mixing of phosphor powder and silica gel, inconsistent phosphor precipitation, resulting in the same color of the finished LED patch lamp beads Sexuality and spot effect are very unsatisfactory. Silica gel mixed with fluorescent powder cannot withstand high temperature for a long time, resulting in a large attenuation of the pearlescent effect of the lamp; after the silica gel mixed with phosphor is baked and cured, the material is soft, and external force can easily cause the silica gel to deform, thereby breaking the gold wire, resulting in dead lights or defective lights.

发明内容Contents of the invention

针对上述问题，本发明的目的是提供一种晶体发光贴片LED灯珠及其制备方法，其发光均匀，晶体耐高温长时间工作灯珠不衰减，材质坚硬可靠性高。本发明制作出的LED贴片灯珠光斑均匀，并能有效保护LED内部金线结构。In view of the above problems, the object of the present invention is to provide a crystal light-emitting patch LED lamp bead and its preparation method, which has uniform light emission, crystal high-temperature-resistant lamp bead does not decay for a long time, and the material is hard and reliable. The pearl spot of the LED chip lamp produced by the invention is even, and can effectively protect the gold wire structure inside the LED.

为实现上述目的，本发明采取以下技术方案：一种晶体发光贴片LED灯珠，其特征在于：该LED灯珠包括LED芯片、金丝、晶体片和支架；所述支架采用杯形结构，所述LED芯片通过固晶胶间隔设置在所述支架的杯形结构内部，各所述LED芯片通过所述金丝依次串联，且位于最外侧的所述LED芯片一端经所述金丝与所述支架连接，该LED芯片另一端经所述金线与相邻的所述LED芯片连接；位于所述支架杯形结构顶部设置有所述晶体片，所述晶体片将所述LED芯片封闭在所述支架内。In order to achieve the above object, the present invention adopts the following technical solutions: a crystal light-emitting patch LED lamp bead, which is characterized in that: the LED lamp bead includes an LED chip, a gold wire, a crystal sheet and a bracket; the bracket adopts a cup-shaped structure, The LED chips are arranged at intervals inside the cup-shaped structure of the bracket through the crystal-bonding glue, each of the LED chips is connected in series through the gold wire, and one end of the LED chip located on the outermost side is connected to the gold wire through the gold wire. The other end of the LED chip is connected to the adjacent LED chip through the gold wire; the crystal sheet is arranged on the top of the cup-shaped structure of the bracket, and the crystal sheet seals the LED chip in the within the bracket.

进一步，所述支架包括导电正极、导电负极、绝缘隔层和反光杯；所述导电正极和导电负极之间通过所述绝缘隔层连接成一体，构成基座；位于所述基座上部设置有所述反光杯，所述反光杯的杯口顶部覆盖有所述晶体片。Further, the support includes a conductive positive electrode, a conductive negative electrode, an insulating interlayer and a reflective cup; the conductive positive electrode and the conductive negative electrode are connected into one body through the insulating interlayer to form a base; the upper part of the base is provided with In the reflective cup, the top of the mouth of the reflective cup is covered with the crystal sheet.

进一步，所述反光杯的截面采用锥形结构，且杯口直径大于杯底直径。Further, the cross-section of the reflective cup adopts a tapered structure, and the diameter of the cup opening is larger than the diameter of the cup bottom.

进一步，所述导电正极的截面长度大于所述导电负极的截面长度。Further, the cross-sectional length of the conductive positive electrode is greater than the cross-sectional length of the conductive negative electrode.

进一步，所述LED芯片间隔设置在所述导电正极上，且位于所述导电正极一端部并靠近所述导电负极的所述LED芯片一端与所述导电负极通过所述金丝连接；位于所述导电正极另一端部的所述LED芯片一端与相邻的所述LED芯片连接，另一端通过所述金丝与所述导电正极连接。Further, the LED chips are arranged on the conductive positive electrode at intervals, and one end of the LED chip located at one end of the conductive positive electrode and close to the conductive negative electrode is connected to the conductive negative electrode through the gold wire; One end of the LED chip at the other end of the conductive positive electrode is connected to the adjacent LED chip, and the other end is connected to the conductive positive electrode through the gold wire.

进一步，所述晶体片的长度与所述支架长度相同。Further, the length of the crystal sheet is the same as the length of the bracket.

进一步，所述晶体片具有厚度。Further, the crystal sheet has a thickness.

进一步，所述反光杯顶部内侧壁设置有凹槽，所述晶体片嵌设在所述凹槽内，所述晶体片上表面与所述支架上表面位于同一水平线。Further, the inner wall of the top of the reflector is provided with a groove, the crystal sheet is embedded in the groove, and the upper surface of the crystal sheet is at the same level as the upper surface of the bracket.

进一步，所述晶体片具有厚度。Further, the crystal sheet has a thickness.

一种如上述LED灯珠的制备方法，其特征在于包括以下步骤：1)通过固晶机在支架的反光杯内用固晶胶把LED芯片固定在反光杯底部；2)将固定好LED芯片的支架进行烘烤固定，使LED芯片固定在支架底部；3)通过超声波焊线机将烘烤好的LED芯片通过金丝依次串联连接，且第一个LED芯片正极焊接在支架的导电正极上，最后一个LED芯片负极焊在支架的导电负极上；4)通过固晶机用固晶胶把晶体片固定在焊好导电线的支架反光杯顶部；5)烘烤固定晶体片，完成灯珠制作。A preparation method of the above-mentioned LED lamp bead, which is characterized in that it includes the following steps: 1) fixing the LED chip on the bottom of the reflective cup with a crystal-bonding machine in the reflective cup of the support by a crystal-bonding machine; 2) fixing the LED chip 3) The baked LED chips are sequentially connected in series through gold wires by an ultrasonic wire bonding machine, and the positive pole of the first LED chip is welded on the conductive positive pole of the bracket , the negative electrode of the last LED chip is welded on the conductive negative electrode of the bracket; 4) Fix the crystal sheet on the top of the reflective cup of the bracket with soldered conductive wires through the crystal bonding machine; 5) Bake and fix the crystal sheet to complete the lamp bead make.

本发明由于采取以上技术方案，其具有以下优点：1、本发明采用晶体发光，晶体耐长时间高温不衰减，材质坚硬可靠性高，保证了出光效率，增加灯珠的使用寿命。2、本发明采用晶体发光替代硅胶混荧光粉，并固定厚度的晶体发光，能有效确保灯珠出光均匀，光斑均匀；产品颜色批量一致性好，可减少分光分色工艺。3、本发明采用晶体覆盖光源表面，可保护支架反光杯内部线路，增加LED灯珠可靠性。4、本发明采用晶体覆盖光源表面，可有效防止水汽进入内部线路层，有效防止反光层氧化发黑导致LED灯珠衰减。5、本发明制作出的LED贴片灯珠光斑均匀，且能有效保护LED内部金线结构。Due to the adoption of the above technical scheme, the present invention has the following advantages: 1. The present invention uses crystals to emit light. The crystals are resistant to high temperature for a long time without attenuation. The material is hard and reliable, which ensures the light output efficiency and increases the service life of the lamp beads. 2. The present invention uses crystal light instead of silica gel mixed with fluorescent powder, and crystal light with a fixed thickness can effectively ensure uniform light output from lamp beads and uniform light spots; the product color has good batch consistency and can reduce the color separation process. 3. The present invention uses crystals to cover the surface of the light source, which can protect the internal circuit of the bracket reflector and increase the reliability of the LED lamp bead. 4. The present invention uses crystals to cover the surface of the light source, which can effectively prevent water vapor from entering the internal circuit layer, and effectively prevent the oxidation and blackening of the reflective layer, which will cause the LED lamp beads to attenuate. 5. The pearl light spot of the LED SMD lamp produced by the present invention is uniform, and can effectively protect the gold wire structure inside the LED.

附图说明Description of drawings

图1是本发明实施例一中的灯珠整体结构示意图；Fig. 1 is a schematic diagram of the overall structure of a lamp bead in Embodiment 1 of the present invention;

图2是图1的俯视图；Fig. 2 is the top view of Fig. 1;

图3是本发明实施例二中的灯珠整体结构示意图；Fig. 3 is a schematic diagram of the overall structure of the lamp bead in Embodiment 2 of the present invention;

图4是图3的俯视图。FIG. 4 is a top view of FIG. 3 .

具体实施方式Detailed ways

在本发明的描述中，需要理解的是，术语“上”、“下”“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。下面结合附图和实施例对本发明进行详细的描述。In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "inner", "outer" and so on is based on the orientation or positional relationship shown in the drawings, and is only for convenience The present invention is described and simplified descriptions do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operate in a specific orientation, and thus should not be construed as limiting the present invention. The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

实施例一：Embodiment one:

在本实施例中，如图1、图2所示，本发明提供一种晶体发光贴片LED灯珠，其包括LED芯片1、金丝2、晶体片3和支架，金丝2为导电丝。支架采用杯形结构，LED芯片1通过固晶胶4间隔设置在支架的杯形结构内部，各LED芯片1通过金丝2依次串联，且位于最外侧的LED芯片1一端经金丝2与支架连接，该LED芯片1另一端经金线与相邻的LED芯片1连接。位于支架杯形结构顶部设置有晶体片3，由晶体片3将LED芯片1封闭在支架内，形成LED灯珠。In this embodiment, as shown in Figure 1 and Figure 2, the present invention provides a crystal light-emitting patch LED lamp bead, which includes an LED chip 1, a gold wire 2, a crystal sheet 3 and a bracket, and the gold wire 2 is a conductive wire . The bracket adopts a cup-shaped structure, and the LED chips 1 are arranged at intervals inside the cup-shaped structure of the bracket through the crystal-bonding glue 4. Each LED chip 1 is connected in series through the gold wire 2, and one end of the outermost LED chip 1 is connected to the bracket through the gold wire 2. The other end of the LED chip 1 is connected to the adjacent LED chip 1 via a gold wire. A crystal sheet 3 is arranged on the top of the cup-shaped structure of the bracket, and the LED chip 1 is enclosed in the bracket by the crystal sheet 3 to form an LED lamp bead.

上述实施例中，支架包括导电正极5、导电负极6、绝缘隔层7和反光杯8。导电正极5和导电负极6之间通过绝缘隔层7连接成一体，构成基座；位于基座上部设置有反光杯8，反光杯8的杯口顶部覆盖有晶体片3。其中，反光杯8的截面采用锥形结构，且杯口直径大于杯底直径。导电正极5的截面长度大于导电负极6的截面长度。In the above embodiment, the support includes a conductive positive electrode 5 , a conductive negative electrode 6 , an insulating interlayer 7 and a reflective cup 8 . The conductive positive electrode 5 and the conductive negative electrode 6 are connected together through an insulating interlayer 7 to form a base; a reflective cup 8 is arranged on the upper part of the base, and the top of the cup mouth of the reflective cup 8 is covered with a crystal plate 3 . Wherein, the section of the reflective cup 8 adopts a tapered structure, and the diameter of the cup mouth is larger than the diameter of the cup bottom. The cross-sectional length of the conductive positive electrode 5 is greater than the cross-sectional length of the conductive negative electrode 6 .

上述实施例中，各LED芯片1间隔设置在导电正极5上，且位于导电正极5一端部并靠近导电负极6的LED芯片1一端与导电负极6通过金丝2连接，另一端与相邻的LED芯片1连接。位于导电正极5另一端部的LED芯片1一端与相邻的LED芯片1连接，另一端通过金丝2与导电正极5连接。In the above-mentioned embodiment, each LED chip 1 is arranged on the conductive positive electrode 5 at intervals, and one end of the LED chip 1 located at one end of the conductive positive electrode 5 and close to the conductive negative electrode 6 is connected to the conductive negative electrode 6 through a gold wire 2, and the other end is connected to the adjacent conductive positive electrode 6. LED chip 1 connection. One end of the LED chip 1 located at the other end of the conductive positive electrode 5 is connected to the adjacent LED chip 1 , and the other end is connected to the conductive positive electrode 5 through the gold wire 2 .

上述各实施例中，晶体片3的长度与支架长度相同，且晶体片3具有厚度，该厚度根据预先设定要求进行设置。In the above embodiments, the length of the crystal plate 3 is the same as the length of the bracket, and the crystal plate 3 has a thickness, which is set according to preset requirements.

实施例二：Embodiment two:

如图3、图4所示，本实施例中提供的晶体发光贴片LED灯珠结构与实施例一中的结构基本相同，不同的是，在本实施例中，支架的反光杯8顶部内侧壁设置有凹槽，晶体片3嵌设在凹槽内，使得晶体片3上表面与支架上表面位于同一水平线。As shown in Figure 3 and Figure 4, the structure of the crystal light-emitting patch LED lamp bead provided in this embodiment is basically the same as that in Embodiment 1. The difference is that in this embodiment, the inside of the top of the reflective cup 8 of the bracket The wall is provided with a groove, and the crystal sheet 3 is embedded in the groove, so that the upper surface of the crystal sheet 3 and the upper surface of the bracket are located at the same horizontal line.

上述各实施例中，晶体片3采用授权公告号为CN106270523B中的晶体片结构。In the above-mentioned embodiments, the crystal plate 3 adopts the structure of the crystal plate in the authorized announcement number CN106270523B.

本发明还提供一种晶体发光贴片LED灯珠制备方法，其包括以下步骤：The present invention also provides a method for preparing a crystal light-emitting patch LED lamp bead, which includes the following steps:

1)通过固晶机在支架的反光杯8内用固晶胶4把LED芯片1固定在反光杯8底部；其中，支架的尺寸优选为5×5mm；1) Fix the LED chip 1 on the bottom of the reflective cup 8 with crystal bonding glue 4 in the reflective cup 8 of the bracket through a crystal bonder; wherein, the size of the bracket is preferably 5×5 mm;

2)将固定好LED芯片1的支架进行烘烤固定，以使LED芯片1固定在支架底部；其中，烘烤温度优选为160℃，烘烤时间优选为2小时；2) Baking and fixing the bracket on which the LED chip 1 is fixed, so that the LED chip 1 is fixed on the bottom of the bracket; wherein, the baking temperature is preferably 160° C., and the baking time is preferably 2 hours;

3)通过超声波焊线机将烘烤好的LED芯片1通过导电丝(金丝2)依次串联连接，且第一个LED芯片1正极焊接在支架的导电正极5上，最后一个LED芯片1负极焊在支架的导电负极6上；金丝2的直径优选为1.0um；3) The baked LED chips 1 are sequentially connected in series through the conductive wire (gold wire 2) through an ultrasonic wire bonding machine, and the positive electrode of the first LED chip 1 is welded on the conductive positive electrode 5 of the bracket, and the negative electrode of the last LED chip 1 is Welded on the conductive negative electrode 6 of the support; the diameter of the gold wire 2 is preferably 1.0um;

4)通过固晶机用固晶胶4把晶体片3固定在焊好导电线的支架反光杯8顶部；4) Fix the crystal sheet 3 on the top of the support reflector cup 8 with the conductive wire welded with the crystal glue 4 by the crystal bonder;

5)烘烤固定晶体片3，完成灯珠制作；其中，烘烤温度优选为150℃，烘烤时间优选为1.5小时。5) Baking and fixing the crystal sheet 3 to complete the production of the lamp bead; wherein, the baking temperature is preferably 150° C., and the baking time is preferably 1.5 hours.

上述各实施例仅用于说明本发明，各部件的结构、尺寸、设置位置及形状都是可以有所变化的，在本发明技术方案的基础上，凡根据本发明原理对个别部件进行的改进和等同变换，均不应排除在本发明的保护范围之外。The above-mentioned embodiments are only used to illustrate the present invention, and the structure, size, location and shape of each component can be changed. On the basis of the technical solution of the present invention, all improvements to individual components according to the principles of the present invention and equivalent transformations shall not be excluded from the protection scope of the present invention.

Claims (10)

1. a kind of crystallo-luminescence paster LED lamp bead, it is characterised in that：The LED lamp bead includes LED chip, spun gold, crystal wafer and branch Frame；The holder uses cup-shaped structure, the LED chip to be arranged at intervals on by crystal-bonding adhesive in the cup-shaped structure of the holder Portion, each LED chip are sequentially connected in series by the spun gold, and described LED chip one end on the outermost side is through the spun gold It is connect with the holder, which connect through the gold thread with the adjacent LED chip；Positioned at the holder It is provided with the crystal wafer at the top of cup-shaped structure, the LED chip is enclosed in the holder by the crystal wafer.
2. LED lamp bead as described in claim 1, it is characterised in that：The holder include positive conductive electrode, conductive cathode, insulation every Layer and reflector；It is linked into an integrated entity by the interlayer insulating layer between the positive conductive electrode and conductive cathode, constitutes pedestal；It is located at The pedestal top is provided with the reflector, and the crystal wafer is covered at the top of the rim of a cup of the reflector.
3. LED lamp bead as claimed in claim 2, it is characterised in that：The section of the reflector uses pyramidal structure, and rim of a cup is straight Diameter is more than bottom of a cup diameter.
4. LED lamp bead as claimed in claim 2, it is characterised in that：The cross-sectional length of the positive conductive electrode is more than described conductive negative The cross-sectional length of pole.
5. the LED lamp bead as described in claim any one of 2-4, it is characterised in that：The LED chip is arranged at intervals on the conduction On anode, and positioned at the positive conductive electrode one end and close to described LED chip one end of the conductive cathode and the conduction Cathode is connected by the spun gold；Described LED chip one end positioned at described positive conductive electrode the other end and the adjacent LED Chip connects, and the other end is connect by the spun gold with the positive conductive electrode.
6. the LED lamp bead as described in claim any one of 2-4, it is characterised in that：The length of the crystal wafer and the holder are long It spends identical.
7. LED lamp bead as claimed in claim 6, it is characterised in that：The crystal wafer has thickness.
8. the LED lamp bead as described in claim any one of 2-4, it is characterised in that：The reflector inside top wall is provided with recessed Slot, the crystal wafer are embedded in the groove, and the crystal wafer upper surface is located at same horizontal line with the rack upper surface.
9. LED lamp bead as claimed in claim 8, it is characterised in that：The crystal wafer has thickness.
10. a kind of preparation method of the LED lamp bead as described in claim any one of 1-9, it is characterised in that include the following steps：
1) LED chip is fixed on by bonder by reflector bottom in the reflector of holder with crystal-bonding adhesive；
2) holder for fixing LED chip is subjected to baking fixation, LED chip is made to be fixed on frame bottom；
3) baked LED chip is sequentially connected in series by spun gold by ultrasonic wire welding machine, and first LED chip is just Pole is welded in the positive conductive electrode of holder, the last one LED chip cathode is welded on the conductive cathode of holder；
4) crystal wafer is fixed on crystal-bonding adhesive by bonder at the top of the holder reflector for welding conductor wire；
5) fixed crystal wafer is toasted, lamp bead is completed and makes.
CN201810400622.1A 2018-04-28 2018-04-28 A kind of crystallo-luminescence paster LED lamp bead and preparation method thereof Pending CN108511430A (en)

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Application publication date: 20180907