CN108292603A - Gas supply device - Google Patents
Gas supply device Download PDFInfo
- Publication number
- CN108292603A CN108292603A CN201680068427.2A CN201680068427A CN108292603A CN 108292603 A CN108292603 A CN 108292603A CN 201680068427 A CN201680068427 A CN 201680068427A CN 108292603 A CN108292603 A CN 108292603A
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- China
- Prior art keywords
- gas
- diameter
- gas supply
- cylinder
- supply device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000007921 spray Substances 0.000 claims abstract description 76
- 238000000034 method Methods 0.000 claims abstract description 47
- 230000008569 process Effects 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000007789 gas Substances 0.000 claims description 382
- 150000003254 radicals Chemical class 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 2
- 238000009489 vacuum treatment Methods 0.000 abstract description 54
- 238000009751 slip forming Methods 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 85
- 235000012431 wafers Nutrition 0.000 description 56
- 230000000694 effects Effects 0.000 description 22
- 238000000231 atomic layer deposition Methods 0.000 description 19
- 208000028659 discharge Diseases 0.000 description 15
- 230000035939 shock Effects 0.000 description 13
- 238000005755 formation reaction Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- 239000000376 reactant Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 235000013399 edible fruits Nutrition 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- OUUQCZGPVNCOIJ-UHFFFAOYSA-N hydroperoxyl Chemical compound O[O] OUUQCZGPVNCOIJ-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32348—Dielectric barrier discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3323—Problems associated with coating uniformity
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- Electromagnetism (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The object of the present invention is to provide it is a kind of can with the ultrahigh speed more than Mach to process object substrate supply gas gas supply device.Also, the gas jetting device (1) of the gas supply device of the present invention has spray nozzle part (10).Constitute the circle of the opening portion cross sectional shape diametrically r1 of the first segment limitation cylinder (13) of spray nozzle part (10).Second segment limitation cylinder (14) is continuously formed with first segment limitation cylinder (13) along the Z direction, the circle of opening portion cross sectional shape diametrically r2 will limit the low vacuum treatment chamber (18) of unstrpped gas (G1) that cylinder (13) supplies downwards from first segment and supply.At this moment, diameter r2 is set to meet " r2>r1”.
Description
Technical field
The present invention relates to a kind of gas supply devices for film process.
Background technology
In the art of semiconductor manufacturing, the film forming of progress insulating film etc. on the substrate surface of the handled objects such as wafer is needed
Processing or the processing such as the film surface formed by film forming is performed etching, clean, for these processing, seek at a high speed and
The technology of high-quality.Pursuit is for example related to including high insulation film, semiconductive thin film, highly dielectric thin film, light-emitting film, Gao Ci
At the etching of the excellent film process and high-quality of various high-performance including the film forming of property body thin film, superhard thin film etc.
Reason, stripping, cleaning treatment, pay attention to the crystal column surface (process object substrate surface) of large area realize high-quality and uniformly at
Film and high processing speed.
It is this be related to various thin film techniques or etching, stripping, cleaning treatment are not only applicable to semiconductor element, also may be used
Applied in multiple use field.
Wherein, especially in forming thin film technology, pass through the chemical reaction on the material surface of metal or insulant
The basic technology of nitridation/oxidation/hydrogen bond is promoted to occupy critical positions in film is formed, based on the basic technology, in addition
Various heat treatments are carried out to film or chemical reaction handling, the film for realizing high-quality are formed.
Specifically, having in the manufacture of semiconductor device：Play the role of the low of wiring in semiconductor chip
The highly conductive film of impedance, the high magnetic film with the coil of wire of circuit or magnet function, the capacitor function with circuit
High dielectric film and with the less high insulation function of electrical resistance leakage current and based on oxidation or nitridation high insulating film
The film build method of contour performance film.In order to realize the film build method of these high functional membranes, using hot CVD (chemical vapor deposition：
Chemical Vapor Deposition) device, optical cvd device or plasma CVD equipment or hot ALD (atomic layer depositions
Method：Atomic Layer Deposition) device, plasma ALD devices.Especially plasma CVD/ALD devices are big
Amount use, compared with such as hot/optical cvd/ALD devices, plasma CVD/ALD devices have can reduce film-forming temperature and at
The advantage that film speed is fast and can realize the film process in the short time etc..
For example, by nitride film (SiON, HfSiON etc.) or oxidation film (SiO2、HfO2) etc. gate insulating films film forming in work
In the case of on wafer to deal with objects substrate, generally use has used the following technology of plasma CVD/ALD devices.
Hot CVD/ALD devices make to become high temperature in wafer or container, improve the reactivity of supply gas, and film is formed a film in crystalline substance
On circle, but when wafer to be exposed under high temperature, since pyrolytic damage etc. can lead to decrease in yield.
Therefore, used mostly instead of hot CVD/ALD now used the plasma CVD of plasma/ALD carry out at
Film.Such as (plasma) CVD/ALD technologies are disclosed in 1~patent document of patent document 3.
It is filled in film process such as this pervious plasma CVD/ALD or hot CVD/ALD such as disclosed in Patent Document 1
Following manner is used in setting：Make gassy in film process device, the energy of plasma or thermal energy is used in combination to make to be full of
Gas activation makes film be deposited by the chemical reaction handling being supplied between the gas on crystal column surface.It riddles
The gas flow rate of activated gas in film process device is only the gas flow rate of random Brownian movement, and gas particle itself is no
With at high speed, therefore, although being effective for the deposition film formation reaction on substrate surface, it is not suitable for substrate surface
Homogeneous film formation on concave-convex very big face or three-dimensional film forming face.In addition, in the case where being high response gas, due to chemistry
Reaction time is short, therefore the service life is very short.Accordingly, there exist following disadvantages：Only reaction is promoted on the surface of a substrate, and in bumps
Supply gas does not reach and can not carry out homogeneous film formation on the face of very big high aspect ratio.It in this case needs quickly
Reaction gas is directed to wafer inner surface in time, it is enable equably to be reacted and be formed a film to wafer inner surface, or
Person assigns energy to the gas being full of in wafer inner surface and it is made to be converted to activated gas.
In the film process device of CVD/ALD disclosed in Patent Document 2, although similarly supply gas is simultaneously into container
So that it is deposited in whole wafer, but in the case that gas it is with high reactivity can exist gas reach wafer before lose reaction
The problem of property.Therefore, there is known generate plasma in container to generate the gas of high response and be supplied on substrate
Method or make in container or wafer improves reactive method as high temperature.
In patent document 3 in the disclosed plasma CVD/ALD devices for having used plasma, to the gas in supply
Body assigns the energy of plasma, and the gas that it is converted into high response is made to be supplied.Have in this case and heat film forming phase
The advantages of comparing the temperature that can lower set in wafer or container, but plasma-generating source is needed mutually to be leaned on processed surface
Closely, it therefore also has because substrate is close to the shortcomings that being damaged instead by the influence of substrate itself plasma.In addition,
Currently used plasma CVD/ALD devices are compared with the film process device of pervious CVD/ALD, with than
It is applicable in three-dimensional film process on smaller concave-convex crystal column surface, but in the crystalline substance for realizing the high aspect ratio with bigger bumps
Three-dimensional film process on circular surfaces and the three-dimensional aspect at membrane structure for obtaining high-quality, are practically impossible.
In patent document 4 in disclosed manufacture three-dimensional structure method for making semiconductor, it is located at TSV (through-
silicon via：Silicon hole) barrier film of structure periphery has to homogeneous film formation.In this case, on depth direction it is uniform at
Film has certain limit, therefore, if being divided into film forming that is multiple and according to each dried layer carrying out barrier film in the depth direction.
Existing technical literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2004-111739 bulletins
Patent document 2：Japanese Unexamined Patent Publication 2013-219380 bulletins
Patent document 3：Japanese Unexamined Patent Publication 2001-135628 bulletins
Patent document 4：Japanese Unexamined Patent Publication 2014-86498 bulletins
Invention content
Problem to be solved by the invention
Make to form authorized pressure in film process device as described above, pervious forming thin film technology is conveying supply gas
After carry out film process, therefore lower at a high speed need not have directive property.Therefore, it is not suitable for being required recently to irregular
Film process that face carries out, especially the wafer progress for being representative with high aspect ratio using the hole shape with depth at
In film process.
In addition, in order to which the high response gas short time is supplied to crystal column surface, as to low vacuum treatment chamber rapidly
The means of supply gas are fitted with the following method：Single limitation cylinder (aperture) is set to improve the feed speed of gas, by
Low vacuum treatment intracavitary sprays gas in the environment of low vacuum state, to make gas to be more than the ultrahigh speed of Mach (Mach)
It sprays.In this case, need by the pressure of the low vacuum treatment intracavitary of pressure and low vacuum state in gas supply device it
Between pressure difference be set as authorized pressure ratio or more, the pressure difference is bigger, and the pressure of low vacuum treatment intracavitary is lower, more can
As the supply gas of high speed, so as in short time to crystal column surface supply gas.Reducing the logical circulation road in limiting cylinder
The opening portion diameter of diameter is come when increasing pressure difference, since flow velocity becomes faster and gas supplying time shortens.
But to spray gas more than the ultrahigh speed of Mach, gas velocity is rushed in the gas of Mach velocity
It hits under pressure and temperature state, gas flow rate range (gas efflux velocity) can be had an impact, can be caused in some ejection position
It sets gas flow rate extremely to decline, as a result, producing as mach disk state (in the local gas flow rate pole of some ejection position
Hold the state declined) the phenomenon that.The phenomenon that becoming the mach disk state while it is desirable to reduce to the greatest extent, but see not yet specific
Solution countermeasure.
Problem as described above is solved in the present invention, and its purpose is to provide a kind of gas supply device, the gases
Feedway can be effectively inhibited along with being supplied to substrate when with the ultrahigh speed more than Mach to substrate supply gas
Surge or state of temperature caused by gas ultrahigh speed and extreme the phenomenon that slowing down is generated in gas.
The means used to solve the problem
Gas supply device of the present invention has：Mounting portion, mounting process object substrate；And gas jetting device,
It is set to the top of the mounting portion, has the processing chamber of opening portion to the process object substrate supply gas, institute from bottom surface
Gas jetting device is stated to have：Receiving room temporarily stores the gas supplied from gas supply port；The processing chamber；And spray
Mouth is set between a receiving room and the processing chamber, and the spray nozzle part has：First limitation cylinder, is formed
Opening portion cross sectional shape under overlooking is the circle of first diameter, which supplies downwards in a receiving room
Gas；And the second limitation cylinder, it is formed to overlook the circle that lower opening portion cross sectional shape is second diameter, this second is limited
Cylinder processed supplies the gas supplied from the first limitation cylinder towards the processing chamber, and the first diameter is set to make described one
Pressure difference in secondary receiving room and in the processing chamber becomes authorized pressure ratio or more, and the second diameter is set to than described
First diameter is long.
Invention effect：
The gas jetting device of the gas supply device of the present application that technical solution 1 is recorded, can be by spray nozzle part
The first limitation cylinder with first diameter make the gas sprayed to processing chamber with directive property, therefore, it is possible to be more than horse
Conspicuous ultrahigh speed to process object substrate supply gas.At this moment, by be set between the first limitation cylinder and processing chamber second
The presence for limiting cylinder, can inhibit to generate institute by surge and the state of temperature of the gas ultrahigh speed along with ejection
The mach disk phenomenon that the gas of ejection extremely slows down.
As a result, the gas supply device of the present application that technical solution 1 is recorded reaches following effect：It can be to processing
The supply of object substrate is suitble to the gas to form a film on the crystal column surface of high aspect ratio.
The purpose of the present invention, feature, situation and advantage can be able to clearer by following detailed description of and attached drawing.
Description of the drawings
Fig. 1 is the definition graph of the structure for the gas supply device for showing embodiments of the present invention 1.
Fig. 2 is the definition graph of the structure for the gas supply device for showing embodiments of the present invention 2.
Fig. 3 is the definition graph of the structure for the gas supply device for showing embodiments of the present invention 3.
Fig. 4 is the definition graph (one) of the structure for the gas supply device for showing embodiments of the present invention 4.
Fig. 5 be the structure for the gas supply device for showing embodiments of the present invention 4 definition graph (secondly).
Fig. 6 is the definition graph of the structure for the gas supply device for showing embodiments of the present invention 5.
Fig. 7 is saying for the speed state for the gas jet for schematically illustrating the gas supply device for having used embodiment 1
Bright figure.
Fig. 8 is saying for the pressure state for the gas jet for schematically illustrating the gas supply device for having used embodiment 1
Bright figure.
Fig. 9 is the definition graph for the speed state for schematically illustrating the gas jet for having used pervious gas supply device.
Figure 10 is the definition graph for the pressure state for schematically illustrating the gas jet for having used pervious gas supply device.
Figure 11 is the gas in the case of schematically illustrating the pressure ratio of a receiving room and low vacuum treatment chamber less than 30 times
The definition graph of the speed state of body jet stream.
Figure 12 is the gas in the case of schematically illustrating the pressure ratio of a receiving room and low vacuum treatment chamber less than 30 times
The definition graph of the pressure state of body jet stream.
Figure 13 is to schematically illustrate saying for generation Mach dish structure in the case of having used pervious gas supply device
Bright figure.
Figure 14 is the definition graph of the effect in the case of schematically illustrating the gas supply device for having used present embodiment.
Specific implementation mode
<Embodiment 1>
Fig. 1 is the definition graph of the structure for the gas supply device for showing embodiments of the present invention 1.It is shown in FIG. 1
XYZ orthogonal coordinate system.
As shown in the drawing, the gas supply device of embodiment 1 as the wafer 25 of process object substrate by carrying
The mounting table 19 (mounting portion) and gas jetting device 1 set are constituted, and the gas jetting device 1 is set to the top of mounting table 19, from
Bottom surface has 25 supply gas of wafer of the low vacuum treatment chamber 18 (processing chamber) of opening portion downwards.
Gas jetting device 1 have a receiving room 11, gas supply port 12, first segment limitation cylinder 13 (first limitation cylinder),
Second segment limits cylinder 14 (the second limitation cylinder) and low vacuum treatment chamber 18 (processing chamber) is used as main composition portion.
Also, spray nozzle part 10 is formed by the structure comprising restricted cylinder group 13 and 14.That is, spray nozzle part 10 is arranged on once
Between receiving room 11 and low vacuum treatment chamber 18.
The opening portion cross sectional shape for constituting (vertical view) on the X/Y plane of the first segment limitation cylinder 13 of spray nozzle part 10 is in (straight)
The circle of diameter r1 (first diameter), by the unstrpped gas G1 of a receiving room 11, (-Z direction) supplies downwards.Diameter r1
It is set as making the pressure difference in a receiving room 11 and low vacuum treatment chamber 18 to become authorized pressure ratio or more.
Second segment limitation cylinder 14 is continuously formed with first segment limitation cylinder 13 along the Z direction, (vertical view) bottom on X/Y plane
The opening portion cross sectional shape in face is in the circle of (straight) diameter r2 (second diameter), and low vacuum treatment chamber 18 downwards is supplied from first
The unstrpped gas G1 that section limitation cylinder 13 supplies.Diameter r2 is set as meeting " r2>r1”.
For example, set first segment limitation cylinder 13 diameter r1 as diameter 1.35mm, depth (extend in z-direction formation depth
Degree) it is 1mm, the diameter r2 that second segment limits cylinder 14 is diameter 8mm, and depth (the formation depth extended in z-direction) is 4mm,
With flow 4slm (standard liter per minute：Standard liters per minute) it supplies as unstrpped gas G1 for example
Nitrogen.To, via first segment limit cylinder 13 unstrpped gas G1 become ultrahigh speed gas, and via second segment limit cylinder 14 and
It is fed into low vacuum treatment chamber 18.
One time receiving room 11 temporarily stores the unstrpped gas G1 supplied from gas supply port 12.In receiving room 11
Pressure becomes a pressure.
The unstrpped gas G1 supplied from gas supply port 12 limits cylinder after having passed through a receiving room 11 by first segment
13 determine secondary pressure.Unstrpped gas G1 is fed into via second segment limitation cylinder 14 in low vacuum treatment chamber 18.
At this moment, the pressure ratio PC quilts of a pressure in a receiving room 11 and the secondary pressure in low vacuum treatment chamber 18
It is set as 30 times or more.Then, have passed through first segment limitation cylinder 13 unstrpped gas G1 flow velocity due to above-mentioned pressure ratio PC and
As flow velocity more than Mach, by second segment limit cylinder 14 there are by inhibit unstrpped gas G1 to generate due to high rapid fire
Stream and generate mach disk state the phenomenon that after, be fed into low vacuum treatment chamber 18.
For example, it is 266Pa to set a pressure in a receiving room 11 as the pressure in 30kPa, low vacuum treatment chamber 18,
Unstrpped gas G1 is more than " 5 ", the wafer 25 being fed into mounting table 19 as the highest Mach number of ultrahigh speed gas.
At this moment, worry that the mach disk state that will produce is effectively suppressed since second segment limits the presence of cylinder 14, because
This can be with the state of high speed to wafer supply gas compared with pervious technology.
That is, limiting cylinder 14 by being provided with second segment, pressure distribution and flow velocity in low vacuum treatment chamber 18 are being mitigated
While being distributed and avoid the generation of mach disk MD states, unstrpped gas G1 is supplied in low vacuum treatment chamber 18, and by
It is supplied to and is set on the wafer 25 of mounting table 19 (wafer platform) above.Gas after reaction by from be set to gas spray
Exhaust outlet 21 between device 1 and mounting table 19 is discharged.
(with the comparison etc. of pre-structure)
Fig. 7 is the gas jet for schematically illustrating the gas supply device for having used the embodiment 1 with spray nozzle part 10
Speed state definition graph.
Fig. 8 is the gas jet for schematically illustrating the gas supply device for having used the embodiment 1 with spray nozzle part 10
Pressure state definition graph.
Fig. 9 is to schematically illustrate that the pervious gas with the spray nozzle part being only made of first segment limitation cylinder 13 has been used to supply
To the definition graph of the speed state of the gas jet of device.
Figure 10 is to schematically illustrate to have used the pervious gas with the spray nozzle part being only made of first segment limitation cylinder 13
The definition graph of the pressure state of the gas jet of feedway.In Fig. 7~Figure 10, the oblique line portion of topmost is equivalent to for example
The forming region of upper electrode 22 in aftermentioned embodiment 4.In Figure 11 and Figure 12, the oblique line portion of topmost is equivalent to
The forming region of upper electrode 22 in aftermentioned embodiment 4.
As shown in figs, the pressure ratio PC of an above-mentioned pressure and secondary pressure is set to 30 times or more.
From the comparison of Fig. 7 and Fig. 9 it is found that the gas supply device of embodiment 1 generates showing for mach disk MD by avoiding
As can be in the case where not making speed extremely decline to 25 base feed gas G1 of wafer.On the other hand, as shown in figure 9,
Mach disk MD is produced in pervious gas supply device.
Figure 11 is the pressure for being schematically illustrated in a receiving room 11 and low vacuum treatment chamber 18 in the structure of embodiment 1
Than the definition graph of the speed state of the gas jet in the case of 30 times of PC less than.
Figure 12 is the pressure for being schematically illustrated in a receiving room 11 and low vacuum treatment chamber 18 in the structure of embodiment 1
Than the definition graph of the pressure state of the gas jet in the case of 30 times of PC less than.In Figure 11 and Figure 12, the oblique line of topmost
Part is equivalent to the forming region of the upper electrode 22 in aftermentioned embodiment 4.
As shown in figure 12, the pressure ratio PC of an above-mentioned pressure and secondary pressure is set to less than 30 times.
From the comparison of Fig. 7 and Figure 11 it is found that situation and feelings of the pressure ratio PC less than 30 times that pressure ratio PC is 30 times or more
Condition is compared, and the faster VELOCITY DISTRIBUTION of effluxvelocity is obtained, and reliably can have directive property to the supply of the surface of wafer 25
Gas.
(second segment limits effect caused by cylinder 14)
Figure 13 is to schematically illustrate to have used the pervious gas with the spray nozzle part being only made of first segment limitation cylinder 13
The definition graph of generation Mach dish structure in the case of feedway.
When the unstrpped gas G1 as supply gas limits cylinder 13 (aperture) via first segment, in receiving room 11
The ejection pressure of unstrpped gas G1 of the pressure higher than the secondary pressure of low vacuum treatment chamber 18, i.e. from first segment limitation cylinder 13
In the case that power is higher than in low vacuum treatment chamber 18, the air-flow that outlet (aperture exit) outflow of cylinder 13 is limited in first segment causes
The phenomenon that so-called shock wave cellular construction (shock cell), can periodically observe above-mentioned shock wave unit knot in downstream direction
Structure.Shock wave cellular construction refers to that aftermentioned reflected shock wave RS becomes next borderline region JB (Jet Boundary：
Jet boundary) and the shock wave structure that is repeatedly available.
The case where pressure on this aperture exit is more than the pressure in low vacuum treatment chamber 18 is called inadequate swollen
Swollen (under expansion), air-flow expand after flowing out aperture exit.
In the case where the pressure of aperture exit is further more than the pressure of low vacuum treatment chamber 18, there are no abundant for gas
Therefore expansion generates dilatational wave EW (Expansion Waves), gas substantially expands outward from the edge of aperture exit.
In the case that the Mach number of gas is larger, dilatational wave EW is reflected as compressional wave in borderline region JB (Jet Boundary),
And return to injection central shaft side.Further more, compressional wave refers to, pressure higher than benchmark and by when the point pressure rise
Wave, dilatational wave refer to, pressure less than benchmark and by when the wave that declines of the point pressure.
Like this, it in the case where the front and back pressure difference before and after spray nozzle part is larger, is formed by compressional wave and catch up with
The compressional wave of front forms the tubbiness shock wave BS (Barrel Shock) of wine barrel-shaped.When pressure difference further becomes larger, tubbiness swashs
Wave BS can not normally intersect in mandrel in the jet, formed in axisymmetric jet stream and be regarded as mach disk MD's (Mach shock wave)
Discoid perpendicular shock.Air-flow later becomes subcritical flow.Swash in addition, also reflection can be generated from one end of tubbiness shock wave BS
Wave RS (Reflection Shock).Further more, triple point TP is the tubbiness shock wave BS as compressional wave, mach disk MD, reflects and swash
The point of wave RS intersections.
On the other hand, as shown in figure 14, by being arranged in the gas jetting device 1 of embodiment 1 cylinder is limited with first segment
The 13 second segment limitation cylinders 14 being formed continuously, the side that extension wave EW limits cylinder 14 in second segment are reflected, and tubbiness swashs as a result,
Wave BS normal on mandrel XC in the jet can intersect, therefore, it is possible to avoid the generation of mach disk MD.
(invention effect etc.)
The gas jetting device 1 of the gas supply device of embodiment 1, can be by being set in spray nozzle part 10 and with straight
The first segment of the opening portion of diameter r1 limits cylinder 13, and the unstrpped gas G1 sprayed to low vacuum treatment chamber 18 is made to have directive property, because
This, can be using the ultrahigh speed more than Mach to 25 supply gas of wafer as process object substrate.At this moment, by being set to
The presence of second segment limitation cylinder 14 between one section of limitation cylinder 13 and low vacuum treatment chamber 18, can effectively inhibit due to adjoint
The surge and temperature of the unstrpped gas G1 gas ultrahigh speeds of ejection and the generation of this mach disk MD extremely slowed down.
As a result, the gas supply device of embodiment 1 can reach following effect：It can will be as unstrpped gas G1's
Such as reactant gas is supplied on wafer 25, enabling is realized by forming a film on the surface of the wafer 25 of high aspect ratio
The film forming of three-dimensional structure.
In addition, in the gas supply device of embodiment 1, by by a pressure in a receiving room 11 and low true
The pressure ratio PC of secondary pressure in empty processing chamber 18 is set as 30 times or more, can be to the wafer 25 as process object substrate
Supply the unstrpped gas G1 of fast state.
In addition, in the gas supply device of embodiment 1, the diameter r2 by the way that second segment to be limited to cylinder 14 is set as straight
Within diameter 30mm, it can more effectively inhibit mach disk MD.
In addition, it is expected that using following first method：In the gas supply port 12 for constituting gas jetting device 1, once storage
In room 11, first segment limitation cylinder 13 and second segment limitation cylinder 14.Using quartz or alumina material as constituent material come formed with
The region that unstrpped gas G1 is in contact i.e. gas contact region.
As unstrpped gas G1, usually using reactant gas.To use the gas of the embodiment 1 of first method
Body jetting device 1 at least forms the material of above-mentioned gas contact area using quartz or alumina material, due to quartz material face
Or aluminium oxide face is the substance of relatively above-mentioned reactant gas and chemical stabilization, therefore, it is possible to reactant gas with connect
Chemically reacted between tactile gas contact region it is less in the state of, the supply response gas into low vacuum treatment chamber 18.
Further, it is possible to reduce along with the chemical reaction between the reactant gas in gas jetting device 1, conduct
The generation of the corrosive substance of secondary product, as a result, pollutant is not contained in the reactant gas supplied, it can will be clean
Reactant gas be supplied in low vacuum treatment chamber 18 as unstrpped gas G1, produce the film for improving and being formed on wafer 25
At the effect of film quality.
In turn, it is expected that using following second method：When to 25 base feed gas G1 of wafer, by gas jetting device 1
100 DEG C or more are heated to, the unstrpped gas G1 after heating is supplied on wafer 25.Further more, as heat treatment, it may be considered that
Such as the structure that heating plate etc. heats mechanism etc. is set near gas jetting device 1.
In the gas supply device for using second method, pass through as reactant gas used in unstrpped gas G1
Heat treatment receives thermal energy, and the higher gas of reactivity can be used as to be supplied in low vacuum treatment chamber 18, and producing can higher
The effect that fast ground forms a film on wafer 25, to produce the effect that can carry out high speed film process.
In addition, it is expected that using following Third Way：The unstrpped gas G1 supplied from gas supply port 12 is at least to contain
The gas of nitrogen, oxygen, fluorine, hydrogen.
The unstrpped gas G1 supplied from gas supply port 12 is set as at least by the gas supply device for using Third Way
Therefore gas containing nitrogen, oxygen, fluorine, hydrogen is not only for forming the film forming of the insulating film of nitride film or oxidation film, can also use
In resist remove or in etching gas, as the crystalline substance of the high aspect ratio under the active gases of the fluorinated gas of purge gas
In the surface treatment of circle 25.In addition, by the way that the ultrahigh speed gas of hydroperoxyl radical gas etc. is sprayed onto on the surface of wafer 25, moreover it is possible to
It is enough other than insulating film formation, etching processing, cleaning function with supplying available unstrpped gas G1 on the way, therefore, it is possible to
Gas supply device is utilized in a variety of film process.
Above-mentioned Third Way can also be replaced, and use the unstrpped gas G1 supplied from gas supply port 12 for precursor gas
The fourth way of (precursor gas).
It is set as precursor gas (precursor gases) by the unstrpped gas G1 that will be supplied from gas supply port 12, can not only be used
The surface treatment gas of the wafer 25 of high aspect ratio as reactant gas, moreover it is possible to by it is needed for the film forming on wafer 25,
The surface that precursor gas when film forming as deposited metal raw material is supplied to wafer 25 forms a film.
It is expected that will constitute as follows as the 5th mode：It is provided with flow control portion, flow control portion control is supplied from gas
To the gas flow for the unstrpped gas G1 that mouth 12 supplies so that atmospheric pressure will be set as in low vacuum treatment chamber 18
(1013.25hPa) below and the pressure of 10kPa or more.Further more, may also take into following composition：As flow control portion, example
Gas flow control device (quality stream is set such as on the supply unit to the feed path between gas supply port 12 of unstrpped gas G1
Controller；MFC), gas flow control device is controlled etc..
The spray nozzle part 10 from gas jetting device 1 can be improved to from low vacuum by using the gas supply device of the 5th mode
The stability for managing the ultrahigh speed gas flow rate in the unstrpped gas G1 sprayed in chamber 18, can play the table for making film forming in wafer 25
Film forming thickness on face etc. homogenization etc., improve at film quality effect.
<Embodiment 2>
Fig. 2 is the definition graph of the structure for the gas supply device for showing embodiments of the present invention 2.XYZ is shown in Fig. 2
Orthogonal coordinate system.
As shown in the figure, the gas supply device of embodiment 2 is by loading the wafer 25 as process object substrate
Mounting table 19 (mounting portion) and gas jetting device 2 are constituted, and the gas jetting device 2 is set to the top of mounting table 19, from
To 25 supply gas of wafer in the low vacuum treatment chamber 18 of opening portion.
Gas jetting device 2 have a receiving room 11, gas supply port 12, first segment limitation cylinder 13 (first limitation cylinder),
Second segment limits cylinder 14 (the second limitation cylinder), third section limitation cylinder 15 (third limitation cylinder) and low vacuum treatment chamber 18 as master
Want constituting portion.
Also, the structure by including 3 limitation cylinder groups 13~15 forms spray nozzle part 20.That is, spray nozzle part 20 is arranged on
Between receiving room 11 and low vacuum treatment chamber 18.
The first segment limitation cylinder 13 for constituting spray nozzle part 20 is same as embodiment 1, and the opening portion cross sectional shape under overlooking is in
The circle of diameter r1 supplies downwards the unstrpped gas G1 of a receiving room 11.
Second segment limitation cylinder 14 is continuously formed with first segment limitation cylinder 13 along the Z direction, same as embodiment 1, is bowed
The circle of the opening portion cross sectional shape of bottom surface depending under diametrically r2, by from the unstrpped gas G1 that first segment limitation cylinder 13 supplies to
Lower section is supplied.
Third section limitation cylinder 15 along the Z direction with second segment limitation cylinder 14 be continuously formed, on X/Y plane (under vertical view
) the opening portion cross sectional shape of bottom surface be in (straight) diameter r3 (third diameter) circle, the original that cylinder 14 supply will be limited from second segment
The low vacuum treatment chambers 18 of material gas G1 downwards are supplied.It sets diameter r3 and meets " r3>r2”.
For example, limiting the diameter r1 of cylinder 13 setting first segment as diameter 1.35mm, depth 1mm, second segment limitation cylinder 14
Diameter r2 be diameter 8mm, in the case that depth is 4mm, set the diameter r3 of third section limitation cylinder 15 as diameter 20mm, depth
(the formation depth extended in z-direction) is 46mm, supplies such as nitrogen with flow 4slm, limits cylinder via first segment as a result,
13 unstrpped gas G1 becomes ultrahigh speed gas, and limits cylinder 14 and third section limitation cylinder 15 via second segment and be fed into low
In vacuum chamber 18.
Further more, the gas jetting device 1 of the other structures and embodiment 1 in gas jetting device 2 is same, therefore appropriate terrestrial reference
Note same symbol simultaneously omits the description.
In the gas jetting device 1 of the gas supply device of embodiment 2, by being respectively provided with diameter r1, diameter r2 and diameter
First segment limitation cylinder 13, second segment limitation cylinder 14 and the third section limitation cylinder 15 of the opening portion of r3 constitute spray nozzle part 20, thus, it is possible to
Enough make the unstrpped gas G1 sprayed to low vacuum treatment chamber 18 that there is directive property.At this moment, same as embodiment 1, pass through second
The presence of section limitation cylinder 14, can effectively inhibit mach disk MD phenomenons.
It is similarly imitated with the gas supply device of embodiment 1 in addition, the gas supply device of embodiment 2 is achieved
Fruit, and have the effect of in the case of using the first~the 5th mode.
In turn, the gas jetting device 2 of embodiment 2 is used as spray nozzle part 20 by the way that third section limitation cylinder 15 is further arranged,
And by third section limit cylinder 15 diameter r3 be set to than second segment limit cylinder 14 diameter r2 long, as a result, with embodiment 1
It compares, it can be in the state for the generation for further suppressing the mach disk MD caused by the high-speed jet that is generated by pressure ratio PC
Under, unstrpped gas G1 is supplied on wafer 25.
<Embodiment 3>
Fig. 3 is the definition graph of the structure for the gas supply device for showing embodiments of the present invention 3.XYZ is shown in Fig. 3
Orthogonal coordinate system.
As shown in the drawing, the gas supply device of embodiment 3 is by loading the load as the wafer 25 for dealing with objects substrate
It sets platform 19 (mounting portion) and gas jetting device 3 to constitute, the gas jetting device 3 is set to the top of mounting table 19, from opening
To 25 supply gas of wafer inside the low vacuum treatment chamber 18 of oral area.
Gas jetting device 3 have a receiving room 11, gas supply port 12, first segment limitation cylinder 13 (first limitation cylinder),
Hemispherical limitation cylinder 17 (the second limitation cylinder) and low vacuum treatment chamber 18 are as main composition portion.
Also, the structure by including 2 limitation cylinder groups 13 and 17 forms spray nozzle part 30.That is, spray nozzle part 30 is arranged on
Between receiving room 11 and low vacuum treatment chamber 18.
Constitute first segment limitation cylinder 13 (the first limitation cylinder), opening portion section shape same as embodiment 1 of spray nozzle part 30
The circle of shape diametrically r1, the unstrpped gas G1 of a receiving room 11 is supplied downwards.
Hemispherical limitation cylinder 17 is continuously formed with first segment limitation cylinder 13 along the Z direction, and the bottom surface on X/Y plane is opened
Oral area cross sectional shape is in the circle of (straight) diameter r2b (second diameter), by from first segment limit the unstrpped gas G1 that supplies of cylinder 13 to
The low vacuum treatment chamber 18 of lower section is supplied.About the diameter r2b of bottom surface, it is set as meeting " r2b>r1”.
Wherein, hemispherical limitation cylinder 17 is formed as top has the hemispherical of opening portion, the diameter r2 quilts of opening portion
It is set to (-Z direction) to become larger from top to bottom.That is, by the diameter r2 settings of the opening portion under the vertical view of hemispherical limitation cylinder 17
For：Diameter r2b from the diameter r2t (=diameter r1) of top to bottom surface is with downward and elongated.
Further more, the gas jetting device 1 of the other structures and embodiment 1 in gas jetting device 3 is same, therefore appropriate terrestrial reference
Note same symbol simultaneously omits the description.
In the gas jetting device 1 of the gas supply device of embodiment 3, by with diameter r1, diameter r2 (r2t~r2b)
Opening portion first segment limitation cylinder 13 and hemispherical limitation cylinder 17 composition spray nozzle part 30, thus enable that low vacuum treatment chamber
The 18 unstrpped gas G1 sprayed have directive property.At this moment, with embodiment 1 similarly, since the presence of hemispherical limitation cylinder 17, takes
Obtained the effect for inhibiting mach disk MD phenomenons.
It is similarly imitated with the gas supply device of embodiment 1 in addition, the gas supply device of embodiment 3 is achieved
Fruit, and have the effect of in the case of using the first~the 5th mode.
In addition, hemispherical limitation cylinder 17 (second limitation cylinder) in the gas jetting device 3 of embodiment 3 is so that opening portion
Diameter r2 towards the direction of low vacuum treatment chamber 18 (-Z direction) elongated mode with being formed as hemispherical, therefore, with implementation
Mode 1 is compared, can be in the production for further suppressing the mach disk MD caused by the high-speed jet that pressure ratio PC is generated
In the state of life, unstrpped gas G1 is supplied on wafer 25.
Further more, in the structure of the above embodiment 3, it, can also be in the lower section of hemispherical limitation cylinder 17 as variation
It is additionally provided with third section in the same manner as the third section of embodiment 2 limitation cylinder 15 and limits cylinder.Third section as embodiment 3 limits
The shape of cylinder processed, it may be considered that be the cylindrical shape etc. of diameter identical with the hemispherical limitation basal diameter r2b of cylinder 17.
<Embodiment 4>
Fig. 4 and Fig. 5 is the definition graph of the structure for the gas supply device for showing embodiments of the present invention 4.Fig. 4 is section view
Figure, Fig. 5 is stereogram.XYZ orthogonal coordinate system is respectively illustrated in Fig. 4 and Fig. 5.
As shown in these figures, the gas supply device of embodiment 4 is by loading the wafer 25 as process object substrate
Mounting table 19 (mounting portion) and gas jetting device 4 are constituted, and the gas jetting device 4 is placed in the top of mounting table 19, from opening
To 25 supply gas of wafer in the low vacuum treatment chamber 18 of oral area.
Gas jetting device 4 have a receiving room 11, gas supply port 12, first segment limitation cylinder 13X (the first limitation cylinder),
Second segment limits cylinder 14X (the second limitation cylinder), upper electrode 22, lower electrode 24 and low vacuum treatment chamber 18 and is used as main structure
At portion.
Also, the structure by including 2 limitation cylinder group 13X and 14X and lower electrode 24 forms spray nozzle part 40.That is,
Spray nozzle part 40 is arranged between a receiving room 11 and low vacuum treatment chamber 18.
There is dielectric upper electrode 22 and the lower electrodes 24 such as aluminium oxide on mutually opposed face, it is flat in XY respectively
To be round (under vertical view) on face, and it is set as facing each other.Further more, can also be configured to only in upper electrode 22 and lower electrode
There is dielectric in the opposed faces of the electrode of a side in 24.
That is, gas jetting device 4 has the upper electrode 22 for facing each other setting and (the first and second electricity of lower electrode 24
Pole), and discharge space is formed between upper electrode 22 and lower electrode 24, in upper electrode 22 and lower electrode 24 at least
One side has dielectric on the face for forming above-mentioned discharge space.
Specifically, the configuration of upper electrode 22 is near the bottom surface in a receiving room 11.On the other hand, lower electrode 24
In a manner of forming a part for bottom surface for a receiving room 11, configures under the bottom surface of a receiving room 11, be set to lower part
The openings at 24 center of electrode are formed as first segment limitation cylinder 13X.
The first segment limitation cylinder 13X (the first limitation cylinder) and the first segment of embodiment 1 for constituting spray nozzle part 40 limit cylinder 13
Equally, the circle of the diametrically r1 (first diameter) of (overlook under) opening portion cross sectional shape on X/Y plane, by a receiving room
11 unstrpped gas G1 is supplied downwards.
Second segment limits cylinder 14X along the Z direction in the underface of the lower electrode 24 including first segment limitation cylinder 13X
It is continuously formed, (overlook under) opening portion cross sectional shape X/Y plane on same as the second segment limitation cylinder 14 of embodiment 1
In the circle that (straight) diameter is r2 (second diameter), the unstrpped gas G1 come from the first segment limitation supply of cylinder 13 is supplied to lower section
Low vacuum treatment chamber 18.It sets diameter r2 and meets " r2>r1”.
In this wise, the gas jetting device 4 of embodiment 4 inside have gas ionization portion, the gas ionization portion via
Make in discharge space between the mutually opposed upper electrode 22 of dielectric and lower electrode 24 unstrpped gas G1 ionize, and make its from
Sonization or free radical.
Above-mentioned gas ionization part has between mutually opposed upper electrode 22 and lower electrode 24 with dielectric
Discharge space can apply alternating voltage between upper electrode 22 and lower electrode 24, make to generate dielectric resistance in discharge space
Gear electric discharge, to make unstrpped gas G1 ionize or free radical, and by obtained ionized gas or free radical gas
It is supplied in low vacuum treatment chamber 18 via second segment limitation cylinder 14X.
It is characterized in that, gas is arranged near borderline region like this between a receiving room 11 and spray nozzle part 40
Ionization part, the gas ionization portion are ionized by the unstrpped gas G1 for making to supply from gas supply port 12, obtain making unstrpped gas G1
Ionize ionized gas or free radical gas after either free radical.
Further more, the gas jetting device 1 of the other structures and embodiment 1 in gas jetting device 4 is same, therefore, suitably
Mark same symbol simultaneously omits the description.
In the gas jetting device 1 of the gas supply device of embodiment 4, by the opening with a diameter of r1 and a diameter of r2
The first segment limitation cylinder 13X and second segment limitation cylinder 14X in portion constitute spray nozzle part 40, thus enable that and are sprayed to low vacuum treatment chamber 18
The unstrpped gas G1 gone out has directive property.At this moment, same as embodiment 1, obtain the presence due to second segment limitation cylinder 14X and
It can inhibit this effect of mach disk MD phenomenons.
It is similarly imitated with the gas supply device of embodiment 1 in addition, the gas supply device of embodiment 4 is achieved
Fruit, and have the effect of in the case of using the first~the 5th mode.At this moment, as the second method of embodiment 4
Heat treatment can utilize the discharge treatment between upper electrode 22 and lower electrode 24.
In addition, the gas jetting device 4 of embodiment 4 can make gas by above-mentioned gas ionization part in gas jetting device 4
Body discharges, and can regard ionized gas or free radical gas as the ultrahigh speed Gas Jet with directive property, from it is low very
Empty processing chamber 18 directly abuts the surface of wafer 25.Therefore, it is filled with the plasma CVD in pervious film process device/ALD
It sets and compares, can abut to the active ionized gas of high electric field or free radical gas in the case of more high density
The surface of wafer 25 can realize the film process of higher quality, and having can easily perform to the higher wafer of aspect ratio 25
The effect of the film forming of progress or the film forming of three-dimensional structure.
In addition, the gas jetting device 4 of embodiment 4 is in internal above-mentioned gas ionization part, on mutually opposed top
Via dielectric formation discharge space between electrode 22 and lower electrode 24, applies between upper electrode 22 and lower electrode 24 and hand over
Galvanic electricity pressure makes dielectric barrier discharge generate in discharge space, so that unstrpped gas G1 is ionized or free radical, is capable of providing
Obtained ionized gas or free radical gas.At this moment, consider ionized gas, free radical gas service life very
It is short, in order to which generated ionized gas, free radical gas are abutted to process object substrate surface in a short time,
By the setting dielectric barrier discharge mechanism (upper electrode 22 and lower electrode 24) in gas jetting device 4, can obtain makes
The effect that high-quality film process are possibly realized is carried out using the ionized gas, the free radical gas that are supplied.
Specifically, first segment limitation cylinder 13X is configured to the openings being formed on lower electrode 24 (second electrode), lead to
It crosses and sprays discharge gas into low vacuum treatment chamber 18, can be within the very short millisecond short time below, it will be by dielectric
Ionized gas, the free radical gas of barrier discharge generation abut to the surface of wafer 25.To the gas of embodiment 4
In feedway, service life very short ionized gas, the free radical gas even generated by electric discharge can will also decay
It is suppressed to minimum limit and it is made to abut to the surface of wafer 25, the film forming under making it possible low temperature can be played or seek
Effect as the raising of film forming speed.
In addition, showing that the flat shape of upper electrode 22 and lower electrode 24 is circular in the above embodiment 4
Situation is not limited to the shape certainly.
<Embodiment 5>
Fig. 6 is the definition graph of the structure for the gas supply device for showing embodiments of the present invention 5.XYZ is shown in Fig. 6
Orthogonal coordinate system.
As shown in the drawing, the gas supply device of embodiment 5 is by loading the load as the wafer 25 for dealing with objects substrate
It sets platform 19 (mounting portion) and gas jetting device 100 is constituted, the gas jetting device 100 is set to the top of mounting table 19, from tool
Have in the low vacuum treatment chamber 18 of opening portion to 25 supply gas of wafer.
Gas jetting device 100 has a receiving room 110, gas supply port 12, first segment limitation cylinder 13a~13d (multiple
First limitation cylinder), second segment limitation cylinder 14a~14d (multiple second limitations cylinders) and low vacuum treatment chamber 180 be used as main structure
At portion.
Also, form spray by including the structure of first segment limitation cylinder 13a~13d and second segment limitation cylinder 14a~14d
Mouth 10a~10d.That is, spray nozzle part 10a~10d is arranged between a receiving room 110 and low vacuum treatment chamber 180.Nozzle
Portion 10a limits cylinder 13a by first segment and second segment limitation cylinder 14a is constituted, and spray nozzle part 10b limits cylinder 13b and second by first segment
Section limitation cylinder 14b is constituted, and spray nozzle part 10c limits cylinder 13c by first segment and second segment limitation cylinder 14c is constituted, and spray nozzle part 10d is by the
One section of limitation cylinder 13d and second segment limitation cylinder 14d are constituted.
It is same with the first segment of embodiment 1 limitation cylinder 13 respectively that first segment limits cylinder 13a~13d (multiple first limitation cylinders)
Sample, the circle of opening portion cross sectional shape under overlooking diametrically r1, the unstrpped gas G1 of a receiving room 110 is carried out downwards
Supply.
Second segment limits cylinder 14a~14d (the second limitation cylinder) and limits cylinder 13a~13d with first segment respectively along Z-direction
It is continuously formed, the circle of opening portion cross sectional shape overlook under diametrically r2 same as the second segment of embodiment 1 limitation cylinder 14
Shape supplies downwards the unstrpped gas G1 come respectively from first segment limitation cylinder 13a~13d supplies.After reaction
Gas is discharged from the exhaust outlet 210 being set between gas jetting device 100 and mounting table 19.
Further more, the gas jetting device 1 of the other structures and embodiment 1 in gas jetting device 100 is same, therefore suitably
Mark same symbol simultaneously omits the description.
The gas jetting device 1 of the gas supply device of embodiment 5 is due to being respectively provided with the first of diameter r1 and diameter r2
Section limitation cylinder 13a~13d and second segment limit cylinder 14a~14d and have spray nozzle part 10a~10d (multiple spray nozzle parts), as a result,
It can make the unstrpped gas G1 sprayed to low vacuum treatment chamber 180 that there is directive property.At this moment, same as embodiment 1, by the
The presence of two sections of limitation cylinder 14a~14d, achieves the effect that can effectively inhibit mach disk MD phenomenons.
It is similarly imitated with the gas supply device of embodiment 1 in addition, the gas supply device of embodiment 5 is achieved
Fruit, and have the effect of in the case of using the first~the 5th mode.
In addition, the gas jetting device 100 of embodiment 5 enables to spray from spray nozzle part 10a~10d (multiple spray nozzle parts)
The high-speed gas with directive property equably abut to the entire surface of wafer 25, to the big wafer 25 of aspect ratio carry out at
It, also can be in the shorter time when film, or in the film forming of the three-dimensional structure carried out on the surface of the wafer 25 of three-dimensional structure
Interior execution fine quality and uniform film process.
In addition it is also possible to using following 6th mode：The diameter r1 of first segment limitation cylinder 13a~13d is being set as diameter
When r1a~r1d, it is set as value different between diameter r1a~r1d.That is, can also use each spray nozzle part 10a~10d
Diameter r1 be set as the 6th mode of value different between spray nozzle part 10a~10d.
Use the gas supply device of the embodiment 5 of the 6th mode, can according between spray nozzle part 10a~10d not
Same content, controls the gas flow of ejection, gas velocity.Thus, for example, if with being connected on 25 surface of wafer
Position correspondingly, independent control is including ionized gas, free radical gas etc. between spray nozzle part 10a~10d
Unstrpped gas G1 injection gas flow, then will produce can homogeneous film formation in 25 surface of whole wafer etc., this be related into
The effect of the raising of film quality.
In addition it is also possible to using following 7th mode：The structure of each spray nozzle part 10a~10d is set to become and embodiment 4
40 identical structure of spray nozzle part, enabling control multiple gas of corresponding with spray nozzle part 10a~10d setting independently of each other
Volume ionization portion.
Due to can control independently of each other be correspondingly arranged with spray nozzle part 10a~10d (multiple spray nozzle parts) it is multiple
Therefore gas ionization portion is carried out by injection gas flow to multiple ionized gas, free radical gas and discharged power
Control can correspondingly control ionized gas, free radical gas with the position for for example abutting to 25 surface of wafer
The gas flow and discharged power of injection.As a result, produce can for the 7th mode in the gas supply device of embodiment 5
The effect for carrying out homogeneous film formation etc. in the entire surface of wafer 25, being related into film quality raising.
Further more, in the above embodiment 5, as the structure of each spray nozzle part 10a~10d, use and embodiment 1
10 same structure of spray nozzle part, but as the structure of each spray nozzle part 10a~10d, the spray with embodiment 2 can also be used
The 40 same structure of spray nozzle part of mouth 20, the spray nozzle part 30 of embodiment 3 or embodiment 4.
In the 6th mode of embodiment 5, by the diameter r1 of first segment limitation cylinder 13a~13d be set as diameter r1a~
When r1d, be set as value different between diameter r1a~r1d, but can also further by second segment limitation cylinder 14a~
When the diameter r2 of 14d is set as diameter r2a~r2d, it is set as value (first variation) different between diameter r2a~r2d.Add
It, further there is third section to limit cylinder 15 as Embodiment 2 in each spray nozzle part 10a~10d of embodiment 5
In the case of the structure of (15a~15d), can also by the diameter r3 of third section limitation cylinder 15a~15d be set as diameter r3a~
When r3d, it is set as value (the second variation) different between diameter r3a~r3d.
The gas supply device of the embodiment 5 of the first and second variations of the 6th mode is used, it can be in nozzle
Various control is carried out to the gas flow of ejection, gas velocity according to different contents between portion 10a~10d.In addition, by each spray
In the case that mouth 10a~10d is set as the structure of the spray nozzle part 30 of embodiment 3 or the spray nozzle part 40 of embodiment 4, also may be used
To use the above-mentioned first or second variation, the diameter r2 of hemispherical limitation cylinder 17 (is included into the third section limit of variation
The diameter of cylinder processed) or the diameter r2 etc. of second segment limitation cylinder 14X be set as value different between spray nozzle part 10a~10d.
<Other>
Further more, show that the number of limitation cylinder is most 3 sections of structures (embodiment 2) in the above-described embodiment, but
Certainly also it is conceivable that such as the third section of embodiment 2 limit cylinder 15 lower section further setting the 4th section limitation cylinder,
The structure of 4 sections or more of limitation cylinder is set.
It describes the invention in detail, but above-mentioned explanation is only to illustrate in terms of whole, the present invention does not limit
In the explanation.It is understood as expecting not illustrated infinite variety example without departing from the scope of the invention.
Symbol description
1~4,100 gas jetting devices
11,110 receiving rooms
12 gas supply ports
13,13a~13d, 13X first segments limit cylinder
14,14a~14d, 14X second segments limit cylinder
15 third sections limit cylinder
17 hemispherical limitation cylinders
18,180 low vacuum treatment chamber
19 mounting tables
22 upper electrodes
24 lower electrodes
25 wafers
Claims (15)
1. a kind of gas supply device, has：
Mounting portion (19), mounting process object substrate (25)；And
Gas jetting device (1~4,100), is set to the top of the mounting table, from bottom surface have opening portion processing chamber (18,
180) to process object substrate (25) supply gas,
The gas jetting device has：
Receiving room (11,110) temporarily stores the gas supplied from gas supply port (12)；
The processing chamber；And
Spray nozzle part (10,20,30,40,110) is arranged between a receiving room and the processing chamber,
The spray nozzle part has：
First limitation cylinder (13,13X) is formed to overlook lower opening portion cross sectional shape as the circle of first diameter, this first
Limitation cylinder is once stored described indoor gas and is supplied downwards；And
Second limitation cylinder (14,14X, 17) is formed the circle for overlooking lower opening portion cross sectional shape as second diameter, this
Two limitation cylinders supply the gas supplied from the first limitation cylinder towards the processing chamber,
It is authorized pressure ratio that the first diameter, which is set to make the pressure difference in a receiving room and in the processing chamber,
More than,
The second diameter is set to longer than the first diameter.
2. gas supply device according to claim 1, which is characterized in that
The authorized pressure ratio is 30 times,
By it is described first limit cylinder the first diameter be set as diameter 2mm hereinafter, will be formed depth be set as 2mm hereinafter,
It is 30 times or more to make the indoor pressure and the pressure difference of the pressure in the processing chamber of once storing.
3. the gas supply device according to claim 1 or claim 2, which is characterized in that
The second diameter for described second being limited cylinder is set as within diameter 30mm.
4. the gas supply device according to any one of claim 1 to claim 3, which is characterized in that
The spray nozzle part (30) further comprises that third limits cylinder (15), and third limitation cylinder (15) is formed opening under overlooking
Oral area cross sectional shape is the circle of third diameter, the gas supplied towards processing chamber supply from the second limitation cylinder,
The third diameter is longer than the second diameter.
5. the gas supply device according to any one of claim 1 to claim 3, which is characterized in that
The second limitation cylinder (17) in the spray nozzle part (40) is so that the second diameter more becomes closer to the processing chamber
Long mode is formed as hemispherical.
6. gas supply device according to any one of claims 1 to 5, which is characterized in that
Quartz or alumina material are formed in the gas jetting device as constituent material as the region being in contact with gas
Gas contact region.
7. the gas supply device according to any one of claim 1 to claim 6, which is characterized in that
By the way that the gas jetting device is heated to 100 DEG C or more, the gas after heating is supplied to the process object substrate.
8. the gas supply device according to any one of claim 1 to claim 7, which is characterized in that
The gas supplied from the gas supply port is at least gas containing nitrogen, oxygen, fluorine, hydrogen.
9. the gas supply device according to any one of claim 1 to claim 7, which is characterized in that
The gas supplied from the gas supply port is precursor gas.
10. the gas supply device according to any one of claim 1 to claim 9, which is characterized in that
The gas flow of gas to being supplied from the gas supply port controls so that sets the pressure in the processing chamber
It is set to atmospheric pressure or less and the pressure of 10kPa or more.
11. the gas supply device according to any one of claim 1 to claim 10, which is characterized in that
The spray nozzle part includes multiple nozzles.
12. gas supply device according to claim 11, which is characterized in that
The first diameter of the first limitation cylinder in each spray nozzle part of multiple spray nozzle parts is set as the multiple
Different value between spray nozzle part.
13. the gas supply device according to any one of claim 1 to claim 10, which is characterized in that
Gas ionization portion (22,24) is provided near borderline region between a receiving room and the spray nozzle part, it should
Gas ionization portion (22,24) makes to ionize from the gas ionization that the gas supply port supplies or free radical, obtains ion
Change gas or free radical gas.
14. gas supply device according to claim 13, which is characterized in that
The gas ionization portion has oppositely disposed first electrode and second electrode (22,24), in the first electrode
There is discharge space, at least one party in the first electrode and second electrode to be put described in formation between the second electrode
There is dielectric on the face in electric space,
The first limitation cylinder is formed using the openings formed in the second electrode,
Apply alternating voltage between the first electrode and second electrode, dielectric barrier will be generated in the discharge space and put
The ionized gas obtained from electricity or the free radical gas are supplied into the processing chamber.
15. according to the gas supply device described in claim 13 or claim 14, which is characterized in that
The spray nozzle part includes multiple nozzles,
The gas ionization portion includes the multiple gas ionization portions being correspondingly arranged with the multiple spray nozzle part, can mutually solely
The multiple gas ionization portion of Site control.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2016/050188 WO2017119074A1 (en) | 2016-01-06 | 2016-01-06 | Gas supply device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108292603A true CN108292603A (en) | 2018-07-17 |
| CN108292603B CN108292603B (en) | 2022-06-28 |
Family
ID=59273406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680068427.2A Active CN108292603B (en) | 2016-01-06 | 2016-01-06 | Gas supply device |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20190055648A1 (en) |
| EP (1) | EP3401949B1 (en) |
| JP (1) | JP6430664B2 (en) |
| KR (1) | KR102112432B1 (en) |
| CN (1) | CN108292603B (en) |
| TW (1) | TWI600791B (en) |
| WO (1) | WO2017119074A1 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019108855A1 (en) * | 2017-11-30 | 2019-06-06 | Corning Incorporated | Atmospheric pressure linear rf plasma source for surface modification and treatment |
| WO2019138453A1 (en) * | 2018-01-10 | 2019-07-18 | 東芝三菱電機産業システム株式会社 | Active gas generation device and film formation processing device |
| JP7038618B2 (en) * | 2018-07-12 | 2022-03-18 | 東京エレクトロン株式会社 | Cleaning method and substrate processing equipment |
| JP6725605B2 (en) * | 2018-08-24 | 2020-07-22 | ファナック株式会社 | Laser processing system and laser processing method |
| JP6873588B1 (en) | 2019-11-12 | 2021-05-19 | 東芝三菱電機産業システム株式会社 | Inert gas generator |
| JP6858477B1 (en) * | 2019-11-27 | 2021-04-14 | 東芝三菱電機産業システム株式会社 | Inert gas generator |
| US20210355580A1 (en) * | 2020-05-13 | 2021-11-18 | Tokyo Electron Limited | Systems and Methods for Depositing a Layer on a Substrate Using Atomic Oxygen |
| CN112376029B (en) * | 2020-11-11 | 2022-10-21 | 北京北方华创微电子装备有限公司 | Plasma immersion ion implantation apparatus |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR910006706A (en) * | 1989-09-29 | 1991-04-29 | 나까무라 유우이찌 | Multi-pipe Sorting Dilution Tunnel Device |
| JP2000038903A (en) * | 1998-05-18 | 2000-02-08 | Hiroyasu Tanigawa | Steam gas turbine integrated engine having controller |
| US20030019580A1 (en) * | 2000-03-30 | 2003-01-30 | Strang Eric J. | Method of and apparatus for tunable gas injection in a plasma processing system |
| CN101688297A (en) * | 2007-06-07 | 2010-03-31 | 应用材料股份有限公司 | Equipment for depositing uniform silicon thin film and its manufacturing method |
| CN102470312A (en) * | 2009-09-30 | 2012-05-23 | 三菱重工业株式会社 | Soot and dust removal apparatus |
| US20120247673A1 (en) * | 2011-03-31 | 2012-10-04 | Tokyo Electron Limited | Electrode having gas discharge function and plasma processing apparatus |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6369538A (en) * | 1986-09-09 | 1988-03-29 | Canon Inc | reactor |
| JPH05283372A (en) * | 1992-04-01 | 1993-10-29 | Nissin Electric Co Ltd | Etching device |
| JPH1027778A (en) * | 1996-07-09 | 1998-01-27 | Komatsu Ltd | Surface treatment device and nozzle used for the same |
| JP3710587B2 (en) * | 1997-02-17 | 2005-10-26 | 株式会社荏原製作所 | Gas injection head |
| JPH11293469A (en) * | 1998-04-13 | 1999-10-26 | Komatsu Ltd | Surface treatment device and surface treatment method |
| ATE420454T1 (en) * | 1999-08-17 | 2009-01-15 | Tokyo Electron Ltd | PULSED PLASMA TREATMENT METHOD AND APPARATUS |
| JP3366301B2 (en) | 1999-11-10 | 2003-01-14 | 日本電気株式会社 | Plasma CVD equipment |
| WO2002071463A1 (en) * | 2001-03-02 | 2002-09-12 | Tokyo Electron Limited | Shower head gas injection apparatus with secondary high pressure pulsed gas injection |
| JP2003324072A (en) * | 2002-05-07 | 2003-11-14 | Nec Electronics Corp | Semiconductor manufacturing equipment |
| JP3594947B2 (en) | 2002-09-19 | 2004-12-02 | 東京エレクトロン株式会社 | Method for forming insulating film, method for manufacturing semiconductor device, substrate processing apparatus |
| KR100628888B1 (en) * | 2004-12-27 | 2006-09-26 | 삼성전자주식회사 | Shower head thermostat and film forming apparatus having the same |
| JP2009016782A (en) | 2007-06-04 | 2009-01-22 | Tokyo Electron Ltd | Film forming method and film forming apparatus |
| TWI437120B (en) * | 2011-07-08 | 2014-05-11 | Roth & Rau Ag | Parallel plate reactor for uniform thin film deposition with reduced tool foot-print |
| JP5848140B2 (en) * | 2012-01-20 | 2016-01-27 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP6140412B2 (en) * | 2012-09-21 | 2017-05-31 | 東京エレクトロン株式会社 | Gas supply method and plasma processing apparatus |
| US9132436B2 (en) * | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| JP5543567B2 (en) | 2012-10-22 | 2014-07-09 | 誠 雫石 | Manufacturing method of semiconductor device |
| TW201435138A (en) * | 2012-12-21 | 2014-09-16 | Applied Materials Inc | Apparatus and methods for symmetrical gas distribution with high purge efficiency |
| JP6219179B2 (en) * | 2014-01-20 | 2017-10-25 | 東京エレクトロン株式会社 | Plasma processing equipment |
| US10487399B2 (en) * | 2014-06-26 | 2019-11-26 | Applied Materials, Inc. | Atomic layer deposition chamber with counter-flow multi inject |
| JP6001015B2 (en) | 2014-07-04 | 2016-10-05 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, program, and recording medium |
| US10407771B2 (en) | 2014-10-06 | 2019-09-10 | Applied Materials, Inc. | Atomic layer deposition chamber with thermal lid |
| US10403474B2 (en) | 2016-07-11 | 2019-09-03 | Lam Research Corporation | Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system |
-
2016
- 2016-01-06 EP EP16883579.1A patent/EP3401949B1/en active Active
- 2016-01-06 CN CN201680068427.2A patent/CN108292603B/en active Active
- 2016-01-06 JP JP2017559971A patent/JP6430664B2/en active Active
- 2016-01-06 US US15/767,262 patent/US20190055648A1/en not_active Abandoned
- 2016-01-06 KR KR1020187015815A patent/KR102112432B1/en active Active
- 2016-01-06 WO PCT/JP2016/050188 patent/WO2017119074A1/en not_active Ceased
- 2016-06-24 TW TW105119921A patent/TWI600791B/en active
-
2020
- 2020-06-01 US US16/888,898 patent/US11453945B2/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR910006706A (en) * | 1989-09-29 | 1991-04-29 | 나까무라 유우이찌 | Multi-pipe Sorting Dilution Tunnel Device |
| JP2000038903A (en) * | 1998-05-18 | 2000-02-08 | Hiroyasu Tanigawa | Steam gas turbine integrated engine having controller |
| US20030019580A1 (en) * | 2000-03-30 | 2003-01-30 | Strang Eric J. | Method of and apparatus for tunable gas injection in a plasma processing system |
| CN101688297A (en) * | 2007-06-07 | 2010-03-31 | 应用材料股份有限公司 | Equipment for depositing uniform silicon thin film and its manufacturing method |
| CN102470312A (en) * | 2009-09-30 | 2012-05-23 | 三菱重工业株式会社 | Soot and dust removal apparatus |
| US20120137890A1 (en) * | 2009-09-30 | 2012-06-07 | Yoshinori Koyama | Dust-removing apparatus |
| US20120247673A1 (en) * | 2011-03-31 | 2012-10-04 | Tokyo Electron Limited | Electrode having gas discharge function and plasma processing apparatus |
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| Publication number | Publication date |
|---|---|
| US20190055648A1 (en) | 2019-02-21 |
| EP3401949A4 (en) | 2019-08-21 |
| US20200291515A1 (en) | 2020-09-17 |
| TW201725277A (en) | 2017-07-16 |
| EP3401949B1 (en) | 2021-03-24 |
| WO2017119074A1 (en) | 2017-07-13 |
| EP3401949A1 (en) | 2018-11-14 |
| JPWO2017119074A1 (en) | 2018-04-26 |
| KR102112432B1 (en) | 2020-05-18 |
| KR20180077274A (en) | 2018-07-06 |
| US11453945B2 (en) | 2022-09-27 |
| CN108292603B (en) | 2022-06-28 |
| JP6430664B2 (en) | 2018-11-28 |
| TWI600791B (en) | 2017-10-01 |
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