CN108037146A - Based on the transmission electron microscope sample preparation method non-precisely positioned - Google Patents
Based on the transmission electron microscope sample preparation method non-precisely positioned Download PDFInfo
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Abstract
本发明公开了一种基于非精确定位的透射电镜样品制备方法，属于半导体技术领域。所述方法包括：提供失效分析芯片，对失效分析芯片中的失效点进行定位并标记得到标记区域；在标记区域的一侧切割第一楔形空洞，并对第一楔形空洞中靠近标记区域的截面进行减薄直至观察到失效点；在观察到失效点的截面上形成保护层；在标记区域的另一侧切割第二楔形空洞，并对第二楔形空洞中靠近标记区域的截面进行减薄直至得到预设厚度的初样；对初样的底部进行U形切断后进行减薄，得到透射电镜样品。本发明中的方法，能够有效的避免失效点的误切，以及已切到失效点的一面在后续工艺中被损伤或者溅脏，从而提高了制样成功率，改善了观察结果。
The invention discloses a transmission electron microscope sample preparation method based on inaccurate positioning, which belongs to the technical field of semiconductors. The method includes: providing a failure analysis chip, locating and marking a failure point in the failure analysis chip to obtain a marked area; cutting a first wedge-shaped cavity on one side of the marked area, and cutting a section of the first wedge-shaped cavity close to the marked area Thinning is performed until the point of failure is observed; a protective layer is formed on the section where the point of failure is observed; a second wedge-shaped cavity is cut on the other side of the marked area, and the section of the second wedge-shaped cavity close to the marked area is thinned until Obtain an initial sample with a preset thickness; cut the bottom of the initial sample in a U-shape and then thin it to obtain a transmission electron microscope sample. The method of the present invention can effectively avoid miscutting of the failure point, and the side that has been cut to the failure point is damaged or splashed in the subsequent process, thereby increasing the success rate of sample preparation and improving the observation result.
Description
技术领域technical field
本发明涉及半导体技术领域，尤其涉及一种基于非精确定位的透射电镜样品制备方法。The invention relates to the technical field of semiconductors, in particular to a sample preparation method for a transmission electron microscope based on inaccurate positioning.
背景技术Background technique
集成电路在研制、生产和使用过程中失效不可避免，随着人们对产品质量和可靠性要求的不断提高，失效分析工作也显得越来越重要。通过芯片失效分析，可以帮助集成电路设计人员找到设计上的缺陷、工艺参数的不匹配或者设计与操作中的不当等问题；同时失效分析是确定失效机理的必要手段，能够为有效的故障诊断提供必要的信息，为设计工程师不断改进或者修复芯片的设计，使之与设计规范更加吻合提供必要的反馈；失效分析还可以评估不同测试向量的有效性，为生产测试提供必要的补充，为验证测试流程优化提供必要的信息基础。The failure of integrated circuits is inevitable in the process of development, production and use. With the continuous improvement of people's requirements for product quality and reliability, failure analysis is becoming more and more important. Chip failure analysis can help IC designers find design defects, mismatch of process parameters, or improper design and operation; at the same time, failure analysis is a necessary means to determine the failure mechanism and can provide effective fault diagnosis. Necessary information provides necessary feedback for design engineers to continuously improve or repair chip design to make it more consistent with design specifications; failure analysis can also evaluate the effectiveness of different test vectors, provide necessary supplements for production testing, and provide necessary feedback for verification testing Process optimization provides the necessary information base.
目前的失效分析流程，通常在对失效点(或者称为缺陷、或者称为地址)进行精确定位后，使用聚焦离子束(Focused Ion beam，FIB)显微镜将失效点制备成厚度为100纳米的样品，再使用透射电镜对样品进行结构分析，最终确定失效模型。而对于不能实现精确定位失效点(缺陷)的失效分析类型来说，则需要使用聚焦离子束显微镜对样品进行边切割边观察，而在此过程中，通常会存在样品的一侧已经切到失效点，而另一侧却留有较厚的残留的情况，此时需要大电流离子束进行减薄，那么已经到达失效点的一侧则会被离子束损伤或者溅脏，从而影响后续透射电子显微镜(Transmission Electron Microscope,TEM)对失效点的观察和分析。同时，还存在由于失效点定位精度不够，而进行误切的风险。In the current failure analysis process, usually after the failure point (or defect, or address) is precisely positioned, the failure point is prepared into a sample with a thickness of 100 nanometers using a focused ion beam (Focused Ion beam, FIB) microscope , and then use the transmission electron microscope to analyze the structure of the sample, and finally determine the failure model. For the type of failure analysis that cannot accurately locate the failure point (defect), it is necessary to use a focused ion beam microscope to observe the sample while cutting, and in this process, there is usually one side of the sample that has been cut to failure point, but there is a thicker residue on the other side. At this time, a high-current ion beam is required to thin it, and the side that has reached the failure point will be damaged or sputtered by the ion beam, which will affect the subsequent transmission of electrons. Microscope (Transmission Electron Microscope, TEM) observation and analysis of failure points. At the same time, there is also the risk of miscutting due to insufficient positioning accuracy of the failure point.
发明内容Contents of the invention
根据本发明的实施方式，提供一种基于非精确定位的透射电镜样品制备方法，包括：According to an embodiment of the present invention, a method for preparing a transmission electron microscope sample based on non-precise positioning is provided, including:
提供失效分析芯片，对所述失效分析芯片中的失效点进行定位并标记得到标记区域；Provide a failure analysis chip, locate and mark the failure point in the failure analysis chip to obtain a marked area;
在所述标记区域的一侧切割第一楔形空洞，并对所述第一楔形空洞中靠近所述标记区域的截面进行减薄直至观察到失效点；cutting a first wedge-shaped cavity on one side of the marked area, and thinning a section of the first wedge-shaped cavity close to the marked area until a failure point is observed;
在观察到失效点的截面上形成保护层；Formation of a protective layer over the section where the point of failure is observed;
在所述标记区域的另一侧切割第二楔形空洞，并对所述第二楔形空洞中靠近所述标记区域的截面进行减薄直至得到预设厚度的初样；Cutting a second wedge-shaped cavity on the other side of the marked area, and thinning the section of the second wedge-shaped cavity close to the marked area until a preliminary sample with a preset thickness is obtained;
对所述初样的底部进行U形切断后进行减薄，得到透射电镜样品。The bottom of the original sample was cut in a U-shape and then thinned to obtain a transmission electron microscope sample.
可选地，使用微光显微镜对所述失效分析芯片中的失效点进行定位，使用激光打标机对定位的失效点进行标记得到标记区域。Optionally, use a low-light microscope to locate the failure point in the failure analysis chip, and use a laser marking machine to mark the located failure point to obtain a marked area.
可选地，在聚焦离子束机台中选择楔形图形，并使用聚焦离子束在所述标记区域的一侧切割第一楔形空洞；Optionally, select a wedge-shaped pattern in the focused ion beam machine, and use the focused ion beam to cut a first wedge-shaped hole on one side of the marking area;
可选地，在聚焦离子束机台中选择所述楔形图形，并使用聚焦离子束在所述标记区域的另一侧切割第二楔形空洞。Optionally, the wedge-shaped pattern is selected in a focused ion beam machine, and a second wedge-shaped hole is cut on the other side of the marked area by using a focused ion beam.
可选地，在聚焦离子束机台中选择矩形图形，并使用聚焦离子束对所述第一楔形空洞中靠近所述标记区域的截面进行减薄直至观察到失效点；Optionally, select a rectangular pattern in the focused ion beam machine, and use a focused ion beam to thin the section of the first wedge-shaped cavity close to the marking area until a failure point is observed;
可选地，在聚焦离子束机台中选择所述矩形图形，并使用聚焦离子束对所述第二楔形空洞中靠近所述标记区域的截面进行减薄直至得到预设厚度的初样。Optionally, the rectangular pattern is selected in a focused ion beam machine, and a focused ion beam is used to thin the section of the second wedge-shaped cavity close to the marking area until a preliminary sample with a preset thickness is obtained.
可选地，所述标记区域的一侧与所述标记区域的另一侧为相对的两侧。Optionally, one side of the marking area and the other side of the marking area are two opposite sides.
可选地，使用聚焦离子束电镜内集成的沉积探针，在观察到失效点的截面上沉积与所述截面不同的物质形成保护层。Optionally, using a deposition probe integrated in the focused ion beam electron microscope, a substance different from the cross section where the failure point is observed is deposited to form a protective layer.
可选地，在观察到失效点的截面上形成保护层之前，还包括：将所述失效分析芯片的倾斜度归零，并旋转180度。Optionally, before the protective layer is formed on the section where the failure point is observed, the method further includes: returning the slope of the failure analysis chip to zero and rotating it by 180 degrees.
可选地，所述对所述第二楔形空洞中靠近所述标记区域的截面进行减薄直至得到预设厚度的初样，具体为：对所述第二楔形空洞中靠近所述标记区域的截面进行减薄直至得到2微米厚度的初样。Optionally, the thinning of the cross-section of the second wedge-shaped cavity close to the marked area until the initial sample with a preset thickness is obtained, specifically: the cross-section of the second wedge-shaped cavity close to the marked area The section was thinned until a 2 micron thick prototype was obtained.
可选地，对所述初样的底部进行U形切断后，对所述初样含有保护层的一侧及不含保护层的另一侧进行减薄，得到透射电镜样品。Optionally, after U-shaped cutting is performed on the bottom of the preliminary sample, the side containing the protective layer and the other side not containing the protective layer are thinned to obtain a transmission electron microscope sample.
本发明的优点在于：The advantages of the present invention are:
本发明中的方法，在失效点定位精度不足的情况下，可以快速的定位到失效点，有效的避免了失效点误切现象的发生；并通过在能够观察到失效点的截面上形成保护层，对于样品的一侧已经切到失效点而另一侧还有大量残留的情况，以及在样品底部进行U形切断过程中，均能够有效的避免样品已切到失效点的一侧被聚焦离子束损伤或者溅脏，从而提高了制样成功率，改善了观察结果。The method in the present invention can quickly locate the failure point in the case of insufficient positioning accuracy of the failure point, effectively avoiding the occurrence of miscutting of the failure point; and by forming a protective layer on the section where the failure point can be observed , for the situation that one side of the sample has been cut to the failure point and there is a large amount of residue on the other side, and during the U-shaped cutting process at the bottom of the sample, it can effectively prevent the side of the sample that has been cut to the failure point from being focused on the ions Beam damage or splashing, thereby increasing the success rate of sample preparation and improving observation results.
附图说明Description of drawings
通过阅读下文优选实施方式的详细描述，各种其他的优点和益处对于本领域普通技术人员将变得清楚明了。附图仅用于示出优选实施方式的目的，而并不认为是对本发明的限制。而且在整个附图中，用相同的参考符号表示相同的部件。在附图中：Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiment. The drawings are only for the purpose of illustrating a preferred embodiment and are not to be considered as limiting the invention. Also throughout the drawings, the same reference numerals are used to designate the same components. In the attached picture:
附图1为本发明提供的一种基于非精确定位的透射电镜样品制备方法流程图；Accompanying drawing 1 is a kind of flow chart of the transmission electron microscope sample preparation method based on inaccurate positioning provided by the present invention;
附图2为本发明提供的失效分析芯片的结构版图；Accompanying drawing 2 is the structural layout of the failure analysis chip provided by the present invention;
附图3至附图11为本发明提供的一种基于非精确定位的透射电镜样品制备方法中的结构变化示意图。Figures 3 to 11 are schematic diagrams of structural changes in a non-precise positioning-based transmission electron microscope sample preparation method provided by the present invention.
具体实施方式Detailed ways
下面将参照附图更详细地描述本公开的示例性实施方式。虽然附图中显示了本公开的示例性实施方式，然而应当理解，可以以各种形式实现本公开而不应被这里阐述的实施方式所限制。相反，提供这些实施方式是为了能够更透彻地理解本公开，并且能够将本公开的范围完整的传达给本领域的技术人员。Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.
根据本发明的实施方式，提供一种基于非精确定位的透射电镜样品制备方法，如图1所示，包括：According to an embodiment of the present invention, a method for preparing a sample for transmission electron microscopy based on inaccurate positioning is provided, as shown in FIG. 1 , including:
提供失效分析芯片，对失效分析芯片中的失效点进行定位并标记得到标记区域；Provide a failure analysis chip, locate and mark the failure point in the failure analysis chip to obtain the marked area;
在标记区域的一侧切割第一楔形空洞，并对第一楔形空洞中靠近标记区域的截面进行减薄直至观察到失效点；cutting a first wedge-shaped cavity on one side of the marked area, and thinning the section of the first wedge-shaped cavity close to the marked area until the point of failure is observed;
在观察到失效点的截面上形成保护层；Formation of a protective layer over the section where the point of failure is observed;
在标记区域的另一侧切割第二楔形空洞，并对第二楔形空洞中靠近标记区域的截面进行减薄直至得到预设厚度的初样；Cutting a second wedge-shaped cavity on the other side of the marked area, and thinning the section of the second wedge-shaped cavity close to the marked area until a preliminary sample with a preset thickness is obtained;
对初样的底部进行U形切断后进行减薄，得到透射电镜样品。The bottom of the initial sample was cut in a U shape and then thinned to obtain a transmission electron microscope sample.
根据本发明的实施方式，提供的失效分析芯片，如图2所示，包括：单元区(CellArea)、译码区(Decoder Area)、页缓存区(Page Buffer Area)、外围&垫区(Periphery&PadArea)。According to an embodiment of the present invention, the failure analysis chip provided, as shown in Figure 2, includes: CellArea, Decoder Area, Page Buffer Area, Periphery & Pad Area ).
根据本发明的实施方式，使用微光显微镜对失效分析芯片中的失效点进行定位，使用激光打标机对定位的失效点进行标记得到标记区域；其中，标记区域的结构示意如图3所示。According to the embodiment of the present invention, the failure point in the failure analysis chip is positioned using a low-light microscope, and a laser marking machine is used to mark the positioned failure point to obtain a marked area; wherein, the structure of the marked area is shown in Figure 3 .
需要说明地，本发明中，在图4至图11中，仅示意出图3中虚线框内的区域。It should be noted that, in the present invention, in FIG. 4 to FIG. 11 , only the area within the dashed box in FIG. 3 is schematically shown.
根据本发明的实施方式，如图4和图5所示，在聚焦离子束机台中选择楔形图形，并使用聚焦离子束在标记区域的一侧切割第一楔形空洞；在聚焦离子束机台中选择矩形图形，并使用聚焦离子束对第一楔形空洞中靠近标记区域的截面进行减薄直至观察到失效点。According to the embodiment of the present invention, as shown in Fig. 4 and Fig. 5, select the wedge-shaped pattern in the focused ion beam machine, and use the focused ion beam to cut the first wedge-shaped hole on one side of the marking area; select in the focused ion beam machine Rectangular pattern, and use a focused ion beam to thin the section of the first wedge-shaped cavity close to the marked area until the point of failure is observed.
其中，楔形图形具体为Rectangle图形，矩形图形具体为Cleaning图形。Wherein, the wedge-shaped figure is specifically a Rectangle figure, and the rectangle figure is specifically a Cleaning figure.
根据本发明的实施方式，如图6所示，使用聚焦离子束电镜内集成的沉积探针，在观察到失效点的截面上沉积与截面不同的物质形成保护层。According to an embodiment of the present invention, as shown in FIG. 6 , a deposition probe integrated in a focused ion beam electron microscope is used to deposit a material different from the cross-section on the cross-section where the failure point is observed to form a protective layer.
优选地，在本实施例中，使用聚焦离子束电镜内集成的沉积探针，在观察到失效点的截面上沉积碳形成保护层；Preferably, in this embodiment, use the deposition probe integrated in the focused ion beam electron microscope to deposit carbon on the section where the failure point is observed to form a protective layer;
需要指出地，在某些实施例中，当截面的构成成分中氧化物不构成判断影响时，还可以使用聚焦离子束电镜内集成的沉积探针，在观察到失效点的截面上沉积氧化物形成保护层。It should be pointed out that in some embodiments, when the oxide in the composition of the section does not constitute an influence on the judgment, the deposition probe integrated in the focused ion beam electron microscope can also be used to deposit the oxide on the section where the failure point is observed Form a protective layer.
本发明中，通过在观察到失效点的截面上形成保护层，对于样品的一侧已经切到失效点而另一侧还有大量残留的情况，以及在样品底部进行U形切断过程中，均能够有效的避免样品已切到失效点的一侧被聚焦离子束损伤或者溅脏，进而提高了制样成功率，并改善了观察结果。In the present invention, by forming a protective layer on the section where the failure point is observed, the failure point has been cut to the failure point on one side of the sample and there is a large amount of residue on the other side, as well as the U-shaped cutting process at the bottom of the sample. It can effectively prevent the side of the sample that has been cut to the failure point from being damaged or splashed by the focused ion beam, thereby increasing the success rate of sample preparation and improving the observation results.
根据本发明的实施方式，在观察到失效点的截面上形成保护层之前，还包括：将失效分析芯片的倾斜度归零，并旋转180度。According to an embodiment of the present invention, before the protective layer is formed on the section where the failure point is observed, the method further includes: returning the inclination of the failure analysis chip to zero and rotating it by 180 degrees.
在本实施例中，由于聚焦离子束机台的特殊设计，在使用聚焦离子束电镜内集成的沉积探针在观察到失效点的截面上沉积保护层之前，需要将失效分析芯片的倾斜度归零，并旋转180度，以清楚的看到所述截面。In this embodiment, due to the special design of the focused ion beam machine, it is necessary to normalize the slope of the failure analysis chip to zero, and rotated 180 degrees to clearly see the section.
根据本发明的实施方式，如图7所示，所述标记区域的一侧与所述标记区域的另一侧为相对的两侧。According to an embodiment of the present invention, as shown in FIG. 7 , one side of the marking area and the other side of the marking area are two opposite sides.
根据本发明的实施方式，如图7和图8所示，在聚焦离子束机台中选择楔形图形，并使用聚焦离子束在标记区域的另一侧切割第二楔形空洞；在聚焦离子束机台中选择矩形图形，并使用聚焦离子束对第二楔形空洞中靠近标记区域的截面进行减薄直至得到预设厚度的初样。According to the embodiment of the present invention, as shown in Fig. 7 and Fig. 8, select the wedge-shaped pattern in the focused ion beam machine, and use the focused ion beam to cut the second wedge-shaped hole on the other side of the marking area; in the focused ion beam machine Select a rectangular pattern, and use the focused ion beam to thin the section of the second wedge-shaped cavity close to the marked area until the initial sample with a preset thickness is obtained.
其中，楔形图形具体为Rectangle图形，矩形图形具体为Cleaning图形。Wherein, the wedge-shaped figure is specifically a Rectangle figure, and the rectangle figure is specifically a Cleaning figure.
根据本发明的实施方式，对第二楔形空洞中靠近标记区域的截面进行减薄直至得到预设厚度的初样，具体为：对第二楔形空洞中靠近标记区域的截面进行减薄直至得到2微米厚度的初样。According to an embodiment of the present invention, thinning the section near the marked area in the second wedge-shaped cavity until the initial sample with a preset thickness is obtained, specifically: thinning the section near the marked area in the second wedge-shaped cavity until 2 Initial samples of micron thickness.
根据本发明的实施方式，通过聚焦离子束对初样的底部进行U形切断，即对初样进行底部的分离，其结构示意如图9所示。According to the embodiment of the present invention, the U-shaped cutting is performed on the bottom of the initial sample by the focused ion beam, that is, the bottom of the initial sample is separated, and its structure is shown in FIG. 9 .
根据本发明的实施方式，对初样的底部进行U形切断后，对初样含有保护层的一侧及不含保护层的另一侧进行减薄，得到透射电镜样品。According to an embodiment of the present invention, after U-shaped cutting is performed on the bottom of the original sample, the side of the original sample containing the protective layer and the other side not containing the protective layer are thinned to obtain a transmission electron microscope sample.
具体地，如图10和图11所示，对初样含有保护层的一侧进行减薄以去除保护层后，对初样的另一侧进行减薄直至得到利于观察和分析的透射电镜样品。Specifically, as shown in Figures 10 and 11, after thinning the side of the original sample containing the protective layer to remove the protective layer, the other side of the original sample is thinned until a transmission electron microscope sample that is convenient for observation and analysis is obtained. .
本发明中的方法，在失效点定位精度不足的情况下，可以快速的定位到失效点，有效的避免了失效点误切现象的发生；并通过在能够观察到失效点的截面上形成保护层，对于样品的一侧已经切到失效点而另一侧还有大量残留的情况，以及在样品底部进行U形切断过程中，均能够有效的避免样品已切到失效点的一侧被聚焦离子束损伤或者溅脏，从而提高了制样成功率，改善了观察结果。The method in the present invention can quickly locate the failure point in the case of insufficient positioning accuracy of the failure point, effectively avoiding the occurrence of miscutting of the failure point; and by forming a protective layer on the section where the failure point can be observed , for the situation that one side of the sample has been cut to the failure point and there is a large amount of residue on the other side, and during the U-shaped cutting process at the bottom of the sample, it can effectively prevent the side of the sample that has been cut to the failure point from being focused on the ions Beam damage or splashing, thereby increasing the success rate of sample preparation and improving observation results.
以上所述，仅为本发明较佳的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。The above is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed in the present invention can easily think of changes or Replacement should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be determined by the protection scope of the claims.
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