CN107881555A - The processing unit (plant) and processing technology of a kind of semi-conducting material - Google Patents
The processing unit (plant) and processing technology of a kind of semi-conducting material Download PDFInfo
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- CN107881555A CN107881555A CN201711004013.6A CN201711004013A CN107881555A CN 107881555 A CN107881555 A CN 107881555A CN 201711004013 A CN201711004013 A CN 201711004013A CN 107881555 A CN107881555 A CN 107881555A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 238000005516 engineering process Methods 0.000 title claims abstract description 10
- 238000002844 melting Methods 0.000 claims abstract description 47
- 230000008018 melting Effects 0.000 claims abstract description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- 238000009833 condensation Methods 0.000 claims abstract description 19
- 230000005494 condensation Effects 0.000 claims abstract description 19
- 239000002994 raw material Substances 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 239000000779 smoke Substances 0.000 claims description 8
- 238000007599 discharging Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- 230000004927 fusion Effects 0.000 abstract description 2
- 238000007689 inspection Methods 0.000 abstract description 2
- 238000007493 shaping process Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 6
- 239000002210 silicon-based material Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010309 melting process Methods 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 235000019504 cigarettes Nutrition 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of processing unit (plant) of semi-conducting material and processing technology, belong to semi-conducting material processing equipment field, including operating desk and melting storehouse, the operating desk is by message handler, operation keyboard and display screen composition, the operation keyboard is arranged on described information processor, the display screen is arranged on described information processor, the operating desk side is provided with heater, the heater is by binding post, mu balanced circuit, transformer and electric heater composition, the binding post is connected by the mu balanced circuit with the transformer, the electric heater is provided with above the transformer, radiator is provided with above the heater, the melting storehouse is provided with above the radiator.The present invention can will be put into silicon raw material, heating silicon raw material, condensation shaping carry out pipelining processing, improve the efficiency and speed of silicon raw material melting, while have the function of the real time inspection progress of work and fusion parameters, simple to operate, easy to use.
Description
Technical field
The invention belongs to semi-conducting material processing equipment field, a kind of processing unit (plant) more particularly to semi-conducting material and
Processing technology.
Background technology
Semiconductor refers to material of the electric conductivity between conductor and insulator under normal temperature.Semiconductor is in radio, TV
Had a wide range of applications on machine and thermometric.If diode is exactly the device using semiconductor fabrication, today most electronics
Product, as the core cell among computer, mobile phone or digital audio tape all has extremely close pass with semiconductor
Even.
Because Moore's Law drives, semiconductor manufacturing is one of manufacturing field that technology is most top, progress is fastest.And
There are high technology barriers (such as typically to require that the metal impurities of chemical reagent are less than 0.1ppb naturally for material as foundation stone
(mg/litre), control particle diameter are less than 0.2 μm).43,400,000,000 dollars of semi-conducting material market scale in 2015, China's Mainland market 60
Hundred million dollars, but the numerous areas localization rate of parts and components is less than 10%.Therefore no matter develop from new material industry, also or semiconductor domesticizes
Process is all an indispensable ring, it is contemplated that country will actively promote the hair of Semiconductor Materials Industry from policy and capital perspective
Exhibition.
Semi-conducting material can be divided into preceding road (wafer manufacture material) and rear road (wafer level packaging material), from the point of view of international market,
Qian Dao and the ratio in rear road are typically maintained in 1.2:1 level, and domestic is 0.7:1, because domestic envelope surveys production in the past few years
Industry is fast-developing, and (China's Mainland envelope survey accounts for semiconductor overall market 42%, and the whole world and Taiwan accounting for the reason of relative maturity
Respectively 23% and 21%).But according to SEMI, the newly-built fab in the whole world is at least up to 19 within 2016,2017, wherein 10 are located at
Continent, it is contemplated that following under semiconductor industry transfer and investment-based growth, manufacturing industry will emerge rapidly at home, design-manufacture-envelope
Surveying the industrial structure will relative optimization.This necessarily implies that the semi-conducting material market space lifts carrying along with preceding road material accounting
Rise, preceding road material will welcome more rapid growth.
The country has formd fairly perfect Semiconductor Materials Industry chain.Although domestic semi-conducting material and foreign countries are advanced
Manufacturer's gap is larger, but the country has formd and (China of Beijing section, revived from silicon chip (upper sea new Noboru, You Yanzong institutes) to photoresist
State is auspicious red) and reagent (Shanghai is newly positive), then be laid out to CMP (ancient cooking vessel dragon share is produced as a trial for 16 years), the last full industrial chain of encapsulating material.
Simultaneously unlike equipment, manufacture, Materials Co., Ltd's species is various, is domestic semiconductor company in the absence of a situation of covering all
Provide niche market and many merger targets.
As microelectronics industry develops rapidly, in addition to itself is to the requirement of process technology and process equipment, and meanwhile it is right
Silicon materials, which it is also proposed, updates higher requirement.Semiconductor silicon material is divided into polysilicon, monocrystalline silicon, silicon epitaxial wafer and amorphous
Silicon, cast polysilicon, deposit and sputtering non-crystalline silicon etc..Since the sixties is widely used in all kinds of electronic components, its
Dosage is averagely about increased with annual 12-16% speed.The whole world consumes about 18,000-25,000 ton semiconductors every year at present
Level polysilicon, consume 6000-7000 ton monocrystalline silicon.1999,4,500,000,000 square inches of whole world silicon chip yield, its production in 2000
Amount is higher.Hundred million dollars of whole world silicon chip consumption sum about 60-80 at present.
Existing polysilicon production process mainly has improved Siemens and silane decomposition.Major product has bar-shaped and grain
Two kinds of shape, main application are used as preparing monocrystalline silicon and solar cell etc..The technique of growing single-crystal silicon can be divided into area and melt
And two kinds of growth techniques of vertical pulling (CZ) (FZ).Study on floating zone silicon (FZ-Si) be mainly used in make power electronic devices (SR, SCR,
GTO etc.), ray detector, high-voltage high-power transistor etc.；Pulling of silicon single crystal (CZ- Si) is mainly used in making LSI, crystal
Pipe, sensor and silicon photocell etc..Silicon epitaxial wafer (EPl) is on single crystalline substrate piece, grows one layer along the crystallization direction of monocrystalline
Conduction type, resistivity, thickness and lattice structure all meet the new single-crystal layer of certain device requirement.Silicon epitaxial wafer is mainly used in making
Make cmos circuit, each transistorlike and insulated gate, bipolar transistor (IGBT) etc..Non-crystalline silicon, cast polysilicon, deposit and splash
Penetrate non-crystalline silicon and be mainly used as various silicon photocells etc..
Wherein, silicon is a kind of important semi-conducting material, and most influential one kind in business application, in silicon
, it is necessary to which the silicon materials to scatter are melted into aftershaping in the process of material, silicon ingot is formed, after cutting, forms silicon wafer
Piece, the working process of semiconductor could to be used for, the melting furnace used at present in silicon materials melting process is generally needed by same
One door is put into silicon raw material, takes out finished product, can not carry out streamline flower silicon materials processing operation, reduces the effect of silicon materials melting
Rate.
The content of the invention
The purpose of the present invention is that to solve the above problems and provides a kind of processing unit (plant) of semi-conducting material and add
Work technique.
The present invention is achieved through the following technical solutions above-mentioned purpose：
The present invention provides following technical scheme（One）：
A kind of processing unit (plant) of semi-conducting material, including operating desk and melting storehouse, the operating desk is by message handler, operated key
Disk and display screen composition, the operation keyboard are arranged on described information processor, and the display screen is arranged at described information
Manage on device, the operating desk side is provided with heater, and the heater is by binding post, mu balanced circuit, transformer and electricity
Hot device composition, the binding post are connected with the transformer by the mu balanced circuit, set above the transformer
Electric heater is stated, radiator is provided with above the heater, the melting storehouse, the melting are provided with above the radiator
Orlop portion is provided with inclined ramp, and smoke exhaust barrel is provided with above the melting storehouse, and the melting storehouse side is provided with discharge funnel,
It is connected below the discharge funnel by mozzle with condensation chamber.
In order to further improve the performance of the present invention, the operating desk passes through the binding post with the heater
Electrical connection.
In order to further improve the performance of the present invention, described information processor electrically connects with the operation keyboard, institute
Message handler is stated to electrically connect with the display screen.
In order to further improve the performance of the present invention, the binding post electrically connects with the mu balanced circuit, described steady
Volt circuit electrically connects with the transformer, and the transformer electrically connects with the electric heater.
It is described in order to further improve the performance of the present invention, the heater and the radiator assembly connection
Radiator and the melting storehouse assembly connection.
In order to further improve the performance of the present invention, the melting storehouse snaps connection with the inclined ramp, described
Melting storehouse is fixedly connected with the smoke exhaust barrel.
In order to further improve the performance of the present invention, the melting storehouse is tethered with the discharge funnel by the fourth of the twelve Earthly Branches to be connect,
The discharge funnel is connected with the mozzle by pipe collar, and the mozzle is connected with the condensation chamber by pipe collar.
The present invention provides following technical scheme（Two）：
A kind of processing technology of semi-conducting material, comprises the following steps：
First, raw semiconductor to be melted is placed on the inclined ramp, staff is defeated by the operating desk afterwards
Enter running parameter, start the heater.
Then, according to the melting temperature of silicon raw material, the heating-up temperature of the heater is set as that 1,500 is Celsius
Degree, and heated by the radiator for the silicon raw material in the melting storehouse.
Then, after heating three hours, the silicon raw material melting in the melting storehouse, and flowed into the presence of self gravitation
In the discharge funnel.
Then, the silicon liquid flowed into the discharge funnel is imported in the condensation chamber by the mozzle and is molded.
Finally, staff whenever necessary can take out the silicon plate that the condensation in the condensation chamber is molded, and be cut
Cut processing.
Compared with prior art, the beneficial effects of the present invention are：
The present invention will can be put into silicon raw material, heating silicon raw material, condensation shaping carry out pipelining processing, improve silicon raw material and melt
The efficiency and speed melted, while there is the function of the real time inspection progress of work and fusion parameters, it is simple to operate, easy to use.
Brief description of the drawings
Fig. 1 is a kind of front view of the processing unit (plant) of semi-conducting material of the present invention.
Fig. 2 is a kind of zoomed-in view of the operating desk of the processing unit (plant) of semi-conducting material of the present invention.
Fig. 3 is a kind of zoomed-in view of the heater of the processing unit (plant) of semi-conducting material of the present invention.
Description of reference numerals is as follows：
1st, operating desk；2nd, heater；3rd, radiator；4th, inclined ramp；5th, storehouse is melted；6th, smoke exhaust barrel；7th, discharge funnel；8、
Mozzle；9th, condensation chamber；101st, message handler；102nd, operation keyboard；103rd, display screen；201st, binding post；202nd, voltage stabilizing electricity
Road；203rd, transformer；204th, electric heater.
Embodiment
The invention will be further described below in conjunction with the accompanying drawings：
As shown in Figure 1-Figure 3, a kind of processing unit (plant) of semi-conducting material, including operating desk 1 and melting storehouse 5, operating desk 1 is by information
Processor 101, operation keyboard 102 and display screen 103 are formed, and operation keyboard 102 is arranged on message handler 101, display screen
103 are arranged on message handler 101, and the side of operating desk 1 is provided with heater 2, and heater 2 is by binding post 201, voltage stabilizing
Circuit 202, transformer 203 and electric heater 204 are formed, and binding post 201 is connected by mu balanced circuit 202 with transformer 203, are become
The top of depressor 203 is provided with electric heater 204, and the top of heater 2 is provided with radiator 3, and the top of radiator 3 is provided with melting storehouse
5, the melting bottom of storehouse 5 is provided with inclined ramp 4, and the top of melting storehouse 5 is provided with smoke exhaust barrel 6, and the melting side of storehouse 5 is provided with discharging leakage
Bucket 7, the lower section of discharge funnel 7 are connected by mozzle 8 with condensation chamber 9.
In order to further improve the performance of the present invention, operating desk 1 is electrically connected with heater 2 by binding post 201,
Staff can be instructed by the input service of operating desk 1, the heating-up temperature of heater 2 be adjusted, so as to regulate and control silicon raw material
Melting process, message handler 101 electrically connect with operation keyboard 102, and message handler 101 electrically connects with display screen 103, work
Personnel can into message handler 101, input service instructs by operation keyboard 102, and shows work by display screen 103
Process and running parameter, binding post 201 electrically connect with mu balanced circuit 202, binding post 201 can be used for electrically connect operating desk 1 with
Heater 2, mu balanced circuit 202 electrically connect with transformer 203, and transformer 203 electrically connects with electric heater 204, and transformer 203 can
To provide electric power, heater 2 and the assembly connection of radiator 3, radiator 3 and the melting assembly connection of storehouse 5 for electric heater 204, add
Thermal 2 can be exhaled even heat by radiator 3, heating melting melting storehouse 5 in silicon raw material, melting storehouse 5 with
Inclined ramp 4 snaps connection, and after silicon raw material melting, can be flowed downward, flowed by inclined ramp 4 in the presence of self gravitation
To lower, melting storehouse 5 is fixedly connected with smoke exhaust barrel 6, and smoke exhaust barrel 6 can be used for discharging useless cigarette, and melting storehouse 5 is logical with discharge funnel 7
Cross the fourth of the twelve Earthly Branches and tether and connect, discharge funnel 7 is connected with mozzle 8 by pipe collar, and mozzle 8 is connected with condensation chamber 9 by pipe collar, discharging leakage
The silicon liquid of melting can be imported to condense in condensation chamber 9 and is molded by bucket 7 by mozzle 8.
Method by the processing semi-conducting material of the present invention is as follows：
First, raw semiconductor to be melted is placed on inclined ramp 4, staff is by the input service of operating desk 1 afterwards
Parameter, start heater 2.
Then, according to the melting temperature of silicon raw material, the heating-up temperature of heater 2 is set as 1,500 degrees Celsius,
And heated by radiator 3 for the silicon raw material in melting storehouse 5.
Then, after heating three hours, the silicon raw material melting in storehouse 5 is melted, and flow into and unload in the presence of self gravitation
In funnel 7.
Then, the silicon liquid flowed into discharge funnel 7 is imported in condensation chamber 9 by mozzle 8 and is molded.
Finally, staff whenever necessary can take out the silicon plate that the condensation in condensation chamber 9 is molded, and carry out cutting and add
Work.
The basic principles, principal features and advantages of the present invention have been shown and described above.The technical staff of the industry should
Understand, the present invention is not limited to the above embodiments, the original for simply illustrating the present invention described in above-described embodiment and specification
Reason, without departing from the spirit and scope of the present invention, various changes and modifications of the present invention are possible, these changes and improvements
It all fall within the protetion scope of the claimed invention.The claimed scope of the invention is by appended claims and its Xiao Wu circle
It is fixed.
Claims (8)
- A kind of 1. processing unit (plant) of semi-conducting material, it is characterised in that：Including operating desk（1）With melting storehouse（5）, the operating desk （1）By message handler（101）, operation keyboard（102）And display screen（103）Composition, the operation keyboard（102）It is arranged on institute State message handler（101）On, the display screen（103）It is arranged on described information processor（101）On, the operating desk（1） Side is provided with heater（2）, the heater（2）By binding post（201）, mu balanced circuit（202）, transformer（203） And electric heater（204）Composition, the binding post（201）Pass through the mu balanced circuit（202）With the transformer（203）It is connected Connect, the transformer（203）Top is provided with the electric heater（204）, the heater（2）Top is provided with radiator （3）, the radiator（3）Top is provided with the melting storehouse（5）, the melting storehouse（5）Bottom is provided with inclined ramp（4）, The melting storehouse（5）Top is provided with smoke exhaust barrel（6）, the melting storehouse（5）Side is provided with discharge funnel（7）, the discharging Funnel（7）Lower section passes through mozzle（8）With condensation chamber（9）It is connected.
- A kind of 2. processing unit (plant) of semi-conducting material according to claim 1, it is characterised in that：The operating desk（1）With The heater（2）Pass through the binding post（201）Electrical connection.
- A kind of 3. processing unit (plant) of semi-conducting material according to claim 1, it is characterised in that：Described information processor （101）With the operation keyboard（102）Electrical connection, described information processor（101）With the display screen（103）Electrical connection.
- A kind of 4. processing unit (plant) of semi-conducting material according to claim 1, it is characterised in that：The binding post（201） With the mu balanced circuit（202）Electrical connection, the mu balanced circuit（202）With the transformer（203）Electrical connection, the transformer （203）With the electric heater（204）Electrical connection.
- A kind of 5. processing unit (plant) of semi-conducting material according to claim 1, it is characterised in that：The heater（2） With the radiator（3）Assembly connection, the radiator（3）With the melting storehouse（5）Assembly connection.
- A kind of 6. processing unit (plant) of semi-conducting material according to claim 1, it is characterised in that：The melting storehouse（5）With The inclined ramp（4）Snap connection, the melting storehouse（5）With the smoke exhaust barrel（6）It is fixedly connected.
- A kind of 7. processing unit (plant) of semi-conducting material according to claim 1, it is characterised in that：The melting storehouse（5）With The discharge funnel（7）Tethered and connect by the fourth of the twelve Earthly Branches, the discharge funnel（7）With the mozzle（8）Connected by pipe collar, it is described to lead Flow tube（8）With the condensation chamber（9）Connected by pipe collar.
- A kind of 8. processing technology of semi-conducting material, it is characterised in that：Comprise the following steps：First, raw semiconductor to be melted is placed on the inclined ramp, staff is defeated by the operating desk afterwards Enter running parameter, start the heater；Then, according to the melting temperature of silicon raw material, the heating-up temperature of the heater is set as 1,500 degrees Celsius, and Heated by the radiator for the silicon raw material in the melting storehouse；Then, after heating three hours, the silicon raw material melting in the melting storehouse, and described in flowing into the presence of the self gravitation In discharge funnel；Then, the silicon liquid flowed into the discharge funnel is imported in the condensation chamber by the mozzle and is molded；Finally, staff whenever necessary can take out the silicon plate that the condensation in the condensation chamber is molded, and carry out cutting and add Work.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711004013.6A CN107881555A (en) | 2017-10-24 | 2017-10-24 | The processing unit (plant) and processing technology of a kind of semi-conducting material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711004013.6A CN107881555A (en) | 2017-10-24 | 2017-10-24 | The processing unit (plant) and processing technology of a kind of semi-conducting material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107881555A true CN107881555A (en) | 2018-04-06 |
Family
ID=61782119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711004013.6A Pending CN107881555A (en) | 2017-10-24 | 2017-10-24 | The processing unit (plant) and processing technology of a kind of semi-conducting material |
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Application publication date: 20180406 |