CN107858642B

CN107858642B - Vapor deposition mask, vapor deposition mask preparation body, manufacturing method of vapor deposition mask, and manufacturing method of organic semiconductor element

Info

Publication number: CN107858642B
Application number: CN201710872210.3A
Authority: CN
Inventors: 武田利彦; 小幡胜也; 落合洋光
Original assignee: Dai Nippon Printing Co Ltd
Current assignee: Dai Nippon Printing Co Ltd
Priority date: 2013-04-12
Filing date: 2014-03-24
Publication date: 2020-04-21
Anticipated expiration: 2034-03-24
Also published as: JP2018119218A; JP6327196B2; JP6940828B2; JP6327048B2; CN107858642A; JP2019196549A; CN107855641A; JP2014218750A; JP6569880B2; JP2015165051A

Abstract

The present invention provides a vapor deposition mask which can satisfy both high definition and weight reduction, and which can form a high-definition vapor deposition pattern while maintaining strength, and which can be easily The manufacturing method of the vapor deposition mask which manufactures this vapor deposition mask independently; the vapor deposition mask preparation body; and the manufacturing method of the organic semiconductor element which can manufacture the high-definition organic semiconductor element. A metal mask (10) provided with a plurality of slits (15) and a resin mask (20) are stacked, wherein the resin mask (20) is provided with openings (25) necessary for forming a plurality of screens, and the openings The portion (25) corresponds to the pattern to be produced by vapor deposition, and each slit (15) is provided at a position overlapping at least one screen as a whole.

Description

Vapor deposition mask, vapor deposition mask preparation body, vapor deposition mask manufacturing method, and organic semiconductor element manufacturing method

The present application is a divisional application of the chinese invention application "vapor deposition mask, vapor deposition mask preparation body, method for manufacturing vapor deposition mask, and method for manufacturing organic semiconductor element" having application date 2014, 3, 24 and application number 201480020615.9.

Technical Field

The present invention relates to a vapor deposition mask, a vapor deposition mask preparation body, a method for manufacturing a vapor deposition mask, and a method for manufacturing an organic semiconductor element.

Background

Conventionally, in the production of an organic EL element, when forming an organic layer or a cathode electrode of the organic EL element, for example, a metal vapor deposition mask in which a plurality of fine slits are arranged in parallel at fine intervals in a region to be vapor deposited is used. In the case of using this vapor deposition mask, the vapor deposition mask is placed on the surface of the substrate to be vapor deposited, and held from the back surface by using a magnet, but since the rigidity of the slit is extremely small, the slit is easily deformed when the vapor deposition mask is held on the surface of the substrate, which prevents high definition and large product size with a large slit length.

Various studies have been made on a vapor deposition mask for preventing the deformation of slits, and for example, patent document 1 discloses a vapor deposition mask including: a base plate having a plurality of openings and also serving as a first metal mask, a second metal mask having a plurality of fine slits in a region covering the openings, and a mask stretching and holding device for positioning the second metal mask on the base plate in a state of being stretched in a longitudinal direction of the slits. That is, a vapor deposition mask combining 2 kinds of metal masks is disclosed. According to the vapor deposition mask, the gap accuracy can be ensured without deformation at the gap.

However, in recent years, as products using organic EL elements have been increased in size and substrates have been increased in size, there has been an increasing demand for increased size of vapor deposition masks, and metal plates used in the production of metal vapor deposition masks have also been increased in size. However, in the conventional metal working technique, it is difficult to form a slit in a large metal plate with high accuracy, and even if deformation of the slit portion can be prevented by the method disclosed in patent document 1 or the like, it is not possible to cope with high definition of the slit. In addition, when the vapor deposition mask is formed of only metal, the mass thereof increases with an increase in size, and the total mass including the frame also increases, which causes a problem in processing.

In the vapor deposition mask disclosed above, in order to reduce the weight of the vapor deposition mask, it is necessary to reduce the thickness of the vapor deposition mask made of metal. However, when the thickness of the vapor deposition mask made of metal is reduced, the strength of the vapor deposition mask is reduced, the vapor deposition mask is deformed, and the process is difficult.

Documents of the prior art

Patent document

Patent document 1: japanese patent laid-open publication No. 2003-332057

Disclosure of Invention

Problems to be solved by the invention

The present invention has been made in view of the above circumstances, and a main object thereof is to provide a vapor deposition mask which can satisfy both high definition and light weight even when it is large-sized, and can form a high-definition vapor deposition pattern while maintaining strength; to provide a method for manufacturing a vapor deposition mask and a vapor deposition mask preparation body, by which the vapor deposition mask can be easily manufactured; and a method for manufacturing an organic semiconductor element, which can manufacture the organic semiconductor element with high precision.

Means for solving the problems

The present invention for solving the above-described problems provides a vapor deposition mask for simultaneously forming vapor deposition patterns for a plurality of screens, wherein a resin mask and a metal mask having a plurality of slits are laminated, wherein the resin mask is provided with openings necessary for forming a plurality of screens, the openings correspond to patterns to be vapor deposited, and the slits are provided at positions overlapping with at least 1 screen as a whole.

The present invention for solving the above problems provides a vapor deposition mask, wherein a metal mask having 1 through hole and a resin mask having a plurality of openings corresponding to a pattern to be vapor deposited are laminated, and all of the plurality of openings are provided at positions overlapping with the 1 through hole.

The present invention for solving the above-described problems provides a vapor deposition mask preparation body for obtaining a vapor deposition mask, wherein a metal mask having slits is laminated on one surface of a resin plate, the slits are provided at positions entirely overlapping openings constituting 1 screen finally provided in the resin plate, the vapor deposition mask is laminated with a resin mask and a metal mask having a plurality of slits, the resin mask is provided with openings necessary for constituting a plurality of screens, the openings correspond to patterns to be vapor deposited, and the slits are provided at positions entirely overlapping at least 1 screen.

The present invention for solving the above-described problems provides a vapor deposition mask preparation body for obtaining a vapor deposition mask, wherein a metal mask having slits is laminated on one surface of a resin plate, each of the 1 through holes is provided at a position overlapping with an entire opening finally provided in the resin plate, the vapor deposition mask is laminated with a metal mask having 1 through hole and a resin mask having a plurality of openings corresponding to a pattern to be vapor deposited, and all of the plurality of openings are provided at positions overlapping with the 1 through hole.

Further, the present invention for solving the above problems provides a method for manufacturing a vapor deposition mask, comprising: preparing a metal mask with a resin plate, in which a resin plate and a metal mask with a plurality of slits are stacked; a resin mask forming step of forming openings necessary for forming a plurality of screens in the resin plate by irradiating the metal mask with laser light; as the metal mask, a metal mask having a slit at a position overlapping with at least 1 of the plurality of screens as a whole is used.

Further, the present invention for solving the above problems provides a method for manufacturing a vapor deposition mask, comprising: preparing a metal mask with a resin plate, in which a resin plate and a metal mask provided with 1 through hole are stacked; and a resin mask forming step of forming a plurality of openings in the resin plate at positions overlapping the 1 through-hole by irradiating the metal mask with laser light.

In the above manufacturing method, the resin mask forming step may be performed after the metal mask with the resin plate is fixed to the frame.

In order to solve the above problems, the present invention provides a method for manufacturing an organic semiconductor device, comprising: forming a vapor deposition pattern on a vapor deposition object using a framed vapor deposition mask having a frame to which the vapor deposition mask is fixed; in the step of forming a vapor deposition pattern, the vapor deposition mask fixed to the frame is formed by laminating a resin mask and a metal mask having a plurality of slits, the resin mask is provided with openings necessary for forming a plurality of screens, and the slits are provided at positions overlapping with at least 1 screen as a whole.

In order to solve the above problems, the present invention provides a method for manufacturing an organic semiconductor device, comprising: and a step of forming a vapor deposition pattern on a vapor deposition object by using a framed vapor deposition mask in which a vapor deposition mask is fixed to a frame, wherein in the step of forming the vapor deposition pattern, the vapor deposition mask fixed to the frame is laminated with a metal mask provided with 1 through hole and a resin mask provided with a plurality of openings corresponding to a pattern to be vapor deposited, and all of the plurality of openings are provided at positions overlapping with the 1 through hole.

ADVANTAGEOUS EFFECTS OF INVENTION

According to the vapor deposition mask of the present invention, it is possible to satisfy both high definition and weight reduction even when the size is increased, and it is possible to form a high-definition vapor deposition pattern while maintaining the strength of the entire vapor deposition mask. Further, according to the vapor deposition mask preparation body or the method for manufacturing a vapor deposition mask of the present invention, a vapor deposition mask having the above-described characteristics can be easily manufactured. In addition, according to the method for manufacturing an organic semiconductor element of the present invention, the organic semiconductor element can be manufactured with high accuracy.

Drawings

Fig. 1 is a front view of a vapor deposition mask according to embodiment (a) as viewed from a metal mask side;

fig. 2 is a partially enlarged sectional view of the vapor deposition mask shown in fig. 1;

fig. 3 is a front view of the vapor deposition mask according to embodiment (a) as viewed from the metal mask side;

fig. 4 is a front view of the vapor deposition mask according to embodiment (a) as viewed from the metal mask side;

fig. 5 is a front view of the vapor deposition mask according to embodiment (a) as viewed from the metal mask side;

fig. 6 is a partially enlarged sectional view of a vapor deposition mask according to embodiment (a);

fig. 7 is a front view of the vapor deposition mask according to embodiment (a) as viewed from the resin mask side;

FIG. 8 is a schematic cross-sectional view showing a relationship between a shadow and a thickness of a metal mask;

fig. 9 is a front view of the vapor deposition mask according to embodiment (a) as viewed from the metal mask side;

fig. 10 is a process diagram for explaining an example of the method for producing a vapor deposition mask according to embodiment (a), wherein all of (a) to (c) are cross-sectional views;

fig. 11 is a front view of the vapor deposition mask according to embodiment (B) as viewed from the metal mask side;

fig. 12 is a partially enlarged sectional view of the vapor deposition mask shown in fig. 11;

fig. 13 is a front view of the vapor deposition mask according to embodiment (B) as viewed from the metal mask side;

fig. 14 is a partially enlarged sectional view of the vapor deposition mask shown in fig. 13;

fig. 15 is a front view of the vapor deposition mask according to embodiment (B) as viewed from the metal mask side;

fig. 16 is a partially enlarged sectional view of a vapor deposition mask according to embodiment (B);

FIG. 17 is a schematic cross-sectional view showing a relationship between a shadow and a thickness of a metal mask;

fig. 18 is a front view of the vapor deposition mask according to embodiment (B) as viewed from the metal mask side;

fig. 19 is a process diagram for explaining an example of the method for producing a vapor deposition mask according to embodiment (B), wherein (a) to (c) are cross-sectional views;

fig. 20 is a front view of a vapor deposition mask with a frame according to an embodiment as viewed from a resin mask side;

fig. 21 is a front view of the vapor deposition mask with a frame according to the embodiment as viewed from the resin mask side.

Description of the marks

100 vapor deposition mask

10 Metal mask

15 slits, through holes

20 resin mask

25 opening part

28 groove

60 Metal frame

200 vapor deposition mask with frame

Detailed Description

Hereinafter, the vapor deposition mask 100 according to an embodiment of the present invention is divided into embodiment (a) and embodiment (B), and is specifically described with reference to the drawings.

< vapor deposition mask of embodiment (A) >

As shown in fig. 1 to 7 and 9, a vapor deposition mask 100 according to embodiment (a) is a vapor deposition mask for simultaneously forming vapor deposition patterns for a plurality of screens, and is characterized in that: the metal mask 10 and the resin mask 20 having a plurality of slits 15 are laminated, the resin mask 20 is provided with openings 25 necessary for forming a plurality of screens, and each slit 15 is provided at a position overlapping at least 1 screen as a whole. Fig. 1, 3 to 5, and 9 are front views of the vapor deposition mask according to embodiment (a) as viewed from the metal mask side, and fig. 2 and 6 are partially enlarged schematic sectional views of the vapor deposition mask shown in fig. 1.

The vapor deposition mask 100 according to embodiment (a) is a vapor deposition mask used for simultaneously forming vapor deposition patterns for a plurality of screens, and vapor deposition patterns corresponding to a plurality of products can be simultaneously formed using 1 vapor deposition mask 100. The "openings" in the present specification refer to patterns to be produced using the vapor deposition masks of embodiments (a) and (B), and when the vapor deposition masks are used to form an organic layer in an organic EL display, for example, the shape of the openings 25 is the shape of the organic layer. In the vapor deposition masks 100 of embodiments (a) and (B), the vapor deposition material discharged from the vapor deposition source passes through the openings 25, and thereby a vapor deposition pattern corresponding to the openings 25 is formed in the vapor deposition target. In addition, "1 screen" means an aggregate of the openings 25 corresponding to 1 product, and when the 1 product is an organic EL display, an aggregate of organic layers necessary for forming 1 organic EL display, that is, an aggregate of the openings 25 serving as an organic layer becomes "1 screen". In the vapor deposition mask 100 according to embodiment (a), a plurality of "1 screen" are arranged on the resin mask 20 at predetermined intervals in order to simultaneously form vapor deposition patterns for a plurality of screens. That is, the resin mask 20 is provided with openings 25 necessary for forming a plurality of screens.

The vapor deposition mask according to embodiment (a) is characterized in that a metal mask 10 having a plurality of slits 15 is stacked on one surface of a resin mask, and each slit of the metal mask 10 is provided at a position overlapping at least 1 entire screen. In other words, between the openings 25 necessary for forming 1 screen, there is no metal line portion having the same length as the longitudinal length of the slit 15 and the same thickness as the metal mask 10 between the openings 25 adjacent in the lateral direction, or there is no metal portion having the same length as the lateral length of the slit 15 and the same thickness as the metal mask 10 between the openings 25 adjacent in the longitudinal direction. Hereinafter, a metal line portion having the same length as the longitudinal length of the slit 15 and the same thickness as the metal mask 10, or a metal line portion having the same length as the lateral length of the slit 15 and the same thickness as the metal mask 10 may be collectively referred to simply as a metal portion.

According to the vapor deposition mask 100 of embodiment (a), when the size of the openings 25 necessary for forming 1 screen or the pitch between the openings 25 forming 1 screen is narrowed, for example, in order to form a screen exceeding 400ppi, even when the size of the openings 25 or the pitch between the openings 25 is extremely small, the interference due to the metal portion can be prevented, and a high-definition image can be formed. In the case where 1 screen is divided by a plurality of slits, in other words, in the case where a metal line portion exists between the openings 25 constituting 1 screen, the metal line portion existing between the openings 25 needs to be thinned as the pitch between the openings 25 constituting 1 screen is narrowed. However, when the metal portion existing between the openings 25 constituting 1 screen is thinned, the frequency of breakage of the metal portion becomes high, and the broken metal portion may have an adverse effect during vapor deposition.

In addition, when there is a metal portion between the openings 25 constituting 1 screen, the metal portion causes shading and makes it difficult to form a high-definition screen. The shadow is a phenomenon in which a part of the vapor deposition material discharged from the vapor deposition source collides with the inner wall surfaces of the slit 15 of the metal mask 10 and does not reach the vapor deposition target, thereby forming a non-vapor deposition portion having a film thickness smaller than the target vapor deposition film thickness. In particular, as the shape of the opening 25 is made finer, the influence of the shadow due to the metal portion existing between the openings 25 in 1 screen becomes larger. That is, in the vapor deposition mask of embodiment (a), a slit is provided at a position overlapping with at least 1 screen as a whole, that is, no metal portion is present between the openings 25 constituting 1 screen, thereby improving the durability of the vapor deposition mask or preventing the influence of shading.

Further, according to the vapor deposition mask 100 of embodiment (a), weight reduction can be achieved as compared with a conventional vapor deposition mask. Specifically, the vapor deposition mask 100 according to embodiment (a) is lightweight when the mass of the vapor deposition mask 100 according to embodiment (a) is compared with the mass of a conventionally known vapor deposition mask made of only a metal (assuming that the thickness of the entire vapor deposition mask is the same), and only a part of the metal material of the conventionally known vapor deposition mask is replaced with a resin material. In addition, in order to achieve weight reduction using a vapor deposition mask made of only a metal, it is necessary to reduce the thickness of the vapor deposition mask, but when the thickness of the vapor deposition mask is reduced, the vapor deposition mask may be deformed or the durability may be reduced when the vapor deposition mask is increased in size. On the other hand, according to the vapor deposition mask of embodiment (a), even when the thickness of the entire vapor deposition mask is increased in order to prevent deformation when the mask is increased in size or satisfy durability, the presence of the resin mask 20 can reduce the weight of the vapor deposition mask compared to a vapor deposition mask formed only of a metal. Hereinafter, each of them will be specifically described. This also applies to the vapor deposition mask of embodiment (B) described later.

(resin mask for Forming vapor deposition mask in embodiment (A))

The resin mask 20 for forming the vapor deposition mask of embodiment (a) may be formed of any conventionally known resin material, and the material is not particularly limited, but preferably a material that can be formed into the high-definition openings 25 by laser processing or the like, has a small rate of change in size with heat or time, has a small moisture absorption rate, and is lightweight. Examples of such a material include polyimide resin, polyamide resin, polyamideimide resin, polyester resin, polyethylene resin, polyvinyl alcohol resin, polypropylene resin, polycarbonate resin, polystyrene resin, polyacrylonitrile resin, ethylene-vinyl acetate copolymer resin, ethylene-vinyl alcohol copolymer resin, ethylene methacrylic acid copolymer resin, polyvinyl chloride resin, polyvinylidene chloride resin, cellophane, ionomer resin, and the like. Among the above-mentioned exemplified materials, a resin material having a thermal expansion coefficient of 16 ppm/C or less is preferable, a resin material having a moisture absorption rate of 1.0% or less is preferable, and a resin material having both of these conditions is particularly preferable. By using a resin mask made of such a resin material, the dimensional accuracy of the opening 25 can be improved, and the rate of change in dimension or moisture absorption with heat or time can be reduced. In the vapor deposition mask of embodiment (a), the resin mask 20 is made of a resin material that can form the openings 25 with high definition, as compared with a metal material as described above. Therefore, the vapor deposition mask 100 having the high-definition openings 25 can be formed. The same applies to the vapor deposition mask of embodiment (B).

The thickness of the resin mask 20 is not particularly limited, and the resin mask 20 is preferably as thin as possible in order to prevent the occurrence of a vapor deposition portion having a film thickness smaller than the target vapor deposition film thickness, that is, so-called shadow, when vapor deposition is performed using the vapor deposition mask 100 of embodiment (a). However, when the thickness of the resin mask 20 is less than 3 μm, defects such as pinholes are likely to occur, and the risk of deformation or the like increases. On the other hand, if it exceeds 25 μm, shading may occur. In view of this, the thickness of the resin mask 20 is preferably 3 μm or more and 25 μm or less. By setting the thickness of the resin mask 20 within this range, the risk of defects such as pinholes, deformation, and the like can be reduced, and the occurrence of shadows can be effectively prevented. In particular, by making the thickness of the resin mask 20 to be 3 μm or more and 10 μm or less, more preferably 4 μm or more and 8 μm or less, the influence of the shadow at the time of forming a high-definition pattern exceeding 400ppi can be more effectively prevented. In the vapor deposition mask of embodiment (a), even when the thickness of the resin mask 20 is reduced to the above-described preferred range, the durability and handleability of the entire vapor deposition mask 100 can be satisfied by the presence of the metal mask 10 provided on the resin mask 20. The same applies to the vapor deposition mask of embodiment (B).

Further, in the vapor deposition mask 100 according to embodiment (a), the metal mask 10 and the resin mask 20 may be bonded directly or via an adhesive layer, but when the metal mask 10 and the resin mask 20 are bonded via the adhesive layer, the total thickness of the resin mask 20 and the adhesive layer is preferably set to be within a range of 3 μm or more and 25 μm or less, more preferably 3 μm or more and 10 μm or less, and particularly preferably 4 μm or more and 8 μm or less, in view of the above-described shadow. The same applies to the vapor deposition mask of embodiment (B).

Further, since the vapor deposition mask 100 according to embodiment (a) is configured by laminating the resin mask 20 and the metal mask 10, the durability of the entire vapor deposition mask is improved by the presence of the metal mask 10, thereby achieving the handling performance and preventing the breakage and deformation. The same applies to the vapor deposition mask of embodiment (B).

Next, an example of the opening 25 constituting 1 screen will be described with reference to fig. 1 and 3 to 6. In the illustrated embodiment, the area enclosed by the broken line is 1 screen. In the illustrated embodiment, for convenience of explanation, the aggregate of a small number of openings 25 is 1 screen, but the present invention is not limited to this embodiment, and for example, when 1 opening 25 is 1 pixel, millions of pixels of openings 25 may be present in 1 screen.

In the embodiment shown in fig. 1, 1 screen is formed by an aggregate of openings 25 in which a plurality of openings 25 are provided in the vertical and horizontal directions. In the embodiment shown in fig. 3, 1 screen is formed by an aggregate of openings 25 in which a plurality of openings 25 are provided in the lateral direction. In the embodiment shown in fig. 4, 1 screen is formed by an aggregate of openings 25 in which a plurality of openings 25 are provided in the vertical direction. Next, in fig. 1, 3, and 4, a slit 15 is provided at a position overlapping the entire 1 screen.

As described above, the slit 15 of the metal mask 10 may be provided at a position overlapping only 1 screen, or the slit 15 may be provided at a position overlapping 2 or more screens as a whole, as shown in fig. 5(a) and 5 (b). In fig. 5(a), in the resin mask shown in fig. 1, a slit 15 is provided at a position overlapping with the entire 2 screens continuing in the horizontal direction. In fig. 5(b), a slit 15 is provided at a position overlapping the entire 3 vertically continuous screens. In the case where 1 slit is overlapped with a plurality of screens as a whole, the greater the proportion of the area occupied by the slit 15 with respect to the entire surface of the metal mask 10, the lower the proportion of the metal portion provided on the resin mask, and the lower the durability of the entire vapor deposition mask 100. Therefore, when a plurality of screens are overlapped with 1 slit as a whole, it is necessary to make an appropriate setting in consideration of the durability of the entire vapor deposition mask 100.

Next, the pitch between the openings 25 constituting 1 screen and the pitch between screens will be described by taking the mode shown in fig. 1 as an example. The pitch between the openings 25 constituting 1 screen or the size of the openings 25 is not particularly limited, and may be appropriately set according to the pattern to be produced by vapor deposition. For example, in the case of forming a 400ppi high-definition vapor deposition pattern, the horizontal pitch (P1) and vertical pitch (P2) of the openings 25 adjacent to each other are about 60 μm in the openings 25 constituting 1 screen. The size of the opening was 500. mu.m²～1000μm²Left and right. The 1 opening 25 is not limited to correspond to 1 pixel, and a plurality of pixels may be collectively formed as 1 opening 25 by arranging the pixels, for example.

The horizontal pitch (P3) and the vertical pitch (P4) between the screens are not particularly limited, and as shown in fig. 1, when 1 slit 15 is provided at a position overlapping the entire 1 screen, a metal portion exists between the screens. Therefore, when the horizontal pitch (P3) and the vertical pitch (P4) between the screens are smaller than or substantially equal to the horizontal pitch (P1) and the vertical pitch (P2) of the openings 25 provided in 1 screen, the metal portions existing between the screens are likely to be disconnected. Therefore, in consideration of this point, the pitch between screens (P3, P4) is preferably wider than the pitch between openings 25 constituting 1 screen (P1, P2). The pitch between screens (P3, P4) is, for example, about 1mm to 100 mm. The pitch between screens means a pitch between adjacent openings in 1 screen and another screen adjacent to the 1 screen.

As shown in fig. 5, when 1 slit 15 is provided at a position overlapping the entire 2 or more screens, no metal portion is present between the screens provided in the 1 slit 15. Therefore, in this case, the pitch between 2 or more screens provided at the position overlapping with 1 slit 15 may be substantially equal to the pitch between the openings 25 constituting 1 screen.

The cross-sectional shape of the openings 25 is not particularly limited, and the opposing end surfaces of the resin mask forming the openings 25 may be substantially parallel to each other, but more preferably, the cross-sectional shape of the openings 25 is a shape widening toward the vapor deposition source as shown in fig. 2 and 6. In other words, it is preferable to have a tapered surface widening toward the metal mask 10 side. By forming the cross-sectional shape of the opening 25 in this configuration, it is possible to prevent the shadow from being generated in the pattern formed by vapor deposition when vapor deposition is performed using the vapor deposition mask of embodiment (a). The taper angle θ may be appropriately set in consideration of the thickness of the resin mask 20, but an angle formed by a straight line connecting the lower bottom front end of the opening of the resin mask and the upper bottom front end of the opening of the same resin mask and the bottom surface of the resin mask 20, in other words, an angle (θ) formed by the inner wall surface of the opening 25 of the resin mask 20 and the surface of the resin mask 20 on the side not in contact with the metal mask 10 (the lower surface of the resin mask in the illustrated embodiment) in a thickness direction cross section of the inner wall surface constituting the opening 25 is preferably in a range of 5 ° to 85 °, more preferably in a range of 15 ° to 80 °, and still more preferably in a range of 25 ° to 65 °. In particular, in this range, an angle smaller than the vapor deposition angle of the vapor deposition machine to be used is also preferable. In fig. 2 and 6, the end surface forming the opening 25 has a linear shape, but the present invention is not limited thereto, and may be formed in a curved shape protruding outward, that is, the entire shape of the opening 25 may be formed in a bowl shape. The opening 25 having such a cross-sectional shape can be formed by, for example, appropriately adjusting the irradiation position of the laser beam, the irradiation energy of the laser beam, or performing multi-stage laser irradiation in which the irradiation position is changed stepwise when forming the opening 25. Fig. 2 and 6 are partially enlarged sectional views showing an example of the vapor deposition mask 100 of the embodiment shown in fig. 1. The same applies to the vapor deposition mask of embodiment (B), and fig. 2 and 6 may be replaced with fig. 12 and 16, respectively.

Since the resin mask 20 is made of a resin material, the opening 25 can be formed without using a processing method conventionally used in metal processing, for example, a processing method such as etching or cutting. That is, the method for forming the opening 25 is not particularly limited, and various processing methods can be used, for example, a laser processing method capable of forming the high-definition opening 25, a precision press processing, a photolithography processing, or the like to form the opening 25. The method of forming the opening 25 by a laser processing method or the like is described later. The same applies to the vapor deposition mask of embodiment (B).

As the etching method, for example, a spray etching method in which an etching material is sprayed from a spray nozzle at a predetermined spray pressure, a wet etching method such as a dip etching method in which an etching solution filled with an etching material is immersed, a spin etching method in which an etching material is dropped, or a dry etching method using gas, plasma, or the like can be used. The same applies to the vapor deposition mask of embodiment (B).

In the vapor deposition mask according to embodiment (a), since the resin mask 20 is used as the vapor deposition mask 100, when vapor deposition is performed using the vapor deposition mask 100, extremely high heat is applied to the openings 25 of the resin mask 20, gas is generated from the end surfaces 25a (see fig. 6) of the resin mask 20 where the openings 25 are formed, and the degree of vacuum in the vapor deposition device may be reduced. Therefore, in consideration of this point, as shown in fig. 6, it is preferable to provide a barrier layer 26 on the end face 25a of the resin mask 20 where the opening 25 is formed. By forming the barrier layer 26, gas generation from the end face 25a of the resin mask 20 where the opening 25 is formed can be prevented. The same applies to the vapor deposition mask of embodiment (B), and fig. 6 may be replaced with fig. 16.

The barrier layer 26 may use an inorganic oxide or inorganic nitride, a thin film layer of metal, or an evaporated layer. As the inorganic oxide, aluminum, or oxides of silicon, indium, tin, and magnesium can be used, and as the metal, aluminum or the like can be used. The thickness of the barrier layer 26 is more preferably about 0.05 μm to 1 μm. The same applies to the vapor deposition mask of embodiment (B).

The barrier layer 26 preferably covers the surface on the vapor deposition source side of the resin mask 20 (not shown). By covering the vapor deposition source-side surface of the resin mask 20 with the barrier layer 26, the barrier property is further improved. When the barrier layer is an inorganic oxide or an inorganic nitride, it is preferably formed by various pvd (physical vapor deposition) methods or cvd (chemical vapor deposition) methods. In the case of a metal, it is preferably formed by various PVD methods such as a sputtering method, an ion plating method, and a vacuum deposition method, particularly a vacuum deposition method. The surface on the vapor deposition source side of the resin mask 20 described here may be the entire surface on the vapor deposition source side of the resin mask 20, or may be only a portion exposed from the metal mask on the surface on the vapor deposition source side of the resin mask 20. The same applies to the vapor deposition mask of embodiment (B).

When the vapor deposition mask of embodiment (a) is used to deposit a vapor deposition target, a magnet or the like is disposed behind the vapor deposition target, and the vapor deposition mask 100 in front of the vapor deposition target is attracted by magnetic force to thereby cause the vapor deposition mask of embodiment (a) to adhere to the vapor deposition target, a magnetic layer (not shown) made of a magnetic material is preferably provided on a surface of the resin mask 20 on the side not in contact with the metal mask 10. By providing the magnetic layer and attracting the magnetic layer and the vapor deposition target by magnetic force, the vapor deposition mask and the vapor deposition target of embodiment (a) can be sufficiently brought into close contact without a gap, and an increase in the vapor deposition pattern caused by the gap between the vapor deposition mask and the vapor deposition target of embodiment (a) can be prevented. Specifically, in the vapor deposition mask of embodiment (a), since no metal portion exists between the openings 25 constituting 1 screen, the vapor deposition mask 100 of embodiment (a) cannot be brought into close contact with the vapor deposition object in the region corresponding to 1 screen. On the other hand, in the case where a magnetic layer is provided, since the vapor deposition mask 100 according to embodiment (a) can be brought into close contact with the vapor deposition object even in the region where the magnetic layer is provided, the vapor deposition mask 100 according to embodiment (a) can be brought into better close contact with the vapor deposition object by providing the magnetic layer in the region corresponding to 1 screen of the resin mask 20. The increase in the vapor deposition pattern means a phenomenon in which a vapor deposition pattern having a shape larger than that of a target vapor deposition pattern is formed. When the vapor deposition mask 100 according to embodiment (a) and the vapor deposition object are brought into close contact with each other by a method other than attracting each other by magnetic force, the magnetic layer is not particularly required to be provided. The same applies to the vapor deposition mask of embodiment (B).

Examples of the material of the magnetic layer include iron, nickel, or cobalt, or an alloy containing these metals. The thickness of the magnetic layer is not particularly limited, but is preferably 0.05 μm or more and 1 μm or less. The same applies to the vapor deposition mask of embodiment (B).

Fig. 7 is a front view of another embodiment of the resin mask. As shown in fig. 7, it is preferable that the resin mask 20 be formed with a groove 28 extending in the longitudinal direction or the transverse direction (longitudinal direction in the case of fig. 7) of the resin mask 20. Although the size or position of the opening 25 may change due to thermal expansion of the resin mask 20 when heated during vapor deposition, the formation of the groove 28 absorbs the expansion of the resin mask, thereby preventing the size or position of the opening 25 from changing due to the expansion of the entire resin mask 20 in a predetermined direction caused by the accumulation of thermal expansion occurring at various locations of the resin mask. The forming position of the groove 28 is not limited, and it may be provided between the openings 25 constituting 1 screen or at a position overlapping the openings 25, but it is preferably provided between the screens. The grooves may be provided only on one surface of the resin mask, for example, on the surface on the side contacting the metal mask, or may be provided only on the surface on the side not contacting the metal mask. Alternatively, the resin mask 20 may be provided on both surfaces thereof.

In fig. 7, the groove 28 extending in the vertical direction is formed between the adjacent screens, but the present invention is not limited thereto, and a groove extending in the horizontal direction may be formed between the adjacent screens. Further, the grooves may be formed in combination.

The depth and width of the groove 28 are not particularly limited, and when the depth of the groove 28 is too deep or the width is too wide, the rigidity of the resin mask 20 tends to decrease, and therefore, it is necessary to set the depth and width in consideration of this point. The cross-sectional shape of the groove is not particularly limited, and may be any shape such as a U-shape or a V-shape, which is selected in consideration of the processing method. The same applies to the vapor deposition mask of embodiment (B).

(Metal mask for Forming vapor deposition mask in embodiment (A))

The metal mask 10 forming the vapor deposition mask of embodiment (a) is made of metal and is provided with a plurality of slits 15. In the vapor deposition mask according to embodiment (a), as described above, each slit 15 is provided at a position overlapping with at least 1 entire screen. In other words, the opening 25 constituting 1 screen is provided at a position overlapping with 1 slit 15.

Next, the advantages of the vapor deposition mask l00 of embodiment (a) in which the shadow is generated, the shadow is generated due to the thickness of the metal mask 10, or the slit is provided at a position overlapping with at least 1 screen as a whole will be described with reference to fig. 8(a) to 8 (c). Fig. 8(a) is a partially enlarged cross-sectional view of a vapor deposition mask in which the openings 25a constituting 1 screen are divided by a plurality of slits 15a, and fig. 8(b) is a partially enlarged cross-sectional view of the vapor deposition mask shown in fig. 8(a) showing a state in which the thickness of the metal mask is increased. Fig. 8(c) is a partially enlarged cross-sectional view showing an example of the vapor deposition mask 100 according to embodiment (a) in which one slit 15 is provided at a position overlapping with 1 screen as a whole, and fig. 8(d) is a partially enlarged cross-sectional view showing a state in which the thickness of the metal mask 10 is increased in the vapor deposition mask 100 in fig. 8 (c). In the illustrated embodiment, an aggregate of 5 openings 25 (arbitrary in the vertical direction) provided in the horizontal direction is 1 screen.

As shown in fig. 8(a), when the opening 25a constituting 1 screen is divided into a plurality of slits 15a, a metal portion forming a wall surface of the slit 15a exists in a part of the adjacent opening 25 a. When the pitch of the openings 25a or the shape of the openings 25a is made finer to form a high-definition vapor deposition pattern, if a metal portion exists between the openings 25a constituting 1 screen, the metal portion prevents the vapor deposition material discharged from the vapor deposition source from passing into the openings 25a, making it difficult to form a high-definition vapor deposition pattern. In addition, when the thickness of the metal mask 10a is reduced, the durability of the entire vapor deposition mask is also reduced. In order to improve the durability of the entire vapor deposition mask, when the thickness of the metal mask 10a is increased as shown in fig. 8(b), the vapor deposition material discharged from the vapor deposition source is more likely to collide with the inner wall surface of the metal portion. The larger the amount of the vapor deposition material that collides against the inner wall surface, the larger the amount of the vapor deposition material that cannot reach the vapor deposition target, and the more noticeable the occurrence of the shadow. In addition, when the pitch between the openings 25a is narrowed, the metal portion existing between the openings 25a needs to be thinned, and the risk of disconnection of the metal portion increases. Further, when the metal portion is broken, the durability of the entire vapor deposition mask is reduced.

On the other hand, in the vapor deposition mask of embodiment (a), as shown in fig. 8(c), all the openings 25 provided in 1 screen as a whole, that is, 1 screen are provided at positions overlapping with 1 slit 15. Therefore, as shown in fig. 8(c), the vapor deposition material can be passed through the openings 25 without waste, and the occurrence of a shadow can be prevented. Further, as shown in fig. 8(d), even when the thickness of the metal mask 10 is increased to some extent, a high-precision vapor deposition pattern with less influence of shading can be formed. In particular, in the vapor deposition mask of embodiment (a), the occurrence of a shadow can be prevented even when the thickness of the metal mask 10 is formed to be about 100 μm. Since the durability of the entire vapor deposition mask 100 is improved by increasing the thickness of the metal mask 10, the durability of the vapor deposition mask of embodiment (a) can be improved by appropriately setting the thickness while forming a high-definition vapor deposition pattern.

The thickness of the metal mask 10 is not particularly limited, but is preferably 100 μm or less, more preferably 50 μm or less, and particularly preferably 35 μm or less, in order to more effectively prevent the occurrence of a shadow in the opening 25 located in the vicinity of the inner wall surface of the slit 15. The same applies to the vapor deposition mask of embodiment (B), and the slits 15 may be replaced with through holes.

In the vapor deposition mask 100 according to embodiment (a), it is preferable that the cross-sectional shape of the slit 15 is formed to be wider toward the vapor deposition source, as shown in fig. 2 and 6, in order to sufficiently prevent the occurrence of a shadow. By forming the vapor deposition mask in such a cross-sectional shape, even when the thickness of the entire vapor deposition mask is increased for the purpose of preventing deformation that may occur in the vapor deposition mask 100 or improving durability, the vapor deposition material discharged from the vapor deposition source can reach the vapor deposition target without colliding with the surface of the slit 15 or the inner wall surface of the slit 15. Specifically, an angle formed by a straight line connecting the lower bottom end of the slit 15 of the metal mask 10 and the upper bottom end of the slit 15 of the same metal mask 10 and the bottom surface of the metal mask 10, in other words, an angle formed by the inner wall surface of the slit l5 and the surface of the metal mask 10 on the side contacting the resin mask 20 (the lower surface of the metal mask in the illustrated embodiment) in the thickness direction cross section of the inner wall surface constituting the slit 15 of the metal mask 10 is preferably in a range of 5 ° to 85 °, more preferably in a range of 15 ° to 80 °, and still more preferably in a range of 25 ° to 65 °. In particular, when the amount is within this range, an angle smaller than the vapor deposition angle of the vapor deposition device to be used is also preferable. By forming such a cross-sectional shape, even when the thickness of the metal mask 10 is increased for the purpose of preventing deformation of the vapor deposition mask 100 and improving durability, the vapor deposition material discharged from the vapor deposition source can reach the vapor deposition target without colliding with the inner wall surfaces of the slits 15. This can more effectively prevent the occurrence of shadows. The facing end surfaces of the openings 25 of the resin mask 20 may be substantially parallel to each other, but as described above, the slit 15 of the metal mask 10 and the openings 25 of the resin mask 20 are preferably formed to have a cross-sectional shape that widens toward the vapor deposition source side.

The material of the metal mask 10 is not particularly limited, and conventionally known materials can be appropriately selected and used in the field of vapor deposition masks, and examples thereof include metal materials such as stainless steel, iron-nickel alloys, and aluminum alloys. Among them, invar alloy materials, which are iron-nickel alloys, are less likely to be thermally deformed, and therefore can be suitably used. The same applies to the vapor deposition mask of embodiment (B).

When vapor deposition is performed on a substrate using the vapor deposition mask 100 according to embodiment (a), the metal mask 10 is preferably formed of a magnetic material when it is necessary to arrange a magnet or the like behind the substrate and attract the vapor deposition mask 100 in front of the substrate by magnetic force. Examples of the magnetic metal mask 10 include iron-nickel alloy, pure iron, carbon steel, tungsten (W) steel, chromium (Cr) steel, cobalt (Co) steel, KS steel, which is an alloy containing iron of cobalt, tungsten, chromium and carbon, MK steel containing iron, nickel and aluminum as a main component, NKS steel in which cobalt and titanium are added to MK steel, Cu — Ni — Co steel, aluminum (Al) -iron (Fe) alloy, and the like. In the case where the material itself forming the metal mask 10 is not a magnetic material, the magnetic material may be dispersed in the material to provide magnetism to the metal mask 10. The same applies to the vapor deposition mask of embodiment (B).

Fig. 9 is a front view showing another embodiment of the vapor deposition mask 100 according to embodiment (a). As shown in fig. 9, in a front view of the vapor deposition mask 100 viewed from the metal mask 10 side, the openings 25 constituting 1 screen may be arranged in a staggered manner in the lateral direction. That is, the openings 25 adjacent in the lateral direction may be arranged offset in the vertical direction. With this arrangement, even when the resin mask 20 is thermally expanded, the expansion occurring in various places can be absorbed by the opening 25, and the expansion accumulation and the occurrence of large deformation can be prevented.

< vapor deposition mask of embodiment (B) >

As shown in fig. 11 and 12, the vapor deposition mask according to embodiment (B) is formed by laminating a metal mask 10 provided with 1 through hole 15 and a resin mask 20 provided with a plurality of openings corresponding to a pattern to be vapor deposited, and all of the plurality of openings 25 are provided at positions overlapping with 1 through hole provided in the metal mask 10. Fig. 11 is a front view of the vapor deposition mask according to embodiment (B) as viewed from the metal mask side, and fig. 12 is a partially enlarged schematic cross-sectional view of the vapor deposition mask shown in fig. 11.

According to the vapor deposition mask 100 of embodiment (B), since the metal mask 10 is provided on the resin mask 20, the durability or handleability of the vapor deposition mask 100 can be improved. Further, when the vapor deposition mask is formed only of the resin mask without providing the metal mask 10 on the resin mask 20, the durability or handling property of the vapor deposition mask is lowered. In particular, in order to form a high-definition vapor deposition pattern, the thickness of the resin mask is more preferably thin, and when the thickness of the resin mask is made thin, the durability or handling performance of the vapor deposition mask made of only the resin mask is further reduced.

According to the vapor deposition mask of embodiment (B), as described above, even when the thickness of the resin mask 20 is reduced, sufficient durability and handleability can be imparted to the vapor deposition mask 100 due to the presence of the metal mask 10.

In the vapor deposition mask according to embodiment (B), the metal mask 10 having 1 through hole 15 is provided on the resin mask 20 having the plurality of openings 25, and all of the plurality of openings 25 are provided at positions overlapping with the 1 through hole 15. In the vapor deposition mask 100 of embodiment (B) having such a configuration, since no metal portion is present between the openings 25, a high-definition vapor deposition pattern can be formed in accordance with the size of the openings 25 provided in the resin mask 20 without being disturbed by the metal portion.

The advantage of the vapor deposition mask according to embodiment (B) will be specifically described below with reference to fig. 17. Fig. 17(a) is a partially enlarged cross-sectional view of a vapor deposition mask in which openings 25a of a resin mask 20a are divided by a plurality of through holes 15a, and metal portions forming wall surfaces of the through holes 15a are present between the openings 25 a. Fig. 17(b) is a partially enlarged cross-sectional view of the vapor deposition mask in fig. 17(a), in which the thickness of the metal mask 10a is increased.

As shown in fig. 17(a) and (b), when a metal portion forming the wall surface of the through hole 15a exists between the openings 25a, when forming a vapor deposition pattern using the vapor deposition mask shown in fig. 17(a) and (b), the vapor deposition material discharged from the vapor deposition source collides with the metal portion, and the accuracy of the formed vapor deposition pattern is lowered due to the influence of shadow. The shadow is a phenomenon in which a part of the vapor deposition material discharged from the vapor deposition source collides with the wall surface of the through hole of the metal mask and does not reach the vapor deposition target, thereby causing a non-vapor deposition portion having a film thickness smaller than the intended vapor deposition film thickness on the vapor deposition pattern. The collision of the vapor deposition material with the metal portion occurs more significantly as the thickness of the metal portion is increased, in other words, as the thickness of the metal mask 10a is increased.

In order to prevent the occurrence of the shadow, it is effective to take measures to reduce the thickness of the metal mask 10a as shown in fig. 17(a), but when the size of the openings 25a or the pitch between the openings 25a is made finer in order to form a high-definition vapor deposition pattern, even if the thickness of the metal mask 10a is reduced and the thickness of the metal portion existing between the openings 25a is reduced, the shadow is affected, and it is difficult to form a high-definition vapor deposition pattern. Further, by making the thickness of the metal mask 10a thin, the durability of the entire vapor deposition mask is also reduced. In addition, when the pitch between the openings 25a is narrowed, the metal portion existing between the openings 25a needs to be thinned, and the risk of disconnection of the metal portion increases.

On the other hand, in the vapor deposition mask 100 of embodiment (B), as shown in fig. 17(c) and (d), since there is no metal portion forming the wall surface of the through hole 15 between the openings 25, a high-definition vapor deposition pattern can be formed without being affected by shading. In other words, since the metal portion forming the wall surface of the through hole 15 is located near the end of the vapor deposition mask 100, the formation of the vapor deposition pattern is not affected, and a high-definition vapor deposition pattern can be formed. Further, as shown in fig. 17(d), since the metal mask 10 is hardly affected by the shadow even when the thickness thereof is increased, the thickness of the metal mask 10 can be increased until the durability or the handleability can be sufficiently satisfied, a high-definition vapor deposition pattern can be formed, and the durability or the handleability can be improved.

(resin mask for Forming vapor deposition mask in embodiment (B))

The resin mask 20 forming the vapor deposition mask of embodiment (B) is made of resin, and as shown in fig. 12, a plurality of openings 25 corresponding to a pattern to be vapor deposited are provided at positions overlapping with 1 through hole 15. The openings 25 correspond to a pattern to be vapor-deposited, and a vapor deposition pattern corresponding to the openings 25 is formed on the vapor deposition target by passing the vapor deposition material discharged from the vapor deposition source through the openings 25. In the illustrated embodiment, the explanation is given of an example in which the plurality of rows of openings are arranged vertically and horizontally, but the openings may be arranged only vertically or horizontally. The vapor deposition mask 100 of embodiment (a) is different from the vapor deposition mask of embodiment (a) in that the slits 15 of the metal mask 10 are provided at positions overlapping with 1 screen composed of at least an aggregate of openings provided in the resin mask, and the vapor deposition mask 100 of embodiment (B) is different from the vapor deposition mask of embodiment (a) in that the through holes 15 of the metal mask 10 are positioned at positions overlapping with all the openings provided in the resin mask. In addition to the difference, the embodiment described in the vapor deposition mask of embodiment (a) can be selected as appropriate. The following description focuses on the differences.

The shape and size of the opening 25 are not particularly limited, and may be any shape and size according to the pattern to be formed by vapor deposition. As shown in fig. 11, the pitch P1 in the vertical direction or the pitch P2 in the horizontal direction of the adjacent openings 25 may be set as appropriate according to the pattern to be produced by vapor deposition. For example, when a 400ppi high-definition vapor deposition pattern is formed, the pitch in the vertical direction (P1) and the pitch in the horizontal direction (P2) of the adjacent openings 25 among the openings 25 constituting 1 screen are about 60 μm. The size of the opening was 500. mu.m²～1000μm²Left and right. The 1 opening 25 is not limited to correspond to 1 pixel, and a plurality of pixels may be collectively formed as 1 opening 25 by arranging the pixels, for example.

The vapor deposition mask 100 according to embodiment (B) may be used to form vapor deposition patterns corresponding to 1 screen, or may be used to simultaneously form vapor deposition patterns corresponding to 2 or more screens. In this case, as shown in fig. 15, the openings 25 are preferably provided at predetermined intervals for each screen unit. In fig. 15, a region enclosed by a broken line is referred to as "1 screen". In fig. 15, 1 screen is constituted by 12 openings 25, but the present invention is not limited to this embodiment, and for example, when 1 opening 25 is 1 pixel, 1 screen may be constituted by millions of openings 25. As an example of the pitch between screens, both the vertical pitch and the horizontal pitch are about 1mm to 100 mm. The pitch between screens is a pitch between adjacent openings in 1 screen and another screen adjacent to the 1 screen.

Fig. 18 is a front view showing another embodiment of the vapor deposition mask 100 according to embodiment (B). As shown in fig. 18, the openings 25 may be arranged in a staggered manner in the lateral direction in a front view of the vapor deposition mask 100 viewed from the metal mask 10 side. That is, the openings 25 may be arranged to be shifted in the vertical direction so as to be adjacent in the horizontal direction. By arranging as described above, even when the resin mask 20 is thermally expanded, the expansion occurring in various places can be absorbed by the opening 25, and the expansion accumulation and the occurrence of large deformation can be prevented.

(Metal mask for Forming vapor deposition mask in embodiment (B))

The metal mask 10 forming the vapor deposition mask of embodiment (B) is made of metal and has 1 through hole 15. In the vapor deposition mask according to embodiment (B), the 1 through-hole 15 is arranged at a position overlapping with all the openings 25, in other words, at a position where all the openings 25 of the resin mask 20 are visible when viewed from the front of the metal mask 10.

The metal portion constituting the metal mask 10, that is, the portion other than the through hole 15 may be provided along the outer edge of the vapor deposition mask 100 as shown in fig. 11, or the metal mask 10 may be smaller than the resin mask 20 to expose the outer peripheral portion of the resin mask 20 as shown in fig. 13. Fig. 14 is a partially enlarged schematic cross-sectional view of the vapor deposition mask shown in fig. 13. The size of the metal mask 10 may be larger than that of the resin mask 20, and a part of the metal portion may protrude outward in the lateral direction or outward in the longitudinal direction of the resin mask. In any case, the size of the through hole 15 is smaller than the size of the resin mask 20.

The lateral width (W1) or the vertical width (W2) of the metal portion forming the wall surface of the through hole of the metal mask 10 shown in fig. 11 is not particularly limited, but the durability or the handling property tends to be lowered as the widths of W1 and W2 become narrower. Therefore, W1 and W2 are preferably formed to have a width sufficient to satisfy durability and handleability. The width can be appropriately set according to the thickness of the metal mask 10, but W1 and W2 are both about 1mm to 100mm as an example of a preferable width.

In order to sufficiently prevent the occurrence of a shadow in the opening 25 located near the inner wall surface of the through-hole 15, the cross-sectional shape of the through-hole 15 is preferably formed to be wider toward the vapor deposition source. By forming the cross-sectional shape in this manner, the vapor deposition material discharged from the vapor deposition source can also pass through the opening 25 located in the vicinity of the inner wall surface of the through-hole 15 without waste. Specifically, the angle formed by the straight line connecting the lower bottom end of the through hole 15 of the metal mask 10 and the upper bottom end of the through hole 15 of the same metal mask 10 and the bottom surface of the metal mask 10 is preferably in the range of 25 ° to 65 °. In particular, when the amount is within this range, an angle smaller than the vapor deposition angle of the vapor deposition device to be used is also preferable.

The vapor deposition mask 100 according to embodiment (B) of the present invention has been described above mainly with respect to the example in which only 1 through hole 15 is provided in the metal mask 10, but a plurality of through holes 15 may be provided in the metal mask 10. In this case, it is essential that 1 through-hole 15 out of the plurality of through-holes 15 is provided at a position overlapping with all of the openings 25 provided in the resin mask 20.

(method for manufacturing vapor deposition mask according to embodiment (A))

Next, a method for manufacturing a vapor deposition mask according to embodiment (a) of the present invention will be described. As shown in fig. 10(a), the method for manufacturing the vapor deposition mask 100 according to embodiment (a) includes: preparing a metal mask with a resin plate, which is formed by laminating a metal mask 10 provided with a plurality of slits 15 and a resin plate 30; as shown in fig. 10(b), a resin mask forming step of forming openings 25 necessary for forming a plurality of screens on a resin plate 30 by irradiating a laser beam from a metal mask side, and a metal mask provided with slits 15 overlapping with at least 1 screen of the plurality of screens as a whole is used as the metal mask 10 constituting the metal mask with the resin plate. The method for manufacturing the vapor deposition mask according to embodiment (a) will be specifically described below.

(preparation of Metal mask with resin plate)

When preparing a metal mask with a resin plate in which the metal mask 10 having slits and the resin plate 30 are laminated as shown in fig. 10(a), first, a metal mask having a plurality of slits 15 is prepared. In the method of manufacturing a vapor deposition mask according to embodiment (a), the metal mask 10 provided with the slits 15 described in the vapor deposition mask 100 according to embodiment (a) is used as the metal mask 10 to be prepared here, and the slits 15 are overlapped with the entire openings 25 provided in at least 1 screen.

The method of bonding or forming the metal mask with the resin plate to form the metal mask with the resin plate is not particularly limited, and for example, a laminate formed by applying a resin layer to a metal plate to be the metal mask is prepared in advance, and the metal mask with the resin plate can be obtained by forming the slit 15 in the metal plate in the state of the laminate. In the method for manufacturing a vapor deposition mask according to embodiment (a), the resin plate constituting the metal mask with the resin plate also includes the resin layer formed by coating as described above. That is, the resin sheet may be a previously prepared resin sheet or may be a resin sheet formed by a conventionally known coating method or the like. The metal mask 10 and the resin plate may be bonded to each other with various adhesives, or a resin plate having self-adhesiveness may be used. The metal mask 10 and the resin plate 30 may have the same size. In consideration of the fixation to the frame which is arbitrarily performed later, it is preferable to make the size of the resin plate 30 smaller than the metal plate 10 and to form a state in which the outer peripheral portion of the metal mask 10 is exposed, because the welding between the metal mask 10 and the frame is easy. The same applies to the method for manufacturing the vapor deposition mask of embodiment (B), and the slits may be replaced with 1 through hole.

As a method of forming the metal mask 10 provided with the slit 15, a mask member such as a resist material is applied to the surface of the metal plate, and a predetermined portion is exposed and developed, thereby finally forming a resist pattern in which a position where the slit 15 is to be formed is left. As a resist material used as a mask member, a material having good handling properties and desired resolution is preferable. Next, etching is performed by an etching method using the resist pattern as a resist mask. After the etching is completed, the resist pattern is cleaned and removed. Thereby, the metal mask 10 provided with the plurality of slits 15 is obtained. The etching for forming the slit 15 may be performed from one surface side of the metal plate or from both surfaces. In the case of forming the slit 15 in the metal plate by using a laminate in which a resin plate is provided on a metal plate, a mask member is applied to the surface of the metal plate on the side not in contact with the resin plate, a resist pattern is formed, and then the slit 15 is formed by etching from one side. In addition, when the resin plate has etching resistance to the etching material of the metal plate, although it is not necessary to shield the surface of the resin plate, when the resin plate does not have resistance to the etching material of the metal plate, it is necessary to coat the surface of the resin plate with a mask member. In addition, although the above description has been mainly given with a resist material as a mask member, a dry film resist may be stacked and patterned similarly instead of applying a resist material. The same applies to the method for manufacturing the vapor deposition mask of embodiment (B), and the slits may be replaced with 1 through hole.

(step of fixing a metal mask made of a resin plate to a frame)

This step is an arbitrary step in the method for manufacturing a vapor deposition mask according to embodiment (a), but since the completed vapor deposition mask is not fixed to the frame, but an opening is provided in the metal mask with the resin plate in a state of being fixed to the frame from the rear, the positional accuracy can be particularly improved. When the completed vapor deposition mask 100 is fixed to the frame, the metal mask having the openings defined therein is fixed while being stretched with respect to the frame, and therefore, the opening position coordinate accuracy is lower than in the case where the present step is provided.

The method for fixing the metal mask of the resin plate to the frame is not particularly limited, and any conventionally known process method such as spot welding may be appropriately used.

(step of irradiating a resin plate with a metal mask having a resin plate with a laser beam from the metal mask side to form an opening corresponding to a pattern to be vapor-deposited)

Next, as shown in fig. 10(b), the resin plate 30 is irradiated with laser light from the metal mask 10 side of the metal mask with resin plate through the slit 15 to form openings 25 corresponding to a pattern to be vapor-deposited, thereby forming the resin mask 20. The laser device used here is not particularly limited, and any conventionally known laser device may be used. Thus, a vapor deposition mask 100 according to embodiment (a) shown in fig. 10(c) was obtained.

In the manufacturing method of embodiment (a), since the metal mask 10 in which the slit 15 is provided in advance at a position overlapping with the entire 1 screen or the entire 2 or more screens is used, the opening 25 necessary for constituting 1 screen or the opening 25 necessary for constituting 2 or more screens is formed in 1 slit 15 in this step. That is, the 1 slit 15 is provided so as to overlap the opening 25 constituting the entire 1 screen or the entire 2 or more screens.

When the openings 25 are provided in the resin plate of the metal mask with resin plate fixed to the frame, a reference plate (not shown) on which a pattern to be formed by vapor deposition, that is, a pattern corresponding to the openings 25 to be formed is previously provided may be prepared, and laser irradiation corresponding to the pattern of the reference plate may be performed from the metal mask 10 side in a state where the reference plate is bonded to the surface of the resin plate on the side where the metal mask 10 is not provided. According to this method, the openings 25 can be formed in a so-called opposed state in which the laser beam is irradiated while observing the pattern of the reference plate bonded to the metal mask with the resin plate, and the openings 25 can be formed with high definition having extremely high dimensional accuracy. In addition, since this method forms the openings 25 in a state of being fixed to the frame, it is possible to form a vapor deposition mask having excellent dimensional accuracy and positional accuracy.

In the case of using the above method, it is necessary to be able to recognize the pattern of the reference plate from the metal mask 10 side through the resin plate 30 by a laser irradiation device or the like. As described above, when the resin plate is formed to have a preferable thickness in consideration of the influence of the shadow, for example, a thickness of about 3 to 25 μm, the pattern of the reference plate can be recognized even with a colored resin plate. The same method can be used for the method for manufacturing the vapor deposition mask of embodiment (B).

The method of bonding the metal mask with resin plate and the reference plate is not particularly limited, and for example, when the metal mask 10 is a magnetic body, a magnet or the like may be disposed behind the reference plate to attract and bond the resin plate 30 with the metal mask with resin plate and the reference plate. In addition, bonding may be performed by an electrostatic adsorption method or the like. Examples of the reference plate include a TFT substrate having a predetermined opening pattern, a photomask, and the like. The same method can be used for the method for manufacturing the vapor deposition mask of embodiment (B).

In addition, the thinning step may be performed between the above-described steps or after the steps. For example, when a material having a thickness larger than the preferable thickness described above is used as the resin plate 30 or the metal mask 10 which will eventually become the resin mask 20, excellent durability and transportability can be imparted when the metal mask 10 or the resin plate 30 is transported alone in the manufacturing process. On the other hand, in order to prevent the occurrence of a shadow or the like, the thickness of the vapor deposition mask 100 obtained in the production method of embodiment (a) is preferably an optimum thickness. The thinning step is a step useful in a case where durability and transportability are satisfied between manufacturing steps or after the steps, and the thickness of the vapor deposition mask 100 is optimized.

The thinning of the metal mask 10 can be achieved by etching the surface of the metal mask 10 not in contact with the resin plate 30 or the resin mask 20 with an etching material capable of etching the metal mask 10 between the above-described steps or after the above-described steps.

Similarly, the resin plate 30 or the resin mask 20 serving as the resin mask 20 can be thinned, that is, the thicknesses of the resin plate 30 and the resin mask 20 can be optimized, and the resin plate 30 or the resin mask 20 can be etched between any of the above-described steps or after the above-described steps using an etching material that can etch the material of the resin plate 30 or the resin mask 20 on the surface of the resin plate 30 not in contact with the metal mask 10. After the vapor deposition mask 100 is formed, both the metal mask 10 and the resin mask 30 may be etched, so that the thicknesses of the both can be optimized. The above-described thinning step can be applied as it is to the method for manufacturing a vapor deposition mask according to embodiment (B).

(method for manufacturing vapor deposition mask according to embodiment (B))

Next, a method for manufacturing a vapor deposition mask according to embodiment (B) of the present invention will be described. As shown in fig. 19, the method for manufacturing a vapor deposition mask 100 according to embodiment (B) includes: a step of preparing a metal mask with a resin plate, which is formed by laminating a metal mask 10 provided with 1 through hole and a resin plate 30 (see fig. 19 a), and a step of forming a resin mask, which is formed by irradiating a laser beam from the metal mask 10 side to form a plurality of openings 25 at positions of the resin plate 30 overlapping with the 1 through hole 15 (see fig. 19 b). The method for producing the vapor deposition mask according to embodiment (B) will be specifically described below.

(preparation of Metal mask with resin plate)

This step is a step of preparing a metal mask with a resin plate by laminating the metal mask 10 provided with 1 through hole 15 and the resin plate 30.

(step of fixing a metal mask made of a resin plate to a frame)

This step is an optional step in the method for producing a vapor deposition mask according to embodiment (B), and the method described in the method for producing a vapor deposition mask according to embodiment (a) above can be used as it is, and detailed description thereof is omitted here.

(step of irradiating the metal mask with laser light from the side of the metal mask to form a plurality of openings overlapping with 1 through hole in the metal mask with resin plate.)

Next, as shown in fig. 19(b), the resin plate 30 is irradiated with laser light from the metal mask 10 side through 1 through hole 15 to form an opening 25 corresponding to a pattern to be produced by vapor deposition, thereby producing a resin mask 20. In this step, since laser irradiation is performed through 1 through hole 15, a plurality of openings 25 are finally formed at positions overlapping with 1 through hole 15. The laser device used here is not particularly limited, and any conventionally known laser device may be used. Thus, a vapor deposition mask 100 according to embodiment (B) shown in fig. 19(c) was obtained.

(vapor deposition mask preparation body)

Next, a vapor deposition mask preparation body according to an embodiment of the present invention will be described. A vapor deposition mask preparation body according to an embodiment of the present invention is a vapor deposition mask preparation body for obtaining a vapor deposition mask, wherein a metal mask having slits is laminated on one surface of a resin plate, each slit is provided at a position overlapping with an entire opening constituting 1 screen finally provided in the resin plate, the vapor deposition mask is laminated with a resin mask and a metal mask having a plurality of slits, the resin mask is provided with openings necessary for constituting a plurality of screens, the openings correspond to a pattern to be vapor deposited, and each slit is provided at a position overlapping with at least 1 entire screen.

The vapor deposition mask preparation body according to the embodiment of the present invention is common to the vapor deposition mask 100 according to the embodiment (a) described above except that the opening 25 is not provided in the resin plate, and a detailed description thereof is omitted. A specific configuration of the vapor deposition mask preparation body according to an embodiment includes a metal mask with a resin plate (see fig. 10 a) prepared in a preparation step in the vapor deposition mask manufacturing method according to embodiment (a).

According to the vapor deposition mask preparation body of the above-described embodiment, the opening is formed in the resin plate of the vapor deposition mask preparation body, and even when the size is increased, both high definition and weight reduction can be satisfied, and a vapor deposition mask capable of forming a high-definition vapor deposition pattern can be obtained.

A vapor deposition mask preparation body according to another embodiment is a vapor deposition mask preparation body for obtaining a vapor deposition mask, wherein a metal mask having 1 through hole is stacked on one surface of a resin plate, 1 through hole is provided at a position overlapping with all openings finally provided in the resin plate, the vapor deposition mask includes a metal mask having 1 through hole and a resin mask having a plurality of openings corresponding to a pattern to be vapor deposited, and all the openings are provided at a position overlapping with 1 through hole.

The vapor deposition mask preparation body according to the other embodiment is common to the vapor deposition mask 100 according to embodiment (B) described above except that the openings 25 are not provided in the resin plate, and detailed description thereof is omitted. As a specific configuration of the vapor deposition mask preparation body of another embodiment, there is a metal mask with a resin plate (see fig. 19(a)) prepared in the preparation step in the vapor deposition mask manufacturing method of embodiment (B).

According to the vapor deposition mask preparation body of the other embodiments described above, by forming the openings in the resin plate of the vapor deposition mask preparation body, even when the size is increased, both high definition and weight reduction can be satisfied, and a vapor deposition mask capable of forming a high-definition vapor deposition pattern can be obtained.

(method for manufacturing organic semiconductor device)

Next, a method for manufacturing an organic semiconductor device according to an embodiment of the present invention will be described. A method for manufacturing an organic semiconductor device according to an embodiment of the present invention includes: in the step of forming the organic semiconductor element, the following frame-equipped vapor deposition mask is used.

The method for manufacturing an organic semiconductor element having a step of forming a vapor deposition pattern by a vapor deposition method using a vapor deposition mask with a frame includes: an electrode forming step of forming an electrode on a substrate, an organic layer forming step, a counter electrode forming step, a sealing layer forming step, and the like, and in each of the steps, a vapor deposition pattern is formed on the substrate by a vapor deposition method using a vapor deposition mask with a frame. For example, when a vapor deposition method using a framed vapor deposition mask is applied to each of the light-emitting layer forming steps for R, G, B colors of the organic EL element, vapor deposition patterns for the light-emitting layers of the respective colors are formed on the substrate. The method for manufacturing an organic semiconductor device according to an embodiment of the present invention is not limited to these steps, and can be applied to any step in manufacturing a conventionally known organic semiconductor device using a vapor deposition method.

In the method for manufacturing an organic semiconductor element according to an embodiment of the present invention, in the step of forming the vapor deposition pattern, the vapor deposition mask fixed to the frame is the vapor deposition mask according to embodiment (a) or the vapor deposition mask according to embodiment (B) described above.

The vapor deposition mask 100 according to embodiment (a) or (B) described above can be used as a vapor deposition mask constituting a framed vapor deposition mask, and a detailed description thereof will be omitted. According to the method for manufacturing an organic semiconductor element using a framed vapor deposition mask including the vapor deposition mask according to embodiment (a) or the vapor deposition mask according to embodiment (B) of the present invention described above, an organic semiconductor element having a high-definition pattern can be formed. Examples of the organic semiconductor element produced by the method for producing an organic semiconductor element according to an embodiment of the present invention include an organic layer, a light-emitting layer, and a cathode electrode of an organic EL element. In particular, the method for manufacturing an organic semiconductor device according to an embodiment of the present invention is applicable to manufacturing R, G, B light-emitting layers of organic EL devices requiring high-definition pattern accuracy.

The vapor deposition mask with a frame used for manufacturing the organic semiconductor element is not particularly limited as long as it satisfies the condition that the vapor deposition mask of embodiment (a) or embodiment (B) described above is fixed to the frame. The frame is not particularly limited as long as it is a member capable of supporting the vapor deposition mask, and for example, a metal frame, a ceramic frame, or the like can be used. Among these, the metal frame is preferable in that it is easily welded to the metal mask of the vapor deposition mask, and the influence of deformation or the like is small. Hereinafter, description will be given mainly on an example in which a metal frame is used as a frame. For example, as shown in fig. 20, a vapor deposition mask 200 with a metal frame in which 1 vapor deposition mask 100 is fixed to a metal frame 60 may be used, or as shown in fig. 21, a vapor deposition mask 200 with a metal frame in which a plurality of vapor deposition masks (4 vapor deposition masks in the illustrated embodiment) are fixed to a metal frame 60 in a vertical or horizontal arrangement (in the illustrated embodiment, in a horizontal arrangement). Fig. 20 and 21 are front views of a vapor deposition mask 200 with a metal frame according to an embodiment, as viewed from the resin mask 20 side.

The metal frame 60 is a substantially rectangular frame member, and has openings for exposing the openings 25 of the resin mask 20 provided in the finally fixed vapor deposition mask 100 on the vapor deposition source side. The material of the metal frame is not particularly limited, but a metal material having high rigidity, for example, SUS, invar alloy, or the like is preferable.

The thickness of the metal frame is not particularly limited, but is preferably about 10mm to 30mm in terms of rigidity and the like. The width between the inner peripheral end face of the opening of the metal frame and the outer peripheral end face of the metal frame is not particularly limited as long as the metal frame and the metal mask of the vapor deposition mask can be fixed to each other, and a width of about 10mm to 50mm can be exemplified.

Further, the reinforcing frame 65 and the like may be present in the opening of the metal frame in a range that does not interfere with the exposure of the opening 25 of the resin mask 20 constituting the vapor deposition mask 100. In other words, the opening of the metal frame 60 may be divided by a reinforcing frame or the like. In the embodiment shown in fig. 20, a plurality of reinforcing frames 65 extending in the lateral direction are arranged in the longitudinal direction, but a plurality of rows of reinforcing frames extending in the longitudinal direction may be arranged in the lateral direction instead of the reinforcing frames 65. In the embodiment shown in fig. 21, a plurality of reinforcing frames 65 extending in the longitudinal direction are arranged in the lateral direction, but a plurality of reinforcing frames extending in the lateral direction may be arranged in the longitudinal direction instead of the reinforcing frames 65 or together therewith. By using the metal frame 60 on which the reinforcing frame 65 is disposed, when a plurality of vapor deposition masks 100 according to embodiment (a) or embodiment (B) described above are aligned and fixed in the vertical direction and the horizontal direction on the metal frame 60, the vapor deposition masks can be fixed on the metal frame 60 even at the position where the reinforcing frame and the vapor deposition masks overlap.

The method of fixing the metal frame 60 and the vapor deposition mask 100 according to embodiment (a) or (B) described above is not particularly limited, and the fixing may be performed by spot welding using laser or the like, an adhesive, a screw, or the like.

Claims

1. A vapor deposition mask for simultaneously forming vapor deposition patterns of a plurality of screen portions,

the vapor deposition mask is formed by laminating a resin mask and a metal mask, wherein the resin mask has an opening of the resin mask necessary for forming vapor deposition patterns of a plurality of pictures,

the metal mask has a plurality of openings of the metal mask which are overlapped with openings of the resin mask necessary for forming at least 1 evaporation pattern of the whole screen.

2. The vapor deposition mask according to claim 1,

the openings of the plurality of metal masks are respectively overlapped with the openings of the resin mask necessary for forming the vapor deposition patterns of 2 or more screen parts.

3. The vapor deposition mask according to claim 1,

the openings of the plurality of metal masks are respectively overlapped with the openings of the resin mask necessary for forming the vapor deposition pattern of 1 screen.

4. The vapor deposition mask according to claim 1,

the thickness of the resin mask is in a range of 4 to 8 [ mu ] m.

5. The vapor deposition mask according to claim 1,

the size of the opening of the resin mask is 500 μm²Above and 1000 μm²The following ranges.

6. The vapor deposition mask according to claim 1,

the resin mask has an opening of the resin mask necessary for forming a vapor deposition pattern of 2 or more screen parts,

when the pitch at which the distance is shortest among the pitches of the openings of the resin mask necessary for forming the vapor deposition pattern of 1 screen part and the openings of the resin mask necessary for forming the vapor deposition pattern of another 1 screen part is set as the inter-screen pitch, the inter-screen pitch is longer than the pitch between the openings of the adjacent resin masks among the openings of the resin mask necessary for forming the vapor deposition pattern of 1 screen part.

7. The vapor deposition mask according to claim 6,

the interval between the screens is in the range of 1mm to 100 mm.

8. The vapor deposition mask according to claim 1,

a groove is formed between the aggregate of the openings of the resin mask necessary for forming the vapor deposition pattern of 1 screen part and the aggregate of the openings of the resin mask necessary for forming the vapor deposition pattern of the other 1 screen part.

9. The vapor deposition mask according to claim 1,

the openings of the plurality of metal masks are respectively overlapped with the openings of the resin masks arranged in both the longitudinal direction and the transverse direction.

10. The vapor deposition mask according to claim 1,

the openings of the plurality of metal masks are respectively overlapped with the openings of the resin masks arranged only in any one of the longitudinal direction and the transverse direction.

11. The vapor deposition mask according to claim 1,

the openings of the plurality of resin masks respectively overlapping the openings of the plurality of metal masks are arranged in a plurality of rows in the longitudinal direction, and the openings of the resin masks between adjacent rows are arranged offset from each other in the longitudinal direction, or a plurality of rows are arranged in the transverse direction, and the openings of the resin masks between adjacent rows are arranged offset from each other in the transverse direction.

12. The vapor deposition mask according to claim 1,

the openings of the plurality of metal masks are respectively overlapped with a plurality of sets of openings of the resin masks arranged in parallel in either or both of the vertical and horizontal directions, the openings being necessary for forming the vapor deposition patterns of 1 screen.

13. A vapor deposition mask comprising a resin mask and a metal mask laminated together,

the resin mask has a plurality of openings of the resin mask necessary for forming a vapor deposition pattern,

the metal mask has 1 opening of the metal mask overlapping with the openings of all the resin masks necessary for forming the vapor deposition pattern.

14. The vapor deposition mask according to claim 13,

the plurality of openings of the resin mask necessary for forming the vapor deposition pattern in the vapor deposition mask are openings of the resin mask necessary for forming the vapor deposition pattern of 2 or more screen parts.

15. The vapor deposition mask according to claim 13,

the plurality of openings of the resin mask necessary for forming the vapor deposition pattern in the vapor deposition mask are openings of the resin mask necessary for forming the vapor deposition pattern for 1 screen.

16. The vapor deposition mask according to claim 13,

the thickness of the resin mask is in a range of 4 to 8 [ mu ] m.

17. The vapor deposition mask according to claim 13,

18. The vapor deposition mask according to claim 13,

19. The vapor deposition mask according to claim 18,

the interval between the screens is in the range of 1mm to 100 mm.

20. The vapor deposition mask according to claim 13,

21. The vapor deposition mask according to claim 13,

the openings of the 1 metal mask overlap the openings of the plurality of resin masks arranged in both the vertical and horizontal directions.

22. The vapor deposition mask according to claim 13,

the openings of the 1 metal mask overlap the openings of the plurality of resin masks arranged in a row only in either one of the vertical and horizontal directions.

23. The vapor deposition mask according to claim 13,

the openings of the plurality of resin masks overlapping the openings of the 1 metal mask are arranged in a plurality of rows in the longitudinal direction, and the openings of the resin masks between adjacent rows are arranged offset from each other in the longitudinal direction, or a plurality of rows are arranged in the transverse direction, and the openings of the resin masks between adjacent rows are arranged offset from each other in the transverse direction.

24. A method for manufacturing the vapor deposition mask according to claim 1, comprising:

the openings of the resin mask are formed so as to overlap with the openings of the plurality of metal masks, respectively, by irradiating the metal masks with laser light.

25. A method for manufacturing the vapor deposition mask according to claim 13, comprising:

the openings of the plurality of resin masks are formed so as to overlap the openings of the 1 metal mask by irradiating laser light from the metal mask side.

26. A method for manufacturing a vapor deposition mask according to claim 1, the method comprising:

preparing a laminate of a metal plate and a resin plate;

forming openings of the plurality of metal masks on the metal plate; and

and forming an opening of the resin mask on the resin plate.

27. The method for manufacturing a vapor deposition mask according to claim 26, wherein,

in the above step of preparing a laminate of the metal plate and the resin plate, the metal plate is coated with a resin layer.

28. The method for manufacturing a vapor deposition mask according to claim 26, wherein,

the metal plate and the resin plate are bonded by the above-described step of preparing a laminate of the metal plate and the resin plate.

29. A method for manufacturing a vapor deposition mask according to claim 13, the method comprising the steps of:

preparing a laminate of a metal plate and a resin plate;

forming openings of the 1 metal mask on the metal plate; and

and forming openings of the plurality of resin masks on the resin plate.

30. The method for manufacturing a vapor deposition mask according to claim 29, wherein,

31. The method for manufacturing a vapor deposition mask according to claim 29, wherein,

32. A method for manufacturing a vapor deposition mask for simultaneously forming vapor deposition patterns for a plurality of screen portions, the method comprising:

preparing a laminate of a resin plate and a metal plate;

etching a part of the metal plate of the laminate; and

a step of forming openings necessary for forming vapor deposition patterns for a plurality of screen portions on the resin plate of the laminate by irradiating the laminate with a laser beam from the metal plate side,

after the 3 steps, the metal plate of the laminate has a plurality of etched portions that overlap with the openings of the openings that are necessary for forming the vapor deposition patterns for at least 1 screen as a whole.

33. The method for manufacturing a vapor deposition mask according to claim 32, wherein,

34. The method for manufacturing a vapor deposition mask according to claim 32, wherein,

35. A method for manufacturing a vapor deposition mask, comprising:

preparing a laminate of a resin plate and a metal plate;

etching a part of the metal plate of the laminate; and

a step of forming a plurality of openings necessary for forming a vapor deposition pattern in the resin plate of the laminate by irradiating the laminate with a laser beam from the metal plate side,

after the 3 steps, the metal plate of the laminate has 1 etched portion overlapping with all of the plurality of opening portions necessary for forming a vapor deposition pattern.

36. The method for manufacturing a vapor deposition mask according to claim 35, wherein,

37. The method for manufacturing a vapor deposition mask according to claim 35, wherein,

38. A vapor deposition mask preparation body used in the method for manufacturing a vapor deposition mask according to any one of claims 24 to 37, the vapor deposition mask preparation body being a laminate of the metal mask and a resin plate.

39. A method for forming a pattern by vapor deposition using the vapor deposition mask according to claim 1 or 13.

40. A method for manufacturing an organic semiconductor element, using the vapor deposition mask according to claim 1 or 13.