CN107516700A - Nitride semiconductor structure and semiconductor light emitting element - Google Patents

Abstract

The invention relates to a nitride semiconductor structure and a semiconductor light-emitting element. The nitride semiconductor structure is mainly provided with a first type doped semiconductor layer and a second type doped semiconductor layer on a substrate, a light emitting layer is arranged between the first type doped semiconductor layer and the second type doped semiconductor layer, the light emitting layer is provided with a multi-quantum well structure, the multi-quantum well structure comprises a plurality of well layers and barrier layers which are alternately stacked, a well layer is arranged between every two barrier layers, and the barrier layers are Al_xIn_yGa_1‑x‑yN, x and y satisfy 0<x<1，0<y<1，0<x+y<1, the well layer is In_zGa_1‑zN，0<z<1. The semiconductor light-emitting device at least comprises the nitride semiconductor structure, and a first type electrode and a second type electrode which are matched with each other to provide electric energy. Thus, the quaternary composition conditions can be adjusted to provide lattice-matched barrier and well layers, which improve the lattice mismatchAnd a grown crystal defect phenomenon.

Description

Nitride semiconductor structure and semiconductor light emitting element

The patent application of the present invention is a divisional application of the invention patent application named "Nitride Semiconductor Structure and Semiconductor Light-Emitting Element" with the application date of January 25, 2013 and the application number 201310030319.4.

technical field

The present invention relates to a nitride semiconductor structure and a semiconductor light-emitting element, in particular to a nitrogen compound that uses a barrier layer of quaternary aluminum indium gallium nitride and a well layer of ternary indium gallium nitride in a multiple quantum well structure A compound semiconductor structure and a semiconductor light-emitting element belong to the technical field of semiconductors.

Background technique

In general, a nitride light-emitting diode is first formed on a substrate with a buffer layer, and then epitaxially grows an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer on the buffer layer; then, using lithography and etching processes removing part of the p-type semiconductor layer and part of the light-emitting layer until a part of the n-type semiconductor layer is exposed; then, forming an n-type electrode and a p-type electrode on the exposed part of the n-type semiconductor layer and the p-type semiconductor layer respectively , and produce a light-emitting diode; wherein, the light-emitting layer has a nitride semiconductor multiple quantum well structure (MQW), and the multiple quantum well structure includes well layers (well) and barrier layers (barrier) that are alternately arranged in a repeated manner, because The well layer has a lower energy gap than the barrier layer, so that each well layer in the above-mentioned multiple quantum well structure can limit electrons and holes in quantum mechanics, causing electrons and holes to flow from the n-type semiconductor layer and p Type semiconductor layer is injected and combined in the well layer to emit light particles.

At present, there are about 1 to 30 well layers or barrier layers in the multiple quantum well structure. The barrier layer is usually formed of gallium nitride GaN, and the well layer is composed of indium gallium nitride InGaN; However, the above-mentioned multiple quantum well structure has a lattice mismatch of about 10-15% between the InGaN and GaN lattices, resulting in strong stress between the lattices, making the multiple quantum well structure There is a piezoelectric field (piezoelectric field), and in the process of growing InGaN, the higher the indium content, the larger the piezoelectric field generated, and the greater the impact on the crystal structure , and the greater the thickness of the growth, the greater the accumulated stress. When the crystal structure grows beyond a certain critical thickness (critical thickness), the crystal structure can no longer bear the stress, and a larger Large defect structures (such as V-shaped defects) make the general well layer have a certain thickness limit, generally about 3nm.

In addition, the above-mentioned multiple quantum well structure will also cause serious inclination or bending of the energy band due to the existence of a strong polarization electric field, causing electrons and holes to be separated and confined on both sides of the well layer, making the wave functions of electrons and holes (wavefunction) The overlap rate in space is reduced, and the radiation recombination rate (radiative recombination rate) and internal quantum efficiency (IQE) of electrons and holes are reduced.

In view of the fact that the existing nitride semiconductor light-emitting elements still have many deficiencies in actual implementation, it is still one of the problems to be solved urgently in this field to develop a novel nitride semiconductor structure and semiconductor light-emitting element.

Contents of the invention

In order to solve the above technical problems, the main purpose of the present invention is to provide a nitride semiconductor structure, which uses a barrier layer of quaternary aluminum indium gallium nitride and a well layer of ternary indium gallium nitride in the light emitting layer to improve the crystallinity The stress effect caused by the lattice mismatch makes the well layer have a thickness of 3.5nm-7nm, and at the same time, it can provide better carrier confinement to improve the internal quantum efficiency.

Another object of the present invention is to provide a semiconductor light-emitting element, which at least includes the above-mentioned nitride semiconductor structure, so that the semiconductor light-emitting element can obtain good luminous efficiency.

In order to achieve the above object, the present invention provides a nitride semiconductor structure, which is mainly configured with a first-type doped semiconductor layer and a second-type doped semiconductor layer on the substrate, between the first-type doped semiconductor layer and the second-type doped semiconductor layer. A light-emitting layer is disposed between the second-type doped semiconductor layers, the light-emitting layer has a multiple quantum well structure, and the multiple quantum well structure includes a plurality of well layers and barrier layers stacked alternately with each other, and every two layers There is a well layer between the barrier layers, the barrier layer is Al _x In _y Ga _1-xy N, where x and y satisfy 0<x<1, 0<y<1, 0<x+ y<1, and the well layer is In _z Ga _1-z N, where 0<z<1.

According to a specific embodiment of the present invention, preferably, in the above nitride semiconductor structure, the well layer has a thickness of 3.5nm-7nm.

According to a specific embodiment of the present invention, preferably, in the above-mentioned nitride semiconductor structure, the barrier layer has a thickness of 5nm-12nm; and preferably, in the above-mentioned nitride semiconductor structure, the barrier layer can be doped Doped with the first-type dopant with a concentration of 10 ¹⁶ -10 ¹⁸ cm ^-3 ; the barrier layer can reduce the carrier shielding effect and increase the carrier confinement effect.

According to a specific embodiment of the present invention, preferably, in the above-mentioned nitride semiconductor structure, a hole-providing layer can be arranged between the light-emitting layer and the second-type doped semiconductor layer; more preferably, the The hole-providing layer is indium gallium nitride In _x Ga _1-x N, where 0<x<1, and the hole-providing layer can be doped with a second-type dopant with a concentration greater than 10 ¹⁸ cm ^-3 , for example Magnesium or zinc, preferably magnesium, to increase the concentration of holes.

According to a specific embodiment of the present invention, preferably, in the above-mentioned nitride semiconductor structure, the hole providing layer may be doped with a fourth main group element at a concentration of 10 ¹⁷ -10 ²⁰ cm ^-3 , thereby providing a more More holes enter the light-emitting layer, thereby increasing the combination of electrons and holes.

According to a specific embodiment of the present invention, preferably, in the above-mentioned nitride semiconductor structure, the energy gap of the hole providing layer is larger than the energy gap of the well layer of the multiple quantum well structure, by allowing the holes to easily enter the well layer and preventing The escape of electrons makes it easier for electrons and holes to be confined in the well layer, so as to increase the probability of recombination of electron-hole pairs.

According to a specific embodiment of the present invention, preferably, in the above-mentioned nitride semiconductor structure, a first-type carrier blocking layer may be disposed between the light-emitting layer and the first-type doped semiconductor layer, and the second The type-one carrier blocking layer is preferably AlxGa1 _{- xN} , where 0<x<1.

According to a specific embodiment of the present invention, preferably, in the above-mentioned nitride semiconductor structure, a second-type carrier blocking layer is arranged between the hole providing layer and the second-type doped semiconductor layer, and the first The second-type carrier blocking layer is preferably AlxGa1 _{- xN} , where 0<x<1. Therefore, using the characteristic that the energy bandgap of AlGaN containing aluminum is higher than that of GaN can not only increase the energy band range of the nitride semiconductor, but also make the carrier can be confined in the multiple quantum well structure, and improve the electron-hole recombination. chance, and then achieve the effect of improving luminous efficiency.

The present invention also provides a semiconductor light emitting element, which at least includes:

a substrate;

a first-type doped semiconductor layer disposed on the substrate;

A light-emitting layer, which is configured on the first-type doped semiconductor layer, the light-emitting layer has a multiple quantum well structure, and the multiple quantum well structure includes a plurality of well layers and barrier layers stacked alternately, and each There is a well layer between the two barrier layers, the barrier layer is Al _x In _y Ga _1-xy N, wherein x and y satisfy 0<x<1, 0<y<1, 0< The value of x+y<1, the well layer is In _z Ga _1-z N, where 0<z<1;

a second-type doped semiconductor layer disposed on the light-emitting layer;

a first-type electrode disposed on the first-type doped semiconductor layer in ohmic contact; and

A second-type electrode is configured on the second-type doped semiconductor layer in ohmic contact.

The semiconductor light-emitting element of the present invention at least includes the above-mentioned nitride semiconductor structure, and two first-type electrodes and second-type electrodes that cooperate to provide electric energy; thus, using the barrier layer of quaternary aluminum indium gallium nitride and The well layer of ternary InGaN has the characteristics of the same indium element, and the quaternary composition conditions can be adjusted to provide a lattice-matched composition, so that the lattice constants of the barrier layer and the well layer are relatively similar, which can not only improve the traditional nitride The crystal defects in the well layer of indium gallium and the barrier layer of gallium nitride due to lattice mismatch can also improve the stress effect caused by lattice mismatch, so that the well layer of the nitride semiconductor structure of the present invention It has a thickness of 3.5nm-7nm, preferably 4nm-5nm; at the same time, by increasing the addition of Al elements, it can provide better carrier confinement in the barrier layer, effectively confining electron holes in the well layer, thereby improving the internal quantum Efficiency, so that the semiconductor light-emitting element obtains good luminous efficiency.

Furthermore, the barrier layer of quaternary AlInGaN and the well layer of ternary InGaN can improve the stress effect caused by lattice mismatch, thereby effectively reducing the pressure of the piezoelectric field in the multiple quantum well structure. Produced to effectively suppress the piezoelectric effect and improve the internal quantum efficiency, so that the semiconductor light-emitting element can obtain better luminous efficiency.

Description of drawings

FIG. 1 is a schematic cross-sectional view of a nitride semiconductor structure provided by a preferred embodiment of the present invention.

Fig. 2 is a schematic cross-sectional view of a semiconductor light-emitting element made of a nitride semiconductor structure according to a preferred embodiment of the present invention.

Description of main component symbols:

1 Substrate 2 Buffer layer

3 first type doped semiconductor layer 31 first type electrode

4 Type I carrier blocking layer

5 luminous layer

51 well layer 52 barrier layer

6 Type II carrier blocking layer

7 Second-type doped semiconductor layer 71 Second-type electrode

8 hole supply layer

detailed description

The purpose of the present invention and its structural design and functional advantages will be described according to the following drawings and preferred embodiments, so as to have a more in-depth and specific understanding of the present invention.

First of all, in the description of the following embodiments, it should be understood that when it is indicated that a layer (or film) or a structure is disposed "on" or "under" another substrate, another layer (or film), or another structure , which can be "directly" located on other substrates, layers (or films), or another structure, or have more than one intermediate layer between them in an "indirect" manner. The location of each layer can be described with reference to the drawings.

Please refer to FIG. 1, which is a schematic cross-sectional view of a nitride semiconductor structure provided by a preferred embodiment of the present invention, which is mainly configured with a first-type doped semiconductor layer 3 and a second-type doped semiconductor layer on a substrate 1. Layer 7, a light-emitting layer 5 is disposed between the first-type doped semiconductor layer 3 and the second-type doped semiconductor layer 7, the light-emitting layer 5 has a multiple quantum well structure, and the multiple quantum well structure includes a plurality of alternately stacked wells Layer 51 and barrier layer 52, and there is a well layer 51 between every two barrier layers 52, the barrier layer 52 is made of a quaternary material represented by the chemical formula Al _x In _y Ga _1-xy N, wherein x and y satisfy 0<x<1, 0<y<1, 0<x+y<1, and the well layer 51 is made of the material represented by the chemical formula In _z Ga _1-z N, where 0<z<1, and the well Layer 51 has a thickness of 3.5nm-7nm, preferably 4nm-5nm, and barrier layer 52 has a thickness of 5nm-12nm; wherein barrier layer 52 can be doped with a concentration of 10 ¹⁶ -10 ¹⁸ cm ^-3 of the first Type dopant (such as silicon or germanium), so that the barrier layer 52 can reduce the carrier shielding effect, so as to increase the carrier confinement effect.

In addition, the above-mentioned nitride semiconductor structure can be provided with a hole-providing layer 8 between the light-emitting layer 5 and the second-type doped semiconductor layer 7, wherein the hole-providing layer 8 is indium gallium nitride In _x Ga _1-x N, Where 0<x<1, and the hole-providing layer 8 is doped with a second-type dopant with a concentration greater than 10 ¹⁸ cm ^-3 , such as magnesium or zinc, preferably magnesium; moreover, the hole-providing layer 8 can be doped with Doped with the fourth main group element with a concentration of 10 ¹⁷ -10 ²⁰ cm ^-3 , preferably carbon, using carbon (group 4A) to replace the pentavalent nitrogen atom, so that the hole providing layer 8 can have a high hole concentration, by This provides more holes to enter the light-emitting layer 5, thereby increasing the combination of electron holes; moreover, the energy gap of the hole providing layer 8 is greater than the energy gap of the well layer 51 of the multiple quantum well structure, thus allowing the holes enter the well layer and prevent electrons from escaping into the second-type doped semiconductor layer 7 .

In addition, a first-type carrier blocking layer 4 may also be disposed between the light-emitting layer 5 and the first-type doped semiconductor layer 3, and the first-type carrier blocking layer 4 is preferably represented by the chemical formula AlxGa1 _{- xN} material, wherein 0<x<1; and a second-type carrier blocking layer 6 is arranged between the hole providing layer 8 and the second-type doped semiconductor layer 7, and the second-type carrier blocking layer 6 is composed of the chemical formula Al _x Ga _1-x N, where 0<x<1; thus, using AlGaN containing aluminum, which has a higher energy band gap than GaN, can not only increase the energy band range of nitride semiconductors, but also The carrier can be confined in the multiple quantum well structure, and the probability of electron-hole recombination is increased, thereby achieving the effect of increasing luminous efficiency.

Furthermore, a buffer layer 2 may be arranged between the substrate 1 and the first-type doped semiconductor layer 3, and the buffer layer 2 is made of a material represented by the chemical formula Al _X Ga _1-x N, wherein 0<x<1; Layer 2 is used to improve the problem of lattice mismatch (lattice mismatch) caused by the growth of the first-type doped semiconductor layer 3 on the heterogeneous substrate 1, and the material of the buffer layer 2 can also be, for example, GaN, InGaN, SiC, ZnO, etc., and the formation method can be, for example, low-temperature epitaxial growth at a temperature of 400-900°C.

When the nitride semiconductor structure of the above-mentioned embodiment is actually implemented and used, first, the material of the substrate 1 can be, for example, sapphire (sapphire), silicon, SiC, ZnO or GaN substrate, etc., and the material of the first-type doped semiconductor layer 3 can be, for example, It is silicon or germanium-doped gallium nitride series material, and the material of the second-type doped semiconductor layer 7 can be, for example, magnesium or zinc-doped gallium nitride series material, wherein the first-type doped semiconductor layer 3, the second-type doped semiconductor layer 7 The method for forming the second-type doped semiconductor layer 7 can be, for example, metalorganic chemical vapor deposition (MOCVD); and it should be noted that the above-mentioned well layer 51 and barrier layer 52 are preferably prepared by using organic Deposited by metal vapor deposition or molecular beam epitaxy (MBE), generally using a gas mixture containing low alkyl indium and gallium compounds; the barrier layer 52 is formed by depositing at a temperature of 850-1000° C., and The well layer 51 is usually formed at a temperature of 500-950° C.; thus, since the multiple quantum well structure includes the barrier layer 52 of AlInGaN and the well layer 51 of InGaN, it has the same The indium element makes the lattice constants of the barrier layer 52 and the well layer 51 relatively similar, which can improve the crystal defects caused by the lattice mismatch caused by the barrier layer of traditional gallium nitride and the well layer of indium gallium nitride. Phenomenon, and since the inter-lattice stress is mainly caused by the mismatch of lattice constants between materials, it can also improve the stress effect caused by lattice mismatch, making the nitride semiconductor structure of the present invention The well layer 51 has a thickness of 3.5nm-7nm, preferably 4nm-5nm.

Furthermore, the barrier layer 52 of quaternary AlInGaN and the well layer 51 of InGaN can improve the stress effect caused by lattice mismatch, thereby effectively reducing the generation of piezoelectric field in the multiple quantum well structure , so that the phenomenon of energy band bending and inclination is improved to a considerable extent, and then achieves the effect of effectively suppressing the piezoelectric effect and improving the internal quantum efficiency.

Please refer to FIG. 2, the above-mentioned nitride semiconductor structure can be applied to semiconductor light-emitting elements. FIG. 2 is a schematic cross-sectional view of a semiconductor light-emitting element made of a nitride semiconductor structure according to a preferred embodiment of the present invention. Light emitting elements include at least:

a substrate 1;

A first-type doped semiconductor layer 3, which is disposed on the substrate 1; wherein, the material of the first-type doped semiconductor layer 3 can be, for example, silicon or germanium-doped gallium nitride series materials;

A light-emitting layer 5, which is disposed on the first-type doped semiconductor layer 3, the light-emitting layer 5 has a multiple quantum well structure, and the multiple quantum well structure includes a plurality of well layers 51 and barrier layers 52 stacked alternately, and each There is a well layer 51 between the two barrier layers 52, and the barrier layer 52 is composed of a material represented by the chemical formula Al _x In _y Ga _1-xy N, wherein x and y satisfy 0<x<1, 0<y<1 , the value of 0<x+y<1, and the well layer 51 is made of a material represented by the chemical formula In _z Ga _1-z N, wherein 0<z<1, and the well layer 51 has a thickness of 3.5nm-7nm, preferably 4nm-5nm;

A second-type doped semiconductor layer 7, which is disposed on the light-emitting layer 5, and the material of the second-type doped semiconductor layer 7 can be, for example, magnesium or zinc-doped gallium nitride series materials;

a first-type electrode 31, which is configured on the first-type doped semiconductor layer 3 in an ohmic contact; and

A second-type electrode 71, which is arranged on the second-type doped semiconductor layer 7 in ohmic contact; wherein, the first-type electrode 31 and the second-type electrode 71 cooperate to provide electric energy, and the following materials can be used, but not limited to Made of these materials: titanium, aluminum, gold, chromium, nickel, platinum and alloys thereof, etc.; its production method is well known to those skilled in the art, and is not the focus of the present invention, therefore, it is not repeated in the present invention .

In addition, a first-type carrier blocking layer 4 made of AlxGa1 _{- xN} material can be disposed between the light-emitting layer 5 and the first-type doped semiconductor layer 3, where 0<x<1; and the light-emitting layer 5 A second-type carrier blocking layer 6 made of AlxGa1 _{- xN} material can also be arranged between the second-type doped semiconductor layer 7, where 0<x<1; thus, using AlGaN containing aluminum The energy band gap of GaN is higher than that of GaN, which not only increases the energy band range of nitride semiconductors, but also allows carriers to be confined in the multiple quantum well structure, increasing the probability of electron-hole recombination, thereby achieving the goal of increasing luminous efficiency. effect.

Furthermore, a buffer layer 2 made of AlxGa1 _-xN can be disposed between the substrate 1 and the first-type doped semiconductor layer 3, where 0< _x <1, to improve the performance of the first-type doped semiconductor layer 3. The problem of lattice constant mismatch caused by growth on the heterogeneous substrate 1, and the material of the buffer layer 2 can also be GaN, InGaN, SiC, ZnO, etc., for example.

Thus, it can be known from the description of the above nitride semiconductor structure implementation that the semiconductor light-emitting element of the present invention has the characteristics of the same indium element through the barrier layer 52 of the quaternary aluminum indium gallium nitride and the well layer 51 of the ternary indium gallium nitride. , by adjusting the quaternary composition conditions to provide a lattice-matched composition, the lattice constants of the barrier layer 52 and the well layer 51 are relatively similar, which can not only improve the barrier layer of traditional gallium nitride and the well layer of indium gallium nitride The crystal defect phenomenon caused by lattice mismatch, and because the stress between lattices is mainly caused by the mismatch of lattice constants between materials, it can also improve the stress caused by lattice mismatch function, so that the well layer 51 of the nitride semiconductor structure of the present invention has a thickness of 3.5nm-7nm, preferably 4nm-5nm; at the same time, it can also increase the addition of Al elements to provide better carrier confinement of the barrier layer 52, effectively The electron holes are effectively confined in the well layer 51, thereby improving the internal quantum efficiency, so that the semiconductor light-emitting element can obtain good luminous efficiency.

Furthermore, the barrier layer 52 of the quaternary AlInGaN and the well layer 51 of the ternary InGaN can improve the stress effect caused by lattice mismatch, thereby effectively reducing the piezoelectric field in the multiple quantum well structure The generation of it can effectively suppress the piezoelectric effect and improve the internal quantum efficiency, so that the semiconductor light-emitting element can obtain better luminous efficiency.

To sum up, the nitride semiconductor structure and the semiconductor light-emitting device of the present invention can indeed achieve the expected use effects through the above-disclosed embodiments.

The drawings and descriptions disclosed above are only preferred embodiments of the present invention, and are not intended to limit the protection scope of the present invention; other equivalent changes or modifications made by those skilled in the art based on the features of the present invention are all It should be regarded as not departing from the protection scope of the present invention.

Claims (10)

1. A nitride semiconductor structure, comprising: a first type doped semiconductor layer; A light-emitting layer, including a multiple quantum well structure; An AlGaN based (AlGaN based) second-type carrier barrier layer; A second-type doped semiconductor layer, wherein the AlGaN-based second-type carrier blocking layer is disposed between the second-type doped semiconductor layer and the light-emitting layer, and the light-emitting layer is disposed on the AlGaN-based first Between the second-type carrier barrier layer and the first-type doped semiconductor layer, and the multiple quantum well structure includes a plurality of GaN-based barrier layers and a plurality of InGaN-based well layers stacked alternately; and An InGaN-based hole-supplying layer, the InGaN-based hole-supplying layer disposed between the light-emitting layer and the AlGaN-based second-type carrier blocking layer, the AlGaN-based second-type carrier blocking layer It is arranged between the second-type doped semiconductor layer and the InGaN-based hole-providing layer, and the InGaN-based hole-providing layer is doped with a second-type dopant with a concentration greater than 10 ¹⁸ cm ^-3 and a concentration greater than 10 ¹⁷ cm ^-3 group four elements. 2. A nitride semiconductor structure, comprising: a first type doped semiconductor layer; A light-emitting layer, including a multiple quantum well structure; an InGaN based hole providing layer; and A second-type doped semiconductor layer, wherein the light-emitting layer is disposed between the first-type doped semiconductor layer and the InGaN-based hole-providing layer, and the InGaN-based hole-providing layer is disposed between the light-emitting layer and the InGaN-based hole-providing layer Between the second-type doped semiconductor layers, the multiple quantum well structure includes a plurality of GaN-based barrier layers and a plurality of InGaN-based well layers alternately stacked, and the energy gap of the InGaN-based hole providing layer is greater than The energy gap of the InGaN-based well layer of the multiple quantum well structure, the InGaN-based hole provider layer is doped with a second-type dopant with a concentration greater than 10 ¹⁸ cm ^-3 and a dopant with a concentration greater than 10 ¹⁷ cm ^-3 family elements. 3. A nitride semiconductor structure, comprising: a first type doped semiconductor layer; An AlGaN based (AlGaN based) first-type carrier barrier layer; A light-emitting layer, including a multiple quantum well structure; An AlGaN based (AlGaN based) second-type carrier barrier layer; A second-type doped semiconductor layer, wherein the light-emitting layer is disposed between the first-type doped semiconductor layer and the second-type doped semiconductor layer, and the AlGaN-based first-type carrier blocking layer is disposed on the Between the first-type doped semiconductor layer and the light-emitting layer, the AlGaN-based second-type carrier barrier layer is arranged between the second-type doped semiconductor layer and the light-emitting layer, and the multiple quantum well structure includes alternating stacked multiple GaN based barrier layers and multiple InGaN based well layers; and An InGaN-based hole-supplying layer, the InGaN-based hole-supplying layer disposed between the light-emitting layer and the AlGaN-based second-type carrier blocking layer, the AlGaN-based second-type carrier blocking layer It is disposed between the InGaN-based hole-providing layer and the second-type doped semiconductor layer, and the InGaN-based hole-providing layer is doped with a second-type dopant with a concentration greater than 10 ¹⁸ cm ^-3 and a concentration greater than 10 ¹⁷ cm ^-3 group four elements. 4. A nitride semiconductor structure, comprising: a first type doped semiconductor layer; A light-emitting layer comprising a multiple quantum well structure, wherein the multiple quantum well structure comprises a plurality of GaN-based barrier layers and a plurality of GaN-based well layers including indium stacked alternately; a second-type doped semiconductor layer, wherein the light-emitting layer is disposed between the first-type doped semiconductor layer and the second-type GaN-based hole-providing layer; and A GaN-based second-type hole-providing layer including indium is arranged between the light-emitting layer and the second-type doped semiconductor layer, and the GaN-based second-type hole-providing layer including indium is doped with The second-type dopant with a concentration greater than 10 ¹⁸ cm ^-3 and the group IV elements with a concentration greater than 10 ¹⁷ cm ^-3 . 5. The nitride semiconductor structure according to any one of claims 1-4, wherein each of the GaN-based barrier layers of the multiple quantum well structure is doped with a concentration of 10 ¹⁶ to 10 ¹⁸ cm ^{− 3} is the first type of dopant. 6. The nitride semiconductor structure according to claim 2 or 4, further comprising an AlGaN-based (AlGaN based) second-type carrier barrier layer disposed between the second-type doped semiconductor layer and the light-emitting layer between. 7. The nitride semiconductor structure according to claim 1, 2 or 4, further comprising an AlGaN-based (AlGaNbased) first-type carrier barrier layer disposed between the first-type doped semiconductor layer and the light-emitting layer between. 8. The nitride semiconductor structure according to claim 1, 3 or 4, wherein the energy gap of the InGaN-based hole providing layer is larger than the energy gap of the InGaN-based well layer of the multiple quantum well structure. 9. The nitride semiconductor structure according to any one of claims 1-4, wherein a GaN-based barrier layer of the multiple quantum well structure is located between the InGaN-based hole providing layer and the multiple quantum well structure A layer of InGaN base between the well layers. 10. The nitride semiconductor structure according to any one of claims 1-4, wherein the group IV element doped in the InGaN-based hole-providing layer comprises carbon.