CN107404698A - Mems structure - Google Patents
Mems structure Download PDFInfo
- Publication number
- CN107404698A CN107404698A CN201610331737.0A CN201610331737A CN107404698A CN 107404698 A CN107404698 A CN 107404698A CN 201610331737 A CN201610331737 A CN 201610331737A CN 107404698 A CN107404698 A CN 107404698A
- Authority
- CN
- China
- Prior art keywords
- mems structure
- vibrating diaphragm
- movable member
- substrate
- structure according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000003990 capacitor Substances 0.000 claims abstract description 14
- 238000013016 damping Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 93
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 9
- 239000000306 component Substances 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Micromachines (AREA)
Abstract
Disclose a kind of MEMS structure.The MEMS structure includes：Substrate；Movable member, the movable member are located on the substrate；Fixed component, the fixed component are located on the movable member, and relative to each other with the movable member, to form capacitor plate；Interconnecting member, including the Part I of aspect identical with the fixed component and the Part II that extends downwardly from the Part I and be connected with movable member；And guard block, the guard block and the movable member are spaced a predetermined distance from, so as to provide protection when the movable member motional amplitude is more than the preset distance, extend the service life of the MEMS structure.
Description
Technical field
The present invention relates to MEMS (MEMS) structure, more particularly, to including vibrating diaphragm
MEMS structure.
Background technology
MEMS is grown up in microelectric technique basis using micro fabrication making
Electromechanical devices, be widely used as sensor and actuator.For example, MEMS can
To be silicon capacitor microphone.Silicon capacitor microphone generally includes substrate, back pole plate and vibrating diaphragm, wherein
Vibrating diaphragm is the core component of silicon capacitor microphone, and the vibrating diaphragm delicately responds sound pressure signal and by it turn
Turn to electric signal.In silicon capacitor microphone, back pole plate is fixed component, and vibrating diaphragm is movable member.
The all or part of vibrating diaphragm can be with free vibration.It is similar with silicon capacitor microphone, based on capacitance characteristic
MEMS sensor and most MEMS actuator include fixed component and movable member.
In the prior art, in order to improve the sensitivity of MEMS structure movable member, Fig. 1 a are taken
With the structure shown in 1b.Fig. 1 a and 1b show the top view of the MEMS structure according to prior art
And sectional view.The MEMS structure is, for example, silicon capacitor microphone, including substrate 110, positioned at substrate
Vibrating diaphragm layer 120 on 110, the supporting layer 130 on the Part II of vibrating diaphragm layer 120, it is located at
Back pole plate 140 and interconnecting member 150 on supporting layer 130, the vibrating diaphragm layer 120 include first
Part 121 and Part II 122, the interconnecting member 150 include and 140 identical aspect of back pole plate
Part I and the Part II that extends downwardly from the Part I and be connected with vibrating diaphragm layer 120,
Mechanical connection and the electrical connection of vibrating diaphragm layer 120 are so realized by interconnecting member 150, makes vibrating diaphragm layer
Part I 121 is able to vacantly, improve the sensitivity that MEMS movable members are, for example, vibrating diaphragm layer.
In above-mentioned MEMS structure, sensitivity is improved because vibrating diaphragm layer is able to hanging, but work as
Vibrating diaphragm layer by during the impact moved downward often because amplitude is excessive causes damaging for vibrating diaphragm layer.
The content of the invention
In view of the above problems, it is an object of the invention to provide a kind of MEMS structure of service life length.
In order to solve the above technical problems, the present invention includes：
Substrate；
Movable member, the movable member are located on the substrate；
Fixed component, the fixed component are located on the movable member, and with the movable part
Part is relative to each other, to form capacitor plate；And
Interconnecting member, including the Part I of aspect identical with the fixed component and from described first
The Part II that part extends downwardly and is connected with movable member.
Preferably, the MEMS structure also includes：
Guard block, the guard block and the movable member are spaced a predetermined distance from, so as to described
Movable member motional amplitude provides protection when being more than the preset distance.
Preferably, the MEMS structure is MEMS microphone, the movable member and fixed component
The vibrating diaphragm layer and back pole plate of respectively described MEMS microphone, wherein, the substrate includes the operatic tunes,
The vibrating diaphragm layer is by the operatic tunes and ft connection to receive voice signal.
Preferably, the vibrating diaphragm layer is all or part of hanging above the operatic tunes.
Preferably, the guard block is connected with the interconnecting member.
Preferably, the interconnecting member extends to the lower section of the vibrating diaphragm layer, and the guard block is
It is fixed on the damping block of the interconnecting member Part II lower end.
Preferably, the guard block is that the substrate is located at what the periphery of the operatic tunes raised up
Part.
Preferably, the substrate includes the lateral extension portions extended from operatic tunes edge to operatic tunes center,
The guard block is located at the lateral extension portions.
Preferably, the guard block is generally a cylindrical or square column.
Preferably, described MEMS structure also includes between the substrate and the fixed component
Supporting layer, wherein, the Part I of the interconnecting member is at least in part on the supporting layer
Extend laterally.
According to the MEMS structure of the present invention, realizing that vibrating diaphragm layer is completely or partially outstanding using interconnecting member
Guard block is added on the basis of sky, physical life is extended again while realizing enhancing sensitivity.
Brief description of the drawings
By the description to the embodiment of the present invention referring to the drawings, it is of the invention above-mentioned and other
Objects, features and advantages will be apparent from, in the accompanying drawings：
The top view and sectional view of the MEMS structure according to prior art is shown respectively in Fig. 1 a and 1b.
Fig. 2 a and 2b be shown respectively MEMS structure according to a first embodiment of the present invention top view and
Sectional view.
The vertical view of MEMS structure according to a second embodiment of the present invention is shown respectively in Fig. 3 a, 3b and 3c
Figure, bottom view and sectional view.
Fig. 4 a to 4d be shown respectively MEMS structure according to a third embodiment of the present invention exploded view,
Top view, bottom view and sectional view.
In figure, 110, substrate；111st, the operatic tunes；112nd, lateral extension portions；120th, vibrating diaphragm layer；
121st, vibrating diaphragm layer Part I；122nd, vibrating diaphragm layer Part II；130th, supporting layer；140th, carry on the back
Pole plate；150th, interconnecting member；160th, guard block.
Embodiment
The present invention is more fully described hereinafter with reference to accompanying drawing.In various figures, identical element
Adopt and expression will be referred to by like reference numbers.For the sake of clarity, the various pieces in accompanying drawing are not pressed
Ratio is drawn.Furthermore, it is possible to some known parts are not shown.For brevity, Ke Yi
The semiconductor structure obtained described in one width figure after several steps.
It should be appreciated that in the structure of outlines device, it is referred to as when by one layer, a region positioned at another
One layer, another region " above " or when " top ", it can refer to located immediately at another layer, another
Above one region, or its between another layer, another region also comprising other layers or
Region.Also, if device overturn, this layer, region will be located at another layer, another
Individual region " following " or " lower section ".
If in order to describe, located immediately at another layer, another region above scenario, will to adopt herein
With " A is directly on B " or the form of presentation of " A is on B and abuts therewith ".In this Shen
Please in, " A is in B " represents that A is located in B, and A and B is abutted directly against.
In this application, term " MEMS structure " refers in each step of manufacture MEMS
The general designation of the whole MEMS structure formed, including all layers formed or region.
Describe hereinafter the present invention many specific details, such as the structure of device, material,
Size, handling process and technology, to be more clearly understood that the present invention.But as the skill of this area
Art personnel it will be appreciated that as, the present invention can not be realized according to these specific details.
The MEMS structure of the present invention will hereinafter be illustrated by taking silicon capacitor microphone as an example.It is appreciated that
Various types of MEMS with silicon capacitor microphone similar structures can be manufactured using similar method
Sensor and actuator.
Fig. 2 a and 2b be shown respectively MEMS structure according to a first embodiment of the present invention top view and
Line AA in sectional view, wherein Fig. 2 a shows the interception position of sectional view.The MEMS structure is for example
Silicon capacitor microphone, including substrate 110, substrate include the operatic tunes 111, positioned at substrate 110
On vibrating diaphragm layer 120, the upper back pole plate 140 positioned at vibrating diaphragm layer 120, positioned at back pole plate 140
Supporting layer 130 and interconnecting member 150 between substrate 110, the interconnecting member 150 include
Extended downwardly with the Part I of 140 identical aspect of back pole plate and from the Part I and and vibrating diaphragm
The Part II of the connection of layer 120, the machinery of vibrating diaphragm layer 120 is so realized by interconnecting member 150
Connection and electrical connection, enable vibrating diaphragm layer 120 hanging, improve the sensitivity of vibrating diaphragm layer 120.
Substrate 110 includes relative first surface and second surface.Substrate 110 is, for example, body silicon lining
Bottom, silicon-on-insulator (SOI) substrate etc., in certain embodiments, substrate 110 also include other knots
Structure layer, the functional layer of MEMS microphone are formed on the structure sheaf.
Vibrating diaphragm layer 120 is made up of conductive material (such as the polysilicon of doping, metal or alloy).
In the present embodiment, vibrating diaphragm layer 120 forms the mutual capacitance of MEMS microphone with back pole plate 140,
The first surface of vibrating diaphragm layer 120 is relative with the second surface of back pole plate 140, and second surface is exposed to
In the operatic tunes 111 formed in substrate 110.
The material of supporting layer 130 is, for example, silica or silicon nitride.The supporting layer 130 is for example set
On the periphery of back pole plate 140, in the present embodiment, supporting layer 130 is to be arranged on the He of substrate 110
Ring-type between back pole plate 140.
Interconnecting member 150 includes with the Part I of 140 identical aspect of back pole plate and from described first
The Part II that part extends downwardly and is connected with vibrating diaphragm layer 120, second of interconnecting member 150
Divide and set with the contact position of vibrating diaphragm layer 120 according to vibrating diaphragm obligatory point, for example, according to vibrating diaphragm 120
Acoustic characteristic analog result, if limitation point may in vibrating diaphragm layer close to middle position,
It is probably unpractical that additional restained beam is set in vibrating diaphragm layer.On the contrary, utilize the shape on supporting layer
Into interconnecting member 150, can be accurately defined interconnecting member 150 Part II contact vibrating diaphragm
The position of layer, so as in required diaphragm position, utilize the mechanical connection of interconnecting member 150
Position sets obligatory point.
Back pole plate 140 is made up of conductive material (such as the polysilicon of doping, metal or alloy).
In the present embodiment, vibrating diaphragm layer 120 and back pole plate 140 are circle.The of interconnecting member 150
A part is strip, and the periphery of back pole plate 140 has the opening corresponding with interconnecting member 150.
Thus, in the diverse location of circular periphery, interconnecting member 150 and back pole plate 140 contact branch respectively
The same surface of layer 130 is supportted, wherein interconnecting member 150 is located in the opening of back pole plate 140.Shake
Film layer 120 is able to vacantly, improve the sensitive of vibrating diaphragm layer 120 due to the fixation of interconnecting member 150
Degree.Back pole plate 140 has relative first surface and second surface, second surface and vibrating diaphragm layer 120
First surface it is relative, and space is formed, for accommodating the media such as air.In silicon electric capacity Mike
In wind, vibrating diaphragm layer 120 forms a pair of pole plates of electric capacity together with back pole plate 140.
At work, outside voice signal reaches the second table of vibrating diaphragm layer 120 via the operatic tunes 111
Face so that vibrating diaphragm layer 120 is vibrated with voice signal, so as to change vibrating diaphragm layer 120 and back pole plate
Electric capacity between 140, voice signal is changed into electric signal.
It is different from the existing MEMS structure shown in Fig. 1 a and 1b, according to a first embodiment of the present invention
MEMS structure, in addition to guard block 160, guard block 160 are connected with interconnecting member 150,
And it is separated by a distance between vibrating diaphragm layer 120, when the motional amplitude of vibrating diaphragm layer 120 is predetermined more than this
Apart from when protective effect can be provided.In the present embodiment, the Part II extension of interconnecting member 150
To the lower section of vibrating diaphragm layer 120, guard block 160 is damping block, itself and interconnecting member 150 second
Partial lower end connection, and it is separated by a distance between vibrating diaphragm layer 120.
In the above-described embodiment, guard block 160 is located at the lower section of vibrating diaphragm layer 120.Substituting
Embodiment in, opening, guard block 160 and interconnecting member 150 are set on back pole plate 140
During connection, it is located at the top of vibrating diaphragm layer 120, and the opening on back pole plate 140 is used for convenient protect
The formation of part 160.
In the above-described embodiment, voice signal reaches the second surface of vibrating diaphragm layer 120 from the operatic tunes.
In alternate embodiments, back pole plate 140 is provided with multiple holes, and voice signal can also be from described
Multiple holes reach the first surface of vibrating diaphragm layer 120.
The vertical view of MEMS structure according to a second embodiment of the present invention is shown respectively in Fig. 3 a, 3b and 3c
Figure, bottom view and sectional view, the line AA in wherein Fig. 3 a show the interception position of sectional view.Should
MEMS structure is, for example, silicon capacitor microphone, including substrate 110, substrate include the operatic tunes 111,
Vibrating diaphragm layer 120 on substrate 110, the upper back pole plate 140 positioned at vibrating diaphragm layer 120, it is located at
Supporting layer 130 and interconnecting member 150 between back pole plate 140 and substrate 110, the vibrating diaphragm layer
120 be included in the hanging Part I 121 in the top of the operatic tunes 111 and inside supporting layer 130 the
Two parts 122, the interconnecting member 150 include with the Part I of 140 identical aspect of back pole plate and
The Part II for extending downwardly from the Part I and being connected with vibrating diaphragm layer 120, so by mutual
Even part 150 realizes mechanical connection and the electrical connection of vibrating diaphragm layer 120, makes vibrating diaphragm layer Part I 121
It is able to hanging, the sensitivity of raising vibrating diaphragm layer 120.
The difference of second embodiment and first embodiment explained below, to the two it is identical it
Place is no longer described in detail.
In the present embodiment, guard block 160 is in the hanging Part I 121 of vibrating diaphragm layer 120
Lower section, it is and separated by a distance between vibrating diaphragm layer 120, when the motional amplitude of vibrating diaphragm layer 120 is big
Protective effect can be provided when the preset distance.In the present embodiment, the cross sectional shape of substrate 110,
The cross sectional shape of the operatic tunes 111 is circle, and guard block 160 raises up for the periphery of the operatic tunes 111
Part, it is generally shaped like cylinder.Guard block 160 can use and the identical material of substrate 110.
Fig. 4 a to 4d be shown respectively MEMS structure according to a third embodiment of the present invention exploded view,
Line AA in top view, bottom view and sectional view, wherein Fig. 4 b shows the interception position of sectional view.
The MEMS structure is, for example, silicon capacitor microphone, including substrate 110, shaking on substrate 110
Between film layer 120, the back pole plate 140 in vibrating diaphragm layer 120, back pole plate 140 and substrate 110
Supporting layer 130 and interconnecting member 150.Wherein, interconnecting member 150 includes and back pole plate 140
The Part I of identical aspect and extend downwardly from the Part I and be connected with vibrating diaphragm layer 120
Part II.
The difference of 3rd embodiment and first embodiment explained below, to the two it is identical it
Place is no longer described in detail.
In the present embodiment, supporting layer 130 is that upper surface contacts lower surface and lining with back pole plate 140
The square ring supporting layer that bottom 110 contacts.Vibrating diaphragm layer 120 and back pole plate 140 are square.Mutually
Even the Part I of part 150 is tabular, and Part II extends to including a pair from Part I to shake
The symmetrical diagonally disposed plate of film layer 120.The periphery of back pole plate 140 has and interconnecting member 150
Corresponding opening.Thus, in the diverse location of circular periphery, interconnecting member 150 and back pole plate
140 contact the same surface of supporting layer 130 respectively, and wherein interconnecting member 150 is located at back pole plate 140
Opening in.Vibrating diaphragm layer 120 is able to integrated hanging by the fixation of interconnecting member 150.
If Fig. 4 c are according to the bottom view of the present embodiment, substrate 110 is included from the edge of the operatic tunes 111 to sound
The lateral extension portions 112 of the center of chamber 111 extension, guard block 160 are located in lateral extensions
Divide 112, it is below vibrating diaphragm layer 120 and reserves certain distance, when the motional amplitude of vibrating diaphragm layer 120
Protective effect can be provided during more than the preset distance.In the present embodiment, the cross sectional shape of substrate 110
It is general square shape with the cross sectional shape of the operatic tunes 111, substrate 110 includes the lateral extension portions to center
112 be square column, and guard block 160 is also square column.
In the above-described embodiments, to the shape of each part more using circular or square, it is possible to understand that
It is that the shape of part is not limited to circular or square, other such as shapes of polygon or ellipse
It shall fall within protection scope of the present invention.
It should be noted that herein, such as first and second or the like relational terms are only
For an entity or operation are made a distinction with another entity or operation, and not necessarily require
Either imply between these entities or operation any this actual relation or order be present.Moreover,
Term " comprising ", "comprising" or any other variant thereof is intended to cover non-exclusive inclusion,
So that process, method, article or equipment including a series of elements not only will including those
Element, but also the other element including being not expressly set out, or also include for this process,
Method, article or the intrinsic key element of equipment.In the absence of more restrictions, by sentence
"including a ..." limit key element, it is not excluded that the process including the key element, method,
Other identical element in article or equipment also be present.
According to embodiments of the invention as described above, these embodiments do not have detailed descriptionthe and owned
Details, it is only described specific embodiment also not limit the invention.Obviously, as described above,
It can make many modifications and variations.This specification is chosen and specifically describes these embodiments, be in order to
The principle and practical application of the present invention is preferably explained, so that skilled artisan's energy
The modification using the present invention and on the basis of the present invention uses well.The present invention only will by right
Ask the limitation of book and its four corner and equivalent.
Claims (10)
- A kind of 1. MEMS structure, it is characterised in that including：Substrate；Movable member, the movable member are located on the substrate；Fixed component, the fixed component are located on the movable member, and with the movable part Part is relative to each other, to form capacitor plate；AndInterconnecting member, including the Part I of aspect identical with the fixed component and from described first The Part II that part extends downwardly and is connected with movable member.
- 2. MEMS structure according to claim 1, it is characterised in that also include：Guard block, the guard block and the movable member are spaced a predetermined distance from, so as to described Movable member motional amplitude provides protection when being more than the preset distance.
- 3. MEMS structure according to claim 2, it is characterised in that the MEMS structure For MEMS microphone, the movable member and fixed component are respectively shaking for the MEMS microphone Film layer and back pole plate,Wherein, the substrate includes the operatic tunes, the vibrating diaphragm layer by the operatic tunes and ft connection with Receive voice signal.
- 4. MEMS structure according to claim 3, it is characterised in that the vibrating diaphragm layer exists It is all or part of hanging above the operatic tunes.
- 5. MEMS structure according to claim 3, it is characterised in that the guard block It is connected with the interconnecting member.
- 6. MEMS structure according to claim 5, it is characterised in that the interconnecting member The lower section of the vibrating diaphragm layer is extended to, the guard block is to be fixed on the interconnecting member second Divide the damping block of lower end.
- 7. MEMS structure according to claim 3, it is characterised in that the guard block It is located at the part that the periphery of the operatic tunes raises up for the substrate.
- 8. MEMS structure according to claim 3, it is characterised in that the substrate includes The lateral extension portions extended from operatic tunes edge to operatic tunes center, the guard block are located at the horizontal stroke To extension.
- 9. the MEMS structure according to claim 7 or 8, it is characterised in that the protection Part is generally a cylindrical or square column.
- 10. MEMS structure according to claim 1, it is characterised in that also include：Supporting layer between the substrate and the fixed component,Wherein, the Part I of the interconnecting member laterally prolongs on the supporting layer at least in part Stretch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610331737.0A CN107404698B (en) | 2016-05-18 | 2016-05-18 | MEMS structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610331737.0A CN107404698B (en) | 2016-05-18 | 2016-05-18 | MEMS structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107404698A true CN107404698A (en) | 2017-11-28 |
| CN107404698B CN107404698B (en) | 2024-07-12 |
Family
ID=60394367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610331737.0A Active CN107404698B (en) | 2016-05-18 | 2016-05-18 | MEMS structure |
Country Status (1)
| Country | Link |
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| CN (1) | CN107404698B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020228543A1 (en) * | 2019-05-13 | 2020-11-19 | 无锡华润上华科技有限公司 | Micro-electro-mechanical system device |
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| CN201750548U (en) * | 2010-04-09 | 2011-02-16 | 无锡芯感智半导体有限公司 | Capacitive tiny microphone |
| US20140291786A1 (en) * | 2011-07-21 | 2014-10-02 | Jochen Zoellin | component having a micromechanical microphone structure |
| CN104113812A (en) * | 2014-08-11 | 2014-10-22 | 苏州敏芯微电子技术有限公司 | Capacitive micro-silicon microphone and production method thereof |
| CN104541521A (en) * | 2013-08-06 | 2015-04-22 | 歌尔声学股份有限公司 | Shock-resistant silicon-based MEMS microphones, systems and packages incorporating same |
| CN205051874U (en) * | 2015-11-03 | 2016-02-24 | 北京卓锐微技术有限公司 | MEMS (Micro -electromechanical system) microphone |
-
2016
- 2016-05-18 CN CN201610331737.0A patent/CN107404698B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201750548U (en) * | 2010-04-09 | 2011-02-16 | 无锡芯感智半导体有限公司 | Capacitive tiny microphone |
| US20140291786A1 (en) * | 2011-07-21 | 2014-10-02 | Jochen Zoellin | component having a micromechanical microphone structure |
| CN104541521A (en) * | 2013-08-06 | 2015-04-22 | 歌尔声学股份有限公司 | Shock-resistant silicon-based MEMS microphones, systems and packages incorporating same |
| CN104113812A (en) * | 2014-08-11 | 2014-10-22 | 苏州敏芯微电子技术有限公司 | Capacitive micro-silicon microphone and production method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020228543A1 (en) * | 2019-05-13 | 2020-11-19 | 无锡华润上华科技有限公司 | Micro-electro-mechanical system device |
| US11671765B2 (en) | 2019-05-13 | 2023-06-06 | Csmc Technologies Fab2 Co., Ltd. | Micro-Electro-Mechanical System device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107404698B (en) | 2024-07-12 |
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