CN107369699A - Flexible display apparatus and its manufacture method and compliant conductive pattern - Google Patents

Abstract

Provided are a flexible display device, a manufacturing method thereof, and a flexible conductive pattern. A flexible display device includes a flexible substrate and a conductive pattern. The flexible base includes bends. The conductive pattern includes a first conductive pattern layer and a second conductive pattern layer disposed on the first conductive pattern layer, and at least a portion of the conductive pattern may be disposed on the bent portion. The first conductive pattern layer has a first thickness and includes a first material, and the second conductive pattern layer has a second thickness smaller than the first thickness and includes a second material different from the first material.

Description

Flexible display device, manufacturing method thereof, and flexible conductive pattern

This application claims priority and benefit from Korean Patent Application No. 10-2016-0059110 filed on May 13, 2016, which is hereby incorporated by reference for all purposes as if fully set forth herein explained the same.

technical field

Exemplary embodiments relate to a flexible display device and a method of manufacturing the same. More particularly, exemplary embodiments relate to a flexible display device capable of preventing cracks due to bending and a method of manufacturing the same.

Background technique

The display device displays various images to provide information to a user. In recent years, bendable display devices have been developed. Unlike flat panel display devices, flexible display devices are folded, curled, or bent like a sheet of paper. Flexible display devices having various shapes are easy to carry and improve user's convenience.

The above information disclosed in this Background section is only for enhancement of understanding of the background of the inventive concept and therefore it may contain information that does not form the prior art that is already known in this country to a person of ordinary skill in the art.

Contents of the invention

Exemplary embodiments provide a flexible display device capable of preventing cracks from occurring due to bending deformation.

Exemplary embodiments provide a method of manufacturing a flexible display device that prevents cracks from occurring due to bending deformation.

Additional aspects will be set forth in the detailed description which follows, and, in part, will be obvious from the disclosure, or may be learned by practice of the inventive concept.

Exemplary embodiments disclose a flexible display device including a flexible substrate and a conductive pattern. The flexible base includes bends. The conductive pattern includes a first conductive pattern layer and a second conductive pattern layer disposed on the first conductive pattern layer, and at least a portion of the conductive pattern may be disposed on the bent portion. The first conductive pattern layer has a first thickness and includes a first material, and the second conductive pattern layer has a second thickness smaller than the first thickness and includes a second material different from the first material.

The exemplary embodiment also discloses a flexible display device, which includes: a flexible display panel including a flexible substrate, an organic light-emitting element disposed on the flexible substrate, and a sealing layer disposed on the organic light-emitting element; and a touch panel. The sensing unit includes a touch bending part and is arranged on the sealing layer. The touch sensing unit includes a conductive pattern including a first conductive pattern layer and a second conductive pattern layer disposed on the first conductive pattern layer and included in the touch bending portion, the first conductive pattern layer having a first thickness and includes a first material, the second conductive pattern layer has a second thickness smaller than the first thickness and includes a second material different from the first material.

Exemplary embodiments also disclose a method of manufacturing a flexible display device, the method including preparing a flexible substrate and disposing a conductive pattern on the flexible substrate. The setting of the conductive pattern includes: supplying a first gas to form a first conductive pattern layer having a first thickness on the flexible substrate; and supplying a second gas different from the first gas to form a second conductive pattern layer on the first conductive pattern layer. The conductive pattern layer, the second conductive pattern layer has a second thickness smaller than the first thickness.

Exemplary embodiments also disclose a flexible conductive pattern. The flexible conductive pattern includes a first conductive pattern layer disposed on the flexible substrate and including a first material with a first thickness. The second conductive pattern layer is disposed on the first conductive pattern layer and includes a second material different from the first material, and the second material has a second thickness smaller than the first thickness.

According to exemplary embodiments of the flexible display device, cracks caused by bending may be reduced.

According to an exemplary embodiment of a method of manufacturing a flexible display device, a flexible display device that can reduce cracks caused by bending can be manufactured.

Both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the claimed subject matter.

Description of drawings

The accompanying drawings illustrate exemplary embodiments of the inventive concept and together with the description serve to explain the principle of the inventive concept, are included to provide a further understanding of the inventive concept and are incorporated in and incorporated in this specification and form part of this manual.

1A , 1B and 1C are perspective views illustrating a flexible display device according to an exemplary embodiment of the present disclosure.

2A, 2B and 2C are cross-sectional views taken along line II' of FIG. 1B.

FIG. 3A is a perspective view illustrating a flexible display device according to an exemplary embodiment of the present disclosure.

3B and 3C are cross-sectional views illustrating wiring included in a flexible display device according to an exemplary embodiment of the present disclosure.

3D and 3E are cross-sectional views illustrating electrodes included in a flexible display device according to an exemplary embodiment of the present disclosure.

FIG. 4A is a perspective view illustrating a flexible display device according to an exemplary embodiment of the present disclosure.

FIG. 4B is a cross-sectional view taken along line II-II' of FIG. 4A.

4C and 4D are cross-sectional views of first wiring included in a flexible display device according to an exemplary embodiment of the present disclosure.

4E and 4F are cross-sectional views of second wiring included in a flexible display device according to an exemplary embodiment of the present disclosure.

5A, 5B and 5C are perspective views illustrating a flexible display device according to an exemplary embodiment of the present disclosure.

FIG. 6A is a circuit diagram illustrating one pixel among pixels included in a flexible display device according to an exemplary embodiment of the present disclosure.

6B is a plan view illustrating one pixel among pixels included in a flexible display device according to an exemplary embodiment of the present disclosure.

FIG. 6C is a cross-sectional view taken along line III-III' of FIG. 6B.

FIG. 7A is a cross-sectional view illustrating a flexible display device according to an exemplary embodiment of the present disclosure.

7B is a plan view illustrating a touch sensing unit included in a flexible display device according to an exemplary embodiment of the present disclosure.

FIG. 8A is a cross-sectional view illustrating a flexible display device according to an exemplary embodiment of the present disclosure.

8B is a plan view illustrating a touch sensing unit included in a flexible display device according to an exemplary embodiment of the present disclosure.

9A and 9B are cross-sectional views illustrating sensing electrodes included in a touch sensing unit according to an exemplary embodiment of the present disclosure.

9C and 9D are cross-sectional views illustrating wires included in a touch sensing unit according to an exemplary embodiment of the present disclosure.

10A , 10B, 10C, 10D, 10E and 10F are perspective views illustrating various devices to which a flexible display device is applied according to an exemplary embodiment of the present disclosure.

FIG. 11 is a flowchart illustrating a method of manufacturing a flexible display device according to an exemplary embodiment of the present disclosure.

FIG. 12A is a SEM image of the first exemplary embodiment, the first comparative example, and the third comparative example.

FIG. 12B is a SEM image of the first exemplary embodiment, the second exemplary embodiment, the first comparative example, and the second comparative example.

Fig. 13 is a cross-sectional photograph of the first exemplary embodiment, the second exemplary embodiment, the first comparative example, and the second comparative example.

FIG. 14 is a photograph showing wire disconnection caused by inner bending or outer bending in the first comparative example and the third comparative example.

detailed description

In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of various exemplary embodiments. It is apparent, however, that the various exemplary embodiments may be practiced without these specific details, or with one or more equivalent arrangements. In other instances, well-known structures and devices are shown in block diagram form in order to avoid unnecessarily obscuring the various exemplary embodiments.

In the drawings, the size and relative sizes of layers, films, panels, regions, etc., may be exaggerated for clarity and descriptive purposes. In addition, the same reference numerals denote the same elements.

When an element or layer is referred to as being "on," "connected to," or "coupled to" another element or layer, the element or layer can be directly on the other element or layer. , directly connected to or directly bonded to said other element or layer, or intervening elements or layers may be present. However, when an element or layer is referred to as being "directly on," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers present. For the purposes of this disclosure, "at least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" may be interpreted as Only X, only Y, only Z, or any combination of two or more of X, Y and Z, such as XYZ, XYY, YZ and ZZ for example. The same reference numerals denote the same elements throughout. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

Although the terms first, second, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are used to distinguish one element, component, region, layer and/or section from another element, component, region, layer and/or section. Thus, a first element, component, region, layer and/or section discussed below could be termed a second element, component, region, layer and/or section without departing from the teachings of the present disclosure.

For descriptive purposes, spatially relative terms such as "under", "beneath", "beneath", "above", "above", etc. may be used herein to describe The relationship of one element or feature to another element or feature is shown in the figure. Spatially relative terms are intended to encompass different orientations of the device in use, operation and/or manufacture in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "below" can encompass both an orientation of above and below. In addition, the device may be otherwise oriented (eg, rotated 90 degrees or at other orientations), and thus the spatially relative descriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments and is not intended to be limiting. As used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly dictates otherwise. In addition, when the terms "comprising" and/or "comprising" are used in this specification, it indicates that there are stated features, wholes, steps, operations, elements, components and/or groups thereof, but does not exclude the existence or addition of one or Many other features, integers, steps, operations, elements, components and/or groups thereof.

Various exemplary embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized exemplary embodiments and/or intermediate structures. As such, variations from the shapes illustrated are to be expected, for example, as a result of manufacturing techniques and/or tolerances. Thus, exemplary embodiments disclosed herein should not be construed as limited to the shapes of regions particularly illustrated but are to include deviations in shapes that result, for example, from manufacturing. For example, an implanted region illustrated as a rectangle will, typically, have rounded or curved features and/or a gradient of implant concentration at its edges rather than a binary change from implanted to non-implanted region. Likewise, a buried region formed by implantation will result in some implantation in the region between the buried region and the surface through which the implantation takes place. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to be limiting.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art of which this disclosure is a part. Unless expressly so defined herein, terms (such as those defined in commonly used dictionaries) should be construed to have a meaning consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formalized sense to explain.

1A, 1B and 1C are perspective views illustrating a flexible display device 10 according to an exemplary embodiment of the present disclosure.

Referring to FIGS. 1A , 1B and 1C, the flexible display device 10 may include a flexible substrate FB and a conductive pattern CP. The conductive pattern CP may be disposed on the flexible substrate FB in the first direction DR1. As used herein, the term "flexible" means that the substrate can be designed to be bendable, and thus, the flexible substrate FB can be completely folded or partially bent. The flexible substrate FB may include, but is not limited to, plastic materials or organic polymers, such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide, polyethersulfone, and the like. The material for the flexible substrate FB may be selected in consideration of mechanical strength, thermal stability, transparency, surface flatness, ease of handling, water resistance, and the like. The flexible base FB may be transparent. As used herein, the term "conductive pattern" may include patterns formed of conductive materials, and may optionally include patterns formed of semiconductor materials.

The flexible display device 10 may operate in the first mode or the second mode. The flexible base FB may include a bent portion BF and a non-bent portion NBF. The bent portion BF can be bent in the first mode with respect to the bending axis BX extending in the second direction DR2, and stretched in the second mode. The bent portion BF may be connected to the non-bent portion NBF. In the first mode and the second mode, the non-bent portion NBF may not be bent. At least a portion of the conductive pattern CP may be disposed on the bent portion BF. As used herein, the term "curved" means that the flexible substrate FB can be bent in a certain shape due to external force. For example, the bend BF may be rigid or flexible. The curved portion may be a concept including all of curved, foldable, stretchable, rollable, and flexible portions.

Referring to FIGS. 1A and 1C , at least a portion of the flexible substrate FB and the conductive pattern CP may be bent in the first mode. Referring to FIG. 1B , the bend BF may be stretched in the second mode.

The first mode may include a first bending mode and a second bending mode. Referring to FIG. 1A , in the first bending mode, the flexible display device 10 may be bent in one direction with respect to a bending axis BX. That is, in the first bending mode, the flexible display device 10 may be bent inward. Hereinafter, when the flexible display device 10 can be bent with respect to the bending axis BX, the following state can be referred to as inward bending: the distance between the portions of the conductive pattern CP that face each other after the conductive pattern CP can be bent can be shorter than The distance between portions of the flexible base FB that face each other after the flexible base FB can be bent. In the inwardly bent state, the surface of the bent portion BF has a first curvature radius R1. The first radius of curvature R1 may be within a range of equal to or greater than approximately 1 mm and equal to or less than approximately 10 mm.

Referring to FIG. 1C , in the second bending mode, the flexible display device 10 may be bent in a direction opposite to the one direction in FIG. 1A with respect to the bending axis BX. That is, in the second bending mode, the flexible display device 10 may be bent outward. Hereinafter, when the flexible display device 10 can be bent with respect to the bending axis BX, the following state can be called outward bending: the distance between the portions of the flexible substrate FB that face each other after the flexible substrate FB can be bent can be shorter than The distance between portions of the conductive pattern CP facing each other after the conductive pattern CP may be bent. In the outwardly curved state, the surface of the bent portion BF may have a second curvature radius R2. The second radius of curvature R2 may be the same as or different from the first radius of curvature R1. The second radius of curvature R2 may be within a range of equal to or greater than approximately 1 mm and equal to or less than approximately 10 mm.

In FIGS. 1A and 1C , when the flexible display device 10 can be bent with respect to the bending axis BX, the distance between the portions of the flexible substrate FB facing each other can be constant, but it should not be limited or limited by this . That is, the distance between portions of the flexible substrate FB facing each other may not be constant. In addition, in FIG. 1A and FIG. 1C, when the flexible display device 10 can be bent relative to the bending axis BX, the area of one of the parts of the curved flexible substrate FB can be equal to the other part of the part of the curved flexible substrate FB. but it shall not be limited or limited thereby. That is, the area of one of the portions of the curved flexible substrate FB may be different from the area of the other portion of the portions of the curved flexible substrate FB.

2A , 2B, and 2C are cross-sectional views illustrating a line II' of FIG. 1B .

Referring to FIGS. 1A , 1B, 1C, and 2A, at least a portion of the conductive pattern CP may be disposed on the bent portion BF. The conductive pattern CP may include a plurality of conductive pattern layers. The conductive pattern CP may include two, three, four, five or six conductive pattern layers, but it should not be limited thereto or by this. That is, the conductive pattern CP may include seven or more conductive pattern layers. Each conductive pattern layer may include a plurality of crystal grains. The crystal grains are crystal grains obtained by regularly arranging constituent atoms.

Referring to FIGS. 1A , 1B, 1C, and 2A, the conductive pattern CP may include a first conductive pattern layer CPL1 and a second conductive pattern layer CPL2 . The first conductive pattern layer CPL1 may have a first thickness t1 equal to or greater than about 100 angstroms and equal to or less than about 1500 angstroms. When the first thickness t1 of the first conductive pattern layer CPL1 is less than about 100 angstroms, even without changing the thickness of the conductive pattern CP, the number of interfaces between the conductive pattern layers increases, and thus, the resistance of the conductive pattern layer increases. Therefore, power consumption for driving the flexible display device 10 increases. In addition, the reliability of the process of manufacturing and disposing the first conductive pattern layer CPL1 may be degraded. When the first thickness t1 of the first conductive pattern layer CPL1 exceeds about 1500 angstroms, it may be difficult to ensure the flexibility of the first conductive pattern layer CPL1, and therefore, cracks or disconnections may occur in the first conductive pattern layer CPL1, thereby making the reliability reliable. sexual deterioration.

The first conductive pattern layer CPL1 may include first grains GR1 each having a first grain size. Hereinafter, the grain size may mean the average value of grain diameters or the largest grain diameter. The first grains GR1 of the first conductive pattern layer CPL1 may have a first grain size equal to or greater than about 100 angstroms and equal to or less than about 1000 angstroms. In more detail, the first grain size of each of the first grains GR1 may be equal to or greater than about 100 angstroms and equal to or less than about 1000 angstroms, and the average value of the first grain sizes of the first grains GR1 may be equal to Or greater than about 100 angstroms and equal to or less than about 1000 angstroms, representative values of the first grain size may be equal to or greater than about 100 angstroms and equal to or less than about 1000 angstroms.

When the first grain size of the first grain GR1 of the first conductive pattern layer CPL1 is less than about 100 angstroms, the resistance of the first conductive pattern layer CPL1 increases, and thus, the power consumption required to drive the flexible display device 10 increases. . When the first grain size of the first grains GR1 of the first conductive pattern layer CPL1 exceeds about 1000 angstroms, it may be difficult to secure bending flexibility of the first conductive pattern layer CPL1 because the first grain size may be too large. Therefore, cracks or disconnections occur in the first conductive pattern layer CPL1 and may degrade the reliability of the flexible display device 10 .

The first conductive pattern layer CPL1 may include a first material. The first material may include at least one of metal, metal alloy, metal oxide, and transparent conductive oxide, but it should not be limited or limited thereto. The first material may also include a semiconductor material such as Si.

The metal may include, but is not limited to, at least one of Al, Cu, Ti, Mo, Ag, Mg, Pt, Pd, Au, Ni, Nd, Ir, and Cr.

The transparent conductive oxide may include but not limited to at least one of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO).

In the first conductive pattern layer CPL1, about 200 crystal grains to about 1200 crystal grains are arranged within a unit area of about 1.0 square micrometers (μm ² ). The term "within a unit area of about 1.0 square micrometer (μm ² )" means that the unit area may be defined in any region on the plane of the first conductive pattern layer CPL1. When the number of first grains GR1 in a unit area of about 1.0 square micrometers (μm ² ) is less than about 200, it may be difficult to secure bending flexibility. Therefore, cracks or disconnections of the first conductive pattern layer CPL1 occur, and the reliability of the flexible display device 10 may be degraded. In addition, when the number of the first grains GR1 in a unit area of about 1.0 square micrometers (μm ² ) exceeds about 1200, the resistance of the first conductive pattern layer CPL1 increases, and thus, the work required to drive the flexible display device 10 Consumption increases.

The second conductive pattern layer CPL2 may be disposed on the first conductive pattern layer CPL1. The second conductive pattern layer CPL2 may have a second thickness t2 equal to or greater than about 10 angstroms and equal to or less than about 100 angstroms. The second thickness t2 may be thinner than the first thickness t1. When the second thickness t2 of the second conductive pattern layer CPL2 is less than about 10 angstroms, it may be difficult to prevent excessive expansion of the first grain size of the first conductive pattern layer CPL1. In addition, the reliability of the process of manufacturing and disposing the second conductive pattern layer CPL2 may be degraded. When the second thickness t2 of the second conductive pattern layer CPL2 exceeds about 100 angstroms, it may be difficult to ensure the flexibility of the second conductive pattern layer CPL2, and therefore, cracks or disconnections occur in the second conductive pattern layer CPL2, thereby deteriorating reliability. deteriorating.

The second conductive pattern layer CPL2 prevents the first grains GR1 of the first conductive pattern layer CPL1 from being connected to the second grains GR2 of the second conductive pattern layer CPL2. The second conductive pattern layer CPL2 may control the first grain size of the first conductive pattern layer CPL1. For example, the second conductive pattern layer CPL2 may prevent the first grain size of the first conductive pattern layer CPL1 from being excessively increased.

The second conductive pattern layer CPL2 may include second grains GR2 each having a second grain size. The second grains GR2 of the second conductive pattern layer CPL2 have a second grain size equal to or greater than about 100 angstroms and equal to or less than about 1000 angstroms. In more detail, the average value of the second grain size of the second grains GR2 of the second conductive pattern layer CPL2 may be smaller than the average value of the first grain size of the first grains GR1 of the first conductive pattern layer CPL1. The second conductive pattern layer CPL2 may include a second material. The second material may be different from the first material. The second material may include at least one of metal, metal alloy, metal oxide, and transparent conductive oxide, but it should not be limited or limited thereto. The second material may also include a semiconductor material such as Si.

The metal may include, but is not limited to, at least one of Al, Cu, Ti, Mo, Ag, Mg, Pt, Pd, Au, Ni, Nd, Ir, and Cr.

The transparent conductive oxide may include but not limited to at least one of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO).

Referring to FIGS. 1A , 1B, 1C, and 2B, the conductive pattern CP may include a first conductive pattern layer CPL1 , a second conductive pattern layer CPL2 , and a third conductive pattern layer CPL3 . The second conductive pattern layer CPL2 may be disposed on the first conductive pattern layer CPL1. The third conductive pattern layer CPL3 may be disposed on the second conductive pattern layer CPL2.

The conductive pattern CP may include, for example, a first conductive pattern layer CPL1 including aluminum, a second conductive pattern layer CPL2 disposed on the first conductive pattern layer CPL1 and including titanium, and a second conductive pattern layer CPL2 disposed on the second conductive pattern layer CPL2 and including aluminum. Three conductive pattern layers CPL3. In this case, the first conductive pattern layer CPL1, the second conductive pattern layer CPL2, and the third conductive pattern layer CPL3 may have thicknesses of about 1500 angstroms, about 50 angstroms, and about 1500 angstroms, respectively.

The conductive pattern CP may include, for example, a first conductive pattern layer CPL1 including aluminum, a second conductive pattern layer CPL2 disposed on the first conductive pattern layer CPL1 and including aluminum oxide, and a conductive pattern layer CPL2 disposed on the second conductive pattern layer CPL2 and including aluminum. The third conductive pattern layer CPL3.

The third conductive pattern layer CPL3 may have a third thickness t3 equal to or greater than about 100 angstroms and equal to or less than about 1500 angstroms. The third thickness t3 may be thicker than the second thickness t2. The third thickness t3 may be the same as or different from the first thickness t1. When the third thickness t3 of the third conductive pattern layer CPL3 is less than about 100 angstroms, even without changing the thickness of the conductive pattern CP, the number of interfaces between the conductive pattern layers increases, and thus, the resistance of the conductive pattern layer increases. Therefore, the power consumed to drive the flexible display device 10 increases. In addition, the reliability of the process of manufacturing and disposing the third conductive pattern layer CPL3 may be degraded. When the third thickness t3 of the third conductive pattern layer CPL3 exceeds about 1500 angstroms, it may be difficult to ensure the flexibility of the third conductive pattern layer CPL3, and therefore, cracks or disconnections occur in the third conductive pattern layer CPL3, thereby deteriorating reliability. deteriorating.

The third conductive pattern layer CPL3 may include third grains GR3 each having a third grain size. The third grains GR3 of the third conductive pattern layer CPL3 have a third grain size equal to or greater than about 100 angstroms and equal to or less than about 1000 angstroms. In more detail, the third grain size of each of the third grains GR3 may be equal to or greater than about 100 angstroms and equal to or less than about 1000 angstroms, and the average value of the third grain sizes of the third grains GR3 may be equal to or greater than about 100 angstroms and equal to or less than about 1000 angstroms, a representative value of the third grain size may be equal to or greater than about 100 angstroms and equal to or less than about 1000 angstroms. The average value of the third grain size of the third grains GR3 of the third conductive pattern layer CPL3 may be greater than the average value of the second grain size of the second grains GR2 of the second conductive pattern layer CPL2.

When the third grain size of the third conductive pattern layer CPL3 is less than about 100 angstroms, the resistance of the third conductive pattern layer CPL3 increases, and thus, the power consumption required to drive the flexible display device 10 increases. When the third grain size of the third conductive pattern layer CPL3 exceeds about 1000 angstroms, it may be difficult to ensure the bending flexibility of the third conductive pattern layer CPL3 because the third grain size may be too large. Therefore, cracks or disconnections occur in the third conductive pattern layer CPL3, and the reliability of the flexible display device 10 may be degraded.

The third conductive pattern layer CPL3 may include a third material. The third material may be different from the second material. The third material may be the same as or different from the first material. The third material may include at least one of metal, metal alloy, metal oxide, and transparent conductive oxide, but it should not be limited or limited thereto. The third material may also include a semiconductor material such as Si.

The metal may include, but is not limited to, at least one of Al, Cu, Ti, Mo, Ag, Mg, Pt, Pd, Au, Ni, Nd, Ir, and Cr.

The transparent conductive oxide may include but not limited to at least one of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO).

In the third conductive pattern layer CPL3, about 200 crystal grains to about 1200 crystal grains are arranged within a unit area of about 1.0 square micrometer (μm ² ). The term "within a unit area of about 1.0 square micrometer (μm ² )" means that the unit area may be defined in any area on the plane of the third conductive pattern layer CPL3. When the number of third grains GR3 in a unit area of about 1.0 square micrometers (μm ² ) is less than about 200, it may be difficult to secure bendable flexibility. Therefore, cracks or disconnections of the third conductive pattern layer CPL3 may occur, and the reliability of the flexible display device 10 may be degraded. In addition, when the number of the third grains GR3 in a unit area of about 1.0 square micrometers (μm ² ) exceeds about 1200, the resistance of the third conductive pattern layer CPL3 increases, and therefore, the driving of the flexible display device 10 requires Power consumption will increase.

Referring to FIG. 2C, the conductive pattern CP may include five stacked patterns, each of which may include a first conductive pattern layer CPL1, a second conductive pattern layer CPL2 disposed on the first conductive pattern layer CPL1, and a second conductive pattern layer CPL2 disposed on the second conductive pattern layer. The third conductive pattern layer CPL3 on the conductive pattern layer CPL2. For example, the conductive pattern CP may include a first conductive pattern layer CPL1 including aluminum, a second conductive pattern layer CPL2 disposed on the first conductive pattern layer CPL1 and including titanium, and a conductive pattern layer CPL2 disposed on the second conductive pattern layer CPL2 and including aluminum. The third conductive pattern layer CPL3.

In general, when the grain size of the conductive pattern CP decreases, the resistance of the conductive pattern CP increases. Accordingly, power consumption for driving the flexible display device 10 may increase, however, the flexibility of the conductive pattern CP may be secured, and the flexible display device 10 may have improved flexibility. On the contrary, when the grain size of the conductive pattern CP increases, the resistance of the conductive pattern CP decreases. However, it may be difficult to secure the bending flexibility of the flexible display device 10, and thus, cracks or disconnections occur.

The conductive pattern CP of the flexible display device 10 according to the present exemplary embodiment may include a first conductive pattern layer CPL1 having a first thickness t1 and including a first material, and having a second thickness t2 smaller than the first thickness t1 and including A second conductive pattern layer CPL2 of a second material different from the first material. The second conductive pattern layer CPL2 may prevent the first grain size of the first conductive pattern layer CPL1 from being excessively increased. Therefore, the conductive pattern CP included in the flexible display device 10 according to the present exemplary embodiment may have resistance sufficient to ensure appropriate driving characteristics and improved flexibility when compared with a structure in which the conductive pattern is configured to include only one layer. .

FIG. 3A is a perspective view illustrating a flexible display device 10 according to an exemplary embodiment of the present disclosure. 3B and 3C are cross-sectional views illustrating wiring included in a flexible display device according to an exemplary embodiment of the present disclosure. 3D and 3E are cross-sectional views illustrating electrodes included in a flexible display device according to an exemplary embodiment of the present disclosure.

1A, 1B, 1C, 3A, 3B, 3C, 3D and 3E, the flexible display device 10 may include a flexible substrate FB, wiring WI and electrodes EL. At least one of the wiring WI and the electrode EL may be a conductive pattern CP. The wiring WI and the electrode EL may be included in the touch sensing unit TSU (see FIG. 5A ) and the flexible display panel DP (see FIG. 5A ).

The wiring WI may be provided on the flexible substrate FB. At least a part of the wiring WI may be provided on the bent portion BF. For example, the wiring WI may be provided on the bent portion BF, but not on the non-bent portion NBF, but it should not be limited or restricted thereto. That is, the wiring WI may be provided on the bent portion BF and the non-bent portion NBF.

Referring to FIGS. 1A , 1B, 1C, 3A, 3B, and 3C, the wiring WI may include a plurality of wiring layers. The wiring WI may include two, three, four, five or six wiring layers, but it should not be limited or limited thereto. That is, the wiring WI may include seven or more wiring layers. The wiring WI may include a first wiring layer WIL1 and a second wiring layer WIL2. The first wiring layer WIL1 may include first grains each having a first grain size. The first wiring layer WIL1 may include a first material. The second wiring layer WIL2 may be disposed on the first wiring layer WIL1. The second wiring layer WIL2 may include second grains each having a second grain size. The second wiring layer WIL2 may include a second material. The second material may be different from the first material. The second wiring layer WIL2 may have a thickness smaller than that of the first wiring layer WIL1.

The wiring WI may further include a third wiring layer WIL3. The third wiring layer WIL3 may include third grains each having a third grain size. The third wiring layer WIL3 may include a third material. The third material may be different from the second material. The third material may be the same as or different from the first material. The third wiring layer WIL3 may have a thickness greater than that of the second wiring layer WIL2.

Referring to FIGS. 1A , 1B, 1C, 3A, 3D, and 3E, the electrodes EL may be disposed on the flexible substrate FB. At least a part of the electrode EL may be disposed on the bend BF. For example, the electrode EL may be provided on the bent portion BF, but not on the non-bent portion NBF, but it should not be limited or limited thereto. That is, the electrode EL may be provided on the bent portion BF and the non-bent portion NBF.

The electrodes EL may be electrically connected to the wiring WI. The electrode EL may be separated from the wiring WI, but it should not be limited to or by this. For example, the electrode EL may be integrally connected to the wiring WI.

The electrodes EL and the wiring WI may be provided on the same layer, but it should not be limited to or by this. The electrodes EL and the wirings WI may be provided on layers different from each other. Although not shown in the drawings, an intermediate layer may be interposed between the wiring WI and the electrode EL.

The electrode EL may include a plurality of electrode layers. The electrode EL may comprise two, three, four, five or six electrode layers. The electrode EL may include a first electrode layer ELL1 and a second electrode layer ELL2. The first electrode layer ELL1 may include first grains each having a first grain size. The first electrode layer ELL1 may include a first material. The second electrode layer ELL2 may be disposed on the first electrode layer ELL1. The second electrode layer ELL2 may include second grains each having a second grain size. The second electrode layer ELL2 may include a second material. The second material may be different from the first material. The second electrode layer ELL2 may have a thickness smaller than that of the first electrode layer ELL1.

The electrode EL may further include a third electrode layer ELL3. The third electrode layer ELL3 may include third grains each having a third grain size. The third electrode layer ELL3 may include a third material. The third material may be different from the second material. The third material may be the same as or different from the first material. The third electrode layer ELL3 may have a thickness greater than that of the second electrode layer ELL2.

FIG. 4A is a perspective view illustrating a flexible display device according to an exemplary embodiment of the present disclosure. FIG. 4B is a cross-sectional view taken along line II-II' of FIG. 4A. 4C and 4D are cross-sectional views of first wiring included in a flexible display device according to an exemplary embodiment of the present disclosure. 4E and 4F are cross-sectional views of second wiring included in a flexible display device according to an exemplary embodiment of the present disclosure.

Referring to FIGS. 4A , 4B, 4C, 4D, 4E, and 4F, the wiring WI may include a first wiring WI1 and a second wiring WI2 . An insulating layer IL may be disposed between the first wiring WI1 and the second wiring WI2. The first wiring WI1 may be disposed between the flexible substrate FB and the insulating layer IL, and the second wiring WI2 may be disposed on the insulating layer IL. The insulating layer IL may include an organic insulating material or an inorganic insulating material, but it should not be limited or limited thereto.

Referring to FIGS. 4A , 4B, 4C, and 4D, the first wiring WI1 may include a plurality of sub-wiring layers. The first wiring WI1 may include two, three, four, five or six sub-wiring layers, but it should not be limited to or by this. That is, the first wiring WI1 may include seven or more sub-wiring layers. Referring to FIGS. 4E and 4F , the second wiring WI2 may include a plurality of sub-wiring layers. The second wiring WI2 may include two, three, four, five or six sub-wiring layers, but it should not be limited to or by this. That is, the second wiring WI2 may include seven or more sub-wiring layers.

The first wiring WI1 may include a first sub-wiring layer WIL11 and a second sub-wiring layer WIL12. The first sub-wiring layer WIL11 may include first grains each having a first grain size. The first sub-wiring layer WIL11 may include a first material. The second sub-wiring layer WIL12 may be disposed on the first sub-wiring layer WIL11. The second sub-wiring layer WIL12 may include second grains each having a second grain size. The second sub-wiring layer WIL12 may include a second material. The second material may be different from the first material. The second sub-wiring layer WIL12 may have a thickness smaller than that of the first sub-wiring layer WIL11.

The first wiring WI1 may further include a third sub-wiring layer WIL13. The third sub-wiring layer WIL13 may include third grains each having a third grain size. The third sub-wiring layer WIL13 may include a third material. The third material may be different from the second material. The third material may be the same as or different from the first material. The third sub-wiring layer WIL13 may have a thickness greater than that of the second sub-wiring layer WIL12.

Referring to FIGS. 4A , 4E, and 4F, the second wiring WI2 may include a fourth sub-wiring layer WIL21 and a fifth sub-wiring layer WIL22. The fourth sub-wiring layer WIL21 may include first grains each having a first grain size. The fourth sub-wiring layer WIL21 may include the first material. The fifth sub-wiring layer WIL22 may be disposed on the fourth sub-wiring layer WIL21. The fifth sub-wiring layer WIL22 may include second grains each having a second grain size. The fifth sub-wiring layer WIL22 may include the second material. The second material may be different from the first material. The fifth sub-wiring layer WIL22 may have a thickness smaller than that of the fourth sub-wiring layer WIL21.

The second wiring WI2 may further include a sixth sub-wiring layer WIL23. The sixth sub-wiring layer WIL23 may include third grains each having a third grain size. The sixth sub-wiring layer WIL23 may include a third material. The third material may be different from the second material. The third material may be the same as or different from the first material. The sixth sub-wiring layer WIL23 may have a thickness greater than that of the fifth sub-wiring layer WIL22.

5A, 5B and 5C are perspective views illustrating a flexible display device according to an exemplary embodiment of the present disclosure.

Referring to FIGS. 5A , 5B, and 5C, the flexible display device 10 may operate in a first mode or a second mode. The flexible display device 10 may include a touch sensing unit TSU and a flexible display panel DP. The touch sensing unit TSU may be disposed on the flexible display panel DP in the first direction DR1.

The touch sensing unit TSU may include a touch bending part BF2 and a touch non-bending part NBF2. The touch bender BF2 may be bent in the first mode with respect to the bending axis BX1 extending in the second direction DR2, and may be stretched in the second mode. The touch bend BF2 may be connected to the touch non-bend NBF2. In the first mode and the second mode, the touch non-bending part NBF2 may not be bent.

The flexible display panel DP may include a panel bending portion BF1 and a panel non-bending portion NBF1. The panel bending portion BF1 may be bent in the first mode with respect to the bending axis BX1 extending in the second direction DR2, and may be stretched in the second mode. The panel bent portion BF1 may be connected to the panel non-bent portion NBF1. In the first mode and the second mode, the panel non-bending portion NBF1 may not be bent.

Referring to FIGS. 5A , 5B, and 5C, at least a portion of the touch sensing unit TSU and the flexible display panel DP may be bent in the first mode. Referring to FIG. 5B , the touch bending part BF2 of the touch sensing unit TSU and the panel bending part BF1 of the flexible display panel DP are stretched in the second mode.

The first mode may include a first bending mode and a second bending mode. Referring to FIG. 5A , in the first bending mode, the flexible display device 10 may be bent in one direction with respect to the bending axis BX1. In the first bending mode, the flexible display device 10 may be bent inward. When the flexible display device 10 is in the inner bending state, the distance between portions of the touch sensing units TSU facing each other behind the bending touch sensing unit TSU may be shorter than that of the flexible display panel DP behind the bendable flexible display panel DP. The distance between parts facing each other. In the inner bending state, the surface of the touch bending part BF2 of the touch sensing unit TSU may have a third curvature radius R3. The third radius of curvature R3 may be equal to or greater than about 1 mm and equal to or less than about 10 mm.

Referring to FIG. 5C , in the second bending mode, the flexible display device 10 may be bent in a direction opposite to the one direction of FIG. 5A with respect to the bending axis BX1 . In the second bending mode, the flexible display device 10 may be bent outward. When the flexible display device 10 is in the outwardly bent state, the distance between portions of the flexible display panel DP facing each other after bending the flexible display panel DP may be shorter than that of the touch sensing units TSU after bending the touch sensing unit TSU. The distance between the facing parts. In the outwardly curved state, the surface of the panel bending portion BF1 of the flexible display panel DP may have a fourth curvature radius R4. The fourth radius of curvature R4 may be equal to or greater than about 1 mm and equal to or less than about 10 mm.

Referring to FIGS. 1A , 1B, 1C, 2A, 2B, 5A, 5B, and 5C, at least one of the flexible display panel DP and the touch sensing unit TSU may include a conductive pattern CP. The conductive pattern CP may be included in at least one of the panel bending part BF1 and the touch bending part BF2.

The conductive pattern CP may include a first conductive pattern layer CPL1 and a second conductive pattern layer CPL2 disposed on the first conductive pattern layer CPL1. The first conductive pattern layer CPL1 may have a first thickness t1, and may include a first material. The second conductive pattern layer CPL2 may have a second thickness t2 smaller than the first thickness t1, and may include a second material different from the first material.

The conductive pattern CP may further include a third conductive pattern layer CPL3. The third conductive pattern layer CPL3 may be disposed on the second conductive pattern layer CPL2. The third conductive pattern layer CPL3 may have a third thickness t3 greater than the second thickness t2, and may include a third material.

FIG. 6A is a circuit diagram illustrating one pixel among pixels included in a flexible display device according to an exemplary embodiment of the present disclosure. 6B is a plan view illustrating one pixel among pixels included in a flexible display device according to an exemplary embodiment of the present disclosure. FIG. 6C is a cross-sectional view taken along line III-III' of FIG. 6B.

Hereinafter, the organic light emitting display panel will be described as the flexible display panel DP, but the flexible display panel DP should not be limited to the organic light emitting display panel. That is, the flexible display panel DP may be a liquid crystal display panel, a plasma display panel, an electrophoretic display panel, a MEMS display panel, or an electrowetting display panel.

1A, FIG. 1B, FIG. 1C, FIG. 2A, FIG. 2B, FIG. 5A, FIG. 5B, FIG. 5C, FIG. 6A and FIG. 6B, the flexible display panel DP may include a flexible base FB and a conductive pattern disposed on the flexible base FB CP. At least a portion of the conductive pattern CP may be included in the panel bending portion BF1. The conductive pattern CP may be included in the panel bent portion BF1 and may not be included in the panel non-bent portion NBF1. The conductive pattern CP may be included in each of the panel bent portion BF1 and the panel non-bent portion NBF1.

The conductive pattern CP may include a first conductive pattern layer CPL1 and a second conductive pattern layer CPL2 disposed on the first conductive pattern layer CPL1. The first conductive pattern layer CPL1 may have a first thickness t1, and may include a first material. The second conductive pattern layer CPL2 may have a second thickness t2 smaller than the first thickness t1, and may include a second material different from the first material.

The conductive pattern CP may further include a third conductive pattern layer CPL3. The third conductive pattern layer CPL3 may be disposed on the second conductive pattern layer CPL2. The third conductive pattern layer CPL3 may have a third thickness t3 greater than the second thickness t2, and may include a third material.

Gate line GL, data line DL, driving voltage line DVL, switching thin film transistor TFT1, driving thin film transistor TFT2, capacitor Cst, first semiconductor pattern SM1, second semiconductor pattern SM2, first electrode EL1 and second electrode described below At least one of EL2 may be a conductive pattern CP. The driving thin film transistor TFT2 may include a second gate electrode GE2, a second source electrode SE2, and a second drain electrode DE2. The capacitor Cst may include a first common electrode CE1 and a second common electrode CE2.

Referring to FIGS. 1A to 1C , 2A, 2B, 6A, and 6B, each pixel PX may be connected to a line part including a gate line GL, a data line DL, and a driving voltage line DVL. Each pixel PX may include thin film transistors TFT1 and TFT2 connected to a line part, an organic light emitting element OEL connected to the thin film transistors TFT1 and TFT2 , and a capacitor Cst.

In the present exemplary embodiment, one pixel can be connected to one gate line, one data line, and one driving voltage line, but it should not be limited or restricted thereto. That is, a plurality of pixels may be connected to one gate line, one data line, and one driving voltage line. In addition, one pixel may be connected to at least one gate line, at least one data line, and at least one driving voltage line.

The gate line GL extends in the third direction DR3. The data lines DL extend in the fourth direction DR4 to cross the gate lines GL. The driving voltage line DVL extends in the same direction as the data line DL (ie, the fourth direction DR4). The gate line GL applies a scan signal to the thin film transistors TFT1 and TFT2, the data line DL applies a data signal to the thin film transistors TFT1 and TFT2, and the driving voltage line DVL applies a driving voltage to the thin film transistors TFT1 and TFT2.

At least one of the gate line GL, the data line DL, and the driving voltage line DVL may include a first conductive pattern layer CPL1 and a second conductive pattern layer CPL2 disposed on the first conductive pattern layer CPL1. The first conductive pattern layer CPL1 may have a first thickness t1, and may include a first material. The second conductive pattern layer CPL2 may have a second thickness t2 smaller than the first thickness t1, and may include a second material different from the first material.

At least one of the gate line GL, the data line DL, and the driving voltage line DVL may further include a third conductive pattern layer CPL3. The third conductive pattern layer CPL3 may be disposed on the second conductive pattern layer CPL2. The third conductive pattern layer CPL3 may have a third thickness t3 greater than the second thickness t2, and may include a third material.

Each pixel PX may emit light having a specific color, for example, red light, green light, or blue light, but the color of light should not be limited or limited thereto. For example, each pixel may emit white light, cyan light, magenta light, or yellow light.

The thin film transistors TFT1 and TFT2 may include a driving thin film transistor TFT2 controlling the organic light emitting element OEL and a switching thin film transistor TFT1 switching the driving thin film transistor TFT2. In the present exemplary embodiment, each pixel PX may include two thin film transistors TFT1 and TFT2, but the number of transistors included in each pixel PX should not be limited to two. That is, each pixel PX may include one thin film transistor and one capacitor, or may include three or more thin film transistors and two or more capacitors.

At least one of the switching thin film transistor TFT1, the driving thin film transistor TFT2, and the capacitor Cst may include a first conductive pattern layer CPL1 and a second conductive pattern layer CPL2 disposed on the first conductive pattern layer CPL1. The first conductive pattern layer CPL1 may have a first thickness t1, and may include a first material. The second conductive pattern layer CPL2 may have a second thickness t2 smaller than the first thickness t1, and may include a second material different from the first material.

At least one of the switching thin film transistor TFT1, the driving thin film transistor TFT2, and the capacitor Cst may further include a third conductive pattern layer CPL3. The third conductive pattern layer CPL3 may be disposed on the second conductive pattern layer CPL2. The third conductive pattern layer CPL3 may have a third thickness t3 greater than the second thickness t2, and may include a third material.

The switching thin film transistor TFT1 may include a first gate electrode GE1, a first source electrode SE1, and a first drain electrode DE1. The first gate electrode GE1 may be connected to the gate line GL, and the first source electrode SE1 may be connected to the data line DL. The first drain electrode DE1 may be connected to the first common electrode CE1 through the fifth contact hole CH5. The switching thin film transistor TFT1 applies a data signal supplied through the data line DL to the driving thin film transistor TFT2 in response to a scan signal supplied through the gate line GL.

At least one of the first gate electrode GE1, the first source electrode SE1, and the first drain electrode DE1 may include a first conductive pattern layer CPL1 and a second conductive pattern layer CPL2 disposed on the first conductive pattern layer CPL1. The first conductive pattern layer CPL1 may have a first thickness t1, and may include a first material. The second conductive pattern layer CPL2 may have a second thickness t2 smaller than the first thickness t1, and may include a second material different from the first material.

At least one of the first gate electrode GE1, the first source electrode SE1, and the first drain electrode DE1 may further include a third conductive pattern layer CPL3. The third conductive pattern layer CPL3 may be disposed on the second conductive pattern layer CPL2. The third conductive pattern layer CPL3 may have a third thickness t3 greater than the second thickness t2, and may include a third material.

The driving thin film transistor TFT2 may include a second gate electrode GE2, a second source electrode SE2, and a second drain electrode DE2. The second gate electrode GE2 may be connected to the first common electrode CE1. The second source electrode SE2 may be connected to the driving voltage line DVL. The second drain electrode DE2 may be connected to the first electrode EL1 through the third contact hole CH3.

At least one of the second gate electrode GE2, the second source electrode SE2, and the second drain electrode DE2 may include a first conductive pattern layer CPL1 and a second conductive pattern layer CPL2 disposed on the first conductive pattern layer CPL1. The first conductive pattern layer CPL1 may have a first thickness t1, and may include a first material. The second conductive pattern layer CPL2 may have a second thickness t2 smaller than the first thickness t1, and may include a second material different from the first material.

At least one of the second gate electrode GE2, the second source electrode SE2, and the second drain electrode DE2 may further include a third conductive pattern layer CPL3. The third conductive pattern layer CPL3 may be disposed on the second conductive pattern layer CPL2. The third conductive pattern layer CPL3 may have a third thickness t3 greater than the second thickness t2, and may include a third material.

The first electrode EL1 may be connected to the second drain electrode DE2 of the driving thin film transistor TFT2. The second electrode may be applied with a common voltage, and the light emitting layer EML emits blue light in response to an output signal from the driving thin film transistor TFT2 to display an image. The first electrode EL1 and the second electrode EL2 will be described in detail later.

The capacitor Cst may be connected between the second gate electrode GE2 and the second source electrode SE2 of the driving thin film transistor TFT2, and may be charged with a data signal applied to the second gate electrode GE2 of the driving thin film transistor TFT2. The capacitor Cst may include a first common electrode CE1 connected to the first drain electrode DE1 through a sixth contact hole CH6 and a second common electrode CE2 connected to the driving voltage line DVL.

At least one of the first common electrode CE1 and the second common electrode CE2 may include a first conductive pattern layer CPL1 and a second conductive pattern layer CPL2 disposed on the first conductive pattern layer CPL1. The first conductive pattern layer CPL1 may have a first thickness t1, and may include a first material. The second conductive pattern layer CPL2 may have a second thickness t2 smaller than the first thickness t1, and may include a second material different from the first material.

At least one of the first common electrode CE1 and the second common electrode CE2 may further include a third conductive pattern layer CPL3. The third conductive pattern layer CPL3 may be disposed on the second conductive pattern layer CPL2. The third conductive pattern layer CPL3 may have a third thickness t3 greater than the second thickness t2, and may include a third material.

6A, 6B and 6C, the first flexible substrate FB1 may include but not limited to plastic materials or organic polymers, for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN ), polyimide, polyethersulfone, etc. The material for the first flexible substrate FB1 may be selected in consideration of mechanical strength, thermal stability, transparency, surface flatness, ease of handling, water resistance, and the like. The first flexible substrate FB1 may be transparent.

A base buffer layer (not shown) may be disposed on the first flexible base FB1. The base buffer layer can prevent impurities from diffusing into the switching thin film transistor TFT1 and the driving thin film transistor TFT2. The base buffer layer may be formed of silicon nitride (SiN _x ), silicon oxide (SiO _x ) or silicon oxynitride (SiO _x N _y ), and the base buffer layer may be omitted according to the material and process conditions of the first flexible substrate FB1.

The first semiconductor pattern SM1 and the second semiconductor pattern SM2 may be disposed on the first flexible substrate FB1. The first semiconductor pattern SM1 and the second semiconductor pattern SM2 may be formed of a semiconductor material, and serve as active layers of the switching thin film transistor TFT1 and the driving thin film transistor TFT2, respectively. Each of the first and second semiconductor patterns SM1 and SM2 may include a source part SA, a drain part DA, and a channel part CA disposed between the source part SA and the drain part DA. Each of the first and second semiconductor patterns SM1 and SM2 may be formed of an inorganic semiconductor or an organic semiconductor. The source part SA and the drain part DA are doped with n-type impurities or p-type impurities.

At least one of the first and second semiconductor patterns SM1 and SM2 may include a first conductive pattern layer CPL1 and a second conductive pattern layer CPL2 disposed on the first conductive pattern layer CPL1. The first conductive pattern layer CPL1 may have a first thickness t1, and may include a first material. The second conductive pattern layer CPL2 may have a second thickness t2 smaller than the first thickness t1, and may include a second material different from the first material.

At least one of the first and second semiconductor patterns SM1 and SM2 may further include a third conductive pattern layer CPL3. The third conductive pattern layer CPL3 may be disposed on the second conductive pattern layer CPL2. The third conductive pattern layer CPL3 may have a third thickness t3 greater than the second thickness t2, and may include a third material.

A gate insulating layer GI may be disposed on the first and second semiconductor patterns SM1 and SM2. The gate insulating layer GI may cover the first and second semiconductor patterns SM1 and SM2. The gate insulating layer GI may include an organic insulating material or an inorganic insulating material.

The first gate electrode GE1 and the second gate electrode GE2 may be disposed on the gate insulating layer GI. The first and second gate electrodes GE1 and GE2 may be disposed to cover portions corresponding to the channel portions CA of the first and second semiconductor patterns SM1 and SM2 , respectively.

The first insulating layer IL1 may be disposed on the first and second gate electrodes GE1 and GE2. The first insulating layer IL1 may cover the first and second gate electrodes GE1 and GE2 . The first insulating layer IL1 may include an organic insulating material or an inorganic insulating material.

The first source electrode SE1, the first drain electrode DE1, the second source electrode SE2, and the second drain electrode DE2 may be disposed on the first insulating layer IL1. The second drain electrode DE2 may be in contact with the drain portion DA of the second semiconductor pattern SM2 through the first contact hole CH1 formed through the gate insulating layer GI and the first insulating layer IL1, and the second source electrode SE2 may be in contact with the drain portion DA of the second semiconductor pattern SM2 through the first contact hole CH1 formed through the gate insulating layer GI and the first insulating layer IL1. The second contact hole CH2 formed by the insulating layer GI and the first insulating layer IL1 contacts the source portion SA of the second semiconductor pattern SM2. The first source electrode SE1 may make contact with a source portion (not shown) of the first semiconductor pattern SM1 through a fourth contact hole CH4 formed through the gate insulating layer GI and the first insulating layer IL1, and the first drain electrode DE1 through the fourth contact hole CH4 formed through the gate insulating layer GI and the first insulating layer IL1. The fifth contact hole CH5 formed through the gate insulating layer GI and the first insulating layer IL1 makes contact with the drain portion (not shown) of the first semiconductor pattern SM1.

A passivation layer PL may be disposed on the first source electrode SE1, the first drain electrode DE1, the second source electrode SE2, and the second drain electrode DE2. The passivation layer PL serves as a protection layer to protect the switching thin film transistor TFT1 and the driving thin film transistor TFT2, or as a planarization layer to planarize the upper surfaces of the switching thin film transistor TFT1 and the driving thin film transistor TFT2.

The first electrode EL1 may be disposed on the passivation layer PL. The first electrode EL1 may be a positive electrode. The first electrode EL1 may be connected to the second drain electrode DE2 of the driving thin film transistor TFT2 through the third contact hole CH3 formed through the passivation layer PL.

A pixel defining layer PDL may be disposed on the passivation layer PL to divide the light emitting layer EML corresponding to each pixel PX. The pixel defining layer PDL may expose an upper surface of the first electrode EL1, and may protrude from the first flexible substrate FB1. The pixel defining layer PDL may include, but is not limited to, metal fluoride ion compounds, for example, LiF, BaF ₂ , or CsF. When the metal fluoride ion compound has a predetermined thickness, the metal fluoride ion compound may have insulating properties. The pixel defining layer PDL may have a thickness equal to or greater than about 10 nm and equal to or less than about 100 nm. The pixel definition layer PDL will be described in detail later.

The organic light emitting element OEL may be disposed in a region surrounded by the pixel defining layer PDL. The organic light emitting element OEL may include a first electrode EL1, a hole transport region HTR, an emission layer EML, an electron transport region ETR, and a second electrode EL2.

The first electrode EL1 may have conductivity. The first electrode EL1 may be a pixel electrode or a positive electrode. The first electrode EL1 may include a first conductive pattern layer CPL1 and a second conductive pattern layer CPL2 disposed on the first conductive pattern layer CPL1. The first conductive pattern layer CPL1 may have a first thickness t1, and may include a first material. The second conductive pattern layer CPL2 may have a second thickness t2 smaller than the first thickness t1, and may include a second material different from the first material. The first electrode EL1 may further include a third conductive pattern layer CPL3. The third conductive pattern layer CPL3 may be disposed on the second conductive pattern layer CPL2. The third conductive pattern layer CPL3 may have a third thickness t3 greater than the second thickness t2, and may include a third material.

The first electrode EL1 may be a transmissive electrode, a transflective electrode or a reflective electrode. When the first electrode EL1 can be a transmissive electrode, the first electrode EL1 can include a transparent metal oxide, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO )Wait. When the first electrode EL1 can be a transflective electrode or a reflective electrode, the first electrode EL1 can include at least one of Al, Cu, Ti, Mo, Ag, Mg, Pt, Pd, Au, Ni, Nd, Ir and Cr. kind.

An organic layer may be disposed on the first electrode EL1. The organic layer may include an emission layer EML. The organic layer may further include a hole transport region HTR and an electron transport region ETR.

The hole transport region HTR may be disposed on the first electrode EL1. The hole transport region HTR may include at least one of a hole injection layer, a hole transport layer, a buffer layer, and an electron blocking layer.

The hole transport region HTR may have a single layer structure of a single material, a single layer structure of different materials, or a multilayer structure of a plurality of layers of different materials.

For example, the hole transport region HTR may have a structure in which single layers formed of different materials are stacked on each other, or a hole injection layer/hole transport layer, a hole injection layer/hole transport layer/buffer layer, a hole injection layer layer/buffer layer, hole transport layer/buffer layer or hole injection layer/hole transport layer/electron blocking layer structure.

Various methods (e.g., vacuum deposition, spin coating, casting, Langmuir-Blodgett, inkjet printing, laser printing, and laser-induced thermal imaging (LITI) methods, etc.) can be used to A hole transport region HTR is formed.

When the hole transport region HTR may include a hole injection layer, the hole transport region HTR may include, but is not limited to, phthalocyanine compounds such as copper phthalocyanine, DNTPD (N,N'-diphenyl-N,N'-bis- [4-(phenyl-m-tolyl-amino)-phenyl]-biphenyl-4,4'-diamine), m-MTDATA(4,4',4"-tris(3-methylphenyl phenylamino)triphenylamine), TDATA (4,4',4"-tris(N,N-diphenylamino)triphenylamine), 2TNATA (4,4',4"-tri{N-(2- Naphthyl)-N-phenylamino}triphenylamine), PEDOT/PSS (poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate)), PANI/DBSA (polyaniline/ dodecylbenzenesulfonic acid), PANI/CSA (polyaniline/camphorsulfonic acid), PANI/PSS (polyaniline/poly(4-styrenesulfonate)), etc.

When the hole transport region HTR may include a hole transport layer, the hole transport region HTR may include but not limited to carbazole derivatives (for example, N-phenylcarbazole, polyvinylcarbazole, etc.), fluorine derivatives , triphenylamine derivatives (for example, TPD (N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-bis amine), TCTA (4,4',4"-tris(N-carbazolyl)triphenylamine), etc.), NPB (N,N'-bis(1-naphthyl)-N,N'-diphenyl benzidine), TAPC (4,4'-cyclohexylene-bis[N,N-bis(4-methylphenyl)aniline]), etc.

The hole transport region HTR may further include a charge generation material. The charge generation material may be uniformly or non-uniformly distributed in the hole transport region HTR. The charge generation material may be, but is not limited to, a p-dopant. The p-dopant may be one of a quinone derivative, a metal oxide material, and a cyano group-containing compound, but it should not be limited or limited thereto. For example, p-dopants may include quinone derivatives (such as TCNQ (tetracyanoquinodimethane), F4-TCNQ (2,3,5,6-tetrafluoro-tetracyanoquinodimethane), etc.) or metal oxides material (such as tungsten oxide material, molybdenum oxide material, etc.), but it should not be limited or limited thereto.

The emission layer EML may be disposed on the hole transport region HTR. The light emitting layer EML may include light emitting materials having red, green, and blue colors, and may include fluorescent materials or phosphorescent materials. In addition, the light emitting layer EML may include a host and a dopant.

As hosts, for example, Alq3 (tris(8-quinolinolato)aluminum), CBP (4,4'-bis(N-carbazolyl)-1,1'-biphenyl), PVK (poly(N -vinylcarbazole)), ADN (9,10-di(naphthalene-2-yl)anthracene), TCTA (4,4',4"-tris(carbazol-9-yl)-triphenylamine), TPBi (1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene), TBADN (3-tert-butyl-9,10-di(naphthalene-2-yl)anthracene), DSA (di styrylarylene compounds), CDBP (4,4'-bis(9-carbazolyl)-2,2'-dimethyl-biphenyl), MADN (2-methyl-9,10-bis (naphthalen-2-yl)anthracene), however, it should not be limited thereto or by it.

When the light-emitting layer EML emits light having a red color, for example, the light-emitting layer EML may include a fluorescent material including PBD:Eu(DBM)3(Phen) (tris(dibenzoylmethane)phenanthroline europium) or perylene . When the light-emitting layer EML emits light having a red color, the dopant included in the light-emitting layer EML may be selected from metal complexes such as PIQIr(acac)(bis(1-phenylisoquinoline)iridium acetylacetonate ), PQIr (acac) (bis (1-phenylquinoline) iridium acetylacetonate), PQIr (tris (1-phenylquinoline) iridium), PtOEP (platinum octaethylporphyrin), etc.) or organic metal complexes.

When the light emitting layer EML emits light having a green color, for example, the light emitting layer EML may include a fluorescent material including Alq3 (tris(8-quinolinolato)aluminum). When the light-emitting layer EML emits light having a green color, the dopant included in the light-emitting layer EML may be selected from metal complexes such as Ir(ppy)3 (facial-tris(2-phenylpyridine)iridium) compounds or organometallic complexes.

When the light-emitting layer EML emits light having a blue color, for example, the light-emitting layer EML may include a fluorescent material made of spiro DPVBi, spiro 6P, DSB (distyryl benzene), DSA (distyryl arylene any one selected from the group consisting of PFO (polyfluorene)-based polymers, and PPV (polyparaphenylene vinylene)-based polymers. When the light emitting layer EML emits light having a blue color, a dopant included in the light emitting layer EML may be selected from metal complexes or organometallic complexes such as (4,6-F2ppy)2Irpic. The light emitting layer EML will be described in detail later.

The electron transport region ETR may be disposed on the light emitting layer EML. The electron transport region ETR may include at least one of a hole blocking layer, an electron transport layer, and an electron injection layer, but it should not be limited or limited thereto.

When the electron transport region ETR may comprise an electron transport layer, the electron transport region ETR may comprise Alq3 (tris(8-hydroxyquinoline)aluminum), TPBi(1,3,5-tris(1-phenyl-1H-benzo [d]imidazol-2-yl)benzene), BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), Bphen (4,7-diphenyl-1 ,10-phenanthroline), TAZ (3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole), NTAZ (4-(naphthalene- 1-yl)-3,5-diphenyl-4H-1,2,4-triazole), tBu-PBD(2-(4-biphenyl)-5-(4-tert-butylphenyl) -1,3,4-oxadiazole), BAlq (bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum), Bebq2( Bis(benzoquinoline-10-hydroxy)beryllium), ADN (9,10-bis(naphthalen-2-yl)anthracene) or mixtures thereof. The electron transport layer may have a thickness equal to or greater than about 100 angstroms and equal to or less than about 1000 angstroms, more preferably, a thickness equal to or greater than about 150 angstroms and equal to or less than about 500 angstroms. When the thickness of the electron transport layer is in the above-mentioned range, satisfactory electron transport properties can be secured without increasing the driving voltage.

When the electron transport region ETR may include an electron injection layer, the electron transport region ETR may include LiF, LiQ (lithium quinolate), _Li2O , BaO, NaCl, CsF, lanthanide metals such as Yb, or metal halides ( For example, RbCl, RbI, etc.), but it should not be limited or limited thereby. The electron transport layer may include a mixture of an electron transport material and an organometallic salt having insulating properties. The organometallic salt may have an energy bandgap of about 4 eV or greater. In detail, the organometallic salt may include metal acetate, metal benzoate, metal acetoacetate, metal acetylacetonate or metal stearate. The electron injection layer may have a thickness of about 1 angstrom to about 100 angstrom, but more preferably, a thickness of about 3 angstrom to about 90 angstrom. When the thickness of the electron injection layer is in the above-mentioned range, satisfactory electron injection properties can be secured without increasing the driving voltage.

As described above, the electron transport region ETR may include a hole blocking layer. The hole blocking layer includes BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) and Bphen (4,7-diphenyl-1,10-phenanthroline) at least one of , but it shall not be limited or limited thereby.

The second electrode EL2 may be disposed on the electron transport region ETR. The second electrode EL2 may be a common electrode or a negative electrode. The second electrode EL2 may include a first conductive pattern layer CPL1 and a second conductive pattern layer CPL2 disposed on the first conductive pattern layer CPL1. The first conductive pattern layer CPL1 may have a first thickness t1, and may include a first material. The second conductive pattern layer CPL2 may have a second thickness t2 smaller than the first thickness t1, and may include a second material different from the first material. The second electrode EL2 may further include a third conductive pattern layer CPL3. The third conductive pattern layer CPL3 may be disposed on the second conductive pattern layer CPL2. The third conductive pattern layer CPL3 may have a third thickness t3 greater than the second thickness t2, and may include a third material.

The second electrode EL2 may be a transmissive electrode, a transflective electrode, or a reflective electrode. When the second electrode EL2 can be a transmissive electrode, the second electrode EL2 can include Li, Ca, LiF/Ca, LiF/Al, Al, Mg, BaF ₂ , Ba, Ag, their compounds or their mixtures, for example, A mixture of Ag and Mg.

The second electrode EL2 may include an auxiliary electrode. The auxiliary electrode may comprise a layer obtained by depositing a material to face the light-emitting layer EML, such as transparent metal oxides of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO) Objects can be placed on this layer.

When the second electrode EL2 can be a transflective electrode or a reflective electrode, the second electrode EL2 can include Ag, Mg, Cu, Al, Pt, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF/Ca, LiF / Al, Mo, Ti, their compounds or their mixtures, for example, a mixture of Ag and Mg. In addition, the second electrode EL2 may have a multilayer structure of a reflective layer or a transflective layer formed of the above-mentioned materials and a transparent conductive layer formed of indium tin oxide, indium zinc oxide, zinc oxide, or indium tin zinc oxide.

When the organic light emitting element OEL may be a front surface emission type, the first electrode EL1 may be a reflective electrode, and the second electrode EL2 may be a transmissive electrode or a transflective electrode. When the organic light emitting element OEL is a rear surface emission type, the first electrode EL1 may be a transmissive electrode or a transflective electrode, and the second electrode EL2 may be a reflective electrode.

When voltages are respectively applied to the first electrode EL1 and the second electrode EL2 in the organic light-emitting element OEL, the holes injected from the first electrode EL1 can move to the light-emitting layer EML through the hole transport region HTR, and from the second electrode EL2 The injected electrons may move toward the light emitting layer EML through the electron transport region ETR. Holes and electrons may recombine in the light emitting layer EML to generate excitons, and the organic light emitting element OEL may emit light by returning the excitons from an excited state to a ground state.

A sealing layer SL may be disposed on the second electrode EL2. The sealing layer SL covers the second electrode EL2. The sealing layer SL may include at least one of an organic layer and an inorganic layer. The sealing layer SL may be a thin sealing layer. The sealing layer SL protects the organic light emitting element OEL.

FIG. 7A is a cross-sectional view illustrating a flexible display device according to an exemplary embodiment of the present disclosure. 7B is a plan view illustrating a touch sensing unit included in a flexible display device according to an exemplary embodiment of the present disclosure.

FIG. 8A is a cross-sectional view illustrating a flexible display device according to an exemplary embodiment of the present disclosure. 8B is a plan view illustrating a touch sensing unit included in a flexible display device according to an exemplary embodiment of the present disclosure.

Referring to FIGS. 7A , 7B, 8A, and 8B, the touch sensing unit TSU may be disposed on the flexible display panel DP. The touch sensing unit TSU may be disposed on the sealing layer SL. The touch sensing unit TSU may recognize a user's direct touch, a user's indirect touch, a direct touch of an object, or an indirect touch of an object. The term "indirect touch" used here means: since the user or object is separated from the touch sensing unit TSU by the distance that the touch sensing unit TSU recognizes the touch of the user or object, although the user or object does not touch the touch sensing unit TSU , but the touch sensing unit TSU also recognizes touch.

When a direct touch or an indirect touch occurs, a change in electrostatic capacitance occurs between the first sensing electrode Tx and the second sensing electrode Rx included in the sensing electrodes TE. The first sensing electrodes Tx and the second sensing electrodes Rx may be arranged in a grid shape. The sensing signal applied to the first sensing electrode Tx is delayed due to the variation of electrostatic capacitance, and then applied to the second sensing electrode Rx. The touch sensing unit TSU generates touch coordinates from the delay value of the sensing signal.

In the flexible display device 10 according to the present exemplary embodiment, the touch sensing unit TSU may operate in an electrostatic capacity mode, but it should not be limited or limited thereto. That is, the touch sensing unit TSU may operate in a resistive film mode, a self-capacitance mode, or a mutual-capacitance mode.

1A, 1B, 1C, 2A, 2B, 5A, 5B, 5C, 7A, 7B, 8A, and 8B, at least a portion of the conductive pattern CP may be included in the touch flexure BF2 middle. The conductive pattern CP may be included in the touch bent part BF2, but not included in the touch non-bent part NBF2. The conductive pattern CP may be included in each of the touch bent part BF2 and the touch non-bent part NBF2. The conductive pattern CP may include a first conductive pattern layer CPL1 and a second conductive pattern layer CPL2 disposed on the first conductive pattern layer CPL1. The first conductive pattern layer CPL1 may have a first thickness t1, and may include a first material. The second conductive pattern layer CPL2 may have a second thickness t2 smaller than the first thickness t1, and may include a second material different from the first material. The conductive pattern CP may further include a third conductive pattern layer CPL3. The third conductive pattern layer CPL3 may be disposed on the second conductive pattern layer CPL2. The third conductive pattern layer CPL3 may have a third thickness t3 greater than the second thickness t2, and may include a third material.

At least one of the sensing electrode TE, the first connection line TL1 , the second connection line TL2 , the first fanout line PO1 , the second fanout line PO2 , the first bridge BD1 , and the second bridge BD2 , which will be described in detail later, One may be a conductive pattern CP.

The sensing electrode TE may be disposed on the sealing layer SL. Although not shown in the drawing, an additional flexible substrate may be disposed between the sensing electrode TE and the sealing layer SL. The sensing electrode TE may include a first conductive pattern layer CPL1 and a second conductive pattern layer CPL2 disposed on the first conductive pattern layer CPL1. The first conductive pattern layer CPL1 may have a first thickness t1, and may include a first material. The second conductive pattern layer CPL2 may have a second thickness t2 smaller than the first thickness t1, and may include a second material different from the first material. The sensing electrode TE may further include a third conductive pattern layer CPL3. The third conductive pattern layer CPL3 may be disposed on the second conductive pattern layer CPL2. The third conductive pattern layer CPL3 may have a third thickness t3 greater than the second thickness t2, and may include a third material.

An insulating layer IL2 may be disposed on the first sensing electrode Tx. The insulating layer IL2 may include, for example, silicon nitride, but according to an embodiment, the insulating layer IL2 may include an organic material. The second sensing electrode Rx may be disposed above the first sensing electrode Tx. The second sensing electrode Rx may include a first conductive pattern layer CPL1 and a second conductive pattern layer CPL2 disposed on the first conductive pattern layer CPL1. The first conductive pattern layer CPL1 may have a first thickness t1, and may include a first material. The second conductive pattern layer CPL2 may have a second thickness t2 smaller than the first thickness t1, and may include a second material different from the first material. The second sensing electrode Rx may further include a third conductive pattern layer CPL3. The third conductive pattern layer CPL3 may be disposed on the second conductive pattern layer CPL2. The third conductive pattern layer CPL3 may have a third thickness t3 greater than the second thickness t2, and may include a third material.

The organic layer ORL may be disposed on the second sensing electrode Rx. The organic layer ORL may include organic materials.

At least one of the first sensing electrode Tx and the second sensing electrode Rx may be a conductive pattern CP. For example, the sealing layer SL may include silicon nitride, and each of the first sensing electrodes Tx may include a first conductive pattern layer CPL1 including titanium, a second conductive pattern layer CPL2 including aluminum, and a third conductive pattern including titanium. Layer CPL3. The insulating layer IL2 may include silicon nitride, and each of the second sensing electrodes Rx may include a first conductive pattern layer CPL1 including aluminum, a second conductive pattern layer CPL2 including titanium, and a third conductive pattern layer CPL3 including aluminum. .

For example, the sealing layer SL may include silicon nitride, each of the first sensing electrodes Tx may include a layer including aluminum, the insulating layer IL2 may include an organic material, and each of the second sensing electrodes Rx may include a layer including The first conductive pattern layer CPL1 of aluminum and the second conductive pattern layer CPL2 including titanium.

Referring to FIGS. 8A and 8B , the first sensing electrode Tx and the second sensing electrode Rx may be disposed on the same layer. The first sensing electrode Tx and the second sensing electrode Rx may be disposed on the sealing layer SL. The first sensing electrodes Tx are arranged in the fifth and sixth directions DR5 and DR6 to be separated from each other.

The first sensing electrodes Tx separated from each other in the fifth direction DR5 may be connected to each other through the first bridge BD1. The second sensing electrodes Rx may be arranged in fifth and sixth directions DR5 and DR6 to be separated from each other. The second sensing electrodes Rx separated from each other in the sixth direction DR6 may be connected to each other through the second bridge BD2. The second bridge BD2 may be provided on the first bridge BD1. Although not shown in the drawing, an insulating layer may be disposed between the first bridge BD1 and the second bridge BD2.

Each of the first bridge BD1 and the second bridge BD2 may include a first conductive pattern layer CPL1 and a second conductive pattern layer CPL2 disposed on the first conductive pattern layer CPL1. The first conductive pattern layer CPL1 may have a first thickness t1, and may include a first material. The second conductive pattern layer CPL2 may have a second thickness t2 smaller than the first thickness t1, and may include a second material different from the first material. Each of the first bridge BD1 and the second bridge BD2 may further include a third conductive pattern layer CPL3. The third conductive pattern layer CPL3 may be disposed on the second conductive pattern layer CPL2. The third conductive pattern layer CPL3 may have a third thickness t3 greater than the second thickness t2, and may include a third material.

The connection lines TL1 and TL2 may be electrically connected to the sensing electrodes TE. The connection lines TL1 and TL2 may include a first conductive pattern layer CPL1 and a second conductive pattern layer CPL2 disposed on the first conductive pattern layer CPL1. The first conductive pattern layer CPL1 may have a first thickness t1, and may include a first material. The second conductive pattern layer CPL2 may have a second thickness t2 smaller than the first thickness t1, and may include a second material different from the first material. The connection lines TL1 and TL2 may further include a third conductive pattern layer CPL3. The third conductive pattern layer CPL3 may be disposed on the second conductive pattern layer CPL2. The third conductive pattern layer CPL3 may have a third thickness t3 greater than the second thickness t2, and may include a third material.

The connection lines TL1 and TL2 may include first and second connection lines TL1 and TL2. The first connection line TL1 may be connected to the first sensing electrode Tx and the first fan-out line PO1. The second connection line TL2 may be connected to the second sensing electrode Rx and the second fan-out line PO2.

The fan-out lines PO1 and PO2 may be connected to connection lines TL1 and TL2 and pads (or “pads”) PD1 and PD2 . The fan-out lines PO1 and PO2 may include a first fan-out line PO1 and a second fan-out line PO2. The first fan-out line PO1 may be connected to the first connection line TL1 and the first pad part PD1. The second fan-out line PO2 may be connected to the second connection line TL2 and the second pad part PD2.

The first pad part PD1 and the second pad part PD2 may be electrically connected to the sensing electrode TE. The first pad part PD1 and the second pad part PD2 may include a first conductive pattern layer CPL1 and a second conductive pattern layer CPL2 disposed on the first conductive pattern layer CPL1. The first conductive pattern layer CPL1 may have a first thickness t1, and may include a first material. The second conductive pattern layer CPL2 may have a second thickness t2 smaller than the first thickness t1, and may include a second material different from the first material.

The first pad part PD1 and the second pad part PD2 may further include a third conductive pattern layer CPL3. The third conductive pattern layer CPL3 may be disposed on the second conductive pattern layer CPL2. The third conductive pattern layer CPL3 may have a third thickness t3 greater than the second thickness t2, and may include a third material.

The pad parts PD1 and PD2 may include a first pad part PD1 and a second pad part PD2. The first pad part PD1 may be connected to the first fan-out line PO1. The first pad part PD1 may be electrically connected to the first sensing electrode Tx. The second pad part PD2 may be connected to the second fan-out line PO2. The second pad part PD2 may be electrically connected to the second sensing electrode Rx.

9A and 9B are cross-sectional views illustrating sensing electrodes included in a touch sensing unit according to an exemplary embodiment of the present disclosure.

Referring to FIGS. 9A and 9B , the sensing electrode TE may include a plurality of sensing electrode layers. The sensing electrode TE may include, for example, two, three, four, five or six sensing electrode layers, but it should not be limited or limited thereto. The sensing electrode TE may include seven or more sensing electrode layers.

The sensing electrode TE may include a first sensing electrode layer TEL1 and a second sensing electrode layer TEL2. The first sensing electrode layer TEL1 may include first grains each having a first grain size. The first sensing electrode layer TEL1 may include a first material. The second sensing electrode layer TEL2 may be disposed on the first sensing electrode layer TEL1. The second sensing electrode layer TEL2 may include second grains each having a second grain size. The second sensing electrode layer TEL2 may include a second material. The second material is different from the first material. The second sensing electrode layer TEL2 may have a thickness smaller than that of the first sensing electrode layer TEL1.

The sensing electrode TE may further include a third sensing electrode layer TEL3. The third sensing electrode layer TEL3 may include third grains each having a third grain size. The third sensing electrode layer TEL3 may include a third material. The third material may be different from the second material. The third material may be the same as or different from the first material. The third sensing electrode layer TEL3 may have a thickness greater than that of the second sensing electrode layer TEL2.

9C and 9D are cross-sectional views illustrating wires included in a touch sensing unit according to an exemplary embodiment of the present disclosure.

Referring to FIGS. 9C and 9D , the wires TL1 , TL2 , PO1 , and PO2 include a plurality of wire layers. The lines TL1 , TL2 , PO1 and PO2 may include two, three, four, five or six line layers, but they should not be limited or limited thereto. The lines TL1, TL2, PO1, and PO2 may include seven or more line layers. Air layers may be provided between the wire layers.

The lines TL1, TL2, PO1, and PO2 may include first and second line layers TLL1 and TLL2. The first line layer TLL1 may include first grains each having a first grain size. The first line layer TLL1 may include a first material. The second line layer TLL2 may be disposed on the first line layer TLL1. The second line layer TLL2 may include second grains each having a second grain size. The second line layer TLL2 may include a second material. The second material is different from the first material. The second line layer TLL2 may have a thickness smaller than that of the first line layer TLL1.

The lines TL1, TL2, PO1, and PO2 may also include a third line layer TLL3. The third line layer TLL3 may include third grains each having a third grain size. The third line layer TLL3 may include a third material. The third material may be different from the second material. The third material may be the same as or different from the first material. The third line layer TLL3 may have a thickness greater than that of the second line layer TLL2.

10A , 10B, 10C, 10D, 10E and 10F are perspective views illustrating various devices to which a flexible display device may be applied according to an exemplary embodiment of the present disclosure.

Referring to FIGS. 10A , 10B, 10C, 10D, 10E, and 10F, the flexible display device according to exemplary embodiments may be applied to various devices. For example, the flexible display device may be applied to a mobile phone, a television, a computer, a wearable display device, a rollable display device, a foldable display device, an automatic vehicle display device, or an ornamental display device, etc.

FIG. 10A shows a mobile phone to which a flexible display device can be applied, and FIG. 10B shows a wearable display device to which a flexible display device can be applied. As long as devices such as wrist watches, glasses, head-up displays, etc. can be worn on the human body, the wearable display device should not be limited to specific devices.

FIG. 10C illustrates a rollable display device to which a flexible display device can be applied. A rollable display device means a display device in which a display panel can be rolled or stretched with respect to a roll shaft included in a case. FIG. 10D shows a foldable display device to which a flexible display device can be applied. A foldable display device refers to a display device that is folded or extended with respect to one folding axis.

FIG. 10E shows an automatic vehicle display device to which a flexible display device can be applied. The automatic vehicle display means a display device in vehicles such as automobiles, airplanes, ships, trains, and the like. The automatic vehicle display device may be a foldable display device or a rollable display device as long as it can be installed in a vehicle.

FIG. 10F shows an ornament display device to which a flexible display device can be applied. FIG. 10F shows a display device placed on a part of a building (eg, a column), but it should not be limited or limited thereto.

The degree of deformation of the conductive pattern may become different according to dislocation. As dislocations increase, the degree of deformation of the conductive pattern increases. That is, as the dislocation increases, the flexibility of the conductive pattern becomes more difficult when bent. Dislocations decrease as the density of grain boundaries increases. Therefore, in order to increase the density of grain boundaries, it may be necessary to reduce the grain size of each of the conductive patterns.

A conductive pattern of a conventional flexible display device may be formed to have one layer, and thus, it may be difficult to reduce the size of the conductive pattern. In addition, in the case where the conductive pattern includes one layer, it may be difficult to form the conductive pattern including grains having a uniform grain size. Therefore, the dislocation of the conductive pattern of the conventional flexible display device may be large, and thus, it may be difficult to ensure flexibility for bending of the conductive pattern. Accordingly, when the flexible display device may be repeatedly bent, cracks or disconnections occur in the conductive pattern, and thus, the reliability of the flexible display device may be degraded.

In addition, since it may be difficult to ensure flexibility for bending of the conductive pattern, cracks or disconnections may occur in the conductive pattern when the conductive pattern is repeatedly bent in one direction and in a direction opposite to the one direction. As described above, the conductive pattern included in the flexible display device according to the present exemplary embodiment may include a first conductive pattern layer having a first thickness and including a first material and a layer having a second thickness and including a material different from the first material. A second conductive pattern layer of the second material. The conductive pattern included in the flexible display device according to the present exemplary embodiment may include a second conductive pattern layer including a second material to adjust the grain size of the first conductive pattern layer. In addition, since the conductive pattern included in the flexible display device according to the present exemplary embodiment may include a plurality of layers including materials different from each other, the size of the grains may be relatively smaller and relatively more uniform than conventional grains, Therefore, flexibility for bending of the conductive pattern can be easily ensured. Accordingly, although the flexible display device may be repeatedly bent, the occurrence probability of cracks or disconnections of the conductive pattern may be significantly smaller than that of the conductive pattern included in the conventional flexible display device. Therefore, reliability of the flexible display device according to exemplary embodiments of the present disclosure may be improved.

In addition, since the flexible display device according to an exemplary embodiment of the present disclosure ensures flexibility for bending, even if the flexible display device is repeatedly bent in one direction and a direction opposite to the one direction, it is possible to significantly The occurrence probability of cracks or disconnections of the conductive pattern is reduced.

Hereinafter, a method of manufacturing a flexible display device according to an exemplary embodiment of the present disclosure is described. In the following description of the method of manufacturing the flexible display device, features different from those described for the flexible display device will be mainly described.

FIG. 11 is a flowchart illustrating a method of manufacturing a flexible display device according to an exemplary embodiment of the present disclosure.

Referring to FIGS. 1A , 1B, 1C, 2A, 2B and 11 , the manufacturing method of the flexible display device 10 may include preparing a flexible substrate FB ( S100 ) and disposing a conductive pattern CP on the flexible substrate FB.

The flexible substrate FB may include, but is not limited to, plastic materials or organic polymers, such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide, polyethersulfone, and the like. The material for the flexible substrate FB may be selected in consideration of mechanical strength, thermal stability, transparency, surface flatness, ease of handling, water resistance, and the like. The flexible base FB may be transparent.

A conductive pattern CP may be disposed on the flexible substrate FB. Disposing the conductive pattern CP may include disposing a first conductive pattern layer CPL1 having a first thickness t1 ( S200 ) and disposing a second conductive pattern layer CPL2 having a second thickness t2 on the first conductive pattern layer CPL1 ( S300 ). The step of disposing the first conductive pattern layer CPL1 ( S200 ) may be performed by supplying the first gas and disposing the first conductive pattern layer CPL1 having the first thickness t1 on the flexible substrate FB. Providing the second conductive pattern layer CPL2 may be performed by supplying a second gas different from the first gas and disposing the second conductive pattern layer CPL2 having a second thickness t2 smaller than the first thickness t1 on the first conductive pattern layer CPL1. Step of (S300).

The first conductive pattern layer CPL1 may have a first thickness t1 equal to or greater than about 100 angstroms and equal to or less than about 1500 angstroms. The first conductive pattern layer CPL1 may include first grains GR1 each having a first grain size. The first grains GR1 of the first conductive pattern layer CPL1 have a first grain size equal to or greater than about 100 angstroms and equal to or less than about 1000 angstroms. The first conductive pattern layer CPL1 may include a first material. The first material may include at least one of metal, metal alloy, metal oxide, and transparent conductive oxide, but it should not be limited or limited thereto. In the first conductive pattern layer CPL1, about 200 crystal grains to about 1200 crystal grains are arranged within a unit area of about 1.0 square micrometers (μm ² ).

The second conductive pattern layer CPL2 may prevent the first grains GR1 of the first conductive pattern layer CPL1 from being connected to the second grains GR2 of the second conductive pattern layer CPL2. The second conductive pattern layer CPL2 may control the first grain size of the first conductive pattern layer CPL1. For example, the second conductive pattern layer CPL2 may prevent the first grain size of the first conductive pattern layer CPL1 from being excessively increased.

The second conductive pattern layer CPL2 may have a second thickness t2 equal to or greater than about 10 angstroms and equal to or less than about 100 angstroms. The second thickness t2 may be smaller than the first thickness t1. The second conductive pattern layer CPL2 may include second grains GR2 each having a second grain size. The second conductive pattern layer CPL2 may include a second material. The second material may be different from the first material. The second material may include at least one of metal, metal alloy, metal oxide, and transparent conductive oxide, but it should not be limited or limited thereto.

At least one of providing the first conductive pattern layer CPL1 (S200) and providing the second conductive pattern layer CPL2 (S300) may be performed by sputtering at least one of metal, metal alloy, metal oxide, and transparent conductive oxide . For example, at least one of the first conductive pattern layer CPL1 and the second conductive pattern layer CPL2 may be formed by a sputtering process performed at room temperature during a period equal to or longer than about one minute and equal to or shorter than about three minutes. . For example, the first conductive conductor may be formed by a sputtering process performed at a temperature equal to or greater than about 50 degrees and equal to or less than about 60 degrees during a period equal to or longer than about one minute and equal to or shorter than about three minutes. At least one of the pattern layer CPL1 and the second conductive pattern layer CPL2.

The metal may include, but is not limited to, at least one of Al, Cu, Ti, Mo, Ag, Mg, Pt, Pd, Au, Ni, Nd, Ir, and Cr.

The transparent conductive oxide may include but not limited to at least one of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO).

Disposing the conductive pattern CP may further include disposing a third conductive pattern layer CPL3 on the second conductive pattern layer CPL2. The step of providing the third conductive pattern layer CPL3 may be performed by providing a third gas different from the second gas and disposing the third conductive pattern layer CPL3 having a third thickness t3 on the second conductive pattern layer CPL2.

The third conductive pattern layer CPL3 may have a third thickness t3 equal to or greater than about 100 angstroms and equal to or less than about 1500 angstroms. The third conductive pattern layer CPL3 may include third grains GR3 each having a third grain size. The third grains GR3 of the third conductive pattern layer CPL3 have a third grain size equal to or greater than about 100 angstroms and equal to or less than about 1000 angstroms. The third conductive pattern layer CPL3 may include a third material. The third material may be different from the second material. The third material may be the same as or different from the first material. The third material may include at least one of metal, metal alloy, metal oxide, and transparent conductive oxide, but it should not be limited or limited thereto. In the third conductive pattern layer CPL3, about 200 crystal grains to about 1200 crystal grains are arranged within a unit area of about 1.0 square micrometer (μm ² ).

Each of disposing the first conductive pattern layer CPL1 ( S200 ), disposing the second conductive pattern layer CPL2 ( S300 ), and disposing the third conductive pattern layer CPL3 may be performed without plasma.

The step of setting the first conductive pattern layer CPL1 (S200) may be performed by using aluminum gas, the step of setting the second conductive pattern layer CPL2 (S300) may be performed by using titanium gas, and the step of setting the third conductive pattern layer may be performed by using aluminum gas. The steps of the conductive pattern layer CPL3. In this case, the first conductive pattern layer CPL1, the second conductive pattern layer CPL2, and the third conductive pattern layer CPL3 may have thicknesses of about 1500 angstroms, about 50 angstroms, and about 1500 angstroms, respectively.

When the step of providing the first conductive pattern layer CPL1 (S200) is performed by using aluminum gas, the step of providing the second conductive pattern layer CPL2 (S300) may be performed by using titanium gas, and the setting may be performed by using aluminum gas. The steps of the third conductive pattern layer CPL3 , each of disposing the first conductive pattern layer CPL1 ( S200 ), disposing the second conductive pattern layer CPL2 ( S300 ), and disposing the third conductive pattern layer may be performed five times.

The step of providing the first conductive pattern layer CPL1 (S200) may be performed by using aluminum gas, the step of providing the second conductive pattern layer CPL2 (S300) may be performed by using oxygen gas, and the step of providing the third conductive pattern layer may be performed by using aluminum gas. Steps for patterning layer CPL3.

The disposition of the conductive pattern CP may be configured to include using a first gas to form a first layer, using a second gas different from the first gas to form a second layer, using a third gas different from the second gas to form a third layer, and using a second gas different from the second gas to form a third layer. layers, and etch the first, second, and third layers to form a first conductive pattern layer CPL1, a second conductive pattern layer CPL2, and a third conductive pattern layer CPL3.

As another example, the setting of the conductive pattern CP may be configured to include using the first gas to form the first layer, etching the first layer using the first mask to form the first conductive pattern layer CPL1, using a gas different from the first gas second gas to form the second layer, use the second mask to etch the second layer to form the second conductive pattern layer CPL2, use a third gas different from the second gas to form the third layer and use the third mask to etch the first layer three layers to form the third conductive pattern layer CPL3.

The degree of deformation of the conductive pattern becomes different depending on the dislocation. As dislocations increase, the degree of deformation of the conductive pattern increases. That is, as the dislocation increases, the flexibility of the conductive pattern becomes more difficult when bent. Dislocations decrease as the density of grain boundaries increases. Therefore, it may be necessary to reduce the grain size of each of the conductive patterns to increase the density of grain boundaries.

A conductive pattern of a conventional flexible display device is formed to have one layer, and thus, it is difficult to reduce the size of the conductive pattern. In addition, in the case where the conductive pattern includes one layer, it is difficult to form the conductive pattern including grains having a uniform grain size. Therefore, the dislocation of the conductive pattern of the conventional flexible display device is large, and thus, it is difficult to secure the flexibility for bending of the conductive pattern. Accordingly, when the flexible display device is repeatedly bent, cracks or disconnections occur in the conductive pattern, and thus, the reliability of the flexible display device may be degraded.

In addition, since it is difficult to ensure flexibility for bending of the conductive pattern, cracks or disconnections occur in the conductive pattern when the conductive pattern is repeatedly bent in one direction and in a direction opposite to the one direction. As described above, the conductive pattern included in the flexible display device manufactured by the manufacturing method according to the present exemplary embodiment may include a first conductive pattern layer having a first thickness and including a first material and a layer having a second thickness and including a first conductive pattern layer. A second conductive pattern layer of a second material different from the first material. The conductive pattern included in the flexible display device manufactured by the manufacturing method according to the present exemplary embodiment may include a second conductive pattern layer including a second material to adjust the grain size of the first conductive pattern layer. In addition, since the conductive pattern included in the flexible display device manufactured by the manufacturing method according to the present exemplary embodiment may include a plurality of layers including materials different from each other, the size of a grain may be relatively smaller than that of a conventional grain. And relatively more uniform, therefore, flexibility for bending of the conductive pattern can be easily ensured. Accordingly, although the flexible display device may be repeatedly bent, the occurrence probability of cracks or disconnections of the conductive pattern may be significantly smaller than that of the conductive pattern included in the conventional flexible display device. Therefore, reliability of the flexible display device according to exemplary embodiments of the present disclosure may be improved.

In addition, since the flexible display device according to an exemplary embodiment of the present disclosure ensures flexibility for bending, even if the flexible display device is repeatedly bent in one direction and a direction opposite to the one direction, it is possible to significantly reduce the The probability of occurrence of cracks or disconnections in the conductive pattern.

Hereinafter, a flexible display device according to the present disclosure will be described in detail with reference to various embodiment examples.

Example 1 of the embodiment:

An aluminum conductive pattern layer having a thickness of about 50 nm was formed by sputtering aluminum on a polycarbonate (PC) substrate at a temperature of about 60° C. during about two minutes, the process was performed six times, and the aluminum conductive pattern An aluminum oxide conductive layer is formed between the layers. A conductive pattern including six aluminum conductive pattern layers and five aluminum oxide conductive layers alternately stacked with the aluminum conductive pattern layers was formed.

Example 2 of the embodiment:

A conductive pattern was formed by the same process as that shown in Embodiment Example 1, except that the sputtering process was performed at a temperature of about 20° C. instead of about 60° C.

Example 3 of the embodiment:

Aluminum is sputtered on the PC substrate to form a first aluminum conductive pattern layer with a thickness of about 150 nm, and titanium is sputtered on the first aluminum conductive pattern layer to form a titanium conductive pattern layer with a thickness of about 5 nm. Aluminum was sputtered on the conductive pattern layer to form a second aluminum conductive pattern layer having a thickness of about 150 nm.

Comparison example 1:

A conductive pattern having a thickness of about 300 nm was formed by the same process as that shown in Embodiment Example 1, except that aluminum was sputtered on the PC substrate at a temperature of about 60° C. during two minutes.

Comparison example 2:

A conductive pattern was formed through the same process as that shown in Comparative Example 1, except that the sputtering process was performed at a temperature of about 20° C. instead of about 60° C.

Comparison example 3:

The conductive pattern was formed by the same process as that shown in Embodiment Example 1, except that the conductive pattern formed by sputtering aluminum on a polycarbonate (PC) substrate had a thickness of about 200 nm.

1. Measurement

1) Measurement of grain size:

The crystal grain size was measured by collecting scanning electron microscope (SEM) images of cross-sections of Example 1 to Example 3, and Comparative Example 1 to Comparative Example 3. SEM images were collected using a Helios 450 (FEI Company). The SEM images of Embodiment Example 1, Comparative Example 1, and Comparative Example 3 are shown in FIG. 12A , and the SEM images of Embodiment Example 1, Embodiment Example 2, Comparative Example 1, and Comparative Example 2 are shown in FIG. 12B . The particle size can be given by Table 1 below. In addition, SEM images of cross-sections of Embodiment Example 1, Embodiment Example 2, Comparative Example 1, and Comparative Example 2 are shown in FIG. 13 .

Table 1

Grain size (nm) Embodiment Example 1 32 Embodiment Example 3 97.7 Comparative example 1 196 Comparative example 2 119

2) Check if disconnection occurs due to inner bending and outer bending

Disconnection due to inner bending and outer bending of Embodiment Example 1 to Embodiment Example 3, Comparative Example 1, and Comparative Example 3 were examined. Disconnection due to inward bending in Comparative Example 1 and Comparative Example 3 is shown in FIG. 14 .

3) Measure the change in resistance due to inner and outer bending

The resistance change due to inner bending in Embodiment Example 1 to Embodiment Example 3, Comparative Example 1 and Comparative Example 3 and the resistance change due to outer bending in Embodiment Example 1 to Embodiment Example 3, Comparative Example 1 and Comparative Example 3 were measured. resulting in a change in resistance. The resistance change due to inner bending is given in Table 2 below, and the resistance change due to outer bending is given in Table 3 below.

Table 2

table 3

2. Measurement results

1) Measurement of grain size:

12A, FIG. 12B, FIG. 13 and Table 1, the grain size of each of Embodiment Example 1 to Embodiment Example 3 is smaller than that of each of Comparative Example 1 to Comparative Example 3 size.

2) Check if disconnection occurs due to inner bending and outer bending

Disconnection due to inner bending and outer bending did not occur in Embodiment Example 1 to Embodiment Example 3, but disconnection due to inner bending and outer bending occurred in Comparative Example 1 and Comparative Example 3, as shown in FIG. 14 shown in .

3) Measure the resistance change caused by inner and outer bending

Referring to Table 2 and Table 3, in Embodiment Example 1 to Embodiment Example 3, the change in resistance due to inner bending and outer bending is relatively small, but in Comparative Example 1 and Comparative Example 3, due to inner bending and outer bending The resulting resistance change is relatively large.

While certain exemplary embodiments and implementations have been described herein, other embodiments and modifications will be apparent from this description. Accordingly, the inventive concept is not limited to such embodiments, but extends to the broader scope of the presented claims and various obvious modifications and equivalent arrangements.

Claims (36)

1. A flexible display device, said flexible display device comprising: a flexible substrate, including a bend; and The conductive pattern includes a first conductive pattern layer and a second conductive pattern layer disposed on the first conductive pattern layer, wherein, at least a part of the conductive pattern is disposed on the bent portion, The first conductive pattern layer has a first thickness and includes a first material, The second conductive pattern layer has a second thickness smaller than the first thickness and includes a second material different from the first material. 2. The flexible display device according to claim 1, wherein the first thickness is equal to or greater than 100 angstroms and equal to or less than 1500 angstroms, and the second thickness is equal to or greater than 10 angstroms and equal to or less than 100 angstroms. 3. The flexible display device according to claim 1, wherein each of the first material and the second material comprises a metal, an alloy of the metal, an oxide of the metal, and a transparent conductive oxide at least one of the 4. The flexible display device according to claim 3, wherein the metal comprises at least one of Al, Cu, Ti, Mo, Ag, Mg, Pt, Pd, Au, Ni, Nd, Ir and Cr. 5. The flexible display device according to claim 3, wherein the transparent conductive oxide comprises at least one of indium tin oxide, indium zinc oxide, zinc oxide and indium tin zinc oxide. 6. The flexible display device according to claim 1, wherein the first conductive pattern layer has a first grain size, the second conductive pattern layer has a second grain size, and the first conductive pattern layer The average grain size is larger than the average grain size of the second conductive pattern layer. 7. The flexible display device of claim 6, wherein each of the first grain size and the second grain size is equal to or greater than 100 angstroms and equal to or less than 1000 angstroms. 8. The flexible display device according to claim 1, wherein the second conductive pattern layer controls a grain size of the first conductive pattern layer. 9. The flexible display device according to claim 1, wherein the conductive pattern further comprises a third conductive pattern layer disposed on the second conductive pattern layer, and the third conductive pattern layer has a higher thickness than the first conductive pattern layer. The second thickness is greater than the third thickness and includes a third material. 10. The flexible display device according to claim 9, wherein each of the first thickness and the third thickness is equal to or greater than 100 angstroms and equal to or less than 1500 angstroms, and the second thickness is equal to or greater than 10 Angstroms and equal to or less than 100 Angstroms. 11. The flexible display device of claim 9, wherein the third material is different from the second material. 12. The flexible display device of claim 9, wherein the first material comprises aluminum, the second material comprises titanium, and the third material comprises aluminum. 13. The flexible display device according to claim 12, wherein the conductive pattern comprises five stacked patterns, each of the stacked patterns comprising: the first conductive pattern layer; The second conductive pattern layer is disposed on the first conductive pattern layer; and The third conductive pattern layer is disposed on the second conductive pattern layer. 14. The flexible display device according to claim 12, wherein the first thickness is 1500 angstroms, the second thickness is 50 angstroms, and the third thickness is 1500 angstroms. 15. The flexible display device according to claim 9, wherein the first material comprises aluminum, the second material comprises alumina, and the third material comprises aluminum. 16. The flexible display device according to claim 1, further comprising a wiring and an electrode disposed on the flexible substrate, wherein at least one of the wiring and the electrode includes the conductive pattern . 17. The flexible display device according to claim 16, wherein the wiring includes at least one of a gate line, a data line, a connection line, and a fan-out line. 18. The flexible display device according to claim 1, further comprising: an insulating layer disposed on the flexible substrate; a first wiring provided between the flexible substrate and the insulating layer; and A second wiring is provided on the insulating layer, wherein at least one of the first wiring and the second wiring includes the conductive pattern. 19. The flexible display device according to claim 1, wherein the flexible display device is selected from mobile phones, televisions, computers, wearable display devices, rollable display devices, foldable display devices, automatic A vehicle display device and an ornament display device. 20. The flexible display device according to claim 1, wherein the flexible display device is configured to operate in a first mode or in a second mode, wherein in the first mode the flexible substrate and the At least a part of the conductive pattern is bent, and the flexible substrate and the at least part of the conductive pattern are stretched in the second mode. 21. The flexible display device according to claim 20, wherein the first mode comprises: a first bending mode in which the flexible substrate and the at least a portion of the conductive pattern are bent in one direction with respect to a bending axis; and A second bending mode in which the flexible substrate and the at least a portion of the conductive pattern are bent in a direction opposite to the one direction with respect to the bending axis. 22. A flexible display device, comprising: A flexible display panel, including a flexible substrate, an organic light-emitting element disposed on the flexible substrate, and a sealing layer disposed on the organic light-emitting element; and The touch sensing unit includes a touch bending part and is arranged on the sealing layer, wherein, The touch sensing unit includes a conductive pattern including a first conductive pattern layer and a second conductive pattern layer disposed on the first conductive pattern layer and included in the touch bending portion, The first conductive pattern layer has a first thickness and includes a first material, The second conductive pattern layer has a second thickness smaller than the first thickness and includes a second material different from the first material. 23. The flexible display device according to claim 22, wherein the touch sensing unit comprises: sensing electrodes; a pad portion electrically connected to the sensing electrode; connecting wires connected to the sensing electrodes; and A fan-out line is connected to the connection line and the pad portion, at least one of the sensing electrode, the pad portion, the connection line, and the fan-out line includes the conductive pattern. 24. The flexible display device according to claim 23, wherein the sensing electrodes have a grid shape. 25. A method of manufacturing a flexible display device, the method comprising: prepare the flexible substrate; and Disposing a conductive pattern on the flexible substrate, disposing the conductive pattern includes: supplying a first gas to form a first conductive pattern layer having a first thickness on the flexible substrate; and supplying a gas different from the first gas. the second gas to form a second conductive pattern layer having a second thickness smaller than the first thickness on the first conductive pattern layer. 26. The method according to claim 25, wherein forming the first conductive pattern layer is performed by sputtering at least one of a metal, an alloy of the metal, an oxide of the metal, and a transparent conductive oxide and at least one step of forming the second conductive pattern layer. 27. The method of claim 25, wherein disposing the conductive pattern further comprises supplying a third gas different from the second gas to form a third conductive pattern layer on the second conductive pattern layer, The third conductive pattern layer has a third thickness greater than the second thickness. 28. The method according to claim 27, wherein each of forming the first conductive pattern layer, forming the second conductive pattern layer, and forming the third conductive pattern layer is performed without plasma. steps. 29. The method according to claim 27, wherein the step of forming the first conductive pattern layer is performed by using aluminum gas, the step of forming the second conductive pattern layer is performed by using titanium gas, and the step of forming the second conductive pattern layer is performed by using aluminum gas. A step of forming the third conductive pattern layer. 30. The method of claim 29, wherein each of forming the first conductive pattern layer, forming the second conductive pattern layer, and forming the third conductive pattern layer is performed five times. 31. The method according to claim 27, wherein the step of forming the first conductive pattern layer is performed by using aluminum gas, the step of forming the second conductive pattern layer is performed by using oxygen gas, and the step of forming the second conductive pattern layer is performed by using aluminum gas. The step of the third conductive pattern layer. 32. A flexible conductive pattern comprising: a first conductive pattern layer disposed on the flexible substrate and comprising a first material having a first thickness; and A second conductive pattern layer is disposed on the first conductive pattern layer and includes a second material different from the first material, and the second material has a second thickness smaller than the first thickness. 33. The flexible conductive pattern according to claim 32, wherein the first thickness is equal to or greater than 100 angstroms and equal to or less than 1500 angstroms, and the second thickness is equal to or greater than 10 angstroms and equal to or less than 100 angstroms. 34. The flexible conductive pattern according to claim 32, the flexible conductive pattern further comprising a third conductive pattern layer, the third conductive pattern layer is disposed on the second conductive pattern layer and comprises a third material, the The third material has a third thickness greater than the second thickness. 35. The flexible conductive pattern according to claim 34, wherein each of the first thickness and the third thickness is equal to or greater than 100 angstroms and equal to or less than 1500 angstroms, and the second thickness is equal to or greater than 10 Angstroms and equal to or less than 100 Angstroms. 36. The flexible conductive pattern according to claim 32, wherein the first conductive pattern layer has a first grain size, the second conductive pattern layer has a second grain size, and the first conductive pattern layer The average grain size is larger than the average grain size of the second conductive pattern layer.