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CN107329319A - Quantum dot diaphragm and preparation method thereof, backlight module - Google Patents

Quantum dot diaphragm and preparation method thereof, backlight module Download PDF

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Publication number
CN107329319A
CN107329319A CN201710604041.5A CN201710604041A CN107329319A CN 107329319 A CN107329319 A CN 107329319A CN 201710604041 A CN201710604041 A CN 201710604041A CN 107329319 A CN107329319 A CN 107329319A
Authority
CN
China
Prior art keywords
quantum dot
layer
barrier layer
quantum
diaphragm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710604041.5A
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Chinese (zh)
Inventor
马卜
唐柳
程方亮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Xingshuo Nanotech Co Ltd
Original Assignee
Suzhou Xingshuo Nanotech Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Xingshuo Nanotech Co Ltd filed Critical Suzhou Xingshuo Nanotech Co Ltd
Priority to CN201710604041.5A priority Critical patent/CN107329319A/en
Publication of CN107329319A publication Critical patent/CN107329319A/en
Priority to CN201810766823.3A priority patent/CN109031777A/en
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/38—Layered products comprising a layer of synthetic resin comprising epoxy resins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/40—Layered products comprising a layer of synthetic resin comprising polyurethanes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2250/00—Layers arrangement
    • B32B2250/40—Symmetrical or sandwich layers, e.g. ABA, ABCBA, ABCCBA
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Laminated Bodies (AREA)
  • Luminescent Compositions (AREA)

Abstract

A kind of quantum dot diaphragm, including the first barrier layer set gradually, the first quantum dot layer, basalis, the second quantum dot layer, the second barrier layer, first quantum dot layer includes the green light quantum point being dispersed in polymeric material, second quantum dot layer includes the red light quantum point for being dispersed in polymeric material, first barrier layer is deposited on first quantum dot layer, and second barrier layer is deposited on second quantum dot layer.The quantum dot diaphragm excellent performance of the present invention, suitable industrialization.

Description

Quantum dot diaphragm and preparation method thereof, backlight module
Technical field
The present invention relates to display field, more particularly to a kind of quantum dot diaphragm for backlight display field.
Background technology
Quantum dot is that LCD backlight shows that product improves a kind of effective ways of colour gamut.Compared to common white light LEDs, make With quantum dot diaphragm collocation blue-ray LED, LCD colour gamut can be improved to more than 100%NTSC by original 70%NTSC, so that Show more preferable color saturation.
Existing quantum dot diaphragm is made up of two Obstruct membrane intermediate course quantum dot layers, and in sandwich structure, it makes work Skill mainly includes：Two Obstruct membranes are applied as by film with the macromolecule glue for being mixed with red-green glow quantum dot by coating process, and It is cured to form.The Obstruct membrane deposits inorganic coating on organic group bottom and constituted.
The content of the invention
It is an object of the invention to provide a kind of new quantum dot diaphragm, the quantum dot diaphragm cost of prior art is solved High, self-absorption is big and is difficult the problem of doing thin.
The invention provides a kind of quantum dot diaphragm, including set gradually the first barrier layer, the first quantum dot layer, substrate Layer, the second quantum dot layer, the second barrier layer, first quantum dot layer include the green glow amount being dispersed in polymeric material Sub-, second quantum dot layer includes the red light quantum point for being dispersed in polymeric material, the first barrier layer deposition On first quantum dot layer, second barrier layer is deposited on second quantum dot layer.
Preferably, the base layer thickness scope is 25 microns -100 microns, first quantum dot layer and described second Quantum dot layer thickness range is 20 microns -50 microns.
Preferably, the thickness range of first barrier layer and second barrier layer is 200 nanometers -2 microns.
Preferably, the basalis is the polyester film formed by polyethylene terephthalate.
Preferably, first barrier layer and second barrier layer include inorganic coating and protective coating.
Preferably, first barrier layer and second barrier layer include alternate organic layer and inorganic coating, and Protective coating.
Preferably, the inorganic coating is alumina layer or silicon oxide layer.
Preferably, the thickness of the quantum dot diaphragm is no more than 120 microns.
Preferably, the thickness of the quantum dot diaphragm is no more than 100 microns.
Preferably, the green light quantum point and red light quantum point include at least one of following material：Cadmium selenide, vulcanization Cadmium, cadmium telluride, zinc selenide, indium phosphide, indium arsenide, perovskite.
The invention also provides a kind of backlight module, the backlight module includes quantum dot diaphragm as described above.
The invention also provides a kind of preparation method of quantum dot diaphragm, comprise the following steps：Obtain green quantum dispensing Liquid and red light quantum point glue；Green light quantum point glue and red light quantum point glue are respectively coated in polyesters basalis Upper and lower surface, solidify to form the first quantum dot layer, polyesters basalis, the composite construction of the second quantum dot layer；Institute The upper and lower surface for stating composite construction deposits the first barrier layer and the second barrier layer respectively.
Preferably, the deposition is realized by magnetron sputtering, plasma chemical vapor deposition or atomic vapor deposition.
The new quantum dot diaphragm of the present invention, changes the quantum dot diaphragm structure design of prior art, simplifies technique, Effectively reduce cost, it is easier to obtain relatively thin quantum dot film, and avoid the self-absorption that red green quantum dot mixing causes and show As.
Brief description of the drawings
Fig. 1 is the structural representation of quantum dot diaphragm in the present invention.
Embodiment
Below in conjunction with embodiment of the present invention, the technical scheme in the embodiment of the present invention is described in detail, shown So, described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Based in the present invention Embodiment, the every other implementation that those of ordinary skill in the art are obtained on the premise of creative work is not made Mode, belongs to the scope of the present invention.
With reference to Fig. 1, the invention discloses a kind of new quantum dot diaphragm 100, including the first barrier layer set gradually 102nd, the first quantum dot layer 104, basalis 106, the second quantum dot layer 108, the second barrier layer 110.First quantum dot layer 104 is wrapped The green light quantum point 114 being dispersed in polymeric material 112 is included, the second quantum dot layer 108 includes being dispersed in polymerization Red light quantum point 116 in thing material 112.First barrier layer 102 is deposited on the first quantum dot layer 104, the second barrier layer 110 It is deposited on the second quantum dot layer 108.
First barrier layer 102 is identical with the structure of the second barrier layer 110.First barrier layer 102 includes being used to obstruct water oxygen Inorganic coating 118 and protective coating 120.Inorganic coating 118 is positioned adjacent to the side of the first quantum dot layer 104, protective coating 120 are arranged far from the side of the first quantum dot layer 104.Inorganic coating 118 refers to that the water oxygen being made up of inorganic material obstructs energy The strong barrier layer of power, inorganic material effectively stops aqueous vapor and the effect of oxygen by being reached in the dense arrangement of atomic level. One preferred embodiment in, inorganic coating 118 include aluminum oxide, aluminium nitride, aluminum oxynitride, titanium oxide, titanium nitride, nitrogen oxygen Change at least one of titanium, zirconium oxide, zirconium nitride, nitrogen oxidation zirconium, silica, carborundum, silicon oxynitride, graphene.At one In preferred embodiment, inorganic coating 118 is alumina layer or silicon oxide layer.The deposition process of inorganic coating 118 is preferred Including injection, sputtering, evaporation, vacuum moulding machine, plasma chemical vapor deposition or ald.In a preferred implementation In mode, inorganic coating 118 is formed by magnetron sputtering.The material of protective coating 120 is preferably acrylic resin, and thickness is 8- 12 microns.
Protective coating 120 includes poly- silicones, poly epoxy resin, polyurethane, makrolon, poly- fluororesin, poly- methyl-prop E pioic acid methyl ester, polyformaldehyde, polyethylene, Vingon, ethylene-vinyl alcohol copolymer, polyvinyl acetate, polytetrafluoroethylene (PTFE), Polyvinyl butyral, polypropylene, polyamide, polyethylene terephthalate, PEN or poly- to benzene Dioctyl phthalate butanediol ester, polyacrylate, polystyrene acrylonitrile resin, poly- Colombia's resin, poly- CR-39 resins, poly- OZ Series plastics, poly- TS-26 resins, poly- APO resins, poly- MR resins, poly- MH resins, poly- NAS resins, poly- ADC resins, poly- TOPAS At least one of resin, poly- ARTON resins.Preferably, 5%-10% diffusion particle, particle are added with protective coating 120 Particle diameter is 5-10 microns.Second barrier layer 110 is identical with the composition structure of the first barrier layer 102.
Basalis 106 is preferably polyester material, it is preferable that basalis 106 is by polyethylene terephthalate shape Into polyester film.Preferably, 5%-10% diffusion particle is added with basalis 106, particle diameter is 5-10 microns.Substrate Layer not only act as the effect for separate red green quantum dot layer, also make the first quantum dot layer, basalis, the second quantum dot layer formed answer Close the deposition that structure preferably adapts to inorganic barrier layer, it is to avoid cause quantum dot because quantum dot layer is softer, deposition stress is excessive Diaphragm is crimped and problem of Cracking.
In a preferred embodiment, the thickness of quantum dot diaphragm 100 is no more than 120 microns, and wherein basalis 106 is thick It is 25 microns -100 microns to spend scope, and the first quantum dot layer 104 and the thickness range of the second quantum dot layer 110 are 20 micron -50 Micron.Preferably, the thickness of quantum dot diaphragm 100 is no more than 100 microns.It is highly preferred that the thickness of quantum dot diaphragm 100 does not surpass Cross 80 microns.
Green light quantum point 114 and red light quantum point 116 comprising silicon class quantum dot, IIB-VIA compounds of group quantum dot, IIIA-VA compounds of group quantum dot, VA-VIA compounds of group quantum dot, the mixing of perovskite quantum dot and above-mentioned various quantum dots One kind in thing.IIB-VIA compounds of group quantum dot include from by CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe、CdSeS、CdSeTe、CdSTe、ZnSeS、ZnSeTe、ZnSTe、HgSeS、HgSeTe、HgSTe、CdZnS、CdZnSe、 CdZnTe、CdHgS、CdHgSe、CdHgTe、HgZnS、HgZnSe、HgZnTe、CdZnSeS、CdZnSeTe、CdZnSTe、 The one kind selected in the group of CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe composition.IIIA‐ VA compounds of group quantum dot include from by GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP, InAs, GaNP, GaNAs, GaPAs、AlNP、AlNAs、AlPAs、InNP、InNAs、InPAs、GaAlNP、GaAlNAs、GaAlPAs、GaInNP、 The one kind selected in the group of GaInNAs, GaInPAs, InAlNP, InAlNAs and InAlPAs composition.The side of being preferable to carry out In formula, quantum dot is core shell structure.In a preferred embodiment, green light quantum point and red light quantum point include following material At least one of：Cadmium selenide, cadmium sulfide, cadmium telluride, zinc selenide, indium phosphide, indium arsenide, perovskite.
The polymeric material 112 of scattered quantum dot preferably includes to be modified poly- silicones, modified polyurethane, modified poly-epoxy tree At least one of fat, modified polypropene acid resin.More there is choosing, it is good to oil-soluble quantum dot dissolubility that polymeric material is selected from And the strong poly- epoxy modified acrylic resin of water oxygen obstructing capacity.Preferably, also it is added with 5%-10%'s in polymeric material Diffusion particle, particle diameter is 5-10 microns.
Cause the inorganic defect of coating 118 for the irregularities that avoid luminescent layer, cause the water oxygen barrier of inorganic coating 118 Can be not enough, in one preferred embodiment, one layer of smooth finish (figure is provided between quantum dot layer and inorganic coating 118 Not shown in), the surface roughness of smooth finish is less than 100 nanometers.Smooth finish can by chemical vapour deposition technique, etc. from It is prepared by the methods such as daughter coating.
Backlight module, display device or light-emitting device can be prepared using the quantum dot diaphragm 100 of the present invention.Display dress Put including TV, mobile phone, wrist-watch etc..The quantum dot diaphragm 100 of the present invention is preferably used on mobile phone.In backlight module, quantum Point diaphragm arrangement is on LED light direction.
The invention also provides a kind of preparation method of quantum dot diaphragm 100, comprise the following steps：Obtain green light quantum point Glue and red light quantum point glue；Green light quantum point glue and red light quantum point glue are respectively coated in polyesters basalis Upper and lower surface, solidify to form the first quantum dot layer 104, polyesters basalis 106, second quantum dot layer 108 and answer Close structure；Smooth finish, inorganic coating, organic layer, inorganic coating, protection are sequentially depositing in the upper and lower surface of the composite construction Coating, forms the first barrier layer 102 and the second barrier layer 110.Preferably, deposition passes through magnetron sputtering, Both Plasma Chemical Vapor Deposition is realized.
In a detailed embodiment, the first barrier layer 102 is identical with the structure of the second barrier layer 110, the first barrier layer 102 include the inorganic coating 118 and protective coating 120 for obstructing water oxygen.Inorganic coating 118 is positioned adjacent to the first quantum dot The side of layer 104, protective coating 120 is arranged far from the side of the first quantum dot layer 104.Inorganic coating 118 refers to by inorganic The strong barrier layer of water oxygen obstructing capacity that material is constituted, inorganic material in the dense arrangement of atomic level by reaching effective stop The effect of aqueous vapor and oxygen.In one preferred embodiment, inorganic coating 118 includes aluminum oxide, aluminium nitride, nitrogen oxidation Aluminium, titanium oxide, titanium nitride, titanium oxynitrides, zirconium oxide, zirconium nitride, nitrogen oxidation zirconium, silica, carborundum, silicon oxynitride, graphite At least one of alkene.In one preferred embodiment, inorganic coating 118 is alumina layer or silicon oxide layer.
Although inventor has done more detailed elaboration and enumerated to technical scheme, it will be appreciated that for For those skilled in the art, above-described embodiment is modified and/or the flexible or equivalent alternative solution of use is obvious , can not all depart from the essence of spirit of the present invention, the term occurred in the present invention be used for elaboration to technical solution of the present invention and Understand, can not be construed as limiting the invention.

Claims (12)

1. a kind of quantum dot diaphragm, it is characterised in that including the first barrier layer set gradually, the first quantum dot layer, basalis, Second quantum dot layer, the second barrier layer, first quantum dot layer include the green quantum being dispersed in polymeric material Point, second quantum dot layer includes the red light quantum point for being dispersed in polymeric material, and first barrier layer is deposited on On first quantum dot layer, second barrier layer is deposited on second quantum dot layer.
2. quantum dot diaphragm according to claim 1, it is characterised in that the base layer thickness scope is 25 micron -100 Micron, first quantum dot layer and the second quantum dot layer thickness range are 20 microns -50 microns.
3. quantum dot diaphragm according to claim 1 or 2, it is characterised in that first barrier layer and second resistance The thickness range of interlayer is 200 nanometers -2 microns.
4. quantum dot diaphragm according to claim 1, it is characterised in that the basalis is by poly terephthalic acid second two The polyester film of alcohol ester formation.
5. quantum dot diaphragm according to claim 1, it is characterised in that first barrier layer and second barrier layer Include inorganic coating and protective coating.
6. quantum dot diaphragm according to claim 5, it is characterised in that first barrier layer and second barrier layer Including alternate organic layer and inorganic coating, and protective coating.
7. the quantum dot diaphragm according to claim 5 or 6, it is characterised in that the inorganic coating be alumina layer or Silicon oxide layer.
8. quantum dot diaphragm according to claim 1, it is characterised in that the thickness of the quantum dot diaphragm is no more than 120 Micron.
9. quantum dot diaphragm according to claim 1, it is characterised in that the green light quantum point and red light quantum point include At least one of following material：Cadmium selenide, cadmium sulfide, cadmium telluride, zinc selenide, indium phosphide, indium arsenide, perovskite.
10. a kind of backlight module, it is characterised in that the backlight module includes any described quantum dot in claim 1-9 Diaphragm.
11. a kind of preparation method of quantum dot diaphragm, it is characterised in that comprise the following steps：Obtain green light quantum point glue and Red light quantum point glue；Green light quantum point glue and red light quantum point glue are respectively coated in the upper table in polyesters basalis Face and lower surface, solidify to form the first quantum dot layer, polyesters basalis, the composite construction of the second quantum dot layer；Described multiple The upper and lower surface for closing structure deposits the first barrier layer and the second barrier layer respectively.
12. preparation method according to claim 1, it is characterised in that the deposition passes through magnetron sputtering, plasma chemical Vapour deposition or atomic vapor deposition are realized.
CN201710604041.5A 2017-07-21 2017-07-21 Quantum dot diaphragm and preparation method thereof, backlight module Pending CN107329319A (en)

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CN201810766823.3A CN109031777A (en) 2017-07-21 2018-07-13 Quantum dot diaphragm and preparation method thereof and backlight module

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