CN107304037A - A kind of MEMS and preparation method thereof, electronic installation - Google Patents
A kind of MEMS and preparation method thereof, electronic installation Download PDFInfo
- Publication number
- CN107304037A CN107304037A CN201610240785.9A CN201610240785A CN107304037A CN 107304037 A CN107304037 A CN 107304037A CN 201610240785 A CN201610240785 A CN 201610240785A CN 107304037 A CN107304037 A CN 107304037A
- Authority
- CN
- China
- Prior art keywords
- top wafer
- metal layer
- layer
- bottom wafers
- mems
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00095—Interconnects
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Micromachines (AREA)
Abstract
The present invention relates to a kind of MEMS and preparation method thereof, electronic installation.Methods described includes step S1：Top wafer is provided, the first layer of bonding material is formed with the top wafer, first layer of bonding material includes the first metal layer；Step S2：Bottom wafers are provided, the second layer of bonding material is formed with the bottom wafers, second layer of bonding material includes the first metal layer and the second metal layer sequentially formed；Step S3：The top wafer and the bottom wafers are aligned, step S4：Below the fusing point that the top wafer and the bottom wafers are heated to the first metal layer and the alloy of second metal layer formation；Step S5：The second metal layer in second layer of bonding material is contacted with the first metal layer in first layer of bonding material, and only continue to heat more than the top wafer to the fusing point of the alloy, so that the top wafer and bottom wafers engagement.
Description
Technical field
The present invention relates to semiconductor applications, in particular it relates to a kind of MEMS and its system
Preparation Method, electronic installation.
Background technology
With continuing to develop for semiconductor technology, in the city of sensor (motion sensor) class product
On field, smart mobile phone, integrated CMOS and MEMS (MEMS) device are increasingly becoming most main
Stream, state-of-the-art technology, and with the renewal of technology, the development side of this kind of transmission sensors product
To being the smaller size of scale, high-quality electric property and lower loss.
Wherein, microelectromechanical systems (MEMS) is in volume, power consumption, weight and in price
With fairly obvious advantage, a variety of different sensors, such as pressure sensing have been developed so far
Device, acceleration transducer, inertial sensor and other sensors.
In MEMS fields, the cavity structure in MEMS sensor uses bonding pattern
(Bonding) formed, a kind of widely used bonding method is Al-Ge alloy bondings (Eutectic
bonding)。
In order to while Al/Ge-Al bonds together to form cavity, form bonded portion low-resistance
It is electrically connected with, it is desirable to which a kind of metal all runs out of during alloy bonding, a kind of conventional metal
Collocation mode is AlGe-Al structures.
But it is due to Al extension presence, may result in Ge consumption incomplete；It can also cause simultaneously
The alloying metal bonded together to form is overflowed, and even shorted devices can be caused when serious.
Therefore need to be improved further the preparation method of current MEMS, on eliminating
State various drawbacks.
The content of the invention
A series of concept of reduced forms is introduced in Summary, this will be in specific embodiment party
It is further described in formula part.The Summary of the present invention is not meant to attempt to limit
Go out the key feature and essential features of technical scheme claimed, do not mean that more and attempt really
The protection domain of fixed technical scheme claimed.
The present invention in order to overcome the problem of presently, there are there is provided a kind of preparation method of MEMS,
Including：
Step S1：Top wafer is provided, the first layer of bonding material, institute are formed with the top wafer
Stating the first layer of bonding material includes the first metal layer；
Step S2：Bottom wafers are provided, the second layer of bonding material, institute are formed with the bottom wafers
State the first metal layer and second metal layer that the second layer of bonding material includes sequentially forming；
Step S3：The top wafer and the bottom wafers are aligned, so that second grafting material
The second metal layer in layer is directed at the first metal layer in first layer of bonding material；
Step S4：The top wafer and the bottom wafers are heated to the first metal layer and described
Below the fusing point of the alloy of second metal layer formation；
Step S5：The second metal layer in second layer of bonding material is engaged into material with described first
The first metal layer contact in the bed of material, and only continue to heat the top wafer to the alloy
More than fusing point, so that the top wafer and bottom wafers engagement.
Alternatively, in the step S5, while the heating top wafer on the top wafer
Apply bonding force, so that the top wafer and bottom wafers bonding.
Alternatively, the bonding force is 8-12kN.
Alternatively, respectively further comprised in the step S1 and the step S2 to the top wafer and
The step of bottom wafers are cleaned.
Alternatively, still further comprised in the step S3 and take out the bonding chamber for the bonding very
Empty step.
Alternatively, in the step S5, continue to heat the top wafer to the alloy fusing point with
On, the bottom wafers temperature remains unchanged.
Alternatively, the first metal layer selects Al；
The second metal layer selects Ge.
Alternatively, the top wafer and the bottom wafers are heated to 420 DEG C in the step S4
Or it is following；
Continue to heat the top wafer in the step S5 to 430 DEG C or more.
Present invention also offers a kind of MEMS prepared such as above-mentioned method.
Present invention also offers a kind of electronic installation, including above-mentioned MEMS.
Current AlGe-Al bonding technologies, easily cause alloying metal spilling, cause shorted devices.
In order to solve the problem, the present invention proposes a kind of new bonding technology method, and the present invention changes biography
The heat treatment mode of para-linkage metal in bonding technology of uniting, by the temperature that set key synthetic is justified respectively,
Using heat transfer, make in the dynamic equilibrium that bonded interface reacts in alloy all the time, it is therefore prevented that be bonded
Invalid Al-Ge mutually melts process in journey, so as to reduce metal alloy spilling, expands process window,
Improve product yield.
The present invention has advantages below：
(1) the excessive of bonding material ring in MEMS can be prevented.
(2) performance of MEMS can be improved.
Brief description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.In accompanying drawing
Embodiments of the invention and its description are shown, for explaining the device and principle of the present invention.In accompanying drawing
In,
Fig. 1 is the preparation process schematic diagram of MEMS described in the embodiment of the invention；
Fig. 2 is the preparation process schematic diagram of MEMS described in the embodiment of the invention；
Fig. 3 is the preparation technology flow of MEMS described in the embodiment of the invention
Figure.
Embodiment
In the following description, a large amount of concrete details are given to provide to the present invention more thoroughly
Understand.It is, however, obvious to a person skilled in the art that the present invention can be without one
Or these multiple details and be carried out.In other examples, in order to avoid obscuring with the present invention,
It is not described for some technical characteristics well known in the art.
It should be appreciated that the present invention can be implemented in different forms, and it should not be construed as being limited to this
In the embodiment that proposes.On the contrary, providing these embodiments disclosure will be made thoroughly and complete, and will be originally
The scope of invention fully passes to those skilled in the art.In the accompanying drawings, for clarity, Ceng He areas
Size and relative size may be exaggerated.Same reference numerals represent identical element from beginning to end.
It should be understood that be referred to as when element or layer " ... on ", " with ... it is adjacent ", " being connected to " or " coupling
Close " other elements or layer when, its can directly on other elements or layer, it is adjacent thereto, connection
Or other elements or layer are coupled to, or there may be element or layer between two parties.On the contrary, when element is claimed
For " on directly existing ... ", " with ... direct neighbor ", " being directly connected to " or " being directly coupled to " other members
When part or layer, then in the absence of element or layer between two parties.Although it should be understood that term first, the can be used
2nd, the third various elements of description, part, area, floor and/or part, these elements, part, area,
Layer and/or part should not be limited by these terms.These terms be used merely to distinguish element, part,
Area, floor or part and another element, part, area, floor or part.Therefore, the present invention is not being departed from
Under teaching, the first element discussed below, part, area, floor or part be represented by the second element,
Part, area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... under ",
" ... on ", " above " etc., it can for convenience describe and be used so as in description figure herein
A shown element or feature and other elements or the relation of feature.It should be understood that except shown in figure
Orientation beyond, spatial relationship term be intended to also including the use of the different orientation with the device in operation.Example
Such as, if device upset in accompanying drawing, then, it is described as " below other elements " or " its it
Under " or " under it " element or feature will be oriented to other elements or feature " on ".Therefore, example
Property term " ... below " and " ... under " may include it is upper and lower two orientation.Device can additionally take
Correspondingly explained to (being rotated by 90 ° or other orientations) and spatial description language as used herein.
The purpose of term as used herein is only that description specific embodiment and not as the limit of the present invention
System.Herein in use, " one " of singulative, " one " and " described/should " be also intended to include plural number
Form, unless context is expressly noted that other mode.It is also to be understood that term " composition " and/or " comprising ",
When in this specification in use, determining the feature, integer, step, operation, element and/or part
Presence, but be not excluded for one or more other features, integer, step, operation, element, part
And/or the presence or addition of group.Herein in use, term "and/or" includes any of related Listed Items
And all combinations.
In order to thoroughly understand the present invention, detailed step and detailed knot will be proposed in following description
Structure, to explain technical scheme.Presently preferred embodiments of the present invention is described in detail as follows, but
In addition to these detailed descriptions, the present invention can also have other embodiment.
Embodiment one
In order to solve problems of the prior art, the invention provides a kind of preparation of MEMS
Method, below in conjunction with the accompanying drawings 1-3 methods described is described further, wherein, Fig. 1 for the present invention
Schematic diagram when MEMS described in one embodiment is aligned；Fig. 2 is specific for the present invention one
Schematic diagram when MEMS described in embodiment is bonded；Fig. 3 is the embodiment of the invention
Described in MEMS preparation technology flow chart.
First, step 101 is performed there is provided top wafer 201, is formed with the top wafer 201
First layer of bonding material, first layer of bonding material includes the first metal layer 202.
Specifically, as shown in figure 1, could be formed with CMOS in the top wafer 201 in this step
Device and various MEMS elements, wherein the MEMS element refers in the MMES sensors
Necessary various components, by taking motion sensor as an example, coating is could be formed with the top wafer,
To form cavity after being engaged with bottom wafers.
Secondly, the first metal layer 202 is formed with the top wafer 201, to form described first
Layer of bonding material.
Wherein, the metal material that the first metal layer 202 can be commonly used from ability, such as metallic copper, aluminium
Or tungsten etc., it is not limited to it is a certain.
Alternatively, the first metal layer 202 selects Al in this application.
Then the top wafer 201 is cleaned, to improve the Joint Properties of the top wafer 201.
Specifically, in this step with the hydrofluoric acid DHF of dilution (wherein comprising HF, H2O2And H2O)
Prerinse is carried out to the surface of the top wafer 201, so that the bottom wafers 301 have well
Performance (lead good mechanism).
Wherein, the concentration of the DHF is not limited strictly, in the present invention preferably
HF:H2O2:H2O=0.1-1.5:1:5.
In addition, after cleaning step has been performed, methods described is still further comprised the bottom wafers
301 processing being dried.
Preferably, the top wafer 201 is dried from isopropanol (IPA).
Step 102 is performed there is provided bottom wafers 204, second is formed with the bottom wafers 204
Layer of bonding material, second layer of bonding material includes the gold medal of the first metal layer 202 and second sequentially formed
Belong to layer 203.
Specifically, as shown in figure 1, could be formed with CMOS in the bottom wafers 204 in this step
Device and various MEMS elements, wherein the MEMS element refers in the MMES sensors
Necessary various components, by taking motion sensor as an example, provide MEMS substrate, the MEMS first
Cmos device can also be further formed below substrate, the cmos device passes through metal interconnection structure
It is connected with the MEMS substrate, the example is not limited to certainly, be will not be repeated here.
Also there is groove, to form MEMS after being engaged with top wafer in wherein described bottom wafers
Cavity.
Secondly, the first metal layer 202 and second metal layer are sequentially formed in the bottom wafers 204
203, to form second layer of bonding material in the bottom wafers 204.
Wherein, the first metal layer 202 and second metal layer 203 select different metal materials, the first gold medal
Belong to the metal material that layer 202 and second metal layer 203 can be commonly used from ability, such as metallic copper, aluminium
Or tungsten etc., it is not limited to it is a certain.
Alternatively, the first metal layer 202 selects Al in this application；The second metal layer 203
From Ge.
Then the bottom wafers 204 are cleaned, to improve the Joint Properties of the bottom wafers 204.
Specifically, in this step with the hydrofluoric acid DHF of dilution (wherein comprising HF, H2O2And H2O)
Prerinse is carried out to the surface of the bottom wafers 204, so that the bottom wafers 301 have well
Performance (lead good mechanism).
Wherein, the concentration of the DHF is not limited strictly, in the present invention preferably
HF:H2O2:H2O=0.1-1.5:1:5.
In addition, after cleaning step has been performed, methods described is still further comprised the bottom wafers
301 processing being dried.
Preferably, the bottom wafers 204 are dried from isopropanol (IPA).
Step 103 is performed, the top wafer 201 and the bottom wafers 204 are aligned, so that institute
State the institute that the second metal layer 203 in the second layer of bonding material is aligned in first layer of bonding material
State the first metal layer 202.
The second metal layer 203 in second layer of bonding material is directed at described in this step
The first metal layer 202 in one layer of bonding material, in this process in second layer of bonding material
The second metal layer 203 be only directed at the first metal layer 202 in first layer of bonding material
Do not contact directly, also will not apply bonding force on the top wafer.
Alternatively, the step of vacuumizing bonding chamber is still further comprised in this step.
Step 104 is performed, the top wafer 201 and the bottom wafers 204 are heated to described the
Below the fusing point of one metal level and the alloy of second metal layer formation.
Before bonding starts, two pieces of wafers (the top wafer 201 and the bottom wafers 204) are only
It is heated to be less than alloy temperature, to keep AlGe alloys not react.
Specifically, in this step when the first metal layer 202 selects Al；The second metal layer 203
During from Ge, the top wafer and the bottom wafers are heated to 420 DEG C or less in this step,
To prevent from reaching the fusing point of alloy.
Perform step 105, by the second metal layer 203 in second layer of bonding material with it is described
The first metal layer 202 in first layer of bonding material is contacted, and only continues to heat the top wafer
To more than the fusing point of the alloy, so that the top wafer 201 and the bottom wafers 204 are bonded.
Specifically, as shown in Fig. 2 continuing to heat the top wafer in this step to the alloy
More than fusing point, the bottom wafers temperature remains unchanged.
Apply bonding force on the top wafer while heating in the step, so that the top
Wafer and bottom wafers bonding.
Alternatively, the bonding force is 8-12kN.
Wherein, the top wafer (Al wafers) and bottom wafers (Al-Ge wafers) in this step
Temperature should be according to Al and AlGe volume parts, contact area etc. is calculated, to meet in heat biography
During leading, contact interface temperature is equal to or higher than alloy molten point temperature.
Specifically, in this step when the first metal layer 202 selects Al；The second metal layer 203
During from Ge, continue to heat the top wafer in this step to 430 DEG C or more, and the bottom
Wafer it is temperature-resistant.By heat transfer, a dynamic conjunction is formed in bonding (bonding) interface
Golden formation zone, realizes the combination of top wafer and bottom wafers.
After the top wafer and bottom wafers contact, only Al is heated, and AlGe wafers are maintained at conjunction
Below golden temperature.So, by heat transfer, a dynamic alloy generation area is formed at joint interface
Domain.Because the temperature of upper bottom crown can be controlled accurately, thus alloy formation range can be confined to key
Region is closed, so as to reach the effect that alloying metal spilling is reduced or avoided.
Wherein, during 424 DEG C of alloy temperatures, Al-Ge consumption, into following relationship.
The temperature of top wafer (Al wafer) and bottom wafers (Al-Ge wafer) should be according to Al and AlGe
Volume parts, contact area etc. is calculated, to meet in heat transfer process, contact interface temperature
Equal to or higher than alloy molten point temperature.
In this step by the temperature that set key synthetic is justified respectively, using heat transfer, make bonded interface
All the time in the dynamic equilibrium reacted in alloy, it is therefore prevented that invalid Al-Ge mutually melted in bonding process
Journey, so as to reduce metal alloy spilling, expands process window, improves product yield.
So far, the introduction of the correlation step of the MEMS preparation of the embodiment of the present invention is completed.Upper
State after step, other correlation steps can also be included, here is omitted.Also, except above-mentioned step
Outside rapid, the preparation method of the present embodiment can also be among each above-mentioned step or between different step
Including other steps, these steps can be realized by various techniques of the prior art, herein not
Repeat again.
Current AlGe-Al bonding technologies, easily cause alloying metal spilling, cause shorted devices.
In order to solve the problem, the present invention proposes a kind of new bonding technology method, and the present invention changes biography
The heat treatment mode of para-linkage metal in bonding technology of uniting, by the temperature that set key synthetic is justified respectively,
Using heat transfer, make in the dynamic equilibrium that bonded interface reacts in alloy all the time, it is therefore prevented that be bonded
Invalid Al-Ge mutually melts process in journey, so as to reduce metal alloy spilling, expands process window,
Improve product yield.
The present invention has advantages below：
(1) the excessive of bonding material ring in MEMS can be prevented.
(2) performance of MEMS can be improved.
Fig. 3 is the preparation technology flow chart of MEMS described in the embodiment of the invention,
Specifically include following steps：
Step S1：Top wafer is provided, the first layer of bonding material, institute are formed with the top wafer
Stating the first layer of bonding material includes the first metal layer；
Step S2：Bottom wafers are provided, the second layer of bonding material, institute are formed with the bottom wafers
State the first metal layer and second metal layer that the second layer of bonding material includes sequentially forming；
Step S3：The top wafer and the bottom wafers are aligned, so that second grafting material
The second metal layer in layer is directed at the first metal layer in first layer of bonding material；
Step S4：The top wafer and the bottom wafers are heated to the first metal layer and described
Below the fusing point of the alloy of second metal layer formation；
Step S5：The second metal layer in second layer of bonding material is engaged into material with described first
The first metal layer contact in the bed of material, and only continue to heat the top wafer to the alloy
More than fusing point, so that the top wafer and bottom wafers engagement.
Embodiment two
Present invention also offers a kind of MEMS, the MEMS passes through in embodiment 1
Methods described is prepared, and the device includes：
Bottom wafers 204；
Top wafer 201；
First layer of bonding material, on the top wafer 201, including a metal level 202；
Second layer of bonding material, in the bottom wafers 204, including the first metal sequentially formed
Layer 202 and second metal layer 203；
Cmos device is formed with the front of the bottom wafers, the cmos device includes various
Active device and/or passive device, the species of the cmos device are not limited to a certain kind.
Alternatively, the cmos device is located at the lower section of the MEMS element, described having performed
After CMOS technology MEMS technology is performed in the top of the cmos device.
Wherein, the MEMS element includes groove, for forming cavity in subsequent steps.
Wherein, the metal material that the first metal layer 202 can be commonly used from ability, such as metallic copper, aluminium
Or tungsten etc., it is not limited to it is a certain.
Alternatively, the first metal layer 202 selects Al in this application, and second metal layer 203 is selected
Ge。
The bottom wafers and the top wafer are combined into one, wherein by respectively in engaging process
The temperature of set key synthetic circle, using heat transfer, the dynamic for making bonded interface be reacted all the time in alloy
In balance, it is therefore prevented that invalid Al-Ge mutually melts process in bonding process, so as to reduce metal alloy
Overflow, expand process window, improve product yield.
The top wafer and the bottom wafers are heated to 420 DEG C or less in the registered, to prevent
Reach the fusing point of alloy.
Then the second metal layer 203 in second layer of bonding material is engaged into material with described first
The first metal layer 202 in the bed of material is contacted, and only continues to heat the top wafer to the alloy
Fusing point more than so that the top wafer 201 and the bottom wafers 204 are bonded.
Continue to heat more than the top wafer to the fusing point of the alloy in this step, the bottom is brilliant
Circle temperature remains unchanged.
Continue to heat the top wafer in this step to 430 DEG C or more, and the bottom wafers
It is temperature-resistant.By heat transfer, a dynamic alloy formation zone is formed at bonded interface, is realized
The combination of top wafer and bottom wafers.
The device of the present invention has advantages below：
(1) the excessive of bonding material ring in MEMS can be prevented.
(2) performance of MEMS can be improved.
Embodiment three
Present invention also offers a kind of electronic installation, including the MEMS described in embodiment two.Wherein,
Semiconductor devices is the MEMS described in embodiment two, or the preparation method according to embodiment one
Obtained MEMS.
The electronic installation of the present embodiment, can be mobile phone, tablet personal computer, notebook computer, net book,
Game machine, television set, VCD, DVD, navigator, camera, video camera, recording pen, MP3,
Any electronic product such as MP4, PSP or equipment, or any include the centre of the MEMS
Product.The electronic installation of the embodiment of the present invention, the above-mentioned MEMS due to having used, thus have
Better performance.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment
The purpose illustrated and illustrated is only intended to, and is not intended to limit the invention to described scope of embodiments
It is interior.In addition it will be appreciated by persons skilled in the art that the invention is not limited in above-described embodiment, root
More kinds of variants and modifications can also be made according to the teachings of the present invention, these variants and modifications all fall within this
Invent within scope claimed.Protection scope of the present invention is by the appended claims and its waits
Effect scope is defined.
Claims (10)
1. a kind of preparation method of MEMS, including：
Step S1：Top wafer is provided, the first layer of bonding material, institute are formed with the top wafer
Stating the first layer of bonding material includes the first metal layer；
Step S2：Bottom wafers are provided, the second layer of bonding material, institute are formed with the bottom wafers
State the first metal layer and second metal layer that the second layer of bonding material includes sequentially forming；
Step S3：The top wafer and the bottom wafers are aligned, so that second grafting material
The second metal layer in layer is directed at the first metal layer in first layer of bonding material；
Step S4：The top wafer and the bottom wafers are heated to the first metal layer and described
Below the fusing point of the alloy of second metal layer formation；
Step S5：The second metal layer in second layer of bonding material is engaged into material with described first
The first metal layer contact in the bed of material, and only continue to heat the top wafer to the alloy
More than fusing point, so that the top wafer and bottom wafers engagement.
2. according to the method described in claim 1, it is characterised in that in the step S5, heat
Apply bonding force on the top wafer while top wafer, so that the top wafer and institute
State bottom wafers bonding.
3. method according to claim 2, it is characterised in that the bonding force is 8-12kN.
4. according to the method described in claim 1, it is characterised in that in the step S1 and the step
The step of being cleaned to the top wafer and the bottom wafers is respectively further comprised in rapid S2.
5. according to the method described in claim 1, it is characterised in that also enter one in the step S3
The step of step includes vacuumizing the bonding chamber for the bonding.
6. according to the method described in claim 1, it is characterised in that in the step S5, continue
Heat more than the top wafer to the fusing point of the alloy, the bottom wafers temperature remains unchanged.
7. according to the method described in claim 1, it is characterised in that the first metal layer selects Al；
The second metal layer selects Ge.
8. method according to claim 7, it is characterised in that will be described in the step S4
Top wafer and the bottom wafers are heated to 420 DEG C or less；
Continue to heat the top wafer in the step S5 to 430 DEG C or more.
9. a kind of MEMS prepared such as one of claim 1 to 8 methods described.
10. a kind of electronic installation, including the MEMS described in claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610240785.9A CN107304037B (en) | 2016-04-18 | 2016-04-18 | A kind of MEMS device and preparation method thereof, electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610240785.9A CN107304037B (en) | 2016-04-18 | 2016-04-18 | A kind of MEMS device and preparation method thereof, electronic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107304037A true CN107304037A (en) | 2017-10-31 |
| CN107304037B CN107304037B (en) | 2019-06-28 |
Family
ID=60152083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610240785.9A Active CN107304037B (en) | 2016-04-18 | 2016-04-18 | A kind of MEMS device and preparation method thereof, electronic device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107304037B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120074417A1 (en) * | 2010-09-29 | 2012-03-29 | Analog Devices, Inc. | Method of Bonding Wafers |
| US20130203199A1 (en) * | 2012-02-02 | 2013-08-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of Bonding Caps for MEMS Devices |
| CN104891429A (en) * | 2015-04-17 | 2015-09-09 | 上海华虹宏力半导体制造有限公司 | Method for improving aluminum-germanium eutectic bonding process |
| CN104973564A (en) * | 2014-02-17 | 2015-10-14 | 罗伯特·博世有限公司 | Method for eutectic bonding of two carrier devices |
| CN105480936A (en) * | 2014-09-17 | 2016-04-13 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device, manufacturing method thereof and electronic device |
-
2016
- 2016-04-18 CN CN201610240785.9A patent/CN107304037B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120074417A1 (en) * | 2010-09-29 | 2012-03-29 | Analog Devices, Inc. | Method of Bonding Wafers |
| US20130203199A1 (en) * | 2012-02-02 | 2013-08-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of Bonding Caps for MEMS Devices |
| CN104973564A (en) * | 2014-02-17 | 2015-10-14 | 罗伯特·博世有限公司 | Method for eutectic bonding of two carrier devices |
| CN105480936A (en) * | 2014-09-17 | 2016-04-13 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device, manufacturing method thereof and electronic device |
| CN104891429A (en) * | 2015-04-17 | 2015-09-09 | 上海华虹宏力半导体制造有限公司 | Method for improving aluminum-germanium eutectic bonding process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107304037B (en) | 2019-06-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101403110B1 (en) | Three dimensional integrated circuit structures and hybrid bonding methods for semiconductor wafers | |
| TWI486303B (en) | Composite composed of at least two semiconductor substrates and method for producing the same (2) | |
| TWI471259B (en) | Mems device and manufacturing method thereof | |
| Fischer et al. | Unconventional applications of wire bonding create opportunities for microsystem integration | |
| TWI552279B (en) | Device, system and platform for hermetic sealing of sensor wafers | |
| US8866273B2 (en) | Lead frame and semiconductor package structure thereof | |
| US20150232329A1 (en) | Method for eutectic bonding of two carrier devices | |
| KR101679736B1 (en) | Sensor packaging and manufacturing method for the same | |
| CN107993928A (en) | A kind of method for suppressing the hybrid bonded middle copper electromigration of wafer | |
| CN105480936B (en) | Semiconductor device, manufacturing method thereof and electronic device | |
| CN107304038B (en) | A kind of MEMS device and preparation method thereof, electronic device | |
| CN105448748A (en) | Semiconductor device and preparation method thereof and electronic device | |
| Fan et al. | Wafer-level hermetic packaging of 3D microsystems with low-temperature Cu-to-Cu thermo-compression bonding and its reliability | |
| JP2003309245A (en) | Electric device and method for manufacturing the same | |
| CN105590937B (en) | A kind of back side illumination image sensor and preparation method thereof, electronic device | |
| CN107304037A (en) | A kind of MEMS and preparation method thereof, electronic installation | |
| CN105990222B (en) | Manufacturing method of semiconductor device, semiconductor devices and electronic device | |
| US20250079371A1 (en) | Semiconductor die assemblies with flexible interconnects and associated methods and systems | |
| CN106032264B (en) | A kind of CMEMS devices and preparation method thereof, electronic installation | |
| CN106185787B (en) | A kind of MEMS device and preparation method thereof, electronic device | |
| CN105470153B (en) | Wafer bonding method | |
| CN108074823A (en) | A kind of semiconductor devices and preparation method thereof and electronic device | |
| CN106586946A (en) | MEMS (microelectromechanical system) device, preparation method thereof and electronic device | |
| TWI684565B (en) | Semiconductor sensor and method of manufacturing the same | |
| CN105984835B (en) | A kind of MEMS and preparation method thereof and electronic installation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |