CN107170697B

CN107170697B - Substrate annealing device

Info

Publication number: CN107170697B
Application number: CN201710286624.8A
Authority: CN
Inventors: 杨依辉
Original assignee: Kunshan Guoxian Photoelectric Co Ltd
Current assignee: Kunshan Guoxian Photoelectric Co Ltd
Priority date: 2017-04-27
Filing date: 2017-04-27
Publication date: 2019-12-24
Anticipated expiration: 2037-04-27
Also published as: CN107170697A

Abstract

An apparatus for annealing a substrate, comprising: the annealing chamber is internally provided with a laser annealing device for annealing the surface of the substrate; the annealing chamber is internally provided with a plurality of irradiation positions for fixing the substrate, and the at least one laser annealing device irradiates the substrate at the irradiation positions. The laser annealing device saves occupied space and improves the conveying and processing quantity of the substrates in the same space; meanwhile, the conveying chamber, the preheating chamber and the annealing chamber can be provided with a plurality of chambers, so that high-efficiency annealing can be realized, and the laser annealing capacity can be improved.

Description

Substrate annealing device

Technical Field

The invention relates to the technical field of display, in particular to a substrate annealing device.

Background

With the development of display technology, an Active-matrix organic light emitting diode (AMOLED) panel is widely used, and the OLED has the advantages of high contrast, wide viewing angle, low power consumption, small volume, and the like. Based on the AMOLED panel, a technology called Low Temperature Poly-Silicon (LTPS) has been developed. At present, LTPS technology uses chemical vapor deposition to deposit a buffer layer on a glass substrate; then, an amorphous silicon layer is deposited on the buffer layer, and the amorphous silicon layer is converted into a polycrystalline silicon layer through a laser annealing device.

In the prior art, an amorphous silicon layer on a substrate is uniformly irradiated with excimer laser light, so that the amorphous silicon layer is melted at a high temperature and then recrystallized to form a polycrystalline silicon layer. However, due to the laser annealing equipment in the prior art, only one substrate can be annealed at a time in the annealing process, so that the productivity is low in efficiency, and the industrial processing of the substrate is not facilitated.

Disclosure of Invention

Therefore, the technical problem to be solved by the invention is to overcome the defects of low processing efficiency and high cost of the laser annealing process in the prior art, and therefore, the invention provides the laser annealing device for the amorphous silicon thin film.

Therefore, the technical scheme of the invention is as follows:

an apparatus for annealing a substrate, comprising: the annealing chamber is internally provided with a laser annealing device for annealing the surface of the substrate; the annealing chamber is internally provided with a plurality of irradiation positions for fixing the substrate, and the at least one laser annealing device irradiates the substrate at the irradiation positions.

According to the substrate annealing device, the plurality of irradiation positions are arranged in the annealing chamber, so that the synchronous annealing of a plurality of substrates in the annealing chamber can be realized under the irradiation of the laser annealing device, and the productivity is effectively improved.

Further, the laser annealing device is provided with a plurality of laser annealing devices, and the laser annealing devices are respectively arranged on the chamber walls corresponding to the irradiation positions. Because the laser annealing devices are multiple, each laser annealing device can be controlled and maintained, and operation by a user is facilitated.

Further, a preheating chamber disposed upstream of the annealing chamber, the preheating chamber preheating the substrate; preferably, the heating temperature of the preheating chamber ranges from 0 ℃ to 600 ℃.

According to the substrate annealing device, the preheating chamber is arranged at the upstream of the annealing chamber, so that the situation that amorphous silicon can be converted into polycrystalline silicon only by carrying out multiple times of laser scanning due to low substrate temperature is avoided; the laser annealing efficiency is improved, the use times of the laser emitting unit are reduced, the service life of the laser light source is prolonged, and the production cost is reduced.

Further, a rotating device is arranged in the annealing chamber, and a plurality of irradiation positions are arranged on the rotating device; preferably, a turning device is further disposed on the rotating device, and the turning device turns the substrate.

The substrate annealing device provided by the invention can realize that each substrate is conveyed into or taken away from each irradiation position corresponding to the laser annealing device through rotation by the rotation device.

Further, the substrate annealing apparatus further comprises a transfer chamber that transfers the incoming substrate to the preheating chamber; preferably, a turnover device is arranged in the transfer chamber, and the turnover device turns over the substrate; preferably, the preheating chamber, the transfer chamber and the annealing chamber are each provided with a plurality of chambers.

According to the substrate annealing device, the turnover device is arranged on the rotating device in the annealing chamber, or the conveying chamber with the turnover device is arranged at the upstream of the preheating chamber, so that the substrate can be turned from horizontal to vertical, the large area is occupied if a plurality of horizontally placed substrates are subjected to synchronous annealing operation due to the large area of part of the substrates, the horizontal substrate is turned to the vertical state by the turnover device, the occupied space of the device is saved, the conveying and processing quantity of the substrates is increased in the same space, and meanwhile, the plurality of chambers are respectively arranged in the conveying chamber, the preheating chamber and the annealing chamber and are respectively turned over, preheated or annealed synchronously, so that the capacity is effectively improved.

Furthermore, the laser annealing device also comprises an inert gas heating device and a laser irradiation unit which are arranged corresponding to the surface of the substrate, wherein the inert gas heating device is provided with an inlet and an outlet through which the laser passes, and the outlet is aligned with the surface of the substrate.

Further, the laser annealing device also comprises an annealing control system, wherein the annealing control system controls the laser energy of the amorphous silicon irradiated on the substrate; preferably, the annealing control system includes an optical system and a control device, the control device is respectively connected with the optical system and the laser irradiation unit, the optical system detects and analyzes the annealing state of the substrate surface, the control device controls the laser irradiation unit to operate according to the detection and analysis result from the optical system, and the control device controls the laser irradiation unit to adjust the laser energy irradiated to the substrate surface.

Further, the optical system includes a detection device that detects data of an annealing state of the substrate surface, and a data processing and analyzing device that is communicatively connected to the detection device and the control device and analyzes the data of the annealing state.

The laser annealing device is also provided with an annealing control system comprising an optical system and a control device, the annealing state of the surface of the substrate is detected and analyzed through the optical system, and the control device controls the laser irradiation unit to adjust the laser energy irradiated on the surface of the substrate according to the detection and analysis result, so that the uniform conversion from the amorphous silicon layer to the polycrystalline silicon layer is realized.

Furthermore, a filter is arranged at the outlet of the inert gas heating device, and the filter at least comprises a laser hole for controlling the laser to pass through; preferably, the laser annealing device further comprises an electrolysis device, the electrolysis device ionizes the inert gas, and the filter further comprises an ion hole for controlling the ionized inert gas ions to pass through; preferably, the laser hole is arranged in the middle of the filter plate, and the ion hole is arranged at the periphery of the laser hole; preferably, the laser holes are strip-shaped through holes arranged along the middle part of the filter plate, and the ion holes are uniformly arranged on the two sides of the strip-shaped through holes on the filter plate.

Further, a heating component is arranged on the filter sheet and thermally radiates the substrate and the inert gas.

The laser annealing device is also provided with an electrolysis device for electrolyzing inert gas to obtain inert gas ions, and a filter plate with laser holes is arranged at an outlet, so that emitted laser can pass through the laser holes, and the conversion of the amorphous silicon layer to the polycrystalline silicon layer is controlled; meanwhile, the filter disc is also provided with ion holes for controlling the inert gas ions to pass through, and the inert gas ions are controlled to uniformly reach the surface of the substrate by the ion holes, so that the electron mobility of the semiconductor layer on the surface of the substrate can be improved, the threshold voltage of the semiconductor layer is reduced, the switching current is reduced, and the effect of high-quality crystallization is achieved.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.

FIG. 1 is a schematic illustration of a laser annealing process provided in a first embodiment of the present invention;

FIG. 2 is a schematic view of the laser annealing apparatus in the annealing chamber of FIG. 1;

FIG. 3 is a schematic structural diagram of a turning device in the laser annealing device shown in FIG. 2;

FIG. 4 is a schematic illustration of a laser annealing process flow provided in another embodiment of the present invention; and

fig. 5 is a schematic structural view of the filter sheet shown in fig. 3.

Description of reference numerals:

1-a substrate; 2-a manipulator; 3-a transfer chamber; 4-preheating chamber; 5-an annealing chamber; 6-laser annealing device; 7-carrying platform; 8-laser; 9-a filter disc; 10-inert gas heating means; 11-an alternating current power supply; 12-a rotation device; 13-a laser irradiation unit; 14-a turning device; 15-irradiation position; 16-an inert gas containing cavity; 17-an inlet; 18-an outlet; 19-rotating the base; 20-laser hole; 21-ion pores; 22-a heating member; 23-a detection device; 24-a data processing analysis device; 25-control means.

Detailed Description

The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.

Example 1

Fig. 1 shows a substrate annealing apparatus according to the present invention, which mainly comprises: a preheating chamber 4 and an annealing chamber 5. A preheating chamber 4 is provided upstream of the annealing chamber 5, and the substrate 1 is introduced into the preheating chamber 4 by the robot 2. The preheating chamber 4 is provided therein with a heater by which the substrate 1 is subjected to preheating treatment, wherein the heating temperature in the preheating chamber 4 is in the range of 0 ℃ to 600 ℃. After the preheating is completed, the substrate 1 is transferred to the annealing chamber 5 by the robot 2 to be annealed.

The annealing chamber 5 in this embodiment is provided with a laser annealing device 6 and a rotating device 12, wherein the laser annealing device 6 is used for annealing the surface of the substrate 1. As shown in fig. 3, the rotating device 12 in the present embodiment is provided with a plurality of irradiation positions 15 to which the mounting substrate 1 is fixed. As shown in fig. 2, the laser annealing apparatus 6 of the present embodiment includes an inert gas heating apparatus 10, an inert gas accommodating chamber 16, a laser irradiation unit 13, an annealing control system, and an ac power supply 11 that supplies power to the laser annealing apparatus 6. The laser annealing devices 6 are respectively installed on the walls of the annealing chamber 5, and are used for respectively irradiating the substrates 1 arranged at the irradiation positions 15, annealing the substrates 1 by irradiating the surfaces of the substrates 1 through laser scanning, and finally converting the amorphous silicon layer on the surfaces of the substrates 1 into the polycrystalline silicon layer. Wherein the inert gas heating apparatus 10 is provided with an inlet 17 and an outlet 18 through which the laser light emitted from the laser irradiation unit 13 passes, wherein the outlet 18 is directed to the surface of the substrate 1.

When the laser annealing device 6 works, the inert gas heating device 10 heats the inert gas in the inert gas accommodating cavity 16, and the heated inert gas can pass through the filter 9 and preheat the surface of the substrate 1, so that the heating time of the laser irradiation unit 13 on the surface of the substrate 1 in the annealing process can be reduced, the annealing efficiency is improved, and the service life of the laser irradiation unit 13 is prolonged. When the annealing operation is started, the surface of the substrate 1 is first irradiated by the laser irradiation unit 13 so that the temperature of the region of the surface of the substrate 1 corresponding to the outlet 18 is higher than the temperature of the region of the gas not irradiated with the laser, thereby forming a temperature gradient in the direction indicated by the arrow a in fig. 2, the formation of the temperature gradient being more favorable for the formation of polycrystalline silicon of large-sized grains; then, by horizontally moving the laser annealing apparatus, the laser 8 emitted from the laser irradiation unit 13 passes through the inlet 17, the outlet 18, and the laser holes 20 of the filter plate 9 to perform laser scanning on the surface of the substrate 1, thereby converting the amorphous silicon layer on the surface of the substrate 1 into a polycrystalline silicon layer.

An annealing control system is further provided in this embodiment, wherein the annealing control system controls the annealing operation state of the laser annealing apparatus so as to ensure the crystallization effect of the substrate 1. The annealing control system comprises an optical system, a filter 9 and a control device 25, and the optical system comprises a detection device 23 and a data processing and analyzing device 24. As shown in fig. 2, the filter sheet 9 is provided at the outlet 18 of the inert gas heating apparatus 10. The data processing and analyzing device 24 is in communication connection with the detection device 23 and the control device 25, and the control device 25 and the detection device 23 are in communication connection with the laser irradiation unit 13 and the filter 9, respectively. The control device 25 controls the operation of the laser irradiation unit 13 based on the results of the detection and analysis by the detection device 23 and the data processing and analysis device 24. The detection device 23 detects the annealing state of the surface of the substrate 1, specifically, in this embodiment, an ellipsometer is used as the detection device, a single chip microcomputer is used as the data processing and analyzing device and the control device, and the ellipsometer is in communication connection with the single chip microcomputer; the ellipsometer detects the crystallization thickness of the current area on the surface of the substrate 1 and sends the detection data to the single chip with an analysis program; the single chip microcomputer processes and analyzes the detected data and obtains detection and analysis results. The single chip microcomputer adjusts the laser energy irradiated on the surface of the substrate 1 by controlling the laser irradiation unit 13 according to the detection and analysis result, thereby realizing the uniform conversion from the amorphous silicon layer to the polycrystalline silicon layer. It should be understood that the ellipsometer and the single chip with the analysis program are well known in the art and will not be described herein.

The laser annealing device 6 in this embodiment is further provided with an electrolysis device, and inert gas ions can be obtained by dissociating inert gas through the electrolysis device, for example, inert gas Ar obtains energy through external voltage to excite outer layer electrons into an Ar + ion state. The filter 9 includes a laser hole 20 for controlling the passage of the laser light emitted from the laser irradiation unit 13 and an ion hole 21 for controlling the passage of the inert gas ions. The filter sheet 9 has a structure as shown in fig. 5, the middle of the filter sheet 9 is provided with a strip-shaped laser hole 20, and ion holes 21 are uniformly arranged on both sides of the laser hole 20, wherein the ion holes 21 can be square holes as shown in the figure or circular holes. The ions of the inert gas electrolyzed by the high-pressure electrolyzer are directionally moved towards the substrate 1 (i.e. along the direction indicated by the arrow B in FIG. 2) under the action of the electric field and uniformly flow into the surface of the substrate 1 through the ion holes 21 of the filter sheet 9 to perform surface treatment on the substrate film layer, so that the TFT characteristics of the semiconductor layer on the substrate surface can be improved through the treatment, and the effect of high-quality crystallization can be achieved.

As shown in fig. 3, the rotating device 12 in this embodiment is further provided with a turnover device 14. The rotating device 12 includes a rotating base 19 and an overturning device 14 disposed on the rotating base 19, the overturning device 14 is provided with the stage 7, and for example, the stage 7 is connected and mounted on the rotating base 19 through the overturning device 14. The substrate 1 is placed on the stage 7 by, for example, vacuum suction. The inverting device 14 inverts the substrate 1 by inverting the stage 7 to invert the substrate 1 from the horizontal state to the vertical state. The turnover device can select one of transmission connecting devices such as a gear, a chain wheel, a belt wheel and the like. Because the area of the substrate 1 is large, a large floor area is needed in actual operation, so that the operation area can be saved and the productivity can be improved after the substrate 1 is turned over.

As an alternative embodiment, the substrate annealing apparatus shown in fig. 4 may further be provided with a transfer chamber 3. A transfer chamber 3 is provided upstream of the pre-heat chamber 4 and downstream of the robot 2 to transfer the substrate load into the transfer chamber 3. A reversing device may be provided in the transfer chamber 3 so that the substrate 1 is reversed in the transfer chamber 3 by the reversing device.

In order to increase the throughput, the transfer chamber 3, the preheating chamber 4, and the annealing chamber 5 may be configured to have a plurality of chambers. The transfer chamber 3 is configured to simultaneously reverse the substrate 1 in a plurality of chambers, to synchronously preheat the substrate 1 in a plurality of chambers of the preheating chamber, and to synchronously anneal the substrate 1 in a plurality of chambers of the annealing chamber. The cooperative operation of the multiple chambers described above contributes to further efficiency and throughput.

The laser annealing device of the invention mainly comprises the following working processes:

(1) and a plurality of supplied substrates are conveyed to the preheating chamber 4 by the conveying device, and the supplied substrates enter the preheating chamber 4 and are preheated by the heater for the substrates 1.

(2) The preheated substrates 1 are introduced from the preheating chamber 4 into the annealing chamber 5. The substrates 1 disposed at the respective irradiation positions 15 on the rotating device 12 are rotated to positions corresponding to the laser annealing devices 6 disposed on the respective chamber walls by the rotating device 12 in the annealing chamber 5, and the surfaces of the plurality of substrates 1 are simultaneously annealed by the plurality of laser annealing devices 6.

Wherein the annealing treatment process mainly comprises the following steps: a pre-heating process and a laser scanning process.

During the preheating treatment, the inert gas heating apparatus 10 in the laser annealing apparatus 6 is aligned with the surface of the substrate 1. First, the surface of the substrate 1 opposite to the outlet 18 of the inert gas heating apparatus is laser-irradiated by the laser irradiation unit 13 so that the temperature of the laser-irradiated area on the amorphous silicon thin film layer is higher than that of the other area, thereby forming a temperature gradient as shown by an arrow a in fig. 2, which is advantageous for forming large-sized crystal grains. Next, as shown in fig. 5, a heating member 22 is further disposed on at least one side of the filter sheet 9, and the heating member 22 may be a resistance wire. The heat radiation from the heating member 22 can heat both the amorphous silicon film layer of the substrate 1 and the inert gas in the inert gas accommodating chamber 16. Meanwhile, the inert gas heating apparatus 10 heats the inert gas in the inert gas accommodating chamber 16, and the heated inert gas may flow toward the surface of the substrate 1 through the laser hole 20 and the ion hole 21, thereby performing a preheating process on the amorphous silicon layer of the substrate 1. For example, when the surface temperature of the amorphous silicon film layer needs to reach 1000 ℃, the conversion to polysilicon can be realized, and the amorphous silicon layer can reach 600 ℃ to 800 ℃ before the laser scanning operation is carried out by the hot inert gas and the preheating of the heating part 22. Therefore, the time of the subsequent laser scanning operation can be shortened, the annealing efficiency is improved, the irradiation time of the laser emitting unit is reduced, and the service life of the laser emitting unit is prolonged.

The laser scanning process movably irradiates the substrate surface with the laser irradiation unit 13. The laser scanning process further comprises: a detection step, a data processing and analyzing step and an adjusting step. The polycrystalline silicon layer formed by recrystallization of the amorphous silicon layer on the surface of the substrate 1 is detected in real time by the detection device 23, and the obtained detection data is processed and analyzed by the data processing and analyzing device 24 and then fed back to the control device 25. The control device 25 adjusts the laser light irradiated to the substrate surface in the laser emitting device 6 according to the process analysis result from the data processing and analyzing device 24, thereby controlling the uniform conversion of the amorphous silicon layer into the polycrystalline silicon layer. For example, when the average thickness of the amorphous silicon layer in the current region is detected to be 50nm, the working power of the laser irradiation unit 13 is controlled to be 2000W; if the average thickness of the amorphous silicon layer in the current region is detected to be 51nm, controlling the working power of the laser irradiation unit 13 to be 2010W; if the average thickness of the amorphous silicon layer of the current region is detected to be 49nm, the operating power of the laser irradiation unit 13 is controlled to be 1990W.

Meanwhile, the laser scanning process also comprises an inert gas ionization process, the inert gas is electrolyzed by an electrolysis device arranged in the annealing chamber 5, and the electrolyzed inert gas ions reach the surface of the substrate 1 after passing through the filter 9. The substrate film layer is subjected to surface treatment by ions obtained by electrolyzing the inert gas, so that the electron mobility of the semiconductor layer on the surface of the substrate can be improved, and the improvement of the electron mobility is beneficial to improving the resolution of a screen; the threshold voltage of the semiconductor layer is reduced, and the reduction of the threshold voltage is beneficial to reducing the energy loss; meanwhile, the switching current threshold can be reduced, and the reduction of the switching current threshold is beneficial to accelerating the response time of the screen brightness, so that the effect of optimizing the substrate surface crystallization is achieved.

A transfer chamber 3 may also be provided upstream of the preheating chamber 4. When the transfer chamber 3 is provided, the substrate 1 is inverted when entering the transfer chamber 3, and the substrate 1 is inverted from horizontal to vertical. When the transfer chamber 3 is not provided, the substrate 1 is inverted when the substrate 1 enters the annealing chamber 5, and the substrate 1 is inverted from horizontal to vertical.

The laser annealing device of this embodiment has newly increased the transfer chamber, through the transport mode who changes the base plate in transfer chamber or annealing room, turns over the base plate to vertical state by the level, practices thrift device occupation of land space to the conveying and the processing quantity of base plate have been improved in the same space. In addition, because the transfer chamber, the preheating chamber and the annealing chamber can be provided with a plurality of chambers, high-efficiency annealing can be realized, and the laser annealing capacity is improved.

It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.

Claims

1. An apparatus for annealing a substrate, comprising: the annealing chamber is internally provided with a laser annealing device for annealing the surface of the substrate; the method is characterized in that: the annealing chamber is provided with a rotating device, the rotating device is provided with a plurality of irradiation positions for fixing the substrate, and the irradiation positions are correspondingly provided with turnover devices for turning over the substrate; at least one laser annealing device for irradiating the substrate at the irradiation position.

2. The substrate annealing apparatus according to claim 1, wherein: the laser annealing device is provided with a plurality of laser annealing devices, and the laser annealing devices are respectively arranged on the chamber walls corresponding to the irradiation positions.

3. The substrate annealing apparatus according to claim 2, wherein: further comprising a preheat chamber disposed upstream of the anneal chamber, the preheat chamber preheating the substrate.

4. The substrate annealing apparatus according to claim 3, wherein: the heating temperature of the preheating chamber ranges from 0 ℃ to 600 ℃.

5. The substrate annealing apparatus according to claim 3, wherein: the substrate annealing apparatus further includes a transfer chamber that transfers the incoming substrate to the preheating chamber.

6. The substrate annealing apparatus according to claim 5, wherein: and a turnover device is arranged in the conveying chamber and is used for turning over the substrate.

7. The substrate annealing apparatus according to claim 5, wherein: the preheating chamber, the conveying chamber and the annealing chamber are provided with a plurality of chambers, and turning devices are arranged in the conveying chamber and/or the chambers of the annealing chamber.

8. The substrate annealing apparatus according to any one of claims 1 to 7, wherein: the laser annealing device further comprises an inert gas heating device and a laser irradiation unit, wherein the inert gas heating device and the laser irradiation unit are correspondingly arranged on the surface of the substrate, an inlet and an outlet are formed in the inert gas heating device, the laser penetrates through the inlet and the outlet, and the outlet is aligned to the surface of the substrate.

9. The substrate annealing apparatus according to claim 8, wherein: the laser annealing device further comprises an annealing control system, and the annealing control system controls laser energy of the amorphous silicon irradiated onto the substrate.

10. The substrate annealing apparatus according to claim 9, wherein: the annealing control system comprises an optical system and a control device, the control device is respectively connected with the optical system and the laser irradiation unit, the optical system detects and analyzes the annealing state of the surface of the substrate, the control device controls the laser irradiation unit to work according to the detection and analysis result from the optical system, and the control device controls the laser irradiation unit to adjust the laser energy irradiated to the surface of the substrate.

11. The substrate annealing apparatus according to claim 10, wherein: the optical system comprises a detection device and a data processing and analyzing device, wherein the detection device detects the data of the annealing state of the surface of the substrate, and the data processing and analyzing device is in communication connection with the detection device and the control device and analyzes the data of the annealing state.

12. The substrate annealing apparatus according to claim 8, wherein: and a filter disc is also arranged at the outlet of the inert gas heating device, and the filter disc at least comprises a laser hole for controlling the laser to pass through.

13. The substrate annealing apparatus according to claim 12, wherein: the laser annealing device further comprises an electrolysis device, the electrolysis device ionizes the inert gas, and the filter disc further comprises an ion hole for controlling ionized inert gas ions to pass through.

14. The substrate annealing apparatus according to claim 13, wherein: the laser hole is arranged in the middle of the filter plate, and the ion hole is arranged on the periphery of the laser hole.

15. The substrate annealing apparatus according to claim 13, wherein: the laser holes are strip-shaped through holes arranged along the middle of the filter disc, and the ion holes are uniformly arranged on the two sides of the strip-shaped through holes on the filter disc.

16. The substrate annealing apparatus according to claim 12, wherein: the filter disc is further provided with a heating part, and the heating part carries out heat radiation on the substrate and the inert gas.