CN107078125B - Power amplifier module - Google Patents
Power amplifier module Download PDFInfo
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- CN107078125B CN107078125B CN201580048597.XA CN201580048597A CN107078125B CN 107078125 B CN107078125 B CN 107078125B CN 201580048597 A CN201580048597 A CN 201580048597A CN 107078125 B CN107078125 B CN 107078125B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Amplifiers (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention can improve the heat radiation performance of the power amplification module with the power amplifier and the SAW duplexer. The power amplification module includes: a substrate having first and second major surfaces; a power amplifier having a first surface on which an electrode is formed and a second surface opposite to the first surface, the first surface being mounted so as to be opposite to the first main surface of the substrate; a surface acoustic wave duplexer having a first surface on which electrodes are formed and a second surface opposite to the first surface, and mounted so that the first surface is opposite to a first main surface of a substrate; a heat dissipation portion provided on the second main surface of the substrate; a heat radiation path connecting at least a part of a connection portion between the power amplifier and the first main surface to the heat radiation portion; an insulating resin covering the power amplifier and the surface acoustic wave duplexer; a conductive shield covering the surface of the insulating resin; and a first conductive portion that is provided on the second surface of the surface acoustic wave duplexer and is electrically connected to the conductive shield.
Description
Technical Field
The invention relates to a power amplification module.
Background
In a mobile communication device such as a mobile phone, a Power Amplifier (PA) is used to amplify the Power of a Radio Frequency (RF) signal transmitted to a base station. In addition, since the wireless communication device shares an antenna for transmission and reception, a duplexer is used to separate a reception signal from a base station and a transmission signal to the base station. As a duplexer, for example, there is a Surface Acoustic Wave (SAW) duplexer (for example, patent document 1).
In recent years, as wireless communication devices are miniaturized, a power amplification module in which a power amplifier and a duplexer are packaged as 1 product has been attracting attention (for example, patent document 2). In addition, as a mounting method for miniaturizing the module, face-down mounting is known (for example, patent document 3).
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open No. 2014-120966
Patent document 2: japanese patent laid-open No. 2005-311230
Patent document 3: japanese patent laid-open No. 2007-266539
Disclosure of Invention
Technical problem to be solved by the invention
In the power amplification module, it is necessary to dissipate heat from a heat generating component such as a power amplifier. For example, in the semiconductor device disclosed in patent document 3, the emitter electrode of the power amplifier mounted face down on the front surface of the package substrate is connected to the heat conduction hole formed in the package substrate, whereby the heat of the power amplifier is dissipated from the back surface of the package substrate. Thus, the power amplifier mounted face down can radiate heat from the rear surface of the package substrate through the heat conduction hole.
However, as disclosed in patent document 1, for example, the SAW duplexer includes a cavity as an operation space of the comb electrode portion as a heating element. When the SAW duplexer is mounted face down, a cavity is present between the comb electrode portion and the package substrate, and therefore heat dissipation through the heat conduction hole is difficult.
The present invention has been made in view of the above circumstances, and an object thereof is to improve heat dissipation of a power amplification module including a power amplifier and a SAW duplexer.
Technical scheme for solving technical problem
A power amplification module according to an aspect of the present invention includes: a substrate having a first main surface and a second main surface; a power amplifier having a first face on which an electrode is formed and a second face opposite to the first face, and mounted so that the first face is opposite to a first main face of a substrate; a surface acoustic wave duplexer having a first surface on which electrodes are formed and a second surface opposite to the first surface, and mounted so that the first surface is opposite to a first main surface of a substrate; a heat dissipation portion provided on the second main surface of the substrate; a heat radiation path connecting at least a part of a connection portion between the power amplifier and the first main surface to the heat radiation portion; an insulating resin covering the power amplifier and the surface acoustic wave duplexer; a conductive shield covering the surface of the insulating resin; and a first conductive portion that is provided on the second surface of the surface acoustic wave duplexer and is electrically connected to the conductive shield.
Effects of the invention
According to the present invention, the heat dissipation of the power amplification module including the power amplifier and the SAW duplexer can be improved.
Drawings
Fig. 1 is a diagram showing a configuration of a power amplification module 10A according to an embodiment of the present invention.
Fig. 2A is a diagram illustrating a face-down mounting process in the manufacturing process of the power amplification module 10A.
Fig. 2B is a diagram illustrating a lead forming step in the manufacturing process of the power amplification module 10A.
Fig. 2C is a diagram illustrating a resin sealing step in the manufacturing process of the power amplification module 10A.
Fig. 2D is a diagram illustrating a resin polishing step in the manufacturing process of the power amplification module 10A.
Fig. 2E is a diagram showing a conductive shield forming step in the manufacturing process of the power amplifier module 10A.
Fig. 3 is a diagram showing a configuration of a power amplifier module 10B according to a modification of the power amplifier module 10A.
Fig. 4 is a diagram showing a configuration of a power amplifier module 10C according to a modification of the power amplifier module 10A.
Fig. 5 is a diagram showing a configuration of a power amplification module 10D according to a modification of the power amplification module 10A.
Detailed Description
Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a diagram showing a configuration of a power amplification module 10A according to an embodiment of the present invention.
As shown in fig. 1, the power amplification module 10A includes a power amplifier 30 and a SAW duplexer 40 mounted face down on a package substrate 20. The power amplifier 30 and the SAW duplexer 40 are covered with an insulating resin 50. The insulating resin 50 is formed of, for example, epoxy resin. The surface of the insulating resin 50 is covered with the conductive shield 60. The conductive shield 60 is formed of a metal such as gold, silver, copper, aluminum, or the like.
The package substrate 20 has an upper surface 21 (first main surface) and a lower surface 22 (second main surface). Wiring patterns 23a to 23e are provided on the upper surface 21 of the package substrate 20. Electrodes 24a to 24c are provided on the lower surface 22 of the package substrate 20. The package substrate 20 is provided with heat conduction holes 25a and 25b penetrating from the upper surface 21 to the lower surface 22. The heat conduction holes 25a, 25b (heat dissipation paths) electrically connect the wiring pattern 23b and the electrode 24 b. The electrode 24b is a ground electrode to which a ground potential is applied, and functions as a heat sink. Further, a ground wiring 26 is provided in the package substrate 20. The ground wiring 26 is connected to the electrode 24b via the heat conduction holes 25a, 25b, for example.
The power amplifier 30 is a component for amplifying an RF signal transmitted to a base station, and includes, for example, a transistor for power amplification. The power amplifier 30 has a surface 33 (first surface) on which the electrodes 31a to 31c are provided, and a surface 32 (second surface) facing the surface 33. The power amplifier 30 is mounted face down on the upper surface 21 of the package substrate 20 via bumps 34a to 34c connected to the electrodes 31a to 31 c. For example, the electrode 31b is connected to an emitter of a transistor constituting the power amplifier 30, and is electrically connected to the electrode 24b via the bump 34b, the wiring pattern 23b, and the thermal vias 25a and 25 b. Thus, heat generated by the emitter, which is a heat generating portion of the power amplifier 30, is dissipated by conduction to the electrode 24 b.
A metal layer 35 is provided on the conductive shield side surface 32 of the power amplifier 30. The metal layer 35 is formed of a metal such as gold, silver, copper, aluminum, titanium, or the like. Further, on the metal layer 35, a lead 36 (conductive path) is provided. The lead 36 is cut at the conductive shield 60 side, and is connected to the conductive shield 60 at the cut portions 37a and 37 b. That is, the metal layer 35 and the lead 36 form a conductive portion (second conductive portion) electrically connected to the conductive shield 60. The lead 36 is made of a metal such as gold, silver, copper, or aluminum. The metal layer 35 is provided on the surface 33 of the power amplifier 30, and thus heat generated by the power amplifier 30 is also dissipated through the metal layer 35. Further, since the metal layer 35 is connected to the conductive shield 60 via the lead 36, the heat radiation effect can be further improved.
The conductive shield 60 is connected to the ground wiring 26, for example, on the side surface of the package substrate 20. Thus, the potential of the metal layer 35 of the power amplifier 30 is fixed at the ground level. This stabilizes the operation of the power amplifier 30.
The SAW duplexer 40 is a component for separating a reception signal from a base station and a transmission signal to the base station. The SAW duplexer 40 includes a surface 43 (first surface) on which the electrodes 41a and 41b are provided, and a surface 42 (second surface) facing the surface 43. The SAW duplexer 40 is mounted face-down on the upper surface 21 of the package substrate 20 via bumps 44a, 44b connected to the electrodes 41a, 41 b. The SAW duplexer 40 has a comb electrode portion 45. The SAW duplexer 40 includes a cavity 46 as an operation space of the comb electrode unit 45.
A metal layer 47 (first conductive portion) is provided on the conductive shield side surface 43 of the SAW duplexer 40. The metal layer 47 is formed of a metal such as gold, silver, copper, aluminum, titanium, or the like. Further, on the metal layer 47, a lead 48 (conductive path) is provided. The lead 48 is cut at the conductive shield 60 side and connected to the conductive shield 60 at the cut portions 49a and 49 b. That is, the metal layer 47 and the lead 48 form a conductive portion (first conductive portion) electrically connected to the conductive shield 60. The lead 48 is made of a metal such as gold, silver, copper, or aluminum. A metal layer 47 is provided on the surface 43 of the SAW duplexer 40, and heat generated by the SAW duplexer 40 is also dissipated via the metal layer 47. Further, since the metal layer 47 is connected to the conductive shield 60 via the lead 48, the heat radiation effect can be further improved.
The conductive shield 60 is connected to the ground wiring 26, for example, on the side surface of the package substrate 20. Accordingly, the potential of the metal layer 47 of the SAW duplexer 40 is fixed at the ground level. This stabilizes the operation of the SAW duplexer 40. In particular, in the SAW duplexer 40, a reception signal from a base station and a transmission signal to the base station are connected in series via the metal layer 47. Therefore, by fixing the metal layer 47 at the ground level, the above-mentioned crosstalk (crosstalk) can be suppressed
Next, a manufacturing process of the power amplifier module 10A will be described with reference to fig. 2A to 2E.
First, as shown in fig. 2A, the power amplifier 30 and the SAW duplexer 40 are mounted face down on the upper surface 21 of the package substrate 20.
Next, as shown in fig. 2B, a wire 36 is formed by wire bonding on a metal layer 35 provided on the surface 32 of the power amplifier 30. Similarly, on metal layer 47 provided on surface 42 of SAW duplexer 40, lead 48 is formed by wire bonding. The leads 36 and 48 may be provided in plural numbers. The leads 36 and 48 may be formed on the metal layers 35 and 47 before face-down mounting.
The lead 36 may be formed from a metal layer 35 provided on the surface 32 of the power amplifier 30 to a GND electrode (not shown) on the first main surface of the package substrate 20. The lead 48 is also formed for the SAW duplexer.
Thereafter, as shown in fig. 2C, the power amplifier 30 and the SAW duplexer 40 are covered (sealed) with an insulating resin 50. The leads 36 and 48 are also covered with an insulating resin 50.
Next, as shown in fig. 2D, the surface of insulating resin 50 is polished by grinder 100 to expose leads 36 and 48. Specifically, a part of the lead 36 is cut, and the cut portions 37a and 37b are exposed. Similarly, a part of the lead 48 is cut, and the cut portions 49a and 49b are exposed. Further, the leads 36 and 48 may be exposed without cutting the leads 36 and 48.
Finally, the conductive shield 60 is formed so as to cover the insulating resin 50. Thereby, the conductive shield 60 is connected to the metal layer 35 via the cut portions 37a and 37b of the lead 36. The conductive shield 60 is connected to the metal layer 47 via the cut portions 49a and 49b of the lead 48.
Through the above steps, the power amplification module 10A shown in fig. 1 can be manufactured.
Fig. 3 is a diagram showing a configuration of a power amplifier module 10B according to a modification of the power amplifier module 10A. Note that the same elements as those of the power amplification module 10A are denoted by the same reference numerals, and description thereof is omitted.
The power amplification module 10B includes a conductive portion 70 and a conductive paste 71 instead of the lead 36. The conductive portion 70 (conductive path) is, for example, a columnar metal or a metal pin, and the lower surface thereof is connected to the metal layer 35 with a conductive paste 71. Further, the upper surface of the conductive portion 70 is connected to the conductive shield 60. The conductive portion 70 is a metal such as gold, silver, copper, or aluminum. The conductive paste 71 is a material or solder in which conductive particles such as silver and carbon are mixed in a resin.
The power amplification module 10B includes a conductive portion 80 and a conductive paste 81 instead of the lead 48. The conductive portion 80 is, for example, a columnar shape, and the lower surface thereof is connected to the metal layer 47 with a conductive paste 81. Further, the upper surface of the conductive portion 80 is connected to the conductive shield 60. The conductive portion 80 is a metal such as gold, silver, copper, or aluminum. The conductive paste 81 is a material or solder in which conductive particles such as silver and carbon are mixed in a resin.
In the power amplification module 10B, the conductive portions 70 and 80 are used instead of the leads 36 and 48, thereby improving heat dissipation of the power amplifier 30 and the SAW duplexer 40. Further, as in the power amplification module 10A, the operation of the power amplifier 30 and the SAW duplexer 40 can be stabilized by connecting the conductive shield 60 to the ground wiring 26.
Fig. 4 is a diagram showing a configuration of a power amplifier module 10C according to a modification of the power amplifier module 10A. Note that the same elements as those of the power amplification module 10A are denoted by the same reference numerals, and description thereof is omitted.
The power amplification module 10C does not have the leads 36, 48 of the power amplification module 10A. Instead, holes 90, 91 are formed above the power amplifier 30 and the SAW duplexer 40. The holes 90 and 91 are formed by irradiating the insulating resin 50 with laser light from above the power amplifier 30 and the SAW duplexer 40, for example. With the holes 90 and 91 formed, the surfaces of the metal layers 35 and 47 are exposed. After that, the conductive shield 60 is formed by sputtering or the like, whereby the conductive shield 60 is connected to the metal layers 35 and 47.
In the power amplification module 10C, the metal layers 35 and 47 are directly connected to the conductive shield 60, thereby improving heat dissipation of the power amplifier 30 and the SAW duplexer 40. Further, as in the power amplification module 10A, the operation of the power amplifier 30 and the SAW duplexer 40 can be stabilized by connecting the conductive shield 60 to the ground wiring 26.
Fig. 5 is a diagram showing a configuration of a power amplification module 10D according to a modification of the power amplification module 10A. Note that the same elements as those of the power amplification module 10A are denoted by the same reference numerals, and description thereof is omitted.
The power amplification module 10D does not have the leads 36, 48 of the power amplification module 10A. Instead, the metal layers 35, 47 are thicker than the power amplification module 10A. Also, the upper surfaces of the metal layers 35, 47 are directly connected to the conductive shield 60.
In the power amplification module 10D, the metal layers 35 and 47 are directly connected to the conductive shield 60, thereby improving heat dissipation of the power amplifier 30 and the SAW duplexer 40. Further, as in the power amplification module 10A, the operation of the power amplifier 30 and the SAW duplexer 40 can be stabilized by connecting the conductive shield 60 to the ground wiring 26.
The power amplification modules 10A to 10D, which are examples of the embodiment of the present invention, have been described above.
In the power amplification modules 10A to 10D, a conductive portion electrically connected to the conductive shield 60 is provided on the surface of the SAW duplexer 40 mounted face down on the conductive shield 60 side. Therefore, the SAW duplexer 40 in which heat is hardly dissipated from the package substrate 20 side due to the influence of the cavity 46 can dissipate heat from the conductive shield 60 side.
In addition, in the power amplification module 10A, the lead 48 is provided as a conductive path for connecting the metal layer 47 and the conductive shield 60. The leads 48 can be conveniently formed on the metal layer 47 by wire bonding. Thus, the manufacturing process of the power amplification module 10A can be facilitated.
In the power amplifier module 10A, the lead 48 is partially cut by polishing the insulating resin 50 to form cut portions 49a and 49 b. The cut portions 49a and 49b are connected to the conductive shield 60. As shown in fig. 2D, when the insulating resin 50 is polished, a high-precision operation is required so as not to cut and expose the lead 48. In contrast, in the power amplification module 10A, the polishing of the insulating resin 50 does not need to be stopped at a portion where the lead 48 is not cut. Thus, the manufacturing process of the power amplification module 10A can be facilitated. Further, the lead 48 can be reliably connected to the conductive shield 60 by the cut portions 49a and 49 b.
In the power amplification modules 10A to 10D, the conductive shield 60 is connected to the ground wiring 26 provided on the package substrate 20. Accordingly, the potential of the metal layer 47 of the SAW duplexer 40 is fixed to the ground level, and the operation of the SAW duplexer 40 can be stabilized.
In the power amplifier modules 10A to 10D, the power amplifier 30 that radiates heat from the lower surface 22 of the package substrate 20 via the heat conduction holes 25a and 25b is also provided with a conductive portion electrically connected to the conductive shield 60 on the surface on the conductive shield 60 side. This can improve the heat dissipation of the power amplifier 30.
In the power amplification modules 10A to 10D, the power amplifier 30 is also provided with a conductive portion electrically connected to the conductive shield 60 on the surface on the conductive shield 60 side, but the conductive portion may not be provided.
The embodiments described above are provided to facilitate understanding of the present invention, and are not intended to limit and explain the present invention. The present invention may be modified or improved without departing from the spirit of the present invention, and equivalents thereof are also included in the scope of the present invention. That is, the present invention is not limited to the above embodiments, but can be modified in various ways. For example, the elements provided in the embodiments, and the arrangement, materials, conditions, shapes, dimensions, and the like thereof are not limited to the examples, and can be appropriately modified. The elements included in the embodiments can be combined in any combination within a technically possible range, and such combinations are also included in the scope of the present invention as long as they include the technical features of the present invention.
Description of the reference symbols
10A, 10B, 10C, 10D power amplification module
20 packaging substrate
21 upper surface of the container
22 lower surface
23a, 23b, 23c, 23d, 23e … wiring pattern
24a, 24b, 24c, 31a, 31b, 31c, 41a, 41b electrodes
25a, 25b heat conduction hole
26 ground wiring
30 power amplifier
34a, 34b, 34c, 44a, 44b bumps
35. 47 metal layer
36. 48 lead wire
37a, 37b, 49a, 49b cutting part
40 SAW duplexer
45 comb electrode part
46 cavity
50 insulating resin
60 conductive shield
70. 80 conductive part
71. 81 electroconductive paste
90. 91 hole
Claims (6)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-009763 | 2015-01-21 | ||
| JP2015009763 | 2015-01-21 | ||
| PCT/JP2015/079742 WO2016117196A1 (en) | 2015-01-21 | 2015-10-21 | Power amplifier module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107078125A CN107078125A (en) | 2017-08-18 |
| CN107078125B true CN107078125B (en) | 2020-06-02 |
Family
ID=56416758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580048597.XA Active CN107078125B (en) | 2015-01-21 | 2015-10-21 | Power amplifier module |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10404226B2 (en) |
| CN (1) | CN107078125B (en) |
| WO (1) | WO2016117196A1 (en) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018101943A (en) | 2016-12-21 | 2018-06-28 | 株式会社村田製作所 | High frequency module |
| WO2018164160A1 (en) * | 2017-03-10 | 2018-09-13 | 株式会社村田製作所 | Module |
| WO2018168391A1 (en) * | 2017-03-13 | 2018-09-20 | 三菱電機株式会社 | Microwave device and antenna |
| WO2019156051A1 (en) | 2018-02-08 | 2019-08-15 | 株式会社村田製作所 | High-frequency module |
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| WO2016117196A1 (en) | 2016-07-28 |
| CN107078125A (en) | 2017-08-18 |
| US10404226B2 (en) | 2019-09-03 |
| US20170317002A1 (en) | 2017-11-02 |
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