[go: up one dir, main page]

CN106849898A - A kind of 17% relative bandwidth low-loss SAW filter and preparation method thereof - Google Patents

A kind of 17% relative bandwidth low-loss SAW filter and preparation method thereof Download PDF

Info

Publication number
CN106849898A
CN106849898A CN201611148487.3A CN201611148487A CN106849898A CN 106849898 A CN106849898 A CN 106849898A CN 201611148487 A CN201611148487 A CN 201611148487A CN 106849898 A CN106849898 A CN 106849898A
Authority
CN
China
Prior art keywords
radical
wavelength
saw filter
arm
relative bandwidth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201611148487.3A
Other languages
Chinese (zh)
Inventor
闫坤坤
魏勇平
杨思川
黄歆
张恩宇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZHONGKE FEIHONG SCIENCE AND TECHNOLOGY Co Ltd BEIJING
Original Assignee
ZHONGKE FEIHONG SCIENCE AND TECHNOLOGY Co Ltd BEIJING
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ZHONGKE FEIHONG SCIENCE AND TECHNOLOGY Co Ltd BEIJING filed Critical ZHONGKE FEIHONG SCIENCE AND TECHNOLOGY Co Ltd BEIJING
Priority to CN201611148487.3A priority Critical patent/CN106849898A/en
Publication of CN106849898A publication Critical patent/CN106849898A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02818Means for compensation or elimination of undesirable effects
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/64Filters using surface acoustic waves
    • H03H9/6406Filters characterised by a particular frequency characteristic
    • H03H9/6413SAW comb filters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/026Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the tuning fork type

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

The invention discloses a kind of 17% relative bandwidth low-loss SAW filter, including wafer material, wafer material is provided with trapezoidal sound table transducer and surface coating absorbent treatment, and trapezoidal sound table transducer includes series resonance arm and parallel resonance arm.The wafer material for using is 15 ° of YX LiNbO3, its electromechanical coupling factor (k2) it is more than 20%, it is adaptable to prepare broadband low loss device;Design structure uses trapezoidal design structure, and it obtains the response of wave filter by the use of sound wave face wave resonator as the base impedance element of ladder type topology.Outside the band of the passband of the resonant frequency of series arm resonator and the anti-resonance frequency shaping filter of parallel arm, the anti-resonance frequency of series arm resonator and the resonant frequency shaping filter of parallel arm.The low-loss SAW filter of 3dB relative bandwidths 17% is realized, wherein emulation frequency response figure is as shown in figure 3,3dB relative bandwidths are 19%;Actual measurement device center frequency is 415M, and three dB bandwidth is 70.6M, and relative bandwidth is 17%, and 3.6dB, passband fluctuation 0.8dB is lost.

Description

A kind of 17% relative bandwidth low-loss SAW filter and preparation method thereof
Technical field
The present invention relates to a kind of design of SAW filter and technology of preparing, more particularly to a kind of 17% relative bandwidth low-loss SAW filter and preparation method thereof.
Background technology
With information system requirement more and more higher, communication passes voice, image and develops into biography video etc., its output transmission from original It is wide that MHz magnitudes even tens MHz magnitudes are changed into from kHz magnitudes.Future communications will also be towards two-forty, Large Copacity, highly sensitive Degree direction is developed.
At present, SAW filter realizes that broadband mainly uses 128 ° of-LiNbO3, YZ-LiNbO3 and 41 ° of three kinds of-LiNbO3 Substrate material.Wherein 128 °-LiNbO3 and YZ-LiNbO3 materials can realize that 3dB maximum relative bandwidths are about 60%, but needs With using, and larger (16~20dB) is lost, meanwhile, the upper and lower side width of same finger of sector design structure of use is not One, for medium, high frequency device, finger width is smaller, and technology difficulty is larger;41 ° of-LiNbO3 materials can realize compared with low-loss (3~ 5dB), without matching, but its 3dB maximum relative bandwidths are only about 10%.Therefore, it is now main to realize that broadband is low using LC wave filters The index request of loss, but LC wave filter volumes are larger, usually 25mm*9mm or 15mm*8mm, rectangular degree is poor, and needs anti- Polyphony is tried.
The content of the invention
It is an object of the invention to provide a kind of with small, small volume the 17% relative bandwidth low-loss sound table filter of wide, loss Ripple device and preparation method thereof.
The purpose of the present invention is achieved through the following technical solutions:
17% relative bandwidth low-loss SAW filter of the invention, including wafer material, the wafer material are provided with Sound table transducer and surface coating absorbent treatment, the sound table transducer designs are trapezium structure, including series resonance arm and parallel connection Resonance arm, one end of the series resonance arm is provided with input electrode, the other end and is provided with output electrode, under the parallel resonance arm End is provided with earth electrode.
The preparation method of above-mentioned 17% relative bandwidth low-loss SAW filter of the invention, comprises the following steps:
Step A, from wafer material;
Step B, design structure is the sound table transducer of trapezium structure on the wafer material;
Step C, the electrode material that sound table transducer is used is copper film;
Step D, surface coating sound-absorbing material.
As seen from the above technical solution provided by the invention, the low damage of 17% relative bandwidth provided in an embodiment of the present invention Consumption SAW filter and preparation method thereof, its with it is wide, small, small volume is lost, it is adaptable to transceiver channel radio-frequency front-end filter or Intermediate frequency filtering.
Brief description of the drawings
Fig. 1 is the entirety of 17% relative bandwidth low-loss SAW filter provided in an embodiment of the present invention and preparation method thereof Structural representation.
Fig. 2 is the structural representation of ladder-type filter in the embodiment of the present invention;
Fig. 3 is emulation frequency response figure in the embodiment of the present invention;
Fig. 4 is actual measurement frequency response figure in the embodiment of the present invention.
Specific embodiment
With reference to the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete Ground description, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Based on this Inventive embodiment, the every other implementation that those of ordinary skill in the art are obtained under the premise of creative work is not made Example, belongs to protection scope of the present invention.
17% relative bandwidth low-loss SAW filter of the invention, its preferably specific embodiment is:
Including wafer material, the wafer material is provided with sound table transducer and surface coating absorbent treatment, and the sound table is changed Energy device is designed as trapezium structure, including series resonance arm and parallel resonance arm, and one end of the series resonance arm is provided with input electricity Pole, the other end are provided with output electrode, and the lower end of the parallel resonance arm is provided with earth electrode.
The preparation method of 17% relative bandwidth low-loss SAW filter of the invention, its preferably specific embodiment It is:
Comprise the following steps:
Step A, from wafer material;
Step B, design structure is the sound table transducer of trapezium structure on the wafer material;
Step C, the electrode material that sound table transducer is used is copper film;
Step D, surface coating sound-absorbing material.
In the step A, the wafer material for using is 15 ° of YX-LiNbO3, wafer thickness is 0.40~0.65 μm, the back side 360~No. 1000 feather pluckings.
In the step B, trapezium structure series is Pyatyi, comprising three series resonance arms and two parallel resonance arms, its In:
The wavelength of the first series resonance arm is λ s1, and aperture is 25~31 λ s1, refers to that radical, for 127~137, reflects lattice wave A length of λ R1=λ s1, refer to that radical is 15~22;
The wavelength of the second series resonance arm is λ s2, and aperture is 25~31 λ s2, refers to that radical, for 95~110, reflects lattice wave λ R2=λ s2 long, refer to that radical is 15~22;
The wavelength of the 3rd series resonance arm is λ s3, and aperture is 28~31 λ s3, refers to that radical, for 127~137, reflects lattice wave λ R3=λ s3 long, refer to that radical is 15~22;
The wavelength of the first parallel resonance arm is λ p1, and aperture is 15~20 λ p1, refers to that radical, for 115~130, reflects lattice wave λ R1=λ p1 long, refer to radical for 5~18, false fingering line width and length weight;
The wavelength of the second parallel resonance arm P2 is λ p2, and aperture is 15~20 λ p2, refers to that radical is 115~130, reflecting grating Wavelength X R2=λ p2, refer to radical for 5~18, false fingering line width and length weight.
In the step C, the thickness wavelength ratio of copper film electrode material is 2%~9%.
In the step D, the thickness of the surface coating sound-absorbing material for using is 0.5~5 μm.
17% relative bandwidth low-loss SAW filter of the invention and preparation method thereof, is filtered by improving low-loss sound table The relative bandwidth of ripple device, the problems such as outer need to being matched to solve traditional big bandwidth SAW filter, be lost big, expands surface acoustic wave filter Ripple device range of application.SAW filter can realize broadband, low-loss, to replace LC wave filters, greatly reduce volume, beneficial to whole machine The miniaturization of system, meanwhile, SAW filter uses semiconductor technology, exempts from debugging, and one is improve relative to LC wave filters Cause property and reliability, in terms of index, sound table has rectangular degree higher, more preferable to being had using the spurious signal near frequency range Inhibition.
Wafer material of the invention uses 15 ° of YX-LiNbO3Material, its electromechanical coupling factor (k2) it is more than 20%, it is adaptable to Prepare broadband low loss device;Design structure uses trapezoidal design structure, and the schematic diagram of trapezium structure is as shown in figure 1, it is utilized Sound wave face wave resonator obtains the response of wave filter as the base impedance element of ladder type topology.Series arm resonator The passband of the anti-resonance frequency shaping filter of resonant frequency and parallel arm, the anti-resonance frequency and parallel arm of series arm resonator Resonant frequency shaping filter band outside.Trapezoidal design structure has the advantages that to be lost that small, rectangular degree is high and small volume, can lead to The difference regulation bandwidth of the resonant frequency of series arm resonator and the anti-resonance frequency of parallel arm is overregulated, broadband low loss is prepared SAW filter.Electrode material uses copper film, Cu to belong to low velocity section bar material as Au, Ag material, and copper film can be effective The speed of LOVE ripples is reduced, while increasing electromechanical coupling factor and because Cu membrane conductivities are high, in the case of relatively thin Cu films, The ohmic loss of device will not also increase, therefore, relative bandwidth can be increased using copper film, reduce loss is adapted to preparation broadband low Loss SAW filter.
Method as shown in the present invention, the method such as weighting and coating sound-absorbing material is referred to by design and processes optimization, vacation Treatment, realizes the low-loss SAW filter of 3dB relative bandwidths 17%, wherein emulation frequency response figure is as shown in figure 3,3dB is relative With a width of 19%;Actual measurement frequency response figure is as shown in figure 4, survey device center frequency for 415M, three dB bandwidth is 70.6M, relative bandwidth It is 17%, 3.6dB, passband fluctuation 0.8dB is lost.
Specific embodiment:
The overall structure of 17% relative bandwidth low-loss SAW filter is as shown in Figure 1:
Trapezoidal sound table transducer 102, surface coating absorbent treatment 103 including wafer material 101, copper grating array,
Wherein specific requirement is as follows:
(1) wafer material is 15 ° of YX-LiNbO3, wafer thickness is 0.40~0.65 μm, the feather plucking of the back side 360~1000.
(2) the trapezoidal design structure of sound table transducer 102 is trapezoidal design structure, and its structure chart is as shown in Figure 2.Trapezoidal sound table Transducer 102 can be according to specific targets requirement and the series and combination composing mode of packaged type selective resonance device.
(3) functional membrane is copper film, and thickness wavelength ratio (h/ λ) is 2%~9%.
(4) surface coating layer is sound-absorbing material, and thickness is 0.5~5 μm.
Trapezoidal design structural representation of the present invention is as shown in Fig. 2 it mainly includes five parts:Input electrode 201, output electricity Pole 202, earth electrode 203, series resonance arm 204, parallel resonance arm 205, wherein specific requirement are as follows:
(1) Pyatyi trapezoidal design structure is used, comprising three series resonance arms and two parallel resonance arms.
(2) input electrode, output electrode and ground electrode area are not less than 100 μm * 100 μm.
(3) series resonance arm S1 wavelength is λ s1, the λ s1 of aperture 25~31, refers to radical 127~137, reflecting grating wavelength X R1 =λ s1, refer to radical 15~22.
(4) series resonance arm S2 wavelength is λ s2, the λ s2 of aperture 25~31, refers to radical 95~110, reflecting grating wavelength X R2 =λ s2, refer to radical 15~22.
(5) series resonance arm S3 wavelength is λ s3, the λ s3 of aperture 28~31, refers to radical 127~137, reflecting grating wavelength X R3 =λ s3, refer to radical 15~22.
(6) parallel resonance arm P1 wavelength is λ p1, the λ p1 of aperture 15~20, refers to radical 115~130, reflecting grating wavelength X R1 =λ p1, refer to radical 5~18, false fingering line width and length weight.
(7) parallel resonance arm P2 wavelength is λ p2, the λ p2 of aperture 15~20, refers to radical 115~130, reflecting grating wavelength X R2 =λ p2, refer to radical 5~18, false fingering line width and length weight.
The preparation method of 17% relative bandwidth low-loss SAW filter, including following several steps:
Step (1), the wafer material for using is 15 ° of YX-LiNbO3;
Step (2), the design structure for using is trapezoidal design structure;
Step (3), the electrode material for using is copper film;
Step (4), surface coating sound-absorbing material.
The wafer material that the step (1) uses is 15 ° of YX-LiNbO3, and wafer thickness is 0.40~0.65 μm, the back side 360~No. 1000 feather pluckings.
Trapezium structure series is Pyatyi in the step (2), comprising three series resonance arms and two parallel resonance arms, filter Ripple device can be according to specific targets requirement and the series and combination composing mode of packaged type selective resonance device.
The wavelength of series resonance arm S1 is λ s1 in the step (2), and aperture is 25~31 λ s1, refers to that radical is 127~137 Root, reflecting grating wavelength is λ R1=λ s1, refers to that radical is 15~22.
The wavelength of series resonance arm S2 is λ s2 in the step (2), and aperture is 25~31 λ s2, refers to that radical is 95~110 Root, reflecting grating wavelength X R2=λ s2 refer to that radical is 15~22.
The wavelength of series resonance arm S3 is λ s3 in the step (2), and aperture is 28~31 λ s3, refers to that radical is 127~137 Root, reflecting grating wavelength X R3=λ s3 refer to that radical is 15~22.
The wavelength of parallel resonance arm P1 is λ p1 in the step (2), and aperture is 15~20 λ p1, refers to that radical is 115~130 Root, reflecting grating wavelength X R1=λ p1 refer to radical for 5~18, false fingering line width and length weight.
The wavelength of parallel resonance arm P2 is λ p2 in the step (2), and aperture is 15~20 λ p2, refers to that radical is 115~130 Root, reflecting grating wavelength X R2=λ p2 refer to radical for 5~18, false fingering line width and length weight.
The electrode material used in the step (3) is copper film, and thickness wavelength ratio (h/ λ) is 2%~9%.
The surface coating sound-absorbing material used in the step (4), thickness is 0.5~5 μm.
The above, the only present invention preferably specific embodiment, but protection scope of the present invention is not limited thereto, Any one skilled in the art in the technical scope of present disclosure, the change or replacement that can be readily occurred in, Should all be included within the scope of the present invention.Therefore, protection scope of the present invention should be with the protection model of claims Enclose and be defined.

Claims (6)

1. a kind of 17% relative bandwidth low-loss SAW filter, it is characterised in that including wafer material, on the wafer material Be provided with sound table transducer and surface coating absorbent treatment, the sound table transducer designs be trapezium structure, including series resonance arm and Parallel resonance arm, one end of the series resonance arm is provided with input electrode, the other end and is provided with output electrode, the parallel resonance arm Lower end be provided with earth electrode.
2. a kind of preparation method of 17% relative bandwidth low-loss SAW filter described in claim 1, it is characterised in that bag Include following steps:
Step A, from wafer material;
Step B, design structure is the sound table transducer of trapezium structure on the wafer material;
Step C, the electrode material that sound table transducer is used is copper film;
Step D, surface coating sound-absorbing material.
3. the preparation method of 17% relative bandwidth low-loss SAW filter according to claim 2, it is characterised in that institute State in step A, the wafer material for using is 15 ° of YX-LiNbO3, wafer thickness is 0.40~0.65 μm, the back side 360~1000 Feather plucking.
4. the preparation method of 17% relative bandwidth low-loss SAW filter according to claim 3, it is characterised in that institute State in step B, trapezium structure series is Pyatyi, comprising three series resonance arms and two parallel resonance arms, wherein:
The wavelength of the first series resonance arm is λ s1, and aperture is 25~31 λ s1, refers to that radical is 127~137, and reflecting grating wavelength is λ R1=λ s1, refer to that radical is 15~22;
The wavelength of the second series resonance arm is λ s2, and aperture is 25~31 λ s2, refers to that radical is 95~110, reflecting grating wavelength X R2 =λ s2, refer to that radical is 15~22;
The wavelength of the 3rd series resonance arm is λ s3, and aperture is 28~31 λ s3, refers to that radical is 127~137, reflecting grating wavelength X R3=λ s3, refer to that radical is 15~22;
The wavelength of the first parallel resonance arm is λ p1, and aperture is 15~20 λ p1, refers to that radical is 115~130, reflecting grating wavelength X R1=λ p1, refer to radical for 5~18, false fingering line width and length weight;
The wavelength of the second parallel resonance arm P2 is λ p2, and aperture is 15~20 λ p2, refers to that radical is 115~130, reflecting grating wavelength λ R2=λ p2, refer to radical for 5~18, false fingering line width and length weight.
5. 17% relative bandwidth low-loss SAW filter according to claim 2 and preparation method thereof, it is characterised in that In the step C, the thickness wavelength ratio of copper film electrode material is 2%~9%.
6. 17% relative bandwidth low-loss SAW filter according to claim 2 and preparation method thereof, it is characterised in that In the step D, the thickness of the surface coating sound-absorbing material for using is 0.5~5 μm.
CN201611148487.3A 2016-12-13 2016-12-13 A kind of 17% relative bandwidth low-loss SAW filter and preparation method thereof Pending CN106849898A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201611148487.3A CN106849898A (en) 2016-12-13 2016-12-13 A kind of 17% relative bandwidth low-loss SAW filter and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201611148487.3A CN106849898A (en) 2016-12-13 2016-12-13 A kind of 17% relative bandwidth low-loss SAW filter and preparation method thereof

Publications (1)

Publication Number Publication Date
CN106849898A true CN106849898A (en) 2017-06-13

Family

ID=59139928

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201611148487.3A Pending CN106849898A (en) 2016-12-13 2016-12-13 A kind of 17% relative bandwidth low-loss SAW filter and preparation method thereof

Country Status (1)

Country Link
CN (1) CN106849898A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110995293A (en) * 2019-11-04 2020-04-10 三维通信股份有限公司 In-band fluctuation suppression device and radio frequency system
WO2021068670A1 (en) * 2019-10-11 2021-04-15 天津大学 Filter circuit and method for improving performance of filter circuit, and signal processing device
CN113676154A (en) * 2021-08-13 2021-11-19 重庆中易智芯科技有限责任公司 A low insertion loss high frequency surface acoustic wave filter
CN116232270A (en) * 2023-03-07 2023-06-06 重庆邮电大学 A High Frequency Multilayer Film Surface Acoustic Wave Resonator

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1257347A (en) * 1998-11-24 2000-06-21 株式会社村田制作所 Surface sound wave filter
CN1751436A (en) * 2003-12-01 2006-03-22 株式会社村田制作所 filter device
JP2015119449A (en) * 2013-12-20 2015-06-25 株式会社村田製作所 Surface acoustic wave filter

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1257347A (en) * 1998-11-24 2000-06-21 株式会社村田制作所 Surface sound wave filter
CN1751436A (en) * 2003-12-01 2006-03-22 株式会社村田制作所 filter device
JP2015119449A (en) * 2013-12-20 2015-06-25 株式会社村田製作所 Surface acoustic wave filter

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021068670A1 (en) * 2019-10-11 2021-04-15 天津大学 Filter circuit and method for improving performance of filter circuit, and signal processing device
CN110995293A (en) * 2019-11-04 2020-04-10 三维通信股份有限公司 In-band fluctuation suppression device and radio frequency system
CN110995293B (en) * 2019-11-04 2022-06-07 三维通信股份有限公司 In-band fluctuation suppression device and radio frequency system
CN113676154A (en) * 2021-08-13 2021-11-19 重庆中易智芯科技有限责任公司 A low insertion loss high frequency surface acoustic wave filter
CN116232270A (en) * 2023-03-07 2023-06-06 重庆邮电大学 A High Frequency Multilayer Film Surface Acoustic Wave Resonator

Similar Documents

Publication Publication Date Title
US12340787B2 (en) Temperature compensated surface acoustic wave device and methods of manufacturing the same
US10469052B2 (en) Elastic wave device, high-frequency front-end circuit, and communication device
CN102811032B (en) Electronic circuit and electronic module
CN106849898A (en) A kind of 17% relative bandwidth low-loss SAW filter and preparation method thereof
CN109286384A (en) Multiplexer, high-frequency front-end circuit and communication device
CN105245199B (en) High q-factor one-port saw resonator applied to radio temperature sensor
CN108631746A (en) A kind of SAW filter
CN112511128A (en) Lamb wave resonator with POI structure and manufacturing method thereof
CN117394823A (en) An elastic wave filter, elastic wave multiplexer and radio frequency front-end circuit
CN120415367A (en) A TF-SAW resonator and its preparation method, and filter
CN118432575A (en) Narrow-band surface acoustic wave resonator
JP4407696B2 (en) Surface acoustic wave device
CN103455683B (en) Design and layout method of piezoelectric acoustic wave filter
CN205017279U (en) High Q value of being applied to wireless temperature sensor is single -ended to SAW resonator
CN100502239C (en) A surface acoustic wave duplexer
CN118432576A (en) Elastic wave filter and radio frequency front end structure
WO2018113138A1 (en) Ultra-large-bandwidth surface acoustic wave filter
CN203504508U (en) Surface Acoustic Wave Filters for Mobile Phones
CN203313141U (en) Monolithic integrated high-isolation low-loss surface acoustic wave narrow-band filter
CN201563107U (en) Surface acoustic wave filter
US8791773B2 (en) Surface acoustic wave filter and duplexer
JP3387028B2 (en) Surface acoustic wave device
CN103117727A (en) High-impedance surface acoustic wave resonator
CN203027216U (en) High-impedance surface acoustic wave resonator structure
CN101820266A (en) High-temperature stability acoustic surface wave filter suitable for high frequency

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB03 Change of inventor or designer information
CB03 Change of inventor or designer information

Inventor after: Yang Sichuan

Inventor after: Yan Kunkun

Inventor after: Wei Yongping

Inventor after: Huang Xin

Inventor after: Zhang Enyu

Inventor before: Yan Kunkun

Inventor before: Wei Yongping

Inventor before: Yang Sichuan

Inventor before: Huang Xin

Inventor before: Zhang Enyu

RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20170613