CN106829935A - Horizontally arranged multi-chamber graphene continuous growth equipment - Google Patents

Abstract

The invention discloses a multi-cavity graphene continuous growth device which is transversely arranged and is convenient for detecting the tension of a graphene growth film. The graphene continuous growth equipment comprises a vacuum pump, a discharging cooling cavity, a receiving cooling cavity, a first high-temperature process cavity, a second high-temperature process cavity and a transition cavity, wherein the vacuum pump is used for vacuumizing the discharging cooling cavity and the receiving cooling cavity; a tension detection device is arranged in the transition cavity; two ends of the first high-temperature process cavity and two ends of the second high-temperature process cavity are both provided with a uniform-flow heat insulation device; the first high-temperature process cavity and the second high-temperature process cavity are both provided with heaters; discharging graphene growth substrates on the graphene growth substrate discharging roller sequentially pass through the discharging cooling zone guide roller, the first high-temperature process cavity, the transition cavity, the second high-temperature process cavity and the receiving cooling cavity guide roller and are finally rolled and received on the graphene substrate receiving roller. By adopting the multi-cavity graphene continuous growth equipment, the final quality of the graphene film can be ensured, and the production efficiency is improved.

Description

Horizontally arranged multi-chamber graphene continuous growth equipment

technical field

The invention relates to a graphene growth device, in particular to a horizontally arranged multi-chamber graphene continuous growth device.

Background technique

It is well known that although graphene is only one carbon atomic layer thick, due to its own structural characteristics, it shows the best in many worlds, such as the thinnest, lightest, toughest, and smallest resistivity. Graphene is called the material world. "Black Gold", the "King of New Materials" in the 21st century.

The large-scale preparation of graphene thin films, after extensive research in recent years, chemical vapor deposition is one of the most promising methods for large-scale preparation of graphene thin films. The CVD method to prepare high-quality graphene film is to heat and decompose the carbon source into activated carbon groups under a vacuum condition of about 1000 degrees, and then further decompose on transition metal substrates such as Cu and Ni to form graphene. However, there has been no major breakthrough in the rapid and continuous large-scale preparation of large-area, high-quality graphene films, which greatly limits the efficiency and output of graphene preparation, and hinders the rapid development of the graphene film industry.

Roll-to-roll graphene growth is a dynamic growth process, which is essentially different from sheet-type static growth. For the intermittent growth of high-quality graphene in sheets, the graphene growth substrate is usually annealed for a long time near its melting point to recrystallize the polycrystalline growth substrate and increase the crystal domain area of the growth substrate, which is conducive to the preparation of high-quality graphite. vinyl film. In recent years, although patents have begun to study roll-to-roll graphene production equipment and processes, it is difficult to achieve controllable production of high-quality graphene because only one high-temperature process chamber is set up, and annealing and growth are performed simultaneously. For a high-temperature process chamber, if roll-to-roll high-temperature annealing is performed first, and then rolled back to grow roll-to-roll graphene, the growth efficiency of graphene will be seriously affected. In addition, none of the previous patents considered the impact of high-temperature heat radiation on the sealing device and the uniform distribution of gas in the process chamber.

Contents of the invention

The technical problem to be solved by the present invention is to provide a horizontally arranged multi-chamber graphene continuous film that can separate and synchronize the high-temperature annealing pretreatment of the graphene growth substrate from the high-temperature growth, and at the same time facilitate the detection of the tension of the graphene growth substrate. growing equipment.

The technical solution adopted by the present invention to solve the technical problem is: a horizontally arranged multi-chamber graphene continuous growth equipment, including a cooling chamber for discharging materials, a cooling chamber for receiving materials, and a pumping chamber for the cooling chambers for discharging materials and the cooling chamber for receiving materials. Vacuum vacuum pump; the discharge cooling chamber is provided with a graphene growth substrate discharge roller and a guide roller in the discharge cooling area, and the receiving cooling chamber is provided with a graphene substrate receiving roller and a receiving cooling chamber Guide roller;

The horizontally arranged multi-chamber graphene continuous growth equipment also includes a first high-temperature process chamber, a second high-temperature process chamber, and a transition chamber; both ends of the first high-temperature process chamber and both ends of the second high-temperature process chamber are set There is a uniform flow heat insulation device; heaters are arranged on the first high-temperature process chamber and the second high-temperature process chamber;

The first high-temperature process chamber, the transition chamber and the second high-temperature process chamber are arranged laterally, and a tension detection device for detecting the tension of the graphene growth substrate is arranged in the transition chamber;

One end of the first high-temperature process chamber is connected and communicated with the discharging cooling chamber, and the other end is connected and communicated with the transition chamber. One end of the second high-temperature process chamber is connected and communicated with the transition chamber, and the other end is connected and communicated with the receiving cooling chamber. Connected; the graphene growth substrate is discharged on the discharge roller, and the graphene growth substrate passes through the discharge cooling zone guide roller, the first high-temperature process chamber, the transition chamber, the second high-temperature process chamber, and the receiving cooling chamber guide roller. Graphene substrate on the take-up roll.

Preferably, the guide rollers in the receiving cooling chamber are water-cooled guide rollers.

Further, both ends of the first high-temperature process chamber are respectively connected to the discharge cooling chamber and the transition chamber through multi-point air intake sealing flanges, and both ends of the second high-temperature process chamber are respectively connected to the discharge cooling chamber and the transition chamber through multi-point air intake sealing flanges. The transition chamber is connected with the receiving cooling chamber.

Preferably, the multi-point air intake sealing flange includes an outer flange, an inner flange and a sealing rubber ring, the inner flange has a boss end, and the outer flange is provided with a groove matching the inner flange, The sealing rubber ring is installed in the groove, the boss end of the inner flange is inserted into the groove of the outer flange, and the sealing rubber ring is pressed tightly, and the inner flange is provided with a connecting ring connected to the inner ring of the inner flange. ventilation channel.

Preferably, the uniform flow heat insulation device includes at least two layers of heat insulation boards and support columns, and the support columns are arranged between two adjacent layers of heat insulation boards; the heat insulation board is provided with a central through hole and uniform Distributed air holes, the air holes on the adjacent two layers of heat insulation boards are dislocated.

Further, the central through hole on the heat shield is a radial through groove.

Preferably, the discharging cooling chamber is provided with a vacuum pump, and the receiving cooling chamber is provided with a vacuum pump.

Preferably, the heater is a resistance heater.

The beneficial effects of the present invention are: the horizontally arranged multi-chamber graphene continuous growth equipment of the present invention is provided with two high-temperature process chambers between the discharging cooling chamber and the receiving cooling chamber, and the two chambers are connected through the transition chamber. The two high-temperature process chambers are separated; at the same time, the transition chamber and the two high-temperature process chambers are arranged laterally; therefore, the high-temperature annealing pretreatment and high-temperature growth of the graphene growth substrate are respectively carried out in the two high-temperature process chambers, and are carried out simultaneously, which solves the problem of substrate treatment. The freedom of temperature setting during the process and the process gas during the substrate treatment process can be selected at will, eliminating the influence of the carbon source for graphene growth on the substrate surface treatment process. Through the multi-cavity setting, each link in the graphene growth process is distributed to each cavity separately to avoid the mutual influence of each link in the roll-to-roll growth process, which will affect the final quality of the graphene film product; secondly, through multiple The setting of the cavity can make each process separate and synchronized, so the production efficiency of the roll-to-roll graphene film can be improved. Again, the transition chamber 5 and the two high-temperature process chambers are arranged laterally, so it is convenient to arrange a tension detection device in the transition chamber, and it can prevent the graphene growth substrate from forming a bend when entering another process chamber from one process chamber, thereby ensuring The quality of the graphene film product; at the same time, the tension of the graphene growth base material can be monitored by setting the tension detection device, so as to ensure the quality of the product.

Description of drawings

Fig. 1 is the structural representation of the multi-chamber graphene continuous growth equipment of lateral arrangement in the embodiment of the present invention;

Fig. 2 is a schematic structural diagram of a current equalizing heat insulation device in an embodiment of the present invention;

Fig. 3 is a schematic structural diagram of a multi-point air intake sealing flange in an embodiment of the present invention;

Marked in the figure: 1-feeding cooling chamber, 2-first high temperature process chamber, 3-second high temperature process chamber, 4-receiving cooling chamber, 41-graphene substrate receiving roller, 42-receiving cooling chamber guide Roller, 5-transition chamber, 51-tension detection device, 6-graphene growth substrate, 7-vacuum pump, 8-multi-point air inlet sealing flange, 81-ventilation channel, 82-outer flange, 83-inner flange , 84-sealing rubber ring, 9-uniform heat insulation device, 91-heat shield, 92-support shaft, 93-central through hole, 10-heater, 11-graphene growth substrate discharge roller, 12-put Material cooling zone guide roller.

detailed description

The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

As shown in Figures 1 to 3, the horizontally arranged multi-chamber graphene continuous growth equipment of the present invention includes a discharge cooling chamber 1, a receiving cooling chamber 4, and a cooling chamber for the discharging cooling chamber 1 and a receiving chamber. The vacuum pump 7 for evacuating the material cooling chamber 4; the graphene growth substrate discharge roller 11 and the discharging cooling zone guide roller 12 are arranged in the said discharging cooling chamber 1, and the graphite receiving chamber 4 is provided with a Vinyl base receiving roller 41 and receiving cooling cavity guide roller 42;

The horizontally arranged multi-chamber graphene continuous growth equipment also includes a first high-temperature process chamber 2, a second high-temperature process chamber 3, and a transition chamber 5; the two ends of the first high-temperature process chamber 2 and the second high-temperature process chamber 3 Both ends of each are provided with uniform flow heat insulation devices 9; the first high-temperature process chamber 2 and the second high-temperature process chamber 3 are provided with heaters 10;

The first high-temperature process chamber 2, the transition chamber 5 and the second high-temperature process chamber 3 are arranged laterally, and the transition chamber 5 is provided with a tension detection device 51 for detecting the tension of the graphene growth substrate 6;

One end of the first high-temperature process chamber 2 is connected and communicated with the discharge cooling chamber 1, and the other end is connected and communicated with the transition chamber 5. One end of the second high-temperature process chamber 3 is connected and communicated with the transition chamber 5, and the other end is connected with the receiving chamber 5. The material cooling chamber 4 is connected and communicated; the graphene growth substrate discharge roller 11 is fed with the graphene growth substrate 6 through the discharge cooling zone guide roller 12, the first high-temperature process chamber 2, the transition chamber 5, and the second high-temperature process chamber in sequence 3. The guide roller 42 of the receiving and cooling chamber is finally rolled onto the graphene substrate receiving roller 41 .

Specifically, the main function of the vacuum pump 7 for vacuumizing the discharge cooling chamber 1 and the receiving cooling chamber 4 is to vacuumize the entire system, especially for the discharging cooling chamber 1 and the receiving cooling chamber 4 Do a vacuum. The method of vacuumizing the discharging cooling chamber 1 and the receiving cooling chamber 4 can be directly provided with a vacuum pump 7 between the discharging cooling chamber 1 and the receiving cooling chamber 4; the discharging cooling chamber 1 and the receiving cooling chamber 4 Vacuum pumps 7 can be installed separately or share one vacuum pump 7; it is also possible to install the vacuum pump 7 on the high-temperature process chamber or the transition chamber 5, and pass through the sealing flange between the first high-temperature process chamber 2 and the discharge cooling chamber 1 It is also possible to separate the multi-chamber process from sealing flange air intake between the second high-temperature process chamber 3 and the receiving cooling chamber 4 .

Specifically, the discharge graphene growth substrate 6 on the graphene growth substrate discharge roller 11 passes through the discharge cooling zone guide roller 12, the first high-temperature process chamber 2, the transition chamber 5, the second high-temperature process chamber 3, and the receiving chamber in sequence. The guide roller 42 of the material cooling chamber is finally rolled onto the graphene substrate receiving roller 41, which refers to the graphene growth substrate discharging roller 11 on which the graphene growth substrate 6 is guided by the guide roller 12, and then passes through the first high-temperature process chamber in sequence. 2. The transition chamber 5 and the second high-temperature process chamber 3 do not contact the inner walls of each chamber when passing through the first high-temperature process chamber 2, transition chamber 5, and second high-temperature process chamber 3, and finally guide through the receiving cooling chamber After the roller 42 is guided, it is finally wound up on the graphene substrate receiving roller 41 .

Since the first high-temperature process chamber 2, the transition chamber 5, and the second high-temperature process chamber 3 are arranged laterally, the graphene growth substrate 6 is always parallel to the horizontal plane during the growth process. The span between the process chambers reduces the influence of gravity on the morphology of the graphene growth substrate and the appearance of the graphene film product during the high temperature process, and at the same time facilitates the detection of the tension of the graphene growth substrate at high temperature, so that it is convenient to set in the transition chamber 5 There is a tension detection device 51 for detecting the tension of the graphene growth substrate 6 .

During production:

First, the graphene growth substrate 6 is installed on the graphene growth substrate discharge roller 11 of the discharge cooling chamber 1, and one end of the graphene growth substrate 6 is successively passed through the discharge cooling zone guide roller 12 and the first high-temperature process by discharging. The cavity 2, the transition cavity 5, the second high-temperature process cavity 3, and the guide roller 42 of the receiving and cooling cavity are rolled onto the graphene substrate receiving roller 41. Then, the discharging cooling chamber 1 and the receiving cooling chamber 4 are vacuumized by a vacuum pump. Then the heater 10 is arranged on the first high-temperature process chamber 2 to heat the first high-temperature process chamber 2, so that the temperature in the first high-temperature process chamber 2 reaches the temperature required for graphene high-temperature annealing, and the second high-temperature process chamber 3 The heater 10 provided above heats the second high-temperature process chamber 3 so that the temperature in the second high-temperature process chamber 3 reaches the temperature required for graphene growth; at the same time, the corresponding process gas is filled in the high-temperature process chamber. Then start the graphene growth substrate discharge roller 11 to discharge, and start the graphene substrate recovery roller 41 to collect the graphene growth substrate 6 with graphene. Therefore, the graphene growth substrate 6 is subjected to high-temperature annealing in the first high-temperature process chamber 2 and graphene growth in the second high-temperature process chamber 3 , thereby realizing continuous production of graphene. When the graphene growth substrate 6 passes through the transition chamber 5 , since the transition chamber 5 is provided with a tension detection device 51 for detecting the tension of the graphene growth substrate 6 . By setting the tension detection device 51, the tension of the base material of the graphene growth substrate 6 can be monitored, thereby ensuring the quality of the product.

In summary, the horizontally arranged multi-chamber graphene continuous growth equipment of the present invention is provided with two high-temperature process chambers between the discharging cooling chamber 1 and the receiving cooling chamber 4, and the transition chamber 5 will The two high-temperature process chambers are separated; at the same time, the transition chamber 5 and the two high-temperature process chambers are arranged laterally; therefore, the high-temperature annealing pretreatment and high-temperature growth of the graphene growth substrate are respectively carried out in the two high-temperature process chambers, and are carried out simultaneously, which solves the problem of The freedom of temperature setting during the substrate treatment process, and the process gas during the substrate treatment process can be selected at will, and the influence of the carbon source for graphene growth on the substrate surface treatment process is eliminated. Through the multi-cavity setting, each link in the graphene growth process is distributed to each cavity separately to avoid the mutual influence of each link in the roll-to-roll growth process, which will affect the final quality of the graphene film product; secondly, through multiple The setting of the cavity can make each process run synchronously, so the production efficiency of the roll-to-roll graphene film can be improved. Again, the transition chamber 5 and the two high-temperature process chambers are arranged laterally, so it is convenient to arrange a tension detection device 51 in the transition chamber 5, and can avoid the graphene growth substrate 6 from forming a bend when entering another process chamber from one process chamber, Thereby, the surface flatness of the graphene growth substrate 6 can be guaranteed; at the same time, the tension of the base material of the graphene growth substrate 6 can be monitored by setting the tension detection device 51, thereby ensuring the quality of the product.

In order to improve the cooling rate of the growing graphene substrate, further in the present invention, the guide roller 42 of the receiving cooling chamber adopts a water-cooled guide roller. Therefore, the temperature of the growing graphene substrate can be quickly lowered to room temperature, avoiding the reduction in the quality of the graphite film due to thermal expansion and contraction during the winding process.

The discharge cooling chamber 1, the first high-temperature process chamber 2, the second high-temperature process chamber 3, the receiving cooling chamber 4, and the transition chamber 5 can be connected in various ways, such as welding, or using ordinary flanges. connect. In order to facilitate the installation and maintenance of the equipment, and to facilitate the introduction of process gas into the process chamber, preferably, both ends of the first high-temperature process chamber 2 are respectively connected to the discharge cooling chamber 1 and the transition chamber through a multi-point air inlet sealing flange 8 The chamber 5 is connected, and both ends of the second high-temperature process chamber 3 are connected to the transition chamber 5 and the receiving cooling chamber 4 through multi-point air inlet sealing flanges 8 respectively.

The multi-point air intake sealing flange 8 can be in various forms. In order to simplify the structure, reduce manufacturing costs, and facilitate installation, one of the preferred methods is: as shown in Figure 3, the multi-point air intake sealing method The flange 8 includes an outer flange 82, an inner flange 83 and a sealing rubber ring 84. The inner flange 83 has a boss end, and the outer flange 82 is provided with a groove matching the inner flange 83. The sealing rubber The ring 84 is installed in the groove, the boss end of the inner flange 83 is inserted into the groove of the outer flange 82, and the sealing rubber ring 84 is pressed tightly, and the inner flange 83 is provided with a connecting inner flange 83 The ventilation channel 81 of the circle.

The uniform flow heat insulation device 9 can adopt a single piece of uniform flow heat insulation board. In order to improve the heat insulation effect and make the gas evenly distributed in the high-temperature process chamber, preferably, as shown in Figure 2, the uniform flow heat insulation The device 9 includes at least two layers of heat insulation boards 91 and support columns 92, and the support columns 92 are arranged between adjacent two layers of heat insulation boards 91; the heat insulation boards 91 are provided with a central through hole 93 and evenly distributed Air vents, the air vents on the two adjacent layers of heat insulation boards 91 are dislocated. Specifically, the heat insulation board can be made of different materials such as quartz, ceramics, molybdenum, stainless steel, copper, etc., and the quartz heat insulation board is preferred in the present invention.

By setting the uniform flow heat insulation device 9 as the above-mentioned structure, it can effectively block the influence of part of the heat radiation on the vacuum sealing rubber ring; on the other hand, the process gas can also be evenly dispersed inside the process chamber to reach the surface of the graphene growth substrate They are all in a uniform environment to achieve the purpose of uniform preparation of graphene samples. Furthermore, the central through hole 93 on the heat shield 91 is a radial through groove.

Both the discharge cooling chamber 1 and the receiving cooling chamber 4 need to be vacuumized, and the discharging cooling chamber 1 and the receiving cooling chamber 4 can be vacuumed by using a vacuum pump 7 in common. The separate control of the pressure in the discharge cooling chamber 1 and the receiving cooling chamber 4, in order to facilitate the independent control of the pressure in the discharging cooling chamber 1 and the receiving cooling chamber 4, preferably, the discharging cooling chamber 1 is provided with a vacuum pump 7. The receiving cooling chamber 4 is provided with a vacuum pump 7 .

The heater 10 can adopt various methods, such as a heating furnace. In order to facilitate the control of the heating temperature of the heater 10, the preferred heater 10 of the present invention is a resistance heater.

Embodiment one

As shown in Figures 1, 2, and 3, the multi-chamber graphene continuous growth equipment arranged horizontally includes a discharging cooling chamber 1 and a receiving cooling chamber 4; a graphene growth chamber is arranged in the discharging cooling chamber 1 The base discharge roller 11 and the discharge cooling zone guide roller 12, the charging cooling chamber 4 is provided with a graphene substrate receiving roller 41 and the receiving cooling chamber guide roller 42; the discharging cooling chamber 1 is provided with There is a vacuum pump 7, and the receiving cooling cavity 4 is provided with a vacuum pump 7.

The horizontally arranged multi-chamber graphene continuous growth equipment also includes a first high-temperature process chamber 2, a second high-temperature process chamber 3, and a transition chamber 5; both ends of the first high-temperature process chamber 2 and the second high-temperature process chamber Both ends of the chamber 3 are provided with uniform flow heat insulation devices 9; the first high-temperature process chamber 2 and the second high-temperature process chamber 3 are provided with heaters 10; the heaters 10 are resistance heaters.

As shown in Figure 1, the first high-temperature process chamber 2, the transition chamber 5, and the second high-temperature process chamber 3 are arranged laterally, and the transition chamber 5 is provided with a tension detection device 51 for detecting the tension of the graphene growth substrate 6 . The horizontal arrangement is convenient for installation, and the tension of graphene can be detected by setting a tension detection device in the transition chamber to control product quality.

One end of the first high-temperature process chamber 2 is connected and communicated with the discharge cooling chamber 1 through a multi-point air intake sealing flange 8, and the other end is connected and communicated with the transition chamber 5 through a multi-point air intake sealing flange 8. One end of the second high-temperature process chamber 3 is connected and communicated with the transition chamber 5 through a multi-point air intake sealing flange 8, and the other end is connected and communicated with the receiving cooling chamber 4 through a multi-point air intake sealing flange 8; the graphene growth substrate is discharged The graphene growth substrate 6 on the roller 11 passes through the discharge cooling zone guide roller 12, the first high-temperature process chamber 2, the transition chamber 5, the second high-temperature process chamber 3, and the receiving cooling chamber guide roller 42 to finally roll up graphite vinyl base take-up roll 41.

The multi-point air intake sealing flange 8 includes an outer flange 82, an inner flange 83 and a sealing rubber ring 84. The inner flange 83 has a boss end, and the outer flange 82 is provided with a ring that matches the inner flange 83. groove, the sealing rubber ring 84 is installed in the groove, the boss end of the inner flange 83 is inserted into the groove of the outer flange 82, and the sealing rubber ring 84 is pressed tightly, and the inner flange 83 is A vent channel 81 communicating with the inner ring of the inner flange 83 is provided. The guide roller 42 of the receiving cooling chamber adopts a water-cooled guide roller.

The uniform flow heat insulation device 9 includes at least two layers of heat insulation boards 91 and support columns 92, and the support columns 92 are arranged between two adjacent layers of heat insulation boards 91; Holes 93 and evenly distributed air holes, the air holes on the two adjacent layers of heat insulation boards 91 are misplaced.

Claims (8)

1. the continuous growth apparatus of multi-chamber Graphene of lateral arrangement, including blowing cooling chamber (1), rewinding cooling chamber (4) and For the vavuum pump (7) that the blowing cooling chamber (1) and rewinding cooling chamber (4) are vacuumized；Set in the blowing cooling chamber (1) Have in graphene growth substrate emptying roller (11) and blowing cooling zone guide roller (12), the rewinding cooling chamber (4) and be provided with stone Mertenyl bottom material receiving roller (41) and rewinding cooling chamber guide roller (42)；

It is characterized in that：Also include the first high-temperature technology chamber (2), the second high-temperature technology chamber (3) and adapter cavity (5)；Described The two ends in the two ends in one high-temperature technology chamber (2) and the second high-temperature technology chamber (3) are provided with uniform flow heat-proof device (9)；Described Heater (10) is provided with one high-temperature technology chamber (2) and the second high-temperature technology chamber (3)；

The first high-temperature technology chamber (2), adapter cavity (5) and the second high-temperature technology chamber (3) lateral arrangement, the adapter cavity (5) tension detecting apparatus (51) of detection graphene growth substrate (6) tension force are provided with；

Described first high-temperature technology chamber (2) one end is connected and connects with blowing cooling chamber (1), and the other end is connected with adapter cavity (5) And connect, described second high-temperature technology chamber (3) one end is connected and connects with adapter cavity (5), and the other end is with rewinding cooling chamber (4) even Connect and connect；Blowing graphene growth substrate (6) sequentially passes through blowing cooling zone and leads in graphene growth substrate emptying roller (11) To roller (12), the first high-temperature technology chamber (2), adapter cavity (5), the second high-temperature technology chamber (3), rewinding cooling chamber guide roller (42) most Retracting eventually is arrived on graphene-based bottom material receiving roller (41).

2. continuous growth apparatus of multi-chamber Graphene of lateral arrangement as claimed in claim 1, it is characterised in that：The rewinding Cooling chamber guide roller (42) uses water-cooled guide roller.

3. continuous growth apparatus of multi-chamber Graphene of lateral arrangement as claimed in claim 1, it is characterised in that：First high temperature The two ends of process cavity (2) are connected with blowing cooling chamber (1) and adapter cavity (5) respectively by multiple spot inlet seal flange (8), the The two ends in two high-temperature technology chambers (3) by multiple spot inlet seal flange (8) respectively with adapter cavity (5) and rewinding cooling chamber (4) Connection.

4. continuous growth apparatus of multi-chamber Graphene of lateral arrangement as claimed in claim 3, it is characterised in that：The multiple spot Inlet seal flange (8) includes outward flange (82), inner flange (83) and O-ring seal (84), and the inner flange (83) is with convex You, the outward flange (82) is provided with the groove matched with inner flange (83), the O-ring seal (84) in groove, In the groove at boss end insertion outward flange (82) of the inner flange (83), and top tight sealing cushion rubber (84), the inner flange (83) venting channels (81) of connection inner flange (83) inner ring are provided with.

5. continuous growth apparatus of multi-chamber Graphene of lateral arrangement as claimed in claim 1, it is characterised in that：The uniform flow Heat-proof device (9) includes at least two-layer thermal insulation board (91) and support column (92), and the support column (92) is arranged on adjacent two layers Between thermal insulation board (91)；Central through hole (93) and equally distributed air-vent, the phase are provided with the thermal insulation board (91) Air-vent on adjacent two-layer thermal insulation board (91) is dislocatedly distributed.

6. continuous growth apparatus of multi-chamber Graphene of lateral arrangement as claimed in claim 5, it is characterised in that：It is described heat-insulated Central through hole (93) on plate (91) is groove radially.

7. continuous growth apparatus of multi-chamber Graphene of lateral arrangement as claimed in claim 1, it is characterised in that：The blowing Cooling chamber (1) is provided with a vavuum pump (7), and the rewinding cooling chamber (4) is provided with a vavuum pump (7).

8. continuous growth apparatus of multi-chamber Graphene of lateral arrangement as claimed in claim 1, it is characterised in that：The heating Device (10) uses resistance heater.