CN106784066A - Prepare the light-sensitive material of rare earth doped broad band photo resistance - Google Patents
Prepare the light-sensitive material of rare earth doped broad band photo resistance Download PDFInfo
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- 229910052761 rare earth metal Inorganic materials 0.000 title claims abstract description 44
- 239000000463 material Substances 0.000 title claims abstract description 41
- 150000002910 rare earth metals Chemical class 0.000 title claims abstract description 31
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 17
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000002360 preparation method Methods 0.000 claims abstract description 15
- 229910002651 NO3 Inorganic materials 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims description 46
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 33
- 239000000919 ceramic Substances 0.000 claims description 22
- 238000005507 spraying Methods 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 8
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical compound [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 claims description 7
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 4
- GAGGCOKRLXYWIV-UHFFFAOYSA-N europium(3+);trinitrate Chemical compound [Eu+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O GAGGCOKRLXYWIV-UHFFFAOYSA-N 0.000 claims description 4
- FYDKNKUEBJQCCN-UHFFFAOYSA-N lanthanum(3+);trinitrate Chemical compound [La+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O FYDKNKUEBJQCCN-UHFFFAOYSA-N 0.000 claims description 4
- CFYGEIAZMVFFDE-UHFFFAOYSA-N neodymium(3+);trinitrate Chemical compound [Nd+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CFYGEIAZMVFFDE-UHFFFAOYSA-N 0.000 claims description 4
- YWECOPREQNXXBZ-UHFFFAOYSA-N praseodymium(3+);trinitrate Chemical compound [Pr+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O YWECOPREQNXXBZ-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 1
- 229910052773 Promethium Inorganic materials 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 229910017604 nitric acid Inorganic materials 0.000 claims 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 claims 1
- -1 rare earth nitrate Chemical class 0.000 abstract description 13
- 230000035945 sensitivity Effects 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 description 14
- 238000002955 isolation Methods 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 239000002096 quantum dot Substances 0.000 description 4
- BLVQZLMLJMPOIU-UHFFFAOYSA-N [Pm+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O Chemical compound [Pm+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O BLVQZLMLJMPOIU-UHFFFAOYSA-N 0.000 description 3
- YZDZYSPAJSPJQJ-UHFFFAOYSA-N samarium(3+);trinitrate Chemical compound [Sm+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O YZDZYSPAJSPJQJ-UHFFFAOYSA-N 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021592 Copper(II) chloride Inorganic materials 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
- H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
- H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
- H10F71/1257—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising growth substrates not made of Group II-VI materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
- H10F77/1233—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe characterised by the dopants
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
本发明公开了制备掺杂稀土宽谱带光敏电阻的光敏材料，通过在宽谱带光敏电阻材料CdTe、CdS、CdSe中掺杂质量百分比为1%的稀土硝酸盐，提高宽谱带光敏电阻灵敏度的同时保证其稳定性，同时由于稀土硝酸盐含量低且均为轻稀土硝酸盐，对宽谱带光敏电阻的成本影响较小，具有灵敏度高、废品率低的优点。The invention discloses the preparation of a photosensitive material doped with a rare earth broadband photoresistor, and the sensitivity of the broadband photoresistor is improved by doping rare earth nitrate with a mass percentage of 1% in the broadband photoresistor materials CdTe, CdS, and CdSe At the same time, its stability is guaranteed. At the same time, due to the low content of rare earth nitrates and all of them are light rare earth nitrates, the impact on the cost of the broadband photoresistor is small, and it has the advantages of high sensitivity and low scrap rate.
Description
技术领域technical field
本发明涉及光敏电阻技术领域，具体地，涉及制备掺杂稀土宽谱带光敏电阻的光敏材料。The invention relates to the technical field of photoresistors, in particular to the preparation of photosensitive materials doped with rare earth broadband photoresistors.
背景技术Background technique
能够同时在可见光和近红外光照射条件下工作的宽谱带光敏电阻广泛应用于光电检测控制系统，特别是近红外光检测控制系统，如红外成像，红外感应等。目前，宽谱带光敏电阻通常由附在陶瓷基体表面的光敏材料层电联两个电极组成，光敏电阻材料对宽谱带光敏电阻的性能起决定性作用。宽谱带光敏电阻材料多采用在对可见光敏感的CdS、CdSe、CdCl2混合物中掺杂CdTe量子点，利用CdTe量子点的量子限域效应产生红移特性，把光谱响应谱带扩展到近红外光光谱。但是，现有宽谱带光敏电阻材料主要存在的问题是：灵敏度低。国内外主要通过添加CuCl2材料来提高宽谱带光敏电阻的灵敏度。虽然材料一定程度提高了宽谱带光敏电阻的灵敏度，但引入的CuCl2由于铜离子会在一价和二价之间转化价态，影响了宽谱带光敏电阻的稳定性，导致废品率高，成为进一步提高宽谱带光敏电阻性能的难题。因此需要提供一种灵敏度高、稳定性强的宽谱带光敏电阻及其制备方法，以满足光电检测控制系统对宽谱带光敏电阻灵敏度和稳定性的双项要求。Broad-band photoresistors that can work under the conditions of visible light and near-infrared light at the same time are widely used in photoelectric detection and control systems, especially near-infrared light detection and control systems, such as infrared imaging, infrared sensing, etc. At present, a broadband photoresistor is usually composed of a photosensitive material layer attached to the surface of a ceramic substrate electrically connected to two electrodes, and the photoresistor material plays a decisive role in the performance of the broadband photoresistor. Broad-band photoresistor materials mostly use CdTe quantum dots doped in CdS, CdSe, and CdCl 2 mixtures sensitive to visible light, and use the quantum confinement effect of CdTe quantum dots to produce redshift characteristics, extending the spectral response band to the near-infrared light spectrum. However, the main problem of existing broadband photoresistive materials is low sensitivity. At home and abroad, the sensitivity of broadband photoresistors is mainly improved by adding CuCl2 materials. Although the material improves the sensitivity of the broadband photoresistor to a certain extent, the introduction of CuCl 2 will affect the stability of the broadband photoresistor due to the conversion of copper ions between the first valence and the second valence, resulting in a high scrap rate , has become a difficult problem to further improve the performance of broadband photoresistors. Therefore, it is necessary to provide a broadband photoresistor with high sensitivity and strong stability and a preparation method thereof, so as to meet the dual requirements of the photoelectric detection control system on the sensitivity and stability of the broadband photoresistor.
发明内容Contents of the invention
本发明的目的在于，针对上述问题，提出制备宽谱带光敏电阻的光敏材料及该光敏电阻的制备方法，以满足光电检测控制系统对宽谱带光敏电阻灵敏度和稳定性的双项要求。The object of the present invention is to address the above problems, propose a photosensitive material for preparing a broadband photoresistor and a preparation method of the photoresistor, so as to meet the dual requirements of the photoelectric detection control system for sensitivity and stability of the broadband photoresistor.
为实现上述目的，本发明采用的技术方案是：制备宽谱带光敏电阻的光敏材料及该光敏电阻的制备方法，In order to achieve the above object, the technical scheme adopted in the present invention is: prepare the photosensitive material of broadband photoresistor and the preparation method of this photoresistor,
所述光敏材料由稀土掺杂宽谱带光敏溶液喷涂在光敏电阻的陶瓷基体的表面形成，所述稀土掺杂宽谱带光敏溶液包括混合物和离子水，所述混合物由以下重量百分比的各组分组成：The photosensitive material is formed by spraying a rare earth-doped broadband photosensitive solution on the surface of the ceramic substrate of the photoresistor. The rare earth-doped broadband photosensitive solution includes a mixture and ionized water, and the mixture consists of the following weight percentages: grouped into:
CdTe 37%-57%，CdCl 17%-37%，CdSe 15%-35%，余量为稀土硝酸盐；CdTe 37%-57%, CdCl 17%-37%, CdSe 15%-35%, and the balance is rare earth nitrate;
将混合物溶解在离子水中得到稀土掺杂宽谱带光敏溶液，所述光敏溶液中混合物与离子水的质量百分比为，混合物25%-45%，离子水55%-75%。The mixture is dissolved in ionized water to obtain a rare earth-doped broadband photosensitive solution, and the mass percentages of the mixture and the ionized water in the photosensitive solution are 25%-45% of the mixture and 55%-75% of the ionized water.
进一步地，所述稀土硝酸盐为硝酸镧、硝酸铈、硝酸镨、硝酸钕、硝酸钷、硝酸钐或硝酸铕中的任一种。Further, the rare earth nitrate is any one of lanthanum nitrate, cerium nitrate, praseodymium nitrate, neodymium nitrate, promethium nitrate, samarium nitrate or europium nitrate.
进一步地，further,
所述混合物各组分的重量百分比CdTe 47%，CdCl 27%，CdSe 25%，稀土硝酸盐1%；The weight percentage of each component of the mixture is CdTe 47%, CdCl 27%, CdSe 25%, rare earth nitrate 1%;
所述稀土掺杂宽谱带光敏溶液中混合物与离子水的质量百分比为，混合物35%，离子水65%。The mass percent of the mixture and the ionized water in the rare earth-doped broadband photosensitive solution is 35% of the mixture and 65% of the ionized water.
掺杂稀土宽谱带光敏电阻的制备方法，包括以下步骤：The preparation method of doped rare earth broadband photoresistor comprises the following steps:
步骤1：制备陶瓷基体；Step 1: preparing a ceramic substrate;
步骤2：配置稀土掺杂宽谱带光敏溶液；Step 2: Configure rare earth doped broadband photosensitive solution;
步骤3：将稀土掺杂宽谱带光敏溶液喷涂在陶瓷基体的表面，形成稀土掺杂宽谱带光敏材料层；Step 3: Spraying the rare earth-doped broadband photosensitive solution on the surface of the ceramic substrate to form a rare earth-doped broadband photosensitive material layer;
步骤4：将步骤3喷涂后的陶瓷基体静置10-30分钟后，放入900℃-1100℃恒温烘箱中烘烤10-30分钟；Step 4: After the ceramic substrate sprayed in step 3 is left to stand for 10-30 minutes, put it into a constant temperature oven at 900°C-1100°C and bake for 10-30 minutes;
步骤5：将两个电极安装在步骤4形成的稀土掺杂宽谱带光敏材料层两端，得到光敏电阻主体；Step 5: installing two electrodes on both ends of the rare earth-doped broadband photosensitive material layer formed in step 4 to obtain the main body of the photoresistor;
步骤6：在光敏电阻主体表面喷涂隔离层，得到光敏电阻。Step 6: Spray an isolation layer on the surface of the main body of the photoresistor to obtain a photoresistor.
进一步地，所述稀土掺杂宽谱带光敏溶液包括混合物和离子水，所述混合物由以下重量百分比的各组分组成：Further, the rare earth-doped broadband photosensitive solution includes a mixture and ionized water, and the mixture is composed of the following components in weight percentage:
CdTe 37%-57%，CdCl 17%-37%，CdSe 15%-35%，余量为稀土硝酸盐；CdTe 37%-57%, CdCl 17%-37%, CdSe 15%-35%, and the balance is rare earth nitrate;
将混合物溶解在离子水中得到稀土掺杂宽谱带光敏溶液，所述光敏溶液中混合物与离子水的质量百分比为，混合物25%-45%，离子水55%-75%。The mixture is dissolved in ionized water to obtain a rare earth-doped broadband photosensitive solution, and the mass percentages of the mixture and the ionized water in the photosensitive solution are 25%-45% of the mixture and 55%-75% of the ionized water.
进一步地，所述步骤4具体为，将步骤3喷涂后的陶瓷基体静置20分钟后，放入1000℃恒温烘箱中烘烤20分钟。Further, the step 4 is specifically, after the ceramic substrate sprayed in the step 3 is left to stand for 20 minutes, it is baked in a constant temperature oven at 1000° C. for 20 minutes.
进一步地，所述陶瓷基体由纯度为90%以上的三氧化二铝材料制成。Further, the ceramic substrate is made of Al2O3 with a purity of more than 90%.
进一步地，步骤3具体为，将步骤S2所得的稀土掺杂宽谱带光敏溶液喷涂在陶瓷基体表面，喷涂5次，所述低成本宽谱带光敏材料层厚度为4微米。Further, step 3 specifically includes spraying the rare earth-doped broadband photosensitive solution obtained in step S2 on the surface of the ceramic substrate for 5 times, and the thickness of the low-cost broadband photosensitive material layer is 4 microns.
进一步地，步骤6具体为，利用环氧树脂在光敏电阻主体表面，形成隔离层，所述隔离层厚度为4微米。Further, step 6 specifically includes forming an isolation layer on the surface of the main body of the photoresistor with epoxy resin, and the thickness of the isolation layer is 4 microns.
进一步地， 所述混合物各组分的重量百分比CdTe 47%，CdCl 27%，CdSe 25%，稀土硝酸盐1%；Further, the weight percentage of each component of the mixture is 47% CdTe, 27% CdCl, 25% CdSe, and 1% rare earth nitrate;
所述稀土掺杂宽谱带光敏溶液中混合物与离子水的质量百分比为，混合物35%，离子水65%。The mass percent of the mixture and the ionized water in the rare earth-doped broadband photosensitive solution is 35% of the mixture and 65% of the ionized water.
本发明各实施例的用于制备掺杂稀土宽谱带光敏电阻的光敏材料及该光敏电阻的制备方法，通过在宽谱带光敏电阻材料CdTe、CdS、CdSe中掺杂质量百分比为1%的稀土硝酸盐，提高宽谱带光敏电阻灵敏度的同时保证其稳定性，同时由于稀土硝酸盐含量低且均为轻稀土硝酸盐，对宽谱带光敏电阻的成本影响较小，具有灵敏度高、废品率低的优点。In each embodiment of the present invention, the photosensitive material used to prepare the doped rare earth broadband photoresistor and the preparation method of the photoresistor are prepared by doping the broadband photoresistor materials CdTe, CdS, and CdSe with a mass percentage of 1%. Rare earth nitrates improve the sensitivity of broadband photoresistors while ensuring their stability. At the same time, because the content of rare earth nitrates is low and they are all light rare earth nitrates, the cost impact on broadband photoresistors is small, and it has high sensitivity and waste products. The advantage of low rates.
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention.
下面通过附图和实施例，对本发明的技术方案做进一步的详细描述。The technical solutions of the present invention will be described in further detail below with reference to the accompanying drawings and embodiments.
附图说明Description of drawings
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，与本发明的实施例一起用于解释本发明，并不构成对本发明的限制。在附图中：The accompanying drawings are used to provide a further understanding of the present invention, and constitute a part of the description, and are used together with the embodiments of the present invention to explain the present invention, and do not constitute a limitation to the present invention. In the attached picture:
图1为本发明实施例所述的光敏电阻结构图。FIG. 1 is a structural diagram of a photoresistor according to an embodiment of the present invention.
结合附图，本发明实施例中附图标记如下：In conjunction with the accompanying drawings, the reference signs in the embodiments of the present invention are as follows:
1-陶瓷基体；2-光敏材料层；3-电极。1-ceramic substrate; 2-photosensitive material layer; 3-electrode.
具体实施方式detailed description
以下结合附图对本发明的优选实施例进行说明，应当理解，此处所描述的优选实施例仅用于说明和解释本发明，并不用于限定本发明。The preferred embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.
结合图1的结构，具体地，制备掺杂稀土宽谱带光敏电阻的光敏材料，所述光敏材料由稀土掺杂宽谱带光敏溶液喷涂在光敏电阻的陶瓷基体的表面形成，所述稀土掺杂宽谱带光敏溶液包括混合物和离子水，所述混合物由以下重量百分比的各组分组成：In combination with the structure in Figure 1, specifically, a photosensitive material doped with a rare earth broadband photoresistor is prepared, and the photosensitive material is formed by spraying a rare earth doped broadband photosensitive solution on the surface of the ceramic substrate of the photoresistor. The heterobroadband photosensitive solution includes a mixture and ionized water, and the mixture is composed of the following components in weight percentage:
CdTe 37%-57%，CdCl 17%-37%，CdSe 15%-35%，余量为稀土硝酸盐；CdTe 37%-57%, CdCl 17%-37%, CdSe 15%-35%, and the balance is rare earth nitrate;
将混合物溶解在离子水中得到稀土掺杂宽谱带光敏溶液，所述光敏溶液中混合物与离子水的质量百分比为，混合物25%-45%，离子水55%-75%。The mixture is dissolved in ionized water to obtain a rare earth-doped broadband photosensitive solution, and the mass percentages of the mixture and the ionized water in the photosensitive solution are 25%-45% of the mixture and 55%-75% of the ionized water.
所述稀土硝酸盐为硝酸镧、硝酸铈、硝酸镨、硝酸钕、硝酸钷、硝酸钐或硝酸铕中的任一种。The rare earth nitrate is any one of lanthanum nitrate, cerium nitrate, praseodymium nitrate, neodymium nitrate, promethium nitrate, samarium nitrate or europium nitrate.
所述混合物各组分的重量百分比CdTe 47%，CdCl 27%，CdSe 25%，稀土硝酸盐1%；The weight percentage of each component of the mixture is CdTe 47%, CdCl 27%, CdSe 25%, rare earth nitrate 1%;
所述稀土掺杂宽谱带光敏溶液中混合物与离子水的质量百分比为，混合物35%，离子水65%。The mass percent of the mixture and the ionized water in the rare earth-doped broadband photosensitive solution is 35% of the mixture and 65% of the ionized water.
所述方法包括以下操作步骤：The method comprises the following steps:
S1，制备陶瓷基体；S1, preparing a ceramic matrix;
S2，配置稀土掺杂宽谱带光敏溶液；S2, configuring a rare earth-doped broadband photosensitive solution;
S3，将稀土掺杂宽谱带光敏溶液喷涂在陶瓷基体的表面，形成稀土掺杂宽谱带光敏材料层；S3, spraying the rare earth-doped broadband photosensitive solution on the surface of the ceramic substrate to form a rare earth-doped broadband photosensitive material layer;
S4，将喷涂后的陶瓷基体静置20分钟后，放入1000℃恒温烘箱中烘烤20分钟；S4, after the sprayed ceramic substrate is left to stand for 20 minutes, put it into a 1000°C constant temperature oven and bake for 20 minutes;
S5，将两个电极安装在形成稀土掺杂宽谱带光敏材料层两端，得到稀土掺杂宽谱带光敏电阻主体。S5, installing two electrodes on both ends of the rare earth-doped broadband photosensitive material layer to obtain a rare earth-doped broadband photoresistor body.
S6，在稀土掺杂宽谱带电阻主体表面喷涂隔离层，得到稀土掺杂宽谱带光敏电阻。S6, spraying an isolation layer on the surface of the main body of the rare earth doped broadband resistor to obtain a rare earth doped broadband photoresistor.
优选地，所述步骤S1具体为：用纯度为90%以上的三氧化二铝材料制备所需形状的陶瓷基体。Preferably, the step S1 specifically includes: preparing a ceramic substrate of a desired shape with an aluminum oxide material with a purity of more than 90%.
优选地，所述步骤S2具体为：Preferably, the step S2 is specifically:
首先，按照以下配比配置红外光光敏溶液并将各原料混合均匀后得到红外光光敏材料层混合物：First, configure the infrared photosensitive solution according to the following ratio and mix the raw materials evenly to obtain the infrared photosensitive material layer mixture:
CdTe 47%（重量百分比）CdTe 47% (weight percent)
CdCl 27%（重量百分比）CdCl 27% (weight percent)
CdSe 25%（重量百分比）CdSe 25% (weight percent)
稀土硝酸盐 1%（重量百分比）Rare earth nitrate 1% (weight percent)
所述的稀土硝酸盐为硝酸镧、硝酸铈、硝酸镨、硝酸钕、硝酸钷、硝酸钐和硝酸铕中的一种。The rare earth nitrate is one of lanthanum nitrate, cerium nitrate, praseodymium nitrate, neodymium nitrate, promethium nitrate, samarium nitrate and europium nitrate.
然后，将稀土掺杂宽谱带光敏材料层混合物溶解在离子水中得到稀土掺杂宽谱带光敏材料溶液，其中稀土掺杂宽谱带光敏材料溶液中，稀土掺杂宽谱带光敏材料层混合物的质量百分比为35%，离子水的质量百分比为65%。Then, dissolving the rare earth doped broadband photosensitive material layer mixture in ionized water to obtain a rare earth doped broadband photosensitive material solution, wherein in the rare earth doped broadband photosensitive material solution, the rare earth doped broadband photosensitive material layer mixture The mass percentage of ionic water is 35%, and the mass percentage of ionized water is 65%.
优选地，所述步骤S3具体为：将步骤S2所得的稀土掺杂宽谱带光敏材料溶液喷涂在陶瓷基体表面，喷涂5次，所述稀土掺杂宽谱带光敏材料层厚度为4微米。Preferably, the step S3 specifically includes: spraying the rare earth-doped broadband photosensitive material solution obtained in step S2 on the surface of the ceramic substrate for 5 times, and the thickness of the rare earth-doped broadband photosensitive material layer is 4 microns.
优选地，所述步骤S6具体为：将环氧树脂在步骤S2所得的稀土掺杂宽谱带光敏电阻主体表面，形成隔离层，所述隔离层厚度为4微米。Preferably, the step S6 specifically includes: doping the surface of the main body of the wide-band photoresistor with rare earth doped with epoxy resin obtained in the step S2 to form an isolation layer, and the thickness of the isolation layer is 4 microns.
在上述取值范围内取值时，利用上述给出的百分比制备的电阻灵敏度是最优的。而范围内的其他数值（包括端点值）的灵敏度仅次于上述公开的具体数值。When the value is taken within the above range of values, the resistance sensitivity prepared by using the percentage given above is optimal. Other values in the range (including endpoints) are less sensitive than the specific values disclosed above.
实际应用表明：Practical applications show that:
本发明提供的一种稀土掺杂的宽光谱光敏材料及其制备方法，通过向现有的对可见光敏感的光敏材料CdSe、CdCl2和CuCl2混合物中掺杂CdTe量子点，利用CdTe量子点的量子限域效应产生红移特性，把光谱响应谱带扩展到近红外光光谱。所制备宽光谱光敏电阻对波长在450nm到900 nm之间的光敏感，具有光谱响应谱带宽的优点。The present invention provides a rare earth-doped wide-spectrum photosensitive material and a preparation method thereof. By doping CdTe quantum dots into the existing photosensitive material CdSe, CdCl 2 and CuCl 2 mixtures sensitive to visible light, the CdTe quantum dots are utilized The quantum confinement effect produces a redshift characteristic that extends the spectral response band to the near-infrared light spectrum. The prepared wide-spectrum photoresistor is sensitive to light with a wavelength between 450 nm and 900 nm, and has the advantage of spectral response spectrum bandwidth.
最后应说明的是：以上所述仅为本发明的优选实施例而已，并不用于限制本发明，尽管参照前述实施例对本发明进行了详细的说明，对于本领域的技术人员来说，其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。Finally, it should be noted that: the above is only a preferred embodiment of the present invention, and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, for those skilled in the art, it still The technical solutions recorded in the foregoing embodiments may be modified, or some technical features thereof may be equivalently replaced. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.
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| CN101186824A (en) * | 2007-11-09 | 2008-05-28 | 南开大学 | Aqueous layer-by-layer assembly method for near-infrared fluorescent CdTe/CdSe core-shell quantum dots |
| CN105206700A (en) * | 2015-10-09 | 2015-12-30 | 南阳师范学院 | Visible light photosensitive resistor and manufacturing method thereof |
| CN105336798A (en) * | 2015-10-09 | 2016-02-17 | 南阳师范学院 | Photoresistor and manufacturing method thereof |
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| CN101186824A (en) * | 2007-11-09 | 2008-05-28 | 南开大学 | Aqueous layer-by-layer assembly method for near-infrared fluorescent CdTe/CdSe core-shell quantum dots |
| CN105206700A (en) * | 2015-10-09 | 2015-12-30 | 南阳师范学院 | Visible light photosensitive resistor and manufacturing method thereof |
| CN105336798A (en) * | 2015-10-09 | 2016-02-17 | 南阳师范学院 | Photoresistor and manufacturing method thereof |
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