CN106671301A - Method for cutting off silicon blocks after squaring - Google Patents
Method for cutting off silicon blocks after squaring Download PDFInfo
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- CN106671301A CN106671301A CN201611115923.7A CN201611115923A CN106671301A CN 106671301 A CN106671301 A CN 106671301A CN 201611115923 A CN201611115923 A CN 201611115923A CN 106671301 A CN106671301 A CN 106671301A
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- B28—WORKING CEMENT, CLAY, OR STONE
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- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
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- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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Abstract
本发明的目的是一种开方后硅块的截断方法，该硅块的截断方法包括以下步骤：(1)硅块的选取，(2)硅块顶部截断加工，将硅块的顶部以少子寿命为0.5μs画线，且将少子寿命画线一下的硅块通过切刀切除，(3)硅块底部截断加工，(4)将顶部和底部切割完成后的硅块集中收集，且进行密封真空装袋，提高切割的效率，提高切割的长度的均一，同时能够提高截断面表面的光滑性，避免切断面出现气泡和裂痕，提高硅块的质量。The object of the present invention is a method for truncation of a silicon block after square extraction, the method for truncation of the silicon block comprises the following steps: (1) selection of the silicon block, (2) truncation processing of the top of the silicon block, and the top of the silicon block is processed with a minority Draw a line with a lifetime of 0.5μs, and cut off the silicon block with a minority carrier lifetime below the line by a cutter, (3) cut off the bottom of the silicon block, (4) collect the silicon block after cutting the top and bottom, and seal it Vacuum bagging improves the cutting efficiency and the uniformity of the cutting length. At the same time, it can improve the smoothness of the cut surface, avoid bubbles and cracks on the cut surface, and improve the quality of the silicon block.
Description
技术领域technical field
本发明涉及到硅材料技术领域，特别是指对硅料的截断切割方面的应用，尤其涉及到一种开方后硅块的截断方法。The invention relates to the technical field of silicon materials, in particular to the application in the cutting and cutting of silicon materials, and in particular to a method for cutting silicon blocks after square cutting.
背景技术Background technique
随着我国经济的发展，能源的利用和发展进入到了新的革新时代，太阳能发电成为新的能源技术，太阳能发电包括光热发电和光伏发电，但是这种新型的太阳能发电需要的关键是太阳能电池，利用太阳能电池进行能量的转换和储存，这就需要大量的硅电池板，同时电池板中硅的切割要求相对较高，在以往的切割时往往会因为切割的方法和技术的不足，导致在切割时在切割表面出现气泡和裂痕，同时由于方法的不对，会出现切割的尺寸不一，降低后续加工的效率，影切割后硅块表面的光滑度和性能要求。With the development of my country's economy, the utilization and development of energy has entered a new era of innovation. Solar power generation has become a new energy technology. Solar power generation includes photothermal power generation and photovoltaic power generation, but the key to this new type of solar power generation is solar cells. , using solar cells for energy conversion and storage, which requires a large number of silicon panels, and the requirements for cutting silicon in the panels are relatively high. In the past, cutting methods and techniques were often insufficient, resulting in Bubbles and cracks appear on the cutting surface during cutting. At the same time, due to the wrong method, the cutting size will be different, which will reduce the efficiency of subsequent processing and affect the smoothness and performance requirements of the silicon block surface after cutting.
因此，提供一种开方后硅块的截断方法，以期能够通过对开方后的硅块的截断和切割方法进行改进和优化，提高切割的效率，提高切割的长度的均一，同时能够提高截断面表面的光滑性，避免切断面出现气泡和裂痕，提高硅块的质量，以更好的适应硅块的切割性能要求，就成为本领域技术人员亟需解决的问题。Therefore, a method for truncation of a silicon block after squaring is provided, in order to improve and optimize the truncation and cutting method of a silicon block after squaring, improve the efficiency of cutting, improve the uniformity of the length of cutting, and simultaneously improve the truncation The smoothness of the surface, avoiding bubbles and cracks on the cut surface, improving the quality of the silicon block, and better adapting to the cutting performance requirements of the silicon block have become problems that those skilled in the art need to solve urgently.
发明内容Contents of the invention
本发明的目的是提供一种开方后硅块的截断方法，以期能够通过对开方后的硅块的截断和切割方法进行改进和优化，提高切割的效率，提高切割的长度的均一，同时能够提高截断面表面的光滑性，避免切断面出现气泡和裂痕，提高硅块的质量，以更好的适应硅块的切割性能要求。The object of the present invention is to provide a method for truncation of silicon block after squaring, in order to improve and optimize the truncation and cutting method of silicon block after squaring, improve the efficiency of cutting, improve the uniformity of the length of cutting, and at the same time It can improve the smoothness of the section surface, avoid bubbles and cracks on the section surface, improve the quality of the silicon block, and better meet the cutting performance requirements of the silicon block.
为解决背景技术中所述技术问题，本发明采用以下技术方案：In order to solve the technical problems described in the background technology, the present invention adopts the following technical solutions:
一种开方后硅块的截断方法，该硅块的截断方法包括以下步骤：A method for truncation of a silicon block after square extraction, the method for truncation of the silicon block comprises the following steps:
(1)硅块的选取，挑选检测完成后，且达到合格标准的硅块，然后对表面进行清洗，以备后续加工。(1) Selection of silicon blocks: After the inspection is completed, the silicon blocks that meet the qualified standards are selected, and then the surface is cleaned for subsequent processing.
(2)硅块顶部截断加工，将准备好的硅块的顶部以少子寿命为0.5μs画线，然后将少子寿命画线一下的硅块通过切刀切除，并且获得顶皮料。(2) Cut off the top of the silicon block, draw a line on the top of the prepared silicon block with a minority carrier lifetime of 0.5 μs, and then cut off the silicon block with a minority carrier lifetime of less than 0.5 μs, and obtain the top skin material.
(3)硅块底部截断加工，将步骤2中切除顶部的硅块的底部以少子寿命为0.5μs画线，然后将少子寿命画线意以外的切除，然后获得切除的底料。(3) Cut off the bottom of the silicon block, draw a line at the bottom of the silicon block whose top was cut off in step 2 with a minority carrier lifetime of 0.5 μs, and then cut off the minority carrier lifetime drawing line unexpectedly, and then obtain the cut bottom material.
(4)将顶部和底部切割完成后的硅块集中收集，且进行密封真空装袋。(4) Collect the silicon blocks after top and bottom cutting, and carry out sealed vacuum bagging.
优选地，所述的步骤2中硅块顶部截断加工时的画线还可以通过杂质最低点画线，通过这种画线划界能够进一步提高截断切割的精度，提高切割时端面的整齐度。Preferably, the line drawn during the truncation processing of the top of the silicon block in step 2 can also be drawn through the lowest point of impurities, and the demarcation by such line drawing can further improve the accuracy of truncation and cutting, and improve the uniformity of the end surface during cutting.
优选地，所述的步骤2和步骤3中对硅块进行切割时，切割后的合格部分表面无气孔，若表面存在气孔，在进一步切除，直至表面无气孔，在截断切割时对截面进行精细切割，避免切割截面出现气泡和裂和，提高切割截面的光滑度。Preferably, when the silicon block is cut in step 2 and step 3, the qualified part after cutting has no pores on the surface. If there are pores on the surface, it is further cut until there is no pores on the surface, and the section is finely cut when cutting. Cutting, avoiding bubbles and cracks in the cutting section, and improving the smoothness of the cutting section.
优选地，所述的步骤2和步骤3中对硅块进行切割时，每块硅块需要沿顶部及底部合格线上带锯共切两刀，通过两刀切割能够提高切割表面的光滑程度。Preferably, when the silicon block is cut in step 2 and step 3, each silicon block needs to be cut twice with a band saw along the top and bottom qualified lines, and the smoothness of the cutting surface can be improved by cutting with two cuts.
优选地，所述的步骤3中的硅块底部截断加工时，对硅料底部少子寿命的画线高度＜15mm。Preferably, when the bottom of the silicon block is truncated in step 3, the height of the line drawn for the minority carrier lifetime at the bottom of the silicon material is less than 15mm.
本发明的有益效果是：The beneficial effects of the present invention are:
1)、提高切割的效率，提高切割的长度的均一。1) Improve the efficiency of cutting and improve the uniformity of cutting length.
2)、同时能够提高截断面表面的光滑性，避免切断面出现气泡和裂痕，提高硅块的质量。2) At the same time, it can improve the smoothness of the cut-off surface, avoid bubbles and cracks on the cut-off surface, and improve the quality of the silicon block.
具体实施方式detailed description
为了使本领域的技术人员更好地理解本发明的技术方案，下面将对本发明作进一步的详细介绍。In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention will be further described in detail below.
一种开方后硅块的截断方法，该硅块的截断方法包括以下步骤：A method for truncation of a silicon block after square extraction, the method for truncation of the silicon block comprises the following steps:
(1)硅块的选取，挑选检测完成后，且达到合格标准的硅块，然后对表面进行清洗，以备后续加工。(1) Selection of silicon blocks: After the inspection is completed, the silicon blocks that meet the qualified standards are selected, and then the surface is cleaned for subsequent processing.
(2)硅块顶部截断加工，将准备好的硅块的顶部以少子寿命为0.5μs画线，然后将少子寿命画线一下的硅块通过切刀切除，并且获得顶皮料。(2) Cut off the top of the silicon block, draw a line on the top of the prepared silicon block with a minority carrier lifetime of 0.5 μs, and then cut off the silicon block with a minority carrier lifetime of less than 0.5 μs, and obtain the top skin material.
(3)硅块底部截断加工，将步骤2中切除顶部的硅块的底部以少子寿命为0.5μs画线，然后将少子寿命画线意以外的切除，然后获得切除的底料。(3) Cut off the bottom of the silicon block, draw a line at the bottom of the silicon block whose top was cut off in step 2 with a minority carrier lifetime of 0.5 μs, and then cut off the minority carrier lifetime drawing line unexpectedly, and then obtain the cut bottom material.
(4)将顶部和底部切割完成后的硅块集中收集，且进行密封真空装袋。(4) Collect the silicon blocks after top and bottom cutting, and carry out sealed vacuum bagging.
进一步的，所述的步骤2中硅块顶部截断加工时的画线还可以通过杂质最低点画线，通过这种画线划界能够进一步提高截断切割的精度，提高切割时端面的整齐度。Further, the line drawn during the truncation process on the top of the silicon block in step 2 can also be drawn through the lowest point of impurities, and the demarcation by such line drawing can further improve the precision of truncation and cutting, and improve the uniformity of the end surface during cutting.
进一步的，所述的步骤2和步骤3中对硅块进行切割时，切割后的合格部分表面无气孔，若表面存在气孔，在进一步切除，直至表面无气孔，在截断切割时对截面进行精细切割，避免切割截面出现气泡和裂和，提高切割截面的光滑度。Further, when the silicon block is cut in step 2 and step 3, the qualified part after cutting has no pores on the surface. If there are pores on the surface, it is further cut until the surface has no pores, and the section is finely cut when cutting. Cutting, avoiding bubbles and cracks in the cutting section, and improving the smoothness of the cutting section.
进一步的，所述的步骤2和步骤3中对硅块进行切割时，每块硅块需要沿顶部及底部合格线上带锯共切两刀，通过两刀切割能够提高切割表面的光滑程度。Further, when the silicon block is cut in step 2 and step 3, each silicon block needs to be cut twice with a band saw along the top and bottom qualified lines, and the smoothness of the cutting surface can be improved by cutting with two cuts.
进一步的，所述的步骤3中的硅块底部截断加工时，对硅料底部少子寿命的画线高度＜15mm。Further, when the bottom of the silicon block is cut off in step 3, the height of the line drawn for the minority carrier lifetime at the bottom of the silicon material is less than 15mm.
以上只通过说明的方式描述了本发明的某些示范性实施例，毋庸置疑，对于本领域的普通技术人员，在不偏离本发明的精神和范围的情况下，可以用各种不同的方式对所描述的实施例进行修正。因此，上述描述在本质上是说明性的，不应理解为对本发明权利要求保护范围的限制。Certain exemplary embodiments of the present invention have been described above only by way of illustration, and it goes without saying that those skilled in the art can use various methods without departing from the spirit and scope of the present invention. The described embodiments are modified. Therefore, the above description is illustrative in nature and should not be construed as limiting the protection scope of the claims of the present invention.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109760219A (en) * | 2019-03-12 | 2019-05-17 | 赛维Ldk太阳能高科技(新余)有限公司 | A kind of silico briquette head-tail minimizing technology and removal device |
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| JP5938113B1 (en) * | 2015-01-05 | 2016-06-22 | 信越化学工業株式会社 | Manufacturing method of substrate for solar cell |
| CN105784436A (en) * | 2014-12-23 | 2016-07-20 | 浙江昱辉阳光能源有限公司 | Detection method for minority carrier lifetime of silicon briquette |
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- 2016-12-07 CN CN201611115923.7A patent/CN106671301A/en active Pending
Patent Citations (4)
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| US20120181452A1 (en) * | 2009-07-20 | 2012-07-19 | Bt Imaging Pty Ltd. | Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials |
| CN101973072A (en) * | 2010-07-28 | 2011-02-16 | 常州天合光能有限公司 | Method for manufacturing silicon rod for slicing by processing polycrystalline silicon ingot |
| CN105784436A (en) * | 2014-12-23 | 2016-07-20 | 浙江昱辉阳光能源有限公司 | Detection method for minority carrier lifetime of silicon briquette |
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