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CN106601700A - Intelligent power module, preparation method of intelligent power module and power electronic device - Google Patents

Intelligent power module, preparation method of intelligent power module and power electronic device Download PDF

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Publication number
CN106601700A
CN106601700A CN201611263260.3A CN201611263260A CN106601700A CN 106601700 A CN106601700 A CN 106601700A CN 201611263260 A CN201611263260 A CN 201611263260A CN 106601700 A CN106601700 A CN 106601700A
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power module
intelligent power
circuit wiring
components
circuit
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冯宇翔
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GD Midea Air Conditioning Equipment Co Ltd
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Guangdong Midea Refrigeration Equipment Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4882—Assembly of heatsink parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4885—Wire-like parts or pins
    • H01L21/4889—Connection or disconnection of other leads to or from wire-like parts, e.g. wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

本发明提供了一种智能功率模块、智能模块的制备方法及电力电子设备，其中，智能功率模块包括：电路基板，所述电路基板的上表面设置有电路布线；多个器件引脚，所述器件引脚与所述电路布线电连接；多个元器件，所述多个元器件倒装在所述电路布线上；封装外壳，至少完全包覆所述电路基板的上表面、所述电路布线和所述多个元器件，其中，所述封装外壳在所述多个元器件中的功率器件位置处形成有凹槽，所述器件引脚自所述封装外壳的内侧向外侧伸出；散热组件，设置在所述凹槽中，所述散热组件用于对所述功率器件进行散热。

The invention provides an intelligent power module, a preparation method of the intelligent module, and power electronic equipment, wherein the intelligent power module includes: a circuit substrate, the upper surface of which is provided with circuit wiring; a plurality of device pins, the The device pins are electrically connected to the circuit wiring; a plurality of components, the multiple components are flipped on the circuit wiring; the package shell at least completely covers the upper surface of the circuit substrate, the circuit wiring and the plurality of components, wherein the packaging shell is formed with grooves at the positions of the power devices in the multiple components, and the device pins protrude from the inside to the outside of the packaging shell; heat dissipation A component is arranged in the groove, and the heat dissipation component is used to dissipate heat from the power device.

Description

智能功率模块、智能功率模块的制备方法及电力电子设备Intelligent power module, preparation method of intelligent power module and power electronic equipment

技术领域technical field

本发明涉及智能功率模块技术领域，具体而言，涉及一种智能功率模块、一种智能功率模块的制备方法和一种电力电子设备。The invention relates to the technical field of intelligent power modules, in particular, to an intelligent power module, a preparation method of the intelligent power module and a power electronic device.

背景技术Background technique

智能功率模块，即IPM(Intelligent Power Module)，是一种将电力电子和集成电路技术结合的功率驱动类产品。智能功率模块把功率开关器件和高压驱动电路集成在一起，并内藏有过电压、过电流和过热等故障检测电路。智能功率模块一方面接收MCU(Microcontroller Unit微控制器)的控制信号，驱动后续电路工作，另一方面将系统的状态检测信号送回MCU。与传统分立方案相比，智能功率模块以其高集成度、高可靠性等优势赢得越来越大的市场，尤其适合于驱动电机的变频器及各种逆变电源，是变频调速，冶金机械，电力牵引，伺服驱动，变频家电的一种理想电力电子器件。Intelligent Power Module, or IPM (Intelligent Power Module), is a power drive product that combines power electronics and integrated circuit technology. The intelligent power module integrates the power switching device and the high-voltage driving circuit, and has built-in fault detection circuits such as overvoltage, overcurrent and overheating. On the one hand, the intelligent power module receives the control signal from the MCU (Microcontroller Unit microcontroller) to drive the subsequent circuit to work, and on the other hand, it sends the system status detection signal back to the MCU. Compared with traditional discrete solutions, intelligent power modules have won an increasing market due to their advantages of high integration and high reliability. They are especially suitable for inverters and various inverter power supplies for driving motors. An ideal power electronic device for machinery, electric traction, servo drives, and frequency conversion appliances.

图1A是所述智能功率模块100的俯视图。FIG. 1A is a top view of the smart power module 100 .

图1B是图1A的X-X’线剖面图。Fig. 1B is a sectional view taken along line X-X' of Fig. 1A.

图1C是图1A中引脚的连接的示意图。FIG. 1C is a schematic diagram of the connections of the pins in FIG. 1A.

下面参照图1A、图1B和图1C说明现有智能功率模块100的结构。The structure of the conventional intelligent power module 100 will be described below with reference to FIG. 1A , FIG. 1B and FIG. 1C .

上述智能功率模块100具有如下结构，其包括：电路基板106；设于电路基板106表面上的绝缘层107上形成的电路布线108；被固定在电路布线108上的电路元件104；连接电路元件104和电路布线108的金属线105；与电路布线108连接的引脚101，所述引脚101边缘存在未电镀的缺口103，其余部分被电镀层覆盖；所述智能功率模块100的整体被密封树脂102密封。另外，有时也在使所述铝基板106的背面露出到外部的状态下进行密封。The above-mentioned intelligent power module 100 has the following structure, which includes: a circuit substrate 106; circuit wiring 108 formed on the insulating layer 107 on the surface of the circuit substrate 106; circuit elements 104 fixed on the circuit wiring 108; connecting circuit elements 104 and the metal wire 105 of the circuit wiring 108; the pin 101 connected to the circuit wiring 108, there is an unplated gap 103 on the edge of the pin 101, and the rest is covered by the electroplating layer; the whole of the intelligent power module 100 is covered by sealing resin 102 sealed. In addition, sealing may be performed in a state in which the back surface of the aluminum substrate 106 is exposed to the outside.

所述智能功率模块100的制造方法是：The manufacturing method of the intelligent power module 100 is:

将铝材形成适当大小作为所述电路基板106，在所述电路基板106表面上设置所述绝缘层107并在所述绝缘层107上形成铜箔，通过刻蚀使铜箔形成所述电路布线108；Aluminum material is formed into an appropriate size as the circuit substrate 106, the insulating layer 107 is arranged on the surface of the circuit substrate 106, and copper foil is formed on the insulating layer 107, and the copper foil is formed into the circuit wiring by etching 108;

在所述电路布线108的特定位置涂装锡膏；Coating solder paste at a specific position of the circuit wiring 108;

将铜材形成适当形状，并进行表面镀层处理，作为所述引脚101，为了避免所述电路元件104在后续加工工序中被静电损伤，如图1C所示，所述引脚101的特定位置通过加强筋109相连；Form the copper material into an appropriate shape, and carry out surface plating treatment, as the pin 101, in order to prevent the circuit element 104 from being damaged by static electricity in the subsequent processing procedure, as shown in Figure 1C, the specific position of the pin 101 Connected by reinforcing ribs 109;

在锡膏上放置所述电路元件104和所述引脚101；placing the circuit element 104 and the pin 101 on the solder paste;

通过回流焊使锡膏固化，所述电路元件104和所述引脚101固定在所述电路布线108上；The solder paste is solidified by reflow soldering, and the circuit element 104 and the pin 101 are fixed on the circuit wiring 108;

通过喷淋、超声等清洗方式，清除残留在所述电路基板106上的助焊剂；Removing the flux remaining on the circuit substrate 106 by spraying, ultrasonic cleaning or other cleaning methods;

通过邦定线，使所述电路元件104和所述电路布线108间形成连接；forming a connection between the circuit element 104 and the circuit wiring 108 through a bonding wire;

通过使用热塑性树脂的注入模模制或使用热硬性树脂的传递模模制方式，将上述要素密封；Encapsulation of the above elements by means of injection molding using a thermoplastic resin or transfer molding using a thermosetting resin;

将所述引脚101的加强筋109切除并形成所需的形状，在此，所述加强筋109被切除后，通过测试设备进行必要的测试，测试合格者就成为所述智能功率模块100。The ribs 109 of the pins 101 are cut and formed into a desired shape. Here, after the ribs 109 are cut, necessary tests are performed by testing equipment, and those who pass the test become the intelligent power module 100 .

所述智能功率模块100一般会工作在恶劣的工况中，如全直流变频空调的室外机，高温高湿的状态下，高温会使所述智能功率模块100内部温度升高，对于现行智能功率模块100被所述密封树脂102完全密封的结构，所述智能功率模块100内部非常容易产生热积聚，高温会使水气通过所述密封树脂102与所述引脚101之间的间隙进入所述智能功率模块100的内部电路，所述智能功率模块100内部的高温使离子，特别是氯离子和溴离子在水气的作用下发生迁移，对所述金属线105产生腐蚀，这种腐蚀往往出现在所述金属线105与所述电路元件104或所述金属线105与所述电路布线108的结合部，导致开路，对所述智能功率模块100构成致命破坏，严重时会使所述智能功率模块100发生失控爆炸事故，对其应用环境构成损害，造成重大经济损失。The smart power module 100 generally works in harsh working conditions, such as the outdoor unit of a full DC inverter air conditioner, under high temperature and high humidity conditions, the high temperature will increase the internal temperature of the smart power module 100, for the current smart power The structure in which the module 100 is completely sealed by the sealing resin 102 is very easy to generate heat accumulation inside the intelligent power module 100, and high temperature will cause moisture to enter the The internal circuit of the intelligent power module 100, the high temperature inside the intelligent power module 100 causes ions, especially chloride ions and bromide ions to migrate under the action of water vapor, which corrodes the metal wire 105, and this corrosion often occurs At the junction of the metal wire 105 and the circuit element 104 or the metal wire 105 and the circuit wiring 108, an open circuit is caused, which constitutes a fatal damage to the smart power module 100, and in severe cases, the smart power module 100 may be damaged. An out-of-control explosion accident occurred in the module 100, causing damage to its application environment and causing heavy economic losses.

另外，邦线的线弧高度影响到所述密封树脂102的厚度，所述密封树脂102的厚度越厚，散热性越差，对于所述电路元件104中的发热元件，如果热量不能得到及时散失，会导致所述电路元件104的结温超过工作结温，并且通过耦合使其他非发热电路元件受到波及，引起连锁反应，导致模块性能衰减甚至失控。In addition, the arc height of the state line affects the thickness of the sealing resin 102. The thicker the sealing resin 102 is, the worse the heat dissipation is. For the heating element in the circuit element 104, if the heat cannot be dissipated in time , will cause the junction temperature of the circuit element 104 to exceed the working junction temperature, and cause other non-heating circuit elements to be affected by coupling, causing a chain reaction, resulting in attenuation of module performance or even loss of control.

另外，所述智能功率模块100有不同功率的器件，对于不同功率的器件，所述金属线105的材质和粗细各不相同，增加了所述智能功率模块100的加工难度，购买不同的邦线设备还增加了加工成本，并且，多种邦线工艺的组合使所述智能功率模块100的制造直通率变低，生产良率难以提高。最终导致所述智能功率模块100的成本居高不下，特别是对于中小功率的风机用智能功率模块，对成本的要求特别苛刻，影响了所述智能功率模块的普及应用。In addition, the intelligent power module 100 has devices with different powers. For devices with different powers, the material and thickness of the metal wires 105 are different, which increases the processing difficulty of the intelligent power module 100. The equipment also increases the processing cost, and the combination of various wire bonding processes makes the manufacturing pass rate of the smart power module 100 lower, making it difficult to improve the production yield. Ultimately, the cost of the intelligent power module 100 remains high, especially for the intelligent power module for small and medium power wind turbines, the cost requirements are particularly stringent, which affects the popularization and application of the intelligent power module.

发明内容Contents of the invention

本发明旨在至少解决现有技术或相关技术中存在的技术问题之一。The present invention aims to solve at least one of the technical problems existing in the prior art or related art.

为此，本发明的一个目的在于提出了一种新的智能功率模块。Therefore, an object of the present invention is to propose a new intelligent power module.

本发明的另一个目的在于提出了一种智能功率模块的制备方法。Another object of the present invention is to propose a preparation method of an intelligent power module.

本发明的再一个目的在于提出了一种电力电子设备。Another object of the present invention is to provide a power electronic device.

为实现上述目的，根据本发明的第一方面的实施例，提出了一种智能功率模块，包括：电路基板，所述电路基板的上表面设置有电路布线；多个器件引脚，所述器件引脚与所述电路布线电连接；多个元器件，所述多个元器件倒装在所述电路布线上；封装外壳，至少完全包覆所述电路基板的上表面、所述电路布线和所述多个元器件，其中，所述封装外壳在所述多个元器件中的功率器件位置处形成有凹槽，所述器件引脚自所述封装外壳的内侧向外侧伸出；散热组件，设置在所述凹槽中，所述散热组件用于对所述功率器件进行散热。In order to achieve the above object, according to the embodiment of the first aspect of the present invention, an intelligent power module is proposed, including: a circuit substrate, the upper surface of the circuit substrate is provided with circuit wiring; a plurality of device pins, the device The pins are electrically connected to the circuit wiring; multiple components, the multiple components are flip-chip on the circuit wiring; the package shell at least completely covers the upper surface of the circuit substrate, the circuit wiring and The plurality of components, wherein, the packaging shell is formed with a groove at the position of the power device in the multiple components, and the device pins protrude from the inside to the outside of the packaging shell; the heat dissipation assembly , arranged in the groove, the heat dissipation component is used to dissipate heat from the power device.

根据本发明的实施例的智能功率模块，通过倒装方式使元器件，包括中小功率电路元件形成电连接，不再需要金属邦定线，节省了成本；将模块所有元素用树脂密封，最大限度提高抗水气进入效果，即使外部湿气内侵，因为已不存在金属线，已难以构成腐蚀。在功率器件的位置导热性较低的树脂特别薄并且外置导热性较高的散热组件，极大改善了功率器件的散热坏境，使功率器件可以工作在低结温下，使功率器件的降额使用成为可能，降低了智能功率模块的物料成本。其中，电路基板的下表面可裸露，也可密封于所述封装外壳中，当电路基板的下表面裸露时，能够进一步提高智能功率模块的散热性，当电路基板的下表面密封于封装外壳中时，最大程度保证了智能功率模块的致密性，进一步提高智能功率模块的可靠性。According to the intelligent power module of the embodiment of the present invention, components, including small and medium power circuit components, are electrically connected by flip-chip, and metal bonding wires are no longer needed, which saves costs; all elements of the module are sealed with resin to maximize Improve the anti-moisture ingress effect, even if external moisture intrudes, because there are no metal wires, it is difficult to form corrosion. The resin with low thermal conductivity is particularly thin at the position of the power device and the heat dissipation component with high thermal conductivity is installed outside, which greatly improves the heat dissipation environment of the power device, enables the power device to work at a low junction temperature, and makes the power device Derating is possible, reducing the material cost of intelligent power modules. Wherein, the lower surface of the circuit substrate can be exposed or sealed in the packaging shell. When the lower surface of the circuit substrate is exposed, the heat dissipation of the intelligent power module can be further improved. When the lower surface of the circuit substrate is sealed in the packaging shell , the compactness of the intelligent power module is guaranteed to the greatest extent, and the reliability of the intelligent power module is further improved.

根据本发明的上述实施例的智能功率模块，还可以具有以下技术特征：The intelligent power module according to the above-mentioned embodiments of the present invention may also have the following technical features:

根据本发明的一个实施例，所述电路布线包括引脚焊盘，所述器件引脚安装在所述引脚焊盘上。According to an embodiment of the present invention, the circuit wiring includes pin pads, and the device pins are mounted on the pin pads.

根据本发明的实施例的智能功率模块，引脚可以是一个个单独的引脚，引脚固定在引脚焊盘上，制造过程中无需切除加强筋的工序，能够降低对智能功率模块的系统性冲击，当然，引脚也可以是整排的形式，便于引脚的安装。According to the intelligent power module of the embodiment of the present invention, the pins can be individual pins, and the pins are fixed on the pads of the pins. During the manufacturing process, there is no need to cut off the ribs, which can reduce the impact on the system of the intelligent power module. Of course, the pins can also be in the form of a whole row, which is convenient for the installation of the pins.

根据本发明的第一方面的实施例，还包括：焊接层，设置在所述电路布线与所述多个元器件之间以及在所述引脚焊盘和所述器件引脚之间。According to an embodiment of the first aspect of the present invention, it further includes: a soldering layer disposed between the circuit wiring and the plurality of components and between the pin pad and the device pin.

根据本发明的第一方面的实施例，所述散热组件粘接在所述凹槽中。According to an embodiment of the first aspect of the present invention, the heat dissipation component is bonded in the groove.

根据本发明的实施例的智能模块，散热组件可通过粘胶粘接在凹槽中，其中，粘胶可以是硅胶或其他胶。According to the smart module of the embodiment of the present invention, the heat dissipation component can be bonded in the groove by glue, wherein the glue can be silica gel or other glue.

根据本发明的第一方面的实施例，所述散热组件包括散热片。According to an embodiment of the first aspect of the present invention, the heat dissipation component includes a heat dissipation fin.

根据本发明的第一方面的实施例，所述散热片的高度与所述凹槽的深度相同，所述散热片的顶部形成所述封装外壳表面的一部分。According to an embodiment of the first aspect of the present invention, the height of the heat sink is the same as the depth of the groove, and the top of the heat sink forms a part of the surface of the package.

根据本发明的实施例的智能功率模块，散热片的高度与凹槽的深度相同，以确保散热片在放入凹槽后，散热片的顶部可与封装外壳表面相平且裸露。According to the intelligent power module of the embodiment of the present invention, the height of the heat sink is the same as the depth of the groove, so as to ensure that the top of the heat sink can be flat and exposed to the surface of the package shell after the heat sink is put into the groove.

根据本发明的第一方面的实施例，还包括：合金层，设于所述器件引脚的表层，所述合金层的厚度范围为0.1～10微米。According to an embodiment of the first aspect of the present invention, it further includes: an alloy layer disposed on the surface layer of the device lead, and the thickness of the alloy layer is in the range of 0.1-10 microns.

根据本发明的实施例的智能功率模块，通过在引脚的表层设置合金层，既降低引脚被腐蚀的可能性，又可提高引脚在焊接过程的粘附性。其中，合金层可以包括0.1微米的镍层，可以采用电镀或化学镀的方式形成镍层，其具备较强的钝化能力，能够抵抗大气、碱性物质和酸性物质的腐蚀，降低引脚被腐蚀断路的可能性，且镍层有助于提高引脚的焊接性。According to the intelligent power module of the embodiment of the present invention, by setting the alloy layer on the surface of the pin, the possibility of the pin being corroded can be reduced, and the adhesion of the pin during the welding process can be improved. Among them, the alloy layer can include a nickel layer of 0.1 micron, and the nickel layer can be formed by electroplating or electroless plating, which has a strong passivation ability, can resist the corrosion of the atmosphere, alkaline substances and acidic substances, and reduces the damage of pins. The possibility of corrosion open circuit, and the nickel layer helps to improve the solderability of the pins.

根据本发明的第一方面的实施例，所述合金层的厚度为5微米。According to an embodiment of the first aspect of the present invention, the thickness of the alloy layer is 5 microns.

根据本发明的第一方面的实施例，所述封装外壳还完全包覆所述电路基板的下表面。According to an embodiment of the first aspect of the present invention, the encapsulation shell also completely covers the lower surface of the circuit substrate.

根据本发明的实施例的智能功率模块，封装外壳还完全包覆电路基板的下表面，使得所有元素都密封在封装外壳内，增加了智能功率模块的致密性。According to the intelligent power module of the embodiment of the present invention, the encapsulation shell also completely covers the lower surface of the circuit substrate, so that all elements are sealed in the encapsulation shell, which increases the compactness of the intelligent power module.

根据本发明的第一方面的实施例，所述电路布线的厚度大于或等于0.07毫米。According to an embodiment of the first aspect of the present invention, the thickness of the circuit wiring is greater than or equal to 0.07 mm.

根据本发明的第二方面的实施例，提出了一种智能功率模块的制备方法，包括：在电路基板的上表面形成电路布线，其中，所述电路布线包括引脚焊盘；形成多个器件引脚；在所述电路布线上倒装元器件，以及在所述引脚焊盘上焊接所述器件引脚；对形成有所述电路布线、所述元器件及所述器件引脚的所述电路基板进行封装，以形成封装外壳，其中，所述封装外壳至少完全包覆所述电路基板的上表面、所述电路布线和所述元器件，所述封装外壳在所述元器件中的功率器件位置处形成有凹槽，所述器件引脚自所述封装外壳的内侧向外侧伸出；在所述凹槽中安装散热组件。According to an embodiment of the second aspect of the present invention, a method for manufacturing an intelligent power module is proposed, including: forming circuit wiring on the upper surface of the circuit substrate, wherein the circuit wiring includes pin pads; forming a plurality of devices pins; flip-chip components on the circuit wiring, and weld the device pins on the pin pad; for all the circuit wiring, the components and the device pins formed The circuit substrate is packaged to form a packaging shell, wherein the packaging shell at least completely covers the upper surface of the circuit substrate, the circuit wiring and the components, and the packaging shell is in the components A groove is formed at the position of the power device, and the device pins protrude from the inner side to the outer side of the packaging shell; a heat dissipation component is installed in the groove.

根据本发明的实施例的智能功率模块的制备方法，在制造智能功率模块过程中，元器件直接倒装在电路布线上，免去了金属线邦定和清洗工序，进一步提高了智能功率模块的可靠性，而且还节省了设备投入，提高了生产效率，降低了工艺管控要求，使智能功率模块的制造难度大幅下降，制造良率得到提高，进一步降低了智能功率模块的成本，功率器件对应的散热片外置处理，不再对焊接空洞率提出要求，降低了对焊接设备技术要求和工艺管控要求，进一步降低智能功率模块的制造成本。其中，电路基板的下表面可裸露，也可密封于所述封装外壳中，当电路基板的下表面裸露时，能够进一步提高智能功率模块的散热性，当电路基板的下表面密封于封装外壳中时，最大程度保证了智能功率模块的致密性，进一步提高智能功率模块的可靠性。According to the preparation method of the intelligent power module of the embodiment of the present invention, in the process of manufacturing the intelligent power module, the components are directly flipped on the circuit wiring, eliminating the need for metal wire bonding and cleaning processes, and further improving the performance of the intelligent power module. Reliability, but also saves equipment investment, improves production efficiency, reduces process control requirements, greatly reduces the difficulty of manufacturing smart power modules, improves manufacturing yield, and further reduces the cost of smart power modules. Power devices correspond to The heat sink is externally disposed, which no longer imposes requirements on the welding void rate, reduces the technical requirements for welding equipment and process control requirements, and further reduces the manufacturing cost of the intelligent power module. Wherein, the lower surface of the circuit substrate can be exposed or sealed in the packaging shell. When the lower surface of the circuit substrate is exposed, the heat dissipation of the intelligent power module can be further improved. When the lower surface of the circuit substrate is sealed in the packaging shell , the compactness of the intelligent power module is guaranteed to the greatest extent, and the reliability of the intelligent power module is further improved.

根据本发明的上述实施例的智能功率模块的制备方法，还可以具有以下技术特征：The method for preparing an intelligent power module according to the above-mentioned embodiments of the present invention may also have the following technical features:

根据本发明的一个实施例，所述在电路基板的上表面形成电路布线的步骤，具体包括：采用冲压工艺或刻蚀工艺在所述电路基板的上表面形成所述电路布线。According to an embodiment of the present invention, the step of forming the circuit wiring on the upper surface of the circuit substrate specifically includes: forming the circuit wiring on the upper surface of the circuit substrate by using a stamping process or an etching process.

根据本发明的一个实施例，所述在所述电路布线上倒装元器件，以及在所述引脚焊盘上焊接所述器件引脚的步骤，具体包括：采用锡膏印刷机及钢网在所述电路布线形成焊接层，其中，包括在所述引脚焊盘上形成所述焊接层；将所述元器件通过所述焊接层倒装在所述电路布线上；将所述器件引脚的一端通过所述焊接层组装至所述引脚焊盘上。According to an embodiment of the present invention, the step of flipping the components on the circuit wiring and soldering the device pins on the pin pads specifically includes: using a solder paste printing machine and a stencil Forming a soldering layer on the circuit wiring includes forming the soldering layer on the pin pad; flipping the components on the circuit wiring through the soldering layer; One end of the pin is assembled to the pin pad through the solder layer.

根据本发明的实施例的智能功率模块的制备方法，可采用锡膏印刷机及钢网在电路布线形成焊接层，也即对电路布线的特定位置进行锡膏涂装，钢网的厚度可选用0.13毫米。According to the preparation method of the intelligent power module according to the embodiment of the present invention, a solder paste printing machine and a stencil can be used to form a soldering layer on the circuit wiring, that is, a solder paste coating is performed on a specific position of the circuit wiring, and the thickness of the stencil can be selected 0.13mm.

根据本发明的一个实施例，所述对形成有所述电路布线、所述元器件及所述器件引脚的所述电路基板进行封装，以形成封装外壳的步骤，具体包括：在无氧环境中，采用目标烘烤温度对形成有所述电路布线、所述元器件及所述器件引脚的所述电路基板进行持续目标时长的烘烤；将烘烤后的形成有所述电路布线、所述元器件及所述器件引脚的所述电路基板放置于塑封模具中，其中，所述塑料模具包括上模和下模，所述上模形成有凸起部，所述元器件中的功率器件位于所述凸起部下方、且与所述凸起部之间存在间隙；通过所述塑封模具的浇口注入密封树脂，以形成所述封装外壳，其中，所述封装外壳基于所述凸起部形成所述凹槽，所述电路基板的下表面裸露或密封于所述封装外壳内。According to an embodiment of the present invention, the step of packaging the circuit substrate formed with the circuit wiring, the components and the device pins to form a packaging shell specifically includes: wherein, the target baking temperature is used to bake the circuit substrate formed with the circuit wiring, the components and the device pins for a target duration; The components and the circuit substrate of the device pins are placed in a plastic sealing mold, wherein the plastic mold includes an upper mold and a lower mold, and the upper mold is formed with a raised portion, and the components in the components are The power device is located under the raised portion and there is a gap between the raised portion; the sealing resin is injected through the gate of the plastic mold to form the packaging shell, wherein the packaging shell is based on the The protruding part forms the groove, and the lower surface of the circuit substrate is exposed or sealed in the package shell.

根据本发明的实施例的智能功率模块的制备方法，目标烘烤温度可选用125℃，目标时长大于或等于2小时，可使用热硬性树脂的传递模模制或使用热硬性树脂的注入模模制来进行密封，上模的凸起部与功率器件的距离比较近，需要适当调高注塑压力，由于不存在邦定线，不存在冲线的风险，所以注塑压力的调高不影响智能功率模块的品质。According to the manufacturing method of the intelligent power module of the embodiment of the present invention, the target baking temperature can be selected as 125°C, and the target duration is greater than or equal to 2 hours, and the transfer molding of thermosetting resin or the injection molding of thermosetting resin can be used. The distance between the convex part of the upper mold and the power device is relatively close, and the injection pressure needs to be increased appropriately. Since there is no bonding line, there is no risk of punching the line, so the increase in injection pressure does not affect the smart power. The quality of the modules.

根据本发明的一个实施例，所述在所述凹槽中安装散热组件的步骤，具体包括：向所述凹槽中注入粘胶，并将所述散热组件镶嵌在所述凹槽中。According to an embodiment of the present invention, the step of installing the heat dissipation component in the groove specifically includes: injecting glue into the groove, and embedding the heat dissipation component in the groove.

根据本发明的实施例的智能功率模块的制备方法，粘胶可以是硅胶或其他胶，散热组件的高度可与凹槽的深度相同，以确保散热组件在放入凹槽后，散热组件的顶部可与封装外壳表面相平且裸露。According to the preparation method of the intelligent power module of the embodiment of the present invention, the glue can be silica gel or other glues, and the height of the heat dissipation component can be the same as the depth of the groove, so as to ensure that the top of the heat dissipation component It can be flat and exposed to the surface of the package shell.

根据本发明的第三方面的实施例，提出了一种电力电子设备，包括：如上述实施例中任一项所述的智能功率模块；或如上述实施例中任一项所述的智能功率模块的制备方法制备而成的智能功率模块。According to the embodiment of the third aspect of the present invention, a power electronic device is proposed, including: the intelligent power module described in any one of the above embodiments; or the intelligent power module described in any one of the above embodiments The intelligent power module prepared by the module preparation method.

根据本发明的一个实施例，所述电力电子设备包括空调器。According to an embodiment of the present invention, the power electronic equipment includes an air conditioner.

本发明的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本发明的实践了解到。Additional aspects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.

附图说明Description of drawings

本发明的上述和/或附加的方面和优点从结合下面附图对实施例的描述中将变得明显和容易理解，其中：The above and/or additional aspects and advantages of the present invention will become apparent and comprehensible from the description of the embodiments in conjunction with the following drawings, wherein:

图1A是智能功率模块100的俯视图；FIG. 1A is a top view of an intelligent power module 100;

图1B是图1A的X-X’线剖面图；Fig. 1 B is the XX ' line sectional view of Fig. 1A;

图1C是图1A中引脚的连接的示意图；Figure 1C is a schematic diagram of the connection of the pins in Figure 1A;

图2A示出了根据本发明的实施例的智能功率模块的上表面俯视图；FIG. 2A shows a top view of the upper surface of an intelligent power module according to an embodiment of the present invention;

图2B和图2E分别是图2A的X-X’线剖面图；Fig. 2B and Fig. 2E are respectively the X-X ' line sectional view of Fig. 2A;

图2C是图2A中元器件去除树脂(封装外壳)后的俯视图；Fig. 2C is a top view of the components and parts in Fig. 2A after the resin (encapsulation shell) is removed;

图2D和图2F示出了根据本发明的实施例的智能功率模块的下表面俯视图；2D and 2F show top views of the lower surface of an intelligent power module according to an embodiment of the present invention;

图3A示出了根据本发明的实施例的智能功率模块的制备方法中制备电路基板的俯视图；FIG. 3A shows a top view of a circuit substrate prepared in a method for manufacturing an intelligent power module according to an embodiment of the present invention;

图3B示出了根据本发明的实施例的智能功率模块的制备方法中制备电路基板的侧视图；FIG. 3B shows a side view of a circuit substrate prepared in a method for manufacturing an intelligent power module according to an embodiment of the present invention;

图4A示出了根据本发明的一个实施例的智能功率模块的制备方法中制备引脚的结构示意图；FIG. 4A shows a schematic structural view of pins prepared in a method for preparing an intelligent power module according to an embodiment of the present invention;

图4B示出了根据本发明的另一个实施例的智能功率模块的制备方法中制备引脚的结构示意图；FIG. 4B shows a schematic structural diagram of pins prepared in a method for manufacturing an intelligent power module according to another embodiment of the present invention;

图5A示出了根据本发明的实施例的智能功率模块的制备方法中装配元器件和引脚的侧视工序示意图；FIG. 5A shows a schematic diagram of a side-view process of assembling components and pins in a manufacturing method of an intelligent power module according to an embodiment of the present invention;

图5B示出了根据本发明的实施例的智能功率模块的制备方法中装配元器件和引脚的俯视工序示意图；Fig. 5B shows a schematic diagram of the top view process of assembling components and pins in the manufacturing method of the intelligent power module according to the embodiment of the present invention;

图6A和图6B分别示出了根据本发明的实施例的智能功率模块的制备方法的密封工序示意图；FIG. 6A and FIG. 6B respectively show a schematic diagram of a sealing process of a manufacturing method of an intelligent power module according to an embodiment of the present invention;

图7示出了根据本发明的实施例的智能功率模块的制备方法的检测工序示意图；FIG. 7 shows a schematic diagram of a detection process of a method for manufacturing an intelligent power module according to an embodiment of the present invention;

图8示出了根据本发明的实施例的智能功率模块的制备方法的流程示意图。Fig. 8 shows a schematic flowchart of a method for manufacturing an intelligent power module according to an embodiment of the present invention.

具体实施方式detailed description

为了能够更清楚地理解本发明的上述目的、特征和优点，下面结合附图和具体实施方式对本发明进行进一步的详细描述。需要说明的是，在不冲突的情况下，本申请的实施例及实施例中的特征可以相互组合。In order to understand the above-mentioned purpose, features and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that, in the case of no conflict, the embodiments of the present application and the features in the embodiments can be combined with each other.

在下面的描述中阐述了很多具体细节以便于充分理解本发明，但是，本发明还可以采用其他不同于在此描述的其他方式来实施，因此，本发明的保护范围并不受下面公开的具体实施例的限制。In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described here. Therefore, the protection scope of the present invention is not limited by the specific details disclosed below. EXAMPLE LIMITATIONS.

实施例一：Embodiment one:

以下结合图2A至图2D、图3A、图3B、图4A、图4B、图5A、图5B、图6A、图7和图8对本发明的技术方案作进一步说明。The technical solution of the present invention will be further described below in conjunction with FIGS.

如图2A至图2D所示，智能功率模块200包括：电路基板202，所述电路基板202的上表面设置有电路布线204(其中，电路基板上还设置有绝缘层214，绝缘层214形成于电路基板202的上表面，所述电路布线204位于所述绝缘层214上)；多个器件引脚206，所述器件引脚206与所述电路布线204电连接；多个元器件208，所述多个元器件208倒装在所述电路布线204上；封装外壳210，完全包覆所述电路基板202的上表面和下表面、所述电路布线204和所述多个元器件208，其中，所述封装外壳210在所述多个元器件208中的功率器件2082位置处形成有凹槽，所述器件引脚206自所述封装外壳210的内侧向外侧伸出；散热组件212，设置在所述凹槽中，所述散热组件212用于对所述功率器件2082进行散热。As shown in Fig. 2A to Fig. 2D, the intelligent power module 200 includes: a circuit substrate 202, the upper surface of the circuit substrate 202 is provided with circuit wiring 204 (wherein, an insulating layer 214 is also provided on the circuit substrate, and the insulating layer 214 is formed on The upper surface of the circuit substrate 202, the circuit wiring 204 is located on the insulating layer 214); a plurality of device pins 206, the device pins 206 are electrically connected to the circuit wiring 204; a plurality of components 208, the The plurality of components 208 are flip-chip on the circuit wiring 204; the packaging shell 210 completely covers the upper surface and the lower surface of the circuit substrate 202, the circuit wiring 204 and the plurality of components 208, wherein , the packaging shell 210 is formed with a groove at the position of the power device 2082 in the plurality of components 208, and the device pin 206 protrudes from the inside to the outside of the packaging shell 210; the heat dissipation assembly 212 is set In the groove, the heat dissipation component 212 is used to dissipate heat from the power device 2082 .

通过倒装方式使元器件，包括中小功率电路元件形成电连接，不再需要金属邦定线，节省了成本；将模块所有元素用树脂密封，最大限度提高抗水气进入效果，即使外部湿气内侵，因为已不存在金属线，已难以构成腐蚀。在功率器件的位置导热性较低的树脂特别薄并且外置导热性较高的散热组件，极大改善了功率器件的散热坏境，使功率器件可以工作在低结温下，使功率器件的降额使用成为可能，降低了智能功率模块的物料成本。其中，电路基板的下表面和下表面均密封于所述封装外壳中，增强了智能功率模块的致密性。Components, including small and medium power circuit components, are electrically connected by flip-chip, and metal bonding wires are no longer needed, which saves costs; all elements of the module are sealed with resin to maximize the anti-moisture ingress effect, even if external moisture Intrusion, because there are no metal lines, it is difficult to form corrosion. The resin with low thermal conductivity is particularly thin at the position of the power device and the heat dissipation component with high thermal conductivity is installed outside, which greatly improves the heat dissipation environment of the power device, enables the power device to work at a low junction temperature, and makes the power device Derating is possible, reducing the material cost of intelligent power modules. Wherein, both the lower surface and the lower surface of the circuit substrate are sealed in the packaging shell, which enhances the compactness of the intelligent power module.

根据本发明的上述实施例的智能功率模块200，还可以具有以下技术特征：The intelligent power module 200 according to the above-mentioned embodiments of the present invention may also have the following technical features:

根据本发明的一个实施例，所述电路布线204包括引脚焊盘2042，所述器件引脚206安装在所述引脚焊盘2042上。According to an embodiment of the present invention, the circuit wiring 204 includes a pin pad 2042 on which the device pin 206 is mounted.

引脚可以是一个个单独的引脚，引脚固定在引脚焊盘上，制造过程中无需切除加强筋的工序，能够降低对智能功率模块的系统性冲击，当然，引脚也可以是整排的形式，便于引脚的安装。The pins can be individual pins, and the pins are fixed on the pads of the pins. There is no need to cut off the ribs during the manufacturing process, which can reduce the systemic impact on the intelligent power module. Of course, the pins can also be integral. The form of the row is convenient for the installation of the pins.

根据本发明的第一方面的实施例，还包括：焊接层(图中未示出)，设置在所述电路布线与所述多个元器件之间以及在所述引脚焊盘和所述器件引脚之间。According to an embodiment of the first aspect of the present invention, it also includes: a soldering layer (not shown in the figure), arranged between the circuit wiring and the plurality of components and between the pin pad and the between device pins.

根据本发明的第一方面的实施例，所述散热组件212粘接在所述凹槽中。According to an embodiment of the first aspect of the present invention, the heat dissipation component 212 is bonded in the groove.

散热组件可通过粘胶粘接在凹槽中，其中，粘胶可以是硅胶或其他胶。The heat dissipation component can be bonded in the groove by adhesive, wherein the adhesive can be silica gel or other adhesives.

根据本发明的第一方面的实施例，所述散热组件212包括散热片。According to an embodiment of the first aspect of the present invention, the heat dissipation component 212 includes heat dissipation fins.

根据本发明的第一方面的实施例，所述散热片的高度与所述凹槽的深度相同，所述散热片的顶部形成所述封装外壳表面的一部分。According to an embodiment of the first aspect of the present invention, the height of the heat sink is the same as the depth of the groove, and the top of the heat sink forms a part of the surface of the package.

散热片的高度与凹槽的深度相同，以确保散热片在放入凹槽后，散热片的顶部可与封装外壳表面相平且裸露。The height of the heat sink is the same as the depth of the groove, so as to ensure that the top of the heat sink can be flat and exposed to the surface of the package after the heat sink is placed in the groove.

根据本发明的第一方面的实施例，还包括：合金层(图中未示出)，设于所述器件引脚206的表层，所述合金层的厚度范围为0.1～10微米。According to the embodiment of the first aspect of the present invention, it further includes: an alloy layer (not shown in the figure) provided on the surface layer of the device pin 206, and the thickness of the alloy layer is in the range of 0.1-10 microns.

通过在引脚的表层设置合金层，既降低引脚被腐蚀的可能性，又可提高引脚在焊接过程的粘附性。其中，合金层可以包括0.1微米的镍层，可以采用电镀或化学镀的方式形成镍层，其具备较强的钝化能力，能够抵抗大气、碱性物质和酸性物质的腐蚀，降低引脚被腐蚀断路的可能性，且镍层有助于提高引脚的焊接性。By setting the alloy layer on the surface of the pin, the possibility of the pin being corroded can be reduced, and the adhesion of the pin during the welding process can be improved. Among them, the alloy layer can include a nickel layer of 0.1 micron, and the nickel layer can be formed by electroplating or electroless plating, which has a strong passivation ability, can resist the corrosion of the atmosphere, alkaline substances and acidic substances, and reduces the damage of pins. The possibility of corrosion open circuit, and the nickel layer helps to improve the solderability of the pins.

根据本发明的第一方面的实施例，所述合金层的厚度为5微米。According to an embodiment of the first aspect of the present invention, the thickness of the alloy layer is 5 microns.

根据本发明的第一方面的实施例，所述电路布线204的厚度大于或等于0.07毫米。According to an embodiment of the first aspect of the present invention, the thickness of the circuit wiring 204 is greater than or equal to 0.07 mm.

根据本发明的实施例的智能功率模块200的制备方法包括：在电路基板202的上表面形成电路布线204，其中，所述电路布线204包括引脚焊盘2042；形成多个器件引脚206；在所述电路布线204上倒装元器件208，以及在所述引脚焊盘2042上焊接所述器件引脚206；对形成有所述电路布线204、所述元器件208及所述器件引脚206的所述电路基板202进行封装，以形成封装外壳210，其中，所述封装外壳210完全包覆所述电路基板202的上表面和下表面、所述电路布线204和所述元器件208，所述封装外壳210在所述元器件208中的功率器件2082位置处形成有凹槽，所述器件引脚206自所述封装外壳210的内侧向外侧伸出；在所述凹槽中安装散热组件212。The manufacturing method of the intelligent power module 200 according to the embodiment of the present invention includes: forming circuit wiring 204 on the upper surface of the circuit substrate 202, wherein the circuit wiring 204 includes pin pads 2042; forming a plurality of device pins 206; Flip-chip components 208 on the circuit wiring 204, and weld the device pin 206 on the pin pad 2042; The circuit substrate 202 of the pin 206 is packaged to form a packaging shell 210, wherein the packaging shell 210 completely covers the upper surface and the lower surface of the circuit substrate 202, the circuit wiring 204 and the components 208 , the package shell 210 is formed with a groove at the position of the power device 2082 in the component device 208, and the device pin 206 protrudes from the inside of the package shell 210 to the outside; install in the groove The heat dissipation component 212 .

在制造智能功率模块过程中，元器件直接倒装在电路布线上，免去了金属线邦定和清洗工序，进一步提高了智能功率模块的可靠性，而且还节省了设备投入，提高了生产效率，降低了工艺管控要求，使智能功率模块的制造难度大幅下降，制造良率得到提高，进一步降低了智能功率模块的成本，功率器件对应的散热片外置处理，不再对焊接空洞率提出要求，降低了对焊接设备技术要求和工艺管控要求，进一步降低智能功率模块的制造成本。其中，电路基板的上表面和下表面密封于封装外壳中时，最大程度保证了智能功率模块的致密性，进一步提高智能功率模块的可靠性。In the process of manufacturing smart power modules, the components are directly flipped on the circuit wiring, eliminating the need for metal wire bonding and cleaning processes, further improving the reliability of smart power modules, saving equipment investment, and improving production efficiency , which reduces the process control requirements, greatly reduces the difficulty of manufacturing smart power modules, improves the manufacturing yield, and further reduces the cost of smart power modules. The heat sink corresponding to the power device is externally treated, and no longer requires soldering voids. , which reduces the technical requirements for welding equipment and process control requirements, and further reduces the manufacturing cost of intelligent power modules. Wherein, when the upper surface and the lower surface of the circuit substrate are sealed in the packaging shell, the compactness of the intelligent power module is guaranteed to the greatest extent, and the reliability of the intelligent power module is further improved.

根据本发明的上述实施例的智能功率模块的制备方法，还可以具有以下技术特征：The method for preparing an intelligent power module according to the above-mentioned embodiments of the present invention may also have the following technical features:

根据本发明的一个实施例，所述在电路基板202的上表面形成电路布线的步骤，具体包括：采用冲压工艺或刻蚀工艺在所述电路基板202的上表面形成所述电路布线204。According to an embodiment of the present invention, the step of forming the circuit wiring on the upper surface of the circuit substrate 202 specifically includes: forming the circuit wiring 204 on the upper surface of the circuit substrate 202 by using a stamping process or an etching process.

根据本发明的一个实施例，所述在所述电路布线上倒装多个元器件，以及在所述引脚焊盘上焊接所述器件引脚的步骤，具体包括：采用锡膏印刷机及钢网在所述电路布线204形成焊接层，其中，包括在所述引脚焊盘2042上形成所述焊接层；将所述多个元器件208通过所述焊接层倒装在所述电路布线204上；将所述器件引脚206的一端通过所述焊接层组装至所述引脚焊盘2042上。According to an embodiment of the present invention, the step of flipping a plurality of components on the circuit wiring and soldering the device pins on the pin pads specifically includes: using a solder paste printing machine and The stencil forms a welding layer on the circuit wiring 204, including forming the welding layer on the pin pad 2042; flip-chip the plurality of components 208 on the circuit wiring through the welding layer 204 ; assemble one end of the device lead 206 to the lead pad 2042 through the solder layer.

可采用锡膏印刷机及钢网在电路布线形成焊接层，也即对电路布线的特定位置进行锡膏涂装，钢网的厚度可选用0.13毫米。A solder paste printing machine and a steel mesh can be used to form a soldering layer on the circuit wiring, that is, solder paste coating is performed on a specific position of the circuit wiring. The thickness of the steel mesh can be selected to be 0.13mm.

根据本发明的一个实施例，所述对形成有所述电路布线、所述元器件及所述器件引脚的所述电路基板进行封装，以形成封装外壳的步骤，具体包括：在无氧环境中，采用目标烘烤温度对形成有所述电路布线204、所述元器件208及所述器件引脚206的所述电路基板202进行持续目标时长的烘烤；将烘烤后的形成有所述电路布线204、所述元器件208及所述器件引脚206的所述电路基板206放置于塑封模具中，其中，所述塑料模具包括上模和下模，所述上模形成有凸起部，所述元器件208中的功率器件2082位于所述凸起部下方、且与所述凸起部之间存在间隙；通过所述塑封模具的浇口注入密封树脂，以形成所述封装外壳210，其中，所述封装外壳210基于所述凸起部形成所述凹槽。According to an embodiment of the present invention, the step of packaging the circuit substrate formed with the circuit wiring, the components and the device pins to form a packaging shell specifically includes: In the process, the target baking temperature is used to bake the circuit substrate 202 formed with the circuit wiring 204, the components 208 and the device pins 206 for a target duration; The circuit wiring 204, the components 208 and the circuit substrate 206 of the device pin 206 are placed in a plastic sealing mold, wherein the plastic mold includes an upper mold and a lower mold, and the upper mold is formed with a protrusion part, the power device 2082 in the component device 208 is located below the raised part, and there is a gap between the raised part; the sealing resin is injected through the gate of the plastic sealing mold to form the packaging shell 210, wherein the package shell 210 forms the groove based on the protrusion.

目标烘烤温度可选用125℃，目标时长大于或等于2小时，可使用热硬性树脂的传递模模制或使用热硬性树脂的注入模模制来进行密封，上模的凸起部与功率器件的距离比较近，需要适当调高注塑压力，由于不存在邦定线，不存在冲线的风险，所以注塑压力的调高不影响智能功率模块的品质。The target baking temperature can be selected at 125°C, and the target duration is greater than or equal to 2 hours. It can be sealed by transfer molding of thermosetting resin or injection molding of thermosetting resin. The convex part of the upper mold is connected with the power device. If the distance is relatively short, it is necessary to increase the injection pressure appropriately. Since there is no bonding line, there is no risk of punching the line, so the increase in injection pressure will not affect the quality of the intelligent power module.

根据本发明的一个实施例，所述在所述凹槽中安装散热组件的步骤，具体包括：向所述凹槽中注入粘胶，并将所述散热组件212镶嵌在所述凹槽中。According to an embodiment of the present invention, the step of installing the heat dissipation component in the groove specifically includes: injecting glue into the groove, and embedding the heat dissipation component 212 in the groove.

粘胶可以是硅胶或其他胶，散热组件的高度可与凹槽的深度相同，以确保散热组件在放入凹槽后，散热组件的顶部可与封装外壳表面相平且裸露。The adhesive can be silicone or other glues, and the height of the heat dissipation component can be the same as the depth of the groove, so as to ensure that after the heat dissipation component is placed in the groove, the top of the heat dissipation component can be flat and exposed to the surface of the package shell.

其中，电路基板202是采用1050、5052等材质的铝构成的矩形板材。在此，为了降低成本，可以使用1050的铝材，为了提高硬度，可以选择5052的铝材；为了提高耐压和硬度，可以对铝材进行阳极氧化处理，为了提高散热性，也可以不作阳极氧化。电路基板102的厚度可以设计为1.5毫米～2.0毫米。Wherein, the circuit substrate 202 is a rectangular plate made of 1050, 5052 and other aluminum materials. Here, in order to reduce the cost, you can use 1050 aluminum material, and in order to increase the hardness, you can choose 5052 aluminum material; in order to improve the pressure resistance and hardness, the aluminum material can be anodized, and in order to improve heat dissipation, it is not necessary to make an anode oxidation. The thickness of the circuit substrate 102 can be designed to be 1.5mm-2.0mm.

位于所述电路基板202其中一个表面(本实施例中以上表面为例进行说明)的绝缘层214是可以设计为厚度100微米～200微米，使用稳态热流法测得的热导率应在2W/(m×K)～3W/(m×K)为宜，在此，为了节省成本并提高导热性，可以绝缘层214的厚度选择100微米，为了提高耐压，可以选择200微米的厚度，绝缘层214的厚度一般不应超过200微米，在此，绝缘层的厚度选择得越厚，热导率应该相应选择得越高。The insulating layer 214 located on one of the surfaces of the circuit substrate 202 (the above surface is taken as an example in this embodiment) can be designed to have a thickness of 100 microns to 200 microns, and the thermal conductivity measured by the steady-state heat flow method should be within 2W. /(m×K)～3W/(m×K) is suitable. Here, in order to save cost and improve thermal conductivity, the thickness of the insulating layer 214 can be selected as 100 microns, and in order to improve the withstand voltage, the thickness of 200 microns can be selected. The thickness of the insulating layer 214 should generally not exceed 200 microns. Here, the thicker the thickness of the insulating layer is selected, the higher the thermal conductivity should be selected accordingly.

所述电路布线204由厚度为2盎司以上的铜材通过冲压或刻蚀的形式制作而成，为了防止氧化，所述电路布线204的上表面可以进行镀金处理，为了成本，所述电路布线204的上表面也可以进行镀银处理，或者通过真空或充氮包装进行运输，上表面不作处理。The circuit wiring 204 is made of copper with a thickness of more than 2 ounces by stamping or etching. In order to prevent oxidation, the upper surface of the circuit wiring 204 can be gold-plated. For cost, the circuit wiring 204 The upper surface can also be silver-plated, or it can be shipped in vacuum or nitrogen-filled packaging without treatment on the upper surface.

在此，所述电路布线204的至少一个边缘上，有用于配置下述引脚的特殊的电路布线，称为引脚焊盘2042。Here, on at least one edge of the circuit wiring 204, there is a special circuit wiring for disposing the following pins, which is called a pin pad 2042 .

所述元器件208被倒装固定在所述电路布线204上。所述元器件208采用晶体管或二极管等有源元件、或者电容或电阻等无源元件，另外，还具有功率元件等发热量大的IGBT(Insulated Gate Bipolar Translator，绝缘栅门极晶体管)、FRD(Fast Recovery Diode，快速恢复二极管)、MOS(Metal Oxide Semiconductor，金属氧化物半导体)场效应管等，在此，这些功率元件一般不应超过5A/600V的额定工作电流和电压，并且使用平面结构，如IGBT管，必须使用LIGBT(Lateral Insulated Gate Bipolar Translator，横向绝缘栅门极晶体管)。The component 208 is flip-chip fixed on the circuit wiring 204 . The components 208 adopt active components such as transistors or diodes, or passive components such as capacitors or resistors. In addition, there are also IGBT (Insulated Gate Bipolar Translator, Insulated Gate Bipolar Translator), FRD ( Fast Recovery Diode, fast recovery diode), MOS (Metal Oxide Semiconductor, metal oxide semiconductor) field effect transistor, etc. Here, these power components should generally not exceed the rated operating current and voltage of 5A/600V, and use a planar structure. For example, IGBT tubes must use LIGBT (Lateral Insulated Gate Bipolar Translator, lateral insulated gate transistor).

所述引脚206被固定在所述引脚焊盘2042上。The pins 206 are fixed on the pin pads 2042 .

在此，设计成一边上设有多条引脚206，其具有例如与外部进行输入、输出的作用。引脚206和引脚焊盘2042通过焊锡等导电性粘结剂焊接。Here, it is designed that a plurality of pins 206 are provided on one side, for example, for input and output with the outside. The pins 206 and the pin pads 2042 are bonded with a conductive adhesive such as solder.

所述引脚206一般采用铜等金属制成，铜表面通过化学镀和电镀形成一层镍锡合金层，合金层的厚度一般为5微米，镀层可保护铜不被腐蚀氧化，并可提高可焊接性。The pin 206 is generally made of copper and other metals, and the copper surface forms a layer of nickel-tin alloy layer through chemical plating and electroplating. The thickness of the alloy layer is generally 5 microns, and the plating layer can protect copper from corrosion and oxidation, and can improve Weldability.

所述封装外壳(可为树脂材料)210可通过传递模方式使用热硬性树脂模制也可使用注入模方式使用热塑性树脂模制。在此，所述封装外壳210完全密封电路布线204的一面上的所有元器件208，包括功率元件2082；在此，所述电路基板202下表面也被所述封装外壳210覆盖，使智能功率模块的耐潮湿能力得以提高；在此，因为所述功率元件2082也被所述封装外壳210完全密封，所以，所述封装外壳210一般应该选择角型结晶较多的材料，以提高其热导率，可以考虑选择松下的3300系列或日立的3600系列；另外，为了保证所述智能功率模块的可靠性，所述封装外壳210的漏电起痕能力不应低于500V；在此，所述封装外壳210密封智能功率模块正面的部分不是规则平坦的，而是在覆盖功率元件2082的位置存在凹陷，使所述封装外壳210密封这些特定功率元件2082的部分非常薄；在凹陷的位置配置有金属散热片212，所述金属散热片212的高度与凹陷的深度一致，所以所述散热片212镶嵌到凹陷后，所述散热片212的顶部与所述封装外壳210的顶部相平，所述金属散热片212可使用表面镀镍的铜材，也可以使用表面阳极氧化的铝材。The package case (which may be a resin material) 210 can be molded with a thermosetting resin by transfer molding or can be molded with a thermoplastic resin by injection molding. Here, the encapsulation shell 210 completely seals all the components 208 on one side of the circuit wiring 204, including the power element 2082; here, the lower surface of the circuit substrate 202 is also covered by the encapsulation shell 210, so that the smart power module The moisture resistance ability is improved; here, because the power element 2082 is also completely sealed by the package case 210, the package case 210 should generally choose a material with more angular crystals to improve its thermal conductivity. , you can consider choosing Panasonic’s 3300 series or Hitachi’s 3600 series; in addition, in order to ensure the reliability of the intelligent power module, the tracking capability of the packaging shell 210 should not be lower than 500V; here, the packaging shell 210 seals the front part of the intelligent power module is not regular and flat, but there is a depression at the position covering the power element 2082, so that the part of the packaging shell 210 sealing these specific power elements 2082 is very thin; metal heat dissipation is arranged at the concave position sheet 212, the height of the metal heat sink 212 is consistent with the depth of the recess, so after the heat sink 212 is embedded in the recess, the top of the heat sink 212 is level with the top of the package shell 210, and the metal heat sink The sheet 212 can be made of nickel-plated copper or aluminum with anodized surface.

如图8所示，智能功率模块200的制备方法包括：As shown in FIG. 8, the preparation method of the intelligent power module 200 includes:

(1)步骤802，在大小合适的铜板上形成电路布线(1) Step 802, forming circuit wiring on a copper plate of appropriate size

如图3A和3B所示，根据需要的电路布局设计大小合适的电路基板202，对于一般的智能功率模块，一枚的大小可选取50mm×25mm，三枚的短边相连的大小为50mm×75mm，形成一个由三枚智能功率模块金属电路基板202组成的三联板单元，对两面进行防蚀处理。在铝基板的表面上设有绝缘层214。另外，在绝缘层214的表面粘贴有作为电路布线204的铜箔。然后将该工序制造的铜箔进行蚀刻，局部地除去铜箔，形成所述电路布线204及所述引脚焊盘2042。As shown in Figures 3A and 3B, design a circuit substrate 202 with a suitable size according to the required circuit layout. For a general intelligent power module, the size of one piece can be selected as 50mm×25mm, and the size of the three connected short sides is 50mm×75mm , forming a triple board unit composed of three metal circuit boards 202 of the intelligent power module, and performing anti-corrosion treatment on both sides. An insulating layer 214 is provided on the surface of the aluminum substrate. In addition, a copper foil as the circuit wiring 204 is pasted on the surface of the insulating layer 214 . Then, the copper foil produced in this step is etched to partially remove the copper foil, thereby forming the circuit wiring 204 and the lead pad 2042 .

在此，大小合适的铝基板的形成是通过直接对1m×1m的铝材进行锣板处理的方式形成，锣刀使用高速钢作为材质，马达使用5000转/分钟的转速，锣刀与铝材平面呈直角下刀，可以使1100铝材的边缘呈直角，毛刺小于10微米，也可通过蚀刻工具，通过化学反应刻蚀出特定的形状，也可以通过V-CUT和冲压的方法形成特定形状。最后，将三联板单元通过冲压的方式分开，得到具有所述绝缘层214和所述电路布线204的所述电路基板202。Here, the formation of the aluminum substrate with appropriate size is formed by directly processing the 1m×1m aluminum material. The gong knife is made of high-speed steel, and the motor uses a speed of 5000 rpm. The plane is cut at right angles, which can make the edge of 1100 aluminum material at right angles, and the burr is less than 10 microns. It can also be etched into a specific shape by chemical reaction through etching tools, or it can be formed into a specific shape by V-CUT and stamping methods. . Finally, the triple board unit is separated by punching to obtain the circuit substrate 202 having the insulating layer 214 and the circuit wiring 204 .

在对抗氧化和硬度要求很高的场合，可以通过电镀金或化学沉金的方式，在所述电路布线204表面形成金层。In occasions where high requirements on oxidation resistance and hardness are required, a gold layer can be formed on the surface of the circuit wiring 204 by means of electroplating gold or chemical immersion gold.

在此，用于制造所述电路布线204的铜板的厚度应该不小于2盎司，保证有足够的电流通流能力。Here, the thickness of the copper plate used to manufacture the circuit wiring 204 should not be less than 2 ounces to ensure sufficient current flow capacity.

在此，有时也用V-CUT+冲压方式将所述三联板单元分开，先进行V-CUT，使型材连接的厚度减薄，可避免所述绝缘层214在冲压时发生裂损和形变，从而提高智能功率模块的可靠性。Here, V-CUT+stamping is sometimes used to separate the triple plate unit, and V-CUT is performed first to reduce the thickness of the profile connection, which can avoid cracking and deformation of the insulating layer 214 during stamping, thereby Improve the reliability of intelligent power modules.

在此，因为不再需要邦定线工序，所述电路布线204上也不再具备邦定点，因此，对于相同的电路功能，所述电路基板202的面积可以缩小，现有技术的电路基板大小一般设计为64mm×30mm，而本实施例的电路基板设计为50mm×25mm，体现了不需要邦定线后的小型化效果。Here, because the bonding wire process is no longer required, the circuit wiring 204 no longer has bonding points, therefore, for the same circuit function, the area of the circuit substrate 202 can be reduced, and the size of the circuit substrate in the prior art can be reduced. The general design is 64mm×30mm, but the circuit substrate of this embodiment is designed to be 50mm×25mm, reflecting the effect of miniaturization without bonding wires.

(2)步骤804，制成独立的带镀层的引脚(2) Step 804, making independent pins with plating

如图4A所示，每个引脚206都是用铜基材，制成长度C为25毫米，宽度K为1.5毫米，厚度H为1毫米的长条状；在此，为便于装配，如图4B所示，在其中一端压制出一定的弧度。As shown in Figure 4A, each pin 206 is made of copper base material, and the length C is 25 mm, the width K is 1.5 mm, and the thickness H is 1 mm; here, for ease of assembly, as As shown in Fig. 4B, a certain arc is pressed at one end.

然后，通过化学镀的方法形成镍层：通过镍盐和次亚磷酸钠混合溶液，并添加了适当的络合剂，在已形成特定形状的铜材表面形成镍层，在金属镍具有很强的钝化能力，能迅速生成一层极薄的钝化膜，能抵抗大气、碱和某些酸的腐蚀。镀镍结晶极细小，镍层厚度一般为0.1微米；Then, the nickel layer is formed by electroless plating: through the mixed solution of nickel salt and sodium hypophosphite, and adding an appropriate complexing agent, a nickel layer is formed on the surface of the copper material that has formed a specific shape. Excellent passivation ability, can quickly form a very thin passivation film, can resist the corrosion of atmosphere, alkali and some acids. The crystals of nickel plating are extremely small, and the thickness of the nickel layer is generally 0.1 microns;

接着通过酸性硫酸盐工艺，在室温下将已形成形状和镍层的铜材浸在带有正锡离子的镀液中通电，在镍层表面形成镍锡合金层，镍层厚度一般控制在5微米，镍层的形成极大提高了可焊性；到此，所述引脚206制造完成。Then, through the acid sulfate process, the copper material that has formed the shape and nickel layer is immersed in the plating solution with positive tin ions at room temperature and energized to form a nickel-tin alloy layer on the surface of the nickel layer. The thickness of the nickel layer is generally controlled at 5 Micron, the formation of the nickel layer greatly improves the solderability; so far, the manufacturing of the pin 206 is completed.

在此，本实施例中的引脚206是一个个单独的引脚，引脚206被固定在的所述电路布线204仅通过树脂部分包裹固定，抗冲击强度有限，单独的引脚避免了切除加强筋的工序，能够降低对智能功率模块的系统性冲击。当然，为了引脚装配方便，可仍使用整排引脚的形式。Here, the pins 206 in this embodiment are individual pins, and the circuit wiring 204 on which the pins 206 are fixed is only partially wrapped and fixed by resin, so the impact resistance is limited, and the individual pins avoid cutting The ribbing process can reduce the systemic impact on the intelligent power module. Of course, for the convenience of pin assembly, the whole row of pins can still be used.

(3)步骤806，在电路布线表面倒装元器件和配置引脚(3) Step 806, flip-chip components and configure pins on the circuit wiring surface

本工序是在所述电路布线204表面倒装所述元器件208和配置所述引脚206的工序。This step is a step of flip-chipping the components 208 on the surface of the circuit wiring 204 and arranging the pins 206 .

如图5A和图5B所示，首先，制作出底板50，所述底板50可以使用高强度的不锈钢制作而成，也可考虑使用合成石作为材料。As shown in FIG. 5A and FIG. 5B , firstly, a bottom plate 50 is produced, and the bottom plate 50 can be made of high-strength stainless steel, and synthetic stone can also be considered as a material.

其次，将制作好的电路布线204通过锡膏印刷机，使用钢网，对所述电路布线204的特定位置进行锡膏涂装，钢网可使用0.13mm的厚度。将在所述电路布线204上涂敷好锡膏的电路基板202放置在所述底板50上，通过SMT机或DA机等设备，进行元器件208和引脚206的安装，所述元器件208可直接倒装在所述电路布线204的特定位置，而引脚206则一端要安放在所述引脚焊盘2042上，另一端需要底板50进行固定。Secondly, the prepared circuit wiring 204 is passed through a solder paste printing machine, and a stencil is used to coat a specific position of the circuit wiring 204 with solder paste, and the thickness of the stencil can be 0.13 mm. The circuit substrate 202 coated with solder paste on the circuit wiring 204 is placed on the base plate 50, and the components 208 and pins 206 are installed through equipment such as an SMT machine or a DA machine. The components 208 It can be directly flipped on a specific position of the circuit wiring 204 , while one end of the pin 206 should be placed on the pin pad 2042 , and the other end needs to be fixed by the base plate 50 .

然后，放于所述底板50上的所述电路基板202通过回流焊，锡膏固化，所述元器件208和所述引脚206被固定。在此，回流温度一般不超过300℃。Then, the circuit substrate 202 placed on the base plate 50 is reflowed, the solder paste is solidified, and the components 208 and the pins 206 are fixed. Here, the reflux temperature generally does not exceed 300°C.

(4)步骤808，密封树脂密封电路基板(4) Step 808, sealing the circuit board with sealing resin

首先，在无氧环境中对固定有元器件208和引脚206的所述电路基板202进行烘烤，烘烤时间不应小于2小时，烘烤温度和选择125℃。Firstly, bake the circuit substrate 202 on which the components 208 and pins 206 are fixed in an oxygen-free environment, the baking time should not be less than 2 hours, and the baking temperature should be 125°C.

如图6A所示，将所述电路基板202搬送到塑封模型中(塑封模型包括上模61及下模62)。通过使引脚206的特定部分与固定装置63接触、所述电路基板202的底部与配置在所述下模62上的顶针64接触，所述引脚206进行所述电路基板202的前后定位、所述顶针64进行所述电路基板202的上下定位。As shown in FIG. 6A , the circuit substrate 202 is transported into a plastic packaging mold (the plastic packaging mold includes an upper mold 61 and a lower mold 62 ). By making a specific part of the pin 206 contact the fixing device 63, and the bottom of the circuit substrate 202 contact the thimble 64 disposed on the lower mold 62, the pin 206 performs front and rear positioning of the circuit substrate 202, The ejector pins 64 are used for positioning the circuit substrate 202 up and down.

合模时，在形成于塑料模具内部的模腔中放置电路基板202，然后由浇口65注入密封树脂。进行密封的方法可采用热硬性树脂的传递模模制或使用热硬性树脂的注入模模制。而且，自浇口65注入的密封树脂模腔内部的气体通过排气口66排放到外部；在此，所述上模61的特定位置有凸起部67，特定位置对应所述元器件208中的功率元件2082的位置，使所述上模61与功率元件2082的距离很近，注塑压力需要适当调高，因为本实施例中的智能功率模块无邦定线，不存在冲线的风险，所以注塑压力的调高不影响智能功率模块的品质。When closing the mold, the circuit board 202 is placed in the cavity formed inside the plastic mold, and then the sealing resin is injected through the gate 65 . A method of performing sealing may employ transfer molding of a thermosetting resin or injection molding using a thermosetting resin. Moreover, the gas inside the sealing resin mold cavity injected from the gate 65 is discharged to the outside through the exhaust port 66; The position of the power element 2082 makes the distance between the upper mold 61 and the power element 2082 very close, and the injection pressure needs to be increased appropriately, because the intelligent power module in this embodiment has no bonding wire, and there is no risk of breaking the line. Therefore, increasing the injection pressure does not affect the quality of the smart power module.

在此，所述上模61和所述下模62不与智能功率模块产生接触，为了便于智能功率模块在模腔中的定位，有时也使用在所述上模61配置顶针的方式，对智能功率模块在模腔中的位置进行定位，在本实施例中出于最大程度提高模块致密性考虑，未为上模61配置顶针，仅在下模62配置了顶针。Here, the upper mold 61 and the lower mold 62 do not come into contact with the smart power module. In order to facilitate the positioning of the smart power module in the mold cavity, sometimes an ejector pin is used on the upper mold 61 to control the smart power module. The position of the power module in the mold cavity is determined. In this embodiment, in order to maximize the compactness of the module, the upper mold 61 is not equipped with thimbles, and only the lower mold 62 is equipped with thimbles.

脱模后，整个所述电路基板202被所述封装外壳完全包裹，如果所述密封树脂溢胶严重，可以通过追加一个激光除溢胶或研磨除溢胶的工序。After demoulding, the entire circuit substrate 202 is completely wrapped by the packaging shell. If the sealing resin overflows seriously, an additional process of laser or grinding can be added to remove the overflow.

(5)步骤810，配置散热片、引脚成型和模块功能测试(5) Step 810, configure heat sink, pin forming and module function test

本工序为进行所述散热片镶嵌、所述引脚成型和智能功率模块功能测试的工序This process is the process of inlaying the heat sink, forming the pins and testing the function of the intelligent power module

在前工序中，所述封装外壳210的上表面有凹陷，具有特定形状的金属散热片212预先准备好，为根据所述上模61突出的形状制作，可以考虑制作成比所述上模61的凸起部67的几何尺寸小0.1微米；在所述凹陷处注入硅胶，然后将所述散热片212安放在凹陷中，如果有硅胶溢出，可考虑增加清洁硅胶的工序，如果硅胶溢出不严重，一般不作清洁，硅胶的外露一般不会对智能功率模块的使用造成影响。In the previous process, the upper surface of the package shell 210 has a depression, and the metal heat sink 212 with a specific shape is prepared in advance, and is made according to the protruding shape of the upper mold 61. The geometric size of the protrusion 67 is 0.1 micron smaller; inject silica gel into the depression, and then place the heat sink 212 in the depression. If there is silica gel overflow, consider increasing the process of cleaning silica gel. If the silica gel overflow is not serious , generally do not clean, and the exposure of silica gel generally does not affect the use of intelligent power modules.

如图7所示，在前工序即传递模模装工序使除引脚206以外的其他部分都被树脂密封。本工序根据使用的长度和形状需要，例如，在虚线71的位置将外部引脚206折弯成一定形状，便于后续装配。As shown in FIG. 7, the parts other than the lead 206 are resin-sealed in the previous process, that is, the transfer molding process. In this process, according to the length and shape required, for example, the external pin 206 is bent into a certain shape at the position of the dotted line 71 to facilitate subsequent assembly.

然后将智能功率模块放入测试设备中，进行常规的电参数测试，若所述引脚206相互独立，成型后可能会有部分引脚不在同一水平面上，影响接触，所以一般需要先进行测试机金手指与引脚的接触测试，如果接触测试不通过，需要对所述引脚206进行修调处理，直到接触测试通过后，再进行电气特性测试，包括绝缘耐压、静态功耗、迟延时间等测试项目，测试合格者为成品。Then put the intelligent power module into the test equipment, and conduct conventional electrical parameter tests. If the pins 206 are independent of each other, some pins may not be on the same level after molding, which will affect the contact. The contact test between the golden finger and the pin, if the contact test fails, the pin 206 needs to be trimmed until the contact test is passed, and then the electrical characteristic test, including insulation withstand voltage, static power consumption, and delay time And other test items, those who pass the test are finished products.

利用上述工序，完成本实施例的智能功率模块200。Using the above steps, the smart power module 200 of this embodiment is completed.

实施例二：Embodiment two:

以下结合图2A、图2C、图2E、图2F、图3A、图3B、图4A、图4B、图5A、图5B、图6B、图7和图8对本发明的技术方案作进一步说明。2A, 2C, 2E, 2F, 3A, 3B, 4A, 4B, 5A, 5B, 6B, 7 and 8, the technical solution of the present invention will be further described.

如图2A、图2C、图2E和图2F所示，智能功率模块200包括：电路基板202，所述电路基板202的上表面设置有电路布线204(其中，电路基板上还设置有绝缘层214，绝缘层214形成于电路基板202的上表面，所述电路布线204位于所述绝缘层214上)；多个器件引脚206，所述器件引脚206与所述电路布线204电连接；多个元器件208，所述多个元器件208倒装在所述电路布线204上；封装外壳210，完全包覆所述电路基板202的上表面、所述电路布线204和所述多个元器件208，其中，所述封装外壳210在所述多个元器件208中的功率器件2082位置处形成有凹槽，所述器件引脚206自所述封装外壳210的内侧向外侧伸出，所述电路基板202的下表面裸露；散热组件212，设置在所述凹槽中，所述散热组件212用于对所述功率器件2082进行散热。As shown in FIG. 2A, FIG. 2C, FIG. 2E and FIG. 2F, the intelligent power module 200 includes: a circuit substrate 202, and the upper surface of the circuit substrate 202 is provided with a circuit wiring 204 (wherein, an insulating layer 214 is also provided on the circuit substrate. , the insulating layer 214 is formed on the upper surface of the circuit substrate 202, the circuit wiring 204 is located on the insulating layer 214); a plurality of device pins 206, the device pins 206 are electrically connected to the circuit wiring 204; A component 208, the plurality of components 208 are flip-chip on the circuit wiring 204; a packaging shell 210, completely covering the upper surface of the circuit substrate 202, the circuit wiring 204 and the plurality of components 208, wherein, the packaging shell 210 is formed with a groove at the position of the power device 2082 in the plurality of components 208, and the device pins 206 protrude from the inside to the outside of the packaging shell 210, the The lower surface of the circuit substrate 202 is exposed; the heat dissipation component 212 is disposed in the groove, and the heat dissipation component 212 is used for dissipating heat from the power device 2082 .

通过倒装方式使元器件，包括中小功率电路元件形成电连接，不再需要金属邦定线，节省了成本；将模块所有元素用树脂密封，最大限度提高抗水气进入效果，即使外部湿气内侵，因为已不存在金属线，已难以构成腐蚀。在功率器件的位置导热性较低的树脂特别薄并且外置导热性较高的散热组件，极大改善了功率器件的散热坏境，使功率器件可以工作在低结温下，使功率器件的降额使用成为可能，降低了智能功率模块的物料成本。其中，电路基板的下表面裸露，能够进一步提高智能功率模块的散热性。Components, including small and medium power circuit components, are electrically connected by flip-chip, and metal bonding wires are no longer needed, which saves costs; all elements of the module are sealed with resin to maximize the anti-moisture ingress effect, even if external moisture Intrusion, because there are no metal lines, it is difficult to form corrosion. The resin with low thermal conductivity is particularly thin at the position of the power device and the heat dissipation component with high thermal conductivity is installed outside, which greatly improves the heat dissipation environment of the power device, enables the power device to work at a low junction temperature, and makes the power device Derating is possible, reducing the material cost of intelligent power modules. Wherein, the lower surface of the circuit substrate is exposed, which can further improve the heat dissipation of the intelligent power module.

根据本发明的上述实施例的智能功率模块200，还可以具有以下技术特征：The intelligent power module 200 according to the above-mentioned embodiments of the present invention may also have the following technical features:

根据本发明的一个实施例，所述电路布线204包括引脚焊盘2042，所述器件引脚206安装在所述引脚焊盘2042上。According to an embodiment of the present invention, the circuit wiring 204 includes a pin pad 2042 on which the device pin 206 is mounted.

引脚可以是一个个单独的引脚，引脚固定在引脚焊盘上，制造过程中无需切除加强筋的工序，能够降低对智能功率模块的系统性冲击，当然，引脚也可以是整排的形式，便于引脚的安装。The pins can be individual pins, and the pins are fixed on the pads of the pins. There is no need to cut off the ribs during the manufacturing process, which can reduce the systemic impact on the intelligent power module. Of course, the pins can also be integral The form of the row is convenient for the installation of the pins.

根据本发明的第一方面的实施例，还包括：焊接层(图中未示出)，设置在所述电路布线与所述多个元器件之间以及在所述引脚焊盘和所述器件引脚之间。According to an embodiment of the first aspect of the present invention, it also includes: a soldering layer (not shown in the figure), arranged between the circuit wiring and the plurality of components and between the pin pad and the between device pins.

根据本发明的第一方面的实施例，所述散热组件212粘接在所述凹槽中。According to an embodiment of the first aspect of the present invention, the heat dissipation component 212 is bonded in the groove.

散热组件可通过粘胶粘接在凹槽中，其中，粘胶可以是硅胶或其他胶。The heat dissipation component can be bonded in the groove by adhesive, wherein the adhesive can be silica gel or other adhesives.

根据本发明的第一方面的实施例，所述散热组件212包括散热片。According to an embodiment of the first aspect of the present invention, the heat dissipation component 212 includes heat dissipation fins.

根据本发明的第一方面的实施例，所述散热片的高度与所述凹槽的深度相同，所述散热片的顶部形成所述封装外壳表面的一部分。According to an embodiment of the first aspect of the present invention, the height of the heat sink is the same as the depth of the groove, and the top of the heat sink forms a part of the surface of the package.

散热片的高度与凹槽的深度相同，以确保散热片在放入凹槽后，散热片的顶部可与封装外壳表面相平且裸露。The height of the heat sink is the same as the depth of the groove, so as to ensure that the top of the heat sink can be flat and exposed to the surface of the package after the heat sink is placed in the groove.

根据本发明的第一方面的实施例，还包括：合金层(图中未示出)，设于所述器件引脚206的表层，所述合金层的厚度范围为0.1～10微米。According to the embodiment of the first aspect of the present invention, it further includes: an alloy layer (not shown in the figure) provided on the surface layer of the device pin 206, and the thickness of the alloy layer is in the range of 0.1-10 microns.

通过在引脚的表层设置合金层，既降低引脚被腐蚀的可能性，又可提高引脚在焊接过程的粘附性。其中，合金层可以包括0.1微米的镍层，可以采用电镀或化学镀的方式形成镍层，其具备较强的钝化能力，能够抵抗大气、碱性物质和酸性物质的腐蚀，降低引脚被腐蚀断路的可能性，且镍层有助于提高引脚的焊接性。By setting the alloy layer on the surface of the pin, the possibility of the pin being corroded can be reduced, and the adhesion of the pin during the welding process can be improved. Among them, the alloy layer can include a nickel layer of 0.1 micron, and the nickel layer can be formed by electroplating or electroless plating, which has a strong passivation ability, can resist the corrosion of the atmosphere, alkaline substances and acidic substances, and reduces the damage of pins. The possibility of corrosion open circuit, and the nickel layer helps to improve the solderability of the pins.

根据本发明的第一方面的实施例，所述合金层的厚度为5微米。According to an embodiment of the first aspect of the present invention, the thickness of the alloy layer is 5 microns.

根据本发明的第一方面的实施例，所述电路布线204的厚度大于或等于0.07毫米。According to an embodiment of the first aspect of the present invention, the thickness of the circuit wiring 204 is greater than or equal to 0.07 mm.

根据本发明的实施例的智能功率模块200的制备方法包括：在电路基板202的上表面形成电路布线204，其中，所述电路布线204包括引脚焊盘2042；形成多个器件引脚206；在所述电路布线204上倒装元器件208，以及在所述引脚焊盘2042上焊接所述器件引脚206；对形成有所述电路布线204、所述元器件208及所述器件引脚206的所述电路基板202进行封装，以形成封装外壳210，其中，所述封装外壳210完全包覆所述电路基板202的上表面、所述电路布线204和所述元器件208，所述封装外壳210在所述元器件208中的功率器件2082位置处形成有凹槽，所述器件引脚206自所述封装外壳210的内侧向外侧伸出，所述电路基板202的下表面裸露；在所述凹槽中安装散热组件212。The manufacturing method of the intelligent power module 200 according to the embodiment of the present invention includes: forming circuit wiring 204 on the upper surface of the circuit substrate 202, wherein the circuit wiring 204 includes pin pads 2042; forming a plurality of device pins 206; Flip-chip components 208 on the circuit wiring 204, and weld the device pin 206 on the pin pad 2042; The circuit substrate 202 of the pin 206 is packaged to form a package shell 210, wherein the package shell 210 completely covers the upper surface of the circuit substrate 202, the circuit wiring 204 and the components 208, the The package shell 210 is formed with a groove at the position of the power device 2082 in the component 208, the device pin 206 protrudes from the inside of the package shell 210 to the outside, and the lower surface of the circuit substrate 202 is exposed; The heat dissipation component 212 is installed in the groove.

在制造智能功率模块过程中，元器件直接倒装在电路布线上，免去了金属线邦定和清洗工序，进一步提高了智能功率模块的可靠性，而且还节省了设备投入，提高了生产效率，降低了工艺管控要求，使智能功率模块的制造难度大幅下降，制造良率得到提高，进一步降低了智能功率模块的成本，功率器件对应的散热片外置处理，不再对焊接空洞率提出要求，降低了对焊接设备技术要求和工艺管控要求，进一步降低智能功率模块的制造成本。其中，电路基板的下表面裸露，能够进一步提高智能功率模块的散热性。In the process of manufacturing smart power modules, the components are directly flipped on the circuit wiring, eliminating the need for metal wire bonding and cleaning processes, further improving the reliability of smart power modules, saving equipment investment, and improving production efficiency , which reduces the process control requirements, greatly reduces the difficulty of manufacturing smart power modules, improves the manufacturing yield, and further reduces the cost of smart power modules. The heat sink corresponding to the power device is externally treated, and no longer requires soldering voids. , which reduces the technical requirements for welding equipment and process control requirements, and further reduces the manufacturing cost of intelligent power modules. Wherein, the lower surface of the circuit substrate is exposed, which can further improve the heat dissipation of the intelligent power module.

根据本发明的上述实施例的智能功率模块的制备方法，还可以具有以下技术特征：The method for preparing an intelligent power module according to the above-mentioned embodiments of the present invention may also have the following technical features:

根据本发明的一个实施例，所述在电路基板202的上表面形成电路布线的步骤，具体包括：采用冲压工艺或刻蚀工艺在所述电路基板202的上表面形成所述电路布线204。According to an embodiment of the present invention, the step of forming the circuit wiring on the upper surface of the circuit substrate 202 specifically includes: forming the circuit wiring 204 on the upper surface of the circuit substrate 202 by using a stamping process or an etching process.

根据本发明的一个实施例，所述在所述电路布线上倒装元器件，以及在所述引脚焊盘上焊接所述器件引脚的步骤，具体包括：采用锡膏印刷机及钢网在所述电路布线204形成焊接层，其中，包括在所述引脚焊盘2042上形成所述焊接层；将所述元器件208通过所述焊接层倒装在所述电路布线204上；将所述器件引脚206的一端通过所述焊接层组装至所述引脚焊盘2042上。According to an embodiment of the present invention, the step of flipping the components on the circuit wiring and soldering the device pins on the pin pads specifically includes: using a solder paste printing machine and a stencil Forming a welding layer on the circuit wiring 204, including forming the welding layer on the pin pad 2042; flip-chip the component 208 on the circuit wiring 204 through the welding layer; One end of the device pin 206 is assembled to the pin pad 2042 through the solder layer.

可采用锡膏印刷机及钢网在电路布线形成焊接层，也即对电路布线的特定位置进行锡膏涂装，钢网的厚度可选用0.13毫米。A solder paste printing machine and a steel mesh can be used to form a soldering layer on the circuit wiring, that is, solder paste coating is performed on a specific position of the circuit wiring. The thickness of the steel mesh can be selected to be 0.13mm.

根据本发明的一个实施例，所述对形成有所述电路布线、所述元器件及所述器件引脚的所述电路基板进行封装，以形成封装外壳的步骤，具体包括：在无氧环境中，采用目标烘烤温度对形成有所述电路布线204、所述元器件208及所述器件引脚206的所述电路基板202进行持续目标时长的烘烤；将烘烤后的形成有所述电路布线204、所述元器件208及所述器件引脚206的所述电路基板206放置于塑封模具中，其中，所述塑料模具包括上模和下模，所述上模形成有凸起部，所述元器件208中的功率器件2082位于所述凸起部下方、且与所述凸起部之间存在间隙；通过所述塑封模具的浇口注入密封树脂，以形成所述封装外壳210，其中，所述封装外壳210基于所述凸起部形成所述凹槽，所述封装外壳不对所述电路基板202的下表面进行密封。According to an embodiment of the present invention, the step of packaging the circuit substrate formed with the circuit wiring, the components and the device pins to form a packaging shell specifically includes: In the process, the target baking temperature is used to bake the circuit substrate 202 formed with the circuit wiring 204, the components 208 and the device pins 206 for a target duration; The circuit wiring 204, the components 208 and the circuit substrate 206 of the device pin 206 are placed in a plastic sealing mold, wherein the plastic mold includes an upper mold and a lower mold, and the upper mold is formed with a protrusion part, the power device 2082 in the component device 208 is located below the raised part, and there is a gap between the raised part; the sealing resin is injected through the gate of the plastic sealing mold to form the packaging shell 210 , wherein the encapsulation shell 210 forms the groove based on the protrusion, and the encapsulation shell does not seal the lower surface of the circuit substrate 202 .

目标烘烤温度可选用125℃，目标时长大于或等于2小时，可使用热硬性树脂的传递模模制或使用热硬性树脂的注入模模制来进行密封，上模的凸起部与功率器件的距离比较近，需要适当调高注塑压力，由于不存在邦定线，不存在冲线的风险，所以注塑压力的调高不影响智能功率模块的品质。The target baking temperature can be selected at 125°C, and the target duration is greater than or equal to 2 hours. It can be sealed by transfer molding of thermosetting resin or injection molding of thermosetting resin. The convex part of the upper mold is connected with the power device. If the distance is relatively short, it is necessary to increase the injection pressure appropriately. Since there is no bonding line, there is no risk of punching the line, so the increase in injection pressure will not affect the quality of the intelligent power module.

根据本发明的一个实施例，所述在所述凹槽中安装散热组件的步骤，具体包括：向所述凹槽中注入粘胶，并将所述散热组件212镶嵌在所述凹槽中。According to an embodiment of the present invention, the step of installing the heat dissipation component in the groove specifically includes: injecting glue into the groove, and embedding the heat dissipation component 212 in the groove.

粘胶可以是硅胶或其他胶，散热组件的高度可与凹槽的深度相同，以确保散热组件在放入凹槽后，散热组件的顶部可与封装外壳表面相平且裸露。The adhesive can be silicone or other glues, and the height of the heat dissipation component can be the same as the depth of the groove, so as to ensure that after the heat dissipation component is placed in the groove, the top of the heat dissipation component can be flat and exposed to the surface of the package shell.

其中，电路基板202是采用1050、5052等材质的铝构成的矩形板材。在此，为了降低成本，可以使用1050的铝材，为了提高硬度，可以选择5052的铝材；为了提高耐压和硬度，可以对铝材进行阳极氧化处理，为了提高散热性，也可以不作阳极氧化。电路基板102的厚度可以设计为1.5毫米～2.0毫米。Wherein, the circuit substrate 202 is a rectangular plate made of 1050, 5052 and other aluminum materials. Here, in order to reduce the cost, you can use 1050 aluminum material, and in order to increase the hardness, you can choose 5052 aluminum material; in order to improve the pressure resistance and hardness, the aluminum material can be anodized, and in order to improve heat dissipation, it is not necessary to make an anode oxidation. The thickness of the circuit substrate 102 can be designed to be 1.5mm-2.0mm.

位于所述电路基板202其中一个表面(本实施例中以上表面为例进行说明)的绝缘层214是可以设计为厚度100微米～200微米，使用稳态热流法测得的热导率应在2W/(m×K)～3W/(m×K)为宜，在此，为了节省成本并提高导热性，可以绝缘层214的厚度选择100微米，为了提高耐压，可以选择200微米的厚度，绝缘层214的厚度一般不应超过200微米，在此，绝缘层的厚度选择得越厚，热导率应该相应选择得越高。The insulating layer 214 located on one of the surfaces of the circuit substrate 202 (the above surface is taken as an example in this embodiment) can be designed to have a thickness of 100 microns to 200 microns, and the thermal conductivity measured by the steady-state heat flow method should be within 2W. /(m×K)～3W/(m×K) is suitable. Here, in order to save cost and improve thermal conductivity, the thickness of the insulating layer 214 can be selected as 100 microns, and in order to improve the withstand voltage, the thickness of 200 microns can be selected. The thickness of the insulating layer 214 should generally not exceed 200 microns. Here, the thicker the thickness of the insulating layer is selected, the higher the thermal conductivity should be selected accordingly.

所述电路布线204由厚度为2盎司以上的铜材通过冲压或刻蚀的形式制作而成，为了防止氧化，所述电路布线204的上表面可以进行镀金处理，为了成本，所述电路布线204的上表面也可以进行镀银处理，或者通过真空或充氮包装进行运输，上表面不作处理。The circuit wiring 204 is made of copper with a thickness of more than 2 ounces by stamping or etching. In order to prevent oxidation, the upper surface of the circuit wiring 204 can be gold-plated. For cost, the circuit wiring 204 The upper surface can also be silver-plated, or it can be shipped in vacuum or nitrogen-filled packaging without treatment on the upper surface.

在此，所述电路布线204的至少一个边缘上，有用于配置下述引脚的特殊的电路布线，称为引脚焊盘2042。Here, on at least one edge of the circuit wiring 204, there is a special circuit wiring for disposing the following pins, which is called a pin pad 2042 .

所述元器件208被倒装固定在所述电路布线204上。所述元器件208采用晶体管或二极管等有源元件、或者电容或电阻等无源元件，另外，还具有功率元件等发热量大的IGBT(Insulated Gate Bipolar Translator，绝缘栅门极晶体管)、FRD(Fast Recovery Diode，快速恢复二极管)、MOS(Metal Oxide Semiconductor，金属氧化物半导体)场效应管等，在此，这些功率元件一般不应超过5A/600V的额定工作电流和电压，并且使用平面结构，如IGBT管，必须使用LIGBT(Lateral Insulated Gate Bipolar Translator，横向绝缘栅门极晶体管)。The component 208 is flip-chip fixed on the circuit wiring 204 . The components 208 adopt active components such as transistors or diodes, or passive components such as capacitors or resistors. In addition, there are also IGBT (Insulated Gate Bipolar Translator, Insulated Gate Bipolar Translator), FRD ( Fast Recovery Diode, fast recovery diode), MOS (Metal Oxide Semiconductor, metal oxide semiconductor) field effect transistor, etc. Here, these power components should generally not exceed the rated operating current and voltage of 5A/600V, and use a planar structure. For example, IGBT tubes must use LIGBT (Lateral Insulated Gate Bipolar Translator, lateral insulated gate transistor).

所述引脚206被固定在所述引脚焊盘2042上。The pins 206 are fixed on the pin pads 2042 .

在此，设计成一边上设有多条引脚206，其具有例如与外部进行输入、输出的作用。引脚206和引脚焊盘2042通过焊锡等导电性粘结剂焊接。Here, it is designed that a plurality of pins 206 are provided on one side, for example, for input and output with the outside. The pins 206 and the pin pads 2042 are bonded with a conductive adhesive such as solder.

所述引脚206一般采用铜等金属制成，铜表面通过化学镀和电镀形成一层镍锡合金层，合金层的厚度一般为5微米，镀层可保护铜不被腐蚀氧化，并可提高可焊接性。The pin 206 is generally made of copper and other metals, and the copper surface forms a layer of nickel-tin alloy layer through chemical plating and electroplating. The thickness of the alloy layer is generally 5 microns, and the plating layer can protect copper from corrosion and oxidation, and can improve Weldability.

所述封装外壳(可为树脂材料)210可通过传递模方式使用热硬性树脂模制也可使用注入模方式使用热塑性树脂模制。在此，所述封装外壳210完全密封电路布线204的一面上的所有元器件208，包括功率元件2082；在此，所述电路基板202下表面未被所述树脂覆盖，使智能功率模块的散热能力得以提高；在此，因为所述功率元件2082也被所述封装外壳210完全密封，所以，所述封装外壳210一般应该选择角型结晶较多的材料，以提高其热导率，可以考虑选择松下的3300系列或日立的3600系列；另外，为了保证所述智能功率模块的可靠性，所述封装外壳210的漏电起痕能力不应低于500V；在此，所述封装外壳210密封智能功率模块正面的部分不是规则平坦的，而是在覆盖功率元件2082的位置存在凹陷，使所述封装外壳210密封这些特定功率元件2082的部分非常薄；在凹陷的位置配置有金属散热片212，所述金属散热片212的高度与凹陷的深度一致，所以所述散热片212镶嵌到凹陷后，所述散热片212的顶部与所述封装外壳210的顶部相平，所述金属散热片212可使用表面镀镍的铜材，也可以使用表面阳极氧化的铝材。The package case (which may be a resin material) 210 can be molded with a thermosetting resin by transfer molding or can be molded with a thermoplastic resin by injection molding. Here, the packaging shell 210 completely seals all the components 208 on one side of the circuit wiring 204, including the power element 2082; here, the lower surface of the circuit substrate 202 is not covered by the resin, so that the heat dissipation of the intelligent power module ability can be improved; here, because the power element 2082 is also completely sealed by the package shell 210, so the package shell 210 should generally choose a material with more angular crystals to improve its thermal conductivity, it can be considered Choose Panasonic’s 3300 series or Hitachi’s 3600 series; in addition, in order to ensure the reliability of the intelligent power module, the tracking capability of the packaging shell 210 should not be lower than 500V; here, the packaging shell 210 is sealed with a smart The front part of the power module is not regular and flat, but there is a depression at the position covering the power components 2082, so that the part of the packaging shell 210 sealing these specific power components 2082 is very thin; a metal heat sink 212 is arranged at the concave position, The height of the metal heat sink 212 is consistent with the depth of the recess, so after the heat sink 212 is embedded in the recess, the top of the heat sink 212 is level with the top of the package shell 210, and the metal heat sink 212 can be Use nickel-plated copper or anodized aluminum.

如图8所示，智能功率模块200的制备方法包括：As shown in FIG. 8, the preparation method of the intelligent power module 200 includes:

(1)步骤802，在大小合适的铜板上形成电路布线(1) Step 802, forming circuit wiring on a copper plate of appropriate size

如图3A和3B所示，根据需要的电路布局设计大小合适的电路基板202，对于一般的智能功率模块，一枚的大小可选取50mm×25mm，三枚的短边相连的大小为50mm×75mm，形成一个由三枚智能功率模块金属电路基板202组成的三联板单元，对两面进行防蚀处理。在铝基板的表面上设有绝缘层214。另外，在绝缘层214的表面粘贴有作为电路布线204的铜箔。然后将该工序制造的铜箔进行蚀刻，局部地除去铜箔，形成所述电路布线204及所述引脚焊盘2042。As shown in Figures 3A and 3B, design a circuit substrate 202 with a suitable size according to the required circuit layout. For a general intelligent power module, the size of one piece can be selected as 50mm×25mm, and the size of the three connected short sides is 50mm×75mm , forming a triple board unit composed of three metal circuit boards 202 of the intelligent power module, and performing anti-corrosion treatment on both sides. An insulating layer 214 is provided on the surface of the aluminum substrate. In addition, a copper foil as the circuit wiring 204 is pasted on the surface of the insulating layer 214 . Then, the copper foil produced in this step is etched to partially remove the copper foil, thereby forming the circuit wiring 204 and the lead pad 2042 .

在此，大小合适的铝基板的形成是通过直接对1m×1m的铝材进行锣板处理的方式形成，锣刀使用高速钢作为材质，马达使用5000转/分钟的转速，锣刀与铝材平面呈直角下刀，可以使1100铝材的边缘呈直角，毛刺小于10微米，也可通过蚀刻工具，通过化学反应刻蚀出特定的形状，也可以通过V-CUT和冲压的方法形成特定形状。最后，将三联板单元通过冲压的方式分开，得到具有所述绝缘层214和所述电路布线204的所述电路基板202。Here, the formation of the aluminum substrate with appropriate size is formed by directly processing the 1m×1m aluminum material. The gong knife is made of high-speed steel, and the motor uses a speed of 5000 rpm. The plane is cut at right angles, which can make the edge of 1100 aluminum material at right angles, and the burr is less than 10 microns. It can also be etched into a specific shape by chemical reaction through etching tools, or it can be formed into a specific shape by V-CUT and stamping methods. . Finally, the triple board unit is separated by punching to obtain the circuit substrate 202 having the insulating layer 214 and the circuit wiring 204 .

在对抗氧化和硬度要求很高的场合，可以通过电镀金或化学沉金的方式，在所述电路布线204表面形成金层。In occasions where high requirements on oxidation resistance and hardness are required, a gold layer can be formed on the surface of the circuit wiring 204 by means of electroplating gold or chemical immersion gold.

在此，用于制造所述电路布线204的铜板的厚度应该不小于2盎司，保证有足够的电流通流能力。Here, the thickness of the copper plate used to manufacture the circuit wiring 204 should not be less than 2 ounces to ensure sufficient current flow capacity.

在此，有时也用V-CUT+冲压方式将所述三联板单元分开，先进行V-CUT，使型材连接的厚度减薄，可避免所述绝缘层214在冲压时发生裂损和形变，从而提高智能功率模块的可靠性。Here, V-CUT+stamping is sometimes used to separate the triple plate unit, and V-CUT is performed first to reduce the thickness of the profile connection, which can avoid cracking and deformation of the insulating layer 214 during stamping, thereby Improve the reliability of intelligent power modules.

在此，因为不再需要邦定线工序，所述电路布线204上也不再具备邦定点，因此，对于相同的电路功能，所述电路基板202的面积可以缩小，现有技术的电路基板大小一般设计为64mm×30mm，而本实施例的电路基板设计为50mm×25mm，体现了不需要邦定线后的小型化效果。Here, because the bonding wire process is no longer required, the circuit wiring 204 no longer has bonding points, therefore, for the same circuit function, the area of the circuit substrate 202 can be reduced, and the size of the circuit substrate in the prior art can be reduced. The general design is 64mm×30mm, but the circuit substrate of this embodiment is designed to be 50mm×25mm, reflecting the effect of miniaturization without bonding wires.

(2)步骤804，制成独立的带镀层的引脚(2) Step 804, making independent pins with plating

如图4A所示，每个引脚206都是用铜基材，制成长度C为25毫米，宽度K为1.5毫米，厚度H为1毫米的长条状；在此，为便于装配，如图4B所示，在其中一端压制出一定的弧度。As shown in Figure 4A, each pin 206 is made of copper base material, and the length C is 25 mm, the width K is 1.5 mm, and the thickness H is 1 mm; here, for ease of assembly, as As shown in Fig. 4B, a certain arc is pressed at one end.

然后，通过化学镀的方法形成镍层：通过镍盐和次亚磷酸钠混合溶液，并添加了适当的络合剂，在已形成特定形状的铜材表面形成镍层，在金属镍具有很强的钝化能力，能迅速生成一层极薄的钝化膜，能抵抗大气、碱和某些酸的腐蚀。镀镍结晶极细小，镍层厚度一般为0.1微米；Then, the nickel layer is formed by electroless plating: through the mixed solution of nickel salt and sodium hypophosphite, and adding an appropriate complexing agent, a nickel layer is formed on the surface of the copper material that has formed a specific shape. Excellent passivation ability, can quickly form a very thin passivation film, can resist the corrosion of atmosphere, alkali and some acids. The crystals of nickel plating are extremely small, and the thickness of the nickel layer is generally 0.1 microns;

接着通过酸性硫酸盐工艺，在室温下将已形成形状和镍层的铜材浸在带有正锡离子的镀液中通电，在镍层表面形成镍锡合金层，镍层厚度一般控制在5微米，镍层的形成极大提高了可焊性；到此，所述引脚206制造完成。Then, through the acid sulfate process, at room temperature, the copper material with the formed shape and nickel layer is immersed in the plating solution with positive tin ions and energized, and a nickel-tin alloy layer is formed on the surface of the nickel layer. The thickness of the nickel layer is generally controlled at 5 Micron, the formation of the nickel layer greatly improves the solderability; so far, the manufacturing of the pin 206 is completed.

在此，本实施例中的引脚206是一个个单独的引脚，引脚206被固定在的所述电路布线204仅通过树脂部分包裹固定，抗冲击强度有限，单独的引脚避免了切除加强筋的工序，能够降低对智能功率模块的系统性冲击。当然，为了引脚装配方便，可仍使用整排引脚的形式。Here, the pins 206 in this embodiment are individual pins, and the circuit wiring 204 on which the pins 206 are fixed is only partially wrapped and fixed by resin, so the impact resistance is limited, and the individual pins avoid cutting The ribbing process can reduce the systemic impact on the intelligent power module. Of course, for the convenience of pin assembly, the whole row of pins can still be used.

(3)步骤806，在电路布线表面倒装元器件和配置引脚(3) Step 806, flip-chip components and configure pins on the circuit wiring surface

本工序是在所述电路布线204表面倒装所述元器件208和配置所述引脚206的工序。This step is a step of flip-chipping the components 208 on the surface of the circuit wiring 204 and arranging the pins 206 .

如图5A和图5B所示，首先，制作出底板50，所述底板50可以使用高强度的不锈钢制作而成，也可考虑使用合成石作为材料。As shown in FIG. 5A and FIG. 5B , firstly, a bottom plate 50 is produced, and the bottom plate 50 can be made of high-strength stainless steel, and synthetic stone can also be considered as a material.

其次，将制作好的电路布线204通过锡膏印刷机，使用钢网，对所述电路布线204的特定位置进行锡膏涂装，钢网可使用0.13mm的厚度。将在所述电路布线204上涂敷好锡膏的电路基板202放置在所述底板50上，通过SMT机或DA机等设备，进行元器件208和引脚206的安装，所述元器件208可直接倒装在所述电路布线204的特定位置，而引脚206则一端要安放在所述引脚焊盘2042上，另一端需要底板50进行固定。Secondly, the prepared circuit wiring 204 is passed through a solder paste printing machine, and a stencil is used to coat a specific position of the circuit wiring 204 with solder paste, and the thickness of the stencil can be 0.13 mm. The circuit substrate 202 coated with solder paste on the circuit wiring 204 is placed on the base plate 50, and the components 208 and pins 206 are installed through equipment such as an SMT machine or a DA machine. The components 208 It can be directly flipped on a specific position of the circuit wiring 204 , while one end of the pin 206 should be placed on the pin pad 2042 , and the other end needs to be fixed by the base plate 50 .

然后，放于所述底板50上的所述电路基板202通过回流焊，锡膏固化，所述元器件208和所述引脚206被固定。在此，回流温度一般不超过300℃。Then, the circuit substrate 202 placed on the base plate 50 is reflowed, the solder paste is solidified, and the components 208 and the pins 206 are fixed. Here, the reflux temperature generally does not exceed 300°C.

(4)步骤808，密封树脂密封电路基板(4) Step 808, sealing the circuit board with sealing resin

首先，在无氧环境中对固定有元器件208和引脚206的所述电路基板202进行烘烤，烘烤时间不应小于2小时，烘烤温度和选择125℃。Firstly, bake the circuit substrate 202 on which the components 208 and pins 206 are fixed in an oxygen-free environment, the baking time should not be less than 2 hours, and the baking temperature should be 125°C.

如图6B所示，将所述电路基板202搬送到塑封模型中(塑封模型包括上模61及下模62)。通过使引脚206的特定部分与固定装置63接触、所述电路基板202的底部与配置在所述下模62接触，所述引脚206进行所述电路基板202的前后定位、所述下模62进行所述电路基板202的上下定位。As shown in FIG. 6B , the circuit substrate 202 is transported into a plastic packaging mold (the plastic packaging mold includes an upper mold 61 and a lower mold 62 ). By making a specific portion of the pin 206 contact the fixing device 63, and the bottom of the circuit substrate 202 contact the lower mold 62, the pin 206 performs front and rear positioning of the circuit substrate 202, and the lower mold 62 is positioned. 62 performs vertical positioning of the circuit board 202 .

合模时，在形成于塑料模具内部的模腔中放置电路基板202，然后由浇口65注入密封树脂。进行密封的方法可采用热硬性树脂的传递模模制或使用热硬性树脂的注入模模制。而且，自浇口65注入的密封树脂模腔内部的气体通过排气口66排放到外部；在此，所述上模61的特定位置有凸起部67，特定位置对应所述元器件208中的功率元件2082的位置，使所述上模61与功率元件2082的距离很近，注塑压力需要适当调高，因为本实施例中的智能功率模块无邦定线，不存在冲线的风险，所以注塑压力的调高不影响智能功率模块的品质。When closing the mold, the circuit board 202 is placed in the cavity formed inside the plastic mold, and then the sealing resin is injected through the gate 65 . A method of performing sealing may employ transfer molding of a thermosetting resin or injection molding using a thermosetting resin. Moreover, the gas inside the sealing resin mold cavity injected from the gate 65 is discharged to the outside through the exhaust port 66; The position of the power element 2082 makes the distance between the upper mold 61 and the power element 2082 very close, and the injection pressure needs to be increased appropriately, because the intelligent power module in this embodiment has no bonding wire, and there is no risk of breaking the line. Therefore, increasing the injection pressure does not affect the quality of the smart power module.

在此，所述上模61不与智能功率模块产生接触，为了便于智能功率模块在模腔中的定位，有时也使用在所述上模61配置顶针64(图6B中未示出)的方式，对智能功率模块在模腔中的位置进行定位，在本实施例出于最大程度提高模块致密性考虑，因为引脚的定位已经可以使电路基板202与所述下模45接触，所以未为上模61配置顶针，仅在底部配置了顶针。Here, the upper mold 61 does not come into contact with the smart power module. In order to facilitate the positioning of the smart power module in the mold cavity, sometimes a method of disposing ejector pins 64 (not shown in FIG. 6B ) on the upper mold 61 is also used. , to locate the position of the intelligent power module in the mold cavity. In this embodiment, in order to improve the compactness of the module to the greatest extent, because the positioning of the pins can already make the circuit substrate 202 contact with the lower mold 45, so it is not for The upper die 61 is equipped with thimbles, and only the thimbles are configured at the bottom.

脱模后，整个所述电路基板202被所述封装外壳完全包裹，如果所述密封树脂溢胶严重，可以通过追加一个激光除溢胶或研磨除溢胶的工序。After demoulding, the entire circuit substrate 202 is completely wrapped by the packaging shell. If the sealing resin overflows seriously, an additional process of laser or grinding can be added to remove the overflow.

(5)步骤810，配置散热片、引脚成型和模块功能测试(5) Step 810, configure heat sink, pin forming and module function test

本工序为进行所述散热片镶嵌、所述引脚成型和智能功率模块功能测试的工序This process is the process of inlaying the heat sink, forming the pins and testing the function of the intelligent power module

在前工序中，所述封装外壳210的上表面有凹陷，具有特定形状的金属散热片212预先准备好，为根据所述上模61突出的形状制作，可以考虑制作成比所述上模61的凸起部67的几何尺寸小0.1微米；在所述凹陷处注入硅胶，然后将所述散热片212安放在凹陷中，如果有硅胶溢出，可考虑增加清洁硅胶的工序，如果硅胶溢出不严重，一般不作清洁，硅胶的外露一般不会对智能功率模块的使用造成影响。In the previous process, the upper surface of the package shell 210 has a depression, and the metal heat sink 212 with a specific shape is prepared in advance, and is made according to the protruding shape of the upper mold 61. The geometric size of the protrusion 67 is 0.1 micron smaller; inject silica gel into the depression, and then place the heat sink 212 in the depression. If there is silica gel overflow, consider increasing the process of cleaning silica gel. If the silica gel overflow is not serious , generally do not clean, and the exposure of silica gel generally does not affect the use of intelligent power modules.

如图7所示，在前工序即传递模模装工序使除引脚206以外的其他部分都被树脂密封。本工序根据使用的长度和形状需要，例如，在虚线71的位置将外部引脚206折弯成一定形状，便于后续装配。As shown in FIG. 7, the parts other than the lead 206 are resin-sealed in the previous process, that is, the transfer molding process. In this process, according to the length and shape required, for example, the external pin 206 is bent into a certain shape at the position of the dotted line 71 to facilitate subsequent assembly.

然后将智能功率模块放入测试设备中，进行常规的电参数测试，若所述引脚206相互独立，成型后可能会有部分引脚不在同一水平面上，影响接触，所以一般需要先进行测试机金手指与引脚的接触测试，如果接触测试不通过，需要对所述引脚206进行修调处理，直到接触测试通过后，再进行电气特性测试，包括绝缘耐压、静态功耗、迟延时间等测试项目，测试合格者为成品。Then put the intelligent power module into the test equipment, and conduct conventional electrical parameter tests. If the pins 206 are independent of each other, some pins may not be on the same level after molding, which will affect the contact. The contact test between the golden finger and the pin, if the contact test fails, the pin 206 needs to be trimmed until the contact test is passed, and then the electrical characteristic test, including insulation withstand voltage, static power consumption, and delay time And other test items, those who pass the test are finished products.

利用上述工序，完成本实施例的智能功率模块200。Using the above steps, the smart power module 200 of this embodiment is completed.

以上结合附图详细说明了本发明的技术方案，本发明提出了一种新的智能功率模块、智能功率模块的制备方法及电力电子设备，通过倒装方式使元器件，包括中小功率电路元件形成电连接，不再需要金属邦定线，节省了成本；将模块所有元素用树脂密封，最大限度提高抗水气进入效果，即使外部湿气内侵，因为已不存在金属线，已难以构成腐蚀。在功率器件的位置导热性较低的树脂特别薄并且外置导热性较高的散热组件，极大改善了功率器件的散热坏境，使功率器件可以工作在低结温下，使功率器件的降额使用成为可能，降低了智能功率模块的物料成本。The technical solution of the present invention has been described in detail above in conjunction with the accompanying drawings. The present invention proposes a new intelligent power module, a preparation method of the intelligent power module, and power electronic equipment. Electrical connection eliminates the need for metal bonding wires, which saves costs; all elements of the module are sealed with resin to maximize the anti-moisture ingress effect, even if external moisture invades, because there are no metal wires, it is difficult to cause corrosion . The resin with low thermal conductivity is particularly thin at the position of the power device and the heat dissipation component with high thermal conductivity is installed outside, which greatly improves the heat dissipation environment of the power device, enables the power device to work at a low junction temperature, and makes the power device Derating is possible, reducing the material cost of intelligent power modules.

以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.

Claims (17)

1.一种智能功率模块，其特征在于，包括：1. An intelligent power module, comprising: 电路基板，所述电路基板的上表面设置有电路布线；A circuit substrate, the upper surface of the circuit substrate is provided with circuit wiring; 多个器件引脚，所述器件引脚与所述电路布线电连接；a plurality of device pins electrically connected to the circuit wiring; 多个元器件，所述多个元器件倒装在所述电路布线上；a plurality of components, the plurality of components are flip-chip on the circuit wiring; 封装外壳，至少完全包覆所述电路基板的上表面、所述电路布线和所述多个元器件，其中，所述封装外壳在所述多个元器件中的功率器件位置处形成有凹槽，所述器件引脚自所述封装外壳的内侧向外侧伸出；The encapsulation shell completely covers at least the upper surface of the circuit substrate, the circuit wiring and the plurality of components, wherein the encapsulation shell is formed with a groove at the position of the power device among the plurality of components , the device pins protrude from the inner side of the package shell to the outer side; 散热组件，设置在所述凹槽中，所述散热组件用于对所述功率器件进行散热。A heat dissipation component is disposed in the groove, and the heat dissipation component is used to dissipate heat from the power device. 2.根据权利要求1所述的智能功率模块，其特征在于，所述电路布线包括引脚焊盘，所述器件引脚安装在所述引脚焊盘上。2 . The intelligent power module according to claim 1 , wherein the circuit wiring includes pin pads, and the device pins are mounted on the pin pads. 3 . 3.根据权利要求2所述的智能功率模块，其特征在于，还包括：3. The intelligent power module according to claim 2, further comprising: 焊接层，设置在所述电路布线与所述多个元器件之间以及在所述引脚焊盘和所述器件引脚之间。The soldering layer is arranged between the circuit wiring and the plurality of components and between the lead pad and the device lead. 4.根据权利要求1所述的智能功率模块，其特征在于，所述散热组件粘接在所述凹槽中。4. The intelligent power module according to claim 1, wherein the heat dissipation component is bonded in the groove. 5.根据权利要求4所述的智能功率模块，其特征在于，所述散热组件包括散热片。5. The intelligent power module according to claim 4, wherein the heat dissipation component comprises a heat sink. 6.根据权利要求5所述的智能功率模块，其特征在于，所述散热片的高度与所述凹槽的深度相同，所述散热片的顶部形成所述封装外壳表面的一部分。6 . The intelligent power module according to claim 5 , wherein the height of the heat sink is the same as the depth of the groove, and the top of the heat sink forms a part of the surface of the packaging shell. 7.根据权利要求1所述的智能功率模块，其特征在于，还包括：7. The intelligent power module according to claim 1, further comprising: 合金层，设于所述器件引脚的表层，所述合金层的厚度范围为0.1～10微米。The alloy layer is arranged on the surface layer of the device lead, and the thickness range of the alloy layer is 0.1-10 microns. 8.根据权利要求6所述的智能功率模块，其特征在于，8. The intelligent power module according to claim 6, characterized in that, 所述合金层的厚度为5微米。The thickness of the alloy layer is 5 microns. 9.根据权利要求1至8中任一项所述的智能功率模块，其特征在于，所述封装外壳还完全包覆所述电路基板的下表面。9. The intelligent power module according to any one of claims 1 to 8, characterized in that, the encapsulation shell also completely covers the lower surface of the circuit substrate. 10.根据权利要求1至8中任一项所述的智能功率模块，其特征在于，10. The intelligent power module according to any one of claims 1 to 8, characterized in that, 所述电路布线的厚度大于或等于0.07毫米。The thickness of the circuit wiring is greater than or equal to 0.07 mm. 11.一种智能功率模块的制备方法，其特征在于，包括：11. A method for preparing an intelligent power module, comprising: 在电路基板的上表面形成电路布线，其中，所述电路布线包括引脚焊盘；forming circuit wiring on the upper surface of the circuit substrate, wherein the circuit wiring includes pin pads; 形成多个器件引脚；form multiple device pins; 在所述电路布线上倒装元器件，以及在所述引脚焊盘上焊接所述器件引脚；Flip-chip components on the circuit wiring, and solder the device pins on the pin pads; 对形成有所述电路布线、所述元器件及所述器件引脚的所述电路基板进行封装，以形成封装外壳，其中，所述封装外壳至少完全包覆所述电路基板的上表面、所述电路布线和所述元器件，所述封装外壳在所述元器件中的功率器件位置处形成有凹槽，所述器件引脚自所述封装外壳的内侧向外侧伸出；Encapsulating the circuit substrate formed with the circuit wiring, the components and the device pins to form a packaging shell, wherein the packaging shell at least completely covers the upper surface of the circuit substrate, the The circuit wiring and the components, the packaging shell is formed with a groove at the position of the power device in the component, and the device pins protrude from the inner side of the packaging shell to the outside; 在所述凹槽中安装散热组件。A cooling component is installed in the groove. 12.根据权利要求11所述的智能功率模块的制备方法，其特征在于，所述在电路基板的上表面形成电路布线的步骤，具体包括：12. The method for preparing an intelligent power module according to claim 11, wherein the step of forming circuit wiring on the upper surface of the circuit substrate specifically comprises: 采用冲压工艺或刻蚀工艺在所述电路基板的上表面形成所述电路布线。The circuit wiring is formed on the upper surface of the circuit substrate by a stamping process or an etching process. 13.根据权利要求11所述的智能功率模块的制备方法，其特征在于，所述在所述电路布线上倒装元器件，以及在所述引脚焊盘上焊接所述器件引脚的步骤，具体包括：13. The method for preparing an intelligent power module according to claim 11, characterized in that, the steps of flip-chip components on the circuit wiring, and welding the device pins on the pin pads , including: 采用锡膏印刷机及钢网在所述电路布线形成焊接层，其中，包括在所述引脚焊盘上形成所述焊接层；Using a solder paste printing machine and a stencil to form a soldering layer on the circuit wiring, including forming the soldering layer on the pin pad; 将所述元器件通过所述焊接层倒装在所述电路布线上；Flip-chip the component on the circuit wiring through the solder layer; 将所述器件引脚的一端通过所述焊接层组装至所述引脚焊盘上。Assembling one end of the device lead to the lead pad through the solder layer. 14.根据权利要求11所述的智能功率模块的制备方法，其特征在于，所述对形成有所述电路布线、所述元器件及所述器件引脚的所述电路基板进行封装，以形成封装外壳的步骤，具体包括：14. The method for manufacturing an intelligent power module according to claim 11, wherein the circuit substrate on which the circuit wiring, the components and the device pins are formed is packaged to form The steps of encapsulating the shell include: 在无氧环境中，采用目标烘烤温度对形成有所述电路布线、所述元器件及所述器件引脚的所述电路基板进行持续目标时长的烘烤；In an oxygen-free environment, use a target baking temperature to bake the circuit substrate formed with the circuit wiring, the components and the device pins for a target duration; 将烘烤后的形成有所述电路布线、所述元器件及所述器件引脚的所述电路基板放置于塑封模具中，其中，所述塑料模具包括上模和下模，所述上模形成有凸起部，所述元器件中的功率器件位于所述凸起部下方、且与所述凸起部之间存在间隙；The circuit substrate formed with the circuit wiring, the components and the device pins after baking is placed in a plastic sealing mold, wherein the plastic mold includes an upper mold and a lower mold, and the upper mold A raised part is formed, and the power device in the component is located under the raised part, and there is a gap between the raised part and the said raised part; 通过所述塑封模具的浇口注入密封树脂，以形成所述封装外壳，其中，所述封装外壳基于所述凸起部形成所述凹槽，所述电路基板的下表面裸露或密封于所述封装外壳内。The sealing resin is injected through the gate of the plastic sealing mold to form the package housing, wherein the package housing forms the groove based on the protrusion, and the lower surface of the circuit substrate is exposed or sealed on the package inside the case. 15.根据权利要求11所述的智能功率模块的制备方法，其特征在于，所述在所述凹槽中安装散热组件的步骤，具体包括：15. The method for preparing an intelligent power module according to claim 11, wherein the step of installing a heat dissipation component in the groove specifically comprises: 向所述凹槽中注入粘胶，并将所述散热组件镶嵌在所述凹槽中。Glue is injected into the groove, and the heat dissipation component is embedded in the groove. 16.一种电力电子设备，其特征在于，包括：16. A power electronic device, characterized in that it comprises: 如上述权利要求1至10中任一项所述的智能功率模块；The intelligent power module according to any one of the preceding claims 1 to 10; 或采用如权利要求11至15中任一项所述的智能功率模块的制备方法制备而成的智能功率模块。Or an intelligent power module prepared by the method for preparing an intelligent power module according to any one of claims 11 to 15. 17.根据权利要求16所述的电力电子设备，其特征在于，所述电力电子设备包括空调器。17. The power electronic device according to claim 16, wherein the power electronic device comprises an air conditioner.
CN201611263260.3A 2016-12-30 2016-12-30 Intelligent power module, preparation method of intelligent power module and power electronic device Pending CN106601700A (en)

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