CN106498368B - A shower head for MOCVD equipment - Google Patents
A shower head for MOCVD equipment Download PDFInfo
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- CN106498368B CN106498368B CN201611022509.1A CN201611022509A CN106498368B CN 106498368 B CN106498368 B CN 106498368B CN 201611022509 A CN201611022509 A CN 201611022509A CN 106498368 B CN106498368 B CN 106498368B
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- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title claims abstract 7
- 239000007789 gas Substances 0.000 claims abstract description 157
- 238000006243 chemical reaction Methods 0.000 claims abstract description 74
- 239000012495 reaction gas Substances 0.000 claims abstract description 26
- 238000001816 cooling Methods 0.000 claims description 21
- 239000012159 carrier gas Substances 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000005192 partition Methods 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000005984 hydrogenation reaction Methods 0.000 claims description 2
- 239000007921 spray Substances 0.000 abstract description 46
- 239000002184 metal Substances 0.000 abstract description 37
- 229910052751 metal Inorganic materials 0.000 abstract description 37
- 230000006698 induction Effects 0.000 abstract description 29
- 239000000376 reactant Substances 0.000 abstract description 17
- 238000000151 deposition Methods 0.000 abstract description 14
- 230000008021 deposition Effects 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 8
- 230000002411 adverse Effects 0.000 abstract description 4
- 230000003247 decreasing effect Effects 0.000 abstract description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 21
- 150000004678 hydrides Chemical class 0.000 description 14
- 230000032258 transport Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 5
- 238000003491 array Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000008246 gaseous mixture Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of spray head for MOCVD device, including multiple inlet plenums being mutually isolated, corresponding admission line and exhaust duct positioned at spray head center.Since spray head has air induction conduit and exhaust duct simultaneously, reaction gas sprays into reaction chamber through the air induction conduit of spray head from the top down, exhaust duct finally through spray head center is extracted out from bottom to top, intracavity gas is reacted radially from outer side to center flow, the adverse effect that reactant is lost along journey can be greatly decreased, help to obtain good epitaxial growth uniformity.Multiple mutually isolated inlet chambers optionally transport first, second or third reaction gas, by selecting the suitable permutation and combination of inlet chamber that the utilization rate of metal organic gas can be substantially improved, substantially eliminate the reactant deposition of the side wall of reaction chamber.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly, to a kind of spray head for MOCVD device.
Background technique
Metal organic chemical vapor deposition (MOCVD) technology is to grow the important skill of high quality compound semiconductor thin-film material
Art means are preparing the structures such as thin layer hetero-junctions, superlattices and Quantum Well with significant superiority, are having become iii-v
With the core growth technology of II-VI group compound semiconductor and its multivariate solid solution material, especially gallium nitride base light emitting is being prepared
Diode and laser etc. obtain immense success.
Currently, the MOCVD device of mainstream can be divided into horizontal and rectilinear reaction chamber according to airpath design, in which:
Horizontal reaction chamber designs mainly using the planetary reaction chamber of Aixtron company as representative, and rotation is used to add public affairs
The planetary rotation technology turned, reactant enters reaction chamber from center jet, along substrate radially to outer rim bottom horizontal flow sheet,
Stable laminar flow is obtained using the rotation and revolution of substrate, is asked with solving the intrinsic reactant of horizontal reaction chamber along journey loss
Topic, to can get the uniform speed of growth on the surface of a substrate.Its advantage is that low speed rotation, gas usage are small, but react
Quartz above chamber is covered with the risk of deposition, and the device is complicated, and growth course is more difficult to control, therefore plant maintenance and growth cost
It is high.
Rectilinear reaction chamber is purchased with Emcore(by Veeco) high speed rotation disc type reaction chamber (RDR) and Thomas
Swan(is purchased by Aixtron) tight nearly coupling spray (CCS) reaction chamber be representative.High speed rotation disc type reaction chamber (RDR)
Reactant enters reaction chamber from top flange spout, is answered using the pump efficiency that pedestal high speed rotation generates, it is suppressed that due to spout and
The thermal convection that pedestal distance is big and easily causes, forms stable piston flow, ensure that the uniformity of epitaxial growth, its advantage is that
Reaction cavity wall deposits less, utilization rate of equipment and installations is high, but gas usage is big.And the characteristics of close coupling fountain (CCS) reaction chamber
It is the distance between spray head and substrate very little, is conducive to that thermal convection is inhibited to obtain stable laminar flow, its advantage is that gas usage
It is small, utilization rate of raw materials is high, but react that cavity wall deposition is serious, cleaning time is more.
MOCVD device design for above-mentioned mainstream, in addition to require the non-vortex Laminar Flow of reaction intracavity gas and
Except good these basic demands of epitaxial growth uniformity, it is also necessary to consider to further decrease the production cost of epitaxial wafer.It is right
In the reaction chamber design requirement of ideal MOCVD device, summarize following points: 1. improve reaction chamber capacity and utilization rate of equipment and installations
(reducing clean and maintenance time etc.) Lai Tigao output；2. improving epitaxial growth uniformity and repeatability to improve yield rate；
3. reducing gas usage, the utilization rate of metal organic gas is improved to reduce operating cost.As it can be seen that the MOCVD of above-mentioned mainstream is anti-
Answer chamber respectively to have advantage and disadvantage, can not meet simultaneously more than the needs of, improve metal organic gas utilization rate and reduce reaction chamber
Side wall deposition etc. has biggish room for improvement.
Summary of the invention
The purpose of the present invention is to provide a kind of spray head for MOCVD device, which can be substantially improved metal
The utilization rate of organic gas, substantially eliminates the reactant deposition of reaction chamber side wall, while obtaining good epitaxial growth uniformity.
The object of the present invention is achieved like this:
A kind of spray head for MOCVD device, including the inlet plenum for receiving reaction gas, inlet plenum be one by
The hollow cylinder that top plate, lateral wall, inner sidewall and bottom plate are constituted, is successively arranged cooling chamber and reaction below inlet plenum
Chamber is characterized in: air induction conduit is equipped on the bottom plate of inlet plenum, the center of the top plate above inlet plenum is equipped with exhaust duct,
Air induction conduit is passed down through the cooling chamber below inlet plenum and is connected with reaction chamber, and the indoor reaction gas of air inlet is passed through reaction
In chamber, for the upper end opening of exhaust duct in outside inlet plenum, the lower end of exhaust duct sequentially passes through downwards top plate and bottom plate, cooling chamber
It is connected afterwards with reaction chamber, the indoor reaction gas of air inlet sprays into reaction chamber from the top down through air induction conduit, in reaction chamber
Tail gas is extracted out from bottom to top through exhaust duct, and the gas in reaction chamber is radially from outer side to center flow.
Exhaust duct has a lower end surface towards reaction chamber, and cooling chamber has a lower surface towards reaction chamber,
The lower end surface of exhaust duct has at a distance from different between the lower surface of cooling chamber, which is greater than or equal to zero, is less than cold
But the distance between the pedestal in the lower surface and reaction chamber of chamber.
It is equipped with the vertical dividing walls of 1--7 in inlet plenum, inlet plenum is separated into 2--8 and is mutually isolated by dividing wall
Inlet chamber, is provided with respective air inlet to receive reaction gas on the top plate of each inlet chamber or on side wall, it is each into
Respective air induction conduit is provided on the bottom plate of air cavity, air induction conduit sprays the reaction gas in corresponding inlet chamber from the top down
Enter reaction chamber.
Preferably, 2--3 vertical dividing walls are equipped in inlet plenum, inlet plenum is separated into 3--4 mutually by dividing wall
The inlet chamber being isolated.
Vertical dividing wall is round perhaps polygon or their combination.
Multiple inlet chambers being mutually isolated include: 1 to 7 inlet chambers for transporting first gas, and 1 to 7 transport the second gas
The inlet chamber of body, 0 to 6 transport the inlet chamber of third gas.Multiple inlet chambers being mutually isolated optionally transport first
Gas, second gas or third gas, to carry out permutation and combination.
The first gas is the mixed gas of metal organic gas or metal organic gas and carrier gas；Described second
Gas is the mixed gas of hydride gas or hydride gas and carrier gas；The third gas be carrier gas, including nitrogen,
One of hydrogen and inert gas are a variety of.
Compared with prior art, the present invention has a characteristic that
1, the present invention has air induction conduit and exhaust duct simultaneously, and the spray head of traditional MOCVD device has essence not
Together.The tail gas of traditional MOCVD device is substantially from the outside of reaction chamber and extracts out from top to bottom, spray head or identity function
Component only sprays gas from the top down, and the gas radial direction in reaction chamber is all flowed from center outward.The present invention is
It is provided with exhaust duct in the center of top plate, reaction gas sprays into reaction chamber through the air induction conduit of spray head from the top down
In, the exhaust duct finally through spray head center is extracted out from bottom to top, and the gas in reaction chamber is radially flowed from outer side to center
It is dynamic.The adverse effect that reactant is lost along journey can be greatly decreased in the unique gas flow pattern, help to obtain good outer
Prolong growth uniformity.
2, exhaust duct of the invention has a lower end surface towards reaction chamber, and cooling chamber is with one towards reaction chamber
Lower surface, the lower end surface of exhaust duct between the lower surface of cooling chamber have it is different at a distance from, which is greater than or equal to
Zero, less than the distance between the pedestal in the lower surface and reaction chamber of cooling chamber.This illustrates that exhaust duct may extend to reaction chamber
Inside can play adjusting reaction chamber by adjusting the lower end surface and the distance between lower surface of cooling chamber of exhaust duct
The important function of interior gas flowing.
3, multiple mutually isolated inlet chambers optionally transport first, second or third reaction gas in the present invention
Body substantially eliminates reaction by selecting the suitable permutation and combination of inlet chamber that the utilization rate of metal organic gas can be substantially improved
The reactant of the side wall of chamber deposits.
4, corresponding air inlet is respectively arranged on the top plate of the inlet chambers being mutually isolated multiple in the present invention or on side wall
Mouthful, thus can independent control reaction gas flow and gaseous species, and can be according to the type for transporting reaction gas, to design
Pipe diameter size, shape and the tube spacing of air induction conduit, therefore can get the process window of biggish epitaxial growth uniformity.
5, reactant gas flow concentrates on the space above the pedestal of reaction chamber in the present invention, protects below reaction chamber
Accessory by the pollution of reactant, does not increase the service life of accessory, reduces cost of equipment maintenance.
Detailed description of the invention
Fig. 1 is the schematic diagram of the section structure of the MOCVD device of setting spray head of the present invention in embodiment 1；
Fig. 2 is the A-A of spray head of the present invention in embodiment 1 to bottom view；
Fig. 3 is the B-B direction top view of spray head of the present invention in embodiment 1；
Fig. 4 is the A-A of spray head of the present invention in example 2 to bottom view；
Fig. 5 is the B-B direction top view of spray head of the present invention in example 2；
Fig. 6 is the A-A of spray head of the present invention in embodiment 3 to bottom view；
Fig. 7 is the B-B direction top view of spray head of the present invention in embodiment 3.
Specific embodiment
Below with reference to embodiment and compares attached drawing 1 the present invention is described in further detail.
Embodiment 1:
As shown in Figure 1, the present invention provides a kind of spray heads for MOCVD device, comprising: for receiving reaction gas
Inlet plenum 1, inlet plenum 1 is the hollow cylinder being made of top plate 100, lateral wall 110, inner sidewall 120 and bottom plate 130
Body is set in inlet plenum 1 there are two vertical circular partition wall 201,202, and two circular partition walls 201,202 are by inlet plenum 1
Three inlet chambers being mutually isolated 301,302 and 303 are separated into, on the top of three inlet chambers being mutually isolated 301,302 and 303
Corresponding air inlet 501,502 and 503 is respectively arranged on plate 100 to be mutually isolated to receive different reaction gas at three
Inlet chamber 301,302 and 303 bottom plate 130 on be respectively arranged with corresponding air induction conduit 401,402 and 403, air induction conduit
401,402 and 403 cooling chambers 700 for being each passed through 1 lower section of inlet plenum are connected with reaction chamber 800, by inlet chamber 301,302 and
Reaction gas in 303 is passed through in reaction chamber 800.
The center of the top plate 100 of spray head, tail gas are arranged in using the detachable structure of sealing ring sealing for exhaust duct 600
Conduit 600 is adjacent with the side wall 120 of inlet plenum 1, and exhaust duct 600 is formed by double-layer stainless steel steel-pipe welding, and there is tail gas in centre
Conduit cooling chamber 620, in outside inlet plenum 1, the lower end of exhaust duct 600 sequentially passes through downwards the upper end opening of exhaust duct 600
It is connected after top plate 100, bottom plate 130, cooling chamber 700 with reaction chamber 800, the tail gas in reaction chamber 800 is extracted out from bottom to top.
Reaction chamber 800 includes side wall 810, the pedestal 820 positioned at 800 bottom of reaction chamber, and pedestal 820 can be revolved around central axis
Turn；The wafer region for placing chip is equipped in the upper surface of pedestal 820；It is equipped with heater 830 in the lower section of pedestal 820, is passed through
The heating of heater 830 can make the chip temperature on pedestal 820 reach the suitable temperature for growing crystal.
As shown in Figures 2 and 3, inlet plenum 1 is separated into three annular shapes by two vertical circular partition walls 201 and 202
Inlet chamber 301,302 and 303, and the air induction conduit 401,402 and 403 of three inlet chambers respectively corresponding inlet chamber 301,
It is uniformly distributed in 302 and 303, in regular single-turn or multi-turn concentric arrays, guarantee is all to enter reaction by air induction conduit 401
The gas flow rate of chamber 800 is identical, it is all by air induction conduit 402 enter reaction chamber 800 gas flow rates it is identical, it is all by into
The gas flow rate that airway 403 enters reaction chamber 800 is identical.
In the present embodiment, three inlet chambers are followed successively by from outside to inside to be transported the inlet chamber 302 of second gas, transports the first gas
The inlet chamber 301 of body and the inlet chamber 303 for transporting third gas.The first gas is that metal organic gas or metal have
The mixed gas of machine gas and carrier gas；The second gas is the gaseous mixture of hydride gas or hydride gas and carrier gas
Body；The third gas is one of carrier gas, including nitrogen, hydrogen and inert gas or a variety of.
The air induction conduit 401,402 and 403 of three inlet chambers is in regular single-turn or multi-turn concentric arrays, wherein transporting
The air induction conduit 401 of the inlet chamber 301 of first gas uses individual pen structure and guarantees that metal has to form sufficiently fast flow velocity
Machine gas is preferred to the transport capability on 820 surface of motor seat with that can cover the outer rim of pedestal 820.
Hydride gas is received through inlet chamber 302 and is sprayed from air induction conduit 402, and the metal on the inside of it is on the one hand driven to have
Machine gas in the form of level stream to center flow, while also prevent inside side wall from metal organic gas to reaction chamber 800
810 diffusions, prevent the reactant of side wall 810 from depositing.
Carrier is received through inlet chamber 303 and is sprayed from air induction conduit 403, by the metal organic gas mixed and hydrogenation
Object gas is suppressed downwards, and the expansion of the tube wall 610 of metal organic gas spray head upwards and exhaust duct 600 can be prevented
It dissipates, reduces the deposition of above-mentioned zone reactant, prior effect is can to increase metal organic gas sinking on pedestal 820
Product efficiency, improves metal organic gas utilization rate, the speed of growth when area epitaxy can be also adjusted by flow control.
Reaction gas is equipped with cavity while being transported to pedestal 820 from top to bottom through spray head, in the lower section of pedestal 820
Purge gas air inlet 840, cavity purge gas can be second gas either third gas, air-flow and blow from bottom to top, with
It prevents top from getting off the mixed gas containing metal organic gas and hydride gas to the cavity flowing below pedestal 820, prevents
The only deposition of the 810 cavity of resorption body portion of side wall of reaction chamber 800 and protection heater 830.
In the present embodiment, the spray head of MOCVD device has air induction conduit 401,402 and 403 and exhaust duct simultaneously
600, and the spray head of traditional MOCVD device has essential difference.The tail gas of traditional MOCVD device is substantially from reaction chamber
Outside is extracted out from top to bottom, and the component of spray head or identity function only sprays gas from the top down, the gas in reaction chamber
Body radial direction is all flowed from center outward.The spray head of the MOCVD device of the present embodiment is provided with tail gas in center
Pipe 600, reaction gas are extracted from bottom to top through the offgas duct 600 at spray head center, the gas in reaction chamber 800 radially from
Outer lateral center flow.The adverse effect that reactant is lost along journey can be greatly decreased in the unique air-flow type of flow, be conducive to
Obtain good epitaxial growth uniformity.
Exhaust duct 600 in the present embodiment extends to the inside of reaction chamber 800.The lower surface of cooling chamber 700 with react
The distance between pedestal 820 in chamber 800 is 70mm, and between the lower end surface of exhaust duct 600 and the lower surface of cooling chamber 700
Distance be 35mm.It (since exhaust duct is the detachable structure of sealing ring sealing, can be torn open when blow-on by adjusting
Unload replacement, while the adjustable distance) the distance between the lower surface of the lower end surface of exhaust duct 600 and cooling chamber 700, it can
To play the important function for adjusting gas flowing in reaction chamber 800.
The characteristics of the present embodiment gas transport are as follows: (1) metal organic gas concentrates the inlet chamber 301 by transporting first gas
It receives and enters reaction chamber 800 from small number of air induction conduit 401, ensure that the metal organic gas of high concentration quickly reaches
To pedestal 820, the utilization rate of metal organic gas greatly improved.(2) hydride gas is by being located at transporting on the outside of spray head
The inlet chamber 302 of second gas receives and enters reaction chamber 800 from air induction conduit 402, has both driven the metal on the inside of it organic
Gas to center flow, and prevents metal organic gas from spreading to the side wall 810 of reaction chamber 800 in the form of level stream, prevents side
Wall 810 deposits.(3) inlet chamber 303 that carrier is transported third gas receives and sprays and will mix from air induction conduit 403
Metal organic gas and hydride gas are suppressed downwards, are prevented from forming turbulent flow in spray head central area, are improved reaction chamber 800
The stability of gas flowing, while preventing the tube wall 610 of metal organic gas spray head upwards and exhaust duct 600
Diffusion, reduces the deposition of reactant, and can increase deposition efficiency of the metal organic gas on pedestal 820, passes through stream
Amount control is to adjust the speed of growth when area epitaxy.(4) cavity purge gas air inlet 840, gas are set below pedestal 820
Stream is blown from bottom to top, prevents the deposition and protection heater 830 of the 810 cavity of resorption body portion of side wall of reaction chamber 800.(5) it reacts
Gas is finally extracted from the offgas duct 600 for being located at spray head center from bottom to top, therefore gas radial direction in reaction chamber 800
It is to reduce the adverse effect that reactant is lost along journey from from outer side to center flow.
As it can be seen that Each performs its own functions for the reaction gas in three inlet chambers 301,302 and 303, formed unique in reaction chamber 800
The air-flow type of flow, guarantees stable Laminar Flow, not only greatly improves metal organic gas utilization rate but also is greatly decreased
The reactant of the side wall 810 of reaction chamber 800 deposits.Due to the reaction gas in three inlet chambers 301,302 and 303 can by into
Port 501,502 and 503 individually controls gas flow, therefore can get the process window of biggish epitaxial growth uniformity.
The reaction gas of three inlet chambers 301,302 and 303 is other than combinations of the above, and there are also other combination of gases
It equally can achieve the effect of above-described embodiment.Table 1 lists several feasible reaction gas combinations.
。
Embodiment 2:
As shown in Figure 4 and Figure 5, the structure of embodiment 2 and the structure of embodiment 1 are essentially identical, the difference is that:
Three vertical circular partition walls 201,202 and 203 by inlet plenum 1 be separated into four circular inlet chambers 301,
302,303 and 304, and the air induction conduit 401,402,403 and 404 of four inlet chambers respectively corresponding inlet chamber 301,302,
It is uniformly distributed in 303 and 304, in regular single-turn or multi-turn concentric arrays.
In the present embodiment, four inlet chambers are followed successively by from outside to inside to be transported the inlet chamber 302 of second gas, transports the first gas
The inlet chamber 301 of body and the inlet chamber 303,304 for transporting third gas.The first gas is metal organic gas, Huo Zhejin
Belong to the mixed gas of organic gas and carrier gas；The second gas is the mixed of hydride gas or hydride gas and carrier gas
Close gas；The third gas is one of carrier gas, including nitrogen, hydrogen and inert gas or a variety of.
The air induction conduit 401,402,403 and 404 of four inlet chambers is in regular single-turn or multi-turn concentric arrays, wherein defeated
The air induction conduit 401 for transporting the inlet chamber 301 of first gas uses individual pen structure and quantity is less, further enhances metal
Organic gas is preferred to the transport capability on 820 surface of motor seat with that can cover the outer rim of pedestal 820.
Inlet chamber 303 in embodiment 1 transports third gas, and two in the present embodiment inlet chamber 303 and 304 is defeated simultaneously
Third gas is transported, the ability of regulating gas flowing and epitaxial growth speed can be further enhanced in this way.
The inlet chamber 303 that carrier is transported third gas is received and is sprayed from air induction conduit 403, the metal that will be mixed
Organic gas and hydride gas press down, and form compacting air-flow.Compacting air-flow can prevent the spray of metal organic gas upwards
Head diffusion is drenched, the deposition of the region reactant on spray head is reduced, metal organic gas substrate on pedestal 820 can also be increased
Deposition efficiency, improve metal organic gas utilization rate, growth speed when can also adjust the area epitaxy by flow control
Degree.
The inlet chamber 304 that carrier is transported third gas is received and is sprayed from air induction conduit 404, by the organic gas of barrier metal
Body and hydride gas diffuse up before entering offgas duct, prevent from forming turbulent flow in spray head central area, improve reaction
The stability that gas flows in chamber 800 reduces tube wall 610 and spray head center of the metal organic gas in exhaust duct 600
Deposition.
The reaction gas of four inlet chambers 301,302,303 and 304 is other than combinations of the above, and there are also other gases
Combination equally can achieve the effect of above-described embodiment.Table 2 lists several feasible reaction gas combinations.
。
Embodiment 3:
As shown in Figure 6 and Figure 7, the structure of embodiment 3 and the structure of embodiment 1 are essentially identical, the difference is that:
Inlet plenum 1 is separated into three inlet chambers 301,302 and 303 by two vertical hexagon dividing walls 201 and 202,
And the air induction conduit 401,402 and 403 of three inlet chambers is uniformly distributed in corresponding inlet chamber 301,302 and 303 respectively, is in
The arrangement of regular hexagon single-turn or multi-turn.
In the present embodiment, three inlet chambers are followed successively by from outside to inside to be transported the inlet chamber 302 of second gas, transports the first gas
The inlet chamber 301 of body and the inlet chamber 303 for transporting third gas.The first gas is that metal organic gas or metal have
The mixed gas of machine gas and carrier gas；The second gas is the gaseous mixture of hydride gas or hydride gas and carrier gas
Body；The third gas is one of carrier gas, including nitrogen, hydrogen and inert gas or a variety of.
The reaction gas of three inlet chambers 301,302 and 303 is other than combinations of the above, and there are also other combination of gases
It equally can achieve the effect of above-described embodiment.Table 3 lists several feasible reaction gas combinations.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611022509.1A CN106498368B (en) | 2016-11-21 | 2016-11-21 | A shower head for MOCVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN107502872B (en) * | 2017-08-24 | 2019-08-16 | 新乡市巨能合成材料有限公司 | A kind of metal organic chemical vapor deposition reactor spray equipment |
| CN110512192B (en) * | 2019-09-20 | 2024-08-23 | 南方科技大学 | Chemical vapor deposition planetary tray device and air inlet method |
| CN112695302B (en) * | 2019-10-22 | 2023-05-30 | 中微半导体设备(上海)股份有限公司 | MOCVD reactor |
| CN113549900B (en) * | 2021-07-22 | 2022-06-10 | 东北大学 | Spraying plate structure of MOCVD equipment |
| CN114059164B (en) * | 2022-01-06 | 2022-11-04 | 芯三代半导体科技(苏州)有限公司 | Silicon carbide epitaxial growth device |
| CN115011948A (en) * | 2022-08-05 | 2022-09-06 | 拓荆科技(北京)有限公司 | Device for improving granularity of thin film and gas conveying method thereof |
| CN115928049B (en) * | 2022-12-05 | 2025-06-17 | 宁波恒普技术股份有限公司 | An air intake structure suitable for vertical film forming equipment |
| CN116288273A (en) * | 2023-03-10 | 2023-06-23 | 拓荆科技(上海)有限公司 | Showerhead, method of heating gas, and apparatus and method for processing semiconductor device |
| CN117772714B (en) * | 2024-01-12 | 2024-11-08 | 南昌大学 | Cleaning system and cleaning method for MOCVD reaction chamber |
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| US6499425B1 (en) * | 1999-01-22 | 2002-12-31 | Micron Technology, Inc. | Quasi-remote plasma processing method and apparatus |
| CN101533764A (en) * | 2008-03-14 | 2009-09-16 | 东京毅力科创株式会社 | Shower head and substrate processing apparatus |
| CN102534557A (en) * | 2010-12-10 | 2012-07-04 | 财团法人工业技术研究院 | Spray head combining air intake and air exhaust |
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| US6998014B2 (en) * | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
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| US6499425B1 (en) * | 1999-01-22 | 2002-12-31 | Micron Technology, Inc. | Quasi-remote plasma processing method and apparatus |
| CN101533764A (en) * | 2008-03-14 | 2009-09-16 | 东京毅力科创株式会社 | Shower head and substrate processing apparatus |
| CN102534557A (en) * | 2010-12-10 | 2012-07-04 | 财团法人工业技术研究院 | Spray head combining air intake and air exhaust |
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