CN106230419B - SOI RF switch structure and integrated circuit - Google Patents
SOI RF switch structure and integrated circuit Download PDFInfo
- Publication number
- CN106230419B CN106230419B CN201610596479.9A CN201610596479A CN106230419B CN 106230419 B CN106230419 B CN 106230419B CN 201610596479 A CN201610596479 A CN 201610596479A CN 106230419 B CN106230419 B CN 106230419B
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- mos transistor
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- soi
- switch structure
- resistance value
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- 239000013078 crystal Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
Abstract
A kind of SOI RF switch structure and integrated circuit.SOI RF switch structure includes: the multiple MOS transistors being successively arranged side by side in the way of being connected to the drain electrode of adjacent the latter MOS transistor by the source electrode of previous MOS transistor, the source electrode and drain electrode of each MOS transistor is connected by respective first resistor device, the grid of each MOS transistor connects grid voltage by respective second resistor, the drain electrode of first MOS transistor is connected to input signal, and the source electrode of the last one MOS transistor connects output signal；The first end for the 3rd resistor device that the body area of each MOS transistor is each connected to respectively, the 4th resistor is connected between the second end of two neighboring 3rd resistor device, MOS transistor body area near RF signal input end is grounded via the 4th resistor R4, and the MOS transistor body area near output end connects back bias voltage；Each 4th resistor forms a sequentially connected serial link to carry out series connection partial pressure between ground voltage and back bias voltage voltage.
Description
Technical field
The present invention relates to semiconductor circuit design and semiconductor circuit manufacturing fields；It is more particularly related to one
Kind SOI RF switch structure, and the invention further relates to a kind of integrated circuits comprising this SOI RF switch structure.
Background technique
Silicon materials are the most widely used main raw material(s)s of semicon industry, and most of chips are manufactured with silicon wafer.
Silicon-on-insulator (SOI, Silicon-on-insulator) is a kind of special silicon wafer, and structure is mainly characterized by active
Insertion insulating layer (buried oxide layer) separates the electrical connection between active layer and substrate between layer and substrate layer, this knot
Structure feature is that the device of silicon-on-insulator class brings that ghost effect is small, speed is fast, low in energy consumption, integrated level is high, capability of resistance to radiation
Many advantages, such as strong.
Generally, on insulator middle silicon by as active layer silicon top layer, as the buried oxide layer of insulating layer, as branch
Support the silicon substrate layer composition of layer.Wherein, circuit is formed in silicon top layer (active layer).Silicon substrate layer is generally thicker, mainly makees
With being to provide mechanical support for two layers (that is, silicon top layer and buried oxide layer) above.
Fig. 1 schematically shows the structural schematic diagram of SOI RF switch structure according to prior art.Specific such as Fig. 1
Shown, SOI RF switch structure generally comprises according to prior art: being connected to phase according to the source electrode of previous MOS transistor
Multiple MOS transistors that the mode of the drain electrode of adjacent the latter MOS transistor is successively arranged side by side, wherein the multiple MOS is brilliant
The source electrode and drain electrode of each MOS transistor in body pipe passes through respective first resistor device R1 connection, the multiple MOS transistor
In the grid of each MOS transistor pass through respective second resistor R2 connection grid voltage Vg, the multiple MOS transistor
In the body area of each MOS transistor power ground, and the multiple MOS are connected to by 3rd resistor device R3 (body area resistance)
The drain electrode of first MOS transistor in transistor is connected to input signal RF_in, and in the multiple MOS transistor most
The source electrode of the latter MOS transistor connects output signal RF-_out.
Wherein, at Vg=-VDD (supply voltage of VDD expression integrated circuit), SOI RF switch structure, which is in, to be disconnected
State.
But for SOI RF switch structure according to prior art shown in FIG. 1, there are each MOS transistor grade it
Between uneven RF signal voltage distribution, as shown in Figure 2.
Accordingly, it is desirable to be capable of providing a kind of unbalance voltage distribution that can be effectively improved between each MOS transistor grade
The SOI RF switch structure of problem.
Summary of the invention
The technical problem to be solved by the present invention is to for drawbacks described above exists in the prior art, providing one kind can be effective
Improve the SOI RF switch structure of the unbalance voltage distribution problem between each MOS transistor grade.
In order to achieve the above technical purposes, according to the present invention, a kind of SOI RF switch structure is provided, comprising: according to preceding
The mode that the source electrode of one MOS transistor is connected to the drain electrode of adjacent the latter MOS transistor is successively arranged side by side multiple
MOS transistor, wherein the source electrode and drain electrode of each MOS transistor in the multiple MOS transistor passes through respective first electricity
Device connection is hindered, the grid of each MOS transistor in the multiple MOS transistor connects grid by respective second resistor
Voltage, and the drain electrode of first MOS transistor in the multiple MOS transistor is connected to input signal, and the multiple
The source electrode of the last one MOS transistor in MOS transistor connects output signal；Each MOS in the multiple MOS transistor
The first end for the 3rd resistor device that the body area of transistor is each connected to respectively, and the second end of two neighboring 3rd resistor device
Between connect the 4th resistor；Moreover, near RF signal input end MOS transistor body area via one the 4th
Resistor R4 ground connection, the body area near the MOS transistor of RF output end connect back bias voltage, and thus each 4th resistor is formed
One sequentially connected serial link between ground voltage and back bias voltage voltage to carry out series connection partial pressure.
Preferably, the second end connection of the 3rd resistor device of the last one MOS transistor in the multiple MOS transistor
To back bias voltage.
Preferably, the resistance value of all first resistor devices is equal, and wherein the resistance value of first resistor device between 10K Ω
To between 100K Ω.
Preferably, the resistance value of all second resistors is equal, and wherein the resistance value of second resistor between 10K Ω
To between 100K Ω.
Preferably, the resistance value of all 3rd resistor devices is equal, and wherein the resistance value of 3rd resistor device between 10K Ω
To between 100K Ω.
Preferably, the resistance value of all first resistor devices, all second resistors and all 3rd resistor devices is equal.
Preferably, the resistance value of the 4th resistor is roughly equal, and wherein the resistance value of the 4th resistor between 1 Ω extremely
Between 100K Ω.
Moreover, in order to achieve the above technical purposes, according to the present invention, providing a kind of includes above-mentioned SOI RF switch knot
The integrated circuit of structure.
The present invention changes OFF state capacitance size by the direct current biasing operating point of change transistor, to change radio frequency friendship
Flow the distribution of signal.Using SOI RF switch structure according to the present invention, can be effectively improved between each MOS transistor grade
Unbalance voltage distribution problem.
Detailed description of the invention
In conjunction with attached drawing, and by reference to following detailed description, it will more easily have more complete understanding to the present invention
And its adjoint advantage and feature is more easily to understand, in which:
Fig. 1 schematically shows the structural schematic diagram of SOI RF switch structure according to prior art.
Fig. 2 schematically shows the distributions of the unbalance voltage of SOI RF switch structure according to prior art.
Fig. 3 schematically shows the structural schematic diagram of SOI RF switch structure according to the preferred embodiment of the invention.
It should be noted that attached drawing is not intended to limit the present invention for illustrating the present invention.Note that indicating that the attached drawing of structure can
It can be not necessarily drawn to scale.Also, in attached drawing, same or similar element indicates same or similar label.
Specific embodiment
In order to keep the contents of the present invention more clear and understandable, combined with specific embodiments below with attached drawing in of the invention
Appearance is described in detail.
Fig. 3 schematically shows the structural schematic diagram of SOI RF switch structure according to the preferred embodiment of the invention.
As shown in figure 3, SOI RF switch structure according to the preferred embodiment of the invention includes: according to previous MOS crystal
The source electrode of pipe is connected to multiple MOS transistors that the mode of the drain electrode of adjacent the latter MOS transistor is successively arranged side by side,
Described in the source electrode and drain electrode of each MOS transistor in multiple MOS transistors pass through respective first resistor device R1 connection, institute
The grid of each MOS transistor in multiple MOS transistors is stated by respective second resistor R2 connection grid voltage Vg, and
And the drain electrode of first MOS transistor in the multiple MOS transistor is connected to input signal RF_in, and the multiple MOS
The source electrode of the last one MOS transistor in transistor connects output signal RF_out.
Moreover, in SOI RF switch structure according to the preferred embodiment of the invention, in the multiple MOS transistor
The first end for the 3rd resistor device R3 that the body area of each MOS transistor is each connected to respectively, and two neighboring 3rd resistor
A the 4th resistor R4 is connected between the second end of device R3.Moreover, the body of the MOS transistor near RF signal input end
Area is grounded via a 4th resistor R4, and the body area near the MOS transistor of RF output end connects back bias voltage.That is, radio frequency
The transistor of input terminal connects back bias voltage by the 4th resistor in the transistor of RF output end by the 4th resistance-grounded system.
Each 4th resistor forms a sequentially connected serial link so as in ground voltage and negative bias piezoelectricity as a result,
Series connection partial pressure is carried out between pressure.
Series resistance structure is formd by the 4th resistor, every a resistance (3rd resistor device R3) and MOS crystal
The connection of the area Guan Ti.It is grounded close to the metal-oxide-semiconductor body area of RF signal input end, the metal-oxide-semiconductor body area close to output end connects negative lining
Substrate biasing.The present invention can be divided by resistance cascaded structure as a result, so that every grade of MOSFET body area is loaded with different substrates
Bias achievees the purpose that change capacitance size.
Moreover, for example, the as shown in figure 3,3rd resistor device of first MOS transistor in the multiple MOS transistor
A the 4th resistor R4 is can connect on the outside of R3.
Moreover, as shown in figure 3, the 3rd resistor device R3 of the last one MOS transistor in the multiple MOS transistor
Second end is connected to back bias voltage Vsub.
Preferably, the resistance value of all first resistor device R1 is roughly equal.Certainly, these resistor resistance value is roughly equal is
Preferred embodiment；And in a particular embodiment, the resistance value of each first resistor device R1 can be unequal.
Preferably, the resistance value of all second resistor R2 is roughly equal.Certainly, these resistor resistance value is roughly equal is
Preferred embodiment；And in a particular embodiment, the resistance value of each second resistor R2 can be unequal.
Preferably, the resistance value of all 3rd resistor device R3 is roughly equal.Certainly, these resistor resistance value is roughly equal is
Preferred embodiment；And in a particular embodiment, the resistance value of each 3rd resistor device R3 can be unequal.
Preferably, the resistance value of all first resistor device R1, all second resistor R2 and all 3rd resistor device R3
It is roughly equal.Certainly, it is preferred embodiment that these resistor resistance values are equal；And in a particular embodiment, all first resistor devices, institute
There are second resistor and the resistance value of all 3rd resistor devices can also be unequal.
Preferably, the resistance value of the 4th resistor R4 is roughly equal.Preferably, the resistance value of the 4th resistor R4 is between 1
Between Ω to 100K Ω.Certainly, in the specific implementation, the resistance value of the 4th resistor R4 can be bigger.
Preferably, the resistance value of all first resistor device R1, all second resistor R2 and all 3rd resistor device R3
Between 10K Ω to 100K Ω.
Using SOI RF switch structure according to the preferred embodiment of the invention, each MOS transistor grade can be effectively improved
Between unbalance voltage distribution problem.
In addition, including mentioned-above SOI the present invention also provides one kind in other specific embodiments of the invention
The integrated circuit of RF switch structure.
In addition, it should be noted that, unless stated otherwise or point out, the otherwise term " first " in specification, "
Two ", the descriptions such as " third " are used only for distinguishing various components, element, the step etc. in specification, each without being intended to indicate that
Component, element, the logical relation between step or ordinal relation etc..
It is understood that although the present invention has been disclosed in the preferred embodiments as above, above-described embodiment not to
Limit the present invention.For any person skilled in the art, without departing from the scope of the technical proposal of the invention,
Many possible changes and modifications all are made to technical solution of the present invention using the technology contents of the disclosure above, or are revised as
With the equivalent embodiment of variation.Therefore, anything that does not depart from the technical scheme of the invention are right according to the technical essence of the invention
Any simple modifications, equivalents, and modifications made for any of the above embodiments still fall within the range of technical solution of the present invention protection
It is interior.
Claims (8)
1. a kind of SOI RF switch structure, characterized by comprising: be connected to according to the source electrode of previous MOS transistor adjacent
The latter MOS transistor drain electrode multiple MOS transistors for being successively arranged side by side of mode, wherein the multiple MOS crystal
The source electrode and drain electrode of each MOS transistor in pipe is connected by respective first resistor device, in the multiple MOS transistor
The grid of each MOS transistor connects grid voltage by respective second resistor, and in the multiple MOS transistor
The drain electrode of first MOS transistor is connected to input signal, and the last one MOS transistor in the multiple MOS transistor
Source electrode connect output signal；The body area of each MOS transistor in the multiple MOS transistor be each connected to respectively
The first end of three resistors, and the 4th resistor is connected between the second end of two neighboring 3rd resistor device；Moreover, most
Body area close to the MOS transistor of RF signal input end is grounded via a 4th resistor R4, near RF output end
The body area of MOS transistor connect back bias voltage, thus each 4th resistor formed a sequentially connected serial link so as to
Series connection partial pressure is carried out between ground voltage and back bias voltage voltage.
2. SOI RF switch structure according to claim 1, which is characterized in that last in the multiple MOS transistor
The second end of the 3rd resistor device of one MOS transistor is connected to back bias voltage.
3. SOI RF switch structure according to claim 1 or 2, which is characterized in that the resistance value of all first resistor devices
It is equal, and wherein the resistance value of first resistor device between 10K Ω to 100K Ω.
4. SOI RF switch structure according to claim 1 or 2, which is characterized in that the resistance value of all second resistors
It is equal, and wherein the resistance value of second resistor between 10K Ω to 100K Ω.
5. SOI RF switch structure according to claim 1 or 2, which is characterized in that the resistance value of all 3rd resistor devices
It is equal, and wherein the resistance value of 3rd resistor device between 10K Ω to 100K Ω.
6. SOI RF switch structure according to claim 1 or 2, which is characterized in that the resistance value of all 4th resistors
It is equal, and wherein the resistance value of the 4th resistor between 1 Ω to 100K Ω.
7. SOI RF switch structure according to claim 1 or 2, which is characterized in that the 4th resistance is well resistance or high electricity
Resistance rate polysilicon resistance.
8. a kind of including according to claim 1 to the integrated circuit of SOI RF switch structure described in one of 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610596479.9A CN106230419B (en) | 2016-07-27 | 2016-07-27 | SOI RF switch structure and integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610596479.9A CN106230419B (en) | 2016-07-27 | 2016-07-27 | SOI RF switch structure and integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106230419A CN106230419A (en) | 2016-12-14 |
| CN106230419B true CN106230419B (en) | 2019-04-19 |
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| CN201610596479.9A Active CN106230419B (en) | 2016-07-27 | 2016-07-27 | SOI RF switch structure and integrated circuit |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106452400B (en) * | 2016-10-12 | 2019-07-23 | 上海华虹宏力半导体制造有限公司 | Radio-frequency switch circuit |
| CN107026162B (en) * | 2017-04-14 | 2019-11-26 | 上海华虹宏力半导体制造有限公司 | RF switching devices |
| CN108565226B (en) * | 2018-06-27 | 2024-01-23 | 广东工业大学 | Radio frequency switch circuit structure and bad gate detection method |
| CN110086456B (en) * | 2019-04-25 | 2023-03-24 | 河源广工大协同创新研究院 | SOI CMOS radio frequency switch circuit structure only needing positive voltage bias |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7848712B2 (en) * | 2007-05-03 | 2010-12-07 | Intel Corporation | CMOS RF switch for high-performance radio systems |
| CN102474251A (en) * | 2009-07-30 | 2012-05-23 | 高通股份有限公司 | Switches with bias resistors for even voltage distribution |
| CN103795432A (en) * | 2014-03-10 | 2014-05-14 | 锐迪科创微电子（北京）有限公司 | High-linearity multimode radio frequency antenna switch circuit |
| CN103986449A (en) * | 2013-02-11 | 2014-08-13 | 特里奎恩特半导体公司 | Body Bias Switching Device |
-
2016
- 2016-07-27 CN CN201610596479.9A patent/CN106230419B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7848712B2 (en) * | 2007-05-03 | 2010-12-07 | Intel Corporation | CMOS RF switch for high-performance radio systems |
| CN102474251A (en) * | 2009-07-30 | 2012-05-23 | 高通股份有限公司 | Switches with bias resistors for even voltage distribution |
| CN103986449A (en) * | 2013-02-11 | 2014-08-13 | 特里奎恩特半导体公司 | Body Bias Switching Device |
| CN103795432A (en) * | 2014-03-10 | 2014-05-14 | 锐迪科创微电子（北京）有限公司 | High-linearity multimode radio frequency antenna switch circuit |
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| Publication number | Publication date |
|---|---|
| CN106230419A (en) | 2016-12-14 |
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