CN105632899A - Device patterning preparation method in vacuum environment - Google Patents

Abstract

A device patterning preparation method in a vacuum environment comprises the steps of placing a substrate in a vacuum environment; arranging a mask plate for preparing a device pattern on the substrate; connecting the mask plate with a mobile platform for operating the mask plate; positioning the mask plate on the substrate by using the mobile platform; and depositing device material on the substrate by way of physical vapor deposition. The invention further provides a complex device patterning preparation method, and a complex device pattern can be formed by depositing and forming a device pattern of a first type, a device pattern of a second type, ..., a device pattern of a n-th type respectively on substrate regions and combining and overlapping the above device patterns of the first type, the second type, ..., the n-th type. According to the invention, the device patterning preparation method in the vacuum environment has the characteristics of having a simple process, improving the performance of device preparation, avoiding contamination of the device surface and preventing structural damage, and can be used for preparing a complex device pattern through multiple deposition to enhance the device function.

Description

Device Pattern Fabrication Method in Vacuum Environment

technical field

The invention relates to the technical field of micro-nano device preparation technology, in particular to a device pattern preparation method in a vacuum environment.

Background technique

In the research of micro-nano-scale devices, the structure, state and properties of various heterogeneous material contact interfaces are attracting more and more people's attention, and become the focus and hot spot in the field of nano-devices, especially the contact between metals and materials is directly related to load-carrying. The electrical transport performance of the current plays a crucial role in the overall performance of the device.

The processing of fine micro-electrodes and the preparation of insulating layers between electrodes in nano-devices are not only to obtain the conductive connection and insulation protection of fine-sized metal electrodes, but also to prepare the products with good repeatability, high stability and reliability, and excellent performance. devices, which have extremely stringent requirements on the processing technology.

The preparation of patterned devices by the traditional photolithography process is not only complicated, but also easily introduces material surface contamination and structural damage, resulting in changes in the intrinsic physical and chemical properties of the material, affecting the performance and yield of the product to a certain extent. How to prepare patterned high-quality microelectrodes and corresponding insulating protective layers without affecting the original state of the sample surface composition, structural energy level, and physical properties has become a key issue for improving research innovation and breaking through core technologies.

Contents of the invention

The invention provides a device pattern preparation method in a vacuum environment. In a vacuum environment, the physical vapor deposition method is used to interlock with the pattern system to realize the device pattern preparation. The content of the invention is as follows:

A device patterned preparation method in a vacuum environment, which includes the following steps:

(1) placing the substrate in a vacuum environment;

(2) A mask plate for preparing device patterns is provided on the substrate;

(3) The mask plate or the substrate is connected to a mobile platform for mobile operation;

(4) The mobile platform positions the mask plate on the substrate;

(5) The thin film material required for the device is deposited on the substrate by means of physical vapor deposition.

Further, the physical vapor deposition method in step (5) is one of sputtering, thermal evaporation, molecular beam epitaxy, electron beam evaporation, ion plating and laser pulse deposition.

Further, the mobile platform in step (4) is connected to a computer-aided control system, and the computer-aided control system is used to realize the positioning of the mask plate on the substrate by controlling the mobile platform.

Furthermore, the positioning accuracy of the mask is less than 50nm.

Preferably, the mask is flat, and the material of the mask is one of silicon wafers, glass wafers, quartz wafers, metal wafers, ceramic wafers and organic plastic wafers.

Preferably, the thin film material required for the device in step (5) is metal or dielectric.

More preferably, the metal material is a composite material of one or more of gold, silver, titanium, copper, nickel, tungsten, and zinc; the insulating dielectric material is one of silicon nitride, silicon oxide, hafnium oxide, and aluminum oxide. one or more species.

Preferably, the minimum feature size of the device pattern prepared by using the mask plate is in the submicron range.

The present invention also provides a complex device pattern preparation method, wherein the device pattern is prepared by the above method, including the following steps:

(1) Depositing and forming a first-class device pattern in the substrate area;

(2) Depositing and forming a second type of device pattern in the substrate area;

...

(n) Depositing and forming the nth type device pattern in the substrate area;

Combination and superimposition of the device patterns of the first type, the second type, ..., the nth type mentioned above form a complex device pattern.

Further, in the nth type of device pattern, n is a natural number greater than 1.

Beneficial effects of the present invention:

(1) The process is simple, and the performance of device preparation is improved.

The device patterned preparation method in a vacuum environment of the present invention avoids the use of existing complex photolithography processes and technologies, and directly realizes the device patterned preparation in a vacuum environment, ensuring the intrinsic physical and chemical properties of the device without affecting the device The original state of surface composition, structural energy level and physical properties improves the performance of device fabrication.

(2) Avoid device surface contamination and prevent structural damage.

In the device patterned preparation method in a vacuum environment of the present invention, a computer-aided control system is used to realize precise control and movement of the mask in a vacuum environment, ensuring the cleanliness of the device during the preparation process, thereby eliminating the need to use There are problems of device surface contamination and structural damage caused by the coating and removal of photosensitive materials in the photolithography process in the technology.

(3) Prepare complex device graphics to improve device functions.

In the device pattern preparation method in a vacuum environment of the present invention, by continuously changing the shape, size and relative position of the substrate on the mask plate, through multiple depositions, the preparation of complex device patterns can be realized, such as annular Patterns, three-dimensional structure patterns, the greater the complexity of the device, the more functions the device has.

Description of drawings

Fig. 1 is a schematic diagram of the device pattern preparation process in an embodiment of the present invention; wherein Fig. 1a is a schematic diagram of the substrate, Fig. 1b is a schematic diagram of mask positioning, Fig. 1c is a schematic diagram of physical vapor deposition, and Fig. 1d is a schematic diagram of the completion of device pattern preparation .

Fig. 2 is a schematic diagram of the complex device pattern preparation process according to an embodiment of the present invention; wherein Fig. 2a is a schematic diagram of the complex device pattern preparation process 1, Fig. 2b is a complex device pattern preparation process 2 schematic diagram, and Fig. 2 _c is a complex device pattern preparation completed schematic diagram.

detailed description

In order to better illustrate the technical characteristics and structure of the present invention, the following is a detailed description in conjunction with preferred embodiments of the present invention and accompanying drawings.

Example 1

Referring to Fig. 1a to Fig. 1d, the device pattern preparation method in a vacuum environment provided by this embodiment includes the following steps:

(1) The substrate 110 is placed in a vacuum environment, and the surface of the substrate 110 is an area for preparing the device pattern 122;

(2) on the substrate 110, be provided with the mask plate 120 that is used to prepare device pattern 122, mask plate 120 is flat shape, and the material of mask plate 120 is silicon sheet, glass sheet, quartz sheet, metal sheet, ceramic sheet and one of organic plastic sheets. The mask plate 120 also includes a preparation pattern 121 for forming a device pattern, and the prepared device pattern 122 can be changed with the change of the preparation pattern 121;

(3) The mask plate 120 is connected to a mobile platform (not shown) for operating the mask plate 120, or the substrate 110 is connected to a mobile platform for operating the substrate 110, so that the mask plate 120 and the substrate 110 can be relatively Move to adjust the distance between the mask plate and the substrate. The mobile platform is a three-dimensional mobile platform or a multi-dimensional mobile platform composed of a body, a fixture, a sliding seat, a worktable, a spindle, and a feed mechanism.

(4) The mobile platform is connected to a computer-aided control system (not shown in the figure), and the computer-aided control system includes modules such as an input module, an output module, and a multi-dimensional coordinate system. The computer-aided control system realizes the positioning of the mask plate 120 by controlling the mobile platform, and accurately positions the mask plate 120 on the substrate. The preparation pattern 121 on the mask plate 120 corresponds to the designated preparation area on the substrate 110, wherein , the positioning accuracy of the mask plate 120 is less than 50 nm.

(5) Deposit thin film materials required for the device on the substrate 110 by physical vapor deposition, wherein the physical vapor deposition is one of sputtering, thermal evaporation, molecular beam epitaxy, electron beam evaporation, ion plating, and laser pulse deposition The thin film material required for the device is metal or dielectric, the metal material is one or more composite materials of gold, silver, titanium, copper, nickel, tungsten, zinc, and the dielectric material is silicon nitride, silicon oxide, oxide One or more of hafnium and aluminum oxide.

Example 2

This embodiment, such as the preparation method described in Example 1, also provides a patterned preparation method for complex devices, including the following steps:

(1) Depositing and forming a first-class device pattern in the substrate area;

(2) Depositing and forming a second type of device pattern in the substrate area;

...

(n) Depositing and forming the nth type device pattern in the substrate area;

Combination and superimposition of the above-mentioned device patterns of the first category, the second category, ..., the nth category form complex device graphics, wherein n is a natural number greater than 1.

Referring to FIGS. 2 a to 2 c , this embodiment introduces a specific implementation of a method for patterning complex devices when n is equal to 3. By accurately moving and controlling the mask plate, firstly, the first type device pattern 123 is prepared on the substrate 110, and secondly, the second type device pattern 124 is prepared, and finally, by adjusting the size of the prepared pattern on the mask plate, shape and relative position, the third type of device pattern 125 can be prepared, and the two ends of the third type of device pattern 125 are respectively superimposed on the first type of device pattern 123 and the second type of device pattern 124, forming a complex device on the substrate 110 graphics.

It should be noted that the drawings of this embodiment are all in a very simplified form and use imprecise ratios, which are only used for the purpose of conveniently and clearly assisting in describing the embodiment of the present invention.

The above-mentioned embodiments of the present invention are only examples for clearly illustrating the present invention, rather than limiting the implementation of the present invention. For those of ordinary skill in the art, other changes or changes in different forms can be made on the basis of the above description. It is not necessary and impossible to exhaustively list all the implementation manners here. All modifications, equivalent replacements and improvements made within the spirit and principles of the present invention shall be included within the protection scope of the claims of the present invention.

Claims (10)

1. A device patterned preparation method in a vacuum environment, characterized in that it comprises the following steps: (1) placing the substrate (110) in a vacuum environment; (2) a mask plate (120) for preparing device patterns (122) is provided on the substrate (110); (3) the mask plate (120) or the substrate (110) is connected to a mobile platform for mobile operation; (4) the moving platform positions the mask (120) on the substrate (110); (5) Depositing thin film materials required for the device on the substrate (110) by means of physical vapor deposition. 2. The device patterned preparation method in vacuum environment according to claim 1, characterized in that, the physical vapor deposition method described in step (5) is sputtering, thermal evaporation, molecular beam epitaxy, electron beam evaporation, ion plating and one of laser pulse deposition. 3. The device graphic preparation method in a vacuum environment according to claim 1, wherein the mobile platform in step (4) is connected to a computer-aided control system, and the computer-aided control system is used to control the mobile platform to realize Positioning of mask plate (120) on substrate (110). 4 . The device patterned preparation method in a vacuum environment according to claim 3 , characterized in that, the positioning accuracy of the mask ( 120 ) is less than 50 nm. 5. The device patterned preparation method in a vacuum environment according to claim 1, characterized in that, the mask (120) is flat, and the material of the mask (120) is a silicon wafer, a glass wafer, or a quartz wafer , metal sheet, ceramic sheet and organic plastic sheet. 6 . The method for patterning a device in a vacuum environment according to claim 1 , wherein the thin film material required for the device in step (5) is metal or a dielectric. 7 . 7. The method for preparing device patterning in a vacuum environment according to claim 6, wherein the metal material is a composite material of one or more of gold, silver, titanium, copper, nickel, tungsten, and zinc; The dielectric material is one or more of silicon nitride, silicon oxide, hafnium oxide and aluminum oxide. 8. The device patterned preparation method in a vacuum environment according to claim 1, characterized in that, The minimum feature size of the device pattern (122) prepared by using the mask plate (120) is in the submicron range. 9. The complex device patterned preparation method of the method according to claims 1 to 8, characterized in that it comprises the following steps: (1) Depositing and forming a first-class device pattern in the substrate area; (2) Depositing and forming a second type of device pattern in the substrate area; ... (n) Depositing and forming the nth type device pattern in the substrate area; Combination and superimposition of the device patterns of the first type, the second type, ..., the nth type mentioned above form a complex device pattern. 10 . The method for preparing complex device patterns according to claim 9 , wherein, in the nth type of device patterns, n is a natural number greater than 1. 11 .