CN105536789A - Method for preparing trichlorosilane catalyst through hydrogenation dechlorination of silicon tetrachloride - Google Patents
Method for preparing trichlorosilane catalyst through hydrogenation dechlorination of silicon tetrachloride Download PDFInfo
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- 239000003054 catalyst Substances 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 28
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 239000005049 silicon tetrachloride Substances 0.000 title claims abstract description 19
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 239000005052 trichlorosilane Substances 0.000 title claims abstract description 16
- 238000005984 hydrogenation reaction Methods 0.000 title description 10
- 238000006298 dechlorination reaction Methods 0.000 title 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims abstract description 30
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims abstract description 30
- 229940045803 cuprous chloride Drugs 0.000 claims abstract description 30
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 11
- 239000011148 porous material Substances 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 abstract description 13
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 230000008569 process Effects 0.000 abstract description 7
- 238000011156 evaluation Methods 0.000 abstract description 5
- 229910003902 SiCl 4 Inorganic materials 0.000 abstract description 3
- 239000011959 amorphous silica alumina Substances 0.000 abstract description 3
- 239000002912 waste gas Substances 0.000 abstract description 3
- 239000002699 waste material Substances 0.000 abstract description 3
- 238000009776 industrial production Methods 0.000 abstract description 2
- 239000000843 powder Substances 0.000 abstract description 2
- 239000002351 wastewater Substances 0.000 abstract description 2
- 238000001354 calcination Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910002796 Si–Al Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005470 impregnation Methods 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- -1 salt compound Chemical class 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229940108928 copper Drugs 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- ZUPBPXNOBDEWQT-UHFFFAOYSA-N [Si].[Ni].[Cu] Chemical compound [Si].[Ni].[Cu] ZUPBPXNOBDEWQT-UHFFFAOYSA-N 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- WCCJDBZJUYKDBF-UHFFFAOYSA-N copper silicon Chemical group [Si].[Cu] WCCJDBZJUYKDBF-UHFFFAOYSA-N 0.000 description 1
- QUQFTIVBFKLPCL-UHFFFAOYSA-L copper;2-amino-3-[(2-amino-2-carboxylatoethyl)disulfanyl]propanoate Chemical compound [Cu+2].[O-]C(=O)C(N)CSSCC(N)C([O-])=O QUQFTIVBFKLPCL-UHFFFAOYSA-L 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000012854 evaluation process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 229910021484 silicon-nickel alloy Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/72—Copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/002—Mixed oxides other than spinels, e.g. perovskite
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2523/00—Constitutive chemical elements of heterogeneous catalysts
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Catalysts (AREA)
Abstract
本发明涉及一种四氯化硅加氢脱氯制备三氯氢硅的催化剂的方法,采用氯化亚铜作为活性组成,无定型硅铝作为催化剂载体。焙烧后的无定型硅铝粉与一定量的氯化亚铜混合,惰性气氛下高温处理,产物冷却后,即为成品催化剂。该方法制备过程简单、无废水、废气、废渣污染。经催化剂评价表明,在反应温度450℃,压力1.2MPa,H2/SiCl4(mol)=25,空速1000h-1的工艺条件下,转化率可达到30%以上,能够满足工业化生产要求。The invention relates to a catalyst method for preparing trichlorosilane by hydrodechlorination of silicon tetrachloride, using cuprous chloride as an active component and amorphous silicon aluminum as a catalyst carrier. The roasted amorphous silica-alumina powder is mixed with a certain amount of cuprous chloride, treated at high temperature under an inert atmosphere, and the product is cooled to become a finished catalyst. The preparation process of the method is simple, and there is no waste water, waste gas and waste residue pollution. Catalyst evaluation shows that under the process conditions of reaction temperature 450℃, pressure 1.2MPa, H 2 /SiCl 4 (mol)=25, and space velocity 1000h -1 , the conversion rate can reach more than 30%, which can meet the requirements of industrial production.
Description
技术领域technical field
本发明涉及硅提纯领域,具体涉及一种用于四氯化硅加氢制备三氯氢硅的催化剂的制备方法。The invention relates to the field of silicon purification, in particular to a method for preparing a catalyst for hydrogenating silicon tetrachloride to prepare trichlorosilane.
背景技术Background technique
未来化石能源枯竭问题一直困扰着世界各国的能源行业,替代能源尤其是无污染、低成本替代能源是各国积极发展的方向。太阳能作为可再生能源得到各国的重视,作为太阳能电池主要原料的多晶硅及其制备工艺改进理所应当成为研究热点。The depletion of fossil energy in the future has always plagued the energy industry of countries all over the world. Alternative energy, especially non-polluting and low-cost alternative energy, is the direction of active development of various countries. As a renewable energy source, solar energy has attracted the attention of various countries, and polysilicon as the main raw material of solar cells and its preparation process improvement should become a research hotspot.
目前,国内改良西门子法占据多晶硅生产的主流,该方法操作条件的苛刻度相对较低,但是每生产1吨多晶硅便会副产10吨以上四氯化硅,为减少多晶硅生产单耗、降低生产成本、避免环境危害,最有效的方法就是将四氯化硅转化为三氯氢硅,后者作为生产多晶硅的原料回用,理论上讲完全可以达到无污染封闭式生产。At present, the domestic improved Siemens method occupies the mainstream of polysilicon production. The operating conditions of this method are relatively low, but every ton of polysilicon produced will produce more than 10 tons of silicon tetrachloride by-product. In order to reduce the unit consumption of polysilicon production and reduce production The most effective way to reduce costs and avoid environmental hazards is to convert silicon tetrachloride into trichlorosilane, which can be reused as a raw material for polysilicon production. In theory, it can completely achieve pollution-free closed production.
采用冷氢化技术,将四氯化硅转化为三氯氢硅过程中,氢化催化剂起到促进反应、提高反应转化率的作用,国内在催化剂领域进行了大量的研究,依据活性组成大致可分贵金属、镍、铜。CN102838120、CN102909006公开了采用贵金属作为四氯化硅氢化催化剂的活性组分。CN1436725公开了一种四氯化硅氢化生产三氯氢硅的方法,所述镍触媒为粉末状加氢镍触媒。CN102626630、CN102627283、CN102626630公开了一种催化剂及其制备方法和应用,所述催化剂制备过程为:可溶性镍盐、金属M的可溶性盐化合物、能够提供二氧化硅的硅源与能够沉淀镍和/或金属M离子的沉淀剂在溶剂中接触,所得产物过滤、干燥、焙烧。CN101816946公开了一种用于四氯化硅氢化的催化剂的制备方法及其应用,将经过预处理的氯化亚铜和硅粉在搅拌床反应器中混合,氢气保护下加热。所述预处理是指将氯化亚铜加入到四氯化硅中搅拌加热,过滤后在保护气下干燥。CN101941702公开了一种四氯氢硅转化生产三氯氢硅的方法,所述铜基负载催化剂包括载体和负载在载体上的活性成分,所述载体为二氧化硅,所述活性成分为单质铜、氯化铜和氯化亚铜中的一种或多种,载体含量30%-70%,活性成分含量30%-70%。CN102350351公开了一种氢化催化剂及其制备方法,所述催化剂活性成分为铜硅合金、铜镍硅合金、铜硅稀土合金或铜镍硅稀土合金。制备过程包括熔炼、雾化、还原干燥、筛分。上述氢化催化剂制备过程相对复杂,或操作过程要求苛刻,必然带来催化剂制备成本增高。多晶硅领域竞争日益激烈,对生产成本的控制越发严格,作为生产过程中必不可少的氢化催化剂,价格下落已成趋势,因此,开发低成本、高活性的氢化催化剂成为本领域发展必然。In the process of converting silicon tetrachloride into trichlorosilane using cold hydrogenation technology, the hydrogenation catalyst plays a role in promoting the reaction and increasing the conversion rate of the reaction. A lot of research has been done in the field of catalysts in China, and noble metals can be roughly divided according to the active composition. , nickel, copper. CN102838120 and CN102909006 disclose the use of noble metals as active components of silicon tetrachloride hydrogenation catalysts. CN1436725 discloses a method for hydrogenating silicon tetrachloride to produce trichlorosilane, the nickel catalyst is a powdered hydrogenation nickel catalyst. CN102626630, CN102627283, and CN102626630 disclose a catalyst and its preparation method and application. The preparation process of the catalyst is: a soluble nickel salt, a soluble salt compound of metal M, a silicon source that can provide silicon dioxide, and a catalyst that can precipitate nickel and/or The precipitant of metal M ions is contacted in a solvent, and the obtained product is filtered, dried and calcined. CN101816946 discloses a method for preparing a catalyst for the hydrogenation of silicon tetrachloride and its application. The pretreated cuprous chloride and silicon powder are mixed in a stirred bed reactor and heated under the protection of hydrogen. The pretreatment refers to adding cuprous chloride to silicon tetrachloride, stirring and heating, and drying under protective gas after filtering. CN101941702 discloses a method for producing trichlorosilane by converting tetrachlorosilane, the copper-based supported catalyst includes a carrier and an active component loaded on the carrier, the carrier is silicon dioxide, and the active component is elemental copper , cupric chloride and cuprous chloride, the carrier content is 30%-70%, and the active ingredient content is 30%-70%. CN102350351 discloses a hydrogenation catalyst and a preparation method thereof. The active component of the catalyst is a copper-silicon alloy, a copper-nickel-silicon alloy, a copper-silicon rare-earth alloy or a copper-nickel-silicon rare-earth alloy. The preparation process includes smelting, atomization, reduction drying and sieving. The preparation process of the above-mentioned hydrogenation catalyst is relatively complicated, or the operation process is demanding, which will inevitably lead to an increase in the cost of catalyst preparation. The competition in the field of polysilicon is becoming increasingly fierce, and the control of production costs is becoming more stringent. As an indispensable hydrogenation catalyst in the production process, the price has become a trend. Therefore, the development of low-cost, high-activity hydrogenation catalysts has become an inevitable development in this field.
发明内容Contents of the invention
本发明针对上述现有技术中存在的问题,提供了一种四氯化硅加氢脱氯制备三氯氢硅的催化剂的方法,解决了现有技术中三氯氢硅的催化剂制备工艺复杂,成本高的问题。The present invention aims at the problems existing in the above-mentioned prior art, and provides a method for preparing a catalyst for trichlorosilane by hydrodechlorination of silicon tetrachloride, which solves the complicated preparation process of the catalyst for trichlorosilane in the prior art, The problem of high cost.
本发明提供的催化剂制备工艺包括如下步骤:Catalyst preparation technology provided by the invention comprises the steps:
(1)焙烧后的无定型硅铝,比表面150~500m2/g,孔容0.5~1.5mL/g,氧化硅含量1wt%~90wt%,粒度40μm~4000μm,与氯化亚铜进行混合,混合质量比为氯化亚铜:无定型硅铝=2.5~6:1。(1) Amorphous silicon aluminum after roasting, specific surface 150-500m 2 /g, pore volume 0.5-1.5mL/g, silicon oxide content 1wt%-90wt%, particle size 40μm-4000μm, mixed with cuprous chloride , The mixing mass ratio is cuprous chloride:amorphous silicon aluminum=2.5~6:1.
(2)在惰性气体保护下,上述混合物进行加热,升温速度30℃/h~300℃/h,焙烧温度450℃~900℃,恒温时间1min~300min,恒温结束后自然降温。(2) Under the protection of an inert gas, the above mixture is heated, the heating rate is 30°C/h-300°C/h, the roasting temperature is 450°C-900°C, the constant temperature time is 1min-300min, and the temperature is naturally lowered after the constant temperature is completed.
所述的步骤(1)中,焙烧的无定型硅铝为市售商品,其烧残≥95%,烧残条件:550℃恒温3h。In the step (1), the roasted amorphous silicon-alumina is commercially available, and its burnt residue is greater than or equal to 95%. The burnt residue condition: 550° C. for 3 hours at a constant temperature.
所述的步骤(1)中,比表面优选300~400m2/g;所述孔容优选0.7~1.1mL/g;所述氧化硅含量优选为5wt%~85wt%;所述粒度优选为80μm~2000μm。In the step (1), the specific surface is preferably 300-400m 2 /g; the pore volume is preferably 0.7-1.1mL/g; the silicon oxide content is preferably 5wt%-85wt%; the particle size is preferably 80μm ~2000μm.
所述的步骤(1)中,氯化亚铜:无定型硅铝优选质量比为2.8~5.5:1。In the step (1), the preferred mass ratio of cuprous chloride:amorphous silicon aluminum is 2.8˜5.5:1.
所述步骤(2)中,焙烧温度优选500~800℃,恒温时间优选10min~60min。本发明与现有技术相比所具有的优点及效果:In the step (2), the calcination temperature is preferably 500-800° C., and the constant temperature time is preferably 10 min-60 min. Compared with the prior art, the present invention has advantages and effects:
本发明方法中,通过无定型硅铝和氯化亚铜混合,焙烧制备催化剂,具有如下优点:In the method of the present invention, by mixing amorphous silicon aluminum and cuprous chloride, roasting prepares the catalyst, which has the following advantages:
(1)利用氯化亚铜在高温下熔化,通过熔融金属盐直接浸渍的方法,有效避免了水做溶剂进行浸渍过程中存在单次上金属量低的问题。(1) The method of melting cuprous chloride at high temperature and directly impregnating with molten metal salt effectively avoids the problem of low metal content in a single application during impregnation with water as a solvent.
(2)利用氯化亚铜在高温下熔化,通过熔融金属盐直接浸渍的方法,有效避免了水做溶剂进行浸渍过程能耗高、步骤繁杂等问题。(2) Using cuprous chloride to melt at high temperature and directly impregnating with molten metal salt effectively avoids problems such as high energy consumption and complicated steps in the impregnation process using water as a solvent.
(3)利用氯化亚铜在高温下熔化,通过熔融金属盐直接浸渍的方法,有效避免了水做溶剂时,氯化亚铜溶于水时形成的Cl-1对浸渍、搅拌、干燥、焙烧各段的设备腐蚀问题。(3) Utilize cuprous chloride to melt at a high temperature, and directly impregnate by molten metal salt, effectively avoiding when water is used as a solvent, the Cl -1 formed when cuprous chloride is dissolved in water has a negative effect on impregnation, stirring, drying, Corrosion of equipment in each section of roasting.
(4)利用氯化亚铜在高温下熔化,通过熔融金属盐直接浸渍的方法,有效避免了水做溶剂时存在的焙烧段含氯离子废气的排放问题,减少了相关的治污设备和运行成本,还解决了浸渍废液的储存、排放问题。(4) The method of melting cuprous chloride at high temperature and directly impregnating with molten metal salt effectively avoids the discharge of chlorine ion-containing waste gas in the roasting section when water is used as a solvent, and reduces the related pollution control equipment and operation. It also solves the storage and discharge problems of the impregnation waste liquid.
(5)本方法制备的催化剂,由于载体的存在,可有效避免加氢脱氯过程中催化活性组分团聚现象。(5) The catalyst prepared by the method can effectively avoid the agglomeration of catalytically active components in the process of hydrodechlorination due to the presence of the carrier.
本发明公开的催化剂制备方法,经评价,评价结果表明,本发明的催化剂用于四氯化硅氢化制备三氯氢硅具有较高的活性。The preparation method of the catalyst disclosed by the invention is evaluated, and the evaluation results show that the catalyst of the invention has relatively high activity when used for hydrogenating silicon tetrachloride to prepare trichlorosilane.
具体实施方式detailed description
下面的实施例将就本发明提供的方法予以进一步的说明和阐述,但是并不限制本发明。The following examples will further illustrate and illustrate the method provided by the present invention, but do not limit the present invention.
实施例1Example 1
(1)焙烧后的无定型硅铝,比表面150m2/g,孔容0.7mL/g,氧化硅含量5wt%,粒度125μm,与氯化亚铜进行混合,混合质量比为氯化亚铜:无定型硅铝=2.8:1。(1) Amorphous silicon aluminum after roasting, specific surface 150m 2 /g, pore volume 0.7mL/g, silicon oxide content 5wt%, particle size 125μm, mixed with cuprous chloride, the mixing mass ratio is cuprous chloride : Amorphous Si-Al = 2.8:1.
(2)在惰性气体保护下,上述混合物进行加热,升温速度50℃/h,焙烧温度450℃,恒温时间30min,恒温结束后,自然降温,得到成品催化剂。(2) Under the protection of an inert gas, the above mixture was heated with a heating rate of 50°C/h, a calcination temperature of 450°C, and a constant temperature time of 30 minutes. After the constant temperature was completed, the temperature was naturally lowered to obtain a finished catalyst.
实施例2Example 2
其他同实施例1,区别在于步骤(2)中,焙烧时温度为600摄氏度,恒温30min。Others are the same as Example 1, the difference is that in step (2), the temperature during the roasting is 600 degrees centigrade, and the constant temperature is 30min.
实施例3Example 3
(1)焙烧后的无定型硅铝,比表面500m2/g,孔容1.0mL/g,氧化硅含量50wt%,粒度200μm,与氯化亚铜进行混合,混合质量比为氯化亚铜:无定型硅铝=4.0:1。(1) Amorphous silicon aluminum after roasting, specific surface 500m 2 /g, pore volume 1.0mL/g, silicon oxide content 50wt%, particle size 200μm, mixed with cuprous chloride, the mixing mass ratio is cuprous chloride : Amorphous Si-Al = 4.0:1.
(2)在惰性气体保护下,上述混合物进行加热,升温速度100℃/h,焙烧温度600℃,恒温时间60min,恒温结束后,自然降温,得到成品催化剂。(2) Under the protection of an inert gas, the above mixture was heated with a heating rate of 100°C/h, a calcination temperature of 600°C, and a constant temperature time of 60 minutes. After the constant temperature was completed, the temperature was naturally lowered to obtain a finished catalyst.
实施例4Example 4
(1)焙烧后的无定型硅铝,比表面410m2/g,孔容1.5mL/g,氧化硅含量30wt%,粒度300μm,与氯化亚铜进行混合,混合质量比为氯化亚铜:无定型硅铝=5.6:1。(1) Amorphous silicon aluminum after roasting, specific surface 410m 2 /g, pore volume 1.5mL/g, silicon oxide content 30wt%, particle size 300μm, mixed with cuprous chloride, the mixing mass ratio is cuprous chloride : Amorphous Si-Al = 5.6:1.
(2)在惰性气体保护下,上述混合物进行加热,升温速度100℃/h,焙烧温度800℃,恒温时间30min,恒温结束后,自然降温,得到成品催化剂。(2) Under the protection of an inert gas, the above mixture was heated at a heating rate of 100°C/h, a calcination temperature of 800°C, and a constant temperature time of 30 minutes. After the constant temperature was completed, the temperature was naturally lowered to obtain a finished catalyst.
实施例5Example 5
(1)焙烧后的无定型硅铝,比表面150m2/g,孔容0.5mL/g,氧化硅含量1wt%,粒度40μm,与氯化亚铜进行混合,混合质量比为氯化亚铜:无定型硅铝=2.5:1。(1) Amorphous silicon aluminum after roasting, specific surface 150m 2 /g, pore volume 0.5mL/g, silicon oxide content 1wt%, particle size 40μm, mixed with cuprous chloride, the mixing mass ratio is cuprous chloride : Amorphous Si-Al = 2.5:1.
(2)在惰性气体保护下,上述混合物进行加热,升温速度30℃/h,焙烧温度450℃,恒温时间300min,恒温结束后,自然降温,得到成品催化剂。(2) Under the protection of an inert gas, the above mixture was heated with a heating rate of 30°C/h, a calcination temperature of 450°C, and a constant temperature time of 300min. After the constant temperature was completed, the temperature was naturally lowered to obtain a finished catalyst.
实施例6Example 6
(1)焙烧后的无定型硅铝,比表面≥150m2/g,孔容≥0.5mL/g,氧化硅含量90wt%,粒度4000μm,与氯化亚铜进行混合,混合质量比为氯化亚铜:无定型硅铝=6:1。(1) Amorphous silicon aluminum after roasting, specific surface ≥ 150m 2 /g, pore volume ≥ 0.5mL/g, silicon oxide content 90wt%, particle size 4000μm, mixed with cuprous chloride, the mixing mass ratio is Cuprous: amorphous silicon aluminum = 6:1.
(2)在惰性气体保护下,上述混合物进行加热,升温速度300℃/h,焙烧温度900℃,恒温时间1min,恒温结束后,自然降温,得到成品催化剂。(2) Under the protection of an inert gas, the above mixture was heated at a heating rate of 300 °C/h, a calcination temperature of 900 °C, and a constant temperature time of 1 min. After the constant temperature was completed, the temperature was naturally lowered to obtain a finished catalyst.
实施例7Example 7
所述的步骤(1)中,焙烧的无定型硅铝为市售商品,其烧残95%,烧残条件:550℃恒温3h;比表面300m2/g;孔容0.7mL/g;氧化硅含量为5wt%;粒度为80μm;氯化亚铜:无定型硅铝质量比为2.8:1。在惰性气体保护下,上述混合物进行加热,焙烧温度500℃,恒温时间10min。其它步骤同实施例1。In the step (1), the roasted amorphous silicon-alumina is commercially available, and its burnt residue is 95%. The burnt residue conditions are: constant temperature at 550°C for 3 hours; specific surface area 300m 2 /g; pore volume 0.7mL/g; oxidation The silicon content is 5 wt %; the particle size is 80 μm; the mass ratio of cuprous chloride: amorphous silicon aluminum is 2.8:1. Under the protection of an inert gas, the above mixture was heated at a calcination temperature of 500° C. and a constant temperature time of 10 minutes. Other steps are the same as in Example 1.
实施例8Example 8
所述的步骤(1)中,焙烧的无定型硅铝为市售商品,其烧残≥95%,烧残条件:550℃恒温3h;比表面300m2/g;孔容0.7mL/g;氧化硅含量为85wt%;粒度为2000μm;氯化亚铜:无定型硅铝质量比为5.5:1。在惰性气体保护下,上述混合物进行加热,焙烧温度800℃,恒温时间60min。其它步骤同实施例1。In the step (1), the roasted amorphous silicon-alumina is commercially available, and its burnt residue is ≥95%. The burnt residue conditions are: constant temperature at 550°C for 3 hours; specific surface area: 300m 2 /g; pore volume: 0.7mL/g; The silicon oxide content is 85wt%; the particle size is 2000 μm; the mass ratio of cuprous chloride: amorphous silicon aluminum is 5.5:1. Under the protection of an inert gas, the above mixture was heated, the calcination temperature was 800° C., and the constant temperature time was 60 minutes. Other steps are the same as in Example 1.
实施例9Example 9
采用上述实施例1~8制备的催化剂进行评价,评价工艺条件:采用固定床反应器,在一定反应温度,压力1.2MPa,H2/SiCl4(mol)=25,空速1000h-1的工艺条件下,测定反应20h时的产物,计算四氯化硅的转化率,本实施例所述四氯化硅转化率定义为:The catalysts prepared in the above-mentioned Examples 1-8 are used for evaluation, and the evaluation process conditions are as follows: a fixed-bed reactor, at a certain reaction temperature, a pressure of 1.2 MPa, H 2 /SiCl 4 (mol)=25, and a process with a space velocity of 1000 h −1 Under the condition, measure the product when reacting 20h, calculate the conversion rate of silicon tetrachloride, the conversion rate of silicon tetrachloride described in the present embodiment is defined as:
本发明提供了一种四氢化硅加氢脱氯制备三氯氢硅的催化剂及其制备方法,该方法制备过程简单、无废水、废气、废渣污染。该催化剂采用氯化亚铜作为活性组成,无定型硅铝作为催化剂载体。焙烧后的无定型硅铝粉与一定量的氯化亚铜混合,惰性气氛下高温处理,产物冷却后,即为成品催化剂。经催化剂评价表明,在反应温度450℃,压力1.2MPa,H2/SiCl4(mol)=25,空速1000h-1的工艺条件下,转化率可达到30%,能够满足工业化生产要求。The invention provides a catalyst for preparing trichlorosilane by hydrodechlorination of tetrahydrogen silicon and a preparation method thereof. The preparation process of the method is simple and free from waste water, waste gas and waste residue pollution. The catalyst uses cuprous chloride as an active component, and amorphous silica-alumina as a catalyst carrier. The roasted amorphous silica-alumina powder is mixed with a certain amount of cuprous chloride, treated at high temperature under an inert atmosphere, and the product is cooled to become a finished catalyst. Catalyst evaluation shows that under the process conditions of reaction temperature 450°C, pressure 1.2MPa, H 2 /SiCl 4 (mol)=25, and space velocity 1000h -1 , the conversion rate can reach 30%, which can meet the requirements of industrial production.
表1不同实施例的评价数据The evaluation data of different embodiments of table 1
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