CN1053519C - High frequency high stablility sheet multilayer ceramic capacitor porcelain - Google Patents
High frequency high stablility sheet multilayer ceramic capacitor porcelain Download PDFInfo
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- CN1053519C CN1053519C CN96118944A CN96118944A CN1053519C CN 1053519 C CN1053519 C CN 1053519C CN 96118944 A CN96118944 A CN 96118944A CN 96118944 A CN96118944 A CN 96118944A CN 1053519 C CN1053519 C CN 1053519C
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- caco
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- 229910052573 porcelain Inorganic materials 0.000 title claims description 16
- 239000003985 ceramic capacitor Substances 0.000 title claims description 10
- 239000003607 modifier Substances 0.000 claims abstract description 10
- 239000000919 ceramic Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 6
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims description 8
- 239000006184 cosolvent Substances 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910000019 calcium carbonate Inorganic materials 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000004327 boric acid Substances 0.000 claims 1
- 239000003990 capacitor Substances 0.000 abstract description 4
- 239000002904 solvent Substances 0.000 abstract description 2
- 229910010293 ceramic material Inorganic materials 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000008240 homogeneous mixture Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 102220311149 rs41271047 Human genes 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
The present invention relates to a ceramic material for a sheet type multilayer ceramic dielectric capacitor with high frequency and high stability. The ceramic material is baked by the following three materials: 77.0 to 90.5 wt% of main crystal phase, 4 to 13.5 wt% of modifier and 4 to 9.7 wt% of ceramic preparing auxiliary solvent. The finished product has the advantages of stable electric properties and good technological properties, and can be produced in bulk.
Description
The present invention relates to the porcelain of high frequency, high stable chip multilayer ceramic capacitor.
At present, how intermediate sintering temperature high frequency, high stable dielectric ceramic composition are with BaNd
2Ti
5O
14Be base, employing BaO-Nd is arranged
2O
3-TiO
2The ternary system material, BaO-Nd
2O
3-TiO
2-Bi
2O
3System and BaO-Nd
2O
3-TiO
2-PbO based material, but above-mentioned porcelain all must just can sinter porcelain at the high temperature about 1250 degree, so can only use as monolithic medium and microwave dielectric material, development along with hybrid microelectronics, the introduction of intermediate sintering temperature chip multilayer ceramic capacitor automatic assembly line, existing a plurality of units carry out the development to porcelain, but do not see generally promoting the use of of this class porcelain yet.
The porcelain that the purpose of this invention is to provide a kind of high frequency high stable chip multilayer ceramic capacitor, for product lot quantity production, its manufactured goods electric property is stable, and processing performance is good.
Component of the present invention is formed by the mixture of the following three kinds of materials of roasting,
1) about 77.0%～90.5% (Wt) pottery preparation principal crystalline phase,
The ratio of calculating with oxide is:
Brium carbonate (BaCO
3) 11.0%～26.5% (Wt)
Titanium dioxide (TiO
2) 29.0%～44.3% (Wt)
Neodymia (Nd
2O
3) 20.5%～35.5% (Wt)
Bismuth oxide (Bi
2O
3) 5.2%～13.0% (Wt)
Tin ash (SnO
2) 0.2%～0.1% (Wt)
Calcium carbonate (CaCO
3) 0.01%～0.1% (Wt)
2) about 4%～13.5% (Wt) pottery preparation modifier,
The ratio of calculating with oxide is:
Red lead (Pb
3O
4) 37.5%～52% (Wt)
Calcium carbonate (CaCO
3) 8.5%～28.5% (Wt)
Titanium dioxide (TiO
2) 23.5%～39.5% (Wt) 3) the ceramic cosolvent of about 4.0%～9.7% (Wt),
The ratio of calculating with oxide is:
Yellow alumina (PbO) 38.0%～52% (Wt)
Zinc oxide (ZnO) 26.0%～34.5% (Wt)
Silicon dioxide (SiO
2) 4.0%～10.0% (Wt)
Boric acid (H
3BO
3) 10.0%～19.5% (Wt) be of the present invention as follows than the optimum formula scope: 1) principal crystalline phase: 79.0%～89.0% (Wt)
In oxide calculating ratio be: BaCO
313.5%～23.5% (Wt)
(Wt) TiO
2 34.0％～42.5％(Wt)
Nd
2O
3 23.5％～33.0％(Wt)
Bi
2O
3 6.3％～11.5％(Wt)
SnO
2 0.2％～0.5％(Wt)
CaCO
30.01%～0.1% (Wt) 2) modifier: 5.0%～13.5% (Wt)
In oxide calculating ratio be: Pb
3O
441.0%～49.5% (Wt)
(Wt) CaCO
3 15.5％～25.0％(Wt)
TiO
227.5%～36.0% (Wt) 3) cosolvent: 5.0%～8.0% (Wt)
In oxide calculating ratio be: PbO 41.0%～50.0% (Wt)
(Wt) ZnO 28.0％～32.5％(Wt)
SiO
2 5.0％～10.0％(Wt)
H
3BO
312.0%～17.5% (Wt) optimum formula scope of the present invention is as follows, and 1) principal crystalline phase: 83% (Wt)
In oxide calculating ratio be: BaCO
320.0%～22.4% (Wt)
(Wt) TiO
2 36.6％～40.5％(Wt)
Nd
2O
3 28％～32.3％(Wt)
Bi
2O
3 6.3％～10.4％(Wt)
SnO
2 0.23％～0.30％(Wt)
CaCO
30.01%～0.015% (Wt) 2) modifier: 10.3% (Wt)
In oxide calculating ratio be: Pb
3O
440%～50% (Wt)
(Wt) CaCO
3 16％～23％(Wt)
TiO
228%～37% (Wt) 3) cosolvent: 6.7% (Wt)
In oxide calculating ratio be: PbO 38%～52% (Wt)
(Wt) ZnO 25％～26％(Wt)
SiO
2 6％～8％(Wt)
H
3BO
313%～18% (Wt) is existing to be further described the present invention in conjunction with the embodiments: table 1 is in conjunction with the formula table 1 of 4 samples of the present invention
| Group group preface composition number | Principal crystalline phase | The modifier proportion | The flux ratio | |
| CaTiO 3 | PbTiO 3 | |||
| 1 | 83.0 | 5.15 | 5.15 | 6.70 |
| 2 | 83.0 | 5 | 5.15 | 6.85 |
| 3 | 83.0 | 5.15 | 5 | 6.85 |
| 4 | 84.5 | 4.4 | 4.4 | 6.70 |
In the described prescription of table 1, require to use chemical pure or analyze pure-oxide, wherein principal crystalline phase becomes homogeneous mixture with the deionized water wet mixed by formula rate in container, is placed in the stainless steel disc after mixing and with homogeneous mixture and dries, be ground into fine powder then, and fine powder is placed on Al
2O
3In the crucible, put into the calcining of tunnel kiln,, be ground into fine powder again 1140～1180 degree roastings 2～3.5 hours.
Modifier burning piece is with chemical pure or analyze pure P
B3O
4, C
aCO
3, TiO
2Press formula rate and mix oven dry, be ground into fine powder, be placed on AL then with said method
2O
3In the crucible,, pulverize standby then 1140～1220 degree roastings 1.5～2.5 hours.
Flux is with chemical pure or analyze pure P
bO, Z
nO, S
1O
2, H
3BO
3, use and produce method that principal crystalline phase burns piece and mix and dryout by formula rate, be ground into fine powder, be placed on Al then
2O
3In the crucible,, pulverize standby then 350～550 degree roastings 1～1.5 hour.
Burning pieces such as above-mentioned principal crystalline phase, modifier, cosolvent are put into the M45L ultra-fine grinding mill in proportion, and extra-fine grinding 25～45 hours becomes about particle diameter 1.0 μ m, and specific area is 3.2 ± 0.2m
2The fine powder of/g.
Fine powder is added organic bond and solvent, make film and make the multilayer ceramic capacitor that the high frequency high stable uses with banded casting molding processes, the multilayer ceramic capacitor of preparation has dielectric constant greater than 90, at 1MHz, Q value under the 1Vrms is 4000, Tcc is at 0 ± 30ppm/ ℃ in-55～+ 125 degree scopes, and the preferred temperature that capacitor is made in roasting is between 1100～1140 degree, is the best with 1120 degree.
The performance of above-mentioned each sample is shown in the table 2.
| The electric preface of number is according to the property energy | K 25℃ | Ri 25℃100V Ω | Q value 1MHz, 1V | Tcc(PPm/℃) | Withstand voltage V/mil | The firing temperature temperature retention time | |
| -55～+25℃ | +25～+125℃ | ||||||
| 1# | 89 | ＞10 11 | 3500 | -18.9 | +23.41 | 1150 | 1120℃/2h |
| 2# | 88 | ＞10 11 | 2500 | -21.2 | +20.6 | 1130 | 1120℃/2h |
| 3# | 90 | ＞10 11 | 2000 | -19.8 | +25.6 | 1110 | 1120℃/2h |
| 4# | 89.5 | ＞10 11 | 1800 | -17.6 | +19.8 | 1125 | 1130℃/2h |
The described number of degrees of this specification are centigrade.
The present invention our experiments show that:
1) this porcelain has system's maturity, and the domestic raw material of used multiple different purity is had compatible preferably, raw material wide material sources, characteristics such as abundance.
2) porcelain technology, multilayer chip capacitor technology had good repeatability, stability, consistency.
3) it is little that this porcelain has loss, and insulation resistance is good, withstand voltage height, and have excellent Jie's temperature characteristics, aging characteristics, characteristics such as product qualified rate height.
4) this porcelain porcelain of substituting import one fully is that country saves foreign exchange, and improves the competitiveness of homemade sheets type ceramic dielectric capacitor.
Claims (3)
1, a kind of high frequency, high stable chip multilayer ceramic capacitor porcelain is characterized in that the dielectric ceramic component is formed by the mixture of three kinds of materials below the roasting,
1) 77.0%～90.5% (Wt) pottery preparation principal crystalline phase,
The ratio of calculating with oxide is:
Brium carbonate (BaCO
3) 11.0%～26.5% (Wt)
Titanium dioxide (TiO
2) 29.0%～44.3% (Wt)
Neodymia (Nd
2O
3) 20.5%～35.5% (Wt)
Bismuth oxide (Bi
2O
3) 5.2%～13.0% (Wt)
Tin ash (SnO
2) 0.2%～0.1% (Wt)
Calcium carbonate (CaCO
3) 0.01%～0.1% (Wt)
2) 4%～13.5% (Wt) pottery preparation modifier,
The ratio of calculating with oxide is:
Red lead (Pb
3O
4) 37.5%～52% (Wt)
Calcium carbonate (CaCO
3) 8.5%～28.5% (Wt)
Titanium dioxide (TiO
2) 23.5%～39.5% (Wt)
3) the ceramic cosolvent of 4.0%～9.7% (Wt),
The ratio of calculating with oxide is:
Yellow alumina (PbO) 38.0%～52% (Wt)
Zinc oxide (ZnO) 26.0%～34.5% (Wt)
Silicon dioxide (SiO
2) 4.0%～10.0% (Wt)
Boric acid (H
2BO
3) 10.0%～19.5% (Wt)
2, a kind of high frequency according to claim 1, high stable chip multilayer ceramic capacitor porcelain is characterized in that its prescription can be made up of following,
1) principal crystalline phase: 79.0%～89.0% (Wt)
In oxide calculating ratio be: BaCO
313.5%～23.5% (Wt)
(Wt) TiO
2 34.0％～42.5％(Wt)
Nd
2O
3 23.5％～33.0％(Wt)
Bi
2O
3 6.3％～11.5％(Wt)
SnO
2 0.2％～0.5％(Wt)
CaCO
3 0.01％～0.1％(Wt)
2) modifier: 5.0%～13.5% (Wt)
In oxide calculating ratio be: Pb
3O
441.0%～49.5% (Wt)
(Wt) CaCO
3 15.5％～25.0％(Wt)
TiO
2 27.5％～36.0％(Wt)
3) cosolvent: 5.0%～8.0% (Wt)
In oxide calculating ratio be: PbO 41.0%～50.0% (Wt)
(Wt) ZnO 28.0％～32.5％(Wt)
SiO
2 5.0％～10.0％(Wt)
H
3BO
3 12.0％～17.5％(Wt)
3, a kind of high frequency according to claim 1, high stable chip multilayer ceramic capacitor porcelain is characterized in that its optimum formula ratio is,
1) principal crystalline phase: 83% (Wt)
In oxide calculating ratio be: BaCO
320.0%～22.4% (Wt)
(Wt) TiO
2 36.6％～40.5％(Wt)
Nd
2O
3 28％～32.3％(Wt)
Bi
2O
3 6.3％～10.4％(Wt)
SnO
2 0.23％～0.30％(Wt)
CaCO
30.01%～0.015% (Wt) 2) modifier: 10.3% (Wt)
In oxide calculating ratio be: Pb
3O
440%～50% (Wt)
(Wt) CaCO
3 16％～23％(Wt)
TiO
228%～37% (Wt) 3) cosolvent: 6.7% (Wt)
In oxide calculating ratio be: PbO 38%～52% (Wt)
(Wt) ZnO 25％～26％(Wt)
SiO
2 6％～8％(Wt)
H
3BO
3 13％～18％(Wt)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN96118944A CN1053519C (en) | 1996-12-23 | 1996-12-23 | High frequency high stablility sheet multilayer ceramic capacitor porcelain |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN96118944A CN1053519C (en) | 1996-12-23 | 1996-12-23 | High frequency high stablility sheet multilayer ceramic capacitor porcelain |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1187016A CN1187016A (en) | 1998-07-08 |
| CN1053519C true CN1053519C (en) | 2000-06-14 |
Family
ID=5125442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN96118944A Expired - Fee Related CN1053519C (en) | 1996-12-23 | 1996-12-23 | High frequency high stablility sheet multilayer ceramic capacitor porcelain |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1053519C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002211975A (en) * | 2001-01-10 | 2002-07-31 | Murata Mfg Co Ltd | Nonreducing dielectric ceramic, ceramic electronic parts and multilayer ceramic capacitor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1067037A (en) * | 1992-05-11 | 1992-12-16 | 上海无线电六厂 | High-k, high stable, low-loss ceramic medium material and manufacture method |
-
1996
- 1996-12-23 CN CN96118944A patent/CN1053519C/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1067037A (en) * | 1992-05-11 | 1992-12-16 | 上海无线电六厂 | High-k, high stable, low-loss ceramic medium material and manufacture method |
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| Publication number | Publication date |
|---|---|
| CN1187016A (en) | 1998-07-08 |
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