CN105336640B - A kind of reaction chamber and consersion unit - Google Patents
A kind of reaction chamber and consersion unit Download PDFInfo
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- CN105336640B CN105336640B CN201410269591.2A CN201410269591A CN105336640B CN 105336640 B CN105336640 B CN 105336640B CN 201410269591 A CN201410269591 A CN 201410269591A CN 105336640 B CN105336640 B CN 105336640B
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- reaction chamber
- covering
- stomata
- lag
- side wall
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- 239000012495 reaction gas Substances 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract 1
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Abstract
The present invention provides a kind of reaction chamber and consersion unit, including the pedestal and technique component for carrying workpiece to be machined, the technique component includes covering, the covering includes upper covering and lower covering, the bottom of the lower covering is U-type groove structure, the U-lag surrounds the bottom of the upper covering, and the U-lag is provided at least one first stomata close to the lower part of the side of the reaction chamber side wall.In the technical solution of reaction chamber and consersion unit provided by the invention, gas source inlet is closed in the bottom that the first stomata is provided with lower covering, and reaction gas can be directly entered processing region.By above-mentioned intake method, what reaction gas can be full and uniform diffuses to reaction chamber, so that influencing proportional components and raising reaction gas of the reaction gas in reaction chamber enters the diffusion effect and uniformity of reaction chamber, to obtain better film.
Description
Technical field
The present invention relates to semiconductor process technique field more particularly to a kind of reaction chambers and consersion unit.
Background technique
In the manufacture of integrated circuit and display, the substrate of such as semiconductor wafer cartridge display panel is placed on reaction
In chamber, the process conditions set in reaction chamber with deposition materials over the substrate or etch the substrate.Typical reaction chamber
Room includes the peripheral wall for surrounding heating region, the substrate support for being used to support substrate, for providing processing gas in chamber
The gas source of body applies energy to gas to handle the gas activator of substrate, and the exhaust apparatus for keeping pressure.This is anti-
Answering chamber may include sputtering (PVD), chemical vapor deposition (CVD) and etching cavity.
In sputtering technology, the processing gas including inert gas and/or reaction gas is supplied in reaction chamber, and
Electrical bias is applied to target, promotes sputter material to hit from target and form a film in substrate to form high-energy particle bombardment target.But
It is that target material also deposits on the indoor element such as chamber wall, and becomes pollution sources.Therefore needing to be arranged in chamber can prevent
Sputter material is deposited directly to the technique component in chamber wall and other chamber components.
Fig. 1 is the structural schematic diagram of reaction chamber in the prior art.As shown in Figure 1, reaction chamber 100 includes chamber wall
102, technique component 200 and pedestal 106.Technique component 200 and the encirclement of pedestal 106 form processing region 101.Chamber wall 102 wraps
Include chamber body 103 and side wall 104.Fig. 2 is the part A schematic enlarged-scale view of reaction chamber shown in Fig. 1.As shown in Fig. 2, technique groups
Part 200 includes covering 201, shield ring 202 and deposition ring 203.Fig. 3 is the structural schematic diagram of covering in the prior art.Such as
Shown in Fig. 3, covering 201 includes upper covering 211 and lower covering 221.The middle part of lower covering 221 is provided with stomata 204.Instead
It answers gas to enter reaction chamber 100 from gas source inlet 105, after the stomata 204 by lower 221 middle part of covering, goes further downwards to
The bottom end of covering 211 enters processing region 101 by the bottom end gap of upper covering 211.Pass through above-mentioned intake method, reaction
Gas cannot be full and uniform diffuse to reaction chamber 100 so that influence deposition film in the property of Waffer edge, thus
Obtain the poor film of uniformity.
Summary of the invention
The present invention provides a kind of reaction chamber and consersion unit, to react for solving intake method in the prior art
Gas cannot be full and uniform diffuse to reaction chamber so that influence deposition film in the property of Waffer edge, acquisition
The poor problem of uniformity of film.
To achieve the above object, the present invention provides a kind of reaction chamber, including for carrying workpiece to be machined pedestal and
Technique component, the technique component include covering, and the covering includes upper covering and lower covering, the lower covering
The inside sidewalls of the reaction chamber are looped around, the upper covering is looped around on the inside of the lower covering, the lower covering
Bottom be U-type groove structure, the U-lag surrounds the bottom of the upper covering, and the U-lag is close to the reaction chamber
The lower part of the side of room side wall is provided at least one first stomata.
Preferably, the bottom of the upper covering is " Z " type structure, and the U-lag of the lower covering is far from described anti-
The side of chamber sidewall is answered to be looped around on the inside of " Z " the type structure of the upper covering.
Preferably, the upper covering bottom fall side of " Z " the type structure far from the reaction chamber side wall lower part open
There is at least one second stomata.
Preferably, first stomata is not overlapped with projection of second stomata in the reaction chamber sidewall direction.
Preferably, the technique component further includes shield ring, and the shield ring is located at the pedestal towards one end of pedestal
The top at the edge of upper surface, the shield ring areType.
Preferably, the shield ring includes inner ring and outer rings, and the inner ring and outer ring define downward open end, under described
The U-lag of covering is located in the open end far from the side of the reaction chamber side wall.
Preferably, the shield ring far from one end of pedestal be located at the upper covering bottom fall " Z " type structure far from institute
State the top of the side of reaction chamber side wall.
Preferably, multiple first stomatas are uniformly arranged on the lower covering bottom U-type groove close to the reaction chamber
The lower part of the side of room side wall.
Preferably, multiple second stomatas are uniformly arranged on the upper covering bottom and fall " Z " type structure far from described
The side of reaction chamber side wall.
The present invention also provides a kind of consersion units, including any of the above-described reaction chamber.
The invention has the following advantages:
In the technical solution of reaction chamber provided by the invention, gas source is closed in the bottom that the first stomata is provided with lower covering
Import, reaction gas can be directly entered processing region.By above-mentioned intake method, diffusion that reaction gas can be full and uniform
To reaction chamber, so that influencing proportional components and raising reaction gas of the reaction gas in reaction chamber enters reaction chamber
The diffusion effect and uniformity of room, to obtain better film.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of reaction chamber in the prior art；
Fig. 2 is the part A schematic enlarged-scale view of reaction chamber shown in Fig. 1；
Fig. 3 is the structural schematic diagram of covering in the prior art；
Fig. 4 is a kind of structural schematic diagram of reaction chamber provided by one embodiment of the present invention；
Fig. 5 is the part B schematic enlarged-scale view of reaction chamber shown in Fig. 4；
Fig. 6 is a kind of structural schematic diagram of covering provided by one embodiment of the present invention；
Fig. 7 is the structural schematic diagram of the upper covering of covering shown in Fig. 6；
Fig. 8 is the structural schematic diagram of the lower covering of covering shown in Fig. 6.
Specific embodiment
To make those skilled in the art more fully understand technical solution of the present invention, the present invention is mentioned with reference to the accompanying drawing
The reaction chamber and consersion unit of confession are described in detail.
Fig. 4 is a kind of structural schematic diagram of reaction chamber provided by one embodiment of the present invention.As shown in figure 4, reaction chamber
Room 100 includes technique component 200.Preferably, reaction chamber 100 further includes chamber wall 102 and pedestal 106.Technique component 200 with
The encirclement of pedestal 106 forms processing region 101.Chamber wall 102 includes chamber body 103 and side wall 104.Fig. 5 is reaction shown in Fig. 4
The part B schematic enlarged-scale view of chamber.As shown in figure 5, technique component 200 includes covering 201.The covering 201 includes upper
Covering 211 and lower covering 221.The lower covering ring 221 is wound on the inside sidewalls of the reaction chamber 100, it is described on
Covering 211 is looped around on the inside of the lower covering, and the bottom of the lower covering 221 is U-type groove structure, the U-lag
The bottom of the upper covering 211 is surrounded, the U-lag is provided at least close to the lower part of the side of the reaction chamber side wall
One the first stomata 205.Preferably, the bottom of the upper covering 211 is " Z " type structure, the U of the lower covering 221
Shape slot is looped around on the inside of " Z " the type structure of the upper covering 211 far from the side of the reaction chamber side wall.The upper screening
The least significant end of the bottom of shield 211 and lower covering 221 form gap.
In one embodiment, technique component 200 further includes deposition ring 203, and the deposition ring 203 is located on pedestal 106
And around pedestal 106.In another embodiment, the technique component 200 further includes shield ring 202, the shield ring 202
It is located at the top at the edge of the pedestal upper surface towards one end of pedestal 106, the shield ring 202 isType.Pedestal 106
It is connected to the bottom of reaction chamber 100 by elevating mechanism, the elevating mechanism can mobile foundation above and between lower position
106.Above when position, deposition ring 203 can be engaged with shield ring 202, with pedestal 106 up be moved to processing position and can
Lift shield ring 202 from lower covering 221.In lower position, pedestal 106 is placed in lower 221 lower section of covering, lower covering
221 engage again with shield ring 202 so that shield ring 202 overhangs 106 top of pedestal.
Fig. 6 is a kind of structural schematic diagram of covering provided by one embodiment of the present invention, and Fig. 7 is covering shown in Fig. 6
Upper covering structural schematic diagram, Fig. 8 be Fig. 6 shown in covering lower covering structural schematic diagram.As shown in figure 8, institute
The bottom for stating lower covering 221 is U-type groove structure, and the U-lag surrounds the bottom of the upper covering 211, the U-shaped
Slot is provided at least one first stomata 205 close to the lower part of the side of the reaction chamber side wall.Preferably, first stomata
205 be rectangular.Certainly, first stomata may be other any shapes in practical applications, for example, round.Preferably,
Multiple first stomatas 221 are uniformly arranged on the lower covering bottom U-type groove close to the side of the reaction chamber side wall
Lower part.As shown in fig. 7, the upper covering bottom fall side of " Z " the type structure far from the reaction chamber side wall lower part
It is provided at least one second stomata 206.Preferably, second stomata 206 is rectangular.Certainly, in practical applications described
Two stomatas may be other any shapes, for example, round.Preferably, multiple second stomatas 206 are uniformly arranged on described
Upper covering bottom fall side of " Z " the type structure far from the reaction chamber side wall.Covering provided in this embodiment changes
Gas source inlet 105 is closed in the air inlet route of reaction gas, the bottom that the first stomata 205 is provided with lower covering, and reaction gas can
Directly to enter processing region 101 by the second stomata 206 of the least significant end of the bottom of upper covering 211.In addition, compared to passing through
Gap, reaction gas is more easily by stomata.By above-mentioned intake method, what reaction gas can be full and uniform diffuses to reaction
Chamber, so that influencing the expansion that proportional components and raising reaction gas of the reaction gas in reaction chamber enter reaction chamber
Effect and uniformity are dissipated, to obtain the better film of technological effect.
As shown in fig. 6, the first stomata 221 is not weighed with projection of second stomata 211 in the reaction chamber sidewall direction
Close, i.e., upper covering 211 with lower covering 221 is interlaced opens up stomata.Above structure can be to avoid heavy product to Chi locular wall
102.Preferably, upper covering 211 and lower 221 first 205 or more stomata of covering partially overlap.
As shown in figure 5, shield ring 202 further includes inner ring 212 and outer ring 222.Inner ring 212 is with outer ring 222 with alternate each other
Every mode define downward open end, the U-lag of the lower covering 221 is far from the side of the reaction chamber side wall
In the open end, the open end and the end of lower covering 221 are engaged with each other.Make in this wayType shield ring with
Upper covering, lower covering protect the first stomata 221 and the second stomata 206 jointly, prevent from depositing to chamber wall 102.
In one embodiment, TiN is sputtered using the room anti-Ying Chi 100, reaction gas is N2 and Ar, wherein Ar is for splashing
It shoots at the target material.Reaction gas is passed through to reaction chamber 100 in the same time, through detecting, uses technique groups provided in this embodiment
Technique component 1% or so of the uniformity for the film rectangular resistance that part obtains than using prior art offer.
In the technical solution of reaction chamber provided by the invention, gas source is closed in the bottom that the first stomata is provided with lower covering
Import, reaction gas can be directly entered processing region.By above-mentioned intake method, diffusion that reaction gas can be full and uniform
To reaction chamber, so that influencing proportional components and raising reaction gas of the reaction gas in reaction chamber enters reaction chamber
The diffusion effect and uniformity of room, to obtain better film.
The present invention also provides a kind of consersion units, including any of the above-described reaction chamber.Consersion unit provided by the invention
In technical solution, gas source inlet is closed in the bottom that the first stomata is provided with lower covering, and reaction gas can be directly entered processing
Region.By above-mentioned intake method, what reaction gas can be full and uniform diffuses to reaction chamber, so that influencing reaction gas
Proportional components and raising reaction gas in reaction chamber enter the diffusion effect and uniformity of reaction chamber, to obtain
Better film.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (8)
1. a kind of reaction chamber, including the pedestal and technique component for carrying workpiece to be machined, which is characterized in that the technique
Component includes covering, and the covering includes upper covering and lower covering, and the lower covering is looped around the reaction chamber
The inside sidewalls of room, the upper covering are looped around on the inside of the lower covering, and the bottom of the lower covering is U-lag knot
Structure, the U-lag surround the bottom of the upper covering, lower part of the U-lag close to the side of the reaction chamber side wall
It is provided at least one first stomata；
The bottom of the upper covering is " Z " type structure, and the U-lag of the lower covering is far from the reaction chamber side wall
Side is looped around on the inside of " Z " the type structure of the upper covering, and " Z " type structure is fallen far from described anti-in the upper covering bottom
The lower part of the side of chamber sidewall is answered to be provided at least one second stomata.
2. reaction chamber according to claim 1, which is characterized in that first stomata is reacted with the second stomata described
Projection on chamber sidewall direction is not overlapped.
3. any reaction chamber according to claim 1 or in 2, which is characterized in that the technique component further includes masking
Ring, the shield ring are located at the top at the edge of the pedestal upper surface, the shield ring Wei " ╥ towards one end of pedestal " type.
4. reaction chamber according to claim 3, which is characterized in that the shield ring includes inner ring and outer rings；
The inner ring and outer ring define downward open end, and the U-lag of the lower covering is far from the reaction chamber side wall
Side is located in the open end.
5. reaction chamber according to claim 3, which is characterized in that the shield ring is located at described far from one end of pedestal
Upper covering bottom fall side of " Z " the type structure far from the reaction chamber side wall top.
6. any reaction chamber according to claim 1 or in 2, which is characterized in that multiple first stomatas are uniformly set
Set the lower part in the lower covering bottom U-lag close to the side of the reaction chamber side wall.
7. reaction chamber according to claim 1 or 2, which is characterized in that multiple second stomatas are uniformly arranged on institute
State covering bottom side of " Z " the type structure far from the reaction chamber side wall.
8. a kind of consersion unit, including reaction chamber, which is characterized in that the reaction chamber is institute any in claim 1-7
The reaction chamber stated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410269591.2A CN105336640B (en) | 2014-06-17 | 2014-06-17 | A kind of reaction chamber and consersion unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410269591.2A CN105336640B (en) | 2014-06-17 | 2014-06-17 | A kind of reaction chamber and consersion unit |
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| Publication Number | Publication Date |
|---|---|
| CN105336640A CN105336640A (en) | 2016-02-17 |
| CN105336640B true CN105336640B (en) | 2018-12-11 |
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|---|---|---|---|
| CN201410269591.2A Active CN105336640B (en) | 2014-06-17 | 2014-06-17 | A kind of reaction chamber and consersion unit |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109811406B (en) * | 2017-11-20 | 2021-09-17 | 北京北方华创微电子装备有限公司 | Quartz piece, process chamber and semiconductor processing equipment |
| CN110556308B (en) * | 2018-06-01 | 2021-12-17 | 北京北方华创微电子装备有限公司 | Valve protection mechanism, process chamber and semiconductor equipment |
| CN116096940A (en) | 2022-09-07 | 2023-05-09 | 英诺赛科(苏州)半导体有限公司 | Nitrogen-based wafer chemical vapor deposition device and deposition method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103348446A (en) * | 2011-02-09 | 2013-10-09 | 应用材料公司 | ESC grounding kit with uniform adjustment for RF PVD chambers |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7041201B2 (en) * | 2001-11-14 | 2006-05-09 | Applied Materials, Inc. | Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewith |
| DE10392235T5 (en) * | 2002-02-14 | 2005-07-07 | Trikon Technologies Limited, Newport | Apparatus for plasma processing |
| US7981262B2 (en) * | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
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- 2014-06-17 CN CN201410269591.2A patent/CN105336640B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103348446A (en) * | 2011-02-09 | 2013-10-09 | 应用材料公司 | ESC grounding kit with uniform adjustment for RF PVD chambers |
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| CN105336640A (en) | 2016-02-17 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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