CN105239038A - Organic gas phase film forming device provided with pattern nozzle, and film forming method thereof - Google Patents

Abstract

The invention discloses an organic gas-phase film-forming device adopting a pattern nozzle, comprising an evaporation chamber, a spray printing head connected to the evaporation chamber, and a substrate carrier with a certain gap between the spray print head, and the substrate carrier is controlled to face the spray print head Respectively move linearly along the main axis direction of the printing head, the horizontal direction in the plane perpendicular to the main axis of the printing head, and the third direction perpendicular to the horizontal direction in the plane. The printing head includes a base body of the print head, a heating sleeve covering the base body of the print head, a graphic nozzle located at one end of the base body of the jet print head, a mixing chamber communicated with the graphic nozzle, and a gas inlet connecting the evaporation chamber and the mixing chamber. The opening of the graphic nozzle has a certain shape, and the evaporation chamber is used to evaporate the solid organic material to obtain the gas phase organic material, which enters the mixing chamber of the printing head through the gas inlet of the printing head, and then is sprayed out to the substrate on the substrate stage through the graphic nozzle , to prepare a graphic film with the same shape as the opening of the graphic nozzle.

Description

An organic vapor phase film-forming device and film-forming method using graphic nozzles

technical field

The invention belongs to the field of organic vapor deposition film formation, and more specifically relates to an organic vapor phase film formation device using a pattern nozzle and a film formation method thereof.

Background technique

At present, the vacuum vapor deposition film-forming method of organic materials is mainly vacuum thermal evaporation (Vacuum Thermal Evaporation, VTE). A few hundred millimeters away from the evaporation source, the upwardly evaporated organic vapor-phase material passes through a shadow mask with a certain pattern to form a patterned film. This method must pay attention to the size and position accuracy of the shadow mask, otherwise the deposited pattern error is large and uneven. At the same time, because most of the organic materials adhere to the cavity wall, the material utilization rate is only 5%. Particle contamination from organic materials requires regular cleaning of the shadow mask.

Based on VTE technology, Organic Vapor Phase Deposition (OVPD) technology has been developed. The principle schematic diagram of this technology is shown in Figure 2. In Figure 2: after the organic material is heated and evaporated, the gas phase organic molecules are passed through the spray head by using an inert gas. Spray to the substrate, and place a shadow mask with a certain pattern opening between the shower head and the substrate to obtain a patterned film. Since the inert gas is used as the carrier gas, the material utilization rate can reach 50%, which is the traditional vacuum heat treatment method. 10 times that of evaporation technology. However, defining graphic features through a shadow mask requires a higher dimensional accuracy of the shadow mask. For example, when a pattern is required to have a feature of 40 μm, a metal shadow mask with a feature of 10 μm to 15 μm needs to be used. At the same time, the shadow mask The distance between the mold and the substrate is about 10-15 μm. In OVPD technology, the temperature of the carrier gas is about 200-350°C, which causes the shadow mask to be at a higher working temperature for a long time. Under the joint action of the thinner shadow mask, it is easy to deform, which affects the dimensional accuracy and shape, and also affects the gap between the shadow mask and the substrate. In addition, the gas will produce obvious lateral dispersion after passing through the metal baffle plate, which will make the film formation pattern widen and the center position become thicker. Third, the waste of materials is still large, reaching 50%, and organic matter is also easy to deposit on the shadow mask, and particle pollution is easy to occur during film formation, and the shadow mask needs to be cleaned regularly.

When VTE and OVPD techniques are used to prepare patterned organic thin films, a shadow mask is required, and openings for organic material gases to pass through are opened on the shadow mask, and these openings have a predetermined shape. In these two technologies, the organic vapor phase material from the organic material evaporation source is divided into two parts, one part passes through the opening on the shadow mask mask, and is deposited on the substrate to form an organic thin film with a certain shape. The shape of the film is the same as the shape of the opening on the shadow mask, which realizes patterned film formation; the other part does not pass through the opening on the shadow mask, and is directly deposited on the surface of the shadow mask. The organic material of the shadow mask causes particle contamination, which affects the film quality, therefore, the shadow mask needs to be cleaned regularly. At the same time, the organic material deposited on the surface of the shadow mask is just the waste caused by the shadow mask technology. On the shadow mask, the total area of the pattern opening is far smaller than the total surface area of the shadow mask, which leads to The material utilization in vacuum thermal evaporation and organic vapor deposition techniques using shadow masks is very low.

Contents of the invention

In view of the above defects or improvement needs of the prior art, the present invention provides an organic gas-phase film-forming device and a film-forming method using a graphic nozzle. A patterned thin film with the same shape of the opening of the nozzle, thereby solving technical problems such as low material utilization rate and particle pollution caused by the use of a shadow mask.

In order to achieve the above object, according to one aspect of the present invention, there is provided an organic vapor phase film-forming device using a graphic nozzle, which is used to prepare an organic thin film with a certain pattern, which includes an evaporation chamber, located at one end of the evaporation chamber and connected with it. The connected printing head and the substrate carrier with a certain gap between the printing head and the printing head are characterized in that:

The printing head includes a printing head base body, a heating jacket covering the printing head base body, a graphic nozzle located at one end of the printing head base body, and a nozzle connected to the graphic nozzle and located in the middle of the printing head base body. The mixing chamber, which is a hollow cavity, and the gas inlet located at the other end of the printing head base and accommodated in the printing head base, one end communicates with the mixing chamber, and the other end communicates with the evaporation The chamber is communicated so that the gas for the evaporation chamber enters the mixing chamber through the gas inlet;

The graphic nozzle has an opening shape, which is the same as the graphic of the prepared organic film;

The evaporation chamber is used for evaporating solid organic materials to obtain gas-phase organic materials, which enter the mixing chamber through the gas inlet, and then are sprayed out onto the substrate on the substrate stage through the pattern nozzles for use in A film having the same pattern as the opening shape of the pattern nozzle is prepared.

Further, the opening shape of the graphic nozzle is any possible shape of a planar graphic.

Further, the graphic nozzle is detachably connected to the base of the printing head, the number of openings is one or more, all openings are located in the same plane, and the plane where the openings are located is the same as that of the substrate carrier. The planes on which the substrates lie are parallel.

Further, the evaporation chamber includes:

metal sleeve;

a heating jacket covering the metal sleeve for heating up;

a quartz glass cylinder, accommodated in the metal sleeve and located on one side of the metal sleeve, for accommodating solid organic materials;

A gas channel, accommodated in the metal sleeve and located on the other side of the metal sleeve, the gas channel is adjacent to the quartz glass cylinder and communicates with it through a through hole, and the gas channel is connected to the quartz glass cylinder The axes of the glass cylinder are parallel, one end of the gas channel communicates with the quartz glass cylinder, and the other end communicates with the gas inlet of the printing head;

A pneumatic switch is accommodated in the gas channel and is used to control whether the evaporation chamber communicates with the mixing chamber of the printing head.

Further, the gas channel includes a small hole section with a smaller cross-sectional area and a large hole section with a larger cross-sectional area, the small hole section communicates with the quartz glass cylinder through a through hole, and the large hole section communicates with the quartz glass cylinder. The gas inlet of the printing head is connected, the connection between the large hole section and the small hole section has a stepped surface, and the centerlines of the large hole section and the small hole section coincide.

Further, the pneumatic switch includes a piston and a cylindrical helical spring fixedly connected to the piston at one end, both of which are accommodated in the large hole section of the gas passage, and the other end of the cylindrical helical spring is fixed to the gas outlet of the printing head. At the entrance: the piston is in the shape of a flat plate with an area larger than the cross-sectional area of the small hole section, and is acted by the elastic force of the cylindrical coil spring to withstand the step surface at the connection between the large hole section and the small hole section.

Further, the number of the evaporation chamber is one or more.

Further, the temperature inside the quartz glass cylinder of the evaporation chamber is adjustable from room temperature to 500°C.

Further, the substrate carrier is controlled to move linearly relative to the printing head along the main axis direction of the printing head, the horizontal direction in the plane perpendicular to the main axis of the printing head, and the third direction perpendicular to the horizontal direction in the plane.

Further, the substrate carrier includes:

a substrate support plate for supporting a substrate thereon;

a cooling box, the cooling box is located under the substrate support plate and fixed thereto;

The moving mechanism, which is located below the cooling box, is used to support the cooling box and fix it, and is used to realize the movement along the direction of the main axis of the printing head and in the plane perpendicular to the main axis of the printing head according to external instructions. Move linearly in the horizontal direction and the third direction perpendicular to the horizontal direction in the plane.

Further, the cooling box is characterized in that the cooling box communicates with a container for accommodating a cooling medium in the outside through pipes.

Further, the moving mechanism realizes that the distance between the graphic nozzle and the substrate on the substrate stage can be adjusted in the range of 0 to 2000 microns.

Further, it also includes a vacuum box, the vacuum box accommodates the evaporation chamber, the printing head and the substrate carrier.

Further, it also includes:

The carrier gas delivery pipeline is connected with the carrier gas source and the evaporation chamber. There are multiple carrier gas delivery pipelines. One carrier gas delivery pipeline corresponds to one evaporation chamber. The number of the delivery pipelines is the same as the number of the evaporation chambers. same;

a carrier gas heater, the carrier gas heater is installed on the carrier gas delivery pipeline;

A pressure regulating valve, the pressure regulating valve is installed on the carrier gas delivery pipeline, and is located between the carrier gas heater and the carrier gas source;

A solenoid valve, the solenoid valve is installed on the carrier gas delivery pipeline, and is located between the carrier gas heater and the pressure regulating valve.

According to another aspect of the present invention, a method for forming an organic vapor phase film using the above-mentioned device is provided.

Generally speaking, compared with the prior art, the above technical solution conceived by the present invention can achieve the following beneficial effects due to the design of the graphic nozzle and the evaporation chamber:

1. Using graphic nozzles, there is no need to use a shadow mask, organic materials will only adhere to the surface of the substrate, and there is no particle pollution and material waste caused by the aforementioned use of a shadow mask, thus greatly improving material utilization and film formation quality without the problems of cleaning shadow masks.

2. With the design of multiple evaporation chambers, various organic materials can be heated and vaporized at the same time. By controlling the pressure of the carrier gas and the evaporation rate of the organic materials, the volume of organic materials entering the mixing chamber of the printing head can be controlled within the same period of time. Ratio, an organic thin film with composite components is obtained, which greatly improves the efficiency, quality and type of film formation by vacuum vapor deposition.

3. By setting different evaporation chambers to correspond to different carrier gas pipelines, and installing solenoid valves that can control the opening and closing of each carrier gas pipeline, it is possible to flexibly control whether different organic materials enter the evaporation chamber, and to control different organic materials. The time when the material enters the evaporation chamber can finally flexibly control the thickness and type of the film.

Description of drawings

Fig. 1 is the schematic diagram of the principle of existing vacuum thermal evaporation technology;

Fig. 2 is the schematic diagram of the principle of existing organic vapor phase deposition technology;

FIG. 3 is a schematic structural view of an organic vapor-phase film-forming device using a graphic nozzle in this embodiment;

Fig. 4 (a) is the front view of the structure of the vaporization cavity gas channel and the pneumatic switch of the present embodiment;

Fig. 4 (b) is the top view of the structure of the vaporization cavity gas channel and the pneumatic switch of the present embodiment;

Fig. 5 (a) is the schematic diagram of the pattern nozzle structure of the present embodiment;

Fig. 5 (b) is the sectional view of Fig. 5 (a) arrow A-A;

Throughout the drawings, the same reference numerals are used to designate the same elements or structures, wherein:

1-Carrier gas source 2-Relief valve 3-Gas delivery pipeline

4-Pneumatic bifurcation joint 5-Pressure regulating valve 6-Solenoid valve

7-carrier gas heater 8-sealed pipe joint 9-outer base

10-gas pipeline 11-inner base 12-vacuum box

13-sealing cover 14-heating sleeve 15-metal sleeve

16-quartz glass cylinder 17-organic material 18-small hole section of gas channel

19-big hole section of gas channel 20-piston 21-cylindrical coil spring

22-Print head substrate 23-Mixing chamber 24-Graphic nozzle

25-mixed gas phase material 26-substrate 27-substrate support plate

28-cooling box 29-cooling medium 30-moving mechanism

31-servo motor 32-container 33-pump

34-Pipeline 35-Cavity wall of small hole section 36-Cavity wall of large hole section

37-pattern nozzle opening 38-through hole 39-gas inlet

40-straight side wall 41-curved side wall 42-vacuum chamber

43-cooling chamber 44-installation hole.

detailed description

In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

Fig. 3 is a structural schematic diagram of an organic vapor phase film forming device using a graphic nozzle in this embodiment, in Fig. 3:

The inside of the vacuum box 12 is a vacuum chamber 42, and the vacuuming equipment is connected to the vacuum box 12 to communicate with the inside of the vacuum chamber 42. The vacuuming equipment is not shown in the figure, and the vacuuming equipment is used to keep the vacuum chamber 42 at a set vacuum Spend. The wall of the vacuum box 12 is provided with a window and a window door that closes the window. Through the window, the interior of the vacuum chamber 42 can be entered to complete the entry and exit of various mechanical parts into and out of the vacuum box, the loading and unloading of organic materials, and the moving in and out of substrates, etc., as shown in Fig. The window and window doors are not shown in 3.

In this embodiment, the carrier gas source 1 is high-pressure nitrogen, but the type of carrier gas is not limited in the present invention. The carrier gas source 1 and the gas circuit bifurcation joint 4 are connected by gas pipelines, and the carrier gas source 1 and the gas circuit A pressure reducing valve 2 is installed in the gas pipeline between the bifurcated joints 4 to decompress the high-pressure carrier gas from the carrier gas source to make the pressure moderate. The gas path bifurcated joints 4 connect multiple gas delivery pipelines 3. In this implementation, the number of gas delivery pipelines 3 is two, but the number of gas delivery pipelines is not limited in the present invention. Each gas delivery pipe 3 communicates with one evaporation chamber, and the number of gas delivery pipes 3 is the same as the number of evaporation chambers, but the number of evaporation chambers is not limited in the present invention. A carrier gas heater 7 is installed on each gas delivery pipeline, and a solenoid valve 6 is installed at the inlet of the carrier gas heater 7 to control the opening and closing of the gas delivery pipeline. A pressure regulating valve 5 is installed on the gas delivery pipeline 3 between them to further adjust the pressure of the carrier gas in the gas delivery pipeline 3 .

The outer base 9 is fixed on the vacuum box 12 of the film forming device in this embodiment, and the outer base 9 is used to fix the gas delivery pipeline 3 passing through itself, and the outer base 9 and the gas delivery pipeline are sealed and connected with the pipeline sealing joint 8 3. A mounting hole 44 for connecting the inner base 11 and the outer base 9 is provided on the wall of the vacuum box 12 , and the upper part of the inner base 11 passes through the mounting hole 44 and is sealed with the outer base 9 . The sealing cover 13 is located at the opening end of the metal sleeve 15 that seals the evaporation chamber, and is used for sealing the metal sleeve 15. The sealing cover 13 is connected with the inner base 11, and a valve with several openings is installed between the sealing cover 13 and the inner base 11. Heat insulating pad, not shown in Fig. 3, wherein, the opening is used for gas to pass through. The gas pipeline 10 runs through the outer base 9, the inner base 11 and the sealing cover 13 at the same time, one end of which communicates with the gas delivery pipeline 3, and the other end communicates with the gas passage of the evaporation chamber, and is used to deliver the carrier gas from the gas delivery pipeline 3 to the Gas channels in the evaporation chamber.

In this embodiment, the evaporation chamber includes a heating jacket 14, a metal sleeve 15 covered by the heating jacket, a quartz glass cylinder 16 accommodated in the metal sleeve 15, a gas channel, and a pneumatic switch located in the gas channel. The number of evaporation chambers is 2, but the number of evaporation chambers is not limited in the present invention.

In this embodiment, the quartz glass cylinder 16 is used to contain the organic material 17. The bottom and side walls of the quartz glass cylinder 16 are in close contact with the bottom and side walls of the metal sleeve 15 respectively, and the metal sleeve 15 is covered with a heating jacket 14. It is used for heating to vaporize solid organic materials into the gas phase. The metal sleeve 15 and the side wall of the quartz glass cylinder 16 are respectively provided with coaxial through holes at the same position to form a through hole 38. The through hole 38 communicates with the gas channel of the evaporation chamber and supplies the gas phase organic material in the quartz glass cylinder 16. Enter the gas channel of the evaporation chamber through the through hole 38 . The gas channel is located on the side wall of the metal sleeve 15, which is a circular through-hole in cross section, including a small hole section 18 with a smaller diameter and a large hole section 19 with a larger diameter, and the small hole section 18 is located at the large hole section 19 Above, the contact of the two sections forms a step surface, and the large hole section 19 and the small hole section 18 have the same center line.

The pneumatic switch in the gas channel of this embodiment includes a piston 20 and a cylindrical coil spring 21, the pneumatic switch is accommodated in the large hole section 19 of the gas channel, one end of the cylindrical coil spring 21 is fixedly connected to the flat piston 20, and the other end is connected to the nozzle The gas inlet 39 in the print head base.

Figure 4(a) and Figure 4(b) are the structural front view and top view of the pneumatic switch of this embodiment, respectively. Looking down from the top of the small hole section 18 of the gas passage, the area surrounded by the contours of the straight side wall 40 and the curved side wall 41 of the flat piston 20 is larger than the cross-sectional area of the small hole section 18 of the gas passage, and smaller than the large hole section of the gas passage 19, the curved side wall 41 of the flat piston 20 and the cavity wall 35 of the large hole section 19 of the gas channel are clearance fit, so that the piston 20 can move in the gas channel under the external pressure or the force of the cylindrical coil spring. Axial movement in bore segment 19.

The printing head in this embodiment includes a printing head substrate 22 , a heating jacket 14 covering the printing head substrate, a graphic nozzle 24 , a mixing chamber 23 communicating with the graphic nozzle, and a gas inlet 39 communicating with the evaporation chamber. The printing head substrate 22 is connected with the metal sleeve 15 of the evaporation chamber. A thermal insulation pad with several openings is installed between the base body 22 of the printing head and the metal sleeve 15 of the evaporation chamber, not shown in FIG. 3 , and the openings are used for the passage of gas. One end of the gas inlet 39 communicates with the large hole section 19 of the gas passage in the evaporation chamber, and the other end communicates with the mixing chamber 23. The graphic nozzle 24 is located below the mixing chamber 23 and communicates with the mixing chamber 23 through the opening 37 of the graphic nozzle.

Fig. 5(a) is a schematic structural diagram of the graphic nozzle of this embodiment, and Fig. 5(b) is a cross-sectional view of arrow A-A in Fig. 5(a). In the present embodiment, the shape of the opening 37 of the graphic nozzle is circular, and the number is one, but the number and shape of the graphic nozzle opening are not limited in the present invention, and the graphic nozzle opening can be any possible planar shape among the present invention, And the different openings are all located in the same plane.

In this embodiment, the substrate stage includes a substrate support plate 27 , a cooling box 28 and a moving mechanism 30 . Place the substrate 26 on the substrate support plate 27, the cooling box 28 is located below the substrate support plate 27 and is connected to it as a whole, the cooling medium 29 is housed in the cooling box 28, and the substrate support plate 27 is cooled by circulating the cooling medium 29, thereby The substrate 26 is cooled during the film forming process, so as to realize the desublimation and deposition of the organic gas phase material. The moving mechanism 30 is located below the cooling box 28 and is fixed together with the cooling box 28. It is used to support the cooling box 28 and the substrate support plate 27 and to follow the external instructions along the direction of the main axis of the printing head and the horizontal plane in the plane perpendicular to the main axis of the printing head. direction and the third direction perpendicular to the horizontal direction in the plane to move linearly, so as to adjust the positions of the substrate 26 and the printing head on the substrate support plate. In this embodiment, the material of the substrate 26 is glass, but the present invention does not limit the material of the substrate 26 .

In this embodiment, the inside of the cooling box 28 has a cooling cavity 43, and the pump 33 is connected to the cooling box 28 through the pipeline 34 and the pipeline sealing joint 8 to communicate with the inside of the cooling cavity 43, and the cooling medium 29 is pumped by the pump 33 , circulates between the container 32 and the cooling cavity 43, and the volume of the container 32 is much larger than that of the cooling cavity 43, so as to ensure sufficient cooling medium for cooling. The pipeline 34 itself has a certain degree of elasticity. By controlling the length of the pipeline 34 inside the vacuum chamber 42 , the part of the pipeline 34 inside the vacuum chamber 42 is flexible and can move with the movement of the cooling box 28 .

Three sets of lead screws are installed in the moving mechanism 30 of this embodiment, and the three sets of lead screws are respectively connected to the direction of the main axis of the printing head, the horizontal direction in the plane perpendicular to the main axis of the printing head, and the third direction perpendicular to the horizontal direction in the plane. The directions coincide. There are three servo motors 31 in this embodiment, and the three servo motors respectively drive three sets of lead screws to move. The movement of the three sets of lead screws realizes the movement of the moving mechanism, that is, the movement of the entire substrate carrier. The opening and closing of the servo motor is controlled by the driver, the motion control card and the computer program, and the displacement of the motion mechanism 30 in the three directions is detected by the grating ruler, read by the grating reading head, and the read data is converted into a signal Send it to the computer program, and the computer program will judge whether the current position is consistent with the preset position. If it is not the preset position, the movement mechanism will continue to move. If it is the preset position, it will send instructions to the driver through the motion control card. , the driver controls the servo motor in this direction to stop rotating according to the instruction. The rotation of the servo motors in different directions controls the transmission of the lead screws in different directions, and finally translates into the movement of the entire substrate carrier in different directions.

The working process of device in the embodiment of the present invention is:

Place organic materials and vacuumize: Place different organic materials in the quartz glass cylinders of the two evaporation chambers. In this embodiment, there are two evaporation chambers, which are named left evaporation chamber and right evaporation chamber according to their positional relationship, but in the invention The number of evaporation chambers is not limited. Vacuumize the vacuum chamber 42. During the process of obtaining a vacuum in the vacuum chamber 42, all heating jackets and carrier gas heaters do not work, and the solenoid valves 6 corresponding to the two evaporation chambers are in a closed state. The pistons 20 corresponding to the chambers are in contact with the stepped surface of the gas channel of the evaporation chamber under the elastic force of the cylindrical coil spring 21, and completely close the small hole section 18 of the gas channel.

Set various parameters and heat: after the vacuum degree of the vacuum chamber 42 reaches the set value, according to the characteristics of the organic material and the expected content range, respectively set the predetermined temperature of the left evaporation chamber and the right evaporation chamber to control the organic material 17 evaporation rate. Turn on the heating, and before all the temperatures reach the predetermined value, the solenoid valves 6 corresponding to the left and right evaporation chambers are still in the closed state, and the pistons 20 respectively corresponding to the left and right evaporation chambers are driven by the cylindrical coil spring 21 Under the action of the elastic force, it is still in contact with the step surface and closes the small hole section 18 of the gas channel. The pressure regulating valve 5 corresponding to the left evaporation chamber and the right evaporation chamber is used to set the carrier gas corresponding to the left evaporation chamber and the right evaporation chamber respectively. Air pressure to control the gas flow pressure and flow rate, thereby controlling the content of the gas-phase organic material driven by it into the mixing chamber 14 .

Film forming process: After all the temperatures reach the predetermined value, the electromagnetic valves 6 corresponding to the left evaporation chamber and the right evaporation chamber are opened, and the carrier gas with a certain temperature after being heated by the carrier gas heater 7 enters the evaporation chamber and the gas phase organic material Mix to obtain a mixed carrier gas. The mixed carrier gas has a certain pressure, which acts on the surface of the piston 20. When the pressure overcomes the elastic force of the cylindrical coil spring 21, the piston 20 moves downward together with the cylindrical coil spring 21, and the small hole section 18 of the gas channel and the large hole section 19 of the gas channel Communication, the mixed carrier gas passes through the gap between the straight side wall 40 of the piston 20 and the cavity wall 35 of the large hole section 19 of the gas channel, enters the gas inlet 39, and then enters the mixing cavity 23 of the printing head. The organic gas-phase materials respectively originating from the left evaporation chamber and the right evaporation chamber are driven by the carrier gas into the mixing chamber 23 of the printing head and mixed to obtain the mixed gas-phase material 25 . The mixed gas-phase material 25 is ejected from the pattern opening 37 with a certain shape in the pattern nozzle 24, and is sprayed toward the substrate 26, and the organic material components in it are deposited on the surface of the substrate 26 by desublimation to form an organic thin film with a certain pattern and two components. , the pattern of the organic thin film is the same shape as the pattern opening 37.

Film thickness control: The thickness of the organic film is controlled by controlling the opening time of the solenoid valve 6. The longer the opening time of the solenoid valve 6, the thicker the film thickness will be.

In the present invention, the graphic nozzle is used to avoid particle pollution and material waste, and the evaporation chamber, the carrier gas delivery pipeline and the electromagnetic valve installed on the pipeline are designed to effectively control the type of film formation, the composition and thickness of the film.

It is easy for those skilled in the art to understand that the above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention, All should be included within the protection scope of the present invention.

Claims (15)

1. An organic gas-phase film-forming device that adopts a graphic nozzle, used to prepare an organic thin film with a certain pattern, it includes an evaporation chamber, a spray print head positioned at one end of the evaporation chamber and communicated with it, and a certain distance from the spray print head. Clearance for a substrate carrier for carrying a substrate, characterized by: The evaporation chamber is used for evaporating solid organic materials to obtain gas-phase organic materials; The printing head includes a printing head base body, a heating jacket covering the printing head base body, a graphic nozzle located at one end of the printing head base body, and a nozzle connected to the graphic nozzle and located in the middle of the printing head base body. The mixing chamber, which is a hollow cavity, and the gas inlet located at the other end of the printing head base and opened in the printing head base, one end communicates with the mixing chamber, and the other end communicates with the evaporation chamber communicated so that the gas for the evaporation chamber enters the mixing chamber through the gas inlet; The graphic nozzle has an opening, the cross-sectional shape of the opening is the same as the graphic of the prepared organic film, and the gas-phase organic material in the mixing chamber is sprayed onto the substrate located on the substrate carrier through the graphic nozzle, and the graphic can be prepared. A thin film with the same shape as the opening of the graphic nozzle. 2. a kind of organic vapor phase film-forming device that adopts graphic nozzle as claimed in claim 1, is characterized in that, the opening cross-sectional shape of described graphic nozzle can be the same various planar graphic shapes with the shape of the organic thin film to be prepared . 3. A kind of organic vapor phase film-forming device that adopts pattern nozzle as claimed in claim 1 or 2, it is characterized in that, described pattern nozzle is detachably connected on the described printing head substrate, and its number of openings is one or more All the openings are located in the same plane, and the plane where the openings are located is parallel to the plane where the substrate is located. 4. An organic vapor phase film forming device using a graphic nozzle according to any one of claims 1-3, wherein the evaporation chamber includes metal sleeve; a heating mantle covering the metal sleeve for heating; a quartz glass cylinder, which is accommodated in the metal sleeve and located on one side of the metal sleeve, for accommodating solid organic materials; A gas channel, which is opened in the metal sleeve and located on the other side of the metal sleeve, the gas channel is adjacent to the quartz glass cylinder and one end communicates with it through a through hole, and the gas channel is connected to the The axes of the quartz glass cylinder are parallel, and the other end of the gas passage communicates with the gas inlet of the printing head; A pneumatic switch, which is accommodated in the gas channel, is used to control the communication between the quartz glass cylinder and the mixing chamber of the printing head, so as to realize the delivery of gas-phase organic materials to the mixing chamber of the printing head through the gas channel. 5. A kind of organic gas-phase film-forming device that adopts pattern nozzle as claimed in claim 4, is characterized in that, described gas channel comprises the smaller small hole section of cross-sectional area and the larger large hole section of cross-sectional area, The small hole section communicates with the quartz glass cylinder through a through hole, the large hole section communicates with the gas inlet of the printing head, the connection between the large hole section and the small hole section has a stepped surface, and the The centerlines of the large hole segment and the small hole segment coincide. 6. A kind of organic gas-phase film-forming device that adopts pattern nozzle as claimed in claim 4, it is characterized in that, described pneumatic switch comprises piston and the cylindrical helical spring that one end is fixedly connected with piston, and both of them are contained in gas In the large hole section of the channel, the other end of the cylindrical coil spring is fixed at the gas inlet of the printing head; The piston is flat and its area is larger than the cross-sectional area of the small hole section, and can be pressed against the step surface at the junction of the large hole section and the small hole section under the elastic force of the cylindrical coil spring to realize the sealing of the gas passage And the spring can be compressed under the action of external force to make it break away from the step surface to realize the penetration of the gas channel. 7. An organic vapor phase film forming device using a graphic nozzle according to any one of claims 1-6, wherein the number of said evaporation chambers is one or more. 8. An organic vapor phase film forming device using a pattern nozzle according to any one of claims 1-7, wherein the temperature inside the quartz glass cylinder of the evaporation chamber is adjustable from room temperature to 500°C. 9. A kind of organic gas-phase film-forming device that adopts pattern nozzle as claimed in claim 1, it is characterized in that, described substrate carrier is controlled relative to jet printing head respectively along the direction of the main axis of jet printing head, perpendicular to the main axis of jet printing head The horizontal direction in the plane and the third direction perpendicular to the horizontal direction in the plane move linearly. 10. A kind of organic vapor phase film-forming device adopting pattern nozzle as claimed in claim 1 or 9, it is characterized in that, described substrate stage comprises a substrate support plate for supporting a substrate thereon; a cooling box, the cooling box is located under the substrate support plate and fixed thereto; The moving mechanism, which is located below the cooling box, is used to support the cooling box and fix it, and is used to realize the movement along the direction of the main axis of the printing head and in the plane perpendicular to the main axis of the printing head according to external instructions. Move linearly in the horizontal direction and the third direction perpendicular to the horizontal direction in the plane. 11 . The organic vapor-phase film forming device using graphic nozzles according to claim 10 , the cooling box, wherein the cooling box is connected to a container for a cooling medium outside through pipes. 12 . 12. An organic vapor-phase film-forming device using a graphic nozzle according to claim 10 or 11, wherein the moving mechanism realizes that the distance between the graphic nozzle and the substrate on the substrate stage is 0 to 2000 Micron range adjustable. 13. A kind of organic vapor phase film-forming device that adopts graphic nozzle as claimed in claim 1, is characterized in that, also comprises a vacuum box, the vacuum box accommodates the evaporation chamber, the printing head and the substrate carrier. 14. A kind of organic vapor phase film-forming device that adopts graphic nozzle as claimed in claim 1, is characterized in that, also comprises A carrier gas delivery pipeline, which communicates with the carrier gas source and the evaporation chamber, and the number of the delivery pipelines is the same as the number of the evaporation chambers; a carrier gas heater, the carrier gas heater is installed on the carrier gas delivery pipeline; A pressure regulating valve, the pressure regulating valve is installed on the carrier gas delivery pipeline, and is located between the carrier gas heater and the carrier gas source; A solenoid valve, the solenoid valve is installed on the carrier gas delivery pipeline, and is located between the carrier gas heater and the pressure regulating valve. 15. A method for organic vapor phase film formation using the device according to any one of claims 1-14.