[go: up one dir, main page]

CN105036067A - Flip-chip stacked encapsulation structure of MEMS sensor and preparation method thereof - Google Patents

Flip-chip stacked encapsulation structure of MEMS sensor and preparation method thereof Download PDF

Info

Publication number
CN105036067A
CN105036067A CN201510288991.2A CN201510288991A CN105036067A CN 105036067 A CN105036067 A CN 105036067A CN 201510288991 A CN201510288991 A CN 201510288991A CN 105036067 A CN105036067 A CN 105036067A
Authority
CN
China
Prior art keywords
substrate
mems sensor
asic
flip
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510288991.2A
Other languages
Chinese (zh)
Inventor
蔡浩原
方东明
杜利东
马天军
刘昶
方震
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Electronics of CAS
Original Assignee
Institute of Electronics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Electronics of CAS filed Critical Institute of Electronics of CAS
Priority to CN201510288991.2A priority Critical patent/CN105036067A/en
Publication of CN105036067A publication Critical patent/CN105036067A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385Shape, e.g. interlocking features

Landscapes

  • Gyroscopes (AREA)
  • Micromachines (AREA)

Abstract

本发明公开了一种MEMS传感器倒装叠层封装结构及其制备方法,该MEMS传感器倒装叠层封装结构包括:基板,该基板表面具有多个凸块;专用集成电路,倒装焊接于该基板之上,该专用集成电路表面的焊盘与该基板表面的凸块对应扣合,实现该专用集成电路与该基板的电路连接;以及MEMS传感器,粘接于该专用集成电路之上,该MEMS传感器的焊盘通过焊线连接于该基板。本发明提供的MEMS传感器倒装叠层封装结构及其制备方法,采用倒装焊方式将ASIC焊接到PCB基板上,减少了一次焊线工艺步骤,简化了工艺复杂度和材料成本。由于ASIC不需要焊线到PCB基板上,可以进一步缩小芯片的封装体积,有利于最终封装尺寸的微型化。

The invention discloses a MEMS sensor flip-chip stacked packaging structure and a preparation method thereof. The MEMS sensor flip-chip stacked packaging structure includes: a substrate with a plurality of bumps on the surface; an application-specific integrated circuit flip-chip welded on the substrate. On the substrate, the pads on the surface of the ASIC are correspondingly engaged with the bumps on the surface of the substrate to realize the circuit connection between the ASIC and the substrate; and the MEMS sensor is bonded to the ASIC, the The pads of the MEMS sensor are connected to the substrate by bonding wires. The MEMS sensor flip-chip stacked packaging structure and the preparation method thereof provided by the present invention adopt the flip-chip welding method to weld the ASIC to the PCB substrate, which reduces the one-time welding process steps and simplifies the process complexity and material cost. Since the ASIC does not need to be bonded to the PCB substrate, the packaging volume of the chip can be further reduced, which is conducive to the miniaturization of the final packaging size.

Description

MEMS传感器倒装叠层封装结构及其制备方法MEMS sensor flip-chip stacked package structure and preparation method thereof

技术领域technical field

本发明涉及MEMS传感器封装技术领域,尤其是一种MEMS传感器倒装叠层(Flip-ChipStacked)封装结构及其制备方法。The invention relates to the technical field of MEMS sensor packaging, in particular to a MEMS sensor flip-chip stacked (Flip-ChipStacked) packaging structure and a preparation method thereof.

背景技术Background technique

微机电系统(Micro-Electro-MechanicalSystem,MEMS)是指采用光刻、腐蚀、薄膜、LIGA、硅微加工、非硅微加工和精密机械加工等技术制作的高科技电子机械器件,其系统尺寸在几毫米乃至更小,其内部结构一般在微米甚至纳米量级。利用MEMS技术手段加工的传感器具有体积小、功耗低、批量制造成本低等优点。Micro-Electro-Mechanical System (MEMS) refers to high-tech electronic mechanical devices made by technologies such as lithography, corrosion, thin film, LIGA, silicon micromachining, non-silicon micromachining and precision machining. A few millimeters or even smaller, its internal structure is generally on the order of microns or even nanometers. Sensors processed by MEMS technology have the advantages of small size, low power consumption, and low batch manufacturing cost.

近年来,MEMS传感器与专用集成电路(ApplicationSpecificIntegratedCircuit,ASIC)通过各种封装技术封装成为一个芯片成为传感器发展的一个趋势。封装的形式包括并排(SidebySide)、叠层(Stacked)等,其中叠层封装形式由于可以减小封装面积(Footprint),越来越多的被电子设计公司所采用。In recent years, it has become a trend in the development of sensors to package MEMS sensors and ASICs into one chip through various packaging technologies. Packaging forms include side by side (SidebySide), stacked (Stacked), etc., among which the stacked packaging form is more and more adopted by electronic design companies because it can reduce the packaging area (Footprint).

以意法电子(STMicroelectronics)的压力传感器LPS331A为例,如图1所示,其采用的是图1所示的叠层封装结构。图1中,最底层的是PCB基板,ASIC芯片通过粘接的方式固定在PCB基板上,MEMS压力传感器再通过粘接的方式固定在ASIC芯片上。MEMS传感器上的焊盘通过焊线(Wirebond)的方式将信号引到ASIC的焊盘上,然后ASIC上的焊盘再通过焊线引到PCB基板上。Taking the pressure sensor LPS331A of STMicroelectronics as an example, as shown in FIG. 1 , it adopts the stacked package structure shown in FIG. 1 . In Figure 1, the bottom layer is the PCB substrate, the ASIC chip is fixed on the PCB substrate by bonding, and the MEMS pressure sensor is fixed on the ASIC chip by bonding. The bonding pad on the MEMS sensor leads the signal to the bonding pad of the ASIC through the bonding wire (Wirebond), and then the bonding pad on the ASIC leads to the PCB substrate through the bonding wire.

从图1所示的STLPS331A封装结构可知,该叠层封装方式需要进行两次焊线,分别是MEMS传感器到ASIC及ASIC到PCB基板,这种封装方法存在的技术缺陷包括:1)需要两步焊线,增加了工艺步骤和材料成本;2)ASIC到PCB基板的焊线需要占用一定的横向位置,限制了芯片尺寸的进一步缩小。From the STLPS331A package structure shown in Figure 1, it can be seen that this stacked package method requires two wire bonding, namely from the MEMS sensor to the ASIC and from the ASIC to the PCB substrate. The technical defects of this packaging method include: 1) Two steps are required The bonding wire increases the process steps and material cost; 2) The bonding wire from the ASIC to the PCB substrate needs to occupy a certain lateral position, which limits the further reduction of the chip size.

发明内容Contents of the invention

(一)要解决的技术问题(1) Technical problems to be solved

有鉴于此,本发明的主要目的在于提供一种MEMS传感器倒装叠层封装结构及其制备方法,以简化封装工艺,降低封装成本。In view of this, the main purpose of the present invention is to provide a MEMS sensor flip-chip stacked packaging structure and its preparation method, so as to simplify the packaging process and reduce the packaging cost.

(二)技术方案(2) Technical solution

为达到上述目的,本发明提供了一种MEMS传感器倒装叠层封装结构,包括:基板,该基板表面具有多个凸块;专用集成电路,倒装焊接于该基板之上,该专用集成电路表面的焊盘与该基板表面的凸块对应扣合,实现该专用集成电路与该基板的电路连接;以及MEMS传感器,粘接于该专用集成电路之上。In order to achieve the above object, the present invention provides a MEMS sensor flip-chip stack package structure, including: a substrate, the surface of the substrate has a plurality of bumps; an ASIC, flip-chip soldered on the substrate, the ASIC The pads on the surface are correspondingly engaged with the bumps on the surface of the substrate to realize the circuit connection between the ASIC and the substrate; and the MEMS sensor is glued on the ASIC.

上述方案中,该MEMS传感器的焊盘首先通过焊线连接于该基板,然后再通过该基板上的布线连接于该专用集成电路的焊盘。In the above solution, the bonding pad of the MEMS sensor is first connected to the substrate through the bonding wire, and then connected to the bonding pad of the ASIC through the wiring on the substrate.

上述方案中,该基板为印刷电路板。In the above solution, the substrate is a printed circuit board.

上述方案中,该基板表面的凸块通过微加工方式制备而成。In the above solution, the bumps on the surface of the substrate are prepared by micromachining.

上述方案中,该基板表面的凸块采用柱形结构、圆锥形结构或多棱锥形结构。该基板表面的凸块采用柱形结构,其顶面为多边形、圆形或椭圆形;该基板表面的凸块采用多棱锥形结构,是采用正三棱锥结构或正金字塔结构。In the above solution, the bumps on the surface of the substrate adopt a columnar structure, a conical structure or a polygonal pyramid structure. The bump on the surface of the substrate adopts a columnar structure, and its top surface is polygonal, circular or elliptical; the bump on the surface of the substrate adopts a polygonal pyramid structure, which is a regular triangular pyramid structure or a regular pyramid structure.

上述方案中,该MEMS传感器为压力传感器、惯性传感器、气体传感器或光传感器。该惯性传感器为加速度计或陀螺仪。In the above solution, the MEMS sensor is a pressure sensor, an inertial sensor, a gas sensor or an optical sensor. The inertial sensor is an accelerometer or a gyroscope.

为达到上述目的,本发明还提供了一种MEMS传感器倒装叠层封装结构的制备方法,包括:在基板表面制备多个凸块,并在基板表面进行再布线;将专用集成电路倒装焊接于该基板之上,使该专用集成电路表面的焊盘与该基板表面的凸块对应扣合,实现该专用集成电路与该基板的电路连接;以及将MEMS传感器粘接于该专用集成电路之上,并采用焊线将该MEMS传感器的焊盘连接于该基板。In order to achieve the above object, the present invention also provides a method for preparing a MEMS sensor flip-chip stacked packaging structure, comprising: preparing a plurality of bumps on the surface of the substrate, and rewiring on the surface of the substrate; flip-chip welding the ASIC On the substrate, the pads on the surface of the ASIC are engaged with the bumps on the surface of the substrate to realize the circuit connection between the ASIC and the substrate; and bonding the MEMS sensor to the ASIC and connect the pads of the MEMS sensor to the substrate with bonding wires.

上述方案中,该基板表面的凸块通过微加工方式制备而成。In the above solution, the bumps on the surface of the substrate are prepared by micromachining.

(三)有益效果(3) Beneficial effects

从上述技术方案可以看出,本发明具有以下有益效果:As can be seen from the foregoing technical solutions, the present invention has the following beneficial effects:

1)本发明提供的MEMS传感器倒装叠层封装结构及其制备方法,由于采用倒装焊方式将ASIC焊接到PCB基板上,减少了一次焊线工艺步骤,简化了工艺复杂度和材料成本。1) The MEMS sensor flip-chip stacked packaging structure and preparation method thereof provided by the present invention, because the ASIC is welded to the PCB substrate by flip-chip welding, the primary bonding process steps are reduced, and the process complexity and material cost are simplified.

2)本发明提供的MEMS传感器倒装叠层封装结构及其制备方法,由于ASIC不需要焊线到PCB基板上,可以进一步缩小芯片的封装体积,有利于最终封装尺寸的微型化。2) The MEMS sensor flip-chip stacked package structure and preparation method thereof provided by the present invention can further reduce the packaging volume of the chip because the ASIC does not need to be bonded to the PCB substrate, which is conducive to the miniaturization of the final package size.

附图说明Description of drawings

图1是现有技术中STLPS331A封装结构的示意图。FIG. 1 is a schematic diagram of the STLPS331A package structure in the prior art.

图2是本发明提供的MEMS传感器倒装叠层封装结构的示意图。Fig. 2 is a schematic diagram of the MEMS sensor flip-chip stack package structure provided by the present invention.

图3是依照本发明实施例的MEMS传感器到PCB基板的引线图。FIG. 3 is a wiring diagram of a MEMS sensor to a PCB substrate according to an embodiment of the present invention.

图4是依照本发明实施例的PCB基板到ASIC的再布线线图。FIG. 4 is a redistribution diagram from a PCB substrate to an ASIC according to an embodiment of the present invention.

图5是本发明提供的制备MEMS传感器倒装叠层封装结构的方法流程图。Fig. 5 is a flowchart of a method for preparing a MEMS sensor flip-chip stack package structure provided by the present invention.

图6是另一实施例中压力传感器倒装叠层封装结构的示意图。Fig. 6 is a schematic diagram of a flip-chip package structure of a pressure sensor in another embodiment.

具体实施方式Detailed ways

为使本发明的目的、技术方案和优点更加清楚明白,以下结合具体实施例,并参照附图,对本发明进一步详细说明。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

本发明提供的MEMS传感器倒装叠层封装结构及其制备方法,采用倒装焊方式将ASIC焊接到PCB基板上,减少了一次焊线工艺步骤,简化了工艺复杂度和材料成本。由于ASIC不需要焊线到PCB基板上,可以进一步缩小芯片的封装体积,有利于最终封装尺寸的微型化。The MEMS sensor flip-chip stacked packaging structure and the preparation method thereof provided by the present invention adopt the flip-chip welding method to weld the ASIC to the PCB substrate, which reduces the one-time welding process steps and simplifies the process complexity and material cost. Since the ASIC does not need to be bonded to the PCB substrate, the packaging volume of the chip can be further reduced, which is conducive to the miniaturization of the final packaging size.

如图2所示,图2是本发明提供的MEMS传感器倒装叠层封装结构的示意图,该MEMS传感器倒装叠层封装结构包括基板、专用集成电路和MEMS传感器。其中,该基板表面具有多个凸块(Bumper);该专用集成电路倒装焊接于该基板之上,该专用集成电路表面的焊盘与该基板表面的凸块对应扣合,实现该专用集成电路与该基板的电路连接。该MEMS传感器粘接于该专用集成电路之上,该MEMS传感器的焊盘通过焊线连接于该基板。As shown in FIG. 2 , FIG. 2 is a schematic diagram of a MEMS sensor flip-chip stack package structure provided by the present invention. The MEMS sensor flip-chip stack package structure includes a substrate, an ASIC and a MEMS sensor. Wherein, the surface of the substrate has a plurality of bumps (Bumper); the ASIC is flip-chip welded on the substrate, and the pads on the surface of the ASIC are correspondingly engaged with the bumps on the surface of the substrate to realize the ASIC A circuit is connected to the circuit of the substrate. The MEMS sensor is glued on the ASIC, and the welding pad of the MEMS sensor is connected to the substrate through welding wires.

图2中,该MEMS传感器的焊盘首先通过焊线连接于该基板,然后再通过该基板上的布线连接于该专用集成电路的焊盘。该基板一般采用印刷电路板,即PCB基板。该基板表面的凸块是通过光刻胶涂布、曝光、显影,或电镀等微加工工艺制备而成。该基板表面的凸块可以采用柱形结构、圆锥形结构或多棱锥形结构等多种形式,当该基板表面的凸块采用柱形结构时,其顶面为多边形(例如三边形、四边形、五边形、六边形等)、圆形或椭圆形;当该基板表面的凸块采用多棱锥形结构时,可以采用正三棱锥结构或正金字塔结构。另外,该MEMS传感器可以为压力传感器、惯性传感器、气体传感器或光传感器等,该惯性传感器例如是加速度计或陀螺仪等。In FIG. 2 , the bonding pad of the MEMS sensor is first connected to the substrate through the bonding wire, and then connected to the bonding pad of the ASIC through the wiring on the substrate. The substrate generally adopts a printed circuit board, that is, a PCB substrate. The bumps on the surface of the substrate are prepared by micro-processing techniques such as photoresist coating, exposure, development, or electroplating. The bump on the surface of the substrate can adopt various forms such as columnar structure, conical structure or polygonal pyramid structure. , pentagon, hexagon, etc.), circular or elliptical; when the bump on the surface of the substrate adopts a polygonal pyramid structure, it can adopt a regular triangular pyramid structure or a regular pyramid structure. In addition, the MEMS sensor may be a pressure sensor, an inertial sensor, a gas sensor, or a light sensor, and the inertial sensor is, for example, an accelerometer or a gyroscope.

再参照图2,该MEMS传感器倒装叠层封装结构的最底层是PCB基板,在PCB基板上通过微加工方式制备凸块(Bumper),ASIC通过倒装焊的方式,倒扣在PCB基板上方。ASIC表面的焊盘与PCB基板上的凸块正好一一对应,从而实现ASIC的焊盘到PCB基板的电路连接。在ASIC芯片上方,叠放MEMS传感器,通过粘接的方式,把MEMS传感器固定在ASIC芯片的上方。MEMS传感器的焊盘通过焊线的方式,直接焊接到PCB基板上,然后再通过PCB基板上的布线,连接到ASIC的相应的焊盘。Referring to Figure 2 again, the bottom layer of the MEMS sensor flip-chip stacked packaging structure is the PCB substrate, on which the bumper (Bumper) is prepared by micromachining, and the ASIC is inverted on the PCB substrate by flip-chip welding . The pads on the surface of the ASIC correspond exactly to the bumps on the PCB substrate, so as to realize the circuit connection between the pads of the ASIC and the PCB substrate. Above the ASIC chip, stack the MEMS sensor, and fix the MEMS sensor on the top of the ASIC chip by bonding. The pads of the MEMS sensor are directly soldered to the PCB substrate by means of bonding wires, and then connected to the corresponding pads of the ASIC through the wiring on the PCB substrate.

图3是依照本发明实施例的MEMS传感器到PCB基板的引线图。压力传感器的激励信号Vext、地GND、以及差分信号输出VINP、VINN分别通过焊线的方式连接到PCB基板上。FIG. 3 is a wiring diagram of a MEMS sensor to a PCB substrate according to an embodiment of the present invention. The excitation signal Vext of the pressure sensor, the ground GND, and the differential signal output VINP, VINN are respectively connected to the PCB substrate by means of bonding wires.

图4是依照本发明实施例的PCB基板到ASIC的再布线线图。四个焊盘通过PCB再布线(RedistributionDesignLine,RDL)的方式分别连接到ASIC的相应的焊盘上。FIG. 4 is a redistribution diagram from a PCB substrate to an ASIC according to an embodiment of the present invention. The four pads are respectively connected to the corresponding pads of the ASIC through PCB redistribution (Redistribution Design Line, RDL).

显然,本发明提供的MEMS传感器倒装叠层封装结构除了应用于压力传感器外,还可以应用到其他MEMS传感器的封装上,例如惯性传感器(加速度计、陀螺仪)、气体传感器或光传感器等。Obviously, the MEMS sensor flip-chip package structure provided by the present invention can also be applied to the packaging of other MEMS sensors, such as inertial sensors (accelerometers, gyroscopes), gas sensors or light sensors, in addition to pressure sensors.

基于图2至图4所示的MEMS传感器倒装叠层封装结构,本发明还提供了制备该MEMS传感器倒装叠层封装结构的方法流程图,如图5所示,该方法包括以下步骤:Based on the MEMS sensor flip-chip stacked packaging structure shown in Figures 2 to 4, the present invention also provides a flow chart of a method for preparing the MEMS sensor flip-chip stacked packaging structure, as shown in Figure 5, the method includes the following steps:

步骤1:在基板表面制备多个凸块,并在基板表面进行再布线;其中,该基板表面的凸块通过微加工方式制备而成;Step 1: preparing a plurality of bumps on the surface of the substrate, and rewiring on the surface of the substrate; wherein, the bumps on the surface of the substrate are prepared by micromachining;

步骤2:将专用集成电路倒装焊接于该基板之上,使该专用集成电路表面的焊盘与该基板表面的凸块对应扣合,实现该专用集成电路与该基板的电路连接;Step 2: Flip-chip-weld the ASIC on the substrate, make the pads on the surface of the ASIC correspond to the bumps on the surface of the substrate, and realize the circuit connection between the ASIC and the substrate;

步骤3:将MEMS传感器粘接于该专用集成电路之上,并采用焊线将该MEMS传感器的焊盘连接于该基板。Step 3: bonding the MEMS sensor on the ASIC, and connecting the bonding pad of the MEMS sensor to the substrate with a bonding wire.

上述实施例中,对本发明提供的MEMS传感器倒装叠层封装结构及其制备方法进行了说明,在实际应用中,对于压力传感器而言,为了最大程度上减小应力和温度变化对传感器的影响,可以在ASIC表面利用微加工方法制备4个锚点,用于像桌腿一样支撑起MEMS传感器,尽量避免由于温度或外力对传感器的造成影响。然后在MEMS传感器的四周点上富有弹性的果冻胶(DowCorningSilicon184,1:10)进行固定,如图6所示。该富有弹性的果冻胶可以采用道康宁的一种型号为184的硅胶(DowCorningSilicon184),其中AB组分按照质量比1:10的比例配比。In the above-mentioned embodiments, the MEMS sensor flip-chip stacked packaging structure provided by the present invention and its preparation method are described. In practical applications, for pressure sensors, in order to minimize the influence of stress and temperature changes on the sensor , Four anchor points can be prepared on the surface of the ASIC by micromachining, which are used to support the MEMS sensor like a table leg, and try to avoid the influence of temperature or external force on the sensor. Then fix it with elastic jelly glue (DowCorningSilicon184, 1:10) around the MEMS sensor, as shown in Figure 6. The elastic jelly can be a Dow Corning 184 silica gel (DowCorningSilicon184), wherein the AB components are proportioned according to the mass ratio of 1:10.

以上所述的具体实施例,对本发明的目的、技术方案和有益效果进行了进一步详细说明,所应理解的是,以上所述仅为本发明的具体实施例而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The specific embodiments described above have further described the purpose, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above descriptions are only specific embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.

Claims (10)

1.一种MEMS传感器倒装叠层封装结构,包括:1. A MEMS sensor flip-chip stacked packaging structure, comprising: 基板,该基板表面具有多个凸块;a substrate, the surface of the substrate has a plurality of bumps; 专用集成电路,倒装焊接于该基板之上,该专用集成电路表面的焊盘与该基板表面的凸块对应扣合,实现该专用集成电路与该基板的电路连接;以及An ASIC, which is flip-chip soldered on the substrate, and the pads on the surface of the ASIC correspond to the bumps on the surface of the substrate, so as to realize the circuit connection between the ASIC and the substrate; and MEMS传感器,粘接于该专用集成电路之上。The MEMS sensor is glued on the ASIC. 2.根据权利要求1所述的MEMS传感器倒装叠层封装结构,其中,该MEMS传感器的焊盘首先通过焊线连接于该基板,然后再通过该基板上的布线连接于该专用集成电路的焊盘。2. MEMS sensor flip-chip stack package structure according to claim 1, wherein, the welding pad of this MEMS sensor is first connected to this substrate by bonding wire, then is connected to the ASIC by wiring on this substrate pad. 3.根据权利要求1所述的MEMS传感器倒装叠层封装结构,其中,该基板为印刷电路板。3. The MEMS sensor flip chip package structure according to claim 1, wherein the substrate is a printed circuit board. 4.根据权利要求1所述的MEMS传感器倒装叠层封装结构,其中,该基板表面的凸块通过微加工方式制备而成。4. The MEMS sensor flip chip package structure according to claim 1, wherein the bumps on the surface of the substrate are prepared by micromachining. 5.根据权利要求1所述的MEMS传感器倒装叠层封装结构,其中,该基板表面的凸块采用柱形结构、圆锥形结构或多棱锥形结构。5 . The MEMS sensor flip-chip stack package structure according to claim 1 , wherein the bumps on the surface of the substrate adopt a columnar structure, a conical structure or a polygonal pyramid structure. 6.根据权利要求5所述的MEMS传感器倒装叠层封装结构,其中,6. MEMS sensor flip-chip stack package structure according to claim 5, wherein, 该基板表面的凸块采用柱形结构,其顶面为多边形、圆形或椭圆形;The bump on the surface of the substrate adopts a columnar structure, and its top surface is polygonal, circular or elliptical; 该基板表面的凸块采用多棱锥形结构,是采用正三棱锥结构或正金字塔结构。The protrusions on the surface of the substrate adopt a polygonal pyramid structure, which is a regular triangular pyramid structure or a regular pyramid structure. 7.根据权利要求1所述的MEMS传感器倒装叠层封装结构,其中,该MEMS传感器为压力传感器、惯性传感器、气体传感器或光传感器。7. The MEMS sensor flip chip package structure according to claim 1, wherein the MEMS sensor is a pressure sensor, an inertial sensor, a gas sensor or a light sensor. 8.根据权利要求7所述的MEMS传感器倒装叠层封装结构,其中,该惯性传感器为加速度计或陀螺仪。8. The MEMS sensor flip chip package structure according to claim 7, wherein the inertial sensor is an accelerometer or a gyroscope. 9.一种MEMS传感器倒装叠层封装结构的制备方法,包括:9. A method for preparing a MEMS sensor flip-chip stacked packaging structure, comprising: 在基板表面制备多个凸块,并在基板表面进行再布线;Prepare multiple bumps on the surface of the substrate, and perform rewiring on the surface of the substrate; 将专用集成电路倒装焊接于该基板之上,使该专用集成电路表面的焊盘与该基板表面的凸块对应扣合,实现该专用集成电路与该基板的电路连接;以及Flip-chip welding the ASIC on the substrate, so that the pads on the surface of the ASIC correspond to the bumps on the surface of the substrate, so as to realize the circuit connection between the ASIC and the substrate; and 将MEMS传感器粘接于该专用集成电路之上,并采用焊线将该MEMS传感器的焊盘连接于该基板。The MEMS sensor is bonded on the ASIC, and the welding pad of the MEMS sensor is connected to the substrate by bonding wires. 10.根据权利要求9所述的MEMS传感器倒装叠层封装结构的制备方法,其中,该基板表面的凸块通过微加工方式制备而成。10 . The method for manufacturing a MEMS sensor flip-chip stack package structure according to claim 9 , wherein the bumps on the surface of the substrate are prepared by micromachining. 11 .
CN201510288991.2A 2015-05-29 2015-05-29 Flip-chip stacked encapsulation structure of MEMS sensor and preparation method thereof Pending CN105036067A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510288991.2A CN105036067A (en) 2015-05-29 2015-05-29 Flip-chip stacked encapsulation structure of MEMS sensor and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510288991.2A CN105036067A (en) 2015-05-29 2015-05-29 Flip-chip stacked encapsulation structure of MEMS sensor and preparation method thereof

Publications (1)

Publication Number Publication Date
CN105036067A true CN105036067A (en) 2015-11-11

Family

ID=54443121

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510288991.2A Pending CN105036067A (en) 2015-05-29 2015-05-29 Flip-chip stacked encapsulation structure of MEMS sensor and preparation method thereof

Country Status (1)

Country Link
CN (1) CN105036067A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116193972A (en) * 2023-04-27 2023-05-30 宁波中车时代传感技术有限公司 Sensor preparation method and structure

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI302735B (en) * 2003-01-30 2008-11-01 Endicott Interconnect Tech Inc Stacked chip electronic package having laminate carrier and method of making same
CN101878527A (en) * 2007-11-30 2010-11-03 斯盖沃克斯瑟路申斯公司 Wafer-level packaging using flip-chip mounting
CN202297105U (en) * 2011-10-31 2012-07-04 嘉盛半导体(苏州)有限公司 QFN (Quad Flat Non-leaded Package) structure of MEMS (Micro Electro Mechanical Systems) device
US20130001709A1 (en) * 2011-06-29 2013-01-03 Honeywell International Inc. Systems and methods for vertically stacking a sensor on an integrated circuit chip
CN103193198A (en) * 2013-04-22 2013-07-10 安徽北方芯动联科微系统技术有限公司 Method for reducing packaging stress of micro-electromechanical system (MEMS) chip through back graphics
CN103221332A (en) * 2010-09-18 2013-07-24 快捷半导体公司 Packaging to reduce stress on microelectromechanical systems
CN103288044A (en) * 2011-02-25 2013-09-11 美新半导体(无锡)有限公司 Method for mounting a three-axis MEMS device onto substrate with precise orientation
CN104241220A (en) * 2014-09-16 2014-12-24 武汉大学 Plastic-free package with ultrasmall size
US20150114111A1 (en) * 2013-10-29 2015-04-30 Samsung Electro-Mechanics Co., Ltd. Mems sensor and device having the same

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI302735B (en) * 2003-01-30 2008-11-01 Endicott Interconnect Tech Inc Stacked chip electronic package having laminate carrier and method of making same
CN101878527A (en) * 2007-11-30 2010-11-03 斯盖沃克斯瑟路申斯公司 Wafer-level packaging using flip-chip mounting
CN103221332A (en) * 2010-09-18 2013-07-24 快捷半导体公司 Packaging to reduce stress on microelectromechanical systems
CN103288044A (en) * 2011-02-25 2013-09-11 美新半导体(无锡)有限公司 Method for mounting a three-axis MEMS device onto substrate with precise orientation
US20130001709A1 (en) * 2011-06-29 2013-01-03 Honeywell International Inc. Systems and methods for vertically stacking a sensor on an integrated circuit chip
CN202297105U (en) * 2011-10-31 2012-07-04 嘉盛半导体(苏州)有限公司 QFN (Quad Flat Non-leaded Package) structure of MEMS (Micro Electro Mechanical Systems) device
CN103193198A (en) * 2013-04-22 2013-07-10 安徽北方芯动联科微系统技术有限公司 Method for reducing packaging stress of micro-electromechanical system (MEMS) chip through back graphics
US20150114111A1 (en) * 2013-10-29 2015-04-30 Samsung Electro-Mechanics Co., Ltd. Mems sensor and device having the same
CN104241220A (en) * 2014-09-16 2014-12-24 武汉大学 Plastic-free package with ultrasmall size

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116193972A (en) * 2023-04-27 2023-05-30 宁波中车时代传感技术有限公司 Sensor preparation method and structure

Similar Documents

Publication Publication Date Title
US9586813B2 (en) Multi-die MEMS package
CN103663362B (en) Sensor packaging method and sensor encapsulation
CN102874745B (en) Manufacturing method of packaging structure with microelectromechanical components
CN101525116B (en) Structure of vertical three-dimensional combined packaging of micro electric mechanical system and manufacture method thereof
CN205472637U (en) Micro -electro -mechanical system package substrate
US10329141B2 (en) Encapsulated device of semiconductor material with reduced sensitivity to thermo-mechanical stresses
US10435290B2 (en) Wafer level package for a MEMS sensor device and corresponding manufacturing process
CN103253627B (en) semiconductor integrated device assembly technology
EP2840375A1 (en) Device with a micro- or nanoscale structure
CN205177811U (en) Semiconductor device packaging
TWI431732B (en) Semiconductor package and its manufacturing method
CN105600738B (en) A kind of closed structure and its manufacture method for wafer-level packaging
CN109799026B (en) MEMS pressure sensor and preparation method
TW201212174A (en) MEMS sensor package
CN105036067A (en) Flip-chip stacked encapsulation structure of MEMS sensor and preparation method thereof
US20160060100A1 (en) Mems sensor integrated with a flip chip
CN105047615A (en) Packaging structure and packaging method of micro-electromechanical system (MEMS) sensor
CN204434268U (en) A kind of encapsulating structure of MEMS inertial sensor
Waber et al. Flip-chip packaging of piezoresistive barometric pressure sensors
CN104909330A (en) Micro-electromechanical module and manufacturing method thereof
CN110446148A (en) A kind of MEMS microphone package and its welding manner
CN110572763A (en) A small size MEMS microphone with side wall welding
US10723615B2 (en) Sensor assembly and arrangement and method for manufacturing a sensor assembly
JP2010062448A (en) Sensor module, and method for manufacturing the same
CN109110727B (en) A kind of packaging method of high overload micromachine inertial sensor

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20151111