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CN105016759A - Rapid preparation method for C/SiC composite material - Google Patents

Rapid preparation method for C/SiC composite material Download PDF

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CN105016759A
CN105016759A CN201510377418.9A CN201510377418A CN105016759A CN 105016759 A CN105016759 A CN 105016759A CN 201510377418 A CN201510377418 A CN 201510377418A CN 105016759 A CN105016759 A CN 105016759A
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composite material
thin
matrix material
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刘永胜
门静
张青
王晶
田卓
成来飞
张立同
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Northwestern Polytechnical University
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Abstract

本发明涉及一种快速制备C/SiC复合材料的方法,其特征在于步骤为:1、采用化学气相沉积工艺在薄层碳纤维预制体表面沉积热解碳(PyC)界面;2、沉积PyC界面的薄层碳纤维预制体浸渍聚碳硅烷混合溶液,而后在保护气氛下依次交联固化、裂解,获得薄层C/SiC复合材料;3、重复上一步骤2~3次;4、将多片单层复合材料叠层放入石墨模具内进行放电等离子烧结,最终快速制备得到致密的C/SiC复合材料。本发明充分利用PIP法浸渍薄层时间短以及SPS法烧结迅速的特点,从而实现C/SiC复合材料制备,适用于小型致密构件的致密,比传统CVI法和PIP法可以节省时间95%,并显著提高复合材料致密度,降低复合材料制造成本。

The invention relates to a method for rapidly preparing C/SiC composite materials, which is characterized in that the steps are: 1, adopting a chemical vapor deposition process to deposit a pyrolytic carbon (PyC) interface on the surface of a thin-layer carbon fiber preform; 2, depositing a PyC interface The thin-layer carbon fiber prefabricated body is impregnated with polycarbosilane mixed solution, and then cross-linked, solidified, and cracked sequentially under a protective atmosphere to obtain a thin-layer C/SiC composite material; 3. Repeat the previous step 2 to 3 times; 4. Multi-chip single The layered composite material is stacked into a graphite mold for spark plasma sintering, and finally a dense C/SiC composite material is quickly prepared. The invention makes full use of the characteristics of the PIP method for impregnating the thin layer in a short time and the SPS method for rapid sintering, thereby realizing the preparation of C/SiC composite materials, which is suitable for the compaction of small and dense components, and can save 95% of the time compared with the traditional CVI method and PIP method. Significantly improve the density of the composite material and reduce the manufacturing cost of the composite material.

Description

一种C/SiC复合材料的快速制备方法A Rapid Preparation Method of C/SiC Composite Material

技术领域technical field

本发明涉及材料领域关于C/SiC复合材料的制备,特别是一种快速制备C/SiC复合材料的工艺方法。The invention relates to the preparation of C/SiC composite materials in the field of materials, in particular to a process method for rapidly preparing C/SiC composite materials.

背景技术Background technique

C/SiC复合材料是随航空航天技术的发展而崛起的一种新型超高温结构材料,具有低密度,高强度,高韧性,耐高温,耐化学腐蚀,耐烧蚀,抗冲刷,高硬度和高耐磨性等特点。目前制备C/SiC复合材料的方法有很多,化学气相渗透法(Chemical vaporinfiltration,CVI)是已经得到使用并商品化的方法。在专利号102690124A中公开了一种C/SiC陶瓷基复合材料及其制备方法,该方法采用CVI依次在碳纤维预制体表面沉积热解碳界面层和碳化硅基体得到C/SiC复合材料。但是,CVI法制备C/SiC复合材料具有制备周期长,成本高,工艺复杂的缺点,文献1“肖鹏,徐永东,黄伯云,CVI法快速制备C/SiC复合材料,硅酸盐学报,2002,30[2]:240-243”。若可简化生产工艺,并缩短C/SiC复合材料的制备周期,将有利于进一步促进C/SiC复合材料的发展应用。C/SiC composite material is a new type of ultra-high temperature structural material that has emerged with the development of aerospace technology. It has low density, high strength, high toughness, high temperature resistance, chemical corrosion resistance, ablation resistance, erosion resistance, high hardness and High wear resistance and other characteristics. At present, there are many methods for preparing C/SiC composite materials, and chemical vapor infiltration (Chemical vapor infiltration, CVI) is a method that has been used and commercialized. Patent No. 102690124A discloses a C/SiC ceramic matrix composite material and its preparation method. The method uses CVI to sequentially deposit a pyrolytic carbon interface layer and a silicon carbide matrix on the surface of a carbon fiber preform to obtain a C/SiC composite material. However, the preparation of C/SiC composites by the CVI method has the disadvantages of long preparation period, high cost and complicated process. Document 1 "Xiao Peng, Xu Yongdong, Huang Boyun, Rapid preparation of C/SiC composite materials by CVI method, Journal of Silicates, 2002, 30[2]:240-243". If the production process can be simplified and the preparation cycle of C/SiC composite materials can be shortened, it will be beneficial to further promote the development and application of C/SiC composite materials.

在专利号102795871A中公开了一种快速制备C/SiC陶瓷基复合材料的方法。该方法以低分子液态聚碳硅烷为先驱体,碳纤维预制件为骨架,采用脉冲式加热的化学液气相沉积制备C/SiC复合材料。A method for rapidly preparing C/SiC ceramic matrix composites is disclosed in Patent No. 102795871A. The method uses low-molecular liquid polycarbosilane as a precursor, carbon fiber prefabricated parts as a skeleton, and pulse-heated chemical liquid-vapor deposition to prepare C/SiC composite materials.

在专利号103342570A中公开了一种低成本熔硅浸渗法制备C/SiC复合材料的方法。该方法将碳毡浸渍碳/碳化硅浆料并进行熔融渗硅处理,而后浸渍液体酚醛树脂并碳化,最后进行二次熔融渗硅处理得到C/SiC。该方法工艺较繁琐,高温熔体Si会腐蚀碳纤维,且残余Si会削弱复合材料的高温抗蠕变性能。Patent No. 103342570A discloses a low-cost molten silicon impregnation method for preparing C/SiC composite materials. In the method, carbon felt is impregnated with carbon/silicon carbide slurry and subjected to fusion siliconizing treatment, then impregnated with liquid phenolic resin and carbonized, and finally undergoes secondary fusion siliconization treatment to obtain C/SiC. The process of this method is cumbersome, and the high-temperature molten Si will corrode the carbon fiber, and the residual Si will weaken the high-temperature creep resistance of the composite material.

在专利号101224988中公开了一种C/SIC陶瓷基复合材料的低温制备方法。该方法采用先驱体浸渍裂解工艺(Precursor Infiltration and Pyrolysis,PIP),通过碳纤维预处理、真空浸渍、高温裂解、致密化等工艺步骤,在低温条件下制备得到C/SIC陶瓷基复合材料。该方法重复周期较长,制备的基体会存在大量的收缩裂纹和孔洞,且反复高温裂解会损伤纤维。Patent No. 101224988 discloses a low-temperature preparation method of a C/SIC ceramic matrix composite. The method adopts the process of precursor impregnation and pyrolysis (Precursor Infiltration and Pyrolysis, PIP), and through the process steps of carbon fiber pretreatment, vacuum impregnation, high temperature pyrolysis, and densification, the C/SIC ceramic matrix composite material is prepared under low temperature conditions. This method has a long repetition period, and the prepared matrix will have a large number of shrinkage cracks and holes, and repeated high-temperature cracking will damage the fibers.

文献3“Si'an Chen,Haifeng Hu,Yudi Zhang,Xinbo He,Min Mei.Rapid densificationof C/SiC composites by joint processes of CLVD and PIP.Materials Letters.2011,65[19-20]:3137-3139.”中利用化学液气相沉积结合先驱体浸渍裂解的制备方法。Document 3 "Si'an Chen, Haifeng Hu, Yudi Zhang, Xinbo He, Min Mei. Rapid densification of C/SiC composites by joint processes of CLVD and PIP. Materials Letters. 2011,65[19-20]:3137-3139. "In the preparation method using chemical liquid vapor deposition combined with precursor immersion cracking.

放电等离子烧结(Spark Plasma Sintering,SPS)是制备功能材料的一种全新技术,它具有升温速度快、烧结时间短、组织结构可控、节能环保等鲜明特点,可用来制备金属材料、陶瓷材料、复合材料等,文献2“张久兴,刘科高,周美玲,放电等离子烧结技术的发展和应用,粉末冶金技术,2002,20[3]:129-134”。Spark plasma sintering (Spark Plasma Sintering, SPS) is a new technology for preparing functional materials. It has the characteristics of fast heating speed, short sintering time, controllable structure, energy saving and environmental protection, etc. It can be used to prepare metal materials, ceramic materials, Composite materials, etc., Document 2 "Zhang Jiuxing, Liu Kegao, Zhou Meiling, Development and Application of Spark Plasma Sintering Technology, Powder Metallurgy Technology, 2002, 20[3]: 129-134".

文献4“Alba Centeno,Victoria G.Rocha,Amparo Borrell,Clara Blanco,AdolfoFerna′ndez.Fabrication of C/SiC composites by combining liquid infiltration process andspark plasma sintering technique.Ceramics International.2012,38[3]:2171-2175.”中利用树脂基2D碳纤维预制体,经过一系列液相渗透工艺浸渍中间相沥青、SiC纳米线颗粒、硅粉而后SPS得到C/SiC,工艺过程非常复杂。Document 4 "Alba Centeno, Victoria G. Rocha, Amparo Borrell, Clara Blanco, Adolfo Ferna'ndez. Fabrication of C/SiC composites by combining liquid infiltration process and spark plasma sintering technique. Ceramics International. 2012,38[3]:2171-2175 In ", the resin-based 2D carbon fiber prefabricated body is used, and the mesophase pitch, SiC nanowire particles, and silicon powder are impregnated through a series of liquid phase infiltration processes, and then SPS is used to obtain C/SiC. The process is very complicated.

发明内容Contents of the invention

要解决的技术问题technical problem to be solved

为了解决现有技术中存在的制备周期长,成本高,工艺复杂等问题,进一步促进C/SiC复合材料的发展应用,本发明提出了一种利用PIP结合SPS快速制备C/SiC复合材料的方法。In order to solve the problems of long preparation period, high cost and complicated process in the prior art, and further promote the development and application of C/SiC composite materials, the present invention proposes a method for rapidly preparing C/SiC composite materials by using PIP combined with SPS .

技术方案Technical solutions

一种C/SiC复合材料的快速制备方法,其特征在于步骤如下:A kind of rapid preparation method of C/SiC composite material, it is characterized in that the steps are as follows:

步骤1、沉积界面层:采用厚度小于0.3mm的薄层碳纤维预制体作为复合材料增强体,采用化学气相渗透法在薄层碳纤维预制体上沉积热解碳PyC界面;Step 1. Depositing the interface layer: using a thin-layer carbon fiber prefabricated body with a thickness of less than 0.3 mm as a composite material reinforcement, and depositing a pyrolytic carbon PyC interface on the thin-layer carbon fiber prefabricated body by chemical vapor infiltration;

步骤2、溶液制备:称量0~20wt%烧结助剂,与聚碳硅烷PCS混合,使用磁力搅拌4~20h至均匀;Step 2, solution preparation: weigh 0-20wt% sintering aid, mix with polycarbosilane PCS, and use magnetic stirring for 4-20h until uniform;

步骤3、基体制备:将步骤1沉积PyC界面的薄层碳纤维预制体浸渍在步骤2制备的溶液中1~10h,然后在保护气氛下200~250℃交联固化2~3h,继续在800~900℃下裂解2~3h,获得薄层复合材料:重复本步骤,使得薄层复合材料密度超过80%;所述保护气氛为真空或氩气;Step 3, matrix preparation: immerse the thin-layer carbon fiber prefabricated body deposited on the PyC interface in step 1 in the solution prepared in step 2 for 1-10 hours, then cross-link and solidify at 200-250°C for 2-3 hours under a protective atmosphere, and continue to heat at 800-250°C for 2-3 hours. Pyrolysis at 900°C for 2 to 3 hours to obtain a thin-layer composite material: repeat this step, so that the density of the thin-layer composite material exceeds 80%; the protective atmosphere is vacuum or argon;

步骤4、复合材料制备:将多片步骤3制备的单层薄层复合材料叠层放入石墨模具内进行放电等离子烧结,烧结温度为1500~1900℃,载荷为30~100Mpa,保压时间2~10min,制备得到致密的C/SiC复合材料。Step 4. Composite material preparation: Laminate multiple sheets of single-layer thin-layer composite materials prepared in step 3 into a graphite mold for spark plasma sintering. The sintering temperature is 1500-1900°C, the load is 30-100Mpa, and the holding time is 2 ~10min, a dense C/SiC composite material was prepared.

所述步骤3中的重复本步骤为2~3次。Repeat this step in step 3 for 2 to 3 times.

所述步骤1中采用化学气相渗透法在薄层碳纤维预制体上沉积热解碳PyC界面时先驱体是丙烯、甲烷、乙炔、乙烯或其他碳氢化合物;条件为:以氩气为稀释气体,沉积温度为750~1100℃,时间为10~20h;而后在1600~1800℃热处理0.5~2h。In the step 1, the precursor is propylene, methane, acetylene, ethylene or other hydrocarbons when the pyrolytic carbon PyC interface is deposited on the thin-layer carbon fiber preform by chemical vapor infiltration; the conditions are: argon is used as the dilution gas, The deposition temperature is 750-1100° C., and the time is 10-20 hours; then heat treatment is performed at 1600-1800° C. for 0.5-2 hours.

所述薄层碳纤维预制体是二维碳布、二维半碳纤维薄层编织体、三维碳纤维薄层编织体以及薄层碳纤维针刺毡中的一种或多种。The thin-layer carbon fiber prefabricated body is one or more of two-dimensional carbon cloth, two-dimensional semi-carbon fiber thin-layer braided body, three-dimensional carbon fiber thin-layer braided body and thin-layer carbon fiber needle felt.

所述步骤4使用的烧结助剂是氧化铝、氧化镁、氧化锆、氧化钇、氧化镱、氧化铒、氧化钪、氧化铈以及其他稀土氧化物中的一种或多种。The sintering aid used in step 4 is one or more of alumina, magnesia, zirconia, yttrium oxide, ytterbium oxide, erbium oxide, scandium oxide, cerium oxide and other rare earth oxides.

所述烧结助剂总含量为5~20wt%。The total content of the sintering aid is 5-20 wt%.

所述步骤4中多片单层薄层复合材料为10~30片。The multi-piece single-layer thin-layer composite material in the step 4 is 10-30 pieces.

有益效果Beneficial effect

本发明涉及的快速制备C/SiC复合材料的方法,采用先驱体浸渍裂解(PIP)工艺结合放电等离子烧结(SPS)工艺快速制备C/SiC复合材料。有益效果是:本发明充分利用PIP法和SPS法的优点,快速制备纤维增强C/SiC复合材料。该方法利用PIP法浸渍薄层时间短以及SPS法烧结迅速的特点,从而实现C/SiC复合材料制备,适用于小型致密构件的致密,比传统CVI法和PIP法可以节省时间95%,并显著提高复合材料致密度,降低复合材料制造成本。图2为SPS制备的C/SiC复合材料的照片。The method for rapidly preparing a C/SiC composite material involved in the present invention adopts a precursor impregnation pyrolysis (PIP) process combined with a spark plasma sintering (SPS) process to rapidly prepare a C/SiC composite material. The beneficial effect is: the invention fully utilizes the advantages of the PIP method and the SPS method to rapidly prepare the fiber-reinforced C/SiC composite material. This method utilizes the characteristics of the PIP method to impregnate the thin layer in a short time and the SPS method to sinter quickly, so as to realize the preparation of C/SiC composite materials, which is suitable for the densification of small and dense components, and can save 95% of the time compared with the traditional CVI method and PIP method, and significantly Improve the density of composite materials and reduce the manufacturing cost of composite materials. Figure 2 is a photo of the C/SiC composite prepared by SPS.

附图说明Description of drawings

图1是本发明快速制备C/SiC复合材料的工艺流程图;Fig. 1 is the process flow diagram of the rapid preparation of C/SiC composite material of the present invention;

图2是SPS制备的C/SiC复合材料的照片。Figure 2 is a photo of the C/SiC composite prepared by SPS.

具体实施方式Detailed ways

现结合实施例、附图对本发明作进一步描述:Now in conjunction with embodiment, accompanying drawing, the present invention will be further described:

实施例1Example 1

步骤一:沉积界面层:采用厚度小于0.3mm的薄层碳纤维预制体作为复合材料增强体,采用化学气相渗透法沉积热解碳(PyC)界面。沉积热解时先驱体是丙烯、甲烷、乙炔、乙烯或其他碳氢化合物;条件为:以氩气为稀释气体,沉积温度为750~1100℃,时间为10~20h;而后在1600~1800℃热处理0.5~2h;Step 1: Depositing the interface layer: using a thin-layer carbon fiber prefabricated body with a thickness of less than 0.3 mm as a composite material reinforcement, and depositing a pyrolytic carbon (PyC) interface by chemical vapor infiltration. During pyrolysis, the precursor is propylene, methane, acetylene, ethylene or other hydrocarbons; the conditions are: argon is used as the dilution gas, the deposition temperature is 750-1100°C, and the time is 10-20h; and then at 1600-1800°C Heat treatment 0.5 ~ 2h;

步骤二:溶液制备:称量0~20wt%氧化铝或氧土金属氧化物和0~20wt%稀土氧化物作为烧结助剂,与聚碳硅烷(PCS)混合。使用磁力搅拌4~20h至均匀。Step 2: Solution preparation: weighing 0-20wt% aluminum oxide or earth metal oxide and 0-20wt% rare earth oxide as sintering aids, and mixing them with polycarbosilane (PCS). Use magnetic stirring for 4 ~ 20h until uniform.

步骤三:基体制备:沉积PyC界面的薄层碳纤维预制体浸渍混合溶液1~10h,取出,而后在保护气氛下200~250℃交联固化2~3h,800~900℃裂解2~3h,获得薄层复合材料。Step 3: Matrix preparation: The thin-layer carbon fiber preform deposited on the PyC interface is immersed in the mixed solution for 1-10 hours, taken out, and then cross-linked and cured at 200-250°C for 2-3 hours under a protective atmosphere, and cracked at 800-900°C for 2-3 hours to obtain thin-layer composites.

重复本步骤2~3次,致薄层复合材料密度超过80%。Repeat this step 2 to 3 times until the density of the thin-layer composite material exceeds 80%.

步骤四:复合材料制备:将10~30片单层复合材料叠层后放入石墨模具内进行放电等离子烧结,烧结温度为1500~1900℃,载荷为70Mpa,保压时间2~10min,最终快速制备得到致密的C/SiC复合材料。Step 4: Composite material preparation: Laminate 10-30 pieces of single-layer composite materials and put them into graphite molds for spark plasma sintering. The sintering temperature is 1500-1900°C, the load is 70Mpa, the holding time is 2-10min, and the final fast A dense C/SiC composite material was prepared.

实施例2Example 2

步骤一:沉积界面层:采用厚度小于0.3mm的薄层碳纤维预制体作为复合材料增强体,采用化学气相渗透法沉积热解碳(PyC)界面。沉积热解时先驱体是丙烯、甲烷、乙炔、乙烯或其他碳氢化合物;条件为:以氩气为稀释气体,沉积温度为750~1100℃,时间为10~20h;而后在1600~1800℃热处理0.5~2h;Step 1: Depositing the interface layer: using a thin-layer carbon fiber prefabricated body with a thickness of less than 0.3 mm as a composite material reinforcement, and depositing a pyrolytic carbon (PyC) interface by chemical vapor infiltration. During pyrolysis, the precursor is propylene, methane, acetylene, ethylene or other hydrocarbons; the conditions are: argon is used as the dilution gas, the deposition temperature is 750-1100°C, and the time is 10-20h; and then at 1600-1800°C Heat treatment 0.5 ~ 2h;

步骤二:溶液制备:称量0~20wt%氧化铝或氧土金属氧化物和0~20wt%稀土氧化物作为烧结助剂,与聚碳硅烷(PCS)混合。使用磁力搅拌4~20h至均匀。Step 2: Solution preparation: weighing 0-20wt% aluminum oxide or earth metal oxide and 0-20wt% rare earth oxide as sintering aids, and mixing them with polycarbosilane (PCS). Use magnetic stirring for 4 ~ 20h until uniform.

步骤三:基体制备:沉积PyC界面的薄层碳纤维预制体浸渍混合溶液1~10h,取出,而后在保护气氛下200~250℃交联固化2~3h,800~900℃裂解2~3h,获得薄层复合材料。Step 3: Matrix preparation: The thin-layer carbon fiber preform deposited on the PyC interface is immersed in the mixed solution for 1-10 hours, taken out, and then cross-linked and cured at 200-250°C for 2-3 hours under a protective atmosphere, and cracked at 800-900°C for 2-3 hours to obtain thin-layer composites.

重复本步骤2~3次,致薄层复合材料密度超过80%。Repeat this step 2 to 3 times until the density of the thin-layer composite material exceeds 80%.

步骤四:复合材料制备:将10~30片单层复合材料叠层后放入石墨模具内进行放电等离子烧结,烧结温度为1500~1900℃,载荷为80Mpa,保压时间2~10min,最终快速制备得到致密的C/SiC复合材料。Step 4: Composite material preparation: Laminate 10-30 single-layer composite materials and put them into graphite molds for spark plasma sintering. The sintering temperature is 1500-1900°C, the load is 80Mpa, the holding time is 2-10min, and the final fast A dense C/SiC composite material was prepared.

实施例3Example 3

步骤一:沉积界面层:采用厚度小于0.3mm的薄层碳纤维预制体作为复合材料增强体,采用化学气相渗透法沉积热解碳(PyC)界面。沉积热解时先驱体是丙烯、甲烷、乙炔、乙烯或其他碳氢化合物;条件为:以氩气为稀释气体,沉积温度为750~1100℃,时间为10~20h;而后在1600~1800℃热处理0.5~2h;Step 1: Depositing the interface layer: using a thin-layer carbon fiber prefabricated body with a thickness of less than 0.3 mm as a composite material reinforcement, and depositing a pyrolytic carbon (PyC) interface by chemical vapor infiltration. During pyrolysis, the precursor is propylene, methane, acetylene, ethylene or other hydrocarbons; the conditions are: argon is used as the dilution gas, the deposition temperature is 750-1100°C, and the time is 10-20h; and then at 1600-1800°C Heat treatment 0.5 ~ 2h;

步骤二:溶液制备:称量0~20wt%氧化铝或氧土金属氧化物和0~20wt%稀土氧化物作为烧结助剂,与聚碳硅烷(PCS)混合。使用磁力搅拌4~20h至均匀。Step 2: Solution preparation: weighing 0-20wt% aluminum oxide or earth metal oxide and 0-20wt% rare earth oxide as sintering aids, and mixing them with polycarbosilane (PCS). Use magnetic stirring for 4 ~ 20h until uniform.

步骤三:基体制备:沉积PyC界面的薄层碳纤维预制体浸渍混合溶液1~10h,取出,而后在保护气氛下200~250℃交联固化2~3h,800~900℃裂解2~3h,获得薄层复合材料。Step 3: Matrix preparation: The thin-layer carbon fiber preform deposited on the PyC interface is immersed in the mixed solution for 1-10 hours, taken out, and then cross-linked and cured at 200-250°C for 2-3 hours under a protective atmosphere, and cracked at 800-900°C for 2-3 hours to obtain thin-layer composites.

重复本步骤2~3次,致薄层复合材料密度超过80%。Repeat this step 2 to 3 times until the density of the thin-layer composite material exceeds 80%.

步骤四:复合材料制备:将10~30片单层复合材料叠层后放入石墨模具内进行放电等离子烧结,烧结温度为1500~1900℃,载荷为90Mpa,保压时间2~10min,最终快速制备得到致密的C/SiC复合材料。Step 4: Composite material preparation: Laminate 10-30 pieces of single-layer composite materials and put them into graphite molds for spark plasma sintering. The sintering temperature is 1500-1900°C, the load is 90Mpa, the holding time is 2-10min, and the final fast A dense C/SiC composite material was prepared.

Claims (7)

1. a fast preparation method for C/SiC matrix material, is characterized in that step is as follows:
Step 1, deposited interfacial layer: adopt thickness to be less than the coating carbon fibre precast body of 0.3mm as composite material reinforcement body, adopt chemical vapor infiltration to deposit RESEARCH OF PYROCARBON PyC interface on coating carbon fibre precast body;
Prepared by step 2, solution: weigh 0 ~ 20wt% sintering aid, mix with Polycarbosilane PCS, uses magnetic agitation 4 ~ 20h to even;
Prepared by step 3, matrix: coating carbon fibre precast body step 1 being deposited PyC interface is immersed in 1 ~ 10h in solution prepared by step 2, then 200 ~ 250 DEG C of crosslinking curing 2 ~ 3h under protective atmosphere, continue cracking 2 ~ 3h at 800 ~ 900 DEG C, obtain thin multilayer composite material: repeat this step, make thin multilayer composite material density more than 80%; Described protective atmosphere is vacuum or argon gas;
Prepared by step 4, matrix material: thin layer composite lay multi-disc step 3 prepared is put into graphite jig and carried out discharge plasma sintering, sintering temperature is 1500 ~ 1900 DEG C, load is 30 ~ 100Mpa, dwell time 2 ~ 10min, prepares fine and close C/SiC matrix material.
2. the fast preparation method of C/SiC matrix material according to claim 1, is characterized in that: this step of repetition in described step 3 is 2 ~ 3 times.
3. the fast preparation method of C/SiC matrix material according to claim 1, is characterized in that: when adopting chemical vapor infiltration to deposit RESEARCH OF PYROCARBON PyC interface in described step 1 on coating carbon fibre precast body, precursor is propylene, methane, acetylene, ethene or other hydrocarbon polymers; Condition is: take argon gas as diluent gas, and depositing temperature is 750 ~ 1100 DEG C, and the time is 10 ~ 20h; Then at 1600 ~ 1800 DEG C of thermal treatment 0.5 ~ 2h.
4. the fast preparation method of C/SiC matrix material according to claim 1, is characterized in that: described coating carbon fibre precast body is one or more in two-dimentional carbon cloth, two-dimentional half carbon fiber thin layers of woven body, three-dimensional carbon fibre thin layer knitted body and coating carbon fibre Nomex.
5. the fast preparation method of C/SiC matrix material according to claim 1, is characterized in that: the sintering aid that described step 4 uses is one or more in aluminum oxide, magnesium oxide, zirconium white, yttrium oxide, ytterbium oxide, Erbium trioxide, Scium trioxide, cerium oxide and other rare earth oxides.
6. the fast preparation method of C/SiC matrix material according to claim 1 or 5, is characterized in that: described sintering aid total content is 5 ~ 20wt%.
7. the fast preparation method of C/SiC matrix material according to claim 1, is characterized in that: in described step 4, multi-disc thin layer matrix material is 10 ~ 30.
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