CN104733636A - Organic electroluminescence device and preparing method thereof - Google Patents
Organic electroluminescence device and preparing method thereof Download PDFInfo
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- 238000005401 electroluminescence Methods 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 115
- 230000005540 biological transmission Effects 0.000 claims abstract description 40
- 238000002347 injection Methods 0.000 claims abstract description 34
- 239000007924 injection Substances 0.000 claims abstract description 34
- 239000000203 mixture Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 150000003577 thiophenes Chemical class 0.000 claims abstract description 15
- 230000008020 evaporation Effects 0.000 claims description 34
- 238000001704 evaporation Methods 0.000 claims description 34
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 31
- QENGPZGAWFQWCZ-UHFFFAOYSA-N 3-Methylthiophene Chemical compound CC=1C=CSC=1 QENGPZGAWFQWCZ-UHFFFAOYSA-N 0.000 claims description 24
- 238000002360 preparation method Methods 0.000 claims description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- 229930192474 thiophene Natural products 0.000 claims description 16
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical group O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 12
- RFKWIEFTBMACPZ-UHFFFAOYSA-N 3-dodecylthiophene Chemical compound CCCCCCCCCCCCC=1C=CSC=1 RFKWIEFTBMACPZ-UHFFFAOYSA-N 0.000 claims description 10
- WQYWXQCOYRZFAV-UHFFFAOYSA-N 3-octylthiophene Chemical compound CCCCCCCCC=1C=CSC=1 WQYWXQCOYRZFAV-UHFFFAOYSA-N 0.000 claims description 10
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 claims description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 10
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 claims description 10
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- -1 anode Substances 0.000 claims description 8
- 229920002554 vinyl polymer Polymers 0.000 claims description 8
- 229960001296 zinc oxide Drugs 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 8
- 229910000765 intermetallic Inorganic materials 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000011368 organic material Substances 0.000 claims description 7
- RNKGDBXXIBUOTR-UHFFFAOYSA-N 3,6-dioxocyclohexa-1,4-diene-1-carbonitrile Chemical compound O=C1C=CC(=O)C(C#N)=C1 RNKGDBXXIBUOTR-UHFFFAOYSA-N 0.000 claims description 6
- 229910003437 indium oxide Inorganic materials 0.000 claims description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- 229910001887 tin oxide Inorganic materials 0.000 claims description 6
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical class C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 4
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910021541 Vanadium(III) oxide Inorganic materials 0.000 claims description 4
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Natural products C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- MQCHTHJRANYSEJ-UHFFFAOYSA-N n-[(2-chlorophenyl)methyl]-1-(3-methylphenyl)benzimidazole-5-carboxamide Chemical compound CC1=CC=CC(N2C3=CC=C(C=C3N=C2)C(=O)NCC=2C(=CC=CC=2)Cl)=C1 MQCHTHJRANYSEJ-UHFFFAOYSA-N 0.000 claims description 4
- QWODREODAXFISP-UHFFFAOYSA-N n-[4-(4-anilinophenyl)phenyl]-n-phenylnaphthalen-1-amine Chemical compound C=1C=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=CC=1NC1=CC=CC=C1 QWODREODAXFISP-UHFFFAOYSA-N 0.000 claims description 4
- 125000001037 p-tolyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 4
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 4
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 claims description 4
- 239000004305 biphenyl Substances 0.000 claims description 3
- 238000002425 crystallisation Methods 0.000 abstract description 11
- 230000008025 crystallization Effects 0.000 abstract description 11
- 238000000149 argon plasma sintering Methods 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 3
- 238000004017 vitrification Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 23
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 229910052774 Proactinium Inorganic materials 0.000 description 8
- RAPHUPWIHDYTKU-WXUKJITCSA-N 9-ethyl-3-[(e)-2-[4-[4-[(e)-2-(9-ethylcarbazol-3-yl)ethenyl]phenyl]phenyl]ethenyl]carbazole Chemical compound C1=CC=C2C3=CC(/C=C/C4=CC=C(C=C4)C4=CC=C(C=C4)/C=C/C=4C=C5C6=CC=CC=C6N(C5=CC=4)CC)=CC=C3N(CC)C2=C1 RAPHUPWIHDYTKU-WXUKJITCSA-N 0.000 description 7
- GEQBRULPNIVQPP-UHFFFAOYSA-N 2-[3,5-bis(1-phenylbenzimidazol-2-yl)phenyl]-1-phenylbenzimidazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2N=C1C1=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=C1 GEQBRULPNIVQPP-UHFFFAOYSA-N 0.000 description 6
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 6
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 6
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- 239000012153 distilled water Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 description 4
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 4
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 4
- CRHRWHRNQKPUPO-UHFFFAOYSA-N 4-n-naphthalen-1-yl-1-n,1-n-bis[4-(n-naphthalen-1-ylanilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 CRHRWHRNQKPUPO-UHFFFAOYSA-N 0.000 description 4
- 230000009477 glass transition Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- FQJQNLKWTRGIEB-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-5-[3-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl]-1,3,4-oxadiazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=C(C=CC=2)C=2OC(=NN=2)C=2C=CC(=CC=2)C(C)(C)C)O1 FQJQNLKWTRGIEB-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000004770 highest occupied molecular orbital Methods 0.000 description 3
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Divinylene sulfide Natural products C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229920000891 common polymer Polymers 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/656—Aromatic compounds comprising a hetero atom comprising two or more different heteroatoms per ring
- H10K85/6565—Oxadiazole compounds
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses an organic electroluminescence device. The device comprises a substrate, an anode, a hole injection layer, a hole transmission layer, a light emitting layer, an electron transmission layer, an electron injection layer and a cathode which are overlapped in sequence. The electron injection layer of the organic electroluminescence device is made of mixtures of electron transmission materials, thiophene compounds and hole doping object materials. The electron transmission materials can be subjected to crystallization easily under the vitrification converting temperature of 50-100 DEG C, electron transmission speed can be improved, crystallization can happen easily, after crystallization, crystal arraying is in order, light scattering can be enhanced, light emitted to the two sides is scattered back to the middle to be emitted out, and light-out efficiency is improved. Compared with a traditional organic electroluminescence device, the organic electroluminescence device is high in light-emitting efficiency. The invention further discloses a preparing method of the organic electroluminescence device.
Description
Technical field
The present invention relates to field of organic electroluminescence, particularly relate to a kind of organic electroluminescence device and preparation method thereof.
Background technology
1987, C.W.Tang and VanSlyke of Eastman Kodak company of the U.S. reported the breakthrough in organic electroluminescent research.Ultrathin film technology is utilized to prepare high brightness, high efficiency double-deck organic electroluminescence device (OLED).Under 10V, brightness reaches 1000cd/m2, and its luminous efficiency is 1.51lm/W, the life-span is greater than 100 hours.
In traditional field of organic electroluminescence, all low than hole transport speed two or three orders of magnitude of electron transfer rate, thus very easily cause the low of exciton recombination probability, and make the region of its compound not at light-emitting zone, thus cause luminous efficiency to reduce.
Summary of the invention
Based on this, be necessary the organic electroluminescence device providing a kind of luminous efficiency higher.
A kind of organic electroluminescence device, comprise stack gradually substrate, anode, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and negative electrode;
The mixture of the electron transport material of the material of described electron injecting layer to be mass ratio be 15 ~ 30:0.3 ~ 1.5:0.1, thiophenes and hole doping guest materials;
Described electron transport material is 4,7-diphenyl-1,10-phenanthroline, 2-(4'-2-methyl-2-phenylpropane base)-5-(4'-xenyl)-1,3,4-oxadiazoles, 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene or 2,2'-(1,3-phenyl) two [5-(4-tert-butyl-phenyl)-1,3,4-oxadiazoles];
Described thiophenes is 3 methyl thiophene, 3 methyl thiophene, 3-octyl thiophene or 3-dodecylthiophene;
Described hole doping guest materials is 2,3,5,6-tetra-fluoro-7,7,8,8 ,-four cyano-benzoquinone's bismethane, 4,4,4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine or dinaphthyl-N, N '-diphenyl-4,4 '-benzidines.
In one embodiment, the thickness of described electron injecting layer is 15nm ~ 70nm.
In one embodiment, described anode is indium and tin oxide film, mix the zinc-oxide film of aluminium or mix the zinc-oxide film of indium, and the thickness of described anode is 50nm ~ 300nm.
In one embodiment, the material of described hole injection layer is molybdenum trioxide, tungstic acid or vanadic oxide, and the thickness of described hole injection layer is 20nm ~ 80nm.
In one embodiment, the material of described hole transmission layer is 1,1-bis-[4-[N, N '-two (p-tolyl) are amino] phenyl] cyclohexane, 4,4', 4''-tri-(carbazole-9-base) triphenylamine or N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine, the thickness of described hole transmission layer is 20nm ~ 60nm
In one embodiment, the material of described luminescent layer is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river pyridine of a specified duration-9-vinyl)-4H-pyrans, 9,10-bis--β-naphthylene anthracene, 4,4'-two (9-ethyl-3-carbazole vinyl)-1,1'-biphenyl or oxine aluminium, the thickness of described luminescent layer is 5nm ~ 40nm.
In one embodiment, the material of described electron transfer layer is 4,7-diphenyl-1,10-phenanthroline, 1,2,4-triazole derivative or N-aryl benzimidazole, and the thickness of described electron transfer layer is 40nm ~ 250nm.
In one embodiment, the material of described negative electrode is Ag, Al, Pt or Au, and the thickness of described negative electrode is 80nm ~ 250nm.
A preparation method for organic electroluminescence device, comprises the steps:
Surface preparation is carried out to substrate;
Magnetron sputtering prepares anode on the substrate;
On described anode, evaporation forms hole injection layer successively, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer, the electron transport material of the material of described electron injecting layer to be mass ratio be 15 ~ 30:0.3 ~ 1.5:0.1, the mixture of thiophenes and hole doping guest materials, described electron transport material is 4, 7-diphenyl-1, 10-phenanthroline, 2-(4'-2-methyl-2-phenylpropane base)-5-(4'-xenyl)-1, 3, 4-oxadiazoles, 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthrolene or 2, 2'-(1, 3-phenyl) two [5-(4-tert-butyl-phenyl)-1, 3, 4-oxadiazoles], described thiophenes is 3 methyl thiophene, 3 methyl thiophene, 3-octyl thiophene or 3-dodecylthiophene, described hole doping guest materials is 2, 3, 5, 6-tetra-fluoro-7, 7, 8, 8,-four cyano-benzoquinone's bismethane, 4, 4, 4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine or dinaphthyl-N, N '-diphenyl-4, 4 '-benzidine, and
On described electron injecting layer, evaporation forms negative electrode, obtains described organic electroluminescence device.
In one embodiment, the accelerating voltage of magnetron sputtering is 300V ~ 800V, and magnetic field is 50G ~ 200G, and power density is 1W/cm
2~ 40W/cm
2;
In evaporate process, operating pressure is 2 × 10
-3~ 5 × 10
-5pa, the evaporation rate of organic material is 0.1 ~ 1nm/s, and the evaporation rate of metal and metallic compound is 1 ~ 10nm/s.
The mixture of the electron transport material of the material of the electron injecting layer of this organic electroluminescence device to be mass ratio be 15 ~ 30:0.3 ~ 1.5:0.1, thiophenes and hole doping guest materials, electron transport material selects the electron transport material of the easy crystallization of glass transition temperature between 50 DEG C ~ 100 DEG C, the transmission rate of electronics can be improved and easily crystallization, after crystallization, crystal arrangement is orderly, the scattering of high light can be added, make the light scattering of launching to both sides get back to middle outgoing, improve light extraction efficiency; Thiophene compound segment is regular, orderly, is conducive to the transmission of charge carrier, meanwhile, can improve the segment regularity of molecules, be conducive to the scattering of light after adding; The HOMO energy level of hole doping guest materials is very low, can traverse to negative electrode one end and electronics generation compound and cancellation occurs by blocking hole, is conducive to improving luminous efficiency.
Relative to traditional organic electroluminescence device, this organic electroluminescence device luminous efficiency is higher.
Accompanying drawing explanation
Fig. 1 is the structural representation of the organic electroluminescence device of an execution mode;
Fig. 2 is the flow chart of the preparation method of the organic electroluminescence device of an execution mode;
Fig. 3 is the brightness of organic electroluminescence device for preparing of embodiment 1 and comparative example and the graph of a relation of luminous efficiency.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.Set forth a lot of detail in the following description so that fully understand the present invention.But the present invention can be much different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar improvement when intension of the present invention, therefore the present invention is by the restriction of following public concrete enforcement.
The organic electroluminescence device of an execution mode as shown in Figure 1, comprises the following structure stacked gradually: substrate 10, anode 20, hole injection layer 30, hole transmission layer 40, luminescent layer 50, electron transfer layer 60, electron injecting layer 70 and negative electrode 80.
Substrate 10 is glass.Generally speaking, simple glass.In special application, the special glass of special process processing and fabricating also can be selected.
Anode 20 can be indium and tin oxide film (ITO), mixes the zinc-oxide film (AZO) of aluminium or mix the zinc-oxide film (IZO) of indium, and the thickness of anode 20 is 50nm ~ 300nm.In one preferably embodiment, anode 20 is indium and tin oxide film (ITO), and the thickness of anode 20 is 120nm.
The material of hole injection layer 30 can be molybdenum trioxide (MoO
3), tungstic acid (WO
3) or vanadic oxide (V
2o
5).The thickness of hole injection layer 30 can be 20nm ~ 80nm.In one preferably embodiment, the material of hole injection layer 30 is molybdenum trioxide (MoO
3), the thickness of hole injection layer 30 is 24nm.
The material of hole transmission layer 40 can be 1,1-bis-[4-[N, N '-two (p-tolyl) is amino] phenyl] cyclohexane (TAPC), 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA) or N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB), the material of hole transmission layer 40 can be 20nm ~ 60nm.In one preferably embodiment, the material of hole transmission layer 40 is NPB, and the material of hole transmission layer 40 is 37nm.
The material of luminescent layer 50 can be 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river pyridine of a specified duration-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (9-ethyl-3-carbazole vinyl)-1, the 1'-biphenyl (BCzVBi) of 4'-or oxine aluminium (Alq
3), the thickness of luminescent layer 50 can be 5nm ~ 40nm.In one preferably embodiment, the material of luminescent layer 50 is BCzVBi, and the thickness of luminescent layer 50 is 21nm.
The material of electron transfer layer 60 can be electron transport material.The thickness of electron transfer layer 60 can be 40nm ~ 250nm.Electron transport layer materials can be 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (TAZ) or N-aryl benzimidazole (TPBI).In one preferably embodiment, the material of electron transfer layer 60 is TPBI, and the thickness of electron transfer layer 60 is 80nm.
The mixture of the electron transport material of the material of electron injecting layer 70 to be mass ratio be 15 ~ 30:0.3 ~ 1.5:0.1, thiophenes and hole doping guest materials.The thickness of electron injecting layer 70 is 15nm ~ 70nm.
Electron transport material selects the electron transport material of the easy crystallization of glass transition temperature between 50 DEG C ~ 100 DEG C, be specially 4,7-diphenyl-1,10-phenanthroline (Bphen), 2-(4'-2-methyl-2-phenylpropane base)-5-(4'-xenyl)-1,3,4-oxadiazoles (PBD), 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene (BCP) or 2,2'-(1,3-phenyl) two [5-(4-tert-butyl-phenyl)-1,3,4-oxadiazoles] (OXD-7).
Thiophenes is 3 methyl thiophene (3HT), 3 methyl thiophene (3AT), 3-octyl thiophene (3OT) or 3-dodecylthiophene (3DDT).These compounds, easily prepare, and can obtain on the market, and meanwhile, the ability of transporting holes is comparatively strong, and segment is in order regular, is common polymer monomer material.
Hole doping guest materials is 2,3,5,6-tetra-fluoro-7,7,8,8 ,-four cyano-benzoquinone's bismethane (F4-TCNQ), 4,4,4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine (1T-NATA) or dinaphthyl-N, N '-diphenyl-4,4 '-benzidine (2T-NATA).The HOMO energy level of these materials is higher, between-6.7eV ~-7.8eV, effectively can improve the injection efficiency in hole after doping, easily forms p doping.
The material of negative electrode 80 is Ag, Al, Pt or Au, and the thickness of negative electrode 80 is 80nm ~ 250nm.In one preferably embodiment, the material of negative electrode 80 is Ag, and the thickness of negative electrode 80 is 200nm.
The mixture of the electron transport material of the material of the electron injecting layer 70 of this organic electroluminescence device to be mass ratio be 15 ~ 30:0.3 ~ 1.5:0.1, thiophenes and hole doping guest materials, electron transport material selects the electron transport material of the easy crystallization of glass transition temperature between 50 DEG C ~ 100 DEG C, the transmission rate of electronics can be improved and easily crystallization, after crystallization, crystal arrangement is orderly, the scattering of high light can be added, make the light scattering of launching to both sides get back to middle outgoing, improve light extraction efficiency; Thiophene compound segment is regular, orderly, is conducive to the transmission of charge carrier, meanwhile, can improve the segment regularity of molecules, be conducive to the scattering of light after adding; The HOMO energy level of hole doping guest materials is very low, can traverse to negative electrode one end and electronics generation compound and cancellation occurs by blocking hole, is conducive to improving luminous efficiency.
Relative to traditional organic electroluminescence device, this organic electroluminescence device luminous efficiency is higher.
The preparation method of above-mentioned organic electroluminescence device as shown in Figure 2, comprises the steps:
S10, surface preparation is carried out to substrate 10.
Substrate 10 is glass.Generally speaking, simple glass.In special application, the special glass of special process processing and fabricating also can be selected.
The process of surface preparation is specially: after substrate 10 being rinsed well successively with distilled water and ethanol, be placed in isopropyl alcohol soaked overnight.
S20, on the substrate 10 magnetron sputtering prepare anode 20.
Anode 20 can be indium and tin oxide film (ITO), mixes the zinc-oxide film (AZO) of aluminium or mix the zinc-oxide film (IZO) of indium, and the thickness of anode 20 is 50nm ~ 300nm.In one preferably embodiment, anode 20 is indium and tin oxide film (ITO), and the thickness of anode 20 is 120nm.
The accelerating voltage of magnetron sputtering is 300V ~ 800V, and magnetic field is 50G ~ 200G, and power density is 1W/cm
2~ 40W/cm
2.
S30, on anode 20 successively evaporation formed hole injection layer 30, hole transmission layer 40, luminescent layer 50, electron transfer layer 60 and electron injecting layer 70.
In evaporate process, operating pressure is 2 × 10
-3~ 5 × 10
-5pa, the evaporation rate of organic material is 0.1 ~ 1nm/s, and the evaporation rate of metal and metallic compound is 1 ~ 10nm/s.
The material of hole injection layer 30 can be molybdenum trioxide (MoO
3), tungstic acid (WO
3) or vanadic oxide (V
2o
5).The thickness of hole injection layer 30 can be 20nm ~ 80nm.In one preferably embodiment, the material of hole injection layer 30 is molybdenum trioxide (MoO
3), the thickness of hole injection layer 30 is 24nm.
The material of hole transmission layer 40 can be 1,1-bis-[4-[N, N '-two (p-tolyl) is amino] phenyl] cyclohexane (TAPC), 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA) or N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB), the material of hole transmission layer 40 can be 20nm ~ 60nm.In one preferably embodiment, the material of hole transmission layer 40 is NPB, and the material of hole transmission layer 40 is 37nm.
The material of luminescent layer 50 can be 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river pyridine of a specified duration-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (9-ethyl-3-carbazole vinyl)-1, the 1'-biphenyl (BCzVBi) of 4'-or oxine aluminium (Alq
3), the thickness of luminescent layer 50 can be 5nm ~ 40nm.In one preferably embodiment, the material of luminescent layer 50 is BCzVBi, and the thickness of luminescent layer 50 is 21nm.
The material of electron transfer layer 60 can be electron transport material.The thickness of electron transfer layer 60 can be 40nm ~ 250nm.Electron transport layer materials can be 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (TAZ) or N-aryl benzimidazole (TPBI).In one preferably embodiment, the material of electron transfer layer 60 is TPBI, and the thickness of electron transfer layer 60 is 80nm.
The mixture of the electron transport material of the material of electron injecting layer 70 to be mass ratio be 15 ~ 30:0.3 ~ 1.5:0.1, thiophenes and hole doping guest materials.The thickness of electron injecting layer 70 is 15nm ~ 70nm.
Electron transport material selects the electron transport material of the easy crystallization of glass transition temperature between 50 DEG C ~ 100 DEG C, be specially 4,7-diphenyl-1,10-phenanthroline (Bphen), 2-(4'-2-methyl-2-phenylpropane base)-5-(4'-xenyl)-1,3,4-oxadiazoles (PBD), 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene (BCP) or 2,2'-(1,3-phenyl) two [5-(4-tert-butyl-phenyl)-1,3,4-oxadiazoles] (OXD-7).
Thiophenes is 3 methyl thiophene (3HT), 3 methyl thiophene (3AT), 3-octyl thiophene (3OT) or 3-dodecylthiophene (3DDT).
Hole doping guest materials is 2,3,5,6-tetra-fluoro-7,7,8,8 ,-four cyano-benzoquinone's bismethane (F4-TCNQ), 4,4,4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine (1T-NATA) or dinaphthyl-N, N '-diphenyl-4,4 '-benzidine (2T-NATA).
S40, on electron injecting layer 70 evaporation formed negative electrode 80, obtain organic electroluminescence device.
The evaporation rate of negative electrode 80 is 1nm/s ~ 10nm/s.
The material of negative electrode 80 is Ag, Al, Pt or Au, and the thickness of negative electrode 80 is 80nm ~ 250nm.In one preferably embodiment, the material of negative electrode 80 is Ag, and the thickness of negative electrode 80 is 200nm.
Preparation method's step of this organic electroluminescence device is simple, and simple and easy to do, the organic electroluminescence device luminous efficiency prepared is higher.
It is below specific embodiment, the test used in embodiment and Preparation equipment comprise: the high vacuum coating system (evaporation) of scientific instrument development center, Shenyang Co., Ltd, the USB4000 fiber spectrometer (testing electroluminescent spectrum) of U.S. marine optics Ocean Optics, the Keithley2400(of Keithley company of the U.S. tests electric property), the CS-100A colorimeter (test brightness and colourity) of Japanese Konica Minolta company.
Embodiment 1
A kind of organic electroluminescence device, comprise stack gradually substrate, anode, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and negative electrode, concrete structure is expressed as: glass/ITO/MoO
3/ NPB/BCzVBi/TPBI/BCP:3HT:F4-TCNQ/Ag.Preparation process is:
Commercially available simple glass is provided, after glass distilled water and ethanol being rinsed well successively, is placed in isopropyl alcohol soaked overnight.
Anode is prepared at surface-treated glass surface magnetron sputtering.The material of anode is ITO, and thickness is 120nm.The accelerating voltage of magnetron sputtering is 700V, and magnetic field is 120G, and power density is 25W/cm
2.
Be 8 × 10 in operating pressure
-4under the condition of Pa, be 0.2nm/s according to the evaporation rate of organic material, the evaporation rate of metal and metallic compound is 2nm/s, and on anode, evaporation prepares hole injection layer, hole transmission layer, luminescent layer and electron transfer layer successively.The material of hole injection layer is MoO
3, thickness is 24nm.The material of hole transmission layer is NPB, and thickness is 37nm.The material of luminescent layer is BCzVBi, and thickness is 21nm.The material of electron transfer layer is TPBI, and thickness is 80nm.The mixture of the material of electron injecting layer to be mass ratio be BCP, 3HT and F4-TCNQ of 20:0.8:0.1, thickness is 50nm.
Be 8 × 10 in operating pressure
-4under the condition of Pa, be 2nm/s according to the evaporation rate of metallic cathode, on electron injecting layer, evaporation forms negative electrode, obtains organic electroluminescence device.The material of negative electrode is Ag, and thickness is 200nm.
Organic electroluminescence device (simple glass/the ITO/MoO of organic electroluminescence device prepared by embodiment 1 as shown in Figure 3 and ordinary construction
3/ NPB/BCzVBi/TPBi/Cs
2cO
3/ Ag) brightness and the graph of a relation of luminous efficiency.
Curve 1 is the brightness of organic electroluminescence device and the relation curve of luminous efficiency of embodiment 1 preparation, and curve 2 is the brightness of the organic electroluminescence device of ordinary construction and the graph of a relation of luminous efficiency.
As seen from Figure 3, under same brightness, the luminous efficiency of organic electroluminescence device prepared by embodiment 1 is significantly higher than the luminous efficiency of the organic electroluminescence device of ordinary construction.The maximum luminous efficiency of organic electroluminescence device prepared by embodiment 1 is 5.35lm/W, and the maximum lumen efficiency of the organic electroluminescence device of ordinary construction is only 4.76lm/W, and the luminous efficiency of the organic electroluminescence device of ordinary construction declines fast along with the increase of brightness.This explanation, the electron injecting layer of organic electroluminescence device prepared by embodiment 1 can improve the transmission rate of electronics, add the scattering of high light, blocking hole traverses to negative electrode one end and electronics generation compound and cancellation occurs, and improves the luminous efficiency of organic electroluminescence device.
Embodiment 2
A kind of organic electroluminescence device, comprise stack gradually substrate, anode, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and negative electrode, concrete structure is expressed as: glass/IZO/V
2o
5/ TAPC/AND/TAZ/Bphen:3AT:1T-NATA/Al.Preparation process is:
Commercially available simple glass is provided, after glass distilled water and ethanol being rinsed well successively, is placed in isopropyl alcohol soaked overnight.
Anode is prepared at surface-treated glass surface magnetron sputtering.The material of anode is IZO, and thickness is 300nm.The accelerating voltage of magnetron sputtering is 300V, and magnetic field is 50G, and power density is 40W/cm
2.
Be 2 × 10 in operating pressure
-3under the condition of Pa, be 1nm/s according to the evaporation rate of organic material, the evaporation rate of metal and metallic compound is 10nm/s, and on anode, evaporation prepares hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer successively.The material of hole injection layer is V
2o
5, thickness is 20nm.The material of hole transmission layer is TAPC, and thickness is 45nm.The material of luminescent layer is ADN, and thickness is 5nm.The material of electron transfer layer is TAZ, and thickness is 65nm.The mixture of the material of electron injecting layer to be mass ratio be Bphen, 3AT and 1T-NATA of 15:0.3:0.1, thickness is 70nm.
Be 2 × 10 in operating pressure
-3under the condition of Pa, be 10nm/s according to the evaporation rate of metallic cathode, on electron injecting layer, evaporation forms negative electrode, obtains organic electroluminescence device.The material of negative electrode is Al, and thickness is 80nm.
Embodiment 3
A kind of organic electroluminescence device, comprise stack gradually substrate, anode, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and negative electrode, concrete structure is expressed as: glass/AZO/WO
3/ TCTA/Alq
3/ TAZ/PBD:3OT:2T-NATA/Au.Preparation process is:
Commercially available simple glass is provided, after glass distilled water and ethanol being rinsed well successively, is placed in isopropyl alcohol soaked overnight.
Anode is prepared at surface-treated glass surface magnetron sputtering.The material of anode is AZO, and thickness is 150nm.The accelerating voltage of magnetron sputtering is 800V, and magnetic field is 200G, and power density is 1W/cm
2.
Be 5 × 10 in operating pressure
-5under the condition of Pa, be 0.1nm/s according to the evaporation rate of organic material, the evaporation rate of metal and metallic compound is 1nm/s, and on anode, evaporation prepares hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer successively.The material of hole injection layer is WO
3, thickness is 55nm.The material of hole transmission layer is TCTA, and thickness is 60nm.The material of luminescent layer is Alq
3, thickness is 40nm.The material of electron transfer layer is TAZ, and thickness is 50nm.The mixture of the material of electron injecting layer to be mass ratio be PBD, 3OT and 2T-NATA of 30:1.5:0.1, thickness is 15nm.
Be 5 × 10 in operating pressure
-5under the condition of Pa, be 1nm/s according to the evaporation rate of metallic cathode, on electron injecting layer, evaporation forms negative electrode, obtains organic electroluminescence device.The material of negative electrode is Au, and thickness is 250nm.
Embodiment 4
A kind of organic electroluminescence device, comprise stack gradually substrate, anode, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and negative electrode, concrete structure is expressed as: glass/ITO/MoO
3/ TCTA/DCJTB/Bphen/OXD-7:3DDT:2T-NATA/Pt.Preparation process is:
Commercially available simple glass is provided, after glass distilled water and ethanol being rinsed well successively, is placed in isopropyl alcohol soaked overnight.
Anode is prepared at surface-treated glass surface magnetron sputtering.The material of anode is ITO, and thickness is 50nm.The accelerating voltage of magnetron sputtering is 600V, and magnetic field is 100G, and power density is 30W/cm
2.
Be 2 × 10 in operating pressure
-4under the condition of Pa, be 0.5nm/s according to the evaporation rate of organic material, the evaporation rate of metal and metallic compound is 6nm/s, and on anode, evaporation prepares hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer successively.The material of hole injection layer is MoO
3, thickness is 80nm.The material of hole transmission layer is TCTA, and thickness is 60nm.The material of luminescent layer is DCJTB, and thickness is 8nm.The material of electron transfer layer is Bphen, and thickness is 200nm.The mixture of the material of electron injecting layer to be mass ratio be OXD-7,3DDT and 2T-NATA of 25:0.4:0.1, thickness is 65nm.
Be 8 × 10 in operating pressure
-4under the condition of Pa, be 6nm/s according to the evaporation rate of metallic cathode, on electron injecting layer, evaporation forms negative electrode, obtains organic electroluminescence device.The material of negative electrode is Pt, and thickness is 160nm.
Above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (10)
1. an organic electroluminescence device, is characterized in that, comprise stack gradually substrate, anode, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and negative electrode;
The mixture of the electron transport material of the material of described electron injecting layer to be mass ratio be 15 ~ 30:0.3 ~ 1.5:0.1, thiophenes and hole doping guest materials;
Described electron transport material is 4,7-diphenyl-1,10-phenanthroline, 2-(4'-2-methyl-2-phenylpropane base)-5-(4'-xenyl)-1,3,4-oxadiazoles, 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene or 2,2'-(1,3-phenyl) two [5-(4-tert-butyl-phenyl)-1,3,4-oxadiazoles];
Described thiophenes is 3 methyl thiophene, 3 methyl thiophene, 3-octyl thiophene or 3-dodecylthiophene;
Described hole doping guest materials is 2,3,5,6-tetra-fluoro-7,7,8,8 ,-four cyano-benzoquinone's bismethane, 4,4,4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine or dinaphthyl-N, N '-diphenyl-4,4 '-benzidines.
2. organic electroluminescence device as claimed in claim 1, it is characterized in that, the thickness of described electron injecting layer is 15nm ~ 70nm.
3. organic electroluminescence device as claimed in claim 1, is characterized in that, described anode is indium and tin oxide film, mix the zinc-oxide film of aluminium or mix the zinc-oxide film of indium, and the thickness of described anode is 50nm ~ 300nm.
4. organic electroluminescence device as claimed in claim 1, it is characterized in that, the material of described hole injection layer is molybdenum trioxide, tungstic acid or vanadic oxide, and the thickness of described hole injection layer is 20nm ~ 80nm.
5. organic electroluminescence device as claimed in claim 1, it is characterized in that, the material of described hole transmission layer is 1,1-bis-[4-[N, N '-two (p-tolyl) are amino] phenyl] cyclohexane, 4,4', 4''-tri-(carbazole-9-base) triphenylamine or N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine, the thickness of described hole transmission layer is 20nm ~ 60nm.
6. organic electroluminescence device as claimed in claim 1, it is characterized in that, the material of described luminescent layer is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river pyridine of a specified duration-9-vinyl)-4H-pyrans, 9,10-bis--β-naphthylene anthracene, 4, two (9-ethyl-3-carbazole vinyl)-1, the 1'-biphenyl of 4'-or oxine aluminium, the thickness of described luminescent layer is 5nm ~ 40nm.
7. organic electroluminescence device as claimed in claim 1, it is characterized in that, the material of described electron transfer layer is 4,7-diphenyl-1,10-phenanthroline, 1,2,4-triazole derivative or N-aryl benzimidazole, the thickness of described electron transfer layer is 40nm ~ 250nm.
8. organic electroluminescence device as claimed in claim 1, it is characterized in that, the material of described negative electrode is Ag, Al, Pt or Au, and the thickness of described negative electrode is 80nm ~ 250nm.
9. a preparation method for organic electroluminescence device, is characterized in that, comprises the steps:
Surface preparation is carried out to substrate;
Magnetron sputtering prepares anode on the substrate;
On described anode, evaporation forms hole injection layer successively, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer, the electron transport material of the material of described electron injecting layer to be mass ratio be 15 ~ 30:0.3 ~ 1.5:0.1, the mixture of thiophenes and hole doping guest materials, described electron transport material is 4, 7-diphenyl-1, 10-phenanthroline, 2-(4'-2-methyl-2-phenylpropane base)-5-(4'-xenyl)-1, 3, 4-oxadiazoles, 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthrolene or 2, 2'-(1, 3-phenyl) two [5-(4-tert-butyl-phenyl)-1, 3, 4-oxadiazoles], described thiophenes is 3 methyl thiophene, 3 methyl thiophene, 3-octyl thiophene or 3-dodecylthiophene, described hole doping guest materials is 2, 3, 5, 6-tetra-fluoro-7, 7, 8, 8,-four cyano-benzoquinone's bismethane, 4, 4, 4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine or dinaphthyl-N, N '-diphenyl-4, 4 '-benzidine, and
On described electron injecting layer, evaporation forms negative electrode, obtains described organic electroluminescence device.
10. the preparation method of organic electroluminescence device as claimed in claim 9, it is characterized in that, the accelerating voltage of magnetron sputtering is 300V ~ 800V, and magnetic field is 50G ~ 200G, and power density is 1W/cm
2~ 40W/cm
2;
In evaporate process, operating pressure is 2 × 10
-3~ 5 × 10
-5pa, the evaporation rate of organic material is 0.1 ~ 1nm/s, and the evaporation rate of metal and metallic compound is 1 ~ 10nm/s.
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|---|---|---|---|---|
| CN108461640A (en) * | 2018-03-16 | 2018-08-28 | 中国科学院长春应用化学研究所 | Crystalline state organic electroluminescent LED and its application |
| WO2024208197A1 (en) * | 2023-04-03 | 2024-10-10 | Tcl科技集团股份有限公司 | Light-emitting device, manufacturing method therefor, and display apparatus |
-
2013
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461640A (en) * | 2018-03-16 | 2018-08-28 | 中国科学院长春应用化学研究所 | Crystalline state organic electroluminescent LED and its application |
| WO2024208197A1 (en) * | 2023-04-03 | 2024-10-10 | Tcl科技集团股份有限公司 | Light-emitting device, manufacturing method therefor, and display apparatus |
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