CN104105337A - Circuit board with high-density circuits and method for manufacturing the circuit board - Google Patents
Circuit board with high-density circuits and method for manufacturing the circuit board Download PDFInfo
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- CN104105337A CN104105337A CN201310124747.3A CN201310124747A CN104105337A CN 104105337 A CN104105337 A CN 104105337A CN 201310124747 A CN201310124747 A CN 201310124747A CN 104105337 A CN104105337 A CN 104105337A
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- copper foil
- perforation
- layer
- circuit board
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 99
- 239000002184 metal Substances 0.000 claims abstract description 99
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 124
- 239000011889 copper foil Substances 0.000 claims description 103
- 229910052802 copper Inorganic materials 0.000 claims description 19
- 239000010949 copper Substances 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 17
- 238000000608 laser ablation Methods 0.000 claims description 13
- 238000009713 electroplating Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 abstract 5
- 239000010410 layer Substances 0.000 description 90
- 239000011241 protective layer Substances 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 238000003466 welding Methods 0.000 description 11
- 238000002679 ablation Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
Landscapes
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
A circuit board with high-density circuits includes a dielectric layer, a plurality of metal pads embedded in the dielectric layer, a first conducting circuit layer and a second conducting circuit layer formed on two opposite surfaces of the dielectric layer, and a plurality of first through holes and a plurality of second through holes are formed in the dielectric layer. Each metal pad has a penetrating hole, each first through hole is communicated with a corresponding penetrating hole and a corresponding second through hole, the hole diameter of the penetrating hole is smaller than the hole diameters of the first through hole and the second through hole with which the penetrating hole is communicated, the communicated first through hole, second through hole and penetrating hole are filled with plated metal to form conducting holes, and the first conducting circuit layer and the second conducting circuit layer are electrically conducted through the conducting holes. The invention also provides a method for manufacturing the circuit board with the high-density circuits.
Description
Technical field
The present invention relates to circuit board making technical field, relate in particular to circuit board of a kind of high-density line and preparation method thereof.
Background technology
Base plate for packaging, for carries chips, is widely used in various electronic products.In order to realize the mutual conduction of circuit between the layer of different conducting wires, conventionally in base plate for packaging, make via.Than the base plate for packaging of higher-end, need to adopt metal to carry out consent to obtain the more stable base plate for packaging of performance.Because base plate for packaging is generally hardboard, medium thickness is wherein larger, conventionally adopts the mode of double-sided laser ablation to form through hole, carries out ablation from the relative two sides of dielectric layer, thereby the hole that both sides ablation is formed is interconnected, thereby obtains a through hole.But due to the characteristic of laser ablation, the hole of formation is reduced to inner aperture gradually by surface, cause being positioned at the diameter minimum of dielectric layer middle.In the time that the through hole forming is electroplated to consent, due to discharge effect and the competition of electroplating liquid medicine effect at the two ends of through hole, thereby cause the thickness of the electroplated metal layer forming near two ends and the less position of through hole median pore radius on dielectric layer surface at through hole larger, remainder is less.Along with electroplate consent continue carry out, the mid portion of through hole and two ends are plated metal level and fill completely, and other parts also have space.Because the two ends of through hole are closed, cause space not to be filled, thereby cause the electrical inefficacy of the conductive hole forming.
Summary of the invention
Therefore, be necessary circuit board providing a kind of high-density line and preparation method thereof, can improve the electric property of the interior conductive hole of circuit board of high-density line.
A manufacture method for the circuit board of high-density line, comprises step: the first Copper Foil is provided; At surperficial pressing the first film and second Copper Foil of described the first Copper Foil, make the first film between the first Copper Foil and the second Copper Foil; The second Copper Foil is made and formed multiple metal gaskets, and each metal gasket has perforation; Close the second film and the 3rd Copper Foil at the first film and one side pressure of multiple metal gasket, multiple metal gaskets are embedded in the second film, the first film and the second film are combined closely and are jointly formed dielectric layer, obtain multilager base plate;
In multilager base plate, form multiple the first through holes and the second through hole by the mode of double-sided laser ablation, and the dielectric layer material in perforation is removed, the perforation of each the first through hole, a metal gasket and second perforation are corresponding and be interconnected, and the aperture of described perforation is less than the first through hole of being communicated with it and the aperture of the second through hole; And adopt the mode of electroplating filling perforation that complete to the first through hole, perforation and the second through hole filled conductive metal is obtained to conductive hole, and forming the first conducting wire layer and the second conducting wire layer, described the first conducting wire layer and the second conducting wire layer conduct mutually by described conductive hole.
The circuit board of a kind of high-density line of metal gasket metal gasket metal gasket metal gasket metal gasket metal gasket, comprise dielectric layer, be embedded at multiple metal gaskets in dielectric layer, be formed at relative two the first surperficial conducting wire layers of dielectric layer and the second conducting wire layer, in described dielectric layer, be formed with multiple the first through holes and multiple the second through hole.Each metal gasket has perforation, the perforation that each the first through hole is corresponding with one and a second corresponding through hole are interconnected, the aperture of described perforation is less than the first through hole of being communicated with it and the aperture of the second through hole, in described the first through hole, the second through hole and the perforation being interconnected, filled up plated metal and formed conductive hole, described the first conducting wire layer and the second conducting wire layer conduct mutually by described conductive hole.Metal gasket metal gasket metal gasket
Compared with prior art, circuit board of the high-density line that the technical program provides and preparation method thereof in the process of circuit board of making high-density line, by adopting two films jointly to form dielectric layer, and is formed with metal gasket between two films.Carrying out in plated metal process, because the aperture of the perforation of metal gasket is less than the aperture of the first through hole and the second through hole.First the metal of electroplating fills perforation completely, thereby cause the metal that is plated of the first through hole and the second through hole to be separated into two parts that are separated from each other, like this, along with electroplate continue carry out, plated metal is in the sustainable growth of the both sides of the plated metal of perforation inside, until the first through hole and the second through hole are electroplated filling completely.Thereby can solve the problem of electroplating the generation space occurring in filling perforation process in prior art, thus ensured the high-density line forming circuit board there is stable electric property.
Brief description of the drawings
Fig. 1 is the first Copper Foil of providing of the technical program embodiment and the generalized section of supporting bracket.
Fig. 2 is that the surface of the first Copper Foil of Fig. 1 forms the generalized section after the first film and the second Copper Foil.
Fig. 3 is that the second Copper Foil of Fig. 2 is made the generalized section forming after metal gasket.
Fig. 4 is that the generalized section that obtains multilager base plate after the second film and the 3rd Copper Foil is closed in metal gasket one side pressure of Fig. 3.
Fig. 5 is the generalized section that obtains multilager base plate after the multilager base plate of Fig. 4 separates with supporting bracket.
Fig. 6 forms the generalized section after multiple through holes in the multilager base plate of Fig. 5.
Fig. 7 is the generalized section that the first copper foil surface, the 3rd copper foil surface and the through-hole wall of Fig. 6 forms chemical copper bed thickness.
Fig. 8 is that the through hole of Fig. 7 is electroplated the generalized section of filling and forming after the first conducting wire layer and the second conducting wire layer.
Fig. 9 is that the first conducting wire layer and the second layer surface, conducting wire of Fig. 8 forms respectively the generalized section after welding resisting layer.
Figure 10 is that the first electric contact mat and the second electric contact mat surface of Fig. 9 forms the generalized section after protective layer.
Main element symbol description
| The first Copper Foil | 110 |
| Supporting bracket | 120 |
| The first film | 130 |
| The second Copper Foil | 140 |
| Metal gasket | 141 |
| Perforation | 1411 |
| The second film | 150 |
| The 3rd Copper Foil | 160 |
| Multilager base plate | 101 |
| Dielectric layer | 105 |
| The first through hole | 1021 |
| The second through hole | 1022 |
| Chemical copper layer | 103 |
| Plated metal | 104 |
| The first conducting wire layer | 170 |
| The second conducting wire layer | 180 |
| The first electric contact mat | 171 |
| The second electric contact mat | 181 |
| The first welding resisting layer | 191 |
| The second welding resisting layer | 192 |
| The first opening | 1911 |
| The second opening | 1921 |
| The first protective layer | 172 |
| The second protective layer | 182 |
| Welding material | 183 |
| The circuit board of high-density line | 100 |
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
Below, illustrate that with Concrete facts example the technical program provides circuit board of described high-density line and preparation method thereof.
The manufacture method of the circuit board of the high-density line that the technical program embodiment provides comprises the steps:
The first step, refers to Fig. 1, and the first Copper Foil 110 is provided.
Described the first Copper Foil 110 for thickness be the Copper Foil of 5 microns to 15 microns.
In the present embodiment, in order to facilitate in follow-up manufacturing process, the first Copper Foil 110 is supported.In the also separable supporting bracket 120 that is fitted with of a side surface of the first Copper Foil 110.Described supporting bracket 120 can adopt metal to make, and also can adopt nonmetal making.The thickness of described supporting bracket 120 does not also limit, and it has a flat surface, can support described the first Copper Foil 110.
Second step, refers to Fig. 2, at surperficial pressing the first film 130 and second Copper Foil 140 of described the first Copper Foil 110, makes the first film 130 between the first Copper Foil 110 and the second Copper Foil 140.
Described the first film 130 can be semi-curing glue sheet, and its thickness is 30 microns to 100 microns.The thickness of described the second Copper Foil 140 is 10 microns to 30 microns.
The 3rd step, refers to Fig. 3, and the second Copper Foil 140 is made and formed multiple metal gaskets 141.Each metal gasket 141 has perforation 1411.In a preferred embodiment, the metal gasket 141 of formation is annular copper packing.
In the present embodiment, can adopt image transfer technique and etch process selective removal part the second Copper Foil 140, thereby obtain multiple metal gaskets 141.Particularly, can adopt with the following method: first, form photoresist layer on the surface of the second Copper Foil 140.Secondly, described photoresist layer exposed and developed, making the corresponding part of metal gasket 141 forming with wish stay the second Copper Foil 140 surfaces, remainder is developed removal.Again, the second Copper Foil 140 is carried out to etching, make the etched removal of the second Copper Foil 140 not covered by remaining photoresist layer.Finally, remove photoresist layer.
In the present embodiment, metal gasket 141 adopts etched mode to form.Be understandable that, metal gasket 141 also can adopt semi-additive process to form.
The 4th step, refer to Fig. 4, close the second film 150 and the 3rd Copper Foil 160 at the first film 130 and 141 1 side pressures of multiple metal gasket, multiple metal gaskets 141 are embedded in the second film 150, the first film 130 and the second film 150 are combined closely and are jointly formed dielectric layer 105, obtain multilager base plate 101.
In the present embodiment, the material of described the second film 150 and thickness can be identical with the first film 130.The thickness of the 3rd Copper Foil 160 can be identical with the thickness of the first Copper Foil 110.Be understandable that, the thickness of the thickness of described the second film 150 and the 3rd Copper Foil 160 can be designed to according to actual demand different thickness collocation.
At this, refer to Fig. 5, if the surface of the first Copper Foil 110 is fitted with supporting bracket 120, supporting bracket 120 need to be separated with the first Copper Foil 110.
The 5th step, refer to Fig. 6, in multilager base plate 101, form multiple the first through holes 1021 and the second through hole 1022 by the mode of double-sided laser ablation, and dielectric layer material in perforation 1411 is removed, the perforation 1411 of each the first through hole 1021, a metal gasket 141 and second through hole 1022 are corresponding and be interconnected.
Described the first through hole 1021 and the second through hole 1022 all adopt laser ablation to form, and the first through hole 1021 forms to metal gasket 141 direction ablations from the first Copper Foil 110.The aperture of the first through hole 1021 reduces to the bottom near metal gasket 141 gradually from the top near the first Copper Foil 110.Described the second through hole 1022 forms to metal gasket 141 direction ablations from the 3rd Copper Foil 160.The aperture of the second through hole 1022 reduces to the bottom near metal gasket 141 gradually from the top near the 3rd Copper Foil 160.The aperture of the bottom of the aperture of the bottom of described the first through hole 1021 and the second through hole 1022 is all greater than the aperture of the perforation 1411 of metal gasket 141.
Due to when form respectively the first through hole 1021 and the second through hole 1022 from both sides, all adopt the perforation 1411 of metal gasket 141 as contraposition reference, thereby can improve the aligning accuracy of both sides laser ablation pore-forming, and then corresponding each the first through hole 1021, the second through hole 1022 are coaxially arranged with corresponding perforation 1411.The present embodiment provides two kinds of methods in the interior formation through hole 102 of multilager base plate 101.
First method is: first, form brown layer on the surface of the first Copper Foil 110 and the 3rd Copper Foil 160.That is, oxidation processes is carried out in the surface of the first Copper Foil 110 and the 3rd Copper Foil 160, the surperficial copper that makes the first Copper Foil 110 and the 3rd Copper Foil 160 is oxidized and present brown.Like this, can, in the time that following adopted laser carries out ablation, increase the absorption to laser, thereby form hole in Copper Foil and film.Then, adopt the mode of laser ablation in multilager base plate 101, to form multiple the first through holes 1021 and the second through hole 1022.Adopt laser ablation in multilager base plate 101, to carry out ablation respectively from the first Copper Foil 110 1 sides and the 3rd Copper Foil one side.The hole that laser ablation forms reduces to the inside of multilager base plate gradually from the opening part on the first Copper Foil 110 surfaces.Finally, the brown layer forming is removed.
Second method is: first, form respectively photoresist layer on the surface of the first Copper Foil 110 and the 3rd Copper Foil 160, described photoresist layer can adopt the mode of pressing dry film to form.Then, described photoresist layer exposed and developed, making to form with wish the 3rd Copper Foil 160 that first Copper Foil 110 of correspondence position of the first through hole 1021 and wish form the correspondence position of the second through hole 1022 and expose.Then, adopt the mode of chemical etching, the first Copper Foil 110 not covered by photoresist layer and the 3rd Copper Foil 160 are removed.Then, carry out respectively laser ablation from the first film 130 and the second film 150 both sides, thereby form the first through hole 1021 and the second through hole 1022.Finally, the photoresist layer on the first Copper Foil 110 and the 3rd Copper Foil 160 surfaces is removed.
The 6th step, refers to Fig. 7 and Fig. 8, adopts the mode of electroplating filling perforation by the complete filled conductive metal of perforation 1411 of the first through hole 1021, the second through hole 1022 and metal gasket 141, and forms the first conducting wire layer 170 and the second conducting wire layer 180.
This step is specifically as follows: first, adopt the mode of electroless copper, form chemical copper layer 103 at surface, the surface of the 3rd Copper Foil 160 and inwall, the inwall of the second through hole 1022 and the inwall of perforation 1411 of each the first through hole 1021 of the first Copper Foil 110.In order to improve the surface of surface, the 3rd Copper Foil 160 of chemical copper layer 103 and the first Copper Foil 110 and the binding ability of inwall, the inwall of the second through hole 1022 and the inwall of perforation 1411 of the first through hole 1021, can be before electroless copper to multilager base plate 101 remove photoresist slag and microetch processing, to make inwall, the inwall of the second through hole 1022 and the inwall of perforation 1411, the surface of the first Copper Foil 110 and the surface cleaning of the 3rd Copper Foil 160 of the first through hole 1021 and to be roughened.
Then, form the first conducting wire layer 170 on the first film 130 surfaces, form the second conducting wire layer 180 on the second film 150 surfaces.Particularly, first form photoresist layer on the surface of the first Copper Foil 110 and the 3rd Copper Foil 160, and carry out exposure imaging, make to form the first conducting wire layer 170 with wish and part corresponding to the second conducting wire layer 180 is removed, other parts are still stayed the first Copper Foil 110 and the 3rd Copper Foil 160 surfaces.Then, adopt the mode of electroplating, plated metal is carried out on surface at the chemical copper layer 103 not covered by photoresist layer, the first through hole 1021, the second through hole 1022 and perforation 1411 are all completely filled, and also form plated metal 104 on chemical copper layer 103 surface on the first Copper Foil 110 and the 3rd Copper Foil 160 surfaces.Follow again, the photoresist layer on the first Copper Foil 110 and the 3rd Copper Foil 160 surfaces is removed.Finally, adopt the mode of fast-etching, remove not being plated the first Copper Foil 110 that metal 104 covers and the chemical copper layer 103 on the 3rd Copper Foil 160 surfaces.Owing to being plated the thickness of metal 104 and being greater than the thickness sum of chemical copper layer 103 and the first Copper Foil 110, also be greater than the thickness sum of chemical copper layer 103 and the 3rd Copper Foil 160, carrying out in the process of fast-etching, not being plated the first Copper Foil 110, the 3rd Copper Foil 160 and the chemical copper layer 103 that metal 104 covers removes, and plated metal 104 is only removed a part, like this, first Copper Foil 110 on the first film 130 surfaces, chemical copper layer 103 and plated metal 104 common formation the first conducting wire layers 170.The 3rd Copper Foil, chemical copper layer 103 and the plated metal 104 common formation second conducting wire layers 180 on the second film 150 surfaces.
Be understandable that, carrying out in plated metal process, because the aperture of the perforation 1411 of metal gasket 141 is less than the aperture of the first through hole 1021 and the second through hole 1022.First the metal of electroplating fills perforation 1411 completely, thereby cause the metal that is plated of the first through hole 1021 and the second through hole 1022 to be separated into two parts that are separated from each other, like this, along with electroplate continue carry out, plated metal is in the both sides sustainable growth of the plated metal of perforation 1411 inside, until the first through hole 1021 and the second through hole 1022 are electroplated filling completely.
The 7th step, refers to Fig. 9, forms the first welding resisting layer 191 in the first conducting wire layer 170 1 side, forms the second welding resisting layer 192 in the second conducting wire layer 180 1 side.
Described the first welding resisting layer 191 and the second welding resisting layer 192 can adopt the mode of solder-mask printing ink to form.In described the first welding resisting layer 191, have multiple the first openings 1911, part the first conducting wire layer 170 exposes from the first opening 1911, forms the first electric contact mat 171.In described the second welding resisting layer 192, have multiple the second openings 1921, part the second conducting wire layer 180 exposes from the second opening 1921, forms the second electric contact mat 181.
The 8th step, refers to Figure 10, forms the first protective layer 172 on the surface of the first electric contact mat 171, forms the second protective layer 182 on the surface of the second electric contact mat 181, obtains the circuit board 100 of high-density line.
Described the first protective layer 172 and the second protective layer 182 can be the single layer structure of the metals such as tin, lead, silver, gold, nickel, palladium or its alloy, can be also two kinds or two or more sandwich constructions in above-mentioned metal.The first protective layer 172 and the second protective layer 182 can be also organic guarantor's layer (OSP).In the time that the first protective layer 172 and the second protective layer 182 adopt metal to make, can adopt the mode of chemical plating to form.The first protective layer 172 and the second protective layer 182 when having organizational security layer, can adopt chemical method to form.
Be understandable that, the circuit board manufacturing method of the high-density line that the technical program provides can further include the step that forms welding material 183 on the surface of the first protective layer 172 and/or the second protective layer 182.
The technical program also provides a kind of circuit board 100 that adopts the high-density line that above-mentioned manufacture method makes, and the circuit board 100 of described high-density line comprises dielectric layer 105, be embedded at multiple metal gaskets 141 in dielectric layer, be formed at relative two the first surperficial conducting wire layers 170 of dielectric layer 105 and the second conducting wire layer 180.In described dielectric layer 105, be formed with multiple the first through holes 1021 and multiple the second through hole 1022.Each metal gasket 141 has perforation 1411, and each the first through hole 1021 and a perforation 1411 and second through hole 1022 are interconnected.The aperture of described perforation 1411 is less than the aperture of the bottom of the first through hole 1021 and the bottom of the second through hole 1022.In described the first through hole 1021, the second through hole 1022 and the perforation 1411 being interconnected, be filled with plated metal and form conductive hole, described the first conducting wire layer 170 and the second conducting wire layer 180 conduct mutually by described conductive hole.
In the present embodiment, the first Copper Foil 110, chemical copper layer 103 and plated metal 104 common formation the first conducting wire layers 170.The 3rd Copper Foil 160, chemical copper layer 103 and plated metal 104 common formation the second conducting wire layers 180.
Described the first through hole 1021 and the second through hole 1022 all adopt laser ablation to form, and the first through hole 1021 forms to metal gasket 141 direction ablations from the first Copper Foil 110.The aperture of the first through hole 1021 reduces to the bottom near metal gasket 141 gradually from the top near the first Copper Foil 110.Described the second through hole 1022 forms to metal gasket 141 direction ablations from the 3rd Copper Foil 160.The aperture of the second through hole 1022 reduces to the bottom near metal gasket 141 gradually from the top near the 3rd Copper Foil 160.The aperture of the bottom of the aperture of the bottom of described the first through hole 1021 and the second through hole 1022 is all greater than the aperture of the perforation 1411 of metal gasket 141.
Circuit board of the high-density line that the technical program provides and preparation method thereof in the process of circuit board of making high-density line, by adopting two films jointly to form dielectric layer, and is formed with metal gasket between two films.Carrying out in plated metal process, because the aperture of the perforation of metal gasket is less than the aperture of the first through hole and the second through hole.First the metal of electroplating fills perforation completely, thereby cause the metal that is plated of the first through hole and the second through hole to be separated into two parts that are separated from each other, like this, along with electroplate continue carry out, plated metal is in the sustainable growth of the both sides of the plated metal of perforation inside, until the first through hole and the second through hole are electroplated filling completely.Thereby can solve the problem of electroplating the generation space occurring in filling perforation process in prior art, thus ensured the high-density line forming circuit board there is stable electric property.
Be understandable that, for the person of ordinary skill of the art, can make other various corresponding changes and distortion by technical conceive according to the present invention, and all these change the protection range that all should belong to the claims in the present invention with distortion.
Claims (9)
1. the circuit board of a high-density line, comprise dielectric layer, be embedded at the multiple metal gaskets in dielectric layer, be formed at relative two the first surperficial conducting wire layers of dielectric layer and the second conducting wire layer, in described dielectric layer, be formed with multiple the first through holes and multiple the second through hole, each metal gasket has perforation, the perforation that each the first through hole is corresponding with one and a second corresponding through hole are interconnected, the aperture of described perforation is less than the first through hole of being communicated with it and the aperture of the second through hole, described the first through hole being interconnected, in the second through hole and perforation, fill up plated metal and formed conductive hole, described the first conducting wire layer and the second conducting wire layer conduct mutually by described conductive hole.
2. the circuit board of high-density line as claimed in claim 1, it is characterized in that, described the first through hole and the second through hole all have the surperficial top of close dielectric layer and the bottom near metal gasket, and from described top, to described bottom, the aperture of the first through hole and the second through hole reduces gradually.
3. the circuit board of high-density line as claimed in claim 2, is characterized in that, the aperture of described perforation is less than the aperture of the bottom of the first through hole, and the aperture of described perforation is also less than the aperture of the bottom of the second through hole.
4. the circuit board of high-density line as claimed in claim 1, is characterized in that, the central axes of the first through hole, the second through hole and the perforation being interconnected.
5. the circuit board of high-density line as claimed in claim 1, is characterized in that, described the first conducting wire layer and the second conducting wire layer form by Copper Foil, chemical copper layer and plated metal.
6. a manufacture method for the circuit board of high-density line, comprises step:
The first Copper Foil is provided;
At surperficial pressing the first film and second Copper Foil of described the first Copper Foil, make the first film between the first Copper Foil and the second Copper Foil;
The second Copper Foil is made and formed multiple metal gaskets, and each metal gasket has perforation;
Close the second film and the 3rd Copper Foil at the first film and one side pressure of multiple metal gasket, multiple metal gaskets are embedded in the second film, the first film and the second film are combined closely and are jointly formed dielectric layer, obtain multilager base plate;
In multilager base plate, form multiple the first through holes and the second through hole by the mode of double-sided laser ablation, and the dielectric layer material in perforation is removed, the perforation of each the first through hole, a metal gasket and second perforation are corresponding and be interconnected, and the aperture of described perforation is less than the first through hole of being communicated with it and the aperture of the second through hole;
; And
Adopt the mode of electroplating filling perforation that complete to the first through hole, perforation and the second through hole filled conductive metal is obtained to conductive hole, and forming the first conducting wire layer and the second conducting wire layer, described the first conducting wire layer and the second conducting wire layer conduct mutually by described conductive hole.
7. the manufacture method of the circuit board of high-density line as claimed in claim 6, is characterized in that, the thickness of described the first Copper Foil and the 3rd Copper Foil is 5 microns to 15 microns.
8. the manufacture method of the circuit board of high-density line as claimed in claim 6, is characterized in that, forms multiple the first through holes and the second through hole and comprise step in described multilager base plate:
Surface at the first Copper Foil and the 3rd Copper Foil forms brown layer;
Adopt the mode of double-sided laser ablation in multilager base plate, to form multiple the first through holes and the second through hole; And
The brown layer forming is removed.
9. the manufacture method of the circuit board of high-density line as claimed in claim 6, it is characterized in that, also be included in before surperficial pressing first film and the second Copper Foil of described the first Copper Foil, another surface at the first Copper Foil forms supporting bracket, and form multiple the first through holes and the second through hole in multilager base plate before, multilager base plate is separated with described supporting bracket.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310124747.3A CN104105337A (en) | 2013-04-11 | 2013-04-11 | Circuit board with high-density circuits and method for manufacturing the circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310124747.3A CN104105337A (en) | 2013-04-11 | 2013-04-11 | Circuit board with high-density circuits and method for manufacturing the circuit board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104105337A true CN104105337A (en) | 2014-10-15 |
Family
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310124747.3A Pending CN104105337A (en) | 2013-04-11 | 2013-04-11 | Circuit board with high-density circuits and method for manufacturing the circuit board |
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| CN (1) | CN104105337A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106507611A (en) * | 2015-09-07 | 2017-03-15 | 欣兴电子股份有限公司 | Method for manufacturing circuit board |
| CN109788663A (en) * | 2017-11-10 | 2019-05-21 | 鹏鼎控股(深圳)股份有限公司 | The production method of circuit board and circuit board obtained by this method |
| CN113473748A (en) * | 2020-03-30 | 2021-10-01 | 健鼎（湖北）电子有限公司 | Manufacturing method of multilayer connecting plate |
| CN113630984A (en) * | 2021-07-13 | 2021-11-09 | 广东世运电路科技股份有限公司 | Method for filling copper plating hole with high thickness-diameter ratio and core plate |
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| TW200524502A (en) * | 2003-12-18 | 2005-07-16 | Endicott Interconnect Tech Inc | Method of providing printed circuit board with conductive holes and board resulting therefrom |
| US20110155439A1 (en) * | 2009-12-24 | 2011-06-30 | Shinko Electric Industries Co., Ltd. | Multilayer wiring substrate and method of manufacturing the same |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200524502A (en) * | 2003-12-18 | 2005-07-16 | Endicott Interconnect Tech Inc | Method of providing printed circuit board with conductive holes and board resulting therefrom |
| US20110155439A1 (en) * | 2009-12-24 | 2011-06-30 | Shinko Electric Industries Co., Ltd. | Multilayer wiring substrate and method of manufacturing the same |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106507611A (en) * | 2015-09-07 | 2017-03-15 | 欣兴电子股份有限公司 | Method for manufacturing circuit board |
| CN109788663A (en) * | 2017-11-10 | 2019-05-21 | 鹏鼎控股(深圳)股份有限公司 | The production method of circuit board and circuit board obtained by this method |
| CN109788663B (en) * | 2017-11-10 | 2021-08-24 | 鹏鼎控股(深圳)股份有限公司 | Manufacturing method of circuit board and circuit board manufactured by same |
| CN113473748A (en) * | 2020-03-30 | 2021-10-01 | 健鼎（湖北）电子有限公司 | Manufacturing method of multilayer connecting plate |
| CN113630984A (en) * | 2021-07-13 | 2021-11-09 | 广东世运电路科技股份有限公司 | Method for filling copper plating hole with high thickness-diameter ratio and core plate |
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