CA2426124A1 - Use of metallic treatment on copper foil to produce fine lines and replace oxide process in printed circuit board production - Google Patents
Use of metallic treatment on copper foil to produce fine lines and replace oxide process in printed circuit board production Download PDFInfo
- Publication number
- CA2426124A1 CA2426124A1 CA002426124A CA2426124A CA2426124A1 CA 2426124 A1 CA2426124 A1 CA 2426124A1 CA 002426124 A CA002426124 A CA 002426124A CA 2426124 A CA2426124 A CA 2426124A CA 2426124 A1 CA2426124 A1 CA 2426124A1
- Authority
- CA
- Canada
- Prior art keywords
- conductive layer
- layer
- electrically conductive
- metal layer
- printed circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims abstract description 64
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 39
- 239000011889 copper foil Substances 0.000 title claims description 17
- 238000011282 treatment Methods 0.000 title abstract description 12
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 82
- 239000002184 metal Substances 0.000 claims abstract description 82
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 33
- 238000000151 deposition Methods 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 36
- 239000011888 foil Substances 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 26
- 229910052759 nickel Inorganic materials 0.000 claims description 18
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- 239000011135 tin Substances 0.000 claims description 10
- 229910052718 tin Inorganic materials 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 238000007788 roughening Methods 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000004593 Epoxy Substances 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 239000011152 fibreglass Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910001369 Brass Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010951 brass Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 230000002787 reinforcement Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- 239000004642 Polyimide Substances 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 2
- QUQFTIVBFKLPCL-UHFFFAOYSA-L copper;2-amino-3-[(2-amino-2-carboxylatoethyl)disulfanyl]propanoate Chemical compound [Cu+2].[O-]C(=O)C(N)CSSCC(N)C([O-])=O QUQFTIVBFKLPCL-UHFFFAOYSA-L 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229920001721 polyimide Polymers 0.000 claims 2
- 229920002844 BT-Epoxy Polymers 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 229920000106 Liquid crystal polymer Polymers 0.000 claims 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims 1
- 239000002131 composite material Substances 0.000 claims 1
- 239000004643 cyanate ester Substances 0.000 claims 1
- 229910001092 metal group alloy Inorganic materials 0.000 claims 1
- 229920000728 polyester Polymers 0.000 claims 1
- 229920006254 polymer film Polymers 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 description 22
- 239000010949 copper Substances 0.000 description 22
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- 229960003280 cupric chloride Drugs 0.000 description 5
- 238000003475 lamination Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- WOAHJDHKFWSLKE-UHFFFAOYSA-N 1,2-benzoquinone Chemical compound O=C1C=CC=CC1=O WOAHJDHKFWSLKE-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910000978 Pb alloy Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 239000008262 pumice Substances 0.000 description 2
- 238000005201 scrubbing Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229920000271 Kevlar® Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004761 kevlar Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- JRTYPQGPARWINR-UHFFFAOYSA-N palladium platinum Chemical compound [Pd].[Pt] JRTYPQGPARWINR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002534 radiation-sensitizing agent Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/064—Photoresists
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/384—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0302—Properties and characteristics in general
- H05K2201/0317—Thin film conductor layer; Thin film passive component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0338—Layered conductor, e.g. layered metal substrate, layered finish layer or layered thin film adhesion layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0355—Metal foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/072—Electroless plating, e.g. finish plating or initial plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0723—Electroplating, e.g. finish plating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
The invention relates to the manufacture of printed circuit boards having enhanced etch uniformity and resolution. The process eliminates the need for a black oxide treatment to improve adhesion and improves the ability to optically inspect the printed circuit boards. The process is performed by conducting steps (a) and (b) in either order: a) depositing a first surface of an electrically conductive layer onto a substrate, which electrically conductive layer has a roughened second surface opposite to the first surface;
b) depositing a thin metal layer onto the roughened second surface of the electrically conductive layer, which metal layer comprises a material having a different etch resistance property than that of the electrically conductive layer. Thereafter one deposits a photoresist onto the metal layer; imagewise exposes and develops the photoresist, thereby revealing underlying portions of the metal layer. The one removes the revealed underlying portions of the metal layer, thereby revealing underlying portions of the conductive layer and removes the revealed underlying portions of the conductive layer, to thereby produce a printed circuit layer.
b) depositing a thin metal layer onto the roughened second surface of the electrically conductive layer, which metal layer comprises a material having a different etch resistance property than that of the electrically conductive layer. Thereafter one deposits a photoresist onto the metal layer; imagewise exposes and develops the photoresist, thereby revealing underlying portions of the metal layer. The one removes the revealed underlying portions of the metal layer, thereby revealing underlying portions of the conductive layer and removes the revealed underlying portions of the conductive layer, to thereby produce a printed circuit layer.
Description
USE OF METALLIC TREATMENT ON COPPER FOIL TO PRODUCE
FINE LINES AND REPLACE OXIDE PROCESS IN PRINTED CIRCUIT
BOARD PRODUCTION
s BACKGROUND OF THE INVENTION
FIELD OF THE INVENTION
The present invention relates to the manufacture of printed circuit boards 1 o having enhanced etch uniformity and resolution. The process of this invention eliminates the need for a black oxide treatment to improve adhesion and improves the ability to optically inspect the printed circuit boards.
DESCRIPTION OF THE RELATED ART
15 Printed circuit boards have wide application in the field of electronics.
They are useful for large scale applications, such as in missiles and industrial control equipment, as well as in small scale devices, such as telephones, radios and .
personal computers. In particular, when utilizing printed circuits it is important that a high degree of accuracy and resolution is attained for very 20 small line and space widths (on the order of one hundred microns or less) to ensure good performance of the circuit.
The ability to produce accurate features having very small dimensions, on the order of one hundred microns or less, is extremely important in the production 25 of small and large scale equipment. The precision of the etching process becomes more important as the circuit patterns become ever smaller. It is well known in the art to use known photolithographic techniques to produce printed circuit boards having small features with high accuracy. In general, an electrically conductive foil is deposited onto a substrate and a photoresist is then deposited onto the foil. That photoresist is then imagewise exposed and developed, forming a pattern of small lines and spaces that are then etched into the conductive foil.
s Conventionally a matte side of a foil is laminated onto the substrate, mainly because the matte side of the foil is rougher and has better adhesion to the substrate than the shiny side of the foil. However, it has been found that by laminating the foil with the shiny side down against the substrate that much more accurate etching could be achieved because the copper grains are elongated and oriented vertically near the matte side and less side or horizontal etching occurs. In addition, there is less of a need to over etch to remove the tooth structure and treatment from the substrate, which results in better etch uniformity.
15 When laminating the shiny side of the foil onto a substrate, it is necessary to roughen the surface to provide sufficient adhesion. One method to accomplish this is to plate nodules to the shiny side of a copper foil. An example of this type of copper product is commercially available from Oak-Mitsui Inc., of Hoosick Falls, N.Y. as MLS. Another method that has been used is to deposit 2o roughening layers, such as nodules, on each side of the foil, forming "double treated" foils. With this process one gets superior resist adhesion, as well as the elimination of the oxide process. This has not been preferred in the industry because the exposed side of the foil may have the roughening layer damaged during handling.
When the matte side is against the laminate another known method of roughening the shiny layer is a process in which a copper foil is pre-roughened by chemical micro etching (using sodium persulfate or sulfuric acid/hydrogen peroxide which are available from MacDermid of Waterbury CT or Shipley Ronel of Marborough MA) or pumice scrubbing (machines available from LS
of Italy and Isioki of Japan) . The surface is later chemically treated to deposit a layer of black copper oxide (also available from MacDermid and Shipley Ronel), allowing another insulating substrate to be laminated over the circuit.
This sequence of chemical treatments is undesirable because it is cumbersome and introduces waste disposal problems with the chemicals used. Therefore, there is a need in the art for a process that does not have the problems of double treating a conductive foil and which does not need a black oxide treatment during the processing of multi-layer circuit boards, that will etch circuit lines and spaces with high resolution and accuracy.
Efforts are continuously being made in the art to improve techniques by which circuit boards are manufactured and thus the accuracy of these features. For example, see U.S. patent 5,240,807 which teaches a photoresist article having ~ 5 a portable, conformable, built-on etch mask useful for enhancing image contrast and reproducing parts having very small dimensions. Portions of a conductive foil underlying the photoresist are selectively etched to form a pattern of circuit lines. Another approach is disclosed in U.S. patent 6,042,711 which provides a metal foil with improved peel strength having a metal layer of a dusty dendritic deposit and a metal flash layer. Additionally, International Publication WO 00/03568 discloses a method of forming circuit lines on a substrate by applying a roughened conductive metal layer using a copper foil carrier.
In yet another approach, U.S. patent 5,679,230 provides a copper foil for use in the manufacture of printed circuit boards. This copper foil can be used to make multilayer circuit boards without requiring the conventional black oxide treatment to improve adhesion.
The present invention provides an approach to solving the problems of the prior art wherein a thin metal layer is deposited onto a conductive layer on a substrate. This metal layer acts as an etch mask during etching of the conductive layer, and improves etch accuracy and resolution. After etching, this thin metal layer remains on the conductive layer obviating the need for an oxide layer.
The metal layers employed in this process are also highly uniform and reflective, making the printed circuits formed thereby more compatible with automatic optical inspection equipment than printed circuits of the prior art.
Further, the metal layers used herein have high mechanical strength, and are highly resistant to mechanical damage, such as surface scratches and scuff marks.
The invention provides a process for producing a printed circuit layer comprising conducting steps (a) and (b) in either order:
a) depositing a first surface of an electrically conductive layer onto a substrate, which electrically conductive layer has a roughened second surface opposite to 2o the first surface;
b) depositing a thin metal layer onto the roughened second surface of the electrically conductive layer, which metal layer comprises a material having a different etch resistance property than that of the electrically conductive layer;
and then 25 c) depositing a photoresist onto the metal layer;
d) imagewise exposing and developing the photoresist, thereby revealing underlying portions of the metal layer;
e) removing the revealed underlying portions of the metal layer, thereby revealing underlying portions of the conductive layer; and f) removing the revealed underlying portions of the conductive layer, to thereby produce a printed circuit layer.
The invention also provides a printed circuit layer produced by the process of conducting steps a) and b) in either order:
a) depositing a first surface of an electrically conductive layer onto a substrate, which electrically conductive layer has a roughened second surface opposite to the first surface;
b) depositing a thin metal layer onto the roughened second surface of the 1 o electrically conductive layer, which metal layer comprises a material having a different etch resistance property than that of the electrically conductive layer;
and then c) depositing a photoresist onto the metal layer;
d) imagewise exposing and developing the photoresist, thereby revealing t 5 underlying portions of the metal layer;
e) removing the revealed underlying portions of the metal layer, thereby revealing underlying portions of the conductive layer; and f) removing the revealed underlying portions of the conductive layer.
2o DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
The invention broadly provides a process for producing a printed circuit layer and printed circuit board.
The first step in conducting the process of the present invention is to deposit a 25 layer of an electrically conductive material onto a suitable substrate.
Typical substrates are those suitable to be processed into a printed circuit or other microelectronic device. Suitable substrates for the present invention non-exclusively include polymers reinforced with materials such as fiberglass, aramid (Kevlar), aramid paper (Thermount), polybenzoxolate paper or combinations thereof. Of these epoxy with fiberglass reinforcement is the most preferred substrate. Also suitable are semiconductor materials such as gallium arsenide (GaAs), silicon and compositions containing silicon such as crystalline silicon, polysilicon, amorphous silicon, epitaxial silicon, and silicon dioxide (Si02) and mixtures thereof. The preferred thickness of the substrate is of from about 10 to about 200 microns, more preferably from about 10 to about 50 microns.
The conductive layer preferably comprises a material such as copper, zinc, l0 brass, chrome, , nickel, aluminum, stainless steel, iron, gold, silver, titanium and combinations and alloys thereof. Most preferably, the conductive layer is a copper foil.
Copper foils are preferably produced by electrodepositing copper from solution onto a rotating metal drum. The side of the foil next to the drum is typically the smooth or shiny side, while the other side has a relatively rough surface, also known as the matte side. This drum is usually made of stainless steel or titanium which acts as a cathode and receives the copper as it is deposited from solution. An anode is generally constructed from a lead alloy.
A cell voltage of about 5 to 10 volts is applied between the anode and the cathode to cause the copper to be deposited, while oxygen is evolved at the anode. This copper foil is then removed from the drum, cut to the required size, and laminated onto the substrate. Lamination is preferably conducted in a press at a minimum of about l 75°C, for about 30 minutes. Preferably, the press is under a vacuum of at least 28 inches of mercury, and maintained at a pressure of about 150 psi.
Preferably but not necessarily prior to lamination, the conductive foil is preferably, but not necessarily, electrolytically treated on the shiny side to form a roughening copper deposit, and electrolytically treated on the matte side to deposit micro nodules of a metal or alloy. These nodules are preferably copper or a copper alloy, and do not add roughness to the surface, but do increase adhesion to a substrate. The surface microstructure of the foil is measured by a profilometer, such as a Perthometer model M4P or SSP which is commercially available from Mahr Feinpruef Corporation of Cincinnati, Ohio. Topography measurements of the surface grain structure of peaks and valleys are made according to industry standard IPC-TM-650 Section 2.2.17 of the Institute for Interconnecting and Packaging Circuits of 2115 Sanders Road, Northbrook, Illinois 60062. In the measurement procedure, a measurement length Im over the sample surface is selected. Rz defined as the average maximum peak to valley height of five consecutive sampling lengths within the measurement length Im (where Io is Im/5). Rt is the maximum roughness depth and is the greatest perpendicular distance between the highest peak and the lowest valley within the measurement length Im. Rp is the maximum leveling depth and is the height of the highest peak within the measuring length Im. Ra, or average roughness, is defined as the arithmetic average value of all absolute distances of the roughness profile from the center line within the measuring length Im.
The parameters of importance for this invention are Rz and Ra. The surface treatments carried out produce a surface structure having peaks and valleys, which produce roughness parameters wherein Ra ranges from about 1 to about 10 microns and Rz ranges from about 2 to about 10 microns.
The surface treatments carried out produce a surface structure having peaks and valleys, on the shiny side, which produce roughness parameters wherein Ra ranges from about 1 to about 4 microns, preferably from about 2 to about 4 microns, and most preferably from about 3 to about 4 microns. The Rz value ranges from about 2 to about 4.5 microns, preferably from about 2.5 to about 4.5 microns, and more preferably from about 3 to about 4.5 microns.
The surface treatments carried out produce a surface structure having peaks and valleys, on the matte side, which produce roughness parameters wherein Ra ranges from about 4 to about 10 microns, preferably from about 4.5 to about 8 microns, and most preferably from about 5 to about 7.5 microns. The Rz value ranges from about 4 to about 10 microns, preferably from about 4 to about 9 microns, and more preferably from about 4 to about 7.5 microns.
Preferably, the shiny side has a copper deposit about 2 to 4.5 ~,m thick to produce an average roughness (Rz) of 2 ~m or greater. The matte side preferably will have a roughness Rz as made of about 4-7.5 Vim. The micro nodules of metal or alloy will have a size of about 0.5 Vim. Other metals may be deposited as micro nodules if desired, for example, zinc, indium, tin, cobalt, brass, bronze and the like. This process is more thoroughly described in U.S.
patent 5,679,230, which is incorporated herein by reference. The shiny surface has a peel strength ranging from about .7 kg/linear cm to about 1.6 kg/linear, preferably from about .9 kg/linear cm to about 1.6 kg/linear.
2o The matte surface has a peel strength ranging from about .9 kg/linear cm to about 2 kg/linear, preferably from about 1.1 kg/linear cm to about 2 kg/linear.
Peel strength is measured according to industry standard IPC-TM-650 Section 2.4.8 Revision C.
The conductive layer preferably has a thickness of from about 0.5 to about 200 microns, more preferably from about 9 to about 70 microns. The conductive layer may also be applied using any other well known method of metal deposition such as electroless deposition, coating, sputtering, evaporation or by lamination onto the substrate.
Also preferably but not necessarily prior to lamination, the foil is preferably, but not necessarily, electrolytically treated on either side with, a thin metal layer. This metal layer is preferably electrolytically deposited onto the conductive layer. The metal layer may also be deposited onto the conductive layer (after laminating to the substrate) by coating, sputtering, evaporation or by lamination onto the conductive layer. Preferably the metal layer is a thin film and comprises a material selected such as nickel, tin, palladium platinum, chromium, titanium, molybdenum or alloys thereof. Most preferably the 1 o metal layer comprises nickel or tin. The metal layer preferably has a thickness of from about .O1 to about 10 microns, more preferably from about .2 to about 3 microns. This metal layer will serve as an etch mask to define a pattern of circuit lines and spaces to be etched into the conductive layer.
~ 5 Once the metal layer is deposited onto the conductive layer, the next step is to selectively etch away portions of the metal layer, forming an etched pattern in the metal layer. This etched pattern is formed by well known photolithographic techniques using a photoresist composition.. First, a photoresist deposited directly onto the thin metal layer. The photoresist 2o composition may be positive working or negative working and is generally commercially available. The resist can be very thin (5 to 20 microns) since it's main function is to only define the thin metal layer and does not need to withstand severe etch conditions. This allows much greater resolution.
Suitable positive working photoresists are well known in the art and may 25 comprise an o-quinone diazide radiation sensitizer. The o-quinone diazide sensitizers include the o-quinone-4-or-5-sulfonyl-diazides disclosed in U. S.
Patents Nos. 2,797,213; 3,106,465; 3,148,983; 3,130,047; 3,201,329;
3,785,825; and 3,802,885. When o-quinone diazides are used, preferred binding resins include a water insoluble, aqueous alkaline soluble or swellable binding resin, which is preferably a novolak. Suitable positive photodielectric resins may be obtained commercially, for example, under the trade name of AZ-P4620 from Clariant Corporation of Somerville, New Jersey as well as Shipley I-line photoresist. Negative photoresists are also widely commercially available.
The photoresist is then imagewise exposed to actinic radiation such as light in the visible, ultraviolet or infrared regions of the spectrum through a mask, or scanned by an electron beam, ion or neutron beam or X-ray radiation. Actinic radiation may be in the form of incoherent light or coherent light, for example, light from a laser. The photoresist is then imagewise developed using a suitable solvent, such as an aqueous alkaline solution, thereby revealing underlying portions of the metal layer.
Subsequently, the revealed underlying portions of the metal layer are removed through well known etching techniques while not removing the portions underlying the remaining photoresist. Suitable etchants non-exclusively include acidic solutions, such as cupric chloride (preferable for etching of nickel) or nitric acid (preferable for etching of tin). Also preferred are ferric 2o chloride or sulfuric peroxide (hydrogen peroxide with sulfuric acid).
During this step, the portions of the conductive layer underlying the etched off portions of the metal layer are revealed. This patterned metal layer defines an excellent quality etch mask for etching the conductive layer with high accuracy and precision.
Next, the revealed underlying portions of the conductive layer are removed by etching while not removing the portions of the conductive layer underlying the non-removed portions of the metal layer. Suitable etchants for removing the conductive layer non-exclusively include alkaline solutions, such as ammonium chloride/ammonium hydroxide. This circuit board may then be rinsed and dried. The result is a printed circuit board having excellent resolution and uniformity, and having excellent performance.
In another preferred embodiment wherein the metal layer comprises nickel, a one pass etching process may be conducted. In this embodiment, after the photoresist has been imaged and developed, each of the revealed portions of the metal layer and the underlying electrically conductive layer may be etched in a cupric chloride etcher. For etching of other metal layers, including Tin, the appropriate etchant is unable to properly etch the underlying conductive foil and a second etching step is still required. This single etching step is preferred for etching lines or spaces of greater than about 3 mils. When a single etching step is used, it may also be necessary to increase the dwell time in the etcher by possibly 10'to 25% depending on the etch system. .Higher spray pressures and temperature may accomplish the same results.
After the circuit lines and spaces are etched through the metal layer and the conductive layer, the remaining photoresist can optionally be removed from the metal layer surface either by stripping with a suitable solvent or by asking by well known asking techniques. The photoresist may also be removed after 2o etching the metal layer, but prior to etching the conductive foil.
In a preferred asking process, plasma is generated in a microwave plasma generator located upstream of a stripping chamber and stripping gases pass through this generator so that reactive species produced from the gases in the plasma enter the stripping chamber. Plasma ions are removed such as by filtering from plasma radicals. The term "radical", as used herein is intended to define uncharged particles such as atoms or molecular fragments which are generated by the upstream plasma generator. The plasma generator may comprise any plasma generator known in the art. Plasma generators which are capable of providing a source of radicals, substantially without ions or electrons, are described, for example, in U.S. patent 5,174,856 and U.S.
patent 5,200,031, the disclosures of which are hereby incorporated by reference.
While any type of conventionally generated plasma may, in general, be used in the practice of the invention, preferably the plasma used is generated by a microwave plasma generator such as, for example, a Model AURA plasma generator commercially available from the GaSonics of San Jose, Cali~
Another upstream plasma generator which is capable of supplying a source of radicals in the substantial absence of electrons and/or ions is commercially available from Applied Materials, Inc. as an Advanced Strip Passivation (ASP) Chamber. Plasma ashers are also commercially available from Mattson Technology of Fremont, California. Ashing may also be performed in an anisotropic method through the use of in situ ashing in an etch chamber such as a TEL DRM 85, available from Tokyo Electron Ltd.
At this point, another insulating substrate may be laminated over the circuit without an additional roughening step and without black oxide treatment of the matte side of the foil. The thin metal layer does not need to be removed after etching and acts as an oxide replacement and supplies enough adhesion to form a multilayer structure. Also, the metal layer is more uniform and reflective than a conductive foil alone and is easily inspected using well known automatic optical inspection (AOI) equipment.
The following non-limiting examples serve to illustrate the invention.
A copper foil is treated on the shiny with copper nodules and a Zn-Cr barrier layer is applied. The matte side is also treated with nodules but is subsequently treated with nickel. The foil is laminated to an epoxy impregnated fiberglass (with the shiny side against the material) to form a substrate. A liquid photoresist is applied to the substrate to a thickness of 12 microns and exposed with UV light through a mask to from an image. The photoresist is developed using potassium carbonate, exposing the nickel surface. The nickel is removed using a cupric chloride etch, exposing the copper underneath. The copper is etched using an ammonia based system to define the traces. The photoresist removed using a sodium hydroxide solution. Holes are punched in the perimeter of the substrate based on the image pattern. These will be used to for registration. The traces are inspected using an automatic optical inspection machine and repaired if necessary (and allowed). The completed substrate with etched traces (core) is laminated between epoxy fiberglass with other cores (if required) with copper foil on the outside. This printed circuit board "blank" is drilled, external circuitry defined, and completed by putting on soldermask and solder. The finished board is tested and then assembled.
Example 1 is repeated except the matte side of the laminate is against the substrate and is treated with Zn-Cr. The shiny side has nodules plated as in Example 1 but is treated with nickel.
Example 2 is repeated except the shiny surface is roughened by microetching prior to the nickel treatment.
Example 2 is repeated except the shiny side is roughened by pumice scrubbing prior to nickel treatment.
Example 1 is repeated except the photoresist is of a permanent nature and is not removed after etching.
to rv n r ~rr~T r c Example 1 is repeated except etching is done in one step with cupric chloride.
Example 1 is repeated except the photoresist is exposed using a direct laser imaging system.
2o EXAMPLE 8 Example 1 is repeated except tin is plated in place of nickel and etching is done using nitric acid.
2s EXAMPLE 9 Copper foils are produced by electrodepositing copper from solution onto a rotating metal drum according to Example I of U.S. patent 3,293,109. Copper is dissolved in sulfuric acid and then electrodeposited in a solution of 70-g/L of copper as copper sulfate, 80-160 g/L of free sulfuric acid, at 40 -60 degrees C. The solution is brought into contact with a rotating metal dram, usually of titanium, which acts as a cathode and receives the copper as it is deposited from solution. The anode is constructed from a lead alloy. A cell voltage of about 5 to 10 volts is applied between the anode and the cathode to cause the copper to be deposited, while oxygen is evolved at the anode.
Copper builds up a continuous film of copper on the drum at a thickness of from about 18 to 70 Vim, which is removed, slit to the required width and finally wound in rolls. The side of the foil next to the drum is smooth (the to "shiny side") while the other side has a relatively rough surface (the "matte side").
Samples of the copper foil are treated on either of the shiny or matte sides to produce surface nodules according to U.S. patent 5,679,230. Other samples of the copper foil are microetched with cupric chloride on either of the shiny or matte sides. Samples of the copper are measured for surface roughness and peel strength. Surface roughness is measured according to IPC-TM-650 Section 2.2.17 and peel strength is measured according to IPC-TM-650 Section 2.4.8 Revision C. The following results are noted:
Copper Treatment Surface Peel Strength*
Foil Roughness Side (Ra in microns) (kg/ linear cm) Shiny None 0.25 <0.18 Shiny Micro-etch 1.20 0.39 Shiny Nodules 3.56 1.52 Matte None 5.08 0.63 Matte Micro-etch 5.72 0.93 3o Matte Nodules 7.60 1.91 * Peel strength was determined by laminating the copper to an epoxy prepreg.
This simulates the peel strength inside the finished circuit board.
While the present invention has been particularly shown and described with reference to preferred embodiments, it will be readily appreciated by those of ordinary skill in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. It is intended that the claims be interpreted to cover the disclosed embodiment, those alternatives 1o which have been discussed above and all equivalents thereto.
FINE LINES AND REPLACE OXIDE PROCESS IN PRINTED CIRCUIT
BOARD PRODUCTION
s BACKGROUND OF THE INVENTION
FIELD OF THE INVENTION
The present invention relates to the manufacture of printed circuit boards 1 o having enhanced etch uniformity and resolution. The process of this invention eliminates the need for a black oxide treatment to improve adhesion and improves the ability to optically inspect the printed circuit boards.
DESCRIPTION OF THE RELATED ART
15 Printed circuit boards have wide application in the field of electronics.
They are useful for large scale applications, such as in missiles and industrial control equipment, as well as in small scale devices, such as telephones, radios and .
personal computers. In particular, when utilizing printed circuits it is important that a high degree of accuracy and resolution is attained for very 20 small line and space widths (on the order of one hundred microns or less) to ensure good performance of the circuit.
The ability to produce accurate features having very small dimensions, on the order of one hundred microns or less, is extremely important in the production 25 of small and large scale equipment. The precision of the etching process becomes more important as the circuit patterns become ever smaller. It is well known in the art to use known photolithographic techniques to produce printed circuit boards having small features with high accuracy. In general, an electrically conductive foil is deposited onto a substrate and a photoresist is then deposited onto the foil. That photoresist is then imagewise exposed and developed, forming a pattern of small lines and spaces that are then etched into the conductive foil.
s Conventionally a matte side of a foil is laminated onto the substrate, mainly because the matte side of the foil is rougher and has better adhesion to the substrate than the shiny side of the foil. However, it has been found that by laminating the foil with the shiny side down against the substrate that much more accurate etching could be achieved because the copper grains are elongated and oriented vertically near the matte side and less side or horizontal etching occurs. In addition, there is less of a need to over etch to remove the tooth structure and treatment from the substrate, which results in better etch uniformity.
15 When laminating the shiny side of the foil onto a substrate, it is necessary to roughen the surface to provide sufficient adhesion. One method to accomplish this is to plate nodules to the shiny side of a copper foil. An example of this type of copper product is commercially available from Oak-Mitsui Inc., of Hoosick Falls, N.Y. as MLS. Another method that has been used is to deposit 2o roughening layers, such as nodules, on each side of the foil, forming "double treated" foils. With this process one gets superior resist adhesion, as well as the elimination of the oxide process. This has not been preferred in the industry because the exposed side of the foil may have the roughening layer damaged during handling.
When the matte side is against the laminate another known method of roughening the shiny layer is a process in which a copper foil is pre-roughened by chemical micro etching (using sodium persulfate or sulfuric acid/hydrogen peroxide which are available from MacDermid of Waterbury CT or Shipley Ronel of Marborough MA) or pumice scrubbing (machines available from LS
of Italy and Isioki of Japan) . The surface is later chemically treated to deposit a layer of black copper oxide (also available from MacDermid and Shipley Ronel), allowing another insulating substrate to be laminated over the circuit.
This sequence of chemical treatments is undesirable because it is cumbersome and introduces waste disposal problems with the chemicals used. Therefore, there is a need in the art for a process that does not have the problems of double treating a conductive foil and which does not need a black oxide treatment during the processing of multi-layer circuit boards, that will etch circuit lines and spaces with high resolution and accuracy.
Efforts are continuously being made in the art to improve techniques by which circuit boards are manufactured and thus the accuracy of these features. For example, see U.S. patent 5,240,807 which teaches a photoresist article having ~ 5 a portable, conformable, built-on etch mask useful for enhancing image contrast and reproducing parts having very small dimensions. Portions of a conductive foil underlying the photoresist are selectively etched to form a pattern of circuit lines. Another approach is disclosed in U.S. patent 6,042,711 which provides a metal foil with improved peel strength having a metal layer of a dusty dendritic deposit and a metal flash layer. Additionally, International Publication WO 00/03568 discloses a method of forming circuit lines on a substrate by applying a roughened conductive metal layer using a copper foil carrier.
In yet another approach, U.S. patent 5,679,230 provides a copper foil for use in the manufacture of printed circuit boards. This copper foil can be used to make multilayer circuit boards without requiring the conventional black oxide treatment to improve adhesion.
The present invention provides an approach to solving the problems of the prior art wherein a thin metal layer is deposited onto a conductive layer on a substrate. This metal layer acts as an etch mask during etching of the conductive layer, and improves etch accuracy and resolution. After etching, this thin metal layer remains on the conductive layer obviating the need for an oxide layer.
The metal layers employed in this process are also highly uniform and reflective, making the printed circuits formed thereby more compatible with automatic optical inspection equipment than printed circuits of the prior art.
Further, the metal layers used herein have high mechanical strength, and are highly resistant to mechanical damage, such as surface scratches and scuff marks.
The invention provides a process for producing a printed circuit layer comprising conducting steps (a) and (b) in either order:
a) depositing a first surface of an electrically conductive layer onto a substrate, which electrically conductive layer has a roughened second surface opposite to 2o the first surface;
b) depositing a thin metal layer onto the roughened second surface of the electrically conductive layer, which metal layer comprises a material having a different etch resistance property than that of the electrically conductive layer;
and then 25 c) depositing a photoresist onto the metal layer;
d) imagewise exposing and developing the photoresist, thereby revealing underlying portions of the metal layer;
e) removing the revealed underlying portions of the metal layer, thereby revealing underlying portions of the conductive layer; and f) removing the revealed underlying portions of the conductive layer, to thereby produce a printed circuit layer.
The invention also provides a printed circuit layer produced by the process of conducting steps a) and b) in either order:
a) depositing a first surface of an electrically conductive layer onto a substrate, which electrically conductive layer has a roughened second surface opposite to the first surface;
b) depositing a thin metal layer onto the roughened second surface of the 1 o electrically conductive layer, which metal layer comprises a material having a different etch resistance property than that of the electrically conductive layer;
and then c) depositing a photoresist onto the metal layer;
d) imagewise exposing and developing the photoresist, thereby revealing t 5 underlying portions of the metal layer;
e) removing the revealed underlying portions of the metal layer, thereby revealing underlying portions of the conductive layer; and f) removing the revealed underlying portions of the conductive layer.
2o DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
The invention broadly provides a process for producing a printed circuit layer and printed circuit board.
The first step in conducting the process of the present invention is to deposit a 25 layer of an electrically conductive material onto a suitable substrate.
Typical substrates are those suitable to be processed into a printed circuit or other microelectronic device. Suitable substrates for the present invention non-exclusively include polymers reinforced with materials such as fiberglass, aramid (Kevlar), aramid paper (Thermount), polybenzoxolate paper or combinations thereof. Of these epoxy with fiberglass reinforcement is the most preferred substrate. Also suitable are semiconductor materials such as gallium arsenide (GaAs), silicon and compositions containing silicon such as crystalline silicon, polysilicon, amorphous silicon, epitaxial silicon, and silicon dioxide (Si02) and mixtures thereof. The preferred thickness of the substrate is of from about 10 to about 200 microns, more preferably from about 10 to about 50 microns.
The conductive layer preferably comprises a material such as copper, zinc, l0 brass, chrome, , nickel, aluminum, stainless steel, iron, gold, silver, titanium and combinations and alloys thereof. Most preferably, the conductive layer is a copper foil.
Copper foils are preferably produced by electrodepositing copper from solution onto a rotating metal drum. The side of the foil next to the drum is typically the smooth or shiny side, while the other side has a relatively rough surface, also known as the matte side. This drum is usually made of stainless steel or titanium which acts as a cathode and receives the copper as it is deposited from solution. An anode is generally constructed from a lead alloy.
A cell voltage of about 5 to 10 volts is applied between the anode and the cathode to cause the copper to be deposited, while oxygen is evolved at the anode. This copper foil is then removed from the drum, cut to the required size, and laminated onto the substrate. Lamination is preferably conducted in a press at a minimum of about l 75°C, for about 30 minutes. Preferably, the press is under a vacuum of at least 28 inches of mercury, and maintained at a pressure of about 150 psi.
Preferably but not necessarily prior to lamination, the conductive foil is preferably, but not necessarily, electrolytically treated on the shiny side to form a roughening copper deposit, and electrolytically treated on the matte side to deposit micro nodules of a metal or alloy. These nodules are preferably copper or a copper alloy, and do not add roughness to the surface, but do increase adhesion to a substrate. The surface microstructure of the foil is measured by a profilometer, such as a Perthometer model M4P or SSP which is commercially available from Mahr Feinpruef Corporation of Cincinnati, Ohio. Topography measurements of the surface grain structure of peaks and valleys are made according to industry standard IPC-TM-650 Section 2.2.17 of the Institute for Interconnecting and Packaging Circuits of 2115 Sanders Road, Northbrook, Illinois 60062. In the measurement procedure, a measurement length Im over the sample surface is selected. Rz defined as the average maximum peak to valley height of five consecutive sampling lengths within the measurement length Im (where Io is Im/5). Rt is the maximum roughness depth and is the greatest perpendicular distance between the highest peak and the lowest valley within the measurement length Im. Rp is the maximum leveling depth and is the height of the highest peak within the measuring length Im. Ra, or average roughness, is defined as the arithmetic average value of all absolute distances of the roughness profile from the center line within the measuring length Im.
The parameters of importance for this invention are Rz and Ra. The surface treatments carried out produce a surface structure having peaks and valleys, which produce roughness parameters wherein Ra ranges from about 1 to about 10 microns and Rz ranges from about 2 to about 10 microns.
The surface treatments carried out produce a surface structure having peaks and valleys, on the shiny side, which produce roughness parameters wherein Ra ranges from about 1 to about 4 microns, preferably from about 2 to about 4 microns, and most preferably from about 3 to about 4 microns. The Rz value ranges from about 2 to about 4.5 microns, preferably from about 2.5 to about 4.5 microns, and more preferably from about 3 to about 4.5 microns.
The surface treatments carried out produce a surface structure having peaks and valleys, on the matte side, which produce roughness parameters wherein Ra ranges from about 4 to about 10 microns, preferably from about 4.5 to about 8 microns, and most preferably from about 5 to about 7.5 microns. The Rz value ranges from about 4 to about 10 microns, preferably from about 4 to about 9 microns, and more preferably from about 4 to about 7.5 microns.
Preferably, the shiny side has a copper deposit about 2 to 4.5 ~,m thick to produce an average roughness (Rz) of 2 ~m or greater. The matte side preferably will have a roughness Rz as made of about 4-7.5 Vim. The micro nodules of metal or alloy will have a size of about 0.5 Vim. Other metals may be deposited as micro nodules if desired, for example, zinc, indium, tin, cobalt, brass, bronze and the like. This process is more thoroughly described in U.S.
patent 5,679,230, which is incorporated herein by reference. The shiny surface has a peel strength ranging from about .7 kg/linear cm to about 1.6 kg/linear, preferably from about .9 kg/linear cm to about 1.6 kg/linear.
2o The matte surface has a peel strength ranging from about .9 kg/linear cm to about 2 kg/linear, preferably from about 1.1 kg/linear cm to about 2 kg/linear.
Peel strength is measured according to industry standard IPC-TM-650 Section 2.4.8 Revision C.
The conductive layer preferably has a thickness of from about 0.5 to about 200 microns, more preferably from about 9 to about 70 microns. The conductive layer may also be applied using any other well known method of metal deposition such as electroless deposition, coating, sputtering, evaporation or by lamination onto the substrate.
Also preferably but not necessarily prior to lamination, the foil is preferably, but not necessarily, electrolytically treated on either side with, a thin metal layer. This metal layer is preferably electrolytically deposited onto the conductive layer. The metal layer may also be deposited onto the conductive layer (after laminating to the substrate) by coating, sputtering, evaporation or by lamination onto the conductive layer. Preferably the metal layer is a thin film and comprises a material selected such as nickel, tin, palladium platinum, chromium, titanium, molybdenum or alloys thereof. Most preferably the 1 o metal layer comprises nickel or tin. The metal layer preferably has a thickness of from about .O1 to about 10 microns, more preferably from about .2 to about 3 microns. This metal layer will serve as an etch mask to define a pattern of circuit lines and spaces to be etched into the conductive layer.
~ 5 Once the metal layer is deposited onto the conductive layer, the next step is to selectively etch away portions of the metal layer, forming an etched pattern in the metal layer. This etched pattern is formed by well known photolithographic techniques using a photoresist composition.. First, a photoresist deposited directly onto the thin metal layer. The photoresist 2o composition may be positive working or negative working and is generally commercially available. The resist can be very thin (5 to 20 microns) since it's main function is to only define the thin metal layer and does not need to withstand severe etch conditions. This allows much greater resolution.
Suitable positive working photoresists are well known in the art and may 25 comprise an o-quinone diazide radiation sensitizer. The o-quinone diazide sensitizers include the o-quinone-4-or-5-sulfonyl-diazides disclosed in U. S.
Patents Nos. 2,797,213; 3,106,465; 3,148,983; 3,130,047; 3,201,329;
3,785,825; and 3,802,885. When o-quinone diazides are used, preferred binding resins include a water insoluble, aqueous alkaline soluble or swellable binding resin, which is preferably a novolak. Suitable positive photodielectric resins may be obtained commercially, for example, under the trade name of AZ-P4620 from Clariant Corporation of Somerville, New Jersey as well as Shipley I-line photoresist. Negative photoresists are also widely commercially available.
The photoresist is then imagewise exposed to actinic radiation such as light in the visible, ultraviolet or infrared regions of the spectrum through a mask, or scanned by an electron beam, ion or neutron beam or X-ray radiation. Actinic radiation may be in the form of incoherent light or coherent light, for example, light from a laser. The photoresist is then imagewise developed using a suitable solvent, such as an aqueous alkaline solution, thereby revealing underlying portions of the metal layer.
Subsequently, the revealed underlying portions of the metal layer are removed through well known etching techniques while not removing the portions underlying the remaining photoresist. Suitable etchants non-exclusively include acidic solutions, such as cupric chloride (preferable for etching of nickel) or nitric acid (preferable for etching of tin). Also preferred are ferric 2o chloride or sulfuric peroxide (hydrogen peroxide with sulfuric acid).
During this step, the portions of the conductive layer underlying the etched off portions of the metal layer are revealed. This patterned metal layer defines an excellent quality etch mask for etching the conductive layer with high accuracy and precision.
Next, the revealed underlying portions of the conductive layer are removed by etching while not removing the portions of the conductive layer underlying the non-removed portions of the metal layer. Suitable etchants for removing the conductive layer non-exclusively include alkaline solutions, such as ammonium chloride/ammonium hydroxide. This circuit board may then be rinsed and dried. The result is a printed circuit board having excellent resolution and uniformity, and having excellent performance.
In another preferred embodiment wherein the metal layer comprises nickel, a one pass etching process may be conducted. In this embodiment, after the photoresist has been imaged and developed, each of the revealed portions of the metal layer and the underlying electrically conductive layer may be etched in a cupric chloride etcher. For etching of other metal layers, including Tin, the appropriate etchant is unable to properly etch the underlying conductive foil and a second etching step is still required. This single etching step is preferred for etching lines or spaces of greater than about 3 mils. When a single etching step is used, it may also be necessary to increase the dwell time in the etcher by possibly 10'to 25% depending on the etch system. .Higher spray pressures and temperature may accomplish the same results.
After the circuit lines and spaces are etched through the metal layer and the conductive layer, the remaining photoresist can optionally be removed from the metal layer surface either by stripping with a suitable solvent or by asking by well known asking techniques. The photoresist may also be removed after 2o etching the metal layer, but prior to etching the conductive foil.
In a preferred asking process, plasma is generated in a microwave plasma generator located upstream of a stripping chamber and stripping gases pass through this generator so that reactive species produced from the gases in the plasma enter the stripping chamber. Plasma ions are removed such as by filtering from plasma radicals. The term "radical", as used herein is intended to define uncharged particles such as atoms or molecular fragments which are generated by the upstream plasma generator. The plasma generator may comprise any plasma generator known in the art. Plasma generators which are capable of providing a source of radicals, substantially without ions or electrons, are described, for example, in U.S. patent 5,174,856 and U.S.
patent 5,200,031, the disclosures of which are hereby incorporated by reference.
While any type of conventionally generated plasma may, in general, be used in the practice of the invention, preferably the plasma used is generated by a microwave plasma generator such as, for example, a Model AURA plasma generator commercially available from the GaSonics of San Jose, Cali~
Another upstream plasma generator which is capable of supplying a source of radicals in the substantial absence of electrons and/or ions is commercially available from Applied Materials, Inc. as an Advanced Strip Passivation (ASP) Chamber. Plasma ashers are also commercially available from Mattson Technology of Fremont, California. Ashing may also be performed in an anisotropic method through the use of in situ ashing in an etch chamber such as a TEL DRM 85, available from Tokyo Electron Ltd.
At this point, another insulating substrate may be laminated over the circuit without an additional roughening step and without black oxide treatment of the matte side of the foil. The thin metal layer does not need to be removed after etching and acts as an oxide replacement and supplies enough adhesion to form a multilayer structure. Also, the metal layer is more uniform and reflective than a conductive foil alone and is easily inspected using well known automatic optical inspection (AOI) equipment.
The following non-limiting examples serve to illustrate the invention.
A copper foil is treated on the shiny with copper nodules and a Zn-Cr barrier layer is applied. The matte side is also treated with nodules but is subsequently treated with nickel. The foil is laminated to an epoxy impregnated fiberglass (with the shiny side against the material) to form a substrate. A liquid photoresist is applied to the substrate to a thickness of 12 microns and exposed with UV light through a mask to from an image. The photoresist is developed using potassium carbonate, exposing the nickel surface. The nickel is removed using a cupric chloride etch, exposing the copper underneath. The copper is etched using an ammonia based system to define the traces. The photoresist removed using a sodium hydroxide solution. Holes are punched in the perimeter of the substrate based on the image pattern. These will be used to for registration. The traces are inspected using an automatic optical inspection machine and repaired if necessary (and allowed). The completed substrate with etched traces (core) is laminated between epoxy fiberglass with other cores (if required) with copper foil on the outside. This printed circuit board "blank" is drilled, external circuitry defined, and completed by putting on soldermask and solder. The finished board is tested and then assembled.
Example 1 is repeated except the matte side of the laminate is against the substrate and is treated with Zn-Cr. The shiny side has nodules plated as in Example 1 but is treated with nickel.
Example 2 is repeated except the shiny surface is roughened by microetching prior to the nickel treatment.
Example 2 is repeated except the shiny side is roughened by pumice scrubbing prior to nickel treatment.
Example 1 is repeated except the photoresist is of a permanent nature and is not removed after etching.
to rv n r ~rr~T r c Example 1 is repeated except etching is done in one step with cupric chloride.
Example 1 is repeated except the photoresist is exposed using a direct laser imaging system.
2o EXAMPLE 8 Example 1 is repeated except tin is plated in place of nickel and etching is done using nitric acid.
2s EXAMPLE 9 Copper foils are produced by electrodepositing copper from solution onto a rotating metal drum according to Example I of U.S. patent 3,293,109. Copper is dissolved in sulfuric acid and then electrodeposited in a solution of 70-g/L of copper as copper sulfate, 80-160 g/L of free sulfuric acid, at 40 -60 degrees C. The solution is brought into contact with a rotating metal dram, usually of titanium, which acts as a cathode and receives the copper as it is deposited from solution. The anode is constructed from a lead alloy. A cell voltage of about 5 to 10 volts is applied between the anode and the cathode to cause the copper to be deposited, while oxygen is evolved at the anode.
Copper builds up a continuous film of copper on the drum at a thickness of from about 18 to 70 Vim, which is removed, slit to the required width and finally wound in rolls. The side of the foil next to the drum is smooth (the to "shiny side") while the other side has a relatively rough surface (the "matte side").
Samples of the copper foil are treated on either of the shiny or matte sides to produce surface nodules according to U.S. patent 5,679,230. Other samples of the copper foil are microetched with cupric chloride on either of the shiny or matte sides. Samples of the copper are measured for surface roughness and peel strength. Surface roughness is measured according to IPC-TM-650 Section 2.2.17 and peel strength is measured according to IPC-TM-650 Section 2.4.8 Revision C. The following results are noted:
Copper Treatment Surface Peel Strength*
Foil Roughness Side (Ra in microns) (kg/ linear cm) Shiny None 0.25 <0.18 Shiny Micro-etch 1.20 0.39 Shiny Nodules 3.56 1.52 Matte None 5.08 0.63 Matte Micro-etch 5.72 0.93 3o Matte Nodules 7.60 1.91 * Peel strength was determined by laminating the copper to an epoxy prepreg.
This simulates the peel strength inside the finished circuit board.
While the present invention has been particularly shown and described with reference to preferred embodiments, it will be readily appreciated by those of ordinary skill in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. It is intended that the claims be interpreted to cover the disclosed embodiment, those alternatives 1o which have been discussed above and all equivalents thereto.
Claims (43)
1. A process for producing a printed circuit layer comprising conducting steps (a) and (b) in either order:
a) depositing a first surface of an electrically conductive layer onto a substrate, which electrically conductive layer has a roughened second surface opposite to the first surface;
b) depositing a thin metal layer onto the roughened second surface of the electrically conductive layer, which metal layer comprises a material having a different etch resistance property than that of the electrically conductive layer;
and then c) depositing a photoresist onto the metal layer;
d) imagewise exposing and developing the photoresist, thereby revealing underlying portions of the metal layer;
e) removing the revealed underlying portions of the metal layer, thereby revealing underlying portions of the conductive layer; and f) removing the revealed underlying portions of the conductive layer, to thereby produce a printed circuit layer.
a) depositing a first surface of an electrically conductive layer onto a substrate, which electrically conductive layer has a roughened second surface opposite to the first surface;
b) depositing a thin metal layer onto the roughened second surface of the electrically conductive layer, which metal layer comprises a material having a different etch resistance property than that of the electrically conductive layer;
and then c) depositing a photoresist onto the metal layer;
d) imagewise exposing and developing the photoresist, thereby revealing underlying portions of the metal layer;
e) removing the revealed underlying portions of the metal layer, thereby revealing underlying portions of the conductive layer; and f) removing the revealed underlying portions of the conductive layer, to thereby produce a printed circuit layer.
2. The process of claim 1 wherein step a) is conducted and then step b) is conducted.
3. The process of claim 1 wherein step b) is conducted and then step a) is conducted.
4. The process of claim 1 wherein step a) is conducted by first roughening the second surface of the electrically conductive layer, then treating with a second metal, and then depositing the first surface of the electrically conductive layer onto the substrate.
5. The process of claim 1 wherein step a) is conducted by first roughening the second surface of the electrically conductive layer and then depositing the first surface of the electrically conductive layer onto the substrate.
6. The process of claim 1 wherein step a) is conducted by first depositing the first surface of the electrically conductive layer onto the substrate and then roughening the second surface of the electrically conductive layer.
7. The process of claim 1 wherein the roughened second surface of the electrically conductive layer has an average roughness (Ra) value that ranges from about 1 to about 10 microns.
8. The process of claim 1 wherein the roughened second surface of the electrically conductive layer comprises micro-nodules of a metal or metal alloy on or in the roughened second surface.
9. The process of claim 1 wherein the roughened second surface of the electrically conductive layer is micro-etched.
10. A process for producing a composite which comprises repeating steps a) through f) of claim 1 at least once to thereby produce a plurality of printed circuit layers and then subsequently attaching the printed circuit layers to each other via at least one intermediate stratum thus forming a printed circuit board.
11. The process of claim 1 further comprising the step of removing any remaining photoresist after step (e).
12. The process of claim 1 further comprising the step of removing any remaining photoresist after step (f).
13. The process of claim 1 wherein the electrically conductive layer comprises an electrically conductive foil.
14. The process of claim 1 wherein the metal layer comprises a metal foil.
15. The process of claim 1 wherein the conductive layer comprises a material selected from the group consisting of copper , brass, stainless steel, aluminum, nickel and alloys and combinations thereof.
16. The process of claim 1 wherein the conductive layer is a copper foil.
17. The process of claim 1 wherein the conductive layer is laminated onto the substrate.
18. The process of claim 1 wherein the conductive layer is deposited onto the substrate by electrolytic or electroless deposition.
19. The process of claim 1 wherein the conductive layer is deposited onto the substrate by coating, sputtering, or evaporation.
20. The process of claim 1 wherein the metal layer comprises a material selected from the group consisting of nickel, tin, palladium, platinum, chromium, molybdenum, titanium and alloys and combinations thereof
21. The process of claim 1 wherein the metal layer comprises nickel.
22. The process of claim 1 wherein the metal layer comprises tin.
23. The process of claim 1 wherein the metal layer is laminated onto the conductive layer.
24. The process of claim 1 wherein the metal layer is deposited onto the conductive layer by either electrolytic or electroless deposition techniques.
25. The process of claim 1 wherein the metal layer is deposited onto the conductive layer by coating, sputtering, or evaporation.
26. The process of claim 1 wherein the revealed portions of the metal layer are removed by acid etching.
27. The process of claim 1 wherein the revealed portions of the conductive layer are removed by alkaline etching.
28. The process of claim 1 wherein the revealed portions of the metal layer and the underlying portions of the conductive layer are simultaneously removed by acid etching.
29. The process of claim 1 wherein the substrate comprises a polymer film.
30. The process of claim 1 wherein the substrate comprises a polyimide, polyester, or liquid crystal polymer film.
31. The process of claim 1 wherein the substrate comprises a reinforced polymer.
32. The process of claim 1 wherein the substrate comprises a reinforced polymer which comprises an epoxy, polyimide, cyanate ester, BT-Epoxy or combinations thereof.
33. The process of claim 1 wherein the substrate comprises a reinforced polymer wherein the reinforcement comprises fiberglass or an organic paper.
34. A printed circuit layer produced by the process of conducting steps a) and b) in either order:
a) depositing a first surface of an electrically conductive layer onto a substrate, which electrically conductive layer has a roughened second surface opposite to the first surface;
b) depositing a thin metal layer onto the roughened second surface of the electrically conductive layer, which metal layer comprises a material having a different etch resistance property than that of the electrically conductive layer;
and then c) depositing a photoresist onto the metal layer;
d) imagewise exposing and developing the photoresist, thereby revealing underlying portions of the metal layer;
e) removing the revealed underlying portions of the metal layer, thereby revealing underlying portions of the conductive layer; and f) removing the revealed underlying portions of the conductive layer.
a) depositing a first surface of an electrically conductive layer onto a substrate, which electrically conductive layer has a roughened second surface opposite to the first surface;
b) depositing a thin metal layer onto the roughened second surface of the electrically conductive layer, which metal layer comprises a material having a different etch resistance property than that of the electrically conductive layer;
and then c) depositing a photoresist onto the metal layer;
d) imagewise exposing and developing the photoresist, thereby revealing underlying portions of the metal layer;
e) removing the revealed underlying portions of the metal layer, thereby revealing underlying portions of the conductive layer; and f) removing the revealed underlying portions of the conductive layer.
35. The printed circuit layer of claim 34 wherein the electrically conductive layer comprises an electrically conductive foil
36. The printed circuit layer of claim 34 wherein the metal layer comprises a metal foil.
37. The printed circuit layer of claim 34 wherein the conductive layer comprises a material selected from the group consisting of copper , brass, stainless steel, aluminum, nickel and alloys and combinations thereof .
38. The printed circuit layer of claim 34 wherein the conductive layer comprises a copper foil.
39. The printed circuit layer of claim 34 wherein the metal layer comprises a material selected from the group consisting of nickel, tin, palladium, platinum, chromium, molybdenum, titanium and alloys and combinations thereof .
40. The printed circuit layer of claim 34 wherein the metal layer comprises nickel.
41. The printed circuit layer of claim 34 wherein the metal layer comprises tin.
42. The printed circuit layer of claim 34 wherein the substrate comprises a semiconductor.
43. The printed circuit layer of claim 34 wherein the substrate comprises gallium arsenide, silicon, compositions containing silicon and combinations thereof.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US69761400A | 2000-10-26 | 2000-10-26 | |
| US09/697,614 | 2000-10-26 | ||
| PCT/US2001/032400 WO2002035897A1 (en) | 2000-10-26 | 2001-10-17 | Use of metallic treatment on copper foil to produce fine lines and replace oxide process in printed circuit board production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2426124A1 true CA2426124A1 (en) | 2002-05-02 |
Family
ID=24801816
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002426124A Abandoned CA2426124A1 (en) | 2000-10-26 | 2001-10-17 | Use of metallic treatment on copper foil to produce fine lines and replace oxide process in printed circuit board production |
Country Status (9)
| Country | Link |
|---|---|
| EP (1) | EP1332653A1 (en) |
| JP (1) | JP2004512698A (en) |
| KR (1) | KR100899588B1 (en) |
| CN (1) | CN1299546C (en) |
| AU (1) | AU2002211790A1 (en) |
| CA (1) | CA2426124A1 (en) |
| MY (1) | MY156961A (en) |
| TW (1) | TW592009B (en) |
| WO (1) | WO2002035897A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6703252B2 (en) | 2002-01-31 | 2004-03-09 | Hewlett-Packard Development Company, L.P. | Method of manufacturing an emitter |
| JP2005285946A (en) * | 2004-03-29 | 2005-10-13 | Nippon Mektron Ltd | Manufacturing method of circuit board |
| CN100446640C (en) * | 2004-09-09 | 2008-12-24 | 广东东硕科技有限公司 | An after-treatment fluid for copper surface black oxidation |
| KR101269745B1 (en) | 2008-12-26 | 2013-05-30 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | Rolled copper foil or electrolytic copper foil for electronic circuit, method for forming electronic circuit and printed substrate using the rolled copper foil or electrolytic copper foil |
| US8580390B2 (en) | 2008-12-26 | 2013-11-12 | Jx Nippon Mining & Metals Corporation | Rolled copper foil or electrolytic copper foil for electronic circuit, and method of forming electronic circuit using same |
| WO2010074054A1 (en) * | 2008-12-26 | 2010-07-01 | 日鉱金属株式会社 | Method for forming electronic circuit |
| JP5935163B2 (en) * | 2012-03-30 | 2016-06-15 | ナガセケムテックス株式会社 | Resist adhesion improver and copper wiring manufacturing method |
| JP7055049B2 (en) * | 2017-03-31 | 2022-04-15 | Jx金属株式会社 | Surface-treated copper foil and laminated boards using it, copper foil with carriers, printed wiring boards, electronic devices, and methods for manufacturing printed wiring boards. |
| CN109693080B (en) * | 2018-12-24 | 2020-12-29 | 江苏弘信华印电路科技有限公司 | Burr-free milling process for rigid-flex printed circuit board |
| TWI781818B (en) | 2021-11-05 | 2022-10-21 | 長春石油化學股份有限公司 | Surface-treated copper foil and copper clad laminate |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2009018B1 (en) * | 1970-02-26 | 1971-04-15 | Krause W | Process for the production of printed circuit boards |
| DE2511189C2 (en) * | 1975-03-14 | 1976-10-21 | Heinz Bungard | METHOD FOR MANUFACTURING SURFACE-CLAD BASE MATERIAL FOR MANUFACTURING PRINTED CIRCUITS |
| US4756795A (en) * | 1986-10-31 | 1988-07-12 | International Business Machines Corporation | Raw card fabrication process with nickel overplate |
| US4971894A (en) * | 1989-02-13 | 1990-11-20 | International Business Machines Corporation | Method and structure for preventing wet etchant penetration at the interface between a resist mask and an underlying metal layer |
| JPH0728115B2 (en) * | 1989-03-17 | 1995-03-29 | 株式会社日立製作所 | Printed board and manufacturing method thereof |
| JPH0787270B2 (en) * | 1992-02-19 | 1995-09-20 | 日鉱グールド・フォイル株式会社 | Copper foil for printed circuit and manufacturing method thereof |
| JPH0681172A (en) * | 1992-09-01 | 1994-03-22 | Hitachi Cable Ltd | Formation of fine pattern |
| JP2762386B2 (en) * | 1993-03-19 | 1998-06-04 | 三井金属鉱業株式会社 | Copper-clad laminates and printed wiring boards |
| JPH08222857A (en) * | 1995-02-16 | 1996-08-30 | Mitsui Mining & Smelting Co Ltd | Copper foil and high-density multilayer printed circuit board using the copper foil for inner layer circuit |
| US6132887A (en) * | 1995-06-16 | 2000-10-17 | Gould Electronics Inc. | High fatigue ductility electrodeposited copper foil |
| US5679230A (en) * | 1995-08-21 | 1997-10-21 | Oak-Mitsui, Inc. | Copper foil for printed circuit boards |
| US6117300A (en) * | 1996-05-01 | 2000-09-12 | Honeywell International Inc. | Method for forming conductive traces and printed circuits made thereby |
| US5895581A (en) * | 1997-04-03 | 1999-04-20 | J.G. Systems Inc. | Laser imaging of printed circuit patterns without using phototools |
| US5989727A (en) * | 1998-03-04 | 1999-11-23 | Circuit Foil U.S.A., Inc. | Electrolytic copper foil having a modified shiny side |
| US6117250A (en) * | 1999-02-25 | 2000-09-12 | Morton International Inc. | Thiazole and thiocarbamide based chemicals for use with oxidative etchant solutions |
-
2001
- 2001-10-17 JP JP2002538728A patent/JP2004512698A/en active Pending
- 2001-10-17 CN CNB018213170A patent/CN1299546C/en not_active Expired - Fee Related
- 2001-10-17 EP EP01979868A patent/EP1332653A1/en not_active Withdrawn
- 2001-10-17 WO PCT/US2001/032400 patent/WO2002035897A1/en not_active Ceased
- 2001-10-17 AU AU2002211790A patent/AU2002211790A1/en not_active Abandoned
- 2001-10-17 KR KR1020037005804A patent/KR100899588B1/en not_active Expired - Fee Related
- 2001-10-17 CA CA002426124A patent/CA2426124A1/en not_active Abandoned
- 2001-10-25 MY MYPI20014947A patent/MY156961A/en unknown
- 2001-10-25 TW TW090126408A patent/TW592009B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002035897A1 (en) | 2002-05-02 |
| JP2004512698A (en) | 2004-04-22 |
| KR100899588B1 (en) | 2009-05-27 |
| TW592009B (en) | 2004-06-11 |
| AU2002211790A1 (en) | 2002-05-06 |
| KR20030044046A (en) | 2003-06-02 |
| MY156961A (en) | 2016-04-15 |
| CN1299546C (en) | 2007-02-07 |
| EP1332653A1 (en) | 2003-08-06 |
| CN1483303A (en) | 2004-03-17 |
| WO2002035897A9 (en) | 2003-02-20 |
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