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CA2374498A1 - Planarisation de surface de minces couches de silicium, pendant et apres traitement au moyen d'un procede de solidification laterale sequentielle - Google Patents

Planarisation de surface de minces couches de silicium, pendant et apres traitement au moyen d'un procede de solidification laterale sequentielle Download PDF

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Publication number
CA2374498A1
CA2374498A1 CA002374498A CA2374498A CA2374498A1 CA 2374498 A1 CA2374498 A1 CA 2374498A1 CA 002374498 A CA002374498 A CA 002374498A CA 2374498 A CA2374498 A CA 2374498A CA 2374498 A1 CA2374498 A1 CA 2374498A1
Authority
CA
Canada
Prior art keywords
laser pulses
thin film
polycrystalline
single crystal
crystal thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002374498A
Other languages
English (en)
Inventor
Mark A. Crowder
Robert S. Sposili
James S. Im
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Columbia University in the City of New York
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2374498A1 publication Critical patent/CA2374498A1/fr
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/3568—Modifying rugosity
    • B23K26/3576—Diminishing rugosity, e.g. grinding; Polishing; Smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

L'invention concerne des systèmes et procédés de réduction de la rugosité d'une couche mince mono- ou polycristalline produite par le procédé de solidification latérale séquentielle. Dans un mode de réalisation, le système comprend un laser à excimères (110) destiné à produire plusieurs impulsions laser de fluence déterminée, un modulateur de densité d'énergie (120), destiné à réguler la fluence modulante des impulsion du laser à excimères, de façon que cette fluence se situe en dessous de celle requise pour faire totalement fondre la couche mince, un homogénéiseur de faisceau (144) destiné à homogénéiser les impulsions laser modulées dans un plan déterminé, un support d'échantillon (170) destiné à recevoir les impulsions laser homogénéisées de manière à exécuter la fusion de portions de la couche mince mono- ou polycristalline correspondant aux impulsions laser, des moyens de translation destinés à déplacer de manière régulée une position relative du support d'échantillon (170) par rapport aux impulsions laser, ainsi qu'un ordinateur (110) servant à coordonner la production d'impulsions laser avec la modulation de fluence, par rapport aux positions correspondantes du support d'échantillon (170), de manière à traiter la couche mince mono- ou polycristalline, par translation séquentielle du support d'échantillon (170) par rapport aux impulsions laser.
CA002374498A 2000-03-21 2000-03-21 Planarisation de surface de minces couches de silicium, pendant et apres traitement au moyen d'un procede de solidification laterale sequentielle Abandoned CA2374498A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2000/007479 WO2001071791A1 (fr) 2000-03-21 2000-03-21 Planarisation de surface de minces couches de silicium, pendant et apres traitement au moyen d'un procede de solidification laterale sequentielle

Publications (1)

Publication Number Publication Date
CA2374498A1 true CA2374498A1 (fr) 2001-09-27

Family

ID=21741175

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002374498A Abandoned CA2374498A1 (fr) 2000-03-21 2000-03-21 Planarisation de surface de minces couches de silicium, pendant et apres traitement au moyen d'un procede de solidification laterale sequentielle

Country Status (10)

Country Link
EP (1) EP1196947A4 (fr)
JP (1) JP4220156B2 (fr)
KR (1) KR100672909B1 (fr)
CN (1) CN1186802C (fr)
AU (1) AU2000240180A1 (fr)
CA (1) CA2374498A1 (fr)
HK (1) HK1046469A1 (fr)
MX (1) MXPA01011852A (fr)
TW (1) TW499717B (fr)
WO (1) WO2001071791A1 (fr)

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US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
KR100333275B1 (ko) * 1999-05-20 2002-04-24 구본준, 론 위라하디락사 액정표시장치의 ｔｆｔ 및 그 제조방법
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US6860939B2 (en) 2002-04-23 2005-03-01 Sharp Laboratories Of America, Inc. Semiconductor crystal-structure-processed mechanical devices, and methods and systems for making
US7156916B2 (en) 2002-04-23 2007-01-02 Sharp Laboratories Of America, Inc. Monolithic integrated crystal-structure-processed mechanical, and combined mechanical and electrical devices, and methods and systems for making
US7128783B2 (en) 2002-04-23 2006-10-31 Sharp Laboratories Of America, Inc. Thin-film crystal-structure-processed mechanical devices, and methods and systems for making
US7135070B2 (en) 2002-04-23 2006-11-14 Sharp Laboratories Of America, Inc. Monolithic stacked/layered crystal-structure-processed mechanical, and combined mechanical and electrical, devices and methods and systems for making
CN100459041C (zh) * 2002-08-19 2009-02-04 纽约市哥伦比亚大学托管会 激光结晶处理薄膜样品以最小化边缘区域的方法和系统
US7718517B2 (en) 2002-08-19 2010-05-18 Im James S Single-shot semiconductor processing system and method having various irradiation patterns
WO2005029547A2 (fr) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Systeme et procede permettant d'augmenter la largeur de grains polycristallins produits par solidification laterale sequentielle, en utilisant un motif de masquage modifie
WO2005029551A2 (fr) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Procedes et systemes de traitement par cristallisation au laser de partie de films sur substrats utilisant un faisceau lineaire, et structure de ces parties
US7318866B2 (en) 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
US7364952B2 (en) 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
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WO2005034193A2 (fr) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Irradiation a simple balayage de cristallisation de films minces
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JP2007165716A (ja) 2005-12-15 2007-06-28 Advanced Lcd Technologies Development Center Co Ltd レーザー結晶化装置及び結晶化方法
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WO2009039482A1 (fr) 2007-09-21 2009-03-26 The Trustees Of Columbia University In The City Of New York Collectes d'îles de semi-conducteurs cristallisés latéralement à utiliser dans des transistors à couche mince
CN101919058B (zh) 2007-11-21 2014-01-01 纽约市哥伦比亚大学理事会 用于制备外延纹理厚膜的系统和方法
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
CN103745925A (zh) * 2013-11-14 2014-04-23 上海和辉光电有限公司 一种平坦化多晶硅薄膜的制造方法
US20160074968A1 (en) * 2014-09-11 2016-03-17 Suss Microtec Photonic Systems Inc. Laser etching system including mask reticle for multi-depth etching
TWI577488B (zh) * 2014-11-17 2017-04-11 財團法人工業技術研究院 表面加工方法
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CN106298451A (zh) * 2016-08-18 2017-01-04 昆山国显光电有限公司 激光晶化方法及装置
WO2019146021A1 (fr) * 2018-01-24 2019-08-01 ギガフォトン株式会社 Procédé de traitement au laser et système de traitement au laser

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US6368945B1 (en) * 2000-03-16 2002-04-09 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification

Also Published As

Publication number Publication date
HK1046469A1 (zh) 2003-01-10
KR100672909B1 (ko) 2007-01-22
WO2001071791A1 (fr) 2001-09-27
CN1186802C (zh) 2005-01-26
MXPA01011852A (es) 2002-05-06
EP1196947A1 (fr) 2002-04-17
JP4220156B2 (ja) 2009-02-04
EP1196947A4 (fr) 2003-08-13
CN1363117A (zh) 2002-08-07
AU2000240180A1 (en) 2001-10-03
TW499717B (en) 2002-08-21
KR20020002466A (ko) 2002-01-09
JP2003528463A (ja) 2003-09-24

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US8278659B2 (en) Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon
US6368945B1 (en) Method and system for providing a continuous motion sequential lateral solidification
CA2382662C (fr) Systemes et procedes utilisant une solidification laterale sequentielle destines a la production de couches minces de silicium mono- ou polycristallin a basses temperatures
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