CA2056609A1 - Procedes de fabrication de minces pellicules de cuinse2 et de piles solaires a l'aide de ces pellicules - Google Patents
Procedes de fabrication de minces pellicules de cuinse2 et de piles solaires a l'aide de ces pelliculesInfo
- Publication number
- CA2056609A1 CA2056609A1 CA 2056609 CA2056609A CA2056609A1 CA 2056609 A1 CA2056609 A1 CA 2056609A1 CA 2056609 CA2056609 CA 2056609 CA 2056609 A CA2056609 A CA 2056609A CA 2056609 A1 CA2056609 A1 CA 2056609A1
- Authority
- CA
- Canada
- Prior art keywords
- electrolyte
- film
- substrate
- cuinse2
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims abstract description 84
- 239000010409 thin film Substances 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000010408 film Substances 0.000 claims abstract description 86
- 239000003792 electrolyte Substances 0.000 claims abstract description 59
- 238000000151 deposition Methods 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 150000001875 compounds Chemical class 0.000 claims abstract description 38
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052951 chalcopyrite Inorganic materials 0.000 claims abstract description 31
- 239000000203 mixture Substances 0.000 claims abstract description 18
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 12
- 239000011521 glass Substances 0.000 claims abstract description 10
- 230000008021 deposition Effects 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 19
- 229910018162 SeO2 Inorganic materials 0.000 claims description 14
- JPJALAQPGMAKDF-UHFFFAOYSA-N selenium dioxide Chemical compound O=[Se]=O JPJALAQPGMAKDF-UHFFFAOYSA-N 0.000 claims description 14
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 10
- 239000011733 molybdenum Substances 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 7
- 229910000337 indium(III) sulfate Inorganic materials 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 239000000470 constituent Substances 0.000 claims description 5
- -1 CuC1 Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910001868 water Inorganic materials 0.000 claims description 4
- 229910000366 copper(II) sulfate Inorganic materials 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 claims description 2
- 235000011149 sulphuric acid Nutrition 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 230000001276 controlling effect Effects 0.000 claims 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 1
- 229910017604 nitric acid Inorganic materials 0.000 claims 1
- 238000009826 distribution Methods 0.000 abstract description 2
- 239000010949 copper Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- 238000004070 electrodeposition Methods 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229920006362 Teflon® Polymers 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000008139 complexing agent Substances 0.000 description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 239000008236 heating water Substances 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA 2056609 CA2056609A1 (fr) | 1991-11-28 | 1991-11-28 | Procedes de fabrication de minces pellicules de cuinse2 et de piles solaires a l'aide de ces pellicules |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA 2056609 CA2056609A1 (fr) | 1991-11-28 | 1991-11-28 | Procedes de fabrication de minces pellicules de cuinse2 et de piles solaires a l'aide de ces pellicules |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2056609A1 true CA2056609A1 (fr) | 1993-05-29 |
Family
ID=4148837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA 2056609 Abandoned CA2056609A1 (fr) | 1991-11-28 | 1991-11-28 | Procedes de fabrication de minces pellicules de cuinse2 et de piles solaires a l'aide de ces pellicules |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA2056609A1 (fr) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2370282A (en) * | 2000-12-16 | 2002-06-26 | Univ Northumbria Newcastle | Anodic process for producing chalcopyrite compounds |
| WO2011086327A1 (fr) * | 2010-01-15 | 2011-07-21 | Nexcis | Fabrication d'une structure multicouche pour des applications photovoltaïques à partir de conditions d'électrolyse perfectionnées |
| AT515522A4 (de) * | 2014-08-05 | 2015-10-15 | Happy Plating Gmbh | Verfahren zur elektrochemischen abscheidung halbleitender materialien und elektrolyten hierzu |
| CN114250473A (zh) * | 2022-03-01 | 2022-03-29 | 青岛理工大学 | 氧化铁基z型异质结复合光阳极膜及其制备方法和应用 |
-
1991
- 1991-11-28 CA CA 2056609 patent/CA2056609A1/fr not_active Abandoned
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2370282A (en) * | 2000-12-16 | 2002-06-26 | Univ Northumbria Newcastle | Anodic process for producing chalcopyrite compounds |
| GB2370282B (en) * | 2000-12-16 | 2003-03-26 | Univ Northumbria Newcastle | Rapid anodic process for producing chalcopyrite compounds |
| WO2011086327A1 (fr) * | 2010-01-15 | 2011-07-21 | Nexcis | Fabrication d'une structure multicouche pour des applications photovoltaïques à partir de conditions d'électrolyse perfectionnées |
| FR2955428A1 (fr) * | 2010-01-15 | 2011-07-22 | Nexcis | Fabrication d'une structure multicouche pour des applications photovoltaiques a partir de conditions d'electrolyse perfectionnees. |
| AT515522A4 (de) * | 2014-08-05 | 2015-10-15 | Happy Plating Gmbh | Verfahren zur elektrochemischen abscheidung halbleitender materialien und elektrolyten hierzu |
| CN114250473A (zh) * | 2022-03-01 | 2022-03-29 | 青岛理工大学 | 氧化铁基z型异质结复合光阳极膜及其制备方法和应用 |
| CN114250473B (zh) * | 2022-03-01 | 2022-06-07 | 青岛理工大学 | 氧化铁基z型异质结复合光阳极膜及其制备方法和应用 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4581108A (en) | Process of forming a compound semiconductive material | |
| US4950615A (en) | Method and making group IIB metal - telluride films and solar cells | |
| Basol | Electrodeposited CdTe and HgCdTe solar cells | |
| US6258620B1 (en) | Method of manufacturing CIGS photovoltaic devices | |
| US4642140A (en) | Process for producing chalcogenide semiconductors | |
| US20110108115A1 (en) | Forming a Photovoltaic Device | |
| Basol et al. | Low‐cost technique for preparing Cd1− x Zn x Te films and solar cells | |
| Basol et al. | Mercury cadmium telluride solar cell with 10. 6% efficiency | |
| WO1990015445A1 (fr) | Pellicules semiconductrices des groupes i-iii-vi2 utiles dans des cellules solaires | |
| EP0152197B1 (fr) | Dispositifs photovoltaiques à hétérojonction à couches minces qui utilisent le Hg1-x Cdx Te riche en Cd et procédé pour l'électrodéposition de ces couches | |
| Haneman | Properties and applications of copper indium diselenide | |
| Sahu et al. | Electrodeposition of CuInSe2 thin films from aqueous solution | |
| Kampmann et al. | Junction Formation Studies of One‐Step Electrodeposited CuInSe2 on CdS | |
| Dagan et al. | Ternary chalcogenide-based photoelectrochemical cells III. n-CuIn5S8/aqueous polysulfide | |
| US8409418B2 (en) | Enhanced plating chemistries and methods for preparation of group IBIIIAVIA thin film solar cell absorbers | |
| Saber et al. | Annealing study of electrodeposited CuInSe2 and CuInS2 thin films | |
| JP3589380B2 (ja) | 半導体薄膜の製造方法および薄膜太陽電池の製造方法 | |
| Neumann‐Spallart et al. | Photoelectrochemical properties of semiconducting cadmium mercury telluride thin films with bandgaps between 1.47 and 1.08 eV | |
| CN102859046A (zh) | Ib/iiia/via族薄膜太阳能吸收器的镀覆化学物 | |
| DE3586847T2 (de) | Herstellungsverfahren eines zusammengesetzten halbleiters. | |
| CA2056609A1 (fr) | Procedes de fabrication de minces pellicules de cuinse2 et de piles solaires a l'aide de ces pellicules | |
| CA2284826C (fr) | Preparation de couches d'un precurseur constitue de diseleniure de cuivre-indium-gallium par electrodeposition pour fabriquer des photopiles a haut rendement | |
| Rastogi et al. | A New Electrochemical Selenization Technique for Preparation of Metal‐Selenide Semiconductor Thin Films | |
| Benamar et al. | Electrodeposition and characterization of CdSex-Te1-x semiconducting thin films | |
| Muftah et al. | Electrodeposited CdTe Thin Film Solar Cells: Chloride Treatment and Improved Efficiency |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| FZDE | Dead |