CA1181361A - Ionization enhanced chemical process - Google Patents

Abstract

ABSTRACT OF DISCLOSURE

This invention relates to a new manner of carrying out chemical reactions by injection of selected forms of energy into the reaction zone by novel means. By applying this principal, many new processes result with application in a large number of different industries. The new process is generally capable of operation at room temperatures, which has advantages in the creation of certain sensitive products including uniformly doped semi-conductors, new catalysts, pure gases, high purity materials of any kind, controlled coatings, new polymers, combustion enhancement, difficult separation, petroleum refinery operations, and carrying out any reaction in which the injection of specific energy types is helpful.

Description

This invention relate~ to a new manner of carrying out chemical reactions by inception of selected forms of energy into the reaction zone by novel means. By applying this prin-cipal, many new processes result with application in a large n~ber of different industries. The new process is generally capable of operation at room temperatures, which has advan- ~
tages in the creation of certain sensitive products includ-ing uniformly doped semi-c~nductors, new catalysts, pure gases, high purity materials of any kind, controlled coat-in~s, new polymers, combustion enhancement, difficult separa-tion, petroleum refinery operations, and carrying out any re action in which the injection of specific energy type~ is helpful.
A particular instance is a method for producing coat-inys of selected metals, non-metals and other molecules.
Multiple layer coatings may be formed with virtually any com-bination of materials. The purity of th~ material of each layer may be as high as 100% and the thickness ~f each layer can be controlled to a single atomic or molecular layer.
Heretofore, it has been impossible to produce bodies or deposits of metals, non-metals, crystals and substances generally, and achieve a purity of approximately 100%, par-ticularly when the processes involved are carried out at ambient kemperatures. Similarly, it has been ound to be impossible to dope said bodieæ at ambient temperatures since doping has required diffusion, and high temperatures have ,$ ~

been needQd to permit diffusion of the dopant into the body.
For instance, ultra pure silicon must be heated to dope it by diffusion methods. The heating, however, for this pur-pose, causes imperfections in the crystalline silicon caus-ing large numbers of rejects.
An object of the invention is a new and improved means for carrying out a chemical process.
A further object-envisions new and improved chemical processes involving injection of selected energy forms by novel means.
Another object is new and improved products created by such a process.
Still further objects will be appreciated from the fol-lowing detailed description of the invention.
The present invention comprises forming a metastable re-agent gas, intermingling said reagent gas with a sample gas causing the latter to be energized by neutral atoms of mole-cules in an excited state, selectively ionizing said energized sample gas by introducing additional energy in an amount cor-responding to the difference between that of the excited and ionized state of said sample gas, imposing an electrical or magnetic force on said ionsto remove them from the gas stream as stable--atoms, in a-se~regated zone, such as by-depositing them on a substrate or in a container separate from the main stream of gas. The additional energy can be-added-by various means, such as a light source of the laser type, or by hollow electrodes, magnetic or electric charges, or the like~
The invention has a myriad of uses for productsor pro-cesses in many different industries, many of which are dis-cussed in this Application.
Referring to the invention in greater detail, it em-bodies the following principles: , 1. It is possible to generate large numbers (Ca 108 - 1014/Sec) of so-called metastable atoms and/or molecules by passing neutral or ionized ground state atoms or molecules in the gas phase through a 200 to 300 volt potential. Optimum metastable production usually occurs when the reagent gas (i.e. the atoms or molecules from which the metastable atoms or molecules are formed) is at low pressure such as 1 to 5 torr. An atom, molecule or ion is said to be metastable when it possesses excess energy over its ground energy state and when it tends to be slow to dissipate its excess energy by radiative processes. The excess energy possessed by a meta-stable is usually transferred in part or completely during inelastic collisions.

2. Due to the relatively long life time of metastables, they can be easily brought into contact with metal, non-metal or moleculars in the gas phase so that through inelastic col-lisions the excess energy of the metastable reagent gas is transferred to them. The metal, non-metal and~or molecules thus energized may become: a neutral atom or molecule in the excited state or an ionized species.

3. Neutral atoms or molecules in excited states (i~e.
with excess energy) may be fur~her excited to the point where an electron is ejected tthus forming the atomic or molecular ion) by supplying more energy in an amount cor-responding to the energy difference between the ionized and excited states of the species of interest. It is often the case that the energy difference is small and can be sup-plied by a light source (such as a dye laser etc.) that emits in the ultra-violet and visible portion of the electro-magnetic spectrum. ~hat i5, by irradiating a collection a neutral atoms or molecules in the same excited state ~i.e.
the same amount of excess energy) with monochromatic radi-ation whose enPrgy corresponds exactly to the energy dif~
ference between the excited and ionized states, only those atoms or molecules will be ionized.
Because of the uniqueness oE the energy difference between an excited state of a particular atom or molecule and its ionized state, nearly absolute selectivity is achieved.
It is often the ca~e that the energy difference referred to above can be altered by using a different reagent gas because each reagent gas is composed of metastable atoms or molecules whose energy is different from one reagent gas to another.
For example, the characteristic meta,stable energy for some selected reagent gases is as follows: helium (23S) 19.7e~, argon (33Po 2~ 11.7 eV and nitrogen t3~ +u) 6.1 eV. An added degree of selectivity can be attained by using a re-agent gas whose metastable energy differs fro~the ionizationenergy of ~h~ metal, non-metal or molecule of interest by an amount such that ionization of any oth~r material h~t that of interest is not possible!

4. Ions thus produced are charged particles (by defini-tion) and therefore can be caused to move in a particular de-sired direction and accumulate, as a thin, uniform film, at a particular desired location by imposition of an electric or magnetic field. Furthermoxe by proper selection of the shape of the imposed field, mass discrimination can be achieved although it is rarely necessary with this technique.
In summary, the invention is described as follows:
a flow of argon (2000 u moles/run) i~ established in a soft Yacuum (1-5 torr). The argon ~PO 2)metastable states 11.7 eV
is generated in l~rge quantities 108 - 1013/sec. as the argon is passed throl7gh two annular electrodes across which 200 -300 Vdc is applied. These argon metastable at~ms referred to as the reagent gas are brought into contact with a molecule nf interest referred to as the sample gas ti.e. W(C0)6, Ni(C0)6 silanes~, perfluoro butan~, etc~ where the argon metastable reagent gas transfers its excess energy to the sample gas.
Many complex reactions proceed in such an energy rich en vironment, however, a dominant one is the formation of the metal, non-metal or mclecule in a neutral, high energy state and still in the ga~ phase. The output from a nitrogen-laser-pumped pulsed tunable dye laser/set to the wavelength cor-re~ponding to the exact energy necessary to cause ioni zation of the sample gas given the energy of its neutral high energy state. The configuration of the cavity or container in which ., . . , ~

the above occurs is such that an electric or magnetic field can be applied so as to couple thP site of formation of the ions of intere~t to the site of their deposition without entraining other non-ionic products present in the reac-tion zone. The layers thus deposited on a suitable target may be controlled in thickness to an atomic or molecular layer by controling the rate at which sample ions are formed. Layers of known uniform thickness of metals, non-metals and molecules can be deposited-in-any-or~er-thus giving "sandwich" type layers.
AltPrnatively, two or more metals could be deposited simultaneously thus forming an "alloy" like layer. Or other molPcules such as monomers can be deposited as ions on a sur-face such that polymerization occurs. And certain chemical reaction knownto proceed by way of an ion can be caused at a specific location and at a specific controlled rate.
The invention may be more readily understood by re-ferring to the followiny detailed examples:
Five éxa~ples of the foregoing process will be pre-sented. The first will deal with the non-metal silicon and the second with the metal tungsten.

Example 1 By passing a 2000 micromole/minute flowinq stream of Helium gas past electrodes across which 200 vdc are imposed, from 10~ to 10 metastable Helium atoms (in the 23S state) are formed. If a vol~tilesilicon compound such as silane is mixed into the stream of Helium metastable atoms, by a collisional process, the metastable energy is transferred to the silane forming neutral silicon atoms in the excited state. The difference in energy between the excited neutral atom and the ionic form of the atom is 3.18 eV which is equivalent to the energy of light whose wave length is 390.53 nanometer~ (nm~. Thus if light whose wavelength is 390.53 nnl is incident on the neutral excited silicon atoms, they will absorb the incident light and in doing so become ionized. By imposing either an electric or magnetic field gr~dient between the ions and a suitable target, the ions and only the ions, will migrate to the target where they take on an electron and are deposited uniformly as ground state neutral atoms.

Exam~le 2 As for the example dealing with a metal, tungsten will be considered. The same procedure (as described above in the case of silicon) is used for the metal tungsten. The volatile tungsten compound used is tungsten hexacarbonyl W~CO)6~ Neutral excited tungsten atoms are formed in a man-ner similar to that for silicon. The difference in enexgy hetween the neutral excited tungsten atom and its ionic form is 2.54 eV which is equivalent to the eneryy of light whose wavelength is 489.73 nm~ Thus, if light whose wavelength is 489.73 nm is incident on the neutral excited tungsten atoms, they will absorb the incident light and in doing so become ion-ized. As before, an electric or magnetic field gradient will cause the migration of the ions to the target where they pick up an electron and are deposited uniformly on the target sur~

__ .,, _ _... . . ... .. . . . ..

face as neutral tungsten atoms in the ground state. Table 1 summarizes the energy relationship described or referred to above.
(Any suitable target may be used, whether it be metal, non-mPtal, inorganic or organic substances. A suit-able-example-target---for-~xamples--l an-d--2 is-a quartz pla~e).

Exam~ 3 P-N JUNCTION -- PHOTOVOLTAIC CELL

The following example is a principle application of the inv~ntion.
Photo~oltaic cells used as a means of generating elec-tric power have come under intPnse investigation in xecent years due to the nece~sity of generating electric power in re te places such as space. In the past, use of photovol-taic cell for power production has been very expensive (i.e.
up to $175,000/kilowatt). The high CGSt cited was he re-sult of the necessity of employing very complicated and cost-ly fabrication procedures so.that the..de.vice could.be made at alll Even so, the rejection rate was as great as 90%. With interest in photovoltaic cells expanding to include commer-cial use to provide a power source alternative to fossil fu-els, any reduction in cost of producing photovoltaic cell would further aurrent goals.
The example discussed below will consider a photovolta-ic cell based on a silicon matrix where the P layer is sili-con doped with antimony and arsenic or phosphorous. The P and N layers are formed so that a sandwich configura~ion results.

U J
~ ~ ~ i O ~ ~

~C ~ ~ l ~ ~1 I .

~D U~ Ir) O~ In I_ o o o :n u~ n cn O ~ ~
_~
O~ ~0 ~ CO U~
~D 9 U~ O O r~
o u~ O s~ ~ a~

r ~t, o ~ N
~ 3 ~ 3 a)~ o q) o o ~rd ~ X o~a _t ~ Ql a3 N U 110 N
IJ ~
~ ,t ~¦at 3 ~t ut O ~ ~ O
~; ~ :~ ~

It will be appreciated that the application of the principle of the invention will produce P-N junction devices (photovoltaic cells, etc.~ in a manner that: ~
1) is carried out at ambient troo~ temperatures and thus eliminates the use of the high temperature induction furnaces presently required by current processes, 2 ) the doping process i5 carried out continuously and in a precisely controlled mann~r at ambient temperatures resulting in concentrations oE do-pant at the bottom of the silicon layer that is equal to that found at any other depth in the layer, and thus eliminates the normal non-linear diffusion of the dopant as a function of depth that alway~ xesult~ from the high-temperature diffusion proces~ currently used, 3) permits the formation of a P-N junction device with layer thicknPss, dopant type and dopant con-centration controlled remotely so that the 5ub-strate, (the surface to which the photovoltaic cell is connected) once mounted, is not handled or otherwise physically removed from the apparatus employed for the deposition of the P-N junc~tion material.

In this exam~le, for illustrati~e purposes, the N dopant will be boron ~ld the dopants ~will be antimony ~nd phosphorous. Because these dopants were selected it is not implied that other dopants could not be em-ployed in exactly the same manner, that is, by the application of the principle of the invention. This example differs from the previous one as follows: in the previous example the manner in which a metal or non-metal could be purified to very hiyh levels of puri~y was presented; however in the example be-low, the means by which a controlled amount of a specific impurity and no other can be incorporated into a high purity matrix where the amount of specific impurity may be very small, i5 discussed,(down to parts per 100 trillion).
The source o~ silicon is picked from the wide variety and large number of volatile silicon compounds such as tetra-methyl silicon~ The volatile compounds are selected because ~hey have high vapor pressures or readily form gases at room temperature An amount of the silicon compound equivalent to one or two grams of silicon is placed in a closed vessel that can:
13 have its temperature controlled to within + 0.01C
from 100C to -200C, 2) be connected to a manifold through a metering valve.
The valve is initially closed so that the gas-solid in the vessel can be brvught into thermal equilibrium with the vessel. The temperature controller is adjusted to the tem-perature that will result in the desired pressure for the gaseous silicon compound, tetra methyl silicon (TMS), for ex-ample 27C will re~ult in a gaseous TMS pressure of approxi-mately 150 r~m of Hg.
The source of boron is picked from ~ large number of ~oron containing compounds, such as the hydrides and diborane, that are volatile The volatile compounds are selected because they have high ~apor pressures or readily form gases at room temperature. An amount of diborane equivalent to one or two ~__, . , , . , . _ .. .. _ ._ _,, ...... ,, . _, . . . .. .

3~

milligrams of boron is placed in a closed vessel with charac-teristics similar to the vessel containing the silicon com-pound; and the boron containing vessel is connected~to the same manifold so that the two gases can be mixed as required.
Because the amsunt of dopant is usually very small, parts per billion or less, relative to the silicon, the low temperatur~
capabilities of the boron containing vessel must be employed.
That i5 by maintaining the temperature at approximately 165C
a vapor pressure of approximately 1 to 2 mm of Hg results.
Therefore, if the two gases, TMS and diborane were allowed to mix freely in the manifold at their respective vapor pres-sures, the diborane would be approximately l parts per tril-lion with respect to TMS. In order to reduce the concentra-tion of diborane further it is useful to use the metering valves that separate each vessel from the manifold and apply in a soft vacuum to the manifold. In this way arbitrarily low concentrations of borane can be achieved in the flowing mix-ture of the two gases. The soft vacuum applied to the mani-fold provides the driving force or means to transfer the gas mixtures to other locations within the apparatus.
As above ~i.e. in the previous example) a g~s such as helium is selected for the purpose of forming a reactant gas.
It will ~e recalled that by passing approximately 2 mols/
minute of helium through a conduit such as glass tubing that at some convenient p~int has two annular electrodes around the outer surface of the conduit separated by 3 to 5 centi-meter with 200 Vdc imposed across them, energetic or excited neutral atoms of helium will be formed. These neutral excited atoms are referred to as the metastable gas or reactant gas.

, _ .. , _ __ .. , . .. _ . , , . . .. . . ._ ___ .. . , . _ The manifold into which the TMS and borane gases are allowed to flow is connected to the glass tubing or conduit in which the metastable gas is formed in such a way~that the TMS and borane gas mixture flows into the metastable gas where energy is transferred from the metastable atoms ~neutral excited atoms) to TMS and diborane. This configuration is selected (instead of the one in which both the TMS and di-borane gas mixture and the helium mix prior to the formation of the reactant or metastable gas) so that silicon and boron ions are not fsrmed prior to irradiation with light whose wavPlength(s) correspond(s) to energy(ies) equal to that (those) required to ionize silicon and boron from their neutral excited states. 'rhe reason being that by avoiding indiscriminat~ ioni-zation very high purity levels can be achieved as well as high coating rates. It is ~oted, however, that under some circum-stances it might be useful to form ions of either the dopant or silicon ~y mixing with the helium prior to the formation of the metastable gas - namely when; the need or desire to eliminate the use of one light source such as a laser exists, and/or lower standards of purity can be tolerated but higher coating rates necessary. However, in this example that case shall not be considered in detail. In either case though, when energy is transferred from the metastable gas to the TMS
and diborane, the excited neutral silicon and boron atoms are formed. Table 2 summarizes the energy content of the most prominent excited neutral states and ionized states of sili-con, boxon, phosphorous, antimony and arsenic. Included in the table are the various energy differences between the ex~
cited neutral and ionized states of the elements mentioned.
At this point r the gas containing the neutral excited ~ 3~

silicon and boron can be passed through an electric and/or magnctic field in order to remove unwanted ions that may be formed during energy transfer from the metastable gas, such as impurities whose ionization energy is less than silicon and boron. This procedure results in very hiyh purity of the gas stream. In fact in order to achieve the highest purity a ~as such as helium is selected because of its large ener-gy content in the metastable state approximately 21 eV, thus causing efficient ionization of impurities (with low ioniza-tion energy aDd inefficient ioni~ation of atoms or molecules with high ionization energies.) The gas containing the silicon and boron atoms in their excited neutral states, is then irradiated by intense light from a source such as a hollow cathode lamp or a laser (tunable dye type for example~. The light should be mono-chromatic (or nearly so) with a wavelength of 3747.774 Angstroms (A) or 3.818 electron volts (eV). Either a single pass or mul-tiple pass configuration of the light path through the gas Gan be employed depending on: the intrinsic intensity of the light source and the concentration of neutral excited silicon and kDron atoms. A multiple pass optical configuration is preferred.
When the neutral excited silicon and boron absorb light o f this wavelength the respective ions are formed because light whose wavelength is 3247.774 A meets the ionization energy requirements of silicon in its most long lived neutral state and exceeds that required by boron in its most long lived neutral state.
The ions thus formed while still in the moving gas stream are passed through an electric and/or magnetic field and the ions are diverted from the stream (by their interaction with the field) 1~

Table 2 Element & State Energy Difference Energy between neu~ral ~ ionized State states O O
A eV eV A
Matrix Silicon:
neutral 2881.578 4.303 ionized 1533.550 8.121 3.81~ 3247.774 P Layer Do~ant Boron:
neutral 2497.733 4.965 ionized 1362.460 8.296 3.331 ~ 3722.60 N Layer Dopants Antimony:
neutral 2060.380 5.995 ionized 14~5.351 8.639 3.644 3402.~54 Phosphorous:
neutral 2534.010 4.893 ionized 1182.755 10.484

5.591 2218.021 Arsenic:
neutral 1890.500 6.559 ionized 1264.010 9.810 ~ 3.251 381~.211 and directed thereby to a suitable surface for coating, If further purification is required of the gas stream prior to the point at which silicon and boron ions are formed (namely when irradiated with monochromatic light whose wave-length is 3247.774 A); then the gas stream can be first irra-diated with monochromatic light whose wavelength is slightly less than 3722.61 A. By doing so, any undesirable atomic or molecular species that can be ionized by 37~2.51 A light will be and can be remov~d from the gas stream by passing it through an electric and/or magnetic field located between O O
the 3722.61 A and 3247.774 A light sources.
The ions, ~ilicon and boron, are deposited on a nega-tively charged target where they form a crystal or crystals while picking up an electron and thus become neutral in a crys-tal lattice. The deposition process may proceed for as long as necessary to achieve the desired thickness.
Once the desired-thickness of P layer has been deposited, the N layer is deposited on top of the P layer without the neces-sity of removing the substrate-P layer for inspection or polish-ing. Any one or combination of th~ N layer dopants can be used in forming the N layer with silicon as the matrix. The method and apparatus employed is exactly the same as that described for forming the P layer using boron except that the wavelength of light used to form the ions is selected to correspond to the energy diffexence between the neutral Pxcited and ionized states of the particular atoms being used.
One further refinement that is useful in producing the maximum purity of a particular atomic species ic worth mention-ing. Though a particular atom, silicon, is used for illustra-tive it will be appreciated that the refinement could be applied to any other atom as well, e.g. germanium, etc.
Once the silicon atom is formed in its excited neutral state other neutral excited atoms, of an unwanted so~t, can also be formed. If these contaminant atoms can be ionized by 3247.774 A light then they can be ionized along with the sili-con. Therefore by irradiating all of the neutral excited atoms with another monochromatic light source whose wavelength corres-ponds to an energy slightly less than that required for the neutral excited silicon atoms to be ionized (3250 A) neutral excited silicon a~oms will proceed with the gas stream un-changed but the other neutral excited atoms that can be ion-ized will be and can be diverted out of the gas stream by ap-plication of an electric and/or magnetic field., It is also clear that any other neutral excited atoms as well as silicon will continue on with the gas stream that when the monochro~
matic light 3247.774 A irradiates the stream only the neutral excited silicon atoms will be ionized and all other atoms will pass on with the gas stream. Thus the refinement under discus~
sion provides an energy filter of approximately 3 A such that those neutral excited atoms that can be ionized at energies lower than neutral excited silicon are ionized and those neu-tral excited atoms that require more energy to become ionized than neutral excited silicon never became ionized and pass on with the gas stream to waste or collection.

Four additional examples of the application of metastable gases to useful processes are presented below, namely:
1) ~wo laser metal purification application 2) combustion application 3) catalyst formation 4) hydrocarbon cracking Example 3 Metal Purification with Two Lasers . .
A summary of this use can be briefly stated as follows:
a gas such as helium is passed through an electric field such that a large concentration of the excited neutral form of helium is created, referred to as metastable helium atoms; a volatile form of a selected metal, non-metal or other molecule referred to as the reactant gas is introduced into the stream of helium metastable atoms whereby energy transfer from the metastable atoms to the reactant gas atoms/molecules occurs, thus in-creasing the energy of the reactant molecules/atoms to an energy state referred to as a neutral excited state ~the energy of which is less than that required to cause ionization of the reactant gas atoms/molecules; by irradiation of the neutral excited reactant gas atorns/molecules with light whose wave-length corresponds exactly to the energy difference between the excited neutral .reactant species and the ionized reactant species, ionization occurs for those species in the reactant gas for which thé sum of the metastable energy and the energy of the irradiation light equals or exceeds the ionization ener-gy. Thus any impurity species in the reactant gas whose ion-ization energy requirement exceeds this sum will not be ion-ized and is therefore eliminated as a candidate for deposition in a thin film since deposition in this invention depends on ions. It is also clear that impurity species in the reactant gas whose ionization energy is less than this sum will be ionized along with the reactant and subsequently deposited in the thin film, and is thus regarded as an impurity. By reorga~izing the method of application of this invention to the deposition films and extending the idea upon which the invention is based, it is possible to avoid the inclusion in the thin film of impurity species whose ionization energy requirement is less than or equal to the reactant species. The discussion below illus-trates the method for a mixture of nickel, iron and tungsten where the objective is to make a thin film of nickel but one -with no inclusions of iron or tungsten. Referring to Table 1 and bearing in mind the details of the invention, it is clear that once the metastable reactant gas of nickel has been formed along wi~ those of the impurities, iron and tungsten, irradiation with 6316.9A light will cause the ionization of the nickel and iron neutral excited species but will not cause ionization of the tungsten neutral excited species.

Table 1 Neutral O IonizedO Difference O
Excited (Ae~ State (Ae~ in Energy (Aeb W ~008.8 2204.5 4897.3 ~Tungsten)3.0g3eV 5.625eV 2.532eV
O O O
Fe 3581.2A 2382.0A 7114.2A
(Iron)3.463eV 5.206eV 1.743eV
O O O
Ni 3414.8A 2216.5A 6316~9A
(Nickel)3.631eV 5.594eV 1.963eV

Thus, after deposition the nickel thin film will be found to in-clude only one of the two impurity species, that is iron but not tungsten. If, however, the neutral excited reactant specie and impurity species are first irradiated with light whose wave-length is greater than 6316.9~ the impurity species iron will be ionized but none of the rest. The iron ions can then be diverted, electrically or magnetically, from the reactant gas species (the nickel) and the only remaining impurity species, (that is the tungsten). The remaining mixture is then irradi-ated with light whose wavelength is less than or equal to 6316.9A but greater than ~897.3A thus forming nickel ions but not tungsten ions. In this way a reactant species whose ionization energy requirement is intermediate or between those of two im-purity species can be separated and deposited as a thin film free from inclusions of impurities.
In actual form the process would be run as follows:
By passing a 2 millmole/minute stream of helium, enclosed in a glass conduit, through two annular elec-trodes across which 300 Vdc is applied approximately lOl~ metastable helium atoms per second are formed. The reactant gas (composed of gaseous reactant Ni ~CO)6 (nickel carbonyl3 and two impurities Fe(CO)6 and W(CO)6, iron carbonyl and tungsten carbonyl respectively~
is introduced into the helium metastable stream and mixed by turbulence and diffusion. The neutral excited states of each metal is formed by--collisional energy transfer and/or Foster processes and helium is left in its neutral ground state. The reactant gas stream now containing the neutral excited species iron, nickel and tungsten, is conducted by p~essure difference along the glass conduit to a point at which it is irradiated by light whose wavelength is greater than 6316.9A
(say 6500A) whereupon the iron neutral excited species are ion-ized but not the nickel and tungsten neutral excited species.
The ionized iron is attracted to a negatively charged target within the glass conduit and thereby eliminated from the re-actant gas. The reactant gas stream now containing the neu-tral excited species nickel and tungsten only is conducted by pressure difference further along the glass conduit to a point at which it is irradiated by light whose wavelength is less than or equal to 6316.9A but not less than or equal to 4897.3A
whereupon the nickel neutral excited species are ionized but not the tungsten neutral excited species. The ionized nickel is at-tracted to another negatively charged tar~et within the glass conduit where it is deposited and forms a layer of nickel free from iron and tungsten, because the iron was previously eliminated as described above and the tungsten was never ionized and as such not deposited with the nickel.
Example 4 Enhanced Combustion of H drocarbon Fuels Y
With this discussion we shall present an example of a new means by which the metastable gases nitrogen and oxygen can be employed to improve the efficiency with which hydrocarbon fuels can be burned. The efficiency of combustion is related to the amount of useful work that can be extracted from the combustion products. In the absence of the process/means to be described, an internal combustion engine uses lS parts of air for every part of fuel; however, when the means to be described is employed with the internal combustion engine 33 parts of air for every part of fuel are consumed. Thus the efficiency of combustion is in-creased by a factor of 2.2.
The new means of combusting hydrocarbon fuels provides for:
1) the production of more useful work per unit mass of fuel than current combustion methods 2) more complete combustion of fuel and therefore lower levels of polluting or harmful gases (i.e,NO, N02, CO, etc.) in the exhaust 3) the elimination o:f the need for costly pollution abatement equipment in automobiles 4) more cost effective use of fuel The new means of combustion on the fuel-oxidant mixture (i.e.02 in air) being passed through an electrostatic or mag-netic field created by applying a DC voltage acros~ two axially aligned annular electrodes that surround the channel through which the gas mixture passes on its way to the combustion cham-ber. The resulting gas mixture has a high concentration of "metastable" oxygen and nitrogen molecules. Because the phy-sical nature of metastable atoms and/or molecules has been ex-plained above, no further discussion of their physical nature ~ill be presented; however, it is worth noting that the meta-stable atoms and/or molecules are not ions, hence the process does not depend on ionization or a plasma.
When metastable energy is collisionally transferred from either oxygen or nitrogen or both, to gas phase fuel and/or fuel aerosol (as a droplet) the increase in energy results in a reduction in the "activation energy" for combustion in the case of the vapor phase fuel molecules and an increase in vapor pressure of the fuel in the fuel aerosol particles. The last observation flows from the fact that liquid phase fuel does not burn but rather vapor phase fuel does burn. Thus in the case where the fuel is not well vapori~ed (i.e~ in an aerosol~, a sub-stantial amount of heat derived from the combustion of gas phase fuel, is required to supply the heat of vaporization for the fuel droplets in the aerosol. The-heat used to vaporize fuel droplets cannot be converted into work. When a fuel droplet in the aerosol receives additional energy such as collisionally transferred metastable , _ , . . , _ .. _ .. .

energy an incxease in the vapor pressure of the fuel aerosol droplet occurs due to the well accepted and widely used prin-ciple of thermodynamic equilibrium. Any open chemical system is constantly seeking the state of thermodynamic equilibrium because it is by definition the most stable state. Thermody-namic equilibrium is achieved by the re-distribution of excess energy into the electronic, translational, vibrational and ro-tational energy modes of the open chemical system. Thus if metastable energy is added to an aerosol fuel droplet it enters into the electronic mode of the syste~.but as the system tends to thermodynamic equilibrium, the excess eleccronic energy is quickly (Ca 10 6 sec) redistributed into the translational vibrational and rotational modes. These are the energy modes that most influence the vapor pressure of the fuel droplet, in descending order of importance.
It is by both the reduction of the activation energy of combustion for gas phase fuel molecules and the increase in vapor pressure o~ the aerosol fuel droplets that the 2.2 factor increase in combust~n efficiency is achieved.
The practical embodiment of this use is described in terms of an internal combustion 4-cycle engine, as in an automobile.
The fuel air mixture used therein is conducted to each cylinder by the intake manifold. Opposite each intake port, to which the intake manifold is connected mechanically, a conventional air-tight electrical feed-through is located on said manifold. The electrical feed-through is insulated from the manifold. A one millimeter diameter metal rod is welded to the electrical connector on the inside of the manifold. The length of the rod is adjusted so that it does not interfere with the operation of the valve. The metal of the rod is selected to have a high electronic work func-tion and to be inert. Tantalum was used in this example. Tothe exterior portion of the electrical connector, a positive connection to a 300 volt D.C. power supply is attached. The nega-tive connector of the power supply is attached to the metal of the manifold. This completes the electrical circuit which includes tne air gap between the tantalum metal rod and the interior metal surface of the manifold through which the hydrocarbon fuel-air mixture flows during operation. The power supply was selected to operate on a 12 volt D.C. input and to deliver 300 volts D.C.
output at 10 watts of power.
As a result of this operation, increased power and de-creased deleterious exhaust causes resulted, the exhaust gas being largely carbon dioxide and water vapor.
_xample 5 Catalyst Fabrication Many industrial processes rely on catalysts such as the metals platinum, rhodium, silverr nickel, gold, iron, copper, zinc and others. Even alloys of some of these metals are used as catalysts. Even though any or all of the above catalysts could-be formed by the-method to be described,only the platinum catalyst will be considered in connection with the ammonia oxida-tion process for the formation of nitric acid.
A platinum gauze is used as the catalyst in the ammonia oxidation industrial process. The majority of the mass of the platinum gauze is provided to assure a mechaniccllly stable phy-sical structure and a large surface area. Due to the expense of the metal it would be desirable to produce a platinum coat-ing on a much less expensive mechanical support.
Ordinarily, a catalyst is not consumed duriny the course of the reaction it initiates. ~owever, in the case 2~

.... _ , ... . . . . .. .. . .... ...

.L~

of the platinum gauze used in the ammonia oxidation process, the platinum appears to be consumed! The reason this occurs is that impurities in the platinum gauze react with ammonia or nitrous oxide or nitric acid but the platinum does not. The result is the physical erosion of the platinum gauze which leads to its disintegration and the need to replace it with fresh gauze.
Thus if ultrapure platinum could be coated on to a mechanically stable high surface area substrate such as aluminum oxide (A1203), the catalyst would last indefinitely and be vastly less expensive. The process described below achieves that end.
The method employed is exactly the same as that described in item 3 aboveD However, the volatile form of platinum may be platinum hexafluoride (PtF6) or Pt (PF3)4. The first light irradiation source would have a wavelength greater than ~858.8A
which would eliminate all impurities whose ionization energy requirement was less than that of platinum. The second light ir-radiation source would have a wavelength less than or equal to O O
2858.8A although no more than lOOA less, which will cause the ionization of the platinum neutral excited species and no others.
The second target could be A1203 or quartz wool towhich a nega-tive static charge is applied. ThUS the platInum ions would be neutralized and simultaneously deposited onto the substrate building up a surface of desired thickness and of virtually 100~ purity. The amount of platinum required would be 0.001~
the mass of that required for the conventional platinum gauze catalyst and last 10 to 100 times longer. E le 6 By means of this example we will describe a new use relat-ing to the production of petroleum products such as gasoline, jet fuel, fuel oil and the like from crude oil by a means not requir~

ing a catalyst. Currently the case is ~hat substantial amounts of costly cracking catalyst are required to produce petrol~um products from crude oil in the majority of oil refininy pro-cesses. The useful life-time of cracking catalysts ranges from a few hours to weeks, depending on the quality and chemi-cal characteristics of the crude oil being refined. Further, the cost of a fresh catalyst charge for a medium size oil re-finery can be as high as $400,000, according to Jim Hatten of the Texas Eastern Co. Thus it is clear that a new means of carrying out crude oil cracking that does not require an expensive catalyst could reduce production costs and there~
fore the consumer costs.
A brief description of the process is as follows:
So-called "cracking" of hydrocarbons is a non-technical way of referring or designating the rupture of a carbon-carbon bond in the hydrocarbon. The tendency of any chemical bond, such as a carbon-carbon bond, to precist can be expressed in terms of bond energy. Thus, in order to cause the rupture of such a bond requires at least the application of an acceptable form of energy to the bond to be ruptured and in an amount adequate to cause the desired rupture. Catalysts have been successfully put to this problem. Thus, catalysts have the means of reducing the tendency of the carbon-carbon bond to persist to the point or extent rupture occurs. Hence, catalyst "cracking" of crude oil to yield petroleum products can be thought of as a process whereby long chain hydrocarbons (crude oil) is broken up into short chain hy-drocarbons (petroleum products) by means of a catalyst that causes the rupture of carbon~carbon bond in long chain hydro-carbons. The resulting mixture is then distilled in the normal or conventional way.
The new invention does not require catalyst use; however, a new means of providing the required energy for carbon-carbon bond rupture is central to the process. The energy source used is a metastable form of one or more of the fixed gases or inert gases such as nitrogen, argon, helium, neon, krypton. Because of the abundance of nitrogen, it is considered to be the pre-ferred choice although the other gases work as well.
A metastable gas molecule or atom is one that has ex-cess energy in an amount sufficient to produce an excited state that is "metastable", i.e., relatively long lived ~0010 millisec-onds). When a large collection of metastable gas molecules ex ist they are referred to as a metastable gas. When slch a gas is brought in contact, that is mixed, with hydrocarbons colli-sion between the hydrocarbon molecules and metastable molecules/
atoms to the hydrocarbon molecules, the me-tastable species men~
tioned above all have sufficient energy to rupture the carbon-carbon bond in the host hydrocarbon molecule. The fate of the metastable gas molecule after energy transfer is that it returns to the ground state (i.e., state of minimum electronic, vibra-tional and rotational energy). Metastable gases are generated by passing a stream of ground state gas moleculeslatoms through a DC potential gradient or by exposing the gas stream to a micro-wave field.
More specifically, in order to break a carbon-carbon chemical or covalent bond homolytically 84.4 Kcal per mol must be applied to the hydrocarbon. This amount o~ energy corresponds to 3.66 eV. The metastable energy o~ certain fixed and inert gases is shown in the table below.

Table I

Atom/ Spectroscopy Metastable Molecule Notation __ Enerqy in eV
He 2 S 20.6 2 S 19.82 Ne 3pO 16.7 3P2 16.6 Ar 3pO 11.7 3P2 11.5 Kr 3pO 10.5 3P2 9.9 Xe 3pO 9-44 3P1 8.43 3P2 8.31 ~ 6.03 N2(g) 3~l~

Thus by passing nitrogen gas through an annular pair of electrodes across which 200 volts DC is applied or through a microwave generator or magnetic field substantial amounts of metastable species of nitrogen are produced. The amount per unit time of metastable gas produced depends on the power applied to the electrical field or magnetic field or microwave field, as well as the flow rate of the ground state gas through the electro-magnetic force ¦EME`) field. For example, a 200 VDC 5 watt EMF
field is adequate to produce 6 X 10 3 metastable atoms/molecules per 10 min. Because the production of metastable atoms/molecules is phy~ically similar to an optical absorption process which de-pends on instantaneous concentration of ground state gas in the field, scale-up is readily feasible. Thus, petroleum products are formed at a rate equal to that of the production of metastable gas molecules diminished by losses to the walls and recombination pro-cesses. The estimated loss is less than 10%!
With crude oil in the vapor phase such as the fluidized bed cracker combination with a metastable gas of the type described above, it is straightforward, where a 50-50 ratio of metastable gas to crude ~il vapor is maintained by means of concentric an-nular jets.
Experimental evidence of the principle was obtained using a long chain hydrocarbon, n-decane. When n-decane vapor was mixed with nitrogen gas metastable molecules by means of a con-centric annular jet the following products were obtained:

Table II

Carbon # Relative -7 4.3 8 13.4 9 10.7 ~-7 11 13.

a) includes isomers Thus it is clear hydrocarbon craclcing can be promoted as described.

Other ~referred applications envisoned for this inven-tion are:
1) catalyst metals deposited on inexpensive substrates.
2~ microelectronic units or components (diodes, trans-istors and the like) 3~ metal or polymer coatings to retard or prohibit cor-rosion and~or wear 4) special optical surfaces and crystals 5) low cost conductors

6) high purity materials of any kind

7) to replace any high temperature epitaxial process

8) to separate in relatively pure form any difficultly separable elements, including but not limited to the rare earth elements, metals of the platinum group, rare gases such as argon, neon, etc., hydrogen, helium or other gases, atmos-pheric gases generally, and the halogens

9) to carry out any chemical reaction in which the injection of specific energy types is helpful.

Although many variations may be contemplated within the ~cope of the invention we intend to be limited only by the fol-lowing Patent Claims.

29a

Claims (18)

WE CLAIM:

1 . A method for producing ultra-pure coatings of metal, non-metal, organics, inorganics and other substances, which comprises passing a flow of a reagent gas of helium, or argon, through two annular electrodes across which a voltage of 200 to 300 volts is applied and bringing said reagent gas into contact with a sample gas selected from the group of WCO)6, Ni (CO)6, silanes, perfluorobutane, whereby the reagent gas being metastable transfers its excess energy to the sample gas to produce the metal, non-metal, or other molecule in neu-tral high energy state, setting a laser pumped pulse tunable dye laser to the wavelength corresponding to the exact energy necessary to cause ionization of the sample gas given the energy of its high neutral high energy state, said foregoing procedure .
taking place in a container cavity such that an electric or magnetic field is applied so as to couple a uniform film of the particular ions involved to the site of their deposition whereby at least one layer of the selected product substance is deposited in controlled thickness on a selected target sub-strate, the deposit amount being controlled by controlling the rate at which the sample gas ions are formed.

2 . The deposition process which comprises in-termingling a reagent gas in a metastable state with a sample gas causing the latter to be energized to neutral atoms or molecules in an excited state, providing a selected light source to supply additional energy in an amount correspond-ing to the difference between that of the excited and ionized state of said sample gas, thus causing selective ionization of the latter, imposing an electrical or maqnetic force on said ions to cause them to deposit from the gas stream on a substrate as stable atoms.

3 . The process of claim 2 wherein selected metals, non-metals and molecules are deposited in any alternat-ing order to produce a sandwich of substantially 100% pure in-dividual layers.

4 . The process of Claim 2 wherein more than one metal is deposited simultaneiously to form an alloy lay-er.

5 . The process of Claim 2 wherein monomers are deposited as ions on a surface such that polymerization occurs.

6. The process of Claim 2 wherein a catalyst layer is deposited.

7. The process of Claim 2 wherein coatings are deposited to form microelastomeric components.

8. The process of Claim 2 wherein deposits are formed to produce optical surfaces.

9. The deposition process of Claim 2 wherein said ions are metallic,

10. The deposition process of Claim 2 wherein said ions are non-metallic.

11. The deposition process of Claim 2 wherein said ions are organic.

12. The deposition process of Claim 2 wherein said ions are inorganic.

13. The deposition process of Claim 2 wherein said ions are polymeric.

14. The deposition process of Claim 2 wherein said ions are a gas.

15. The process of Claim 2 in which the ions are caused to deposit from the gas stream into a collection zone.

16. The process of Claim 2 wherein the ions are metallic and are deposited on a substrate to form a catalyst.

17. The process of Claim 2 in which the ions include at least three metals to be separated and two selective ionization steps are carried out with two successive selected light sources to produce three separate purified metal depos-its.

18. The deposition process which comprises in-termingling a reagent gas in a metastable state with a sample gas including an element capable of forming a single crystal matrix, and a dopant material in vapor phase, causing the sample gas and dopant to be energized to neutral atoms or molecules in an excited state, providing a selected light source to supply additional energy in an amount correspond-ing to the difference between that of the excited and ion-ized states of said sample gas and dopant, thus causing select-ive ionization of both the matrix material and the dopant, imposing an electrical or magnetic force on said ions to cause them to de-posit simultaneouoly from the gas stream on a substrate as stable atoms and simultaneously, the intermingled matrix molecules and dopant molecules whereby the controlled doped single crystal is formed.