BRPI1009211A2 - "sensor de imagem" - Google Patents
"sensor de imagem"Info
- Publication number
- BRPI1009211A2 BRPI1009211A2 BRPI1009211A BRPI1009211A BRPI1009211A2 BR PI1009211 A2 BRPI1009211 A2 BR PI1009211A2 BR PI1009211 A BRPI1009211 A BR PI1009211A BR PI1009211 A BRPI1009211 A BR PI1009211A BR PI1009211 A2 BRPI1009211 A2 BR PI1009211A2
- Authority
- BR
- Brazil
- Prior art keywords
- image sensor
- sensor
- image
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J1/46—Electric circuits using a capacitor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0264—Electrical interface; User interface
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0291—Housings; Spectrometer accessories; Spatial arrangement of elements, e.g. folded path arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2823—Imaging spectrometer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/46—Measurement of colour; Colour measuring devices, e.g. colorimeters
- G01J3/50—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/17—Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
- H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8027—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N2209/00—Details of colour television systems
- H04N2209/04—Picture signal generators
- H04N2209/041—Picture signal generators using solid-state devices
- H04N2209/042—Picture signal generators using solid-state devices having a single pick-up sensor
- H04N2209/047—Picture signal generators using solid-state devices having a single pick-up sensor using multispectral pick-up elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Human Computer Interaction (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/384,549 US8816460B2 (en) | 2009-04-06 | 2009-04-06 | Image sensor |
| PCT/FI2010/050065 WO2010116023A1 (en) | 2009-04-06 | 2010-02-04 | Image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BRPI1009211A2 true BRPI1009211A2 (pt) | 2016-03-15 |
Family
ID=42825405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI1009211A BRPI1009211A2 (pt) | 2009-04-06 | 2010-02-04 | "sensor de imagem" |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US8816460B2 (pt) |
| EP (1) | EP2417632B1 (pt) |
| KR (1) | KR101434014B1 (pt) |
| CN (1) | CN102365742B (pt) |
| BR (1) | BRPI1009211A2 (pt) |
| CA (2) | CA2841508C (pt) |
| TW (1) | TWI556418B (pt) |
| WO (1) | WO2010116023A1 (pt) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8648287B1 (en) * | 2005-05-27 | 2014-02-11 | Rambus Inc. | Image sensor using single photon jots and processor to create pixels |
| US8134115B2 (en) * | 2009-06-23 | 2012-03-13 | Nokia Corporation | Color filters for sub-diffraction limit-sized light sensors |
| JP5566093B2 (ja) * | 2009-12-18 | 2014-08-06 | キヤノン株式会社 | 固体撮像装置 |
| US8420996B2 (en) * | 2009-12-23 | 2013-04-16 | Nokia Corporation | Intensity estimation using binary sensor array with spatially varying thresholds |
| US8319855B2 (en) * | 2010-01-19 | 2012-11-27 | Rambus Inc. | Method, apparatus and system for image acquisition and conversion |
| KR101565748B1 (ko) | 2013-05-31 | 2015-11-05 | 삼성에스디에스 주식회사 | 이미지에서 반복 패턴을 검출하는 방법 및 장치 |
| US9621864B2 (en) * | 2014-01-14 | 2017-04-11 | Microsoft Technology Licensing, Llc | Spectral imaging system |
| US9752929B2 (en) * | 2014-05-08 | 2017-09-05 | Pinnacle Imaging Corporation | Light-detecting device and method for converting optical radiation on switched conductivity diodes |
| US9865642B2 (en) | 2015-06-05 | 2018-01-09 | Omnivision Technologies, Inc. | RGB-IR photosensor with nonuniform buried P-well depth profile for reduced cross talk and enhanced infrared sensitivity |
| US9979907B2 (en) * | 2015-09-18 | 2018-05-22 | Sony Corporation | Multi-layered high-dynamic range sensor |
| EP3631533A4 (en) | 2017-05-24 | 2021-03-24 | The Trustees of Columbia University in the City of New York | WIDEBAND ACHROMATIC FLAT OPTICAL COMPONENTS DUE TO DISPERSION CONSTRUCTED DIELECTRIC META SURFACES |
| CN111656707A (zh) | 2017-08-31 | 2020-09-11 | 梅特兰兹股份有限公司 | 透射型超表面透镜集成 |
| CA3089373A1 (en) | 2018-01-24 | 2019-08-01 | President And Fellows Of Harvard College | Polarization state generation with a metasurface |
| KR101961439B1 (ko) * | 2018-06-14 | 2019-07-17 | 강용훈 | 센서 유닛 및 이를 포함하는 자외선 검출 장치 |
| CN118707744A (zh) | 2018-07-02 | 2024-09-27 | 梅特兰兹股份有限公司 | 用于激光散斑减少的超表面 |
| JP7242285B2 (ja) * | 2018-12-19 | 2023-03-20 | キオクシア株式会社 | 半導体装置 |
| US11978752B2 (en) | 2019-07-26 | 2024-05-07 | Metalenz, Inc. | Aperture-metasurface and hybrid refractive-metasurface imaging systems |
| US11578968B1 (en) | 2019-10-31 | 2023-02-14 | President And Fellows Of Harvard College | Compact metalens depth sensors |
| CN112770020A (zh) * | 2019-11-05 | 2021-05-07 | 北京小米移动软件有限公司 | 图像传感模组、方法、装置、电子设备及介质 |
| US11927769B2 (en) | 2022-03-31 | 2024-03-12 | Metalenz, Inc. | Polarization sorting metasurface microlens array device |
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| KR100875140B1 (ko) | 2007-11-01 | 2008-12-22 | 실리콤텍(주) | 기준전압이 자동으로 조절되는 저전력 이미지 센서 및 이이미지 센서가 포함되어 하나의 칩 상에 집적된 집적회로 |
| WO2008067472A2 (en) | 2006-11-29 | 2008-06-05 | President And Fellows Of Harvard College | A new spatio-spectral sampling paradigm for imaging and a novel color filter array design |
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| WO2009136989A1 (en) | 2008-05-09 | 2009-11-12 | Ecole Polytechnique Federale De Lausanne | Image sensor having nonlinear response |
| JP5055643B2 (ja) | 2008-07-28 | 2012-10-24 | 株式会社リコー | 撮像素子および画像撮像装置 |
| US8134115B2 (en) * | 2009-06-23 | 2012-03-13 | Nokia Corporation | Color filters for sub-diffraction limit-sized light sensors |
| US8198578B2 (en) * | 2009-06-23 | 2012-06-12 | Nokia Corporation | Color filters for sub-diffraction limit-sized light sensors |
| US8179457B2 (en) * | 2009-06-23 | 2012-05-15 | Nokia Corporation | Gradient color filters for sub-diffraction limit sensors |
-
2009
- 2009-04-06 US US12/384,549 patent/US8816460B2/en active Active
-
2010
- 2010-02-04 CN CN201080014897.3A patent/CN102365742B/zh active Active
- 2010-02-04 EP EP10761224.4A patent/EP2417632B1/en active Active
- 2010-02-04 CA CA2841508A patent/CA2841508C/en active Active
- 2010-02-04 BR BRPI1009211A patent/BRPI1009211A2/pt not_active Application Discontinuation
- 2010-02-04 WO PCT/FI2010/050065 patent/WO2010116023A1/en not_active Ceased
- 2010-02-04 CA CA2757792A patent/CA2757792C/en active Active
- 2010-02-04 KR KR1020117026314A patent/KR101434014B1/ko active Active
- 2010-04-02 TW TW099110334A patent/TWI556418B/zh active
-
2014
- 2014-07-11 US US14/328,851 patent/US9257475B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN102365742A (zh) | 2012-02-29 |
| CA2757792C (en) | 2016-04-05 |
| US8816460B2 (en) | 2014-08-26 |
| CA2757792A1 (en) | 2010-10-14 |
| EP2417632A4 (en) | 2016-07-06 |
| US9257475B2 (en) | 2016-02-09 |
| EP2417632B1 (en) | 2019-01-09 |
| CN102365742B (zh) | 2014-07-16 |
| TW201119018A (en) | 2011-06-01 |
| CA2841508C (en) | 2018-08-07 |
| KR20120009481A (ko) | 2012-01-31 |
| US20140319324A1 (en) | 2014-10-30 |
| EP2417632A1 (en) | 2012-02-15 |
| KR101434014B1 (ko) | 2014-09-22 |
| US20100252716A1 (en) | 2010-10-07 |
| WO2010116023A1 (en) | 2010-10-14 |
| CA2841508A1 (en) | 2010-10-14 |
| TWI556418B (zh) | 2016-11-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B25A | Requested transfer of rights approved |
Owner name: NOKIA TECHNOLOGIES OY (FI) |
|
| B06F | Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette] | ||
| B06T | Formal requirements before examination [chapter 6.20 patent gazette] | ||
| B07A | Application suspended after technical examination (opinion) [chapter 7.1 patent gazette] | ||
| B09B | Patent application refused [chapter 9.2 patent gazette] | ||
| B09B | Patent application refused [chapter 9.2 patent gazette] |
Free format text: MANTIDO O INDEFERIMENTO UMA VEZ QUE NAO FOI APRESENTADO RECURSO DENTRO DO PRAZO LEGAL |