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BRPI1009211A2 - "sensor de imagem" - Google Patents

"sensor de imagem"

Info

Publication number
BRPI1009211A2
BRPI1009211A2 BRPI1009211A BRPI1009211A BRPI1009211A2 BR PI1009211 A2 BRPI1009211 A2 BR PI1009211A2 BR PI1009211 A BRPI1009211 A BR PI1009211A BR PI1009211 A BRPI1009211 A BR PI1009211A BR PI1009211 A2 BRPI1009211 A2 BR PI1009211A2
Authority
BR
Brazil
Prior art keywords
image sensor
sensor
image
Prior art date
Application number
BRPI1009211A
Other languages
English (en)
Inventor
Ossi Kalevo
Samu Koskinen
Tero Rissa
Original Assignee
Nokia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nokia Corp filed Critical Nokia Corp
Publication of BRPI1009211A2 publication Critical patent/BRPI1009211A2/pt

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182Colour image sensors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • G01J1/46Electric circuits using a capacitor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02Details
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02Details
    • G01J3/0264Electrical interface; User interface
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02Details
    • G01J3/0291Housings; Spectrometer accessories; Spatial arrangement of elements, e.g. folded path arrangements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28Investigating the spectrum
    • G01J3/2823Imaging spectrometer
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/46Measurement of colour; Colour measuring devices, e.g. colorimeters
    • G01J3/50Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/17Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182Colour image sensors
    • H10F39/1825Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/802Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027Geometry of the photosensitive area
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N2209/00Details of colour television systems
    • H04N2209/04Picture signal generators
    • H04N2209/041Picture signal generators using solid-state devices
    • H04N2209/042Picture signal generators using solid-state devices having a single pick-up sensor
    • H04N2209/047Picture signal generators using solid-state devices having a single pick-up sensor using multispectral pick-up elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/809Constructional details of image sensors of hybrid image sensors

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Human Computer Interaction (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
BRPI1009211A 2009-04-06 2010-02-04 "sensor de imagem" BRPI1009211A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/384,549 US8816460B2 (en) 2009-04-06 2009-04-06 Image sensor
PCT/FI2010/050065 WO2010116023A1 (en) 2009-04-06 2010-02-04 Image sensor

Publications (1)

Publication Number Publication Date
BRPI1009211A2 true BRPI1009211A2 (pt) 2016-03-15

Family

ID=42825405

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI1009211A BRPI1009211A2 (pt) 2009-04-06 2010-02-04 "sensor de imagem"

Country Status (8)

Country Link
US (2) US8816460B2 (pt)
EP (1) EP2417632B1 (pt)
KR (1) KR101434014B1 (pt)
CN (1) CN102365742B (pt)
BR (1) BRPI1009211A2 (pt)
CA (2) CA2841508C (pt)
TW (1) TWI556418B (pt)
WO (1) WO2010116023A1 (pt)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8648287B1 (en) * 2005-05-27 2014-02-11 Rambus Inc. Image sensor using single photon jots and processor to create pixels
US8134115B2 (en) * 2009-06-23 2012-03-13 Nokia Corporation Color filters for sub-diffraction limit-sized light sensors
JP5566093B2 (ja) * 2009-12-18 2014-08-06 キヤノン株式会社 固体撮像装置
US8420996B2 (en) * 2009-12-23 2013-04-16 Nokia Corporation Intensity estimation using binary sensor array with spatially varying thresholds
US8319855B2 (en) * 2010-01-19 2012-11-27 Rambus Inc. Method, apparatus and system for image acquisition and conversion
KR101565748B1 (ko) 2013-05-31 2015-11-05 삼성에스디에스 주식회사 이미지에서 반복 패턴을 검출하는 방법 및 장치
US9621864B2 (en) * 2014-01-14 2017-04-11 Microsoft Technology Licensing, Llc Spectral imaging system
US9752929B2 (en) * 2014-05-08 2017-09-05 Pinnacle Imaging Corporation Light-detecting device and method for converting optical radiation on switched conductivity diodes
US9865642B2 (en) 2015-06-05 2018-01-09 Omnivision Technologies, Inc. RGB-IR photosensor with nonuniform buried P-well depth profile for reduced cross talk and enhanced infrared sensitivity
US9979907B2 (en) * 2015-09-18 2018-05-22 Sony Corporation Multi-layered high-dynamic range sensor
EP3631533A4 (en) 2017-05-24 2021-03-24 The Trustees of Columbia University in the City of New York WIDEBAND ACHROMATIC FLAT OPTICAL COMPONENTS DUE TO DISPERSION CONSTRUCTED DIELECTRIC META SURFACES
CN111656707A (zh) 2017-08-31 2020-09-11 梅特兰兹股份有限公司 透射型超表面透镜集成
CA3089373A1 (en) 2018-01-24 2019-08-01 President And Fellows Of Harvard College Polarization state generation with a metasurface
KR101961439B1 (ko) * 2018-06-14 2019-07-17 강용훈 센서 유닛 및 이를 포함하는 자외선 검출 장치
CN118707744A (zh) 2018-07-02 2024-09-27 梅特兰兹股份有限公司 用于激光散斑减少的超表面
JP7242285B2 (ja) * 2018-12-19 2023-03-20 キオクシア株式会社 半導体装置
US11978752B2 (en) 2019-07-26 2024-05-07 Metalenz, Inc. Aperture-metasurface and hybrid refractive-metasurface imaging systems
US11578968B1 (en) 2019-10-31 2023-02-14 President And Fellows Of Harvard College Compact metalens depth sensors
CN112770020A (zh) * 2019-11-05 2021-05-07 北京小米移动软件有限公司 图像传感模组、方法、装置、电子设备及介质
US11927769B2 (en) 2022-03-31 2024-03-12 Metalenz, Inc. Polarization sorting metasurface microlens array device

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4980252U (pt) * 1972-10-28 1974-07-11
US4011016A (en) * 1974-04-30 1977-03-08 Martin Marietta Corporation Semiconductor radiation wavelength detector
US6704049B1 (en) * 1998-02-23 2004-03-09 Micron Technology, Inc. Interpolator for a CMOS image sensor using a digital register
US5965875A (en) * 1998-04-24 1999-10-12 Foveon, Inc. Color separation in an active pixel cell imaging array using a triple-well structure
US6665012B1 (en) * 1998-09-22 2003-12-16 Pixim, Inc. Process-scalable high spatial resolution and low bit resolution CMOS area image sensor
US6252577B1 (en) * 1999-03-18 2001-06-26 Intel Corporation Efficient methodology for scaling and transferring images
US6731397B1 (en) 1999-05-21 2004-05-04 Foveon, Inc. Method for storing and retrieving digital image data from an imaging array
US6727521B2 (en) * 2000-09-25 2004-04-27 Foveon, Inc. Vertical color filter detector group and array
US6888568B1 (en) * 1999-08-19 2005-05-03 Dialog Semiconductor Gmbh Method and apparatus for controlling pixel sensor elements
US6498576B1 (en) * 2000-05-09 2002-12-24 Pixim, Inc. Selective analog-to-digital conversion for a digital pixel sensor
DE60134950D1 (de) * 2001-02-08 2008-09-04 Sgs Thomson Microelectronics Referenzdatenkodierung für eine Festkörper-Bildaufnahmevorrichtung
US6864557B2 (en) * 2001-06-18 2005-03-08 Foveon, Inc. Vertical color filter detector group and array
US6960757B2 (en) * 2001-06-18 2005-11-01 Foveon, Inc. Simplified wiring schemes for vertical color filter pixel sensors
US7906826B2 (en) * 2002-02-05 2011-03-15 E-Phocus Many million pixel image sensor
US20040178463A1 (en) * 2002-03-20 2004-09-16 Foveon, Inc. Vertical color filter sensor group with carrier-collection elements of different size and method for fabricating such a sensor group
US6841816B2 (en) * 2002-03-20 2005-01-11 Foveon, Inc. Vertical color filter sensor group with non-sensor filter and method for fabricating such a sensor group
US6704046B2 (en) * 2002-04-17 2004-03-09 Motorola, Inc. Digital pixel image sensor with independent color channel reference signals
US7129466B2 (en) * 2002-05-08 2006-10-31 Canon Kabushiki Kaisha Color image pickup device and color light-receiving device
US7408572B2 (en) * 2002-07-06 2008-08-05 Nova Research, Inc. Method and apparatus for an on-chip variable acuity imager array incorporating roll, pitch and yaw angle rates measurement
DE10233359A1 (de) 2002-07-23 2004-02-19 Daimlerchrysler Ag Druckguss-Zylinderkurbelgehäuse
US7402897B2 (en) * 2002-08-08 2008-07-22 Elm Technology Corporation Vertical system integration
US6646318B1 (en) * 2002-08-15 2003-11-11 National Semiconductor Corporation Bandgap tuned vertical color imager cell
US6891143B2 (en) * 2002-10-30 2005-05-10 Microsoft Corporation Photo-sensor array with pixel-level signal comparison
US7236191B2 (en) * 2003-04-30 2007-06-26 Nokia Corporation Method and system for image processing with pixel interpolation using second order gradients
US20040245592A1 (en) * 2003-05-01 2004-12-09 Yale University Solid state microchannel plate photodetector
WO2004099865A2 (en) 2003-05-02 2004-11-18 Massachusetts Institute Of Technology Digital photon-counting geiger-mode avalanche photodiode solid-state monolithic intensity imaging focal-plane with scalable readout circuitry
JP4365247B2 (ja) 2004-03-17 2009-11-18 富士フイルム株式会社 光電変換膜積層型固体撮像素子
JP2006027017A (ja) 2004-07-14 2006-02-02 Fuji Photo Film Co Ltd プリンタユニット
US7242027B2 (en) * 2004-08-13 2007-07-10 Paul Steven Schranz Light emitting and image sensing device and apparatus
EP1812968B1 (en) * 2004-08-25 2019-01-16 Callahan Cellular L.L.C. Apparatus for multiple camera devices and method of operating same
US20060124832A1 (en) * 2004-09-27 2006-06-15 Lightspin Technologies, Inc. Wide dynamic range photodetector
EP1667246A1 (en) 2004-12-03 2006-06-07 ETeCH AG A multi-colour sensitive device for colour image sensing
US7808023B2 (en) * 2005-08-24 2010-10-05 Aptina Imaging Corporation Method and apparatus providing integrated color pixel with buried sub-wavelength gratings in solid state imagers
WO2007086352A1 (ja) * 2006-01-25 2007-08-02 Kyocera Corporation 撮像素子及びカメラモジュール
JP2008010773A (ja) * 2006-06-30 2008-01-17 Matsushita Electric Ind Co Ltd 固体撮像素子およびその製造方法
US7612805B2 (en) * 2006-07-11 2009-11-03 Neal Solomon Digital imaging system and methods for selective image filtration
WO2008060124A2 (en) * 2006-11-17 2008-05-22 Silicon Communications Technology Co., Ltd. Low power image sensor adjusting reference voltage automatically and optical pointing device comprising the same
KR100875140B1 (ko) 2007-11-01 2008-12-22 실리콤텍(주) 기준전압이 자동으로 조절되는 저전력 이미지 센서 및 이이미지 센서가 포함되어 하나의 칩 상에 집적된 집적회로
WO2008067472A2 (en) 2006-11-29 2008-06-05 President And Fellows Of Harvard College A new spatio-spectral sampling paradigm for imaging and a novel color filter array design
US20100046077A1 (en) 2006-12-29 2010-02-25 Nanolambda Inc. Wavelength selective metallic embossing nanostructure
CN102017147B (zh) 2007-04-18 2014-01-29 因维萨热技术公司 用于光电装置的材料、系统和方法
KR20090107254A (ko) * 2008-04-08 2009-10-13 삼성전자주식회사 이진 광신호를 이용한 이미지 센서 및 구동방법
WO2009136989A1 (en) 2008-05-09 2009-11-12 Ecole Polytechnique Federale De Lausanne Image sensor having nonlinear response
JP5055643B2 (ja) 2008-07-28 2012-10-24 株式会社リコー 撮像素子および画像撮像装置
US8134115B2 (en) * 2009-06-23 2012-03-13 Nokia Corporation Color filters for sub-diffraction limit-sized light sensors
US8198578B2 (en) * 2009-06-23 2012-06-12 Nokia Corporation Color filters for sub-diffraction limit-sized light sensors
US8179457B2 (en) * 2009-06-23 2012-05-15 Nokia Corporation Gradient color filters for sub-diffraction limit sensors

Also Published As

Publication number Publication date
CN102365742A (zh) 2012-02-29
CA2757792C (en) 2016-04-05
US8816460B2 (en) 2014-08-26
CA2757792A1 (en) 2010-10-14
EP2417632A4 (en) 2016-07-06
US9257475B2 (en) 2016-02-09
EP2417632B1 (en) 2019-01-09
CN102365742B (zh) 2014-07-16
TW201119018A (en) 2011-06-01
CA2841508C (en) 2018-08-07
KR20120009481A (ko) 2012-01-31
US20140319324A1 (en) 2014-10-30
EP2417632A1 (en) 2012-02-15
KR101434014B1 (ko) 2014-09-22
US20100252716A1 (en) 2010-10-07
WO2010116023A1 (en) 2010-10-14
CA2841508A1 (en) 2010-10-14
TWI556418B (zh) 2016-11-01

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Legal Events

Date Code Title Description
B25A Requested transfer of rights approved

Owner name: NOKIA TECHNOLOGIES OY (FI)

B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06T Formal requirements before examination [chapter 6.20 patent gazette]
B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B09B Patent application refused [chapter 9.2 patent gazette]
B09B Patent application refused [chapter 9.2 patent gazette]

Free format text: MANTIDO O INDEFERIMENTO UMA VEZ QUE NAO FOI APRESENTADO RECURSO DENTRO DO PRAZO LEGAL