BE1031405B1 - a multi-main grid photovoltaic module and its manufacturing process - Google Patents

Abstract

The present invention discloses a multi-main grid photovoltaic module and its manufacturing method, which relates to the field of photovoltaic technology. The photovoltaic module comprises a frame unit, a photovoltaic panel, the frame unit comprises an upper frame and a lower frame, the photovoltaic panel comprises a bottom plate, a battery module, a solar panel, a photovoltaic film, the solar panel comprises a substrate, a silicon wafer and a back electrode fixed in a stack; the substrate and the silicon wafer are embedded with a secondary grid and a main grid; the main grid is used to collect and transmit the current collected by each secondary grid; the photovoltaic panel is fixed within the frame unit, the upper frame is fixedly connected to the photovoltaic film and the lower frame is fixedly connected to the bottom plate; the photovoltaic film, the solar panel, the battery module and the bottom plate are fixedly connected one after the other; the battery module is electrically connected to the solar panel. The invention achieves improved semiconductor space utilization and lower secondary grid resistance consumption.

Description

a multi-main grid photovoltaic module and its manufacturing process BE2023/5248

operating instructions

technical field

The present invention relates to the field of photovoltaic technology, in particular to a multi-main grid photovoltaic module and its manufacturing method.

technology in the background

With the rapid development of science and technology and the continuous

As people’s living standards have improved, they have started to pay more attention to environmental issues, and new energy technologies that pollute the environment less or not at all, such as solar energy generation, have become increasingly popular in recent years.

years and are now used in various areas.

Previous multi-main grid photovoltaic panels have both positive and negative

Electrodes on the light receiving side of the panel, resulting in a low

semiconductor space utilization of the panel and excessive resistance due to the long transmission path of the secondary grid.

Therefore, the provision of a photovoltaic module with an anodic multi-

Main grid on the light receiving side of the photovoltaic module and a cathodic

Counter electrode on the backlight side of the photovoltaic module to solve the above problems is an urgent problem for professionals in this field.

Content of the invention

In view of this, the present invention provides a multi-principal lattice

Photovoltaic module and its manufacturing process to meet the

to improve semiconductor space utilization and reduce secondary grid resistance consumption.

To achieve the above purpose, the present invention uses the following technical solution:

A multi-main grid photovoltaic module comprising: a frame unit, a

photovoltaic panel,

The frame unit comprising an upper frame and a lower frame, wherein the photovoltaic panel comprises a base plate, a battery module, a solar panel, a

Photovoltaic film, wherein the solar panel comprises a substrate secured in the stack, a

silicon wafer and a back electrode; the secondary grid, a main grid embedded between the substrate and the silicon wafer; the main grid being used to combine and transfer the current collected by each of the secondary grids.

The photovoltaic panel is fixed inside the frame unit, the upper frame is firmly connected with the photovoltaic film, and the lower frame is firmly connected with the bottom plate; the photovoltaic film, solar panel, battery module and bottom plate are firmly connected one after another; the battery module is electrically connected with the solar panel.

Optionally, the silicon wafer consists of a p-i-n type photovoltaic cell, whereby the BE2023/5248

A p-i-n type photovoltaic cell comprising a p-type semiconductor film based on silicon hydride, an i-type intrinsic semiconductor film and an n-type semiconductor film stacked one after the other, wherein the back electrode is in direct contact with the

n-type semiconductor film of the silicon wafer and is electrically connected thereto, wherein the main grid and the secondary grid are each embedded in the p-type semiconductor film.

Optionally, the photovoltaic film is made of black PE photovoltaic film.

Optionally, the main grid and the secondary grid are printed using screen-printed silver paste,

electroplating or 3D printing.

Optionally, each solar panel is provided with 4 rows of main grids, each row of

main grids with an integer number of secondary grids greater than 2; the width of the main grids is 1.2 mm-1.6 mm and the width of each of the secondary grids is 0.4 mm-0.6 mm.

According to the above method, the invention also discloses a manufacturing method for a multi-main grid photovoltaic module, the manufacturing steps of which include:

S1: Manufacturing of solar cells: deposition of silicon wafers, back electrodes on a substrate coated with main and secondary grids.

S2: Manufacturing a photovoltaic panel based on the said solar panel.

S3: Installation of the photovoltaic panel on the inside of the frame unit and

Welding the frame unit to produce a photovoltaic module.

S4: Checking the prepared photovoltaic module.

Optionally, S1 includes in particular:

S1.1 Coating the main grid and the secondary grid, which is transparent and conductive, on the substrate;

S1.2: depositing a p-type semiconductor film based on silicon hydride, an intrinsic i-type semiconductor film, an n-type semiconductor film on the substrate coated with the main grid (7), the secondary grid (8) which are stacked one after the other; wherein the silicon wafer is made of a p-i-n type photovoltaic cell, wherein the p-i-n type photovoltaic cell of the p-type semiconductor film based on

Silicon hydride comprising i-type intrinsic semiconductor film, n-type semiconductor film and p-type semiconductor film;

S1.3: Depositing the back electrode on the n-type semiconductor film after the deposition; wherein the back electrode comprises a silver film, a nickel film and an aluminum film sequentially and overlappingly.

Optionally, S2 includes in particular:

S2.1: Attaching and bonding a photovoltaic film to the substrate of the solar panel with

Help of a thermally conductive EVA encapsulation;

S2.2: Attaching and securing one side of the battery module to the BE2023/5248

side of the solar panel provided with a back electrode, electrically connecting the solar panel to the battery module by means of an electrode foil;

S2.3: Manufacture the photovoltaic panel by attaching the other side of the

Battery module with a base plate; the photovoltaic panel comprises the photovoltaic film, the

Solar panel, battery module and base plate arranged one above the other.

Optionally, S3 includes in particular:

S3.1: Attaching the photovoltaic panels to the lower frame (2);

S3.2: Fastening the upper frame (1) to the lower frame (2);

S3.3: Welding the upper frame (1) and the lower frame (2) into an integral frame unit, the frame unit comprising the upper frame (1) and the lower frame (2).

Optionally, S4 includes in particular: after the manufacture of the photovoltaic module,

Testing the photovoltaic panel to determine whether the photovoltaic panel is capable of proper operation and whether the photovoltaic panel has proper

voltage and current are generated.

As can be seen from the above technical solutions, the present

Invention compared to the previous state of the art is the provision of a multi-

Main grid photovoltaic module and its manufacturing process, which can achieve the following advantageous effects: 1. All positive electrodes are designed as main and secondary grids, and the

The main and secondary grids are made of transparent conductive oxide, while the negative electrodes are designed as counter electrodes to

semiconductor utilization. _ 2. The main grid uses multiple main grids to reduce the transmission distance from the secondary grids to the main grid, thus increasing the

to reduce secondary grid resistance.

drawings

In order to use the technical solutions in the embodiments or in the previous technical

In order to illustrate the state of the invention more clearly, a brief description of the accompanying drawings follows, which are necessary for describing the embodiments or the prior art. It is obvious that the accompanying

Drawings in the following description only examples of embodiments of the

invention and that other accompanying drawings differ from those shown on the

The field of expertise is usually well versed, without creative effort in

accordance with the accompanying drawings.

Fig. 1 shows an exploded view of the structure for a multi-principal lattice

Photovoltaic module of the present invention;

Fig. 2 shows a flow chart of a manufacturing process for a multi-principal lattice

Photovoltaic module of the present invention.

In the picture: 1 - upper frame, 2 - lower frame, 3 - photovoltaic film, 4 - BE2023/5248

Solar panel, 5 - battery module, 6 - base plate, 7 - main grid, 8 - secondary grid.

Specific implementation

The technical solutions in the embodiments of the present invention are described in

In the following, in conjunction with the accompanying drawings, the embodiments of the present invention are clearly and completely described, and it is obvious that the described embodiments represent only a part of the embodiments of the present invention, and not all of them from the inside.

Embodiments of the present invention, all other embodiments that can be achieved by a person skilled in the art without creative effort fall within the scope of the present invention.

As shown in Figure 1, embodiments of the present invention disclose a multi-

Main grid photovoltaic module comprising: a frame unit, a

photovoltaic panel,

The frame unit comprises an upper frame 1 and a lower frame 2, the

Photovoltaic panel comprises a base plate 6, a battery module 5, a solar panel 4, a

Photovoltaic film 3, the solar panel 4 comprises a stacked and fixed substrate, a

silicon wafer, a back electrode; a secondary grid 8 and a main grid 7 are embedded between the substrate and the silicon wafer; the main grid 7 is used to combine and transfer the current collected by each secondary grid 8.

The photovoltaic panels are mounted inside the frame unit, the upper frame 1 is firmly connected to the photovoltaic film 3 and the lower frame 2 is firmly connected to the base plate 6; the photovoltaic film 3, the solar panel 4, the battery module 5 and the

Base plate 6 are firmly connected one after the other; the battery module 5 is electrically connected to the

Solar panel 4 connected.

Furthermore, the main grid 7 is electrically connected to the secondary grid 8; the

Bottom plate 6 is made of a rigid material to securely support the overall structure and improve the overall robustness of the structure; the main grid 7 is electrically connected to the battery module 5; the material of the main grid 7 and the secondary grid 8 is made of transparent conductive oxide (TCO), e.g. or ZnO; the substrate is made of a flat glass plate; the back electrode is electrically connected to the positive terminal of the battery module 5 and the main grid 7 is electrically connected to the negative

Connection of the battery module 5.

Furthermore, the silicon wafer uses a p-i-n-type photovoltaic cell, the p-i-n-type

Photovoltaic cell consists of a p-type semiconductor film based on silicon hydride, an intrinsic i-type semiconductor film and an n-type semiconductor film which are stacked one after the other, the back electrode is in direct contact with the n-type semiconductor film of the

Silicon wafer electrically connected, the main gate 7 and the secondary gate 8 are each embedded in the p-type semiconductor foil.

Furthermore, the return electrode is a positive electrode.

Furthermore, the photovoltaic film 3 consists of black PE photovoltaic film.

Furthermore, the main grids 7 and the secondary grids 8 are screen printed BE2023/5248

Silver paste, electroplating or 3D printing.

Furthermore, the multiple rows of main grids 7 of adjacent solar panels 4 are connected or integrated accordingly. 5 Furthermore, each solar panel 4 is provided with 4 rows of main grids 7 and each

Series of main grids has an integer number of secondary grids 8, which is greater than 2; where the width of the main grids 7 is 1.2 mm to 1.6 mm and the width of each

secondary grid 8 is 0.4 mm to 0.6 mm.

Furthermore, each solar panel 4 is provided with 4 rows of main grids 7 which are electrically connected as negative poles; the silicon disk has a length of 100 mm - 150 mm and a width of 100 mm - 150 mm.

Furthermore, the length of the silicon wafer is preferably 125 mm and the width is preferably 125 mm, the length of the main grid 7 is preferably 125 mm; the

The width of the main grid 7 is preferably 1.4 mm and the width of each secondary grid 8 is preferably 0.5 mm.

According to the above method, as shown in Fig. 2, the present

The invention also relates to a manufacturing method for a multi-main grid photovoltaic module, the manufacturing steps of which include:

S1: Manufacturing a solar panel 4: Depositing silicon wafers, back electrodes on a substrate coated with a main grid 7 and a secondary grid 8;

S2: Manufacturing a photovoltaic panel based on the solar module 4;

S3: Installation of the photovoltaic panel on the inside of the frame unit and

Welding the frame unit to produce a photovoltaic module;

S4: Checking the prepared photovoltaic module.

Furthermore, the back electrode of the solar panel 4 is electrically connected to the positive electrode of the battery module 5 via the electrode foil, and the main grid 7 of the

Solar panel 4 is electrically connected via the electrode foil to the negative electrode of the

battery module 5.

Furthermore, S1 includes in particular:

S1.1 Coating the main grid 7 and the secondary grid 8, which is transparent and conductive, on the substrate;

S1.2: depositing a p-type semiconductor film based on silicon hydride, an intrinsic i-type semiconductor film, an n-type semiconductor film on the substrate coated with the main grid 7, the secondary grid 8, which are stacked one after the other; wherein the silicon wafer is made of a p-i-n type photovoltaic cell, wherein the p-i-n type photovoltaic cell of the p-type semiconductor film based on

Silicon hydride comprising i-type intrinsic semiconductor film, n-type semiconductor film and p-type semiconductor film;

S1.3: Depositing the back electrode on the n-type semiconductor film after deposition; BE2023/5248 wherein the back electrode comprises a silver film, a nickel film and an aluminum film sequentially and overlappingly.

Furthermore, the nickel foil consists of nickel or nickel alloys with a

Nickel content of more than 60%. In the same continuous magnetron sputtering system, silver, nickel and aluminum foil are deposited one after the other using the appropriate targets. The silver foil has a thickness of 20-25 nm, the

Nickel foil has a thickness of 20-30 nm and aluminum foil has a thickness of 100-150 nm.

Furthermore, the secondary grids 8 in S1.1 are electrically connected to the main grids 7 by an aluminium-containing silver paste, whereby the main grids 7 are provided with at least three

groups and the three groups of main grids 7 are electrically connected by an aluminium-containing silver paste.

Furthermore, S2 includes in particular:

S2.1: Attaching and bonding a photovoltaic film 3 to the substrate of the solar panel 4 by means of a thermally conductive EVA encapsulation;

S2.2: Attach and secure one side of the battery module 5 to the

side of the solar panel 4 provided with a back electrode, electrically connecting the solar panel 4 to the battery module 5 by means of an electrode foil;

S2.3: Manufacture the photovoltaic panel by attaching the other side of the

Battery module 5 with a base plate 6; wherein the photovoltaic panel has the photovoltaic film 3, the solar panel 4, the battery module 5 and the base plate 6 arranged one above the other.

Furthermore, the thermally conductive EVA encapsulant of S2.1 comprises an ethylene

Vinyl acetate copolymer and a thermally conductive powder of 10-20 wt.%, based on 100

% by weight of the ethylene-vinyl acetate copolymer.

Furthermore, S3 includes in particular:

S3.1: Attaching the photovoltaic panels to the lower frame 2;

S3.2: Fastening the upper frame 1 to the lower frame 2;

S3.3: Welding the upper frame 1 and the lower frame 2 to form an integral

Frame unit, the frame unit comprising the upper frame 1 and the lower frame 2.

Furthermore, S4 includes in particular: after the manufacture of the photovoltaic module, the

Testing the photovoltaic panel to determine whether the photovoltaic panel is capable of proper operation and whether the photovoltaic panel has proper

voltage and current are generated.

Furthermore, the testing of the photovoltaic module by S4 also includes the BE2023/5248

Resistance detection between the main grid 7 and secondary grid 8 and checking for hidden cracks, broken grids and breaks in the photovoltaic panel.

Each embodiment in this manual is described step by step, with each

Embodiment the focus is on the differences from the other

embodiments, and it is sufficient to refer to identical and similar parts of each

Embodiment. For the invention disclosed in the examples, the

Description is simpler because it corresponds to the methods disclosed in the examples, and the relevant parts are described in the methods section.

The above description of the disclosed embodiments enables the

A person skilled in the art will be able to make or use the present invention. A variety of

Modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention.

Accordingly, the invention is not limited to the embodiments shown herein, but is subject to the widest possible scope consistent with the principles and novel features disclosed herein.

Claims (10)

. BE2023/524 Claims 02915248 1. A multi-main grid photovoltaic module, characterized in that it comprises: a frame unit, a photovoltaic panel, the frame unit comprises an upper frame (1) and a lower frame (2), the photovoltaic panel comprises a bottom plate (6), a battery module (5), a solar panel (4) and a photovoltaic film (3), the solar panel comprises a substrate, a silicon wafer and a back electrode which are stacked one after another; the secondary grid (8), a main grid (7) embedded between the substrate and the silicon wafer; the main grid (7) is used to collect and transmit the current collected by each of the secondary grids (8); the photovoltaic panel is fixed within the frame unit, the upper frame (1) is fixedly connected to the photovoltaic film (3), the lower frame (2) is fixedly connected to the bottom plate (6); the photovoltaic film (3), the solar panel (4), the battery module (5) and the bottom plate (6) are fixedly connected one after another; the battery module (5) is electrically connected to the solar panel (4). 2. A multi-main grid photovoltaic module according to claim 1, characterized in that, The silicon wafer is a p-i-n photovoltaic cell, the p-i-n photovoltaic cell consisting of a p-type semiconductor film based on silicon hydride, an intrinsic i-type semiconductor film and an n-type semiconductor film which are stacked one after the other, the back electrode being in direct contact with and electrically connected to the n-type semiconductor film of the silicon wafer, the main grid (7) and the secondary grid (8) being embedded in the p-type semiconductor film, respectively. 3. A multi-main grid photovoltaic module according to claim 1, characterized in that the photovoltaic film (3) is made of black PE photovoltaic film. 4. A multi-main grid photovoltaic module according to claim 1, characterized in that the main grid (7) and the secondary grid (8) are formed by screen printing silver paste, electroplating or 3D printing. 5. A multi-main grid photovoltaic module according to claim 1, characterized in that each solar panel (4) is provided with 4 rows of main grids (7) and each row of main grids is provided with an integer number of secondary grids (8) greater than 2; wherein the width of the main grids (7) is 1.2 mm to 1.6 mm and the width of each of the secondary grids (8) is 0.4 mm to 0.6 mm. 6. Manufacturing method for a multi-main grid photovoltaic module, characterized in that the manufacturing steps comprise: S1: Manufacturing the solar panel (4): depositing silicon wafers, BE2023/5248 back electrodes on a substrate coated with main grids (7) and secondary grids (8). S2: manufacturing a photovoltaic panel based on the solar panel (4). S3: manufacturing a photovoltaic module by attaching the photovoltaic panels to the inside of a frame unit and welding the frame unit. S4: testing the finished photovoltaic module. 7. Manufacturing method for a multi-main grid photovoltaic module according to claim 6, characterized in that S1 in particular comprises: S1.1: Coating the main grid (7) and the secondary grid (8), which is transparent and conductive, on the substrate; S1.2: depositing a p-type semiconductor film based on silicon hydride, an intrinsic i-type semiconductor film, an n-type semiconductor film on the substrate coated with the main grid (7), the secondary grid (8) which are stacked one after the other; wherein the silicon wafer is made of a p-i-n type photovoltaic cell, wherein the p-i-n type photovoltaic cell comprises the p-type semiconductor film based on silicon hydride, the intrinsic i-type semiconductor film, the n-type semiconductor film and the p-type semiconductor film; S1.3: Depositing the back electrode on the n-type semiconductor film after the deposition; wherein the back electrode comprises a silver film, a nickel film and an aluminum film sequentially and overlappingly. 8. Manufacturing method for a multi-main grid photovoltaic module according to claim 6, characterized in that S2 in particular comprises: S2.1: Attaching and bonding a photovoltaic film (3) to the substrate of the solar panel (4) by means of a thermally conductive EVA encapsulation; S2.2: Attaching and fixing one side of the battery module (5) to the side of the solar panel (4) provided with the return electrode, electrically connecting the solar panel (4) to the battery module (5) by means of an electrode foil; S2.3: Manufacture of the photovoltaic panel by fixing the other side of the battery module (5) with a base plate (6); wherein the photovoltaic panel has the photovoltaic film (3), the solar panel (4), the battery module (5) and the base plate (6) arranged one above the other one after the other. 9. Manufacturing method for a multi-main grid photovoltaic module according to claim 6, characterized in that S3 in particular comprises: S3.1: Attaching the photovoltaic panels to the lower frame (2); S3.2: Fastening the upper frame (1) to the lower frame (2); S3.3: Welding the upper frame (1) and the lower frame (2) into an integral frame unit, the frame unit comprising the upper frame (1) and the lower frame (2). 10. Manufacturing process for a multi-main grid photovoltaic module according to BE2023/5248 Claim 6, characterized in that, S4 in particular includes: after the manufacture of the photovoltaic module, the Testing the photovoltaic panel to determine whether the photovoltaic panel is capable of proper operation and whether the photovoltaic panel is producing proper voltage and current.